Abstract: Embodiments of the invention describe providing high dynamic range imaging (HDRI or simply HDR) to an imaging pixel by coupling a floating diffusion node of the imaging pixel to a plurality of metal-oxide semiconductor (MOS) capacitance regions. It is understood that a MOS capacitance region only turns “on” (i.e., changes the overall capacitance of the floating diffusion node) when the voltage at the floating diffusion node (or a voltage difference between a gate node and the floating diffusion node) is greater than its threshold voltage; before the MOS capacitance region is “on” it does not contribute to the overall capacitance or conversion gain of the floating diffusion node. Each of the MOS capacitance regions will have different threshold voltages, thereby turning “on” at different illumination conditions. This increases the dynamic range of the imaging pixel, thereby providing HDR for the host imaging system.

Abstract: A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.

Abstract: An image sensor and a method for manufacturing an image sensor are described in which the image sensor includes at least one substrate having a plurality of light-sensitive elements forming a sensor field and first microfilter elements for wavelength-selective filtering of incident light. The first microfilter elements are attached to a transparent carrier made of glass or a transparent film, for example. A first microfilter element is situated in front of a portion of the light-sensitive elements for wavelength-selective filtering of light striking the light-sensitive element. No microfilter element is situated in front of a further portion of the light-sensitive elements.

Abstract: A solid-state imaging device includes: a semiconductor substrate having a plurality of vertical transfer channel regions and a plurality of photoelectric conversion regions arranged in a matrix; a plurality of vertical transfer electrodes, each constructed of a gate electrode and a first metal light-shielding film, formed via a gate insulating film; a transparent insulating film formed in gaps existing between the vertical transfer electrodes above the vertical transfer channel regions; and a second metal light-shielding film formed via a first interlayer insulating film to cover at least the vertical transfer channel regions.

Abstract: A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.

Abstract: A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer.

Abstract: A charge coupled device is manufactured by using a crystalline silicon film that is formed by growing a crystal in parallel with a substrate by utilizing the nickel element with an amorphous silicon film used as a starting film. The crystal growth direction is made coincident with the charge transfer direction. As a result, the charge coupled device is given high charge transfer efficiency.

Abstract: A method for manufacturing a semiconductor device includes steps of forming an embedded channel 12 in a semiconductor substrate 11, forming a resist layer on the embedded channel 12 through an oxide film 14, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity region 13 having a concentration gradient by injecting ions into the embedded channel 12 through the resist mask, and arranging transfer electrodes 15 at prescribed positions on the first impurity region 13 through the oxide film 14 after removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: A vertical-type CMOS image sensor and a fabricating method thereof by which capacitance between an upper line and a dark shield layer can be effectively reduced. The vertical-type CMOS image sensor can include an inter-metal dielectric layer having a plurality of metal lines formed over a semiconductor substrate; a passivation oxide layer formed over the inter-metal dielectric layer, wherein the uppermost surface of the passivation oxide layer includes an inclined portion between a lower portion and an upper portion corresponding to a portion of the inter-metal dielectric layer having a plurality of the metal lines; a dark shield layer formed over the upper portion of the passivation oxide layer; and a nitride layer formed over the semiconductor substrate including the dark shield layer.

Abstract: A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: Provided is a manufacturing method of a CCD solid-state imaging device having such an impurity concentration distribution with which shading is reduced and formation of a buried channel endowed with a large saturation signal charge amount is made possible. The manufacturing method includes: an oxide layer forming step of forming an oxide layer (12) on a semiconductor substrate (11); an ion implantation step of performing ion implantation through the oxide layer (12) to the semiconductor substrate (11) thereby forming a well in a position corresponding to a charge transfer portion; and an insulation layer forming step of performing insulation layer forming processing to the oxide layer (12) having undergone the ion implantation step, at least in a position corresponding to the well.

Abstract: To transfer signal charges generated by a semiconductor photoelectric conversion element in opposite directions, the center line of a first transfer gate electrode and that of a second transfer gate electrodes are arranged on the same straight line, and a U-shaped first exhausting gate electrode and a second exhausting gate electrode are arranged to oppose to each other. The first exhausting gate electrode exhausts background charges generated by a background light in the charge generation region, and the second exhausting gate electrode exhausts background charges generated by the background light in the charge generation region. The background charges exhausted by the first exhausting gate electrode are received by a first exhausting drain region and the background charges exhausted by the second exhausting gate electrode are received by a first exhausting drain region.

Abstract: A source region and drain region are formed in a surface region of a first semiconductor region. Moreover, a second semiconductor region connected to the drain region is formed in the surface region of the first semiconductor region. A third semiconductor region is formed in the first semiconductor region under the second semiconductor region, connected to the second semiconductor region, and accumulates signal charges in accordance with an incident light. A fourth semiconductor region is formed in the surface region of the first semiconductor region between the drain region and source region. Moreover, these source region, drain region, second semiconductor region, and third semiconductor region constitute a pixel, and different voltages are supplied to the drain region in an accumulation period of the signal charges in the pixel, signal readout period, and discharge period of the signal charges.

Abstract: A “black” pixel for measuring dark current is produced using carbon-based or pigment-based black photosensitive resist deposited on a support layer that is formed using negative-tone photosensitive resist, both being formed over the light sensitive portion of the black pixel. After an array of pixels is fabricated, a negative-tone resist layer is deposited on the upper insulator formed over the pixels, and a region of the negative-tone resist located over the black pixel is exposed using a first mask. A carbon-based resist layer is deposited on the negative-tone resist layer, and a region of the carbon-based resist located over the black pixel is exposed using a second mask. The negative-tone and carbon-based resists are then developed to remove portions of the layers not located over the black pixel.

Abstract: Microelectronic imagers with shaped image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device comprises an imaging die having a substrate, a curved microelectronic image sensor having a face with a convex and/or concave portion at one side of the substrate, and integrated circuitry in the substrate operatively coupled to the image sensor. The imaging die can further include external contacts electrically coupled to the integrated circuitry and a cover over the curved image sensor.