Abstract: Optical devices and methods include a first waveguide having a first surface and a second waveguide including a second surface. The first waveguide is at a fixed position relative to the second waveguide with the first surface at least partly facing the second surface, and the first surface includes a first positioning element. The first positioning element is a NanoImprint Lithography (NIL) structure. The optical device further includes an adhesive arranged for attaching the first surface to the second surface, where the first positioning element is arranged to control a position of the adhesive. The first positioning element includes a philic region adapted to attract the adhesive, or a phobic region adapted to repel the adhesive.

Abstract: In an image sensor having a plurality of pixels including focus detection pixels that outputs signals from which a pair of focus detection signals having parallax can be obtained based on light flux passing through different pupil regions of an imaging optical system, each pixel comprises: at least one photoelectric conversion unit; and a microlens optical system provided on a side on which light is incident with respect to the photoelectric conversion unit, wherein a shape of a principal curved surface of the microlens optical system is such that a first curvature of the microlens optical system at a first distance from an optical axis of the microlens optical system is larger than a second curvature of the microlens optical system at a second distance which is farther from the optical axis of the microlens optical system than the first distance.

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

Abstract: Disclosed herein is a technique of configuring flexible photovoltaic tracker systems with high damping and low angle stow positions. Under dynamic environmental loads implementing a high amount of damping (e.g., greater than 25% of critical damping, greater than 50% of critical damping) or a very high amount of damping (e.g., 100% or greater of critical damping, infinite damping) enables the flexible tracker system to prevent problematic aeroelastic behaviors while positioned in a low stow angle. The disclosed technique is further applied to a prototyping process during wind tunnel testing.

Abstract: A touch screen operator control and/or display device (1), for a motor vehicle has a display element (2). At least one graphics element (3) can be represented on the display element (2) by visible light radiation. A sensor (4) detects the representation of the graphics element (3). The sensor (4) detects in particular, changes in brightness on the display element (2).

Abstract: A multilayer light-filtering structure includes a substrate, a light-filtering layer and a patterned light-blocking layer. The light-filtering layer is disposed on a surface of the substrate, in which the light-filtering layer has a first surface away from the substrate, and the light-filtering layer includes a plurality of high refractive index films and a plurality of low refractive index films. The low refractive index films are correspondingly overlapped with the high refractive index films. The patterned light-blocking layer is disposed on the first surface and includes a plurality of metal material films and a plurality of dielectric films. The dielectric films are correspondingly overlapped with the metal material films.

Abstract: An ultraviolet light array module has a substrate, multiple ultraviolet light chips, and an amorphous silicon concentrator. The substrate has a concave. The ultraviolet light chips are arranged in an array in the concave of the substrate. The amorphous silicon concentrator covers on the concave and includes a light-transmitting base and multiple continuous light-concentrating protrusions. The optical axis of each light-concentrating protrusion aligns with the light-emitting axis of the corresponding ultraviolet light chip to generate ultraviolet light with a specific light-emitting angle. Since the light-concentrating protrusions are integrally formed on the light-transmitting base, the optical axes of the light-concentrating protrusions are close to each other and align with the light-emitting axes of the ultraviolet light chips underneath.

Abstract: A unique multiband spectrum solar cell implemented using a cross dichroic prism with the capability to separate incident solar radiation into three visible or infrared spectral components or bands using two dichroic filters is described. Inexpensive thin film solar cells can be deposited directly onto the prism outer surfaces acting as a substrate. The operational spectrum combined by three cells can be designed to cover most of the visible light and infrared (300 nm to 1100 nm) regions providing maximized power output. Manufacture of an elongated (length extended) version is described to increase photovoltaic surface area and create a sub module with space efficient packing into an array supporting a flat panel form factor. Finally, a complete solar panel system is described based upon an array of sub modules combined with power conversion electronics.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a semiconductor layer having one surface serving as a light incident surface and another surface opposed to the one surface, and having a light reception region and a peripheral region in the one surface, the light reception region in which a plurality of photoelectric converters that performs photoelectric conversion on incident light is arranged, and the peripheral region provided around the light reception region; a through via that penetrates between the one surface and the other surface; a first coupling section that is provided on the peripheral region on the one surface side, and has a width wider than the through via; a second coupling section that is provided on the peripheral region on the one surface side, and is used for coupling to an external substrate; a first semiconductor element including a coupling wiring line that electrically couples the first coupling section, the second coupling section, and the through via

Abstract: A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors, a plurality of deep trench isolation (DTI) structures, and a plurality of isolation structures. The transistors are over a front-side surface of the semiconductor substrate. The DTI structures extend a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate. The isolation structures extend a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. From a plan view, each of the plurality of isolation structures has a triangular profile at the backside surface of the semiconductor substrate.

Abstract: A method and system including: an aerial vehicle including: a first camera comprising a first sensor having at least red, green, and blue color channels, where the blue color channel is sensitive to near-infrared (NIR) wavelengths; a first optical filter disposed in front of the first sensor, wherein the first optical filter is configured to block wavelengths below green, between red and NIR, and longer wavelength NIR; a processor having addressable memory in communication with the first camera, where the processor is configured to: capture at least one image of vegetation from the first camera; provide red, green, and NIR color channels from the captured image from the first camera; and determine at least one vegetative index based on the provided red, green, and NIR color channels.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus. The display substrate has a fingerprint identification region. The display substrate includes a base substrate; a display unit on the base substrate and including a display thin film transistor and a light-emitting device, a second electrode of the display thin film transistor being coupled to a first electrode of the light-emitting device; and a fingerprint identification unit at a gap between adjacent display units in the fingerprint identification region and including a fingerprint identification transistor and a photosensitive device, a first electrode of the fingerprint identification transistor being coupled to a second electrode of the photosensitive device. The display substrate further includes a gate insulating layer on a side of an active layer of the display thin film transistor and an active layer of the fingerprint identification transistor distal to the base substrate.

Abstract: A micro light-emitting diode (?LED) chip includes a first electrode layer, a second semiconductor layer located on a surface of the first electrode layer, and a first semiconductor layer located on a side of the second semiconductor layer away from the first electrode layer, and a light-emitting layer located between the first semiconductor layer and the second semiconductor layer. The second semiconductor is electrically connected to the first electrode layer, and is configured to transmit first carriers. The first semiconductor layer is configured to transmit second carriers. The light-emitting layer is configured to be excited to emit light upon combination of the first carriers and the second carriers. A surface of the first semiconductor layer away from the light-emitting layer is a concave-convex microstructure, and convex portions of the concave-convex microstructure are configured to receive an electron beam.

Abstract: Provided is an imaging device that includes an imaging unit that performs an imaging operation, a data generator that generates first power supply voltage data corresponding to a first power supply voltage and a flag generation section that generates a flag signal for the first power supply voltage by comparing the first power supply voltage data and first reference data. The first power supply voltage is supplied to the imaging unit.

Abstract: To provide a solid-state imaging device capable of further improving quality. Provided is a solid-state imaging device including: a first semiconductor element having a first semiconductor layer provided with a first through via and a photoelectric conversion unit configured to photoelectrically convert light that has been incident, a connection part that is wider than the first through via and is provided outside a region where the photoelectric conversion unit is provided on a surface of the first semiconductor layer on a side for receiving the light, connection wiring provided on the surface and configured to connect the first through via and the connection part, and a first passivation layer formed on the surface side; a second semiconductor element mounted on the first semiconductor element by the connection part; and a first guard ring formed on an outer peripheral portion of the first semiconductor element to surround the first semiconductor element.

Abstract: This invention relates to a sensor and sensor platform, for an autonomous system. The sensor and its platform sense, perform signal or data processing, and make the decision locally at the point of sensing. More specifically, the sensor along with its platform simulates the human-like or human capacity to make decisions by combing the data from several sensors that detect different data sets, and combine them in a series of data processes that allows autonomous decisions to be made. Additionally, the sensor platform combines multiple sensors in one metasensor with the functionality of multiple sensors placed on a common carrier or platform.

Abstract: An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Abstract: A burst-mode optical receiver for an optical line terminal (OLT) of a passive optical network (PON) comprises a variable optical attenuator (VOA), a photodiode (PD) which may be a pin-PD or an APD, a transimpedance amplifier (TIA), and a feedback/control circuit for adjusting a bias voltage of the VOA in response to a burst-mode optical input signal level, to provide an attenuated optical output signal to the PD having a narrower dynamic range. Providing signal level adjustment in the optical domain mitigates the requirement for a burst-mode TIA with a large dynamic range and provides for fast switching. The burst-mode optical receiver may comprise a waveguide configuration, wherein a first electro-absorption modulator (EAM) is operable as the VOA and a second EAM is operable as the photodiode. A monolithically integrated electro-photonic circuit comprising the VOA, PD, TIA and feedback/control circuit may be provided using InP-based semiconductor materials.

Abstract: A transmission module includes a flexible printed wiring board including a signal line, a connector mounted on the flexible printed wiring board, and a reinforcing member disposed at a position opposing the connector with the flexible printed wiring board therebetween. The signal line includes a pad connected to a terminal of the connector. The reinforcing member includes a first portion disposed in a region including at least part of the pad as viewed in a direction perpendicular to a main surface of the flexible printed wiring board, and a second portion disposed around the first portion as viewed in the direction perpendicular to the main surface. A member constituting the first portion is a member having a nature that reduces a characteristic impedance of the pad more than a member constituting the second portion does.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a semiconductor substrate having sidewalls that form one or more trenches. The one or more trenches are disposed along opposing sides of a photodiode and vertically extend from an upper surface of the semiconductor substrate to within the semiconductor substrate. A doped region is arranged along the upper surface of the semiconductor substrate and along opposing sides of the photodiode. A first dielectric lines the sidewalls of the semiconductor substrate and the upper surface of the semiconductor substrate. A second dielectric lines sidewalls and an upper surface of the first dielectric. The doped region has a width laterally between a side of the photodiode and a side of the first dielectric. The width of the doped region varies at different heights along the side of the photodiode.

Abstract: A circuit board assembly with a fully embedded photosensitive chip which does not require an increase in board width for the re-routing of wires around the photosensitive chip includes a circuit board and a reinforced plate at a lower elevation which is connected to the circuit board. The circuit board defines a through hole and a plurality of conductive lines. The conductive lines or the portion of them which are cut off by the location of the through hole accommodating the chip are repeated by connecting lines carried on the reinforced plate, the plurality of connecting lines connects to and continues the conductive lines which are cut off by the hole.

Abstract: A camera module with sticky epoxy and method for dislodging particles from a corresponding IR filter. Particles, formed during manufacture or use of the camera, may accumulate in the camera (e.g., on an infrared filter) causing blemishes in camera images. A sticky epoxy with characteristics for attracting and capturing particles is located in the camera. The epoxy may be located in a gap between a substrate and an outside edge of an infrared filter coupled to the substrate. The epoxy and the gap may surround the infrared filter and the epoxy may also be located on other surfaces of the camera. A process for loosening particles from the infrared filter includes driving an actuator that moves the substrate/infrared filter assembly (perhaps striking a base assembly) to loosen the particles from the infrared filter such that the particles are moved to, and trapped by, the epoxy.

Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.

Abstract: A method for manufacturing a semiconductor optical device for a LIDAR sensor system for a vehicle includes (a) forming a plurality of microlens structures at respective first locations on a first major surface of respective first and second semiconductor wafers. The method includes (b) forming a plurality of notch structures at respective second locations on a second major surface of the respective first and second semiconductor wafers, wherein the respective second locations on the second major surface are substantially opposite the respective first locations on the first major surface. The method includes (c) bonding the second major surface of the first semiconductor wafer to the second major surface of the second semiconductor wafer to form a semiconductor wafer pair. The method includes (d) dicing the semiconductor wafer pair to segment the semiconductor wafer pair into a plurality of individual semiconductor optical devices.

Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

Abstract: The present disclosure is directed to methods and compositions comprising photopolymerizable compositions for use in additive manufacturing, particularly for digital light processing, stereolithography or continuous liquid interface processing.

Abstract: The present disclosure discloses a microscopic non-destructive measurement method of a microstructure linewidth based on a translation difference, based on a conventional microscopic imaging method, a high-precision displacement platform is used to move a to-be-measured sample, one microscopic image of the sample is acquired before and after the displacement separately, subtraction is performed on the two image to obtain a differential image, a light intensity distribution function of the differential image is derived, data fitting is performed on the differential image, and a high-precision sample linewidth measurement result is obtained by using the characteristic of a high differential pulse positioning resolution.

Abstract: An exemplary imaging device according to the present disclosure includes: an imaging region including a plurality of pixels; a peripheral region located outside of the imaging region; and a blockade region located between the imaging region and the peripheral region. Each of the plurality of pixels includes a photoelectric conversion layer, a pixel electrode to collect a charge generated in the photoelectric conversion layer, and a first doped region electrically connected to the pixel electrode. In the peripheral region, a circuit to drive the plurality of pixels is provided. The blockade region includes a second doped region of a first conductivity type located between the imaging region and the peripheral region and a plurality of first contact plugs connected to the second doped region.

Abstract: A method, apparatus, and system that provides a holographic layer as a micro-lens array and/or a color filter array in an imager. The method of writing the holographic layer results in overlapping areas in the hologram for corresponding adjacent pixels in the imager which increases collection of light at the pixels, thereby increasing quantum efficiency.

Abstract: An image sensing device may include a pixel array. The pixel array includes a sensing region including a plurality of unit pixels, each unit pixel configured to detect incident light to generate photocharge indicative of the detected incident light, a bias field region doped with impurities and disposed along an edge of the sensing region and a contact portion connected to the bias field region to apply a bias voltage to the bias field region to move the photocharge in the sensing region.

Abstract: Various embodiments of the present disclosure are directed towards a pixel sensor. The pixel sensor includes a substrate having a front-side opposite a back-side. An image sensor element comprises an active layer disposed within the substrate, where the active layer comprises germanium. An anti-reflective coating (ARC) structure overlies the back-side of the substrate. The ARC structure includes a first dielectric layer overlying the back-side of the substrate, a second dielectric layer overlying the first dielectric layer, and a third dielectric layer overlying the second dielectric layer. A first index of refraction of the first dielectric layer is less than a second index of refraction of the second dielectric layer, and a third index of refraction of the third dielectric layer is less than the first index of refraction.

Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Abstract: A photovoltaic cell is provided, including a substrate, a doped layer, a tunneling dielectric layer, doped conductive layers, first electrodes, and conductive transport layers. A doping concentration of the doped layer is greater than that of the substrate. The doped layer includes first doped regions, second doped regions and third doped regions. A doping concentration of each first doped region is less than that of each second doped region and that of each third doped region. The tunneling dielectric layer is disposed on the first and second doped regions. Each doped conductive layer is aligned with a first doped region and is disposed on a tunneling dielectric layer. Each first electrode is disposed on and electrically connected to the doped conductive layer. Each conductive transport layer is aligned with a second doped region and is disposed on the tunneling dielectric layer.

Abstract: A semiconductor device includes: a semiconductor element having an element main surface and first and second electrodes arranged on the element main surface; a first lead mounting the semiconductor element thereon; a second lead electrically connected to the first electrode; a third lead electrically connected to the second electrode; first connecting portions bonded to the first electrode and the second lead; and a sealing resin covering the semiconductor element, wherein the sealing resin includes a resin main surface facing the same side as the element main surface and a resin side surface connected to the resin main surface, the second lead includes a portion exposed from the sealing resin, the third lead includes a portion exposed from the sealing resin, and the exposed portion of the second lead includes a portion located on a side of the resin main surface with respect to the exposed portion of the third lead.

Abstract: Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a first pixel configured to sense first wavelength light, and a second pixel configured to sense second wavelength light; and a color separating lens array including a first wavelength light condensing region in which the first wavelength light is condensed onto the first pixel, wherein an area of the first wavelength light condensing region is greater than an area of the first pixel, and a distance between the sensor substrate and the color separating lens array is less than a focal distance of the first wavelength light condensing region with respect to the first wavelength light.

Abstract: A device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first metal mirror disposed on the substrate. The multispectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.

Abstract: An image sensing device for preventing a crosstalk path is disclosed. The image sensing device includes a substrate including a plurality of photoelectric conversion elements, each of which generates and accumulates photocharges corresponding to incident light and a plurality of lenses disposed over the substrate, and arranged to receive the incident light and to direct received incident light to the plurality of photoelectric conversion elements, wherein the plurality of lenses includes a first lens and a second lens that are arranged to contact each other and have different refractive indexes from each other.

Abstract: The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

Abstract: The present disclosure relates to a sensor package, a method of manufacturing the same, and an imaging device that can achieve downsizing and height reduction and suppress occurrence of a flare. A sensor package includes: a solid-state imaging element that generates a pixel signal by photoelectric conversion in accordance with a light amount of incident light; a circuit board electrically connected to the solid-state imaging element; a sensor package substrate that is arranged on an incident light side of the solid-state imaging element and brings the solid-state imaging element into a sealed state; and a lens formed on a lower surface of the sensor package substrate, the lower surface being located on a side of the solid-state imaging element. The present disclosure can be applied to, for example, the imaging device or the like.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.

Abstract: A camera module of an embodiment may comprise: a first holder in which a filter is mounted; a lens barrel that is provided to be vertically movable in a first direction with respect to the first holder; a lens operating device that comprises a terminal and moves the lens barrel in the first direction; a first circuit board that is disposed under the first holder and on which an image sensor is mounted; a soldering portion for electrically connecting the terminal of the lens operating device to the first circuit board; and a coupling reinforcement portion that is disposed to face the soldering portion and couples the lens operating device and the first circuit board.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

Abstract: The present disclosure relates to a semiconductor device including a semiconductor substrate. A grid structure extends from a first side of the semiconductor substrate to within the semiconductor substrate. An image sensing element is disposed within the semiconductor substrate and is laterally surrounded by the grid structure. A plurality of protrusions are arranged along the first side of the semiconductor substrate. The plurality of protrusions are disposed over the image sensing element and are laterally surrounded by the grid structure. The plurality of protrusions are substantially identical to one another and have a characteristic dimension. An inner surface of the grid structure facing the image sensing element is spaced apart from a point of one of the plurality of protrusions by a predetermined reflective length that is based on the characteristic dimension of the plurality of protrusions.

Abstract: An integrated circuit includes a semiconductor substrate, contact pads, testing pads, conductive posts, dummy posts, and a protection layer. The contact pads and the testing pads are distributed over the semiconductor substrate. The conductive posts are disposed on the contact pads. The dummy posts are disposed on the testing pads and are electrically floating. The protection layer covers the conductive posts and the dummy posts. A distance between top surfaces of the conductive posts and a top surface of the protection layer is smaller than a distance between top surfaces of the dummy posts and the top surface of the protection layer.

Abstract: Various embodiments include an engaging arrangement that may be used to attach a lens barrel to a lens carrier of a camera. In some embodiments, the engaging arrangement may restrict movement of the lens barrel relative to the lens carrier along at least an optical axis. In various examples, the engaging arrangement may include one or more grooves and one or more protrusions. For instance, a groove may be defined by the lens barrel or the lens carrier, and a protrusion may extend from the lens barrel or the lens carrier to at least partially into the groove. In some cases, the engaging arrangement may include an adhesive positioned continuously 360 degrees around the engaging arrangement between the lens barrel and the lens carrier.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels.

Abstract: Provided is an image sensor including a sensor substrate including a first pixel configured to sense light of a first wavelength, and a second pixel configured to sense light of a second wavelength, and a color separating lens array configured to concentrate the light of the first wavelength on the first pixel, and the light of the second wavelength on the second pixel, the color separating lens array including a first pixel-corresponding area corresponding to the first pixel, and a second pixel-corresponding area corresponding to the second pixel, wherein a first phase difference between the light of the first wavelength that has traveled through a center of the first pixel-corresponding area and a center of the second pixel-corresponding area is different than a second phase difference between the light of the second wavelength that has traveled through the center of the first pixel-corresponding area and the center of the second pixel-corresponding area.

Abstract: To provide a filter-based sensor capable of enhancing reliability and image quality. There is provided a solid-state imaging device including pillar structures, a filter element, a semiconductor substrate, and a photoelectric conversion element formed in the semiconductor substrate, in which the pillar structures are disposed above the semiconductor substrate in a cross-sectional view and the filter element is disposed between the semiconductor substrate and the pillar structures, and the pillar structures are configured to change a direction of an incident light.