Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.

Abstract: An optical system includes a housing, an imaging device housed within the housing, and a window in the housing providing an optical path through the housing to the imaging device. The window includes a transparent substrate and a coating over the transparent substrate. The coating is made of an electrically conductive semiconductor. The imaging device is sensitive to and the coating is transparent to at least one of MWIR and/or LWIR wavelengths.

Abstract: A transparent conductive oxide (TCO) material includes a metal-rich metal oxide having an average formula (M1, M2 . . . Mn)yOx, where M1, M2 and Mn are the same metal or different metals and a molar ratio of y:x is selected from a range of 0.1 to 20. A method of making a metal-rich metal oxide material includes co-depositing a metal and a stoichiometric metal oxide and annealing the deposited material above 100° C. In an embodiment, a thin-film solar cell, includes an electrode, a transparent conductive oxide (TCO) disposed on the electrode, a solar absorbing layer disposed on the TCO, and a metal-rich metal oxide disposed on the solar absorbing layer. A method of fabricating a thin-film solar cell is also disclosed.

Abstract: [Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5 ?m or less, and a degree of orientation represented by I(222)/[I(222)+I(400)] is 0.52 or more, where I(222) and I(400) represent integrated intensities of the (222) plane and the (400) plane of a Zn2SnO4 phase measured by X-ray diffraction using the CuK? radiation.

Abstract: In a conductive laminate, a transparent conductive thin film laminate 2 including at least two transparent conductive thin films and a metal layer 3 are formed in this order on at least one surface of a transparent base. In the transparent conductive thin film laminate 2, a first transparent conductive thin film 21 that is closest to the metal layer 3 is a metal oxide layer, or a composite metal oxide layer containing a principal metal and at least one impurity metal. Transparent conductive thin film 22 other than the first transparent conductive thin film is a composite metal oxide layer containing a principal metal and at least one impurity metal. The content ratio of impurity metal in the first transparent conductive thin film is not the highest of content ratios of impurity metal in the transparent conductive thin films which form the transparent conductive thin film laminate 2.

Abstract: In a semiconductor device including a transistor using an oxide semiconductor film, stable electric characteristics can be provided and high reliability can be achieved. A structure of the semiconductor device, which achieves high-speed response and high-speed operation, is provided. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer are stacked in order and a sidewall insulating layer is provided on the side surface of the gate electrode layer, the sidewall insulating layer has an oxygen-excess regions, which is formed in such a manner that a first insulating film is formed and then is subjected to oxygen doping treatment, a second insulating is formed over the first insulating film, and a stacked layer of the first insulating film and the second insulating film are etched.

Abstract: A homogenous thin film layer is patterned into a transparent conductive portion and a non-conductive portion without use of etching through the thin film. Instead, conductive fine-wires which are convertible in one embodiment into non-conductive fine-wires are selectively converted into the non-conductive form. In an alternate embodiment, the homogenous thin film layer which includes conductive fine-wires is provided in a curable liquid form and selected portions of the liquid formed are cured into being affixed to substrate. Remaining portions can be washed away. In the case of display devices using transparent electrodes, a thin thin-film transistor array substrate is provided where the initially homogenous thin film which is and then converted into patterned conductive and non-conductive sections forms the pixel-electrodes and/or common electrode of the display device.

Abstract: A photoelectric conversion element in accordance with an embodiment includes a photoelectric conversion layer, a cathode electrode, and an anode electrode. The cathode electrode is arranged on one surface of the photoelectric conversion layer and includes monolayer graphene and/or multilayer graphene in which a portion of carbon atoms is substituted with at least nitrogen atoms. The anode electrode is arranged on the other surface of the photoelectric conversion layer.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process.

Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes: (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.

Abstract: A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer.

Abstract: A photoelectric conversion apparatus includes: an active matrix-type TFT array substrate on which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, wherein the photoelectric conversion element connects with a drain electrode via a contact hole opened through a first interlayer insulation film provided above the thin film transistor, wherein a data line and a bias line are connected with the source electrode and the photoelectric conversion element via respective contact holes opened through the second interlayer insulation, and wherein at least a part of the photoelectric conversion element is fixed to have a shape different from a normal pixel between pixels adjacent to each other in an extending direction of the gate line, and an electrical connection between the photoelectric conversion element and the data line is cut off in the transistor of the pixel having the different shape.

Abstract: This invention relates to a method of manufacturing a substrate for photoelectric conversion device including, on a substrate, a first electrode layer formed of a transparent conductive material. The method includes a first transparent conductive film forming step of forming a first transparent conductive film on the substrate, a second transparent conductive film forming step of forming a second transparent conductive film under a film forming condition that an etching rate is low compared with the first transparent conductive film at a later etching step, and an etching step of wet-etching the second and first transparent conductive films to form recesses that pierce through at least the second transparent conductive film, with the bottoms of the recesses being present in the first transparent conductive film.

Abstract: A photoelectric conversion device comprises a photoelectric conversion layer; a plurality of structures made of a dielectric substance; and a medium layer for transmitting light interposed between the photoelectric conversion layer and the structures or between the structures, or both, wherein the plurality of structures and the medium layer satisfy ndie>nmed and Dave×nmed/?max<0.3, wherein ?max is a maximal sensitivity wavelength at which the sensitivity of the photoelectric conversion layer to light energy is maximal, nmed is a refractive index of the medium layer at the wavelength ?max, ndie is a refractive index of the structures at the wavelength ?max, and Dave is an average of shortest distances between an light exposure surface of the photoelectric conversion layer and the structures.

Abstract: A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 Torr. The semiconductor assembly includes a semiconductor layer disposed on a support, and the semiconductor layer includes cadmium and sulfur.

Abstract: In an IPS type liquid crystal display device having a reduced number of layers and formed through a reduced number of photolithography steps, an off current of a TFT is prevented from increasing due to photocurrent. A drain line, a TFT drain electrode, and a source electrode each have a multilayer structure including metal and a semiconductor layer. The drain line and the semiconductor layer formed thereunder are separated from the drain electrode and the semiconductor layer formed thereunder with the drain line and the drain electrode connected by a blocking conductive film formed of ITO of which the pixel electrode is also formed. Photocurrent generated by backlight is blocked by the blocking conductive film without flowing into the TFT. Therefore, the number of photomasks required in the production process can be decreased without an increase of causing the off current of the TFT.

Abstract: A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell 10 includes, in the interior of or on the conductive-substrate-side surface of the porous semiconductor layer 16, conductive metal film 20, such as a film of tungsten, having a large number of randomly located penetrations 24. Penetrations 24 of the conductive metal film 20 are formed by forming a fine-particle layer on the surface of the porous semiconductor layer, forming a conductive metal film on the surface of the fine-particle layer, and making the fine-particle layer disappear by heating or solvent-cleaning.

Abstract: A method for manufacturing a multilayered structure may include forming a transparent conductive oxide layer including cadmium stannate adjacent to a substrate and annealing the structure in an annealing environment including a reducing agent at a temperature greater than 500 degrees C. to crystallize the cadmium stannate.

Abstract: Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a front contact for the semiconductor wafer, wherein the second step is performed after completion of the first step.

Abstract: A dye-sensitized solar cell is provided, wherein it can be produced by a relatively easy and simple process and ensures high conversion efficiency even in cases where the thickness of the porous semiconductor layer is increased. The dye-sensitized solar cell 10 includes, in the interior of or on the conductive-substrate-side surface of the porous semiconductor layer 16, conductive metal film 20, such as a film of tungsten, having a large number of randomly located penetrations 24. Penetrations 24 of the conductive metal film 20 are formed by forming a fine-particle layer on the surface of the porous semiconductor layer, forming a conductive metal film on the surface of the fine-particle layer, and making the fine-particle layer disappear by heating or solvent-cleaning.

Abstract: A method of fabricating a transparent electrode for use in a quantum dot sensitized solar cell, and a quantum dot sensitized solar cell fabricated according to the method are provided.

Abstract: A thin film solar cell and process for forming the same. The solar cell includes a bottom electrode layer, semiconductor light absorbing layer, and a TCO top electrode layer. In one embodiment, a TCO seed layer is formed between the top electrode and absorber layers to improve adhesion of the top electrode layer to the absorber layer. In one embodiment, the seed layer is formed at a lower temperature than the TCO top electrode layer and has a different microstructure.

Abstract: A method for processing a thin film photovoltaic module. The method includes providing a plurality of substrates, each of the substrates having a first electrode layer and an overlying absorber layer composed of copper indium gallium selenide (CIGS) or copper indium selenide (CIS) material. The absorber material comprises a plurality of sodium bearing species. The method maintains the plurality of substrates in a controlled environment after formation of at least the absorber layer through one or more processes up to a lamination process. The controlled environment has a relative humidity of less than 10% and a temperature ranging from about 10 degrees Celsius to about 40 degrees Celsius. The method subjects the plurality of substrates to a liquid comprising water at a temperature from about 10 degrees Celsius to about 80 degrees Celsius to process the plurality of substrates after formation of the absorber layer.

Abstract: Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p-type absorber layer (of cadmium telluride) of a p-n junction; and, curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material, an optional solvent system, and a binder. Thin film photovoltaic devices are also provided, such as those that have a conductive coating that is substantially free from an acid.

Abstract: Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.

Abstract: The present application discloses a method for producing a stable ultra thin metal film that comprises the following steps: a) deposition, on a substrate, of an ultra thin metal film, such as an ultra thin film of nickel, chromium, aluminum, or titanium; b) thermal treatment of the ultra thin metal film, optionally in combination with an O2 treatment; and c) obtaining a protective oxide layer on top of the ultra thin metal film.

Abstract: A method for forming a photovoltaic device includes forming a plurality of three-dimensional structures in a substrate to form a textured profile. A first transparent electrode layer is formed on the structures from a transparent conductive oxide having a metal dopant and deposited at a thickness configured to maintain the textured profile. The first transparent electrode layer is annealed to increase conductivity and transmittance. A continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer is formed on the first transparent electrode layer. A second electrode layer is deposited over the photovoltaic stack.

Abstract: A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.

Abstract: A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10 Torr. The semiconductor assembly includes a semiconductor layer disposed on a support, and the semiconductor layer includes cadmium and sulfur.

Abstract: An image sensor package includes an image sensor chip and crystalline handler. The image sensor chip includes a substrate, and a plurality of photo detectors and contact pads at the front surface of the substrate. The crystalline handler includes opposing first and second surfaces, and a cavity formed into the first surface. A compliant dielectric material is disposed in the cavity. The image sensor front surface is attached to the crystalline substrate handler second surface. A plurality of electrical interconnects each include a hole aligned with one of the contact pads, with a first portion extending from the second surface to the cavity and a second portion extending through the compliant dielectric material, a layer of insulation material formed along a sidewall of the first portion of the hole, and conductive material extending through the first and second portions of the hole and electrically coupled to the one contact pad.

Abstract: Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn1-xMgxO (0.096?x?0.183).

Abstract: A photoelectric conversion device includes: a first substrate of which end portions are cut off so as to slope or with a groove shape; a photodiode and an amplifier circuit over the first substrate; a first electrode electrically connected to the photodiode and provided over one end portion of the first substrate; a second electrode electrically connected to the amplifier circuit and provided over an another end portion of the first substrate; and a second substrate having third and fourth electrodes thereon. The first and second electrodes are attached to the third and fourth electrodes, respectively, with a conductive material provided not only at the surfaces of the first, second, third, and fourth electrodes facing each other but also at the side surfaces of the first and second electrodes to increase the adhesiveness between a photoelectric conversion device and a member on which the photoelectric conversion device is mounted.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.

Abstract: In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.

Abstract: The present invention provides a method for manufacturing an electrode of a dye-sensitized solar cell using an inkjet printing process, an electrode formed thereby, and a dye-sensitized solar cell having the electrode. According to the method, a metal electrode is formed by jetting an ink solution containing nano metal powder on a transparent substrate or a transparent substrate in which a barrier layer is deposited to improve coating performance of a transparent conductive layer. A transparent conductive layer is formed on the transparent substrate on which the metal electrode is formed. The transparent conductive layer protects the metal electrode from liquid electrolyte.

Abstract: A solar cell includes a substrate, a rear electrode layer on the substrate, the rear electrode layer is divided by a first pattern unit, a light absorption layer on the rear electrode layer, the light absorption layer is divided by a second pattern unit that is spaced apart from the first pattern unit, a translucent electrode layer on the light absorption layer, the translucent electrode layer is divided by a third pattern unit that is spaced apart from the first and second pattern units, and a light transmission unit that extends through the rear electrode layer and the light absorption layer. The light transmission unit is between the second pattern unit and the third pattern unit.

Abstract: Disclosed is a method of fabricating a thin film solar cell. A separation process (‘P4’ process) of insulating a thin film solar cell from the outside is integrally performed with a transparent electrode patterning process (‘P1’ process) and a metallic electrode patterning process (‘P3’ process). This may reduce the fabrication costs and enhance spatial efficiency as the ‘P4’ process and equipment for the ‘P4’ process are not required.

Abstract: Systems and processes are disclosed for forming a thin film photovoltaic device. A process includes heating a thin film photovoltaic sub-device to an anneal temperature. The thin film photovoltaic sub-device includes a glass substrate and a transparent conductive oxide deposited on the glass substrate. The process further includes quenching the thin film photovoltaic sub-device with a quenching gas to cool the thin film photovoltaic sub-device to a quenched temperature. The quenching gas includes an inert gas.

Abstract: A solar cell includes a rear electrode layer on a substrate and divided into a plurality of portions by a first separation groove, a light absorption layer and a buffer layer on the rear electrode layer and divided into a plurality of portions by a second separation groove parallel to the first separation groove, a translucent electrode layer on the buffer layer and divided into a plurality of portions by a third separation groove parallel to the first and second separation grooves, a light transmission unit exposing a portion of the substrate and defined by an opening through the rear electrode layer, the light absorption layer, the buffer layer, and the translucent electrode layer, and first and second insulation grooves at respective first and second sides of the light transmission unit, the first and second insulation grooves being perpendicular to the first through third separation grooves.

Abstract: Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.

Abstract: A method for forming a reduced conductive area in transparent conductive. The method includes providing a transparent, electrically conductive, chemically reducible material. A reducing atmosphere is provided and concentrated electromagnetic energy from an energy source is directed toward a portion of the transparent, electrically conductive, chemically reducible material to form a reduced conductive area. The reduced conductive area has greater electrical conductivity than the transparent, electrically conductive, chemically reducible material. A thin film article and photovoltaic module are also disclosed.

Abstract: An organic light-emitting display includes a substrate including a pixel region and a transistor region; a first transparent electrode and a second transparent electrode formed over the pixel region and the transistor region of the substrate, respectively; a gate electrode formed over the second transparent electrode; a gate insulating film formed over the gate electrode; a semiconductor layer formed over the gate insulating film; a source and drain electrode having an end connected to the semiconductor layer and the other end connected to the first transparent electrode; a pixel defining layer disposed over the source and drain electrode to cover the source and drain electrode and having an opening disposed over the first transparent electrode; a light-blocking layer formed over the pixel defining layer; and an organic light-emitting layer formed over the first transparent electrode.

Abstract: A photovoltaic cell is fabricated onto a polyimide film using an unbalanced RF magnetron sputtering process. The sputtering process includes the addition of 0.05% to 0.5% oxygen to an inert gas stream. Portions of the photovoltaic cell are exposed to an elevated temperature CdCl2 treatment which is at or below the glass transition temperature of the polyimide film.

Abstract: Illustrative embodiments of hybrid transparent conducting materials and applications thereof are disclosed. In one illustrative embodiment, a hybrid transparent conducting material may include a polycrystalline film and a plurality of conductive nanostructures randomly dispersed in the polycrystalline film. In another illustrative embodiment, a photovoltaic cell may include a transparent electrode comprising polycrystalline graphene that is percolation doped with metallic nanowires, where the metallic nanowires do not form a percolation network for charge carriers across the transparent electrode.

Abstract: A donor silicon wafer may be bonded to a substrate and a lamina cleaved from the donor wafer. A photovoltaic cell may be formed from the lamina bonded to the substrate. An intermetal stack is described that is optimized for use in such a cell. The intermetal stack may include a transparent conductive oxide layer serving as a quarter-wave plate, a low resistance layer, an adhesion layer to help adhesion to the receiver element, and may also include a barrier layer to prevent or impede unwanted diffusion within the stack.

Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Abstract: A display device and a fabricating method of the same are disclosed.

Abstract: The present invention relates to a method for fabricating a thin film formed with a uniform single-size monolayer of spherical AZO nanoparticles. Because of its own advantages in cost and transparency, Al-doped ZnO (AZO) transparent conductive film is becoming the most commonly used transparent conducting oxide (TCO) replacement for solar cells. In this invention, a colloidal chemical means is adopted for enabling a chemical reaction between metal salts, water, and polyhydric alcohols at a room-temperature environment, and thereby, a process for fabricating spherical AZO nanoparticles in a diameter ranged between 100 nm to 400 nm according to different parameter configurations can be achieved while controlling the actual Al/Zn ratio to be ranged between 0.1% to 3%. In addition, a dip coating means is adopted for densely distributing the spherical AZO nanoparticles on a substrate into a monolayer close-packed structure.