Characterized By Doping Material (epo) Patents (Class 257/E31.025)
  • Control method for device using doped carbon-nanostructure and device comprising doped carbon-nanostructure
    Patent number: 8729597
    Abstract: Provided is a method for controlling a device using a doped carbon-nanostructure, and a device including the doped carbon-nanostructure, in which the method for controlling the device selectively controls the mobility of electrons or holes using N-type or P-type doped carbon-nanostructure; the N-type or P-type impurities-doped carbon-nanostructure can selectively control the transport of electrons or holes according to a doped material; and also since the doped carbon-nanostructure limits the transport of charge that is the opposite charge to the transport facilitating charge, it can improve the efficiency of device by adding to a functional layer of device or using as a separate layer in the electrons or holes-only transporting device.
    Type: Grant
    Filed: November 16, 2011
    Date of Patent: May 20, 2014
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Sang Ouk Kim, Ji Sun Park, Ju Min Lee, Myoung Hoon Song
  • METHOD FOR FABRICATING A SILICON SOLAR CELL STRUCTURE HAVING A GALLIUM DOPED P-SILICON SUBSTRATE
    Publication number: 20080241988
    Abstract: Devices, solar cell structures, and methods of fabrication thereof, are disclosed.
    Type: Application
    Filed: June 12, 2008
    Publication date: October 2, 2008
    Applicant: Georgia Tech Research Corporation
    Inventors: Ajeet Rohatgi, Abasifreke Ebong, Vijay Yelundur