Abstract: This device includes a dielectric stack including at least one electret layer (2E), and two electrodes (16, 20) on two opposite faces (18, 22) of the stack. The electret is mineral. The device notably applies to the field of telecommunications.

Abstract: When the initial displacement greatly varies among cells in an element, there is a need to reduce a bias voltage to be applied between electrodes. This decreases the sensitivity. An electromechanical transducer of the present invention includes an element having a plurality of cells. Each of the cells includes a first electrode and a second electrode that are provided with a cavity being disposed therebetween. A groove is provided at a position at a predetermined distance from the cavity of the cell on the outermost periphery of the element.

Abstract: A semiconductor pressure sensor comprises: a substrate having a through-hole; a polysilicon film provided on the substrate and having a diaphragm above the through-hole; an insulating film provided on the polysilicon film; first, second, third, and forth polysilicon gauge resistances provided on the insulating film and having a piezoresistor effect; and polysilicon wirings connecting the first, second, third, and forth polysilicon gauge resistances in a bridge shape, wherein each of the first and second polysilicon gauge resistances is disposed on a central portion of the diaphragm and has a plurality of resistors connected in parallel, a structure of the first polysilicon gauge resistance is same as a structure of the second polysilicon gauge resistance, and a direction of the first polysilicon gauge resistance is same as a direction of the second polysilicon gauge resistance.

Abstract: A micro-electromechanical system (MEMS) device for measuring accelerations, angular rates, or for actuation comprises at least two substrates and at least one movable structure arranged in a cavity between the substrates. An electrically conducting frame surrounding the movable structure is arranged at an interface of the two substrates. The frame is electrically separated from the movable structure and connected by at least first and second electrically conducting connections to the first and second substrates, respectively. The frame may have a width of not more than 150 preferably not more than 50 ?m. The first connection is at an interface between the frame and the first substrate. The second connection is a layer applied at an outer periphery of the frame and a peripheral face of the second substrate. The structure keeps electrical fields and electromagnetic disturbances away from the sensor and may also be used for shielding micro-electronic circuits.

Abstract: The sensor assembly comprises a substrate (1), such as a flexible printed circuit board, and a sensor chip (2) flip-chip mounted to the substrate (1), with a first side (3) of the sensor chip (2) facing the substrate (1). A sensing area (4) and contact pads (5) are integrated on the first side (3) of the sensor chip (2) and located in a chamber (17) between the substrate (1) and the sensor chip (2). Chamber (17) is bordered along at least two sides by a dam (16). Underfill (18) and/or solder flux is arranged between the sensor chip (2) and the substrate (1), and the dam (16) prevents the underfill from entering the chamber (17). An opening (19) extends from the chamber to the environment and is located between the substrate (1) and the sensor chip (2) or extends through the sensor chip (2).

Abstract: A method of fabricating a gallium nitride (GaN) thin layer structure includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and define at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

Abstract: A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.

Abstract: The present invention discloses a MEMS microphone device and its manufacturing method. The MEMS microphone device includes: a substrate including a first cavity; a MEMS device region above the substrate, wherein the MEMS device region includes a metal layer, a via layer, an insulating material region and a second cavity; a mask layer above the MEMS device region; a first lid having at least one opening communicating with the second cavity, the first lid being fixed above the mask layer; and a second lid fixed under the substrate.

Abstract: A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.

Abstract: A package structure having an MEMS element includes: a packaging substrate having first and second wiring layers on two surfaces thereof and a chip embedded therein; a first dielectric layer disposed on the packaging substrate and the chip; a third wiring layer disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer and the third wiring layer and having a recessed portion; a lid disposed in the recessed portion and on the top surface of the second dielectric layer around the periphery of the recessed portion, wherein the portion of the lid on the top surface of the second dielectric layer is formed into a lid frame on which an adhering material is disposed to allow a substrate having an MEMS element to be attached to the packaging substrate with the MEMS element corresponding in position to the recessed portion, thereby providing a package structure of reduced size and costs with better electrical properties.

Abstract: Embodiments of embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein.

Abstract: An MEMS chip is mounted face-down on a semiconductor wafer such that a movable section is opposed to the semiconductor wafer. A resin layer is formed on the semiconductor wafer around the MEMS chip to reduce a step between the MEMS chip and the semiconductor wafer. After the semiconductor substrate is removed, the land electrode is formed on the resin layer.

Abstract: A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

Abstract: An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

Abstract: A method for manufacturing a micromechanical sound transducer includes depositing successive layers of first and second membrane support material on a first main surface of a substrate arrangement with a first etching rate and a lower second etching rate, respectively. A layer of membrane material is then deposited. A cavity is created in the substrate arrangement from a side of the substrate arrangement opposite to the membrane support materials and the membrane material at least until the cavity extends to the layer of first membrane support material. The layers of first and second membrane support material are etched by applying an etching agent through the cavity in at least one first region located in an extension of the cavity also in a second region surrounding the first region. The etching creates a tapered surface on the layer of second membrane support material in the second region.

Abstract: The present invention discloses a MEMS sensing device which comprises a substrate, a MEMS device region, a film, an adhesive layer, a cover, at least one opening, and a plurality of leads. The substrate has a first surface and a second surface opposite the first surface. The MEMS device region is on the first surface, and includes a chamber. The film is overlaid on the MEMS device region to seal the chamber as a sealed space. The cover is mounted on the MEMS device region and adhered by the adhesive layer. The opening is on the cover or the adhesive layer, allowing the pressure of the air outside the device to pressure the film. The leads are electrically connected to the MEMS device region, and extend to the second surface.

Abstract: The present invention relates to integrating an inertial mechanical device on top of a CMOS substrate monolithically using IC-foundry compatible processes. The CMOS substrate is completed first using standard IC processes. A thick silicon layer is added on top of the CMOS. A subsequent patterning step defines a mechanical structure for inertial sensing. Finally, the mechanical device is encapsulated by a thick insulating layer at the wafer level. Comparing to the incumbent bulk or surface micromachined MEMS inertial sensors, the vertically monolithically integrated inertial sensors have smaller chip size, lower parasitics, higher sensitivity, lower power, and lower cost.

Abstract: A sensor device and a manufacturing method thereof are provided in which no resin seal is used when a sensor is packaged, a change in connection relation according to a change in specifications of the control IC and others is facilitated when a control IC is packaged together with the sensor and high reliability is kept. The sensor device of the present invention includes a substrate containing an organic material and being formed a wiring, a sensor arranged on the substrate and electrically connected to the wiring, and a package cap arranged on the substrate and containing an organic material and covering the sensor, and the inside of the package cap is hollow.

Abstract: A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area.

Abstract: In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.

Abstract: A micromechanical structure and a method of fabricating a micromechanical structure are provided. The micromechanical structure comprises a silicon (Si) based substrate; a micromechanical element formed directly on the substrate; and an undercut formed underneath a released portion of the micromechanical element; wherein the undercut is in the form of a recess formed in the Si based substrate.

Abstract: A semiconductor device may include a piezoresistive body of which a resistance value is changed by action of an external force. The piezoresistive body may include a surface layer of diamond. The surface layer may be hydrogen-terminated.

Abstract: According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

Abstract: An electrical system and method for making the same includes a main circuit board and a plurality of contact pads located on a surface of the main circuit board. The contact pads are electrically conductive. Additionally, an integrated circuit package having at least one electrical device is attached to the surface of the main circuit board. A ball grid array made from a plurality of solder balls is located on a bottom side of the integrated circuit package. The ball grid array has a plurality of solder balls being electrically conductive and in electrical communication with the at least one electrical device. The solder balls further include solder balls of different material properties.

Abstract: Vibration beams are provided on a substrate in parallel with the substrate and in parallel with each other, and provided in vacuum chambers formed by a shell and the substrate. Each of vibration beams has a sectional shape with a longer sectional thickness in a direction perpendicular to a surface of the substrate than a sectional thickness in a direction parallel to the surface of the substrate. A first electrode plate is provided in parallel with the surface of the substrate and connected to one end of each of the vibration beams. A second electrode plate is provided in parallel with the surface of the substrate and between the vibration beams. Third and fourth electrode plates are provided on opposite sides of the vibration beams. Asperities are provided in opposed side wall portion surfaces of the vibration beams and the second, third and fourth electrode plates.

Abstract: A vertical mount pre-molded type package for use with a MEMS sensor may be formed with a low moisture permeable molding material that surrounds a portion of the leadframes and forms a cavity in which one or multiple dies may be held. The package includes structures to reduce package vibration, reduce die stress, increase vertical mount stability, and improve solder joint reliability. The vertical mount package includes a first leadframe having first leads and molding material substantially surrounding at least a portion of the first leads. The molding material forms a cavity for holding the MEMS sensor and forms a package mounting plane for mounting the package on a base. The cavity has a die mounting plane that is substantially non-parallel to the package mounting plane. The first leads are configured to provide electrical contacts within the cavity and to provide electrical contacts to the base.

Abstract: Disclosed herein is a microelectromechanical device and a process for manufacturing same. One or more embodiments may include forming a semiconductor structural layer separated from a substrate by a dielectric layer, and opening a plurality of trenches through the structural layer exposing a portion of the dielectric layer. A sacrificial portion of the dielectric layer is selectively removed through the plurality of trenches in membrane regions so as to free a corresponding portion of the structural layer to form a membrane. To close the trenches, the wafer is brought to an annealing temperature for a time interval in such a way as to cause migration of the atoms of the membrane so as to reach a minimum energy configuration.

Abstract: The present invention discloses a Micro-Electro-Mechanical System (MEMS) acoustic pressure sensor device and a method for making same. The MEMS device includes: a substrate; a fixed electrode provided on the substrate; and a multilayer structure, which includes multiple metal layers and multiple metal plugs, wherein the multiple metal layers are connected by the multiple metal plugs. A cavity is formed between the multilayer structure and the fixed electrode. Each metal layer in the multilayer structure includes multiple metal sections. The multiple metal sections of one metal layer and those of at least another metal layer are staggered to form a substantially blanket surface as viewed from a moving direction of an acoustic wave.

Abstract: A wafer-level-based packaging concept for MEMS components having at least one diaphragm structure formed in the component front side is described, according to which an interposer is connected to the front side of the MEMS component, which has at least one passage aperture as an access opening to the diaphragm structure of the MEMS component and which is provided with electrical through contacts so that the MEMS component is electrically contactable via the interposer. The cross-sectional area of the at least one passage aperture in the interposer is to be designed as significantly smaller than the lateral extension of the diaphragm structure of the MEMS component. The at least one passage aperture opens into a cavity between the diaphragm structure and the interposer.

Abstract: A manufacturing method for an encapsulated micromechanical component has the following steps: creating an intermediate substrate having a plurality of perforations; laminating an encapsulation substrate onto a front side of the intermediate substrate, which closes the perforations on the front side; laminating an MEMS functional wafer onto a rear side of the intermediate substrate; the MEMS functional wafer being aligned with the intermediate substrate in such a way that the perforations form cavities over the corresponding functional areas of the MEMS functional wafer.

Abstract: In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole.

Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.

Abstract: According to one embodiment, a MEMS includes a first electrode, a first auxiliary structure and a second electrode. The first electrode is provided on a substrate. The first auxiliary structure is provided on the substrate and adjacent to the first electrode. The first auxiliary structure is in an electrically floating state.

Abstract: A method for fabricating a micro electromechanical device includes providing a first substrate including control circuitry. The first substrate has a top surface and a bottom surface. The method also includes forming an insulating layer on the top surface of the first substrate, removing a first portion of the insulating layer so as to form a plurality of standoff structures, and bonding a second substrate to the first substrate. The method further includes thinning the second substrate to a predetermined thickness and forming a plurality of trenches in the second substrate. Each of the plurality of trenches extends to the top surface of the first substrate. Moreover, the method includes filling at least a portion of each of the plurality of trenches with a conductive material, forming the micro electromechanical device in the second substrate, and bonding a third substrate to the second substrate.

Abstract: A MEMS sensing system includes a movable mass having at least one contact surface, a stopper system for stopping the movement of the mass, the stopper system having at least one contact surface that contacts a corresponding contact surface of the mass if a sufficient movement of the mass occurs in a direction, at least one stopper gap formed between the at least one contact surface of the stopper system and the corresponding contact surface of the mass, and a spring system in communication with the at least one stopper gap.

Abstract: A MEMS sensor includes a substrate and a MEMS structure coupled to the substrate. The MEMS structure has a mass movable with respect to the substrate. The MEMS sensor also includes a reference structure electrically coupled to the mass of the MEMS sensor. The reference structure is used to provide a reference to offset any environmental changes that may affect the MEMS sensor in order to increase the accuracy of its measurement.

Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.

Abstract: A MEMS device having a device cavity in a substrate has a cavity etch monitor proximate to the device cavity. An overlying layer including dielectric material is formed over the substrate. A monitor scale is formed in or on the overlying layer. Access holes are etched through the overlying layer and a cavity etch process forms the device cavity and a monitor cavity. The monitor scale is located over a lateral edge of the monitor cavity. The cavity etch monitor includes the monitor scale and monitor cavity, which allows visual measurement of a lateral width of the monitor cavity; the lateral dimensions of the monitor cavity being related to lateral dimensions of the device cavity.

Abstract: A method for producing a component, especially a micromechanical, micro-electro-mechanical or micro-opto-electro-mechanical component, as well as such a component which has an active structure that is embedded in a layer structure. Strip conductor bridges are formed by etching first and second depressions having a first and second, different etching depth into a covering layer of a first layer combination that additionally encompasses a substrate and an insulation layer. The deeper depression is used for insulating the strip conductor bridge while the shallower depression provides a moving space for the active structure with the moving space being bridged by the strip conductor bridge.

Abstract: A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.

Abstract: The sensor assembly comprises a substrate (1), such as a flexible printed circuit board, and a sensor chip (2) flip-chip mounted to the substrate (1), with a first side (3) of the sensor chip (2) facing the substrate (1). A sensing area (4) and contact pads (5) are integrated on the first side (3) of the sensor chip (2). Underfill (18) and/or solder flux is arranged between the sensor chip (2) and the substrate (1). The sensor chip (2) extends over an edge (12) of the substrate (1), with the edge (12) of the substrate (1) extending between the contact pads (5) and the sensing area (4) over the whole sensor chip (2). A dam (16) can be provided along the edge (12) of the substrate (1) for even better separation of the underfill (18) and the sensing area (4). This de sign allows for a simple alignment of the sensor chip on the substrate (1) and prevents underfill (18) from covering the sensing area (4).

Abstract: The invention relates to an electromechanical device comprising a package and at least one component surface-mounted in the package, characterized in that it also comprises at least one nanotube-based interface providing a mechanical link for vibratory and thermal filtering between said component and the package. Advantageously, the nanotube-based interface can also serve as an electrical and/or thermal interface with the electrical contacts with which the package is equipped.

Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.

Abstract: A field effect transistor comprises an electrostatically moveable gate electrode. The moveable gate is supported by at least two posts, and the source, drain, and channel of the transistor are centrally located under the moveable layer. At least one electrode is positioned on at least two sides of the source, drain, and channel.

Abstract: A micromechanical device assembly includes a micromechanical device enclosed within a processing region and a lubricant channel formed through an interior wall of the processing region and in fluid communication with the processing region. Lubricant is injected into the lubricant channel via capillary forces and held therein via surface tension of the lubricant against the internal surfaces of the lubrication channel. The lubricant channel containing the lubricant provides a ready supply of fresh lubricant to prevent stiction from occurring between interacting components of the micromechanical device disposed within the processing region.

Abstract: A pressure sensor 1 comprises a semiconductor substrate 10, insulating layers 21, 22, 23 formed on the semiconductor substrate 10, a semiconductor layer 30 formed on the semiconductor substrate 10 with the insulating layers 21, 23 intervening therebetween, and a cavity portion 13 provided between the semiconductor substrate 10 and the semiconductor layer 30. The portion of the semiconductor layer 30 which overlaps the cavity portion 13 as viewed in a lamination direction serves as a movable portion 31. The cavity portion 13 is surrounded by the insulating layers 22, 23. With this arrangement, the pressure sensor 1 can be manufactured easily with high precision.

Abstract: A piezoelectric device includes a piezoelectric thin film formed by separating and forming a piezoelectric single crystal substrate, an inorganic layer formed on a back surface of the piezoelectric thin film, an elastic body layer disposed on a surface opposite to the piezoelectric thin film of the inorganic layer, and a support pasted to a surface opposite to the inorganic layer of the elastic body layer. In a membrane structure portion, the inorganic layer and the elastic body layer are disposed on the piezoelectric thin film through a gap layer. The elastic body layer reduces a stress caused by pasting the piezoelectric thin film including the inorganic layer and the support and has a certain elastic modulus. The inorganic layer is formed with a material having an elastic modulus higher than that of the elastic body layer and suppresses damping caused by disposing the elastic body layer.

Abstract: A MEMS microphone has a cover, a base and a MEMS chip. The cover has a contact voice receiving unit which is disposed on the base, and a space is formed between the cover and the base. The MEMS chip is disposed in the space and electrically connected to the base and the contact voice receiving unit. The MEMS microphone enhances the quality of voice transmission by reducing interferences from ambient noises.

Abstract: Disclosed is a method of manufacturing an electromechanical transducer layer on a surface of a substrate, including discharging a solution including a source material to form the electromechanical transducer layer from a nozzle of a nozzle plate to coat the solution on the surface of the substrate while applying voltage between the nozzle plate and the substrate to charge the nozzle plate at a first polarity and the substrate at a second polarity opposite to the first polarity such that a split droplet split from a main droplet which is coated on the surface of the substrate becomes charged at the second polarity and is attracted and collected by the nozzle plate; and applying a heat treatment to the substrate on which the solution is coated to crystallize the solution to form the electromechanical transducer layer.