Abstract: A first conductive pattern and a third conductive pattern are joined to each other in a junction plane, and a second conductive pattern and a fourth conductive pattern are joined to each other in the junction plane, and an insulation layer is arranged at least in one of spaces between the first conductive pattern and the second conductive pattern and between the third conductive pattern and the fourth conductive pattern.

Abstract: The present disclosure relates to the field of display technology, and provides a display substrate and a method for manufacturing the same. The display substrate includes: a light-emitting substrate comprising a plurality of light-emitting regions which are arranged in parallel with a light propagation direction, and each light-emitting region is provided with a light-emitting layer; a defining layer provided on the light-emitting substrate and including a plurality of hollow-out portions, and the hollow-out portions correspond to the light-emitting regions one to one; and a plurality of micro-lenses provided in the hollow-out portions in a one-to-one correspondence manner. With the present disclosure, it is possible to prevent damage to an underlying light-emitting substrate when forming the micro-lenses and to enhance the stability of the micro-lenses.

Abstract: A method of fabricating a solid-state image sensor, including steps of forming a second type doped semiconductor layer and a semiconductor material layer sequentially on a first type doped semiconductor substrate to constitute a photoelectric conversion portion, forming a multilayer structure on the semiconductor material layer, wherein a refractive index of the multilayer structure gradually decreases from a bottom layer to a top layer of the multilayer structure and is smaller than a refractive index of the semiconductor material layer, and performing a photolithography process to the multiplayer structure and the photoelectric conversion portion to form multiple micro pillars, wherein the micro pillars protrude from the semiconductor material layer and are isolated by recesses extending into the photoelectric conversion portion.

Abstract: A light-emitting substrate includes a base and a plurality of light-emitting units disposed on the base. A light-emitting unit includes a driving voltage terminal, and a main driver chip pad group, a plurality of main light-emitting element pad groups connected in series and at least one spare light-emitting element pad group. Both ends of the plurality of main light-emitting element pad groups are coupled to the driving voltage terminal and the main driver chip pad group. Each spare light-emitting element pad group is connected in parallel with one of the plurality of main light-emitting element pad groups to constitute a pad unit.

Abstract: The present disclosure is directed to a package, such as a wafer level chip scale package (WLCSP), with a die coupled to a central portion of a transparent substrate. The transparent substrate includes a central portion having and a peripheral portion surrounding the central portion. The package includes a conductive layer coupled to a contact of the die within the package that extends from the transparent substrate to an active surface of the package. The active surface is utilized to mount the package within an electronic device or to a printed circuit board (PCB) accordingly. The package includes a first insulating layer separating the die from the conductive layer, and a second insulating layer on the conductive layer.

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display apparatus. The display substrate has a fingerprint identification region. The display substrate includes a base substrate; a display unit on the base substrate and including a display thin film transistor and a light-emitting device, a second electrode of the display thin film transistor being coupled to a first electrode of the light-emitting device; and a fingerprint identification unit at a gap between adjacent display units in the fingerprint identification region and including a fingerprint identification transistor and a photosensitive device, a first electrode of the fingerprint identification transistor being coupled to a second electrode of the photosensitive device. The display substrate further includes a gate insulating layer on a side of an active layer of the display thin film transistor and an active layer of the fingerprint identification transistor distal to the base substrate.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes an image sensor disposed within a substrate. The substrate has sidewalls and a horizontally extending surface defining one or more trenches extending from a first surface of the substrate to within the substrate. One or more isolation structures are arranged within the one or more trenches. A doped region is arranged within the substrate laterally between sidewalls of the one or more isolation structures and the image sensor and vertically between the image sensor and the first surface of the substrate. The doped region has a higher concentration of a first dopant type than an abutting part of the substrate that extends along opposing sides of the image sensor.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: A method is provided for light shielding a charge storage device of an image sensor pixel that includes a photosensitive device and the charge storage device and a dielectric layer covering the photosensitive device and the charge storage device. The method includes performing etching of the dielectric layer to define an undercut volume beneath the dielectric layer and an access opening through the dielectric layer to the undercut volume, and performing physical vapor deposition (PVD) of a light blocking material to both: fill the undercut volume with the light blocking material to form a light blocking layer covering the charge storage device, and fill the access opening with the light blocking material to form a light blocking plug. An image sensor pixel formed by such a process, and an image sensor comprising an array of image sensor pixels, are also disclosed.

Abstract: The present disclosure relates to a solid-state imaging device, an imaging device, and an electronic apparatus that are capable of suppressing generation of flare and also suppressing coloring caused by the flare with a simple configuration. A high refractive index layer is formed between a solid-state imaging element and a transparent protective substrate (glass substrate). When reflected light caused by diffracted light generated from an on-chip lens is reflected at an interface with the high refractive index layer, the reflected light is entirely reflected at a surface layer that is a transparent protective substrate and then the reflected light is sufficiently attenuated before being incident again. Consequently, flare and coloring caused by the flare are suppressed. The present disclosure is adaptable to an imaging device.

Abstract: A camera module and a molded circuit board assembly thereof, a semi-finished product of the molded circuit board assembly, and an array camera module and a molded circuit board assembly thereof, as well as a manufacturing method and an electronic device, wherein the camera module comprises at least one optical lens, at least one back surface molded portion, at least one photosensitive element and a circuit board.

Abstract: A method, apparatus, and system that provides a holographic layer as a micro-lens array and/or a color filter array in an imager. The method of writing the holographic layer results in overlapping areas in the hologram for corresponding adjacent pixels in the imager which increases collection of light at the pixels, thereby increasing quantum efficiency.

Abstract: Provided is an image sensor including a color separating lens array. The image sensor includes a sensor substrate including a first pixel configured to sense first wavelength light, and a second pixel configured to sense second wavelength light; and a color separating lens array including a first wavelength light condensing region in which the first wavelength light is condensed onto the first pixel, wherein an area of the first wavelength light condensing region is greater than an area of the first pixel, and a distance between the sensor substrate and the color separating lens array is less than a focal distance of the first wavelength light condensing region with respect to the first wavelength light.

Abstract: A method for displaying virtual content to a user, the method includes determining an accommodation of the user's eyes. The method also includes delivering, through a first waveguide of a stack of waveguides, light rays having a first wavefront curvature based at least in part on the determined accommodation, wherein the first wavefront curvature corresponds to a focal distance of the determined accommodation. The method further includes delivering, through a second waveguide of the stack of waveguides, light rays having a second wavefront curvature, the second wavefront curvature associated with a predetermined margin of the focal distance of the determined accommodation.

Abstract: Disclosed are semiconductor packages and methods of fabricating the same. The semiconductor package comprises a molding layer, a silicon layer on the molding layer, a glass upwardly spaced apart from the silicon layer, and a connection dam coupled to the silicon layer and connecting the silicon layer to the glass. The silicon layer includes a silicon layer body, a silicon layer via extending vertically in the silicon layer body, and a micro-lens array on a top surface of the silicon layer body. A bottom surface of the silicon layer body contacts a top surface of the molding layer. The molding layer includes a molding layer body, a molding layer via that extends vertically in the molding layer body and has electrical connection with the silicon layer via, and a connection ball connected to a bottom surface of the molding layer via.

Abstract: An arrangement for determining an amount of light reaching an image sensor of a video camera is disclosed. The video camera comprises an imaging lens system guiding a beam path towards an image sensor and has an aperture plane where a variable aperture is arranged. The inventive arrangement comprises a light sensor arranged to probe light intensity continuously from a portion of the beam path, which portion is located in or near the aperture plane of the imaging lens system.

Abstract: An integrated image sensor and lens assembly may include a lens barrel, a collet, and a lens mount. The lens barrel may be coupled to the collet which is coupled to the lens mount. The lens barrel and the collet may each include a fastening structure reciprocal to each other. Alternatively, the collet and the lens mount may each include a fastening structure reciprocal to each other. The optical distance between the set of lenses and the image sensor may be tuned such that the focal plane of the lenses coincides with the image plane. The fastening structures allow the lens barrel to be adjusted relative to the lens mount in order to shift the focal plane in a direction along the optical axis to compensate for focal shifts occurring during assembly/cure and/or temperature cycling.

Abstract: A pixel-array substrate includes a semiconductor substrate, a buffer layer, and a metal annulus. The semiconductor substrate includes a first-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first-photodiode region. The buffer layer is on the back surface and has (i) a thin buffer-layer region located above the first-photodiode region and (ii) a thick buffer-layer region forming an annulus above the trench in a plane parallel to the cross-sectional plane. The metal annulus is on the buffer layer and covers the thick buffer-layer region.

Abstract: A semiconductor structure includes a semiconductor structure includes a semiconductor die, an insulating encapsulation, a passivation layer and conductive elements. The semiconductor die includes a sensor device and a semiconductor substrate with a first region and a second region adjacent to the first region, and the sensor device is embedded in the semiconductor substrate within the first region. The insulating encapsulation laterally encapsulates the semiconductor die and covers a sidewall of the semiconductor die. The passivation layer is located on the semiconductor die, wherein a recess penetrates through the passivation layer over the first region and is overlapped with the sensor device. The conductive elements are located on the passivation layer over the second region and are electrically connected to the semiconductor die, wherein the passivation layer is between the insulating encapsulation and the conductive elements.

Abstract: The display device includes the first light-emitting element, a second light-emitting element, a first color filter through which light from the first light-emitting element passes, and a second color filter through which the light from the second light-emitting element passes. The relative positional relationship between the center of the first light-emitting element and the center of the first color filter is different from the relative positional relationship between the center of the second light-emitting element and the center of the second color filter.

Abstract: Image sensing devices are disclosed. In an aspect, an image sensing device may include an array of sensor pixels to detect incident light to output pixel signals indicative of an image of the incident light, color filters respectively formed over the sensor pixels to filter light incident to the sensor pixels, respectively, and one or more optical grid structures disposed between adjacent color filters. Each of the one or more optical grid structures may include an air layer formed between the color filters and a first capping film structured to cover the air layer and having an open area formed over the air layer and connected to an outside of the color filters.

Abstract: A method for manufacturing a light emitting element includes: forming a first electrode; forming a hole transport region on a first electrode; forming an emission layer on the hole transport region; forming an electron transport region on the emission layer; and forming a second electrode on the electron transport region, wherein the forming of the emission layer includes providing a quantum dot composition containing a quantum dot and a ligand bonded to a surface of the quantum dot, to form a preliminary emission layer; and increasing the layer density of the preliminary emission layer by about 5% or greater, thereby improving a luminous efficiency of the light emitting element.

Abstract: A device may include a multispectral filter array disposed on the substrate. The multispectral filter array may include a first metal mirror disposed on the substrate. The multispectral filter may include a spacer disposed on the first metal mirror. The spacer may include a set of layers. The spacer may include a second metal mirror disposed on the spacer. The second metal mirror may be aligned with two or more sensor elements of a set of sensor elements.

Abstract: An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, and a passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate. A method for forming an image sensor with passivated full deep-trench isolation includes forming trenches in a semiconductor substrate, filling the trenches with a sacrificial material, forming a plurality of photodiode regions, forming a circuit layer, thinning the semiconductor substrate, and removing the sacrificial material. A method for reducing noise in an image sensor includes removing material from a semiconductor substrate to form a plurality of trenches that extend from a front surface toward a back surface, and depositing a dielectric material onto the back surface and into the plurality of trenches through a back opening of each trench.

Abstract: Disclosed are an antireflective lens for infrared rays that eliminates wavelengths in an infrared region to thus improve an antireflective effect and a method of manufacturing the same. The antireflective lens for infrared rays may be an antireflective lens used in an infrared band. The antireflective lens includes a lens base part including a base refractive material having a refractive index of about 3.0 or greater and an antireflective coating part formed on a front surface of the lens base part.

Abstract: Disclosed herein are techniques for aligning a collimator assembly with an array of LEDs and apparatuses formed using the disclosed techniques. According to certain embodiments, a display projector includes a display device and a collimator assembly. The display device includes a backplane including a first plurality of features. The display device further includes a plurality of dies. Each die of the plurality of dies comprises a plurality of light emitting diodes and is bonded to the backplane. The collimator assembly includes a plurality of lenses and a second plurality of features. The collimator assembly is attached to the display device through coupling the first plurality of features with the second plurality of features such that the plurality of dies are aligned with the plurality of lenses.

Abstract: A display panel may include a first display substrate and a second display substrate on the first display substrate. The second display substrate may include a plurality of pixel regions and a peripheral region adjacent to the pixel regions. The second display substrate may include a first color control pattern configured to emit light of a first color, a second color control pattern spaced apart from the first color control pattern in a first direction and configured to emit light of a second color different from the first color, and first and second light-blocking patterns in the peripheral region between the first and second color control patterns. The first and second light-blocking patterns may be spaced apart from each other, in a second direction crossing the first direction, to define a gap region.

Abstract: Provided is an image sensor including a light sensor array including a plurality of light sensors configured to detect an incident light and convert the incident light into an electrical signal, the plurality of light sensors being are provided in a plurality of pixels, a transparent layer provided on the light sensor array, a color separation element provided on the transparent layer and configured to separate the incident light into light of a plurality of colors based on a wavelength band, and a focusing element including a nanostructure in a region corresponding to at least one pixel among the plurality of pixels and configured to perform auto focusing.

Abstract: A multi-group lens assembly (10), a camera module (100), and an electronic device (200) therefore are provided. The multi-group lens assembly (10) includes at least two group units (11 and 12). At least a first gap (15) is provided between the at least two adjacent group units (11 and 12) to compensate a difference between the multi-group lens assembly (10) and an optical design system, thus allowing an optical system of the multi-group lens assembly conform to the optical design system of the present invention.

Abstract: Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.

Abstract: A semiconductor device may include first and second sub chips stacked sequentially and a through contact electrically connecting the first and second sub chips to each other. Each of the first and second sub chips may include a substrate and a plurality of interconnection lines, which are interposed between the substrates. The interconnection lines of the second sub chip may include first and second interconnection lines having first and second openings, respectively, which are horizontally offset from each other. The through contact may be extended from the substrate of the second sub chip toward the first sub chip and may include an auxiliary contact, which is extended toward the first sub chip through the first and second openings and has a bottom surface higher than a top surface of the uppermost one of the interconnection lines of the first sub chip.

Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.

Abstract: The present disclosure provides an optoelectronic module. In one aspect, the optoelectronic module includes an insertion member including a housing insert and an imager disposed in the housing insert, and a receiving member including an interposer, a housing disposed on the interposer, and an optoelectronic device electrically connected to said interposer. The housing of the receiving member is configured to engage and receive the housing insert of the insertion member. The optoelectronic device of the receiving member is configured to align with the imager of the insertion member.

Abstract: The present technology relates to a solid-state image pickup element, electronic equipment, and a semiconductor apparatus that make it possible to reduce a surface reflection in an area in which a slit is formed and improve flare characteristics. A solid-state image pickup element includes a pixel area in which a plurality of pixels is two-dimensionally arranged in a matrix, a chip mounting area in which a chip is flip-chip mounted, and a dam area that is arranged around the chip mounting area and in which one or more slits that block an outflow of a resin are formed. In the dam area, the same OCL as that in the pixel area is formed. The present technology can be applied to a solid-state image pickup element etc. in which a chip is flip-chip mounted, for example.

Abstract: There is provided an image pickup element including a non-planar layer having a non-planar light incident surface in a light receiving region, and a microlens of an inorganic material which is provided on a side of the light incident surface of the non-planar layer, and collects incident light.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.

Abstract: A display device includes: a substrate; a display area in which a plurality of pixels are arranged over the substrate; and a transmission area arranged inside the display area, where the transmission area is provided to overlap a component below the substrate, and a transparent organic layer including siloxane is arranged in the transmission area.

Abstract: Folded cameras and dual folded-upright cameras that reduce a mobile electronic device and specifically a smartphone bump footprint and height. In some examples, the bump footprint is reduced by reducing the height of a back focal plane section of the folded camera. In some examples, the bump footprint is reduced by reducing the height of a back focal plane section and a lens subsection of the folded camera.

Abstract: A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: The present technology relates to a solid-state imaging device capable of inhibiting peeling of a fixed charge film while inhibiting dark current, a method of manufacturing the same, and an electronic device. A solid-state imaging device provided with a semiconductor substrate in which a plurality of photodiodes is formed, a groove portion formed in a depth direction from a light incident side for forming an element separating unit between adjacent photoelectric conversion elements on the semiconductor substrate, a first fixed charge film formed so as to cover a surface of a planar portion on the light incident side of the semiconductor substrate, and a second fixed charge film formed so as to cover an inner wall surface of the groove portion formed on the semiconductor substrate is provided. The present technology is applicable to a backside illumination CMOS image sensor, for example.

Abstract: There is provided a solid-state imaging device including: an imaging pixel including a photoelectric conversion unit which receives incident light; and a phase difference detection pixel including the photoelectric conversion unit and a light shielding unit which shields some of the light incident to the photoelectric conversion unit, in which the imaging pixel further includes a high refractive index film which is formed on the upper side of the photoelectric conversion unit, and the phase difference detection pixel further includes a low refractive index film which is formed on the upper side of the photoelectric conversion unit.

Abstract: Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to cover the optical element; and a lens of an inorganic material provided between the substrate and the light-transmitting plate. A structure having a same strength as a strength per unit area of the lens is provided at a portion outside an effective photosensitive region where the optical element is formed, when the substrate is viewed in plan.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Abstract: A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

Abstract: The camera module with improved heat dissipation function include a base, a photosensitive chip, a circuit board; and a heat conducting sheet. Wherein the base comprises a first surface and a second surface opposite to the first surface. A portion of the first surface is recessed to form a third surface between the first surface and the second surface, and to form a plurality of sidewalls connecting the first surface and the third surface, the third surface and the plurality of sidewalls cooperatively define a slot. Wherein the photosensitive chip is fixed on the third surface and accommodated in the slot; the circuit board is fixed on the first surface. A gap is defined between the circuit board and the photosensitive chip; the heat conducting sheet is disposed in the gap.

Abstract: A method forming an image sensor includes: providing a substrate including a plurality of sensing portions; forming a color filter layer on the substrate; forming a micro-lens material layer on the color filter layer; and forming a hard mask pattern on the micro-lens material layer, wherein the hard mask pattern has a first gap and a second gap larger than the first gap. The method includes reflowing the hard mask pattern into a plurality of dome shapes; transferring the plurality of dome shapes into the micro-lens material layer to form a plurality of micro-lenses; and forming a top film conformally on the plurality of micro-lenses.

Abstract: An imaging device includes: pixels that are disposed in a row direction and a column direction and that include a first pixel and a second pixel adjacent to the first pixel along the row direction; a shield electrode located between the first pixel and the second pixel; a first shield via that extends from the shield electrode. The first pixel includes: a first photoelectric conversion layer that converts incident light to generate charge; and a first pixel electrode that collects the charge generated thereby. The second pixel includes: a second photoelectric conversion layer that converts incident light to generate charge; and a second pixel electrode that collects the charge generated thereby. The shield electrode is electrically isolated from the first pixel electrode and the second pixel electrode, and the first shield via is located between the first pixel electrode and the second pixel electrode in a plan view.