Abstract: A germanium semiconductor radiation detector contact made of yttrium metal. A thin (˜1000 ?) deposited layer of yttrium metal forms a thin hole-barrier and/or electron-barrier contact on both p- and n-type germanium semiconductor radiation detectors. Yttrium contacts provide a sufficiently high hole barrier to prevent measurable contact leakage current below ˜120 K. The yttrium contacts can be conveniently segmented into multiple electrically independent electrodes having inter-electrode resistances greater than 10 G?. Germanium semiconductor radiation detector diodes fabricated with yttrium contacts provide good gamma-ray spectroscopy data.

Abstract: A radiation receiver has a semiconductor body including a first active region and a second active region, which are provided in each case for detecting radiation. The first active region and the second active region are spaced vertically from one another. A tunnel region is arranged between the first active region and the second active region. The tunnel region is connected electrically conductively with a land, which is provided between the first active region and the second active region for external electrical contacting of the semiconductor body. A method of producing a radiation receiver is additionally indicated.

Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

Abstract: Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials.

Abstract: A vacuum recycling apparatus for refining solar grade polysilicon is provided which contains a vacuum degassing (VD) device and a vacuum recycling (RH) device. By storing liquid silicon in a bucket in the VD device, controlling the pressure inside the VD and RH devices, and introducing inert gas into the apparatus, the liquid silicon is stirred for the removal of impurities. With the present invention, solar grade polysilicon can be directly produced with a specified purity, significantly reducing the production time and cost.

Abstract: Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Abstract: Provided is a Si—Ge laminated thin film including at least one Si layer and at least one Ge layer, which are alternately laminated on a substrate (1). A Si layer (31) and a Ge layer (22) each have a thickness in a range of 5 to 500 nm. The Si layer (31) is amorphous and only the Ge layer (22) is crystallized. An average crystallite size of Ge in the Ge layer (22) is 20 nm or less.

Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

Abstract: Methods and apparatuses to produce graphene and nanoparticle catalysts supported on graphene without the use of reducing agents, and with the concomitant production of heat, are provided. The methods and apparatuses employ radiant energy to reduce (deoxygenate) graphite oxide (GO) to graphene, or to reduce a mixture of GO plus one or more metals to to produce nanoparticle catalysts supported on graphene. Methods and systems to generate and utilize heat that is produced by irradiating GO, graphene and their metal and semiconductor nanocomposites with visible, infrared and/or ultraviolet radiation, e.g. using sunlight, lasers, etc. are also provided.

Abstract: A method of producing a photovoltaic device includes providing a stretchable substrate for the photovoltaic device; and stretching the substrate to produce a stretched substrate. The method further includes depositing a structure comprising hydrogenated amorphous silicon onto the stretched substrate; and subjecting the deposited hydrogenated amorphous silicon structure and the stretched substrate to a compressive force to form a compressively strained photovoltaic device.

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.

Abstract: A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer to semiconductor material crystal lattice which terminates at an interface; the discontinuity of the semiconductor crystal lattice at the interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer, the second polar semiconductor being substantially transparent to light in the predetermined wavelength range, the second polar semiconductor layer having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the fir

Abstract: A conductive polymer and a semiconducting carbon nanotube material are combined to form a highly conductive composite. The composite can be used for EMI shielding, optical sensing, optical switching, and other uses.

Abstract: The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34).

Abstract: A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.

Abstract: A reset transistor includes a floating diffusion region for detecting a charge, a junction region for draining the charge, a gate for controlling a transfer of the charge from the floating diffusion region to the junction region upon receipt of a reset signal, and a potential well incorporated underneath the gate.

Abstract: Materials, devices, and methods for enhancing performance of electronic devices such as solar cells, thermoelectric conversion devices and other electronic devices are disclosed and described. In one aspect, a diamond-like carbon electronic device may include a conductive diamond-like carbon anode, an amorphous charge carrier separation layer adjacent the diamond-like carbon anode, and a cathode adjacent the charge carrier separation layer opposite the diamond-like carbon anode. Additionally, in another aspect the conductive diamond-like carbon material may have an sp3 bonded carbon content from about 30 atom % to about 90 atom %, a hydrogen content from 0 atom % to about 30 atom %, and an sp2 bonded carbon content from about 10 atom % to about 70 atom %. In yet another aspect, the sp2 bonded carbon content may be sufficient to provide the conductive diamond-like carbon material with a visible light transmissivity of greater than about 0.70.

Abstract: A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.

Abstract: Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same.

Abstract: A plasma spray gun configured to spray semiconductor grade silicon to form semiconductor structures including p-n junctions includes silicon parts such as the cathode or anode or other parts facing the plasma or carrying the silicon powder having at least surface portions formed of high purity silicon. The semiconductor dopant may be included in the sprayed silicon.

Abstract: The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength. A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.

Abstract: A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickwise direction of the I-type layer.