Device Sensitive To Infrared, Visible, Or Ultraviolet Radiation (epo) Patents (Class 257/E31.054)

  • Patent number: 10648708
    Abstract: A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: May 12, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yu-Li Lin, Yi-Ray Chen, Bo-Yi Sung
  • Patent number: 10162048
    Abstract: A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: December 25, 2018
    Assignee: STMicroelectronics (Crolles 2) SAS
    Inventors: Francois Roy, Boris Rodrigues, Marie Guillon, Yvon Cazaux, Benoit Giffard
  • Patent number: 8946610
    Abstract: The present invention provides a CMOS type semiconductor image sensor module in which the aperture ratio of the pixel is improved and at the same time chip use efficiency is attempted to be improved and furthermore, simultaneous shuttering of all the pixels is made possible, and a method of manufacturing the same. The semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip including an image sensor in which a plurality of pixels, each constituted by a photoelectric conversion element and transistors, are arranged, and a second semiconductor chip including an A/D converter array. Preferably, a third semiconductor chip including a memory element array is further laminated. Also, a semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip provided with the aforesaid image sensor and a fourth semiconductor chip provided with an analog type nonvolatile memory array.
    Type: Grant
    Filed: June 1, 2006
    Date of Patent: February 3, 2015
    Assignee: Sony Corporation
    Inventors: Shin Iwabuchi, Makoto Motoyoshi
  • Patent number: 8916945
    Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.
    Type: Grant
    Filed: February 15, 2010
    Date of Patent: December 23, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Akira Sakamoto, Takashi Iida, Koei Yamamoto, Kazuhisa Yamamura, Terumasa Nagano
  • Patent number: 8901691
    Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: December 2, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yun-Jong Yeo, Byeong-Hoon Cho, Ki-Hun Jeong, Hong-Kee Chin, Jung-Suk Bang, Woong-Kwon Kim, Sung-Ryul Kim, Hee-Joon Kim, Dae-Cheol Kim, Kun-Wook Han
  • Patent number: 8901690
    Abstract: A semiconductor structure for photon detection, comprising a substrate composed of a semiconductor material having a first doping, a contact region fitted at the frontside of the substrate, a bias layer composed of a semiconductor material having a second doping, which is arranged on the backside of the substrate at a distance from the contact region, wherein the contact region at least partly lies opposite the bias layer, such that an overlap region is present in a lateral direction, a guard ring, which is arranged at the frontside of the substrate and surrounds the contact region, wherein a reverse voltage can be applied between the contact region and the guard ring. In order to enable more cost-effective production, the overlap region has a lateral extent amounting to at least one quarter of the distance between contact region and bias layer.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: December 2, 2014
    Assignee: ESPROS Photonics AG
    Inventors: Martin Popp, Beat De Coi, Marco Annese
  • Patent number: 8889453
    Abstract: A thermoelectric element module has P-type thermoelectric materials and N-type thermoelectric materials alternately joined between a pair of substrates. The thermoelectric materials include a thermoelectric mixture powder in which a thermoelectric material powder and a low-melting metal powder are mixed at a predetermined ratio. The thermoelectric mixture powder is thermally treated at a temperature lower than a melt point of the thermoelectric material, the thermoelectric mixture powder is formed as the low-melting metal is melted, and at the same time both ends of the thermoelectric materials are joined to the pair of substrates. A method for manufacturing such a thermoelectric material is also provided.
    Type: Grant
    Filed: February 4, 2010
    Date of Patent: November 18, 2014
    Assignee: LG Chem, Ltd.
    Inventor: Cheol-Hee Park
  • Patent number: 8847202
    Abstract: A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (<100 mV for both bands) and exhibits a dark current density in the longer wavelength band comparable to that obtained with single-color detectors.
    Type: Grant
    Filed: January 17, 2012
    Date of Patent: September 30, 2014
    Assignee: HRL Laboratories, LLC
    Inventors: Brett Z. Nosho, Rajesh D. Rajavel, Hasan Sharifi, Sevag Terterian
  • Patent number: 8835979
    Abstract: Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device with increased sensitivity and reduced dark current. A first barrier is adjacent the semiconductor contact; a second barrier layer is between the first barrier layer and the absorber layer. The barrier layers may be doped N type or P type with Beryllium, Carbon, Silicon or Tellurium. The energy bandgap is designed to facilitate minority carrier current flow in the contact region and block minority current flow outside the contact region.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: September 16, 2014
    Assignee: HRL Laboratories, LLC
    Inventors: Terence J De Lyon, Rajesh D Rajavel, Hasan Sharifi
  • Patent number: 8809925
    Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is disposed in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: August 19, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Hsin-Chih Tai, Duli Mao, Zhenhong Fu
  • Patent number: 8796694
    Abstract: A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: August 5, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tetsuo Hatakeyama, Takashi Shinohe
  • Patent number: 8791512
    Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 29, 2014
    Assignees: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Francois Roy, Julien Michelot
  • Patent number: 8765514
    Abstract: A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: July 1, 2014
    Assignee: L-3 Communications Corp.
    Inventors: Athanasios J. Syllaios, Michael F. Taylor, Sameer K. Ajmera
  • Patent number: 8735208
    Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: May 27, 2014
    Assignees: STMicroelectronics S.A., STMicroelectronics (Crolles 2) SAS
    Inventors: François Roy, Michel Marty
  • Patent number: 8723184
    Abstract: A substrate-free semiconducting sheet has an array of semiconducting elements dispersed in a matrix material. The matrix material is bonded to the edge surfaces of the semiconducting elements and the substrate-free semiconducting sheet is substantially the same thickness as the semiconducting elements.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: May 13, 2014
    Assignee: Goldeneye, Inc.
    Inventors: Karl W. Beeson, Scott M. Zimmerman, William R. Livesay, Richard L. Ross
  • Patent number: 8691637
    Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
    Type: Grant
    Filed: December 22, 2011
    Date of Patent: April 8, 2014
    Assignee: Sony Corporation
    Inventor: Shinichi Arakawa
  • Publication number: 20140091375
    Abstract: A device includes a semiconductor substrate and implant isolation region extending from a top surface of the semiconductor substrate into the semiconductor substrate surrounding an active region. A gate dielectric is disposed over an active region of the semiconductor substrate and extends over the implant isolation region. A gate electrode is disposed over the gate dielectric and two end cap hardmasks are between the gate dielectric and the gate electrode over the implant isolation region. The two end cap hardmasks include same dopants as those implanted into the active region.
    Type: Application
    Filed: October 1, 2012
    Publication date: April 3, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Tzu-Hsuan Hsu, Wen-De Wang, Wen-I Hsu
  • Publication number: 20140042299
    Abstract: A device includes an image sensor chip including an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip. The read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip. The peripheral circuit chip includes a logic circuit, a through via penetrating through a semiconductor substrate of the peripheral circuit chip, and an electrical connector at a bottom surface of the peripheral circuit chip. The electrical connector is electrically coupled to the logic circuit in the peripheral circuit chip through the through via.
    Type: Application
    Filed: August 9, 2012
    Publication date: February 13, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Hsun Wan, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu
  • Patent number: 8642943
    Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
    Type: Grant
    Filed: December 3, 2010
    Date of Patent: February 4, 2014
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroki Mori, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai, Kouhei Miura, Hideaki Nakahata, Katsushi Akita, Takashi Ishizuka, Kei Fujii
  • Patent number: 8643133
    Abstract: A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: February 4, 2014
    Assignee: Seiko Epson Corporation
    Inventor: Yasushi Tsuchiya
  • Patent number: 8629456
    Abstract: A semiconductor device includes a semiconductor substrate made of silicon carbide and having a surface, a normal vector for the surface having an off angle with respect to a <0001> direction or a <000-1> direction, a semiconductor layer of a first conductivity type formed on the semiconductor substrate, a first semiconductor region of a second conductivity type formed in a surface region of the semiconductor layer, a source region of a first conductivity type formed in a surface region of the first semiconductor region, a second semiconductor region of a second conductivity type formed in the surface region of the semiconductor layer, contacting the first semiconductor region, and having a bottom surface lower than a bottom surface of the first semiconductor region, wherein at least one end of the bottom surface of the second semiconductor region is perpendicular to an off angle direction.
    Type: Grant
    Filed: March 19, 2009
    Date of Patent: January 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tetsuo Hatakeyama, Takashi Shinohe
  • Publication number: 20140007928
    Abstract: Described herein is a photovoltaic device operable to convert light to electricity, comprising a substrate, one or more structures essentially perpendicular to the substrate, and a reflective layer disposed on the substrate, and one or more junctions conformally disposed on the one or more structures.
    Type: Application
    Filed: July 6, 2012
    Publication date: January 9, 2014
    Applicant: ZENA TECHNOLOGIES, INC.
    Inventors: Young-June YU, Munib Wober
  • Patent number: 8624309
    Abstract: A sensor includes a substrate, a floating diffusion node in the substrate, a photodiode in the substrate laterally spaced apart from the floating diffusion region and a transfer transistor coupling the photodiode and the floating diffusion region. The sensor further includes a photodiode control electrode disposed on the photodiode and configured to control a carrier distribution of the photodiode responsive to a control signal applied thereto. The floating diffusion region may have a first conductivity type, the photodiode may include a first semiconductor region of a second conductivity type disposed on a second semiconductor region of the first conductivity type, and the photodiode control electrode may be disposed on the first semiconductor region. The photodiode may be configured to receive incident light from a side of the substrate opposite the photodiode control electrode.
    Type: Grant
    Filed: March 7, 2011
    Date of Patent: January 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yi-tae Kim, Jung-chak Ahn
  • Patent number: 8614112
    Abstract: A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: December 24, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keh-Chiang Ku, Chia-Ying Liu, Hsin-Chih Tai, Vincent Venezia
  • Publication number: 20130249817
    Abstract: A photosensor includes a sensing switching element, a sensing element, and a reset switching element. The sensing switching element includes an output terminal connected to a sensing signal line, a control terminal connected to a first gate line, and an input terminal connected to the first node. The sensing element includes an output terminal connected to a first node, a control terminal connected a second gate line disposed next to the first gate line, and an input terminal connected to a source voltage line transmitting a source voltage. The sensing element senses light. The reset switching element includes an output terminal connected to the first node, a control terminal connected to the second gate line, and an input terminal connected to a driving voltage line transmitting a driving voltage.
    Type: Application
    Filed: July 3, 2012
    Publication date: September 26, 2013
    Inventors: Suk Won JUNG, Seung Mi SEO, Sung Hoon YANG
  • Publication number: 20130235210
    Abstract: A 3D wafer-integration uncooled infrared (IR) microbolometer focal plane array (FPA) sensor includes a first die with an FPA of uncooled IR microbolometers, a second die signal-processing layer. The dies are vertically aligned, stacked with 3D wafer bonding, and interconnected. Interconnection include vertical electrical interconnects. Separate optimized manufacturing processes are used for die, so that additional processing costs of the FPA die are leveraged and 3D integration is completed at wafer level, minimizing total device cost and maximizing die count per wafer.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Applicant: BAE SYSTEMS Information & Electronic Systems Integration Inc.
    Inventors: Rosanne H. Tinkler, Richard J. Blackwell, JR.
  • Patent number: 8519459
    Abstract: A backside illumination type solid-state imaging device includes stacked semiconductor chips which are formed such that two or more semiconductor chip units are bonded to each other, at least a first semiconductor chip unit is formed with a pixel array and a first multi-layered wiring layer, and a second semiconductor chip unit is formed with a logic circuit and a second multi-layered wiring layer, a connection wire which connects the first semiconductor chip unit and the second semiconductor chip unit, and a first shield wire which shields adjacent connection wires in one direction therebetween.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: August 27, 2013
    Assignee: Sony Corporation
    Inventors: Machiko Horiike, Kazuchiro Itonaga
  • Patent number: 8513753
    Abstract: A photodiode pixel sensor is provided having a buried region of opposite conductivity type than a semiconductor substrate in which the sensor is formed. The photodiode pixel sensor further includes a well region arranged upon and in contact with an upper surface of the buried region and a collection-junction extending into the well region. The well region and collection-junction are of the same conductivity type as the buried region and include greater net concentrations of dopants than the buried region and the well region, respectively. Such a configuration creates a drift field to channel (i.e., funnel) charge to the collection-junction. In some cases, the collection-junction may be a drain region of a transistor spaced above the buried region. An imaging device is also provided which includes at least two adjacent photodiode pixel sensors each including the aforementioned architecture isolated from each other by a distance less than approximately 2.0 microns.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: August 20, 2013
    Assignee: Cypress Semiconductor Corporation
    Inventor: Fredrick B. Jenne
  • Publication number: 20130176396
    Abstract: A broadband imager, which is able to image both IR and visible light, is disclosed. In one embodiment, an IR sensitive region of an IR pixel underlies the R, G, B sensitive regions of R, G, and B visible pixels. Therefore, the IR pixel receives IR light through a same surface area of the photosensor through which the R, G, and B pixels receive visible light. However, the IR light generates electron-hole pairs deeper below the common surface area shared by the RGB and IR pixels, than visible light. The photosensor also has a charge accumulation region for accumulating charges generated in the IR sensitive region and an electrode above the charge accumulation region for providing a voltage to accumulate the charges generated in the IR pixel.
    Type: Application
    Filed: January 6, 2012
    Publication date: July 11, 2013
    Applicant: Microsoft Corporation
    Inventors: David Cohen, Giora Yahav
  • Patent number: 8476102
    Abstract: A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: July 2, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hideaki Takada, Toru Koizumi, Yasuo Yamazaki, Tatsuya Ryoki
  • Patent number: 8471261
    Abstract: A solid-state image pickup device 1 is back surface incident type and includes a semiconductor substrate 10, a semiconductor layer 20 and a light receiving unit 30. The solid-state image pickup device 1 photoelectrically converts light incident on the back surface S2 of the semiconductor substrate 10 into signal electrical charges to image an object. The semiconductor substrate 10 has a resistivity ?1. A semiconductor layer 20 is provided on the surface S1 of the semiconductor substrate 10. The semiconductor layer 20 has a resistivity ?2. Where, ?2>?1. A light receiving unit 30 is formed in the semiconductor layer 20. The light receiving unit 30 receives signal charges produced by the photoelectric conversion.
    Type: Grant
    Filed: July 9, 2007
    Date of Patent: June 25, 2013
    Assignee: Renesas Electronics Corporation
    Inventor: Yasutaka Nakashiba
  • Patent number: 8466532
    Abstract: In a photoelectric conversion apparatus including a charge holding portion, a part of an element isolation region contacting with a semiconductor region constituting the charge holding portion extends from a reference surface including the light receiving surface of a photoelectric conversion element into a semiconductor substrate at a level equal to or deeper than the depth of the semiconductor region in comparison with the semiconductor region.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: June 18, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventor: Takanori Watanabe
  • Patent number: 8441094
    Abstract: A resonator element for the absorption and/or conversion of electromagnetic waves having a predefined wavelength, in particular infrared radiation having a wavelength of 2 ?m to 200 ?m, into heat, has a three-layer structure formed of a first metal layer, a second metal layer and a dielectric layer interposed between the two metal layers. The maximum lateral dimension of the layers is in the range between one quarter and a half of the predefined wavelength.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: May 14, 2013
    Assignee: AIT Austrian Institute of Technology GmbH
    Inventors: Hubert Brueckl, Thomas Maier
  • Publication number: 20130092982
    Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
    Type: Application
    Filed: October 13, 2011
    Publication date: April 18, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Sing-Chung Hu, Hsin-Chih Tai, Duli Mao, Manoj Bikumandla, Wei Zheng, Yin Qian, Zhibin Xiong, Vincent Venezia, Keh-Chiang Ku, Howard E. Rhodes
  • Patent number: 8394650
    Abstract: A laminated module or panel of solar cells and a laminating method for making same comprise a top layer of melt flowable optically transparent molecularly flexible thermoplastic and a rear sheet of melt flowable insulating molecularly flexible thermoplastic both melt flowing at a temperature between about 80° C. and 250° C. and having a low glass transition temperature. Solar cells are encapsulated by melt flowing the top layer and rear sheet, and electrical connections are provided between front and back contacts thereof. Light passing through the transparent top layer impinges upon the solar cells and the laminated module exhibits sufficient flexural modulus without cross-linking chemical curing. Electrical connections may be provided by melt flowable electrically conductive molecularly flexible thermoplastic adhesive or by metal strips or by both.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: March 12, 2013
    Assignee: Amerasia International Technology, Inc.
    Inventor: Kevin Kwong-Tai Chung
  • Publication number: 20130048865
    Abstract: There are provided a radiation detector and a radiological image radiographing apparatus capable of improving the quality of an obtained radiological image while suppressing the deterioration of the sensitivity of a phosphor layer according to the cumulative dose of radiation. In the radiation detector, a second scintillator which absorbs lower radiation energy than radiation energy absorbed by a first scintillator and whose deterioration of sensitivity according to the cumulative dose of radiation is larger than that of the first scintillator is provided at the downstream side of the first scintillator in the emission direction of the radiation. In addition, two substrates of a first substrate, which mainly acquires electric charges corresponding to light generated by the first scintillator, and a second substrate, which mainly acquires electric charges corresponding to light generated by the second scintillator, are provided.
    Type: Application
    Filed: August 15, 2012
    Publication date: February 28, 2013
    Applicant: FUJIFILM CORPORATION
    Inventors: Naoyuki NISHINO, Haruyasu NAKATSUGAWA, Yasunori OHTA, Keiichiro SATO
  • Publication number: 20130049145
    Abstract: A radiation detector comprising a metal-carbon junction wherein a layer of carbon (11) is deposited on a layer of metal (12) having a work function higher than the work function of carbon (11), the junction having electrical characteristic of a diode.
    Type: Application
    Filed: August 30, 2011
    Publication date: February 28, 2013
    Applicant: Instytut Fizyki Jadrowej im. Henryka Niewodniczanskiego PAN
    Inventors: Jacek Andrzej JAWORSKI, Eric Fleury, Malgorzata Kac, Marzena Mitura-Nowak, Zaneta Swiatkowska-Warkocka
  • Publication number: 20130048838
    Abstract: A light-receiving element includes an InP substrate 1, a light-receiving layer 3 having an MQW and located on the InP substrate 1, a contact layer 5 located on the light-receiving layer 3, a p-type region 6 extending from a surface of the contact layer 5 to the light-receiving layer, and a p-side electrode 11 that forms an ohmic contact with the p-type region. The light-receiving element is characterized in that the MQW has a laminated structure including pairs of an InxGa1-xAs (0.38?x?0.68) layer and a GaAs1-ySby (0.25?y?0.73) layer, and in the GaAs1-ySby layer, the Sb content y in a portion on the InP substrate side is larger than the Sb content y in a portion on the opposite side.
    Type: Application
    Filed: December 3, 2010
    Publication date: February 28, 2013
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Hiroki Mori, Yasuhiro Iguchi, Hiroshi Inada, Youichi Nagai, Kouhei Miura, Hideaki Nakahata, Katsushi Akita, Takashi Ishizuka, Kei Fujii
  • Publication number: 20130049075
    Abstract: A solid-state imaging device having a protective wiring inserted between adjacent pixel pairs so that the generation of electrical charges caused by a voltage variation in adjacent pixel pairs may be restrained, and a method for manufacturing the same. A solid-state imaging device with an additional protective wiring may be provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair. A method for manufacturing a solid-state imaging device with an additional protective wiring which is provided between pixel pairs to restrain the generation of electric charges within one of the pixel pairs caused by a voltage variation in the other pixel pair.
    Type: Application
    Filed: July 10, 2012
    Publication date: February 28, 2013
    Applicant: Dongbu HiTek Co., Ltd.
    Inventor: An Do KI
  • Publication number: 20130032912
    Abstract: A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.
    Type: Application
    Filed: August 4, 2011
    Publication date: February 7, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Szu-Ying Chen, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung
  • Patent number: 8358167
    Abstract: A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: January 22, 2013
    Assignee: E Ink Holdings Inc.
    Inventors: Wei-Chou Lan, Sung-Hui Huang, Chia-Chun Yeh, Ted-Hong Shinn
  • Publication number: 20130014800
    Abstract: A photovoltaic device includes first and second photovoltaic cells, with each of the first and second photovoltaic cells having a substrate, a lower electrode disposed above the substrate along a deposition axis and that includes a conductive light transmissive layer, one or more semiconductor layers disposed above the substrate along the deposition axis, and an upper electrode disposed above the one or more semiconductor layers along the deposition axis. The semiconductor layers convert incident light into an electric current. The first and second photovoltaic cells are separated by first and second separation gaps. The first separation gap extend along the deposition axis through the lower electrode from the substrate and the second separation gap extends from a deposition surface of the light transmissive layer of the lower electrode and through a remainder of the lower electrode and the one or more semiconductor layers along the deposition axis.
    Type: Application
    Filed: July 13, 2011
    Publication date: January 17, 2013
    Applicant: ThinSilicon Corporation
    Inventors: Jason Stephens, Kunal Girotra, Guleid Hussen
  • Publication number: 20130015424
    Abstract: An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer.
    Type: Application
    Filed: February 29, 2012
    Publication date: January 17, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dae-young CHUNG, Kyung-sang CHO, Tae-ho KIM, Byoung-lyong CHOI
  • Patent number: 8350351
    Abstract: A semiconductor light receiving device includes: a first semiconductor light receiving element that is provided on a semiconductor substrate and has a mesa structure having an upper electrode to be coupled to an electrode wiring of a mounting carrier and a lower electrode; a first mesa that is provided on the semiconductor substrate and has an upper electrode coupled electrically to a lower electrode of the first semiconductor light receiving element with a wiring provided on the semiconductor substrate; and a second mesa that is provided on the semiconductor substrate and has an upper electrode that has a same electrical potential as the upper electrode of the first semiconductor light receiving element when coupled to the electrode wiring on the mounting carrier.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: January 8, 2013
    Assignee: Sumitomo Electric Device Innovations, Inc.
    Inventor: Yuji Koyama
  • Patent number: 8319301
    Abstract: An image sensor includes at least one photosensitive element disposed in a semiconductor substrate. Metal conductors may be disposed on the semiconductor substrate. A filter may be disposed between at least two individual metal conductors and a micro-lens may be disposed on the filter. There may be insulator material disposed between the metal conductors and the semiconductor substrate and/or between individual metal conductors. The insulator material may be removed so that the filter may be disposed on the semiconductor substrate.
    Type: Grant
    Filed: February 11, 2008
    Date of Patent: November 27, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Hsin-Chih Tai, Duli Mao, Vincent Venezia, WeiDong Qian, Ashish Shah, Howard E. Rhodes
  • Publication number: 20120235212
    Abstract: Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
    Type: Application
    Filed: March 17, 2011
    Publication date: September 20, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Gang Chen, Sing-Chung Hu, Duli Mao, Hsin-Chih Tai, Yin Qian, Vincent Venezia, Rongsheng Yang, Howard E. Rhodes
  • Publication number: 20120234374
    Abstract: A method of forming a longitudinally continuous photovoltaic (PV) module includes arranging strips of thin-film PV material to be spaced apart from and substantially parallel to each other. The method also includes laminating a bottom layer to a first surface of the strips of thin-film PV material, the bottom layer including multiple bottom layer conductive strips. The method also includes laminating a top layer to a second surface of the strips of thin-film PV material opposite the first surface, the top layer including multiple top layer conductive strips. Laminating the bottom layer to the first surface and laminating the top layer to the second surface includes serially and redundantly interconnecting the strips of thin-film PV material together by connecting each one of the strips of thin-film PV material to a different one of the bottom layer conductive strips and a different one of the top layer conductive strips.
    Type: Application
    Filed: May 31, 2012
    Publication date: September 20, 2012
    Applicant: TENKSOLAR
    Inventor: Dallas W. Meyer
  • Publication number: 20120223291
    Abstract: A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.
    Type: Application
    Filed: September 29, 2010
    Publication date: September 6, 2012
    Applicant: RESEARCH TRIANGLE INSTITUTE, INTERNATIONAL
    Inventors: Ethan Klem, John Lewis
  • Publication number: 20120211858
    Abstract: A thermal detector includes a substrate, a thermal detection element and a support member. The substrate has a recess part with a bottom surface of the recess part being a curved light-reflecting surface. The thermal detection element has a light-absorbing film. The support member supports the thermal detection element. The substrate and the support member are arranged to form a hollow part therebetween. The support member includes a light-absorbing part in which impurities are dispersed in polycrystalline silicon with the light-absorbing part being arranged in at least a part of a surface of the support member facing toward the hollow part so that the light-absorbing part being irradiated by light.
    Type: Application
    Filed: February 17, 2012
    Publication date: August 23, 2012
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Yasushi TSUCHIYA
  • Publication number: 20120211068
    Abstract: A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 23, 2012
    Applicant: Emcore Solar Power, Inc.
    Inventors: Arthur Cornfeld, John Spann, Pravin Patel, Mark A. Stan, Benjamin Cho, Paul R. Sharps, Daniel J. Aiken