Abstract: A non-uniform gate dielectric charge for pixel sensor cells, e.g., CMOS optical imagers, and methods of manufacturing are provided. The method includes forming a gate dielectric on a substrate. The substrate includes a source/drain region and a photo cell collector region. The method further includes forming a non-uniform fixed charge distribution in the gate dielectric. The method further includes forming a gate structure on the gate dielectric.
Type:
Grant
Filed:
May 14, 2010
Date of Patent:
February 26, 2013
Assignee:
International Business Machines Corporation
Inventors:
Brent A. Anderson, Andres Bryant, William F. Clark, Jr., John J. Ellis-Monaghan, Edward J. Nowak
Abstract: A method of forming a CMOS image sensor device, the method includes providing a semiconductor substrate having a P-type impurity characteristic including a surface region. The method forma first thickness of silicon dioxide in a first region of the surface region, a second thickness of silicon dioxide in a second region of the surface region, and a third thickness of silicon dioxide in a third region of the surface region. The method includes forming a first gate layer overlying the second region and a second gate layer overlying the third region, while exposing a portion of the first thickness of silicon dioxide. An N-type impurity characteristic is formed within a region within a vicinity underlying the first thickness of silicon dioxide in the first region of the surface region to cause formation of a photo diode device characterized by the N-type impurity region and the P-type substrate.
Type:
Grant
Filed:
October 27, 2008
Date of Patent:
November 1, 2011
Assignee:
Semiconductor Manufacturing International (Shanghai) Corporation
Abstract: An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
Type:
Grant
Filed:
February 13, 2004
Date of Patent:
November 7, 2006
Assignee:
Dongguk University
Inventors:
Hwa-Mok Kim, Tae-Won Kang, Kwan-Soo Chung