Abstract: An optical device is equipped with a light receiving region 16a and a peripheral circuit region 22 located around the light receiving region 16a on a major surface of an light receiving element 11a; electrodes for external connection 15 electrically connected to the peripheral circuit region 22 formed on a back surface opposite to the major surface of the light receiving element 11a; a transparent member 12 covering the light receiving region 16a adhered on the major surface of the light receiving element 11a with a light-transmitting adhesive 13; and a molding resin 14 for coating side surfaces of the transparent member 12 and the major surface of the light receiving element 11a excluding the region covered with the transparent member 12.

Abstract: Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

Abstract: Disclosed is an integrated circuit (100) comprising a substrate (110) carrying a plurality of light-sensitive elements (112) and a blazed grating (120) comprising a plurality of diffractive elements (122) for diffracting respective spectral components (123-125) of incident light (150) to respective light-sensitive elements (112), the blazed grating (120) comprising a stack of layers, at least some of these layers comprising first portions, e.g. metal portions (202, 222, 242) arranged such that each diffractive element (122) comprises a stepped profile of stacked first portions with a first portion in a higher layer laterally extending beyond a first portion in a lower layer of said stepped profile.

Abstract: A solid-state imaging device including a semiconductor substrate, a photoelectric conversion portion interposed between a lower electrode and an upper electrode, a contact plug formed so as to connect the lower electrode and the semiconductor substrate in order to read signal charges generated in the photoelectric conversion portion to the semiconductor substrate side, a vertical type transmitting path configured by sequentially laminating a connection portion for electrically connecting the contact plug to the semiconductor substrate, a charge accumulation layer for accumulating the signal charges read to the connection portion, and a potential barrier layer configuring a potential barrier between the connection portion and the charge accumulation layer in a vertical direction of the semiconductor substrate, and a charge reading portion configured to read the signal charges accumulated in the charge accumulation layer to the circuit forming surface side of the semiconductor substrate.

Abstract: The present invention discloses a method for reducing the tilt of a transparent window during manufacturing of an image sensor. The method includes the following steps: providing a semimanufacture of the image sensor; carrying out a preheating process; carrying out an adhesive spreading process; carrying out a transparent window closing process; and carrying out a packaging process. By carrying out the preheating process, the environmental conditions can be stabilized during the adhesive spreading process and the transparent window closing process such that the transparent window can be kept highly flat after combining. By the implementation of the present invention, the chance of tilt and crack of the transparent window during manufacturing of the image sensor can be reduced, thereby achieving the goal for a better yield rate.

Abstract: Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and an optically transparent layer contacting the polymer layer and covering the cavity.

Abstract: Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

Abstract: Imaging detectors and methods of manufacturing are provided. One imaging detector includes a first detector layer within a detector module and a second detector layer within the detector module and spaced apart from the first detector layer, wherein the second detector layer has an opening therethrough. The imaging detector also includes a collimator mounted to the detector module, wherein the collimator is one of a single pinhole collimator or a multi-pinhole collimator. Additionally, the second detector layer is mounted within the detector module closer to an opening of the collimator than the first detector layer.

Abstract: An image sensor package and method of manufacture that includes a crystalline handler with conductive elements extending therethrough, an image sensor chip disposed in a cavity of the handler, and a transparent substrate disposed over the cavity and bonded to both the handler and image sensor chip. The transparent substrate includes conductive traces that electrically connect the sensor chip's contact pads to the handler's conductive elements, so that off-chip signaling is provided by the substrate's conductive traces and the handler's conductive elements.

Abstract: The present application disclosed various embodiments of improved performance optically coated semiconductor devices and various methods for the manufacture thereof and includes depositing a first layer of a low density, low index of refraction material on a surface of a semiconductor device, depositing a multi-layer optical coating comprising alternating layers of low density, low index of refraction materials and high density, high index of refraction materials on the coated surface of the semi-conductor device, selectively ablating a portion of the alternating multi-layer optical coating to expose at least a portion of the low density first layer, and selectively ablating a portion of the first layer of low density material to expose at least a portion of the semiconductor device.

Abstract: A method of manufacturing a crystalline silicon solar cell, subsequently including: providing a crystalline silicon substrate having a first side and a second side opposite the first side; pre-diffusing Phosphorus into a first side of the substrate to render a Phosphorus diffused layer having an initial depth; blocking the first side of the substrate; exposing a second side of the substrate to a Boron diffusion source; heating the substrate for a certain period of time and to a certain temperature so as to diffuse Boron into the second side of the substrate and to simultaneously diffuse the Phosphorus further into the substrate.

Abstract: Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.

Abstract: Magnetically adjusting color-converting particles within a matrix and associated devices, systems, and methods are disclosed herein. A magnetic-adjustment process can include applying a magnetic field to a mixture including a non-solid matrix and a plurality of color-converting particles (e.g. magnetically anisotropic color-converting particles). The magnetic field can cause the plurality of color-converting particles to move into a generally non-random alignment (e.g., a generally non-random magnetic alignment and/or a generally non-random shape alignment) within the non-solid matrix. The non-solid matrix then can be solidified to form a solid matrix. A magnetic-adjustment process can be performed in conjunction with testing and/or product binning of solid-state radiation transducer devices.

Abstract: This disclosure provides systems, methods, and apparatus for directing light incident on a window towards photovoltaic cells. In one aspect, photovoltaic cells are arranged the perimeter of a window pane. The pane also includes light-turning features that divert a portion of the incident light towards the photovoltaic cells on the perimeter, while simultaneously transmitting a portion of incident light through the pane. The dimensions and arrangement of the light-turning features can be adjusted to change the amount of light diverted to the photovoltaic cells, and consequently the amount of light transmitted through the glass.

Abstract: A manufacturing method of a solid-state imaging device includes: preparing a photoelectric conversion device; forming an insulating layer on a surface of the photoelectric conversion device; forming a wire-grid polarizer on a support base; bonding a forming surface of the wire-grid polarizer on the support base to the insulating layer on the surface of the photoelectric conversion device and removing the support base from the wire-grid polarizer.

Abstract: According to one embodiment, an image detector comprises a plurality of photosensitive detector unit cells interconnected to a plurality of integrated circuits by a plurality of direct bond interconnects. Each unit cell includes an absorber layer and a separation layer. The absorber layer absorbs incident photons such that the absorbed photons excite photocurrent comprising first charged carriers and second charged carriers having opposite polarities. The separation layer separates the first charged carriers for collection at one or more first contacts and the second charged carriers for collection at one or more second contacts. The first and second contacts include the direct bond interconnects to conduct the first charged carriers and the second charged carriers from the unit cells in order to facilitate image processing.

Abstract: An image sensor pixel array includes a photoelectric conversion unit that has a second region in a substrate and vertically below a gate electrode of a transistor. A first region under a top surface of the substrate and above the second region supports a channel of the transistor. A color filter transmits a light via a light guide, the gate electrode and the first region to generate carriers collected by the second region. The gate electrode may be made thinner by a wet etch. An etchant for thinning the gate electrode may be introduced through an opening in an insulating film on the substrate. The light guide may be formed in the opening after the thinning. An anti-reflection stack may be formed at a bottom of the opening prior to forming the light guide.

Abstract: Systems, methods and apparatus are provided for electromechanical systems devices having a sidewall spacer along at least one sidewall of a conductive line. An electromechanical systems device can include a sidewall spacer along at least one sidewall of a conductive line under a movable layer. The sidewall spacer can be sloped such that the sidewall spacer has a decreasing width away from a substrate under the movable layer. The conductive line can be configured to route an electrical signal to the electromechanical systems device. In some implementations, a black mask structure of an electromechanical systems device can include the conductive line.

Abstract: According to one embodiment, a pixel detecting light having the longest wavelength in a picture element includes a protective film which is disposed on a photodiode at a surface side facing a light incident surface of a semiconductor substrate and a first diffraction grating portion which is disposed on the protective film and where columnar holes penetrating in a thickness direction are two-dimensionally arrayed. Diameter and array period of the holes are selected so that the first diffraction grating portion reflects light transmitting through a filter disposed on the pixel.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.

Abstract: A lens holder, a method for manufacturing the same and an image capturing device thereof. The lens holder comprises a hollow substrate, a filter, a hollow elastomer and a photodetector module. The hollow substrate comprises a photodetector accommodating space and a plurality of fixing mechanisms disposed around the photodetector accommodating space. The filter is disposed inside the photodetector accommodating space and covers a hollow section of the hollow substrate. The hollow elastomer is disposed on the filter. The photodetector module is disposed on the hollow elastomer and comprises a photodetector and a substrate. The substrate can be fixed onto the hollow substrate through the plurality of fixing mechanisms. Wherein, a plurality of protrusion parts extends from the hollow elastomer for holding the substrate. The aforementioned lens holder structure can be used to perform a tilt alignment of the photodetector efficiently.

Abstract: A thin film photoelectric conversion device for performing photoelectric conversion of a wide range of light, from the visible range to the infrared range, is provided.

Abstract: An integrated die-level camera system and method of making the camera system include a first die-level camera formed at least partially in a die. A second die level camera is also formed at least partially in the die. Baffling is formed to block stray light between the first and second die-level cameras.

Abstract: A manufacturing method of a BSI image sensor includes providing a substrate having a plurality of photo-sensing elements and a plurality of multilevel interconnects formed on a first side of the substrate; forming a redistribution layer (RDL) and a first insulating layer covering the RDL on the front side of the substrate; providing a carrier wafer formed on the front side of the substrate; forming a color filter array (CFA) on a second side of the substrate, the second side being opposite to the first side; removing the carrier wafer; and forming a first opening in the first insulating layer for exposing the RDL.

Abstract: Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc.

Abstract: This invention improves the efficiency of non-optimal solar cell materials, enabling them to achieve the same efficiency as optimal materials. The invention describes a method of improving the emission and absorption properties of a generic photovoltaic cell using feedback reflectors and/or filters, increasing the open circuit voltage of the cell, and thus the overall efficiency. Specific examples of single junction photovoltaics are detailed, but not limited to. Particularly, semiconducting solar cells in either single- or multi-junction formats are described. The invention can be applied to any functioning solar cell to increase the efficiency, while describing the maximal efficiency available using thermodynamic identities. Other examples are included, such as organic photovoltaic, nanostractured photovoltaic devices, and non-planar geometries.

Abstract: A method for fabricating an image sensor is provided. A substrate is provided, and then a plurality of photoresist patterns is formed on the substrate. The photoresist patterns are arranged in a first array and defined by a plurality of photomask patterns arranged as a photomask pattern array, wherein a top view of each photoresist pattern has a substantially square shape and a distance between two neighboring photoresist patterns decreases from a center of the first array toward an edge of the first array. Besides, each photomask pattern includes a transparent portion and an opaque portion, wherein an area proportion of the transparent portion included in a photomask pattern increases from the center toward the edge of the photomask pattern array. Then, a thermal reflow step is performed to convert the photoresist patterns into a plurality of microlenses arranged in a second array.

Abstract: A method of fabricating a backside illuminated imaging sensor that includes a device layer, a metal stack, and an opening is disclosed. The device layer has an imaging array formed in a front side of the device layer, where the imaging array is adapted to receive light from a back side of the device layer. The metal stack is coupled to the front side of the device layer and includes at least one metal interconnect layer having a metal pad. The opening extends from the back side of the device layer to the metal pad to expose the metal pad for wire bonding. The method includes depositing a film on the back side of the device layer and within the opening, then etching the film to form a frame within the opening to structurally reinforce the metal pad.

Abstract: Disclosed herein is a method of manufacturing a solid-state image pickup element having a lens provided above a light receiving portion. The manufacturing method includes: forming a lens base material layer composing the lens; forming an intermediate film having a thermal expansion coefficient larger than that of a resist on the lens base material layer; forming the resist in contact with the intermediate film; forming the resist into a lens shape by thermal reflow; and transferring the lens shape of the resist to the lens base material layer by etching, thereby forming the lens.

Abstract: A solid-state image sensor has a plurality of pixel units, each pixel unit including a plurality of pixels, and a charge-voltage converter shared by the plurality of pixels. The sensor includes a structural portion including a plurality of wiring layers, an interlayer insulating film, and light waveguides configured by embedding, in portions of the interlayer insulating film located above the photoelectric converters, a material having a refractive index higher than that of the interlayer insulating film. A dummy pattern is formed in the structural portion to reduce a difference between a sensitivity of a first pixel and that of a second pixel, which is produced by a difference between a structure in a periphery of the light waveguide arranged above the photoelectric converter of the first pixel and that of the second pixel.

Abstract: An image sensor includes first pixels, second pixels and a deep trench. The first pixels are formed in an active region of a semiconductor substrate, and configured to measure photo-charges corresponding to incident light. The second pixels are formed in an optical-black region of the semiconductor substrate, and are configured to measure black levels. The deep trench is formed vertically in a boundary region of the optical-black region, where the boundary region is adjacent to the active region, and configured to block leakage light and diffusion carriers from the active region.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.

Abstract: A method for manufacturing a solid-state image pickup device is provided. A first pixel isolation member is formed in a semiconductor substrate including pixels by implanting impurity ions in a first region of the substrate to separate pixels in the first region from each other when viewed from a surface of the substrate. A second pixel isolation member is also formed in the substrate by forming a trench in a second region of the substrate different from the first region to separate pixels in the second region from each other, and filling the trench with an electroconductive material harder to polish by CMP than the substrate. The thickness of the substrate is reduced by CMP on a rear surface of the substrate using the second pixel isolation member as a stopper.

Abstract: A multi-junction III-V photovoltaic device is provided that includes at least one top cell comprised of at least one III-V compound semiconductor material; and a bottom cell in contact with a surface of the at least one top cell. The bottom cell includes a germanium-containing layer in contact with the at least one top cell, at least one intrinsic hydrogenated silicon-containing layer in contact with a surface of the germanium-containing layer, and at least one doped hydrogenated silicon-containing layer in contact with a surface of the at least one intrinsic hydrogenated silicon-containing layer. The intrinsic and doped silicon-containing layers can be amorphous, nano/micro-crystalline, poly-crystalline or single-crystalline.

Abstract: A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping material layer having a second conductivity type different from the first conductivity type; performing a drive-in process that includes heating the substrate having the first doping material layer thereon; performing a second deposition process after performing the drive-in process and including forming a second doping material layer on the first doping material layer, wherein the second doping material layer has the second conductivity type; locally heating portions of the substrate, the first doping material layer, and the second doping material layer with a laser to form a contact layer at a first surface of the substrate; and forming a first electrode on the contact layer and a second electrode on a second surface of the substrate opposite to the first surface.

Abstract: According to one embodiment, there is provided a solid-state imaging device including a first photoelectric conversion layer and a color filter. The color filter includes a multi-layer interference filter and a guided mode resonant grating. The guided mode resonant grating includes a plurality of diffraction gratings and a plurality of inter-grating regions. The plurality of diffraction gratings are formed of a material having a first index of refraction and periodically arrayed at least one-dimensionally. The plurality of inter-grating regions are arranged between at least the plurality of diffraction gratings. Each of the plurality of inter-grating regions includes an insulating film region and an air gap region. The insulating film region is formed of a material having a second index of refraction lower than the first index of refraction.

Abstract: The invention relates to a method of initiating molecular bonding, comprising bringing one face (31) of a first wafer (30) to face one face (21) of a second wafer (20) and initiating a point of contact between the two facing faces. The point of contact is initiated by application to one of the two wafers, for example using a bearing element (51) of a tool (50), of a mechanical pressure in the range 0.1 MPa to 33.3 MPa.

Abstract: A solar cell and a solar cell module including the solar cells are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type positioned at a light receiving surface of the substrate; a plurality of first electrodes that are positioned on the emitter layer and are electrically connected to the emitter layer; and at least one first current collector that is positioned on the emitter layer in a direction crossing the plurality of first electrodes, wherein a thickness of each of the plurality of first electrodes is different from a thickness of the at least one first current collector, and a difference of the thickness of the each first electrode to the thickness of the at least one current collector is equal to or less than about 0.5 times the thickness of the at least one first current collector.

Abstract: A detector module, in particular for super-resolution satellites, contains a multi-chip carrier. At least one TDI-CCD detector and at least one CMOS chip are arranged on the multi-chip carrier, and are electrically connected to one another. The CMOS chip contains at least the digital output electronics for the TDI-CCD detector.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface at an opposite side thereof. The first surface has an active layer with a light-receiving part. The semiconductor device also includes an adhesive layer provided to surround the light-receiving part on the first surface of the semiconductor substrate; a light-transmissive protective member disposed above the light-receiving part of the semiconductor substrate with a predetermined gap and adhered via the adhesive layer; and plural external connection terminals arranged in a predetermined array on the second surface of the semiconductor substrate are included. Each center point of the external connection terminals forming two facing edges is positioned inside of an area of the adhesive layer projected on the second surface among the outermost external connection terminals.

Abstract: An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate.

Abstract: A solar cell and method of fabrication are disclosed. In one embodiment of the present invention, the method comprises depositing a first doped amorphous silicon layer on a first surface of a silicon substrate, depositing a second doped amorphous silicon layer on the first surface of the silicon substrate. The second doped amorphous silicon layer is doped oppositely from the first doped amorphous silicon layer. An anneal is performed to transform the first doped amorphous silicon layer and second doped amorphous silicon layer to crystalline silicon layers.

Abstract: Certain embodiments provide a solid-state imaging device including a semiconductor substrate, a reflector, and an external electrode. The semiconductor substrate has a photosensitive region including a photodiode on the surface thereof and the back surface thereof is polished by mirror finish. The reflector is formed on the back surface of the semiconductor substrate and reflects infrared rays incident on the photosensitive region. The external electrode is electrically connected to the photosensitive region.

Abstract: A semiconductor device includes a microlens provided in a pixel area and a monitoring structure provided in a peripheral area that is separate from the pixel area. The monitoring structure has a shape correlated with a shape of the microlens. A shape of a section of the monitoring structure in a plane perpendicular to a substrate is constant.

Abstract: A solid-state imaging device including: a substrate; a light-receiving part; a second-conductivity-type isolation layer; a detection transistor; and a reset transistor.

Abstract: A method for manufacturing a solid state image forming device according to an embodiment includes forming a transparent resin layer 20 on a semiconductor substrate 11, having a plurality of photodiode layers 12 formed thereon in a lattice, through R, G, and B color filters that are formed according to a Bayer arrangement; forming a plurality of first microlens mother dies 23 on the transparent resin layer 20 at the positions corresponding to the green color filters G in such a manner that the outer peripheries thereof are separated from each other; forming a plurality of second microlens mother dies 24 in such a manner that they are formed to fill the gap between the first microlens mother dies 23 and the outer peripheries thereof are separated from each other; and etching the transparent resin layer 20 with the plurality of first microlens mother dies 23 and the plurality of second microlens mother dies 24 being used as masks.

Abstract: An imaging device includes a silicon substrate having a photoelectric conversion element therein, and a wiring layer on a front-surface side of the silicon substrate. The photoelectric conversion element performs photoelectric conversion on light which enters the photoelectric conversion element from the front-surface side through the wiring layer, and performs photoelectric conversion on light which enters the photoelectric conversion element from a back-surface side of the silicon substrate without going through the wiring layer.

Abstract: The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, a method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface; forming a light sensing region at the first surface of the substrate; forming a doped layer at the second surface of the substrate; and after forming the doped layer, polishing the second surface of the substrate.

Abstract: A solid-state imaging device includes: a first lens layer; and a second lens layer, wherein the second lens layer is formed at least at a periphery of each first microlens formed based on the first lens layer, and the second lens layer present at a central portion of each of the first microlenses is thinner than the second lens layer present at the periphery of the first microlens or no second lens layer is present at the central portion of each of the first microlenses.

Abstract: A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.