Abstract: A semiconductor structure includes a semiconductor structure includes a semiconductor die, an insulating encapsulation, a passivation layer and conductive elements. The semiconductor die includes a sensor device and a semiconductor substrate with a first region and a second region adjacent to the first region, and the sensor device is embedded in the semiconductor substrate within the first region. The insulating encapsulation laterally encapsulates the semiconductor die and covers a sidewall of the semiconductor die. The passivation layer is located on the semiconductor die, wherein a recess penetrates through the passivation layer over the first region and is overlapped with the sensor device. The conductive elements are located on the passivation layer over the second region and are electrically connected to the semiconductor die, wherein the passivation layer is between the insulating encapsulation and the conductive elements.

Abstract: The display device includes the first light-emitting element, a second light-emitting element, a first color filter through which light from the first light-emitting element passes, and a second color filter through which the light from the second light-emitting element passes. The relative positional relationship between the center of the first light-emitting element and the center of the first color filter is different from the relative positional relationship between the center of the second light-emitting element and the center of the second color filter.

Abstract: Image sensing devices are disclosed. In an aspect, an image sensing device may include an array of sensor pixels to detect incident light to output pixel signals indicative of an image of the incident light, color filters respectively formed over the sensor pixels to filter light incident to the sensor pixels, respectively, and one or more optical grid structures disposed between adjacent color filters. Each of the one or more optical grid structures may include an air layer formed between the color filters and a first capping film structured to cover the air layer and having an open area formed over the air layer and connected to an outside of the color filters.

Abstract: An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, and a passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate. A method for forming an image sensor with passivated full deep-trench isolation includes forming trenches in a semiconductor substrate, filling the trenches with a sacrificial material, forming a plurality of photodiode regions, forming a circuit layer, thinning the semiconductor substrate, and removing the sacrificial material. A method for reducing noise in an image sensor includes removing material from a semiconductor substrate to form a plurality of trenches that extend from a front surface toward a back surface, and depositing a dielectric material onto the back surface and into the plurality of trenches through a back opening of each trench.

Abstract: A method for manufacturing a light emitting element includes: forming a first electrode; forming a hole transport region on a first electrode; forming an emission layer on the hole transport region; forming an electron transport region on the emission layer; and forming a second electrode on the electron transport region, wherein the forming of the emission layer includes providing a quantum dot composition containing a quantum dot and a ligand bonded to a surface of the quantum dot, to form a preliminary emission layer; and increasing the layer density of the preliminary emission layer by about 5% or greater, thereby improving a luminous efficiency of the light emitting element.

Abstract: Disclosed are an antireflective lens for infrared rays that eliminates wavelengths in an infrared region to thus improve an antireflective effect and a method of manufacturing the same. The antireflective lens for infrared rays may be an antireflective lens used in an infrared band. The antireflective lens includes a lens base part including a base refractive material having a refractive index of about 3.0 or greater and an antireflective coating part formed on a front surface of the lens base part.

Abstract: Disclosed herein are techniques for aligning a collimator assembly with an array of LEDs and apparatuses formed using the disclosed techniques. According to certain embodiments, a display projector includes a display device and a collimator assembly. The display device includes a backplane including a first plurality of features. The display device further includes a plurality of dies. Each die of the plurality of dies comprises a plurality of light emitting diodes and is bonded to the backplane. The collimator assembly includes a plurality of lenses and a second plurality of features. The collimator assembly is attached to the display device through coupling the first plurality of features with the second plurality of features such that the plurality of dies are aligned with the plurality of lenses.

Abstract: A device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first metal mirror disposed on the substrate. The multispectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.

Abstract: A display panel may include a first display substrate and a second display substrate on the first display substrate. The second display substrate may include a plurality of pixel regions and a peripheral region adjacent to the pixel regions. The second display substrate may include a first color control pattern configured to emit light of a first color, a second color control pattern spaced apart from the first color control pattern in a first direction and configured to emit light of a second color different from the first color, and first and second light-blocking patterns in the peripheral region between the first and second color control patterns. The first and second light-blocking patterns may be spaced apart from each other, in a second direction crossing the first direction, to define a gap region.

Abstract: Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

Abstract: Provided is an image sensor including a light sensor array including a plurality of light sensors configured to detect an incident light and convert the incident light into an electrical signal, the plurality of light sensors being are provided in a plurality of pixels, a transparent layer provided on the light sensor array, a color separation element provided on the transparent layer and configured to separate the incident light into light of a plurality of colors based on a wavelength band, and a focusing element including a nanostructure in a region corresponding to at least one pixel among the plurality of pixels and configured to perform auto focusing.

Abstract: A multi-group lens assembly (10), a camera module (100), and an electronic device (200) therefore are provided. The multi-group lens assembly (10) includes at least two group units (11 and 12). At least a first gap (15) is provided between the at least two adjacent group units (11 and 12) to compensate a difference between the multi-group lens assembly (10) and an optical design system, thus allowing an optical system of the multi-group lens assembly conform to the optical design system of the present invention.

Abstract: A semiconductor device may include first and second sub chips stacked sequentially and a through contact electrically connecting the first and second sub chips to each other. Each of the first and second sub chips may include a substrate and a plurality of interconnection lines, which are interposed between the substrates. The interconnection lines of the second sub chip may include first and second interconnection lines having first and second openings, respectively, which are horizontally offset from each other. The through contact may be extended from the substrate of the second sub chip toward the first sub chip and may include an auxiliary contact, which is extended toward the first sub chip through the first and second openings and has a bottom surface higher than a top surface of the uppermost one of the interconnection lines of the first sub chip.

Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.

Abstract: The present disclosure provides an optoelectronic module. In one aspect, the optoelectronic module includes an insertion member including a housing insert and an imager disposed in the housing insert, and a receiving member including an interposer, a housing disposed on the interposer, and an optoelectronic device electrically connected to said interposer. The housing of the receiving member is configured to engage and receive the housing insert of the insertion member. The optoelectronic device of the receiving member is configured to align with the imager of the insertion member.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: There is provided an image pickup element including a non-planar layer having a non-planar light incident surface in a light receiving region, and a microlens of an inorganic material which is provided on a side of the light incident surface of the non-planar layer, and collects incident light.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.

Abstract: A display device includes: a substrate; a display area in which a plurality of pixels are arranged over the substrate; and a transmission area arranged inside the display area, where the transmission area is provided to overlap a component below the substrate, and a transparent organic layer including siloxane is arranged in the transmission area.

Abstract: Folded cameras and dual folded-upright cameras that reduce a mobile electronic device and specifically a smartphone bump footprint and height. In some examples, the bump footprint is reduced by reducing the height of a back focal plane section of the folded camera. In some examples, the bump footprint is reduced by reducing the height of a back focal plane section and a lens subsection of the folded camera.

Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: The present technology relates to a solid-state imaging device capable of inhibiting peeling of a fixed charge film while inhibiting dark current, a method of manufacturing the same, and an electronic device. A solid-state imaging device provided with a semiconductor substrate in which a plurality of photodiodes is formed, a groove portion formed in a depth direction from a light incident side for forming an element separating unit between adjacent photoelectric conversion elements on the semiconductor substrate, a first fixed charge film formed so as to cover a surface of a planar portion on the light incident side of the semiconductor substrate, and a second fixed charge film formed so as to cover an inner wall surface of the groove portion formed on the semiconductor substrate is provided. The present technology is applicable to a backside illumination CMOS image sensor, for example.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Abstract: A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

Abstract: The camera module with improved heat dissipation function include a base, a photosensitive chip, a circuit board; and a heat conducting sheet. Wherein the base comprises a first surface and a second surface opposite to the first surface. A portion of the first surface is recessed to form a third surface between the first surface and the second surface, and to form a plurality of sidewalls connecting the first surface and the third surface, the third surface and the plurality of sidewalls cooperatively define a slot. Wherein the photosensitive chip is fixed on the third surface and accommodated in the slot; the circuit board is fixed on the first surface. A gap is defined between the circuit board and the photosensitive chip; the heat conducting sheet is disposed in the gap.

Abstract: A method forming an image sensor includes: providing a substrate including a plurality of sensing portions; forming a color filter layer on the substrate; forming a micro-lens material layer on the color filter layer; and forming a hard mask pattern on the micro-lens material layer, wherein the hard mask pattern has a first gap and a second gap larger than the first gap. The method includes reflowing the hard mask pattern into a plurality of dome shapes; transferring the plurality of dome shapes into the micro-lens material layer to form a plurality of micro-lenses; and forming a top film conformally on the plurality of micro-lenses.

Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.

Abstract: A sensor and a 3-D position detection system are disclosed. In an embodiment a sensor includes at least one sensor chip configured to detect radiation, at least one carrier on which the sensor chip is mounted and a cast body that is transmissive for the radiation and that completely covers the sensor chip, wherein a centroid shift of the sensor chip amounts to at most 0.04 mrad at an angle of incidence of up to at least 60°, wherein the cast body comprises a light inlet side that faces away from the sensor chip, and the light inlet side comprises side walls bounding it on all sides, wherein the side walls are smooth, planar and transmissive for the radiation, wherein a free field-of-view on the light inlet side has an aperture angle of at least 140°, and wherein the cast body protrudes in a direction away from the sensor chip beyond a bond wire.

Abstract: The present technology relates to a solid state imaging sensor that is possible to suppress the reflection of incident light with a wide wavelength band. A reflectance adjusting layer is provided on the substrate in an incident direction of the incident light with respect to the substrate such as Si and configured to adjust reflection of the incident light on the substrate. The reflectance adjusting layer includes a first layer formed on the substrate and a second layer formed on the first layer. The first layer includes a concavo-convex structure provided on the substrate and a material which is filled into a concave portion of the concavo-convex structure and has a refractive index lower than that of the substrate, and the second layer includes a material having a refractive index lower than that of the first layer. It is possible to reduce the reflection on the substrate such as Si by using the principle of the interference of the thin film. Such a technology can be applied to solid state imaging sensors.

Abstract: An array-type ultrasonic sensor includes a semiconductor substrate, a first sensing array, and a second sensing array. The first sensing array includes a plurality of first ultrasonic sensing units. Each of the first ultrasonic sensing units includes a first positive electrode and a first negative electrode. The first positive electrodes are connected in series with each other, and the first negative electrodes are connected in series with each other. The second sensing array includes a plurality of second ultrasonic sensing units. Each of the second ultrasonic sensing units includes a second positive electrode and a second negative electrode. The second positive electrodes are connected in series with each other, and the second negative electrodes are connected in series with each other. One of the first sensing array and the second sensing array is configured to transmit ultrasonic waves, and the other is configured to receive reflected ultrasonic waves.

Abstract: Various examples of out-of-plane multicolor waveguide holography systems, methods of manufacture, and methods of use are described herein. In some examples, a multicolor waveguide holography system includes a planar waveguide to convey optical radiation between a grating coupler and a metasurface hologram. The grating coupler may be configured to couple out-of-plane optical radiation of three different color incident at three different angles into the planar waveguide. The combined multicolor optical radiation may be conveyed by the waveguide to the metasurface hologram. The metasurface hologram may diffractively decouple the three colors of optical radiation for off-plane propagation to form a multicolor holographic image in free space.

Abstract: A light source device includes: a laser diode; a substrate directly or indirectly supporting the laser diode; and a cap secured to the substrate and covering the laser diode. The cap includes a first glass portion configured to transmit laser light that is emitted from the laser diode, and a second glass portion. At least one of the first glass portion and the second glass portion includes an alkaline glass region. The first glass portion and the second glass portion are bonded together via an electrically conductive layer that is in contact with the alkaline glass region.

Abstract: A near-to-eye display apparatus includes a plurality of pixel island groups. Each pixel island group includes a plurality of pixel islands. Each pixel island corresponds to a micro lens. By adjusting a position of the micro lens relative to the corresponding pixel island in the pixel island group, on a plane where the micro lenses are located, or a position, of the pixel island in the pixel island group relative to the corresponding micro lens, on a plane where the pixel islands are located, imaging points in the imaging regions formed by at least part of different pixel islands in the pixel island groups do not overlap with each other and are arranged alternately.

Abstract: A multi-group lens assembly (10), a camera module (100), and an electronic device (200) therefore are provided. The multi-group lens assembly (10) includes at least two group units (11 and 12). At least a first gap (15) is provided between the at least two adjacent group units (11 and 12) to compensate a difference between the multi-group lens assembly (10) and an optical design system, thus allowing an optical system of the multi-group lens assembly conform to the optical design system of the present invention.

Abstract: An image sensor device includes a semiconductor device, a plurality of photo sensitive regions, a dielectric layer, a grid structure, and a plurality of convex dielectric lenses. The plurality of photo sensitive regions are in the semiconductor substrate. The dielectric layer is on a backside surface of the semiconductor substrate facing away from the plurality of photo sensitive regions. The grid structure is on a backside surface of the dielectric layer facing away from the semiconductor substrate. The grid structure includes a plurality of grid lines spaced from each other. The plurality of convex dielectric lenses are alternately arranged with the plurality of grid lines of the grid structure on the backside surface of the dielectric layer. Apexes of the plurality of convex dielectric lenses are lower than top ends of the plurality of grid lines of the grid structure.

Abstract: Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Abstract: A fingerprint sensor includes a substrate, a sensor pixel disposed on the substrate and including a light sensing element through which a sensing current flows according to an amount of incident light, a light-blocking conductive layer disposed on the sensor pixel and including a plurality of holes, a first fingerprint pad disposed on the substrate, and a conductive connector connected to the first fingerprint pad and to which a predetermined voltage is applied. The light-blocking conductive layer is electrically connected to the conductive connector.

Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes a substrate, a first photoelectric conversion region in the substrate, a second photoelectric conversion region in the substrate, a trench between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate, a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion regions, and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

Abstract: A spectroscopic module includes a support body having a bottom wall portion and a side wall portion surrounding a space on one side of the bottom wall portion, a spectroscopic portion provided on the one side of the bottom wall portion and having a plurality of grating grooves, a photodetector attached to the side wall portion so as to face the spectroscopic portion via the space and having a plurality of photodetection channels, a plurality of first terminals provided on a surface of the support body on a side opposite to the space so as to be disposed along the surface of the support body and electrically connected to the photodetector, and a wiring unit having a plurality of second terminals respectively facing the plurality of first terminals and respectively joined to the plurality of first terminals and a plurality of third terminals respectively and electrically connected to the plurality of second terminals.

Abstract: A photoelectric conversion apparatus is provided. The apparatus comprises a pixel region in which a plurality of pixels each including a photoelectric conversion portion and a charge holding portion formed in a substrate are arranged, and a peripheral region. Above the substrate, an electrically conductive layer including an electrode pattern for transferring charges in the photoelectric conversion portion to the charge holding portion, a wiring layer including a wiring pattern electrically connected to the electrode pattern, an interlayer film arranged between the wiring layer and the substrate, a metal layer arranged between the interlayer film and the substrate and arranged so as to cover at least the charge holding portion and the electrode pattern are provided. In the peripheral region, the metal layer covers at least an upper surface of an electrically conductive pattern included in the electrically conductive layer.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodetectors with buried airgap mirror reflectors. The structure includes a photodetector and at least one airgap in a substrate under the photodetector.

Abstract: A solar cell according to an embodiment of the present invention includes a semiconductor substrate; a first conductive type region positioned at or on the semiconductor substrate; and a first electrode electrically connected to the first conductive type region. The first electrode includes a plurality of first finger lines formed in a first direction and parallel to each other; and a plurality of first bus bars including a plurality of first pad portions positioned in a second direction intersecting with the first direction. The plurality of first finger lines include a contact portion which is in direct contact with the first conductive type region. The plurality of first pad portions have a different material, a composition, or a multi-layered structure that is different from that of the plurality of first finger lines, and are spaced apart from the first conductive type region.

Abstract: Image sensor devices including photo detectors located relative to one another to form an array, color filters located above the photo detectors, respectively, to filter incident light that are received by the photo detectors, respectively, a first grid structure including a first material having refractive index lower than a refractive index of the color filters and disposed between color filters adjacent to each other, and a second grid structure including a second material having refractive index lower than the refractive index of the color filters and disposed inside the first grid structure.

Abstract: A method of forming a semiconductor device includes: providing a substrate, wherein a buffer layer, a channel layer, and a barrier layer are sequentially formed on the substrate; forming a doped compound semiconductor layer on a portion of the barrier layer; forming a first etch stop layer on the doped compound semiconductor layer; forming a second etch stop layer on the first etch stop layer; forming a first dielectric layer on the second etch stop layer; forming an etch protection layer on the first dielectric layer; performing a first etch process to form a recess in the first dielectric layer; performing a second etch process to form an opening exposing a portion of the second etch stop layer; performing a removal process to remove remaining portions of the etch protection layer on the first dielectric layer; and forming a gate metal layer to fill the opening.

Abstract: A solid-state image sensor with pixels each including a photoelectric conversion portion made of a second type doped semiconductor layer and a semiconductor material layer, and the second type doped semiconductor layer contacts a first type doped semiconductor substrate. An anti-reflective portion is provided with multiple micro pillars on the semiconductor material layer, wherein micro pillars are isolated by recesses extending into the photoelectric conversion portion, and the refractive index of the micro pillar gradually decreases from bottom to top and is smaller than the refractive index of the light-receiving portion of the semiconductor material layer.

Abstract: The technology disclosed in this patent document can be implemented in embodiments to provide an image sensor that includes a first phase difference detection pixel having a light receiving region shifted by a first displacement distance, and a second phase difference detection pixel having a light receiving region shifted by a second displacement distance in a second direction opposite to the first direction, wherein the first and second phase difference detection pixels are structured to detect phase difference information of incident light for controlling focusing of incident light at the imaging pixels for image sensing by the imaging pixels, and each of the first phase difference detection pixel and the second phase difference detection pixel includes an antireflection layer structured to partially cover a microlens, in the light receiving region.