Abstract: A light-transmissive member has a first principal face, a second principal face, and side faces. The first principal face has a first portion including a center of the first principal face and a second portion between the first portion and the side face sides. The member includes a plurality of altered portions formed between the first principal face and the second principal face so that the plurality of altered portions do not appear on the first principal face, the second principal face, and the side faces. Orthogonal projections of the plurality of altered portions onto the first principal face are included in the second portion.

Abstract: Many thousands of micro-LEDs (e.g., 25 microns per side) are deposited on a substrate. Some of the LEDs are formed to emit a peak wavelength of 450 nm (blue), and some are formed to emit a peak wavelength of 490 nm (cyan). A YAG (yellow) phosphor is then deposited on the LEDs, or a remote YAG layer is used. YAG phosphor is most efficiently excited at 450 nm and has a very weak emission at 490 nm. The two types of LEDs are GaN based and can be driven at the same current. The ratio of the two types of LEDs is controlled to achieve the desired overall color emission of the LED lamp. The blue LEDs optimally excite the YAG phosphor to produce white light having blue and yellow components, and the cyan LEDs broaden the emission spectrum to increase the CRI of the lamp while improving luminous efficiency. Other embodiments are described.

Abstract: The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

Abstract: A color filter is formed using a simple manufacturing method, and bias application to a pixel separating electrode allows sensitivity in low illumination intensity to be improved. In a solid-state imaging element, in which a plurality of unit pixel sections are disposed two dimensionally on a side closer to a front surface of a semiconductor substrate or a semiconductor layer, each unit pixel section having a light receiving section for generating a signal charge by light irradiation, an adjoining unit pixel section is formed in the same color to allow for lesser alignment accuracy of the color filter. A pixel separating electrode is formed in the adjoining unit pixel section, and a signal charge is shared by bias application during low illumination intensity, thereby improving an effective photodiode area.

Abstract: A waveguide is provided on which an electromagnetic wave impinges, the electromagnetic wave having a wavelength ? included in a given interval ?? of interest centered on a ?centr. The waveguide comprises a film defining a surface on a plane on which the electromagnetic waves are apt to impinge, having a thickness in a direction substantially perpendicular to the surface, the film being realized in a material having a first refractive index; a plurality of scatterers being randomly distributed in two directions in at least a portion of the surface of the film, the scatterers having a substantially constant cross section along said substantially perpendicular direction. The scatterers are realized in a material having a second refractive index lower than the first refractive index, wherein the wavelength of the incident electromagnetic waves is comprised between 0.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

Abstract: A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract: The present application disclosed various embodiments of improved performance optically coated semiconductor devices and the methods for the manufacture thereof and includes at least one semiconductor wafer having at least a first surface, a first layer of low density, low index of refraction optical material applied to at least the first surface of the semiconductor wafer, and a multi-layer optical coating applied to the first layer of low density, low index of refraction material, the multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials.

Abstract: A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.

Abstract: A photosensitive resin composition for a color filter includes (A) a dye polymer composite including a repeating unit derived from a compound represented by the following Chemical Formula 1, wherein in Chemical Formula 1, each substituent is the same as described in the detailed description, (B) an acrylic-based photopolymerizable monomer, (C) a photopolymerization initiator, and (D) a solvent, and a color filter using the same.

Abstract: The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.

Abstract: Processes for making light to current converter devices are provided. The processes can be used to make light to current converter devices having P-N junctions located on only the top surface of the cell, located on the top surface and symmetrically or asymmetrically along a portion of the inner surface of the via holes, located on the top surface and full inner surface of the via holes, or located on the top surface, full inner surface of the via holes, and a portion of the bottom surface of the cell. The processes may isolate the desired P-N junction by etching the emitter, forming a via hole after forming the emitter, using a barrier layer to protect portions of the emitter from etching, or using a barrier layer to prevent the emitter from being formed on portions of the substrate.

Abstract: A connector of connecting a light sensor and a substrate is utilized for rotating the light sensor so that the light-receiving direction of the light sensor is parallel with the substrate. When the connector is utilized in an optical touch system, the light sensor can be disposed on the substrate of the optical touch system by means of general manufacturing facilities of flat display panels. Meanwhile, the light-receiving direction of the light sensor is parallel with the substrate of the optical touch system.

Abstract: An optical input/output (I/O) device is provided. The device includes a substrate including an upper trench; a waveguide disposed within the upper trench of the substrate; a photodetector disposed within the upper trench of the substrate and comprising a first end surface optically connected to an end surface of the waveguide; and a light-transmitting insulating layer interposed between the end surface of the waveguide and the first end surface of the photodetector.

Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.

Abstract: A photoelectric conversion element of an embodiment is a photoelectric conversion element which performs photoelectric conversion by receiving illumination light having n light emission peaks having a peak energy Ap (eV) (where 1?p?n and 2?n) of 1.59?Ap?3.26 and a full width at half maximum Fp (eV) (where 1?p?n and 2?n), wherein the photoelectric conversion element includes m photoelectric conversion layers having a band gap energy Bq (eV) (where 1?q?m and 2?m?n), and the m photoelectric conversion layers each satisfy the relationship of Ap?Fp<Bq?Ap with respect to any one of the n light emission peaks.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface; a plurality of sensor elements disposed at the front surface of the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a radiation-shielding feature disposed over the back surface of the substrate and horizontally disposed between each of the plurality of sensor elements; a dielectric feature disposed between the back surface of the substrate and the radiation-shielding feature; and a metal layer disposed along sidewalls of the dielectric feature.

Abstract: A wafer-level camera sensor package includes a semiconductor substrate with an optical sensor on a front surface. Through-silicon-vias (TSV) extend through the substrate and provide I/O contact with the sensor from the back side of the substrate. A glass cover is positioned over the front surface, and the cover and substrate are embedded in a molding compound layer (MCL), the front surface of the MCL lying coplanar with the front of the cover, and the back surface lying coplanar with the back of the substrate. Surface-mount devices, electromagnetic shielding, and through-wafer-connectors can be embedded in the MCL. A redistribution layer on the back surface of the MCL includes bottom contact pads for mounting the package, and conductive traces interconnecting the contact pads, TSVs, surface-mount devices, shielding, and through-wafer-connectors. Anisotropic conductive adhesive is positioned on the front of the MCL for physically and electrically attaching a lens array.

Abstract: Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

Abstract: The present disclosure provides a method of manufacturing a photoelectric conversion device, including, a first step of forming a plurality of photoelectric conversion regions on a surface on one side of a semiconductor wafer, a second step of preparing a light-blocking wafer having insertion openings, a third step of bonding the one-side surface of the semiconductor wafer and a surface on the opposite side to a surface on the one side of the light-blocking wafer to each other to form a bonded wafer body, and a fourth step of dividing the bonded wafer body in peripheries of the photoelectric conversion regions, to obtain bonded-body chips each having the photoelectric conversion region.

Abstract: A white LED lighting device driven by a pulse current is provided, which consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %: 30-90 wt %. The white LED lighting device drives the LED chips with a pulse current having a frequency of not less than 50 Hz. Because of using the afterglow luminescence materials, the light can be sustained when an excitation light source disappears, thereby eliminating the influence of LED light output fluctuation caused by current variation on the illumination. At the same time, the pulse current can keep the LED chips being at an intermittent work state, so as to overcome the problem of chip heating.

Abstract: Structures and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.

Abstract: A method for fabricating an image panel for a hyperspectral camera that is configured to scan a scene and obtain spectral image data over as defined range of wavelengths. At least one companion sensor is first fabricated on a planar imaging surface of a silicon die. At least as region of the silicon die is then back thinned to a diffraction thickness that is suitable for a diffraction slit. A diffraction slit is then formed in the thinned region so that the diffraction slit penetrates the silicon die in the thinned region, and the diffraction slit is co-planar with the imaging surface of the silicon die.

Abstract: A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Abstract: Provided is a semiconductor device having a backside illuminated image sensor and a method of forming same. The method includes providing a first substrate and a second substrate, forming metal interconnections on a first surface of the first substrate, forming a filling insulating layer filling spaces between sides of the metal interconnections and covering upper surfaces of the metal interconnections, forming a buffer insulating layer softer than the filling insulating layer on the filling insulating layer, forming a capping insulating layer denser than the buffer insulating layer on the buffer insulating layer, and bonding a surface of the capping insulating layer to a surface of the second substrate.

Abstract: Described are embodiments of apparatuses and systems including photonic devices having a conductive shunt layer, and methods for making such apparatuses and systems. A photonic device may include a device substrate, a photo-active region disposed on a first region of the device substrate, an isolation region in the device substrate, a contact disposed on a second region of the substrate such that the isolation region is located between the contact and the photo-active region, and a conductive material overlying the isolation region to shunt the first region with the second region. Other embodiments may be described and/or claimed.

Abstract: The present disclosure relates to an optical module comprising a carrier substrate including first electrical connection terminals on a first surface and second electrical connection terminals on a second surface electrically connected to the first electrical connection terminals. The second electrical connection terminals are connectable to a circuit carrier. The optical module further comprises an optically transparent carrier including first electrical connection terminals, and an optical element electrically connected to the optically transparent carrier.

Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on the wiring layer, the level difference being formed at a boundary between a peripheral region of the first semiconductor wafer and an inside region being on an inside of the peripheral region, and the level difference being formed as a result of a surface over the wiring layer in the peripheral region being formed lower than a surface over the wiring layer in the inside region, and making the surfaces over the wiring layer in the peripheral region and the inside region substantially flush with each other; and opposing and laminating the surfaces over the wiring layer formed in the first semiconductor wafer to a desired surface of a second semiconductor wafer.

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

Abstract: An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

Abstract: Disclosed is a semiconductor device and a method for fabricating the semiconductor device. The method for fabricating the semiconductor device comprises steps of: forming a side cliff in a substrate in accordance with a gate mask pattern, the side cliff being substantially vertical to a substrate surface; forming a dielectric layer on the substrate that comprises the side cliff; etching the dielectric layer to have the dielectric layer left only on the side cliff, as a dielectric wall; and burying the side cliff by a substrate growth, the burying is performed up to a level higher than the upper end of the dielectric wall.

Abstract: An image sensor unit includes a fixed substrate, a movable substrate, an actuate section including an actuator for moving the movable substrate against the fixed substrate, an image sensor having an imaging surface on a front surface of the image sensor, and at least, a part of a rear surface of the image sensor being directly fixed onto the movable substrate, an external electrical connecting member for conducting a transmission and reception of signals between the actuate section and the image sensor and an outside of the image sensor unit, and an internal electrical connecting member electrically connects the actuate section, the image sensor and the external connection wiring, wherein the actuate section, the image sensor, the internal connection wiring and a part of the external connection wiring are sealed into the same space.

Abstract: An arrangement for improving adhesive attachment of micro-components in an assembly utilizes a plurality of parallel-disposed slots formed in the top surface of the substrate used to support the micro-components. The slots are used to control the flow and “shape” of an adhesive “dot” so as to quickly and accurately attach a micro-component to the surface of a substrate. The slots are formed (preferably, etched) in the surface of the substrate in a manner that lends itself to reproducible accuracy from one substrate to another. Other slots (“channels”) may be formed in conjunction with the bonding slots so that extraneous adhesive material will flow into these channels and not spread into unwanted areas.

Abstract: A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 ?m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 ?m and 2.0 ?m. The ratio of the sensitivity at the wavelength of 1.3 ?m to the sensitivity at the wavelength of 2.0 ?m is not smaller than 0.5 but not larger than 1.6.

Abstract: A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

Abstract: Some embodiments of the present disclosure relate to an optical sensor. The optical sensor includes a first electrode disposed over a semiconductor substrate. A photoelectrical conversion element, which includes a p-type layer and an n-type layer, is arranged over the first electrode to convert one or more photons having wavelength falling within a predetermined wavelength range into an electrical signal. A second electrode is disposed over the photoelectrical conversion element. The second electrode is transparent in the predetermined wavelength range. A color filter element, which is made up of plasmonic nanostructures, is disposed over the second electrode.

Abstract: Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative terminal of a power supply; a substrate, located on the first electrode; and an LED chip, located on the substrate; in which a plurality of contact holes are formed through the substrate, the contact holes are evenly distributed and filled with electrode plugs connecting the first electrode to the LED chip. The light emitting device includes the LED, and further includes a base and an LED mounted on the base. The manufacturing method includes: providing a substrate; forming on the substrate an LED chip and a second electrode successively; forming a plurality of evenly distributed contact holes on a backface of the substrate, the contact holes extending through the substrate and to the LED chip; and filling the contact holes with conducting material till the backface of the substrate is covered by the conducting material.

Abstract: A structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described. Photoconverters and photoelectrochemical devices based on such structure also described.

Abstract: A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Abstract: Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

Abstract: An image sensor comprises a substrate, a plurality of photoelectric transducer devices, an interconnect structure, at least one dielectric isolator and a back-side alignment mark. The substrate has a front-side surface and a back-side surface opposite to the front-side surface. The interconnect structure is disposed on the front-side surface. The photoelectric transducer devices are formed on the front-side surface. The dielectric isolator extends downwards into the substrate from the back-side surface in order to isolate the photoelectric transducer devices. The back-side alignment mark extends downwards into the substrate from the back-side surface and references to a front-side alignment mark previously formed on the front-side surface.

Abstract: A pixel structure including an active device, a capacitor electrode line, a light shielding layer, a color filter pattern and a pixel electrode is provided. The active device and the capacitor electrode line are disposed on a substrate. The light shielding layer is disposed on the substrate, and the dielectric constant of the light shielding layer is less than 6. The light shielding layer defines a unit area on the substrate, and a contact hole is formed in the light shielding layer above the active device. A color filter pattern is disposed in the unit area, wherein the dielectric constant of the color filter pattern is less than 6, and the color filter pattern does not fill into the contact hole. The pixel electrode is disposed on the color filter pattern, in which the pixel electrode fills into the contact hole so as to electrically connect with the active device.

Abstract: A method of providing a dielectric material (18) having regions (18?, 18?) with a varying thickness in an IC manufacturing process is disclosed. The method comprises forming a plurality of patterns in respective regions (20?, 20?) of the dielectric material (18), each pattern increasing the susceptibility of the dielectric material (18) to a dielectric material removal step by a predefined amount and exposing the dielectric material (18) to the dielectric material removal step.

Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

Abstract: A CCD image sensor is provided with a pixel set. The pixel set is composed of first and second pixels and a microlens. The pixels are arranged side by side in a horizontal direction. The microlens has a hemispheric shape. A diameter of the microlens is larger than a length of a rectangular region, being an external shape of the first and second pixels, in a height direction. The rectangular region has a height and width ratio of approximately 1:2. The pixel sets are arranged in a width direction of the rectangular region to constitute a pixel row. In the CCD image sensor, the pixel rows are arranged in the height direction of the rectangular region, with the adjacent pixel rows shifted from each other in the horizontal direction by half pitch of the rectangular region.