Including Microcrystalline Silicon ( C-si) (epo) Patents (Class 257/E31.045)
-
Patent number: 9018740Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.Type: GrantFiled: November 30, 2012Date of Patent: April 28, 2015Assignee: Centre National de la Recherche Scientifique (C.N.R.S)Inventors: Anne Charrier, Hervé Dallaporta, Tuyen Nguyen Duc
-
Publication number: 20140134787Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.Type: ApplicationFiled: November 5, 2012Publication date: May 15, 2014Applicant: SUNPOWER CORPORATIONInventors: Gabriel Harley, David D. Smith, Peter John Cousins
-
Publication number: 20140007933Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.Type: ApplicationFiled: August 10, 2012Publication date: January 9, 2014Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALSInventors: Seoung Yoon RYU, Dong Ho KIM, Kee Seok NAM, Yong Soo JEONG, Jung Dae KWON, Sung Hun LEE, Jung Heum YUN, Gun Hwan LEE, Hyung Hwan JUNG, Sung Gyu PARK, Chang Su KIM, Jae Wook KANG, Keong Su LIM, Sang II PARK
-
Patent number: 8410354Abstract: Higher conversion efficiency and productivity of photoelectric conversion devices. A semiconductor layer including a first and second crystal regions grown in the layer-deposition direction is provided between an impurity semiconductor layer containing an impurity element imparting one conductivity type and an impurity semiconductor layer containing an impurity element imparting a conductivity type opposite to the one conductivity type. The first crystal region is grown from the interface between one of the impurity semiconductor layers and the semiconductor layer. The second crystal region is grown toward the interface between the semiconductor layer and the other of the impurity semiconductor layers from a position which is away from the interface between the one of the impurity semiconductor layers and the semiconductor layer. The semiconductor layer including the first and second crystal regions which exist in an amorphous structure forms the main part of a region for photoelectric conversion.Type: GrantFiled: May 4, 2009Date of Patent: April 2, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
-
Publication number: 20130065357Abstract: The formation of solar cell contacts using a laser is described. A method of fabricating a back-contact solar cell includes forming a poly-crystalline material layer above a single-crystalline substrate. The method also includes forming a dielectric material stack above the poly-crystalline material layer. The method also includes forming, by laser ablation, a plurality of contacts holes in the dielectric material stack, each of the contact holes exposing a portion of the poly-crystalline material layer; and forming conductive contacts in the plurality of contact holes.Type: ApplicationFiled: November 5, 2012Publication date: March 14, 2013Applicant: SUNPOWER CORPORATIONInventor: SUNPOWER CORPORATION
-
Publication number: 20120329204Abstract: A wafer for backside illumination type solid imaging device has a plurality of pixels inclusive of a photoelectric conversion device and a charge transfer transistor at its front surface side and a light receiving surface at its back surface side, wherein said wafer is a SOI wafer obtained by forming a given active layer on a support substrate made of C-containing p-type semiconductor material through an insulating layer.Type: ApplicationFiled: August 13, 2012Publication date: December 27, 2012Applicant: Sumco CorporationInventors: Kazunari Kurita, Shuichi Omote
-
Publication number: 20120291861Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.Type: ApplicationFiled: January 26, 2011Publication date: November 22, 2012Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Pierre Mur, Hubert Moriceau, Pierre-Jean Ribeyron
-
Publication number: 20120276685Abstract: A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Inventor: David D. SMITH
-
Patent number: 8258025Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.Type: GrantFiled: August 2, 2010Date of Patent: September 4, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Yukie Suzuki, Yasuyuki Arai, Takayuki Inoue, Erumu Kikuchi
-
Patent number: 8198629Abstract: To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.Type: GrantFiled: February 9, 2011Date of Patent: June 12, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Toriumi, Tomokazu Yokoi, Makoto Furuno
-
Publication number: 20120122269Abstract: A method of manufacturing a photovoltaic element (710) capable of inhibiting the thicknesses and the qualities of formed films from being nonuniform includes steps of forming a substrate-side electrode (712), forming a photoelectric conversion layer (713, 714) with a plasma processing apparatus (1) including a first electrode (3) and a second electrode (4) provided on a portion opposed to the first electrode with a plurality of gas supply ports (4a) formed along concentric circles so that the quantities of gas supplied through the gas supply ports are different from each other on an inner peripheral side and an outer peripheral side, and forming a rear electrode (715).Type: ApplicationFiled: March 18, 2010Publication date: May 17, 2012Applicant: Sanyo Electric Co., Ltd.Inventor: Akihiro Kuroda
-
Publication number: 20120048358Abstract: Provided are a solar cell and a method for manufacturing the same. A solar cell according to an exemplary embodiment of the present invention includes: a substrate; a first electrode disposed on the substrate and including a first groove; a first semiconductor layer disposed on the first electrode; a second semiconductor layer disposed on the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer have a second groove extending therethrough, the second electrode extends into the second groove, and a third groove is formed in the second electrode and positioned within the second groove.Type: ApplicationFiled: May 17, 2011Publication date: March 1, 2012Inventors: Dong-Jin KIM, Bo-Hwan PARK, Czang-Ho LEE, Joon-Young SEO
-
Publication number: 20110237023Abstract: A method of fabricating a solar cell includes: forming a first electrode on a substrate; forming a first impurity-doped semiconductor layer on the first electrode; forming a first intrinsic semiconductor layer of amorphous silicon on the first impurity-doped semiconductor layer; forming a second impurity-doped semiconductor layer over the first impurity-doped semiconductor layer, forming a second electrode over the second impurity-doped semiconductor layer; and irradiating a first microwave to form a second intrinsic semiconductor layer of microcrystalline silicon by crystallizing the first intrinsic semiconductor layer.Type: ApplicationFiled: August 25, 2008Publication date: September 29, 2011Applicant: JUSUNG ENGINEERING CO., LTD.Inventor: Gun-Mook Lim
-
Publication number: 20110174371Abstract: A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface.Type: ApplicationFiled: August 31, 2009Publication date: July 21, 2011Applicant: UNIVERSITÉ DE NEUCHÂTELInventors: Sara Olibet, Christian Monachon, Jérôme Damon-Lacoste, Christophe Ballif
-
Publication number: 20110168259Abstract: A thin film solar cell is employed having a power generation layer formed with a microcrystalline silicon film including, in its plane, a first region and a second region in which a percentage of crystallization is lower than the first region and a carrier lifetime is higher than the first region.Type: ApplicationFiled: February 25, 2010Publication date: July 14, 2011Applicant: SANYO ELECTRIC CO., LTD.Inventors: Kazuya Murata, Hirotaka Katayama, Mitsuhiro Matsumoto, Yoichiro Aya
-
Patent number: 7960256Abstract: In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.Type: GrantFiled: May 12, 2010Date of Patent: June 14, 2011Assignee: Applied Materials, Inc.Inventors: Zhiyuan Ye, Yihwan Kim, Xiaowei Li, Ali Zojaji, Nicholas C. Dalida, Jinsong Tang, Xiao Chen, Arkadii V. Samoilov
-
Patent number: 7919398Abstract: Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.Type: GrantFiled: June 26, 2009Date of Patent: April 5, 2011Assignee: Applied Materials, Inc.Inventors: Yong Kee Chae, Soo Young Choi, Shuran Sheng
-
Patent number: 7897966Abstract: For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a ?c-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).Type: GrantFiled: February 18, 2009Date of Patent: March 1, 2011Assignee: Oerlikon Solar AG, TrubbachInventors: Hai Tran Quoc, Jerome Villette
-
Patent number: 7888167Abstract: To provide a photoelectric conversion device with improved photoelectric conversion characteristics and cost competitiveness. A photoelectric conversion device including a semiconductor junction has a semiconductor layer in which a needle-like crystal is made to grow over an impurity semiconductor layer. The impurity semiconductor layer is formed of a microcrystalline semiconductor and includes an impurity imparting one conductivity type. An amorphous semiconductor layer is deposited on a microcrystalline semiconductor layer by setting the flow rate of a dilution gas (typically silane) to 1 time to 6 times the flow rate of a semiconductor source gas (typically hydrogen) at the time of deposition. Thus, a crystal with a three-dimensional shape tapered in a direction of the deposition of a film, i.e., in a direction from the microcrystalline semiconductor layer to the amorphous semiconductor layer is made to grow.Type: GrantFiled: April 13, 2009Date of Patent: February 15, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Toriumi, Tomokazu Yokoi, Makoto Furuno
-
Publication number: 20100212721Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the thin film type solar cell is comprised of a substrate with lower and upper surfaces; a first solar cell on the upper surface of the substrate; and a second solar cell on the lower surface of the substrate, wherein a wavelength range of light absorbed into the first solar cell is different from a wave-length range of light absorbed into the second solar cell. In this case, there is no requirement for the tunneling between a first semiconductor layer of the first solar cell and a second semiconductor layer of the second solar cell, whereby the current matching is unnecessary.Type: ApplicationFiled: August 13, 2008Publication date: August 26, 2010Applicant: JUSUNG ENGINEERING CO., LTD.Inventor: Jin Hong
-
Patent number: 7741144Abstract: Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.Type: GrantFiled: October 31, 2008Date of Patent: June 22, 2010Assignee: Applied Materials, Inc.Inventors: Soo Young Choi, Yong-Kee Chae, Shuran Sheng, Liwei Li
-
Publication number: 20090277504Abstract: Higher conversion efficiency and productivity of photoelectric conversion devices. A semiconductor layer including a first and second crystal regions grown in the layer-deposition direction is provided between an impurity semiconductor layer containing an impurity element imparting one conductivity type and an impurity semiconductor layer containing an impurity element imparting a conductivity type opposite to the one conductivity type. The first crystal region is grown from the interface between one of the impurity semiconductor layers and the semiconductor layer. The second crystal region is grown toward the interface between the semiconductor layer and the other of the impurity semiconductor layers from a position which is away from the interface between the one of the impurity semiconductor layers and the semiconductor layer. The semiconductor layer including the first and second crystal regions which exist in an amorphous structure forms the main part of a region for photoelectric conversion.Type: ApplicationFiled: May 4, 2009Publication date: November 12, 2009Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventor: Shunpei Yamazaki
-
Publication number: 20090205712Abstract: A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.Type: ApplicationFiled: February 20, 2008Publication date: August 20, 2009Inventor: Peter John Cousins
-
Publication number: 20090181492Abstract: An approach for nano-cleaving a thin-film of silicon for solar cell fabrication is described. In one embodiment, there is a method of forming a substrate for use as a solar cell substrate. In this embodiment, a substrate of silicon is provided and implanted with an ion flux. A non-silicon substrate is attached to the thin-film of silicon to form a solar cell substrate.Type: ApplicationFiled: January 11, 2008Publication date: July 16, 2009Inventors: Peter Nunan, Steven R. Walther, Yuri Erokhin
-
Publication number: 20090162970Abstract: An approach for material modification in solar cell fabrication with ion doping is described. In one embodiment, there is a method of forming a thin-film solar cell. In this embodiment, a substrate is provided and a thin-film layer is deposited on the substrate. The thin-film solar cell layer is exposed to an ion flux to passivate a defect.Type: ApplicationFiled: December 20, 2007Publication date: June 25, 2009Inventor: Michael X. Yang
-
Publication number: 20090151788Abstract: A P-type doped layer of a photoelectric conversion device is provided. The P-type doped layer is a double layer structure including a seeding layer and a wide band gap layer disposed thereon. The P-type doped layer with the double layer structure has both high conductivity and high photoelectric performance.Type: ApplicationFiled: February 5, 2008Publication date: June 18, 2009Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventor: Chih-Jeng Huang
-
Publication number: 20090117685Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.Type: ApplicationFiled: October 8, 2008Publication date: May 7, 2009Applicant: NATIONAL SCIENCE AND TECHNOLOGY DEVELOPMENT AGENCYInventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
-
Publication number: 20090104732Abstract: The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon.Type: ApplicationFiled: October 17, 2007Publication date: April 23, 2009Inventor: JOHN M. WHITE
-
Publication number: 20090104733Abstract: Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.Type: ApplicationFiled: October 22, 2007Publication date: April 23, 2009Inventors: YONG KEE CHAE, SOO YOUNG CHOI, SHURAN SHENG
-
Publication number: 20090101201Abstract: A thin film multi-junction photovoltaic structure is presented as well as methods and apparatus for forming the same. The photovoltaic structure comprises first and second NIP junctions formed over a translucent substrate.Type: ApplicationFiled: October 22, 2007Publication date: April 23, 2009Inventors: John M. White, Soo Young Choi
-
Publication number: 20090029503Abstract: To form a microcrystalline semiconductor with high quality which can be directly formed at equal to or less than 500° C. over a large substrate with high productivity without decreasing a deposition rate. In addition, to provide a photoelectric conversion device which employs the microcrystalline semiconductor as a photoelectric conversion layer. A reactive gas containing helium is supplied to a treatment chamber which is surrounded by a plurality of juxtaposed waveguides and a wall, the pressure in the treatment chamber is maintained at an atmospheric pressure or a subatmospheric pressure, microwave is supplied to a space sandwiched between the juxtaposed waveguides to generate plasma, and a photoelectric conversion layer of a microcrystalline semiconductor is deposited over a substrate which is placed in the treatment chamber.Type: ApplicationFiled: July 18, 2008Publication date: January 29, 2009Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yasuyuki Arai, Shunpei Yamazaki
-
Publication number: 20080268566Abstract: The invention relates to a method for re-crystallization of layer structures by means of zone melting, in which, as a result of convenient arrangement of a plurality of heat sources, a significant acceleration of the zone melting method can be achieved. The method is based on the fact that a continuous recrystallisation of the layer is ensured as a result of overlaps being produced. According to the invention, a device is likewise provided with which the method according to the invention can be achieved. The method according to the invention is used in particular in the production of crystalline silicon thin layer solar cells or for example in SOI technology. However the application likewise relates also in general to the processing of metals, plastic materials or adhesives and here in particular to the production of thin layers.Type: ApplicationFiled: September 4, 2006Publication date: October 30, 2008Applicant: Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.Inventors: Stefan Reber, Achim Eyer, Fridolin Haas
-
Publication number: 20080217623Abstract: An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vb is applied when detecting the photocurrent, the reverse bias voltage Vb satisfying a following relation.Type: ApplicationFiled: September 5, 2007Publication date: September 11, 2008Applicant: Kabushiki Kaisha ToshibaInventors: Yujiro Hara, Akira Kinno, Tsuyoshi Hioki, Isao Amemiya, Shuichi Uchikoga
-
Publication number: 20080173347Abstract: One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.Type: ApplicationFiled: January 23, 2007Publication date: July 24, 2008Applicant: General Electric CompanyInventors: Bastiaan Arie Korevaar, James Neil Johnson