Having Light-induced Characteristic Variation (e.g., Staebler-wronski Effect) (epo) Patents (Class 257/E31.05)
  • Publication number: 20110156097
    Abstract: A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.
    Type: Application
    Filed: February 23, 2011
    Publication date: June 30, 2011
    Inventor: Shimon Maimon
  • Publication number: 20090166791
    Abstract: Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, an interlayer insulating layer including a metal line may be formed on and/or over a semiconductor substrate. A lower electrode layer connected with the metal line may be formed on and/or over the interlayer insulating layer. A photoresist pattern may be formed on and/or over the lower electrode layer and may form lower electrodes separated from each other. The photoresist pattern may be removed. A polymer with Cl group that may be generated when removing the photoresist pattern may be removed. According to embodiments, by removing the polymer, photons that may be generated in a photo diode may be more easily gathered, which may enhance an image quality of an image sensor.
    Type: Application
    Filed: December 26, 2008
    Publication date: July 2, 2009
    Inventor: Chung-Kyung Jung
  • Patent number: 6743988
    Abstract: An optically controlled switch includes first and second electrodes, a channel extending between the electrodes, and a light source positioned to illuminate the channel. The light source produces a wavelength capable of changing the material's conductivity. The channel includes a photosensitive organic material and is configured to operate as a light controlled switch.
    Type: Grant
    Filed: May 23, 2001
    Date of Patent: June 1, 2004
    Assignee: Lucent Technologies Inc.
    Inventors: Zhenan Bao, David John Bishop, Robert Albert Boie, Dustin W. Carr, Edwin Arthur Chandross, Peter Kian-Hoon Ho