Abstract: A photovoltaic converter device includes a photovoltaic conversion layer containing a plurality of nanoparticles in a first material in a dispersed state, wherein the nanoparticles include a second material in particles and a third material that coats the second material, the third material having a band gap E3 that is greater than a band gap E1 of the first material, and greater than a band gap E2 of the second material.

Abstract: In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

Abstract: A photovoltaic device and method include a crystalline substrate and an emitter contact portion formed in contact with the substrate. A back-surface-field junction includes a homogeneous junction layer formed in contact with the crystalline substrate and having a same conductivity type and a higher active doping density than that of the substrate. The homogeneous junction layer includes a thickness less than a diffusion length of minority carriers in the homogeneous junction layer. A passivation layer is formed in contact with the homogeneous junction layer opposite the substrate, which is either undoped or has the same conductivity type as that of the substrate.

Abstract: Disclosed are a thin film solar cell and a method of manufacturing the thin film solar cell. The thin film solar cell according to an exemplary embodiment of the present invention thin film solar cell includes a substrate: a front electrode layer formed on the substrate; an oxide layer formed on the front electrode layer: a light absorbing layer (intrinsic layer) formed on the oxide layer; and a back electrode layer formed on the light absorbing layer, wherein the oxide layer is formed of a material selected from MoO2, WO2, V2O5, NiO and CrO3.

Abstract: A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.

Abstract: A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.

Abstract: A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

Abstract: A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material.

Abstract: A method for producing a backside contact of a single p-n junction photovoltaic solar cell is provided. The method includes the steps of: providing a p-type substrate having a back surface; providing a plurality of p+ diffusion regions at the back surface of the substrate; providing a plurality of n+ diffusion regions at the back surface of the substrate in an alternate pattern with the p+ diffusion regions; providing an oxide layer over the p+ and n+ regions; providing an insulating layer over the back surface of the substrate; providing at least one first metal contact at the back surface for the p+ diffusion regions; and providing at least one second metal contact at the back surface for the n+ diffusion regions.

Abstract: One embodiment of the present invention provides a back junction solar cell. The solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated below the base layer facing away from incident light, an emitter layer situated below the QTB layer, a front surface field (FSF) layer situated above the base layer, a front-side electrode situated above the FSF layer, and a back-side electrode situated below the emitter layer.

Abstract: A thin-film photoelectric conversion device includes a crystalline germanium photoelectric conversion layer having improved open circuit voltage, fill factor, and photoelectric conversion efficiency for light having a longer wavelength. The photoelectric conversion device comprises a first electrode layer, one or more photoelectric conversion units, and a second electrode layer sequentially stacked on a substrate, wherein each of the photoelectric conversion units comprises a photoelectric conversion layer arranged between a p-type semiconductor layer and an n-type semiconductor layer. At least one of the photoelectric conversion units includes a crystalline germanium photoelectric conversion layer comprising a crystalline germanium semiconductor that is substantially intrinsic or weak n-type and is essentially free of silicon.

Abstract: A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

Abstract: A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index.

Abstract: The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.

Abstract: A photovoltaic structure having a semiconductor substrate, and metal particles bonded to the semiconductor substrate. The photovoltaic structure is sufficiently thin to be translucent or semitransparent. The metal particles are produced when a layer of metal is deposited onto the semiconductor substrate and heated. The photovoltaic structure is capable of causing generation of an electrical current upon exposure to electromagnetic radiation within one or more of the infrared spectrum, the visible light spectrum, or the ultraviolet spectrum.

Abstract: A thin silicon solar cell is described. An example solar cell may be fabricated from a crystalline silicon wafer having a thickness of approximately 50 micrometers to 500 micrometers. The solar cell comprises a first region having a p-n homojunction, a second region that creates heterojunction surface passivation, and a third region that creates heterojunction surface passivation. Amorphous silicon layers are deposited on both sides of the silicon wafer. A final layer of transparent conductive oxide is formed on both sides Metal contacts are applied to the transparent conductive oxide.

Abstract: A solar cell includes a semiconductor base, a first doped semiconductor layer, an insulating layer, a second doped semiconductor layer and a first electrode layer. The semiconductor base has a first doped type. The first doped semiconductor layer, disposed on the semiconductor base, has a doped contact region. The insulating layer is disposed on the first doped semiconductor layer, exposing the doped contact region. The second doped semiconductor layer is disposed on the insulating layer and the doped contact region. The first doped semiconductor layer, the doped contact region and the second doped semiconductor layer have a second doped type, and a dopant concentration of the second doped semiconductor layer is between that of the first doped semiconductor layer and that of the doped contact region. The first electrode layer is disposed corresponding to the doped contact region.

Abstract: A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and heating the donor body to an implant temperature during implanting. The donor body is separably contacted with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body by applying a thermal profile to the donor body. Implantation and exfoliation conditions may be adjusted in order to maximize the defect-free area of the lamina.

Abstract: A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained.

Abstract: A method of manufacturing a photovoltaic element (710) capable of inhibiting the thicknesses and the qualities of formed films from being nonuniform includes steps of forming a substrate-side electrode (712), forming a photoelectric conversion layer (713, 714) with a plasma processing apparatus (1) including a first electrode (3) and a second electrode (4) provided on a portion opposed to the first electrode with a plurality of gas supply ports (4a) formed along concentric circles so that the quantities of gas supplied through the gas supply ports are different from each other on an inner peripheral side and an outer peripheral side, and forming a rear electrode (715).

Abstract: The apparatus for thin film deposition for solar cells includes multiple unit chambers divided by a substrate as a boundary, a deposition gas injecting unit injecting deposition gases independently to each of the multiple unit chambers, and a decomposition unit in each of the multiple unit chambers to decompose the deposition gases, wherein both surfaces of the substrate each are exposed to the multiple unit chambers. The apparatus and the method for producing solar cells allow deposition on both surfaces of a substrate while the substrate is fixed without any rotation. Therefore, the number of processing units required for carrying out deposition is decreased, thereby providing high cost efficiency. Further, it results in a decrease in time during which the substrate is exposed to the exterior, thereby minimizing contamination of the surfaces of the substrate. As a result, it is possible to provide solar cells having excellent reliability.

Abstract: The instant disclosure relates to an electronic image detection device comprising: a plurality of metal electrodes on a first face of an insulating layer; and amorphous silicon regions extending over the insulating layer between the metal electrodes.

Abstract: A photoelectric conversion device including a single crystal silicon substrate; a first amorphous silicon layer in contact with a surface (a light-receiving surface) of the single crystal silicon substrate; a first polarity (p-type) impurity diffusion layer in contact with the first amorphous silicon layer; a second amorphous silicon layer in contact with a back surface of the single crystal silicon substrate; and a second polarity (n-type) impurity diffusion layer in contact with the second amorphous silicon layer, in which the first and second polarity impurity diffusion layers are microcrystalline silicon layers formed under a deposition condition where a pressure in a reaction chamber is adjusted to be greater than or equal to 450 Pa and less than or equal to 10000 Pa is provided.

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract: A photovoltaic element comprising a transparent conductive film capable of improving weather resistance is obtained. This photovoltaic element includes a photoelectric conversion layer, and a transparent conductive film formed on a surface of the photoelectric conversion layer and including an indium oxide layer having (222) orientation and two X-ray diffraction peaks, in which the two X-ray diffraction peaks of the indium oxide layer is constituted by a first peak on a low angle side and a second peak on a high angle side having a peak intensity level lower than the first peak.

Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure, a transparent-conductive-oxide (TCO) layer situated above the photovoltaic structure, and a front-side metal grid situated above the TCO layer. The TCO layer is in contact with the front surface of the photovoltaic structure. The metal grid includes at least one of: Cu and Ni.

Abstract: A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.

Abstract: A nanocrystalline superlattice solar cell utilizing a superlattice constructed from alternating amorphous and nanocrystalline layers is provided. The amorphous layers of the superlattice include Germanium. In one embodiment the Germanium content is homogeneous across the amorphous layer. Alternatively, the Germanium content is graded across the amorphous layer from a lower content to a greater content as the amorphous layer is grown. The grading of Germanium content can vary from 0% or greater at a boundary with the preceding layer to 100% or less at a boundary with a subsequent layer. The grading may be continuous or may occur in discreet step increases in Germanium content.

Abstract: The present invention provides novel strategies for mitigating the Staebler-Wronski Effect (SWE), that is, the light induced degradation in performance of photoconductivity in amorphous silicon. Materials according to the present invention include alloys or composites of amorphous silicon which affect the elasticity of the materials, amorphous silicon that has been grown on a flexed substrate, compression sandwiched comprising amorphous silicon, and amorphous silicon containing nanoscale features that allow stress to be relieved. The composites are formed with nanoparticles such as nanocrystals and nanotubes. Preferred are boron nitride nanotubes (BNNT) including those that have been surface modified.

Abstract: In accordance with one or more embodiments, a semiconductor structure includes a semiconductor substrate, a first semiconductor material over the semiconductor substrate, and a second semiconductor material over a portion the first semiconductor material, wherein the second semiconductor material comprises silicon-germanium-carbon (SiGeC) and wherein the first semiconductor material is a silicon epitaxial layer. The semiconductor structure further includes an active device, wherein a portion of the active device is formed in the second semiconductor material and a dielectric structure extending from the first surface of the first semiconductor material into the semiconductor substrate through the first semiconductor material.

Abstract: In a thin film photoelectric conversion deice fabricated by addition of a catalyst element with the use of a solid phase growth method, defects such as a short circuit or leakage of current are suppressed. A catalyst material which promotes crystallization of silicon is selectively added to a second silicon semiconductor layer formed over a first silicon semiconductor layer having one conductivity type, the second silicon semiconductor layer is partly crystallized by a heat treatment, a third silicon semiconductor layer having a conductivity type opposite to the one conductivity type is stacked, and element isolation is performed at a region in the second silicon semiconductor layer to which a catalyst material is not added, so that a left catalyst material is prevented from being diffused again, and defects such as a short circuit or leakage of current are suppressed.

Abstract: A photodiode (7) formed in a polycrystalline silicon layer or a continuous grain silicon layer on a base substrate (5) of a display device includes a semiconductor region of a first conductivity-type (n layer (21)), an intrinsic semiconductor region (i layer (22)), and a semiconductor region of a second conductivity-type (p layer (23)) that is opposite from the first conductivity-type. At least a portion of the intrinsic semiconductor region (i layer (22)) is amorphous silicon.

Abstract: A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface.

Abstract: Embodiments of the present invention relate to methods for depositing an amorphous film that may be suitable for using in a NIP photodiode in display applications. In one embodiment, the method includes providing a substrate into a deposition chamber, supplying a gas mixture having a hydrogen gas to silane gas ratio by volume greater than 4 into the deposition chamber, maintaining a pressure of the gas mixture at greater than about 1 Torr in the deposition chamber, and forming an amorphous silicon film on the substrate in the presence of the gas mixture, wherein the amorphous silicon film is configured to be an intrinsic-type layer in a photodiode sensor.

Abstract: A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.

Abstract: A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first p-i-n junction cell formed on a substrate, wherein the p-i-n junction cell comprises a p-type silicon containing layer, an intrinsic type silicon containing layer formed over the p-type silicon containing layer, and a n-type silicon containing layer formed over the intrinsic type silicon containing layer, wherein the intrinsic type silicon containing layer comprises a first pair of microcrystalline layer and amorphous silicon layer.

Abstract: An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

Abstract: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.

Abstract: A disordered nanowire solar cell includes doped silicon nanowires disposed in a disordered nanowire mat, a thin (e.g., 50 nm) p-i-n coating layer formed on the surface of the silicon nanowires, and a conformal conductive layer disposed on the upper (e.g., n-doped) layer of the p-i-n coating layer. The disordered nanowire mat is grown from a seed layer using VLS processing at a high temperature (e.g., 450° C.), whereby the crystalline silicon nanowires assume a random interwoven pattern that enhances light scattering. Light scattered by the nanowires is absorbed by p-i-n layer, causing, e.g., electrons to pass along the nanowires to the first electrode layer, and holes to pass through the conformal conductive layer to an optional upper electrode layer. Fabrication of the disordered nanowire solar cell is large-area compatible.

Abstract: A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

Abstract: A manufacturing method of a polycrystalline solar cell is disclosed. A polycrystalline silicon solar cell in accordance with the present invention performs crystallization-annealing amorphous silicon with a metal catalyst so as to reduce a crystallization temperature. The manufacturing method of a solar cell in accordance with the present invention includes the steps of (a) forming a first amorphous silicon layer on a substrate; (b) forming a second amorphous silicon layer on the first amorphous silicon layer; (c) forming a metal layer on the second amorphous silicon layer; (d) performing crystallization-annealing the second amorphous silicon layer; and (e) forming a third amorphous silicon layer on a resulting crystalline silicon layer of the step (d).

Abstract: A method for manufacture of application specific solar cells includes providing and processing custom design information to determine at least a cell size and a cell shape. The method includes providing a transparent substrate having a back surface region, a front surface region, and one or more grid-line regions overlying the front side surface region. The one or more grid regions provide one or more unit cells having the cell size and the cell shape. The method further includes forming a layered structure including photovoltaic materials overlying the front surface region.

Abstract: A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the thin film type solar cell is comprised of a substrate with lower and upper surfaces; a first solar cell on the upper surface of the substrate; and a second solar cell on the lower surface of the substrate, wherein a wavelength range of light absorbed into the first solar cell is different from a wave-length range of light absorbed into the second solar cell. In this case, there is no requirement for the tunneling between a first semiconductor layer of the first solar cell and a second semiconductor layer of the second solar cell, whereby the current matching is unnecessary.

Abstract: A solar cell and a method for manufacturing the same is disclosed, wherein the solar cell comprises a first cell comprised of a semiconductor wafer with a PN structure; a second cell comprised of a thin film semiconductor layer with a PIN structure, formed on one surface of the first cell; a first electrode layer formed on one surface of the second cell; and a second electrode layer formed on the other surface of the first cell. Unlike the related art solar cell, the solar cell according to the present invention can absorb the light of long-wavelength range in the first cell, and the light of short-wavelength range in the second cell. As a result, it is possible for the solar cell according to the present invention to absorb the light of all ranges, thereby realizing the high efficiency of 20% or above. Also, the entire process time becomes shortened since there is no requirement for the procedure of forming the silicon thin film for a long period of time.

Abstract: The present invention relates to improved HIT type or polysilicon emitter solar cells. According to certain aspects, the invention includes forming a masking oxide layer on the front and back of the cell and then patterning holes in the masking oxide. A HIT cell structure or polysilicon emitter solar cell structure is then formed over the patterned oxide, creating the cell junction only in the areas where holes have been cut. Benefits of the invention include that it provides a controlled interface for the HIT cell through insertion of a thin tunnel oxide. Moreover, the tunnel oxide prevents epitaxial growth of amorphous silicon, allowing it to remain amorphous for the optimum band structure. Still further, it provides a layer to protect the surface from plasma damage during deposition of the a-Si layer. Further, it may be used in conjunction with a point contact structure to further increase efficiency.

Abstract: A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first electrode layer, an insulating layer for inhibiting carriers from transferring, a photoelectric converting semiconductor layer of a non-single-crystal type, an injection blocking layer for inhibiting a first type of carriers from being injected into the semiconductor layer and a second electrode layer are laminated in this order on an insulating substrate.