Abstract: Disclosed is an integrated thin-film photovoltaic module. The integrated thin-film photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, wherein a plurality of through holes are formed to be spaced from each other in the upper electrode and the photoelectric conversion layer of the first cell, and wherein the through hole is filled with a conductive material such that the upper electrode of the second cell is connected with the lower electrode of the first cell.

Abstract: A photoelectric conversion element is provided and includes: a pair of electrodes; a photoelectric conversion layer between the pair of electrodes; and a charge-blocking layer between one of the pair of the electrodes and the photoelectric conversion layer. The charge-blocking layer is capable of suppressing injection of a charge from the one of the pair of electrodes into the photoelectric conversion layer upon application of a voltage across the pair of electrodes, and the charge-blocking layer contains an insulating material and an electrically conductive material.

Abstract: A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

Abstract: An image-sensing module for reducing its whole thickness includes a substrate unit, a carrier unit, an image-sensing unit and a lens unit. The substrate unit includes a substrate body and a through opening passing through the substrate body. The carrier unit includes a carrier body disposed on the bottom surface of the substrate body and corresponding to the through opening. The image-sensing unit includes an image-sensing element disposed on the top surface of the carrier body and embedded in the through opening. The lens unit includes an opaque frame disposed on the top surface of the carrier body to surround the image-sensing element and a lens connected to the opaque frame and positioned above the image-sensing element. Hence, the whole thickness of the image-sensing module can be reduced due to the design of placing the substrate body, the image-sensing element and the opaque frame on the carrier body.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A plurality of image sensors is disposed at the front side of the semiconductor substrate. A plurality of clear color-filters is disposed on the backside of the semiconductor substrate. A plurality of metal rings encircles the plurality of clear color-filters.

Abstract: A wafer-level process for fabricating a plurality of photoelectric modules is provided. The wafer-level process includes at least following procedures. Firstly, a wafer including a plurality of chips arranged in an array is provided. Next, a plurality of photoelectric devices are mounted on the chips. Next, a cover plate including a plurality of covering units arranged in an array is provided. Next, a plurality of light guiding mediums are formed over the cover plate. Next, the cover plate is bonded with the wafer by an adhesive, wherein each of the covering units covers and bonds with one of the chips, and the light guiding mediums are sandwiched between the cover plate and the wafer. Then, the wafer and the cover plate are diced to obtain the plurality of photoelectric modules.

Abstract: According to one embodiment, a solid-state imaging device includes a first collecting element configured to collect lights which are incident on a first photoelectric conversion layer and a third photoelectric conversion layer; and a second collecting element having a larger collecting area than a collecting area of the first collecting element and configured to collect a light which is incident on a second photoelectric conversion layer.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes an isolation feature disposed in the substrate. The image sensor further includes a radiation-sensing region disposed in the substrate and adjacent to the isolation feature. The radiation-sensing region is operable to sense radiation projected toward the radiation-sensing region from the back side. The image sensor also includes a transparent conductive layer disposed over the back side of the substrate.

Abstract: The invention relates to an optical filtering structure consisting of a set of at least two elementary optical filters (R, V, B), an elementary optical filter being centered on an optimum transmission frequency, characterized in that it comprises a stack of n metal layers (m1, m2, m3) and n substantially transparent layers (d1, d2, d3) which alternate between a first metal layer (m1) and an nth substantially transparent layer (d3), the n metal layers (m1, m2, m3) each having a constant thickness and at least one substantially transparent layer having a variable thickness which sets the optimum transmission frequency of an elementary optical filter, n being an integer larger than or equal to 2. Application to miniature image sensors.

Abstract: The optical device includes an active component on a base. The active component is a light sensor and/or a light modulator. The active component including an active medium that includes a ridge and slab regions. The ridge extends upwards from the base and is positioned between the slab regions. The ridge defines a portion of a waveguide on the base. One or more isolation trenches each extends into the slab regions of the active medium and is at least partially spaced apart from the ridge of the active medium.

Abstract: A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed between adjacent two photoelectric conversion elements, a second pattern provided above the element isolation region and above the first pattern, and microlenses provided above the photoelectric conversion elements with the first and the second patterns provided therebetween. The photoelectric conversion device further has convex-shaped interlayer lenses in optical paths between the photoelectric conversion elements and the microlenses, the peak of each convex shape projecting in the direction from the electro-optical element to the microlens.

Abstract: There is employed a lamination structure of semiconductor substrate in which light receiving part having a photoelectric converting function is formed in an inner portion, and insulating films and wirings. There are provided a wiring layer formed above semiconductor substrate and having a concave portion formed in a place corresponding to a portion disposed above light receiving part, second insulating film having a higher refractive index than insulating films and covering a side surface of the wiring layer facing the concave portion, third insulating film having a lower refractive index than second insulating film and covering the side surface of second insulating film, and fourth insulating film having a higher refractive index than third insulating film and covering the side surface of third insulating film.

Abstract: Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.

Abstract: Novel methods for the texturing of photovoltaic cells is described, wherein texturing minimizes reflectance losses and hence increases solar cell efficiency. In one aspect, a microstamp with the mirror inverse of the optimum surface structure is described. The photovoltaic cell substrate to be etched and the microstamp are immersed in a bath and pressed together to yield the optimum surface structure. In another aspect, micro and nanoscale structures are introduced to the surface of a photovoltaic cell by wet etching and depositing nanoparticles or introducing metal induced pitting to a substrate surface. In still another aspect, remote plasma source (RPS) or reactive ion etching (RIE), is used to etch nanoscale features into a silicon-containing substrate.

Abstract: An integrated optical sensor module includes an optical sensor die having an optical sensing area on its first surface, and an application-specific integrated circuit (ASIC) die arranged over the first surface of the optical sensor die. A hole in the ASIC die is at least partially aligned with the optical sensing area such that at least some of the light passing through the hole may contact the optical sensing area. The hole through the ASIC die can be configured to receive an optical fiber, lens structure, or other optical element therein.

Abstract: This invention discloses a backside illuminated image sensor without the need to involve a mechanical grinding process or a chemical-mechanical planarization process in fabrication, and a fabricating method thereof. In one embodiment, an image sensor comprises a semiconductor substrate, a plurality of light sensing elements in the semiconductor substrate, and a cavity formed in the semiconductor substrate. The light sensing elements are arranged in a substantially planar manner. The cavity has a base surface overlying the light sensing elements. The presence of the cavity allows the image to reach the light sensing elements through the cavity base surface. The cavity can be fabricated by etching the semiconductor substrate. Agitation may also be used when carrying out the etching.

Abstract: A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

Abstract: A method for reducing cross talk in image sensors comprises providing a backside illuminated image sensor wafer, forming an isolation region in the backside illuminated image sensor wafer, wherein the isolation region encloses a photo active region, forming an opening in the isolation region from a backside of the backside illuminated image sensor wafer and covering an upper terminal of the opening with a dielectric material to form an air gap embedded in the isolation region of the backside illuminated image sensor wafer.

Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.

Abstract: Described embodiments include optical connections for electronic-photonic devices, such as optical waveguides and photonic detectors for receiving optical waves from the optical waveguides and directing the optical waves to a common point. Methods of fabricating such connections are also described.

Abstract: A solar energy gathering device includes a number of light converging elements, an optical-electrical converting element, and a number of light guiding elements. The light converging elements receives sunlight. Each of the light converging elements has a focal point. The light guiding elements are corresponding to the light converging elements. Each of the light guiding elements has a first end and a second end opposite to the first end. Each of the first ends is positioned on the focal point of the corresponding light converging element to receive the sunlight from the corresponding light converging element. The second ends output the sunlight. The optical-electrical converting element receives the sunlight from the second ends, and converts solar energy of the sunlight from the second ends to electrical energy.

Abstract: A miniature camera module component is formed by creating replicated lens shapes on a protective cover wafer and depositing material to form multiple cavities with the replicated lens shapes respectively disposed therein. A carrier wafer is coupled to the protective cover wafer before it is diced. An intermediate wafer is coupled to the protective cover wafer, and the carrier wafer is removed. An image sensor wafer is coupled to the protective cover wafer, and the intermediate wafer is removed.

Abstract: An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device.

Abstract: Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.

Abstract: Techniques are disclosed for creating optical systems and assemblies that provide increased field of view (FOV) for light detection by coupling a flip-chip light sensor directly to a condenser lens. According to certain embodiments of the invention, an optical assembly can include a condenser lens with a substantially flat surface optically contacted with a substantially flat surface of a substrate of a flip-chip light sensor. The thickness of the substrate is such that the active area of the light sensor is disposed on a focal plane of the optical system. This enables accurate light detection and increased FOV over conventional techniques.

Abstract: A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.

Abstract: There are provided semiconductor substrate, ground layer formed on semiconductor substrate and having an upper surface corresponding to pixel region, the upper surface being lower than an upper surface corresponding to peripheral circuit region, a plurality of color filters disposed two-dimensionally on the upper surface corresponding to pixel region in ground layer, and partition wall provided between color filters. In a section which is orthogonal to the upper surface corresponding to pixel region in ground layer, an occupied area of partition wall provided in outer portion disposed in contact with peripheral circuit region is smaller than that of partition wall provided in central portion of pixel region.

Abstract: The present invention discloses an image sensor including photodiodes formed in a semiconductor substrate, a color filter array formed over the photodiodes, and microlenses formed on the color filter array. A first microlens, which may be any one of two adjacent microlenses, includes an upper portion and a lower portion. The lower portion of the first microlens is formed of a material different than a material of the upper portion of the first microlens.

Abstract: A device includes a semiconductor substrate having a front side and a backside. An active image sensor pixel array is disposed on the front side of the semiconductor substrate. A metal shield is disposed on the backside of, and overlying, the semiconductor substrate. The metal shield has an edge facing the active image sensor pixel array. The metal shield has a middle width, and a top width greater than the middle width.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A dielectric layer is disposed on the backside of the semiconductor substrate, wherein the dielectric layer is over a back surface of the semiconductor substrate. A metal shield is over the dielectric layer and overlapping the photo-sensitive device. A metal plug penetrates through the dielectric layer, wherein the metal plug electrically couples the metal shield to the semiconductor substrate.

Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

Abstract: Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

Abstract: Solar cells, solar modules, and methods for their manufacture are disclosed. An example method may comprise forming a dielectric layer on at least one or more edges of a substrate, and then introducing dopant to at least one surface of the substrate. The substrate may be subjected to a heating process to at least drive the dopant to a predefined depth, thereby forming at least one of an emitter layer and a surface field layer. In the example method, the dielectric layer may not be removed during a subsequent manufacturing process. Associated solar cells and solar modules are also provided.

Abstract: Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.

Abstract: A solid-state image pickup device including a pixel array having a plurality of pixels, each of which includes a photoelectric converting unit and a multilayer interference filter. The multilayer interference filter includes an upper laminated structure, a lower laminated structure, and a control structure. Both the multilayer interference filter in a first pixel and the multilayer interference filter in a second pixel which is more distant from a center of the pixel array than the first pixel are disposed to selectively guide a light having a first color to the photoelectric converting unit. The control structure in the first pixel and the control structure in the second pixel have different configurations from each other in such a manner that a filter characteristic of the multilayer interference filter in the first pixel is equivalent to that of the multilayer interference filter in the second pixel.

Abstract: An integrated circuit having an insulated conductor or within a semiconductor substrate and extending perpendicular to a plane of a semiconductor wafer or substrate on which the integrated circuit is fabricated, the conductor comprising a first region of doped semiconductor extending between a first device or a first contact and a second device or a second contact.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: According to example embodiments, a solar cell includes a transparent base substrate having a first surface and a second surface opposite the first surface, a first photoelectric layer having a thin film shape on the first surface of the base substrate; and a second photoelectric layer having a thin film shape on the second surface of the base substrate. A bandgap of the second photoelectric layer may be different than a bandgap of the first photoelectric layer.

Abstract: A silicon-on-insulator wafer is provided. The silicon-on-insulator wafer includes a silicon substrate having optical vias formed therein. In addition, an optically transparent oxide layer is disposed on the silicon substrate and the optically transparent oxide layer is in contact with the optical vias. Then, a complementary metal-oxide-semiconductor layer is formed over the optically transparent oxide layer.

Abstract: An image-sensing module includes a substrate unit, a light-transmitting unit, an image-sensing unit and a lens unit. The substrate unit includes at least one flexible substrate having at least one through opening. The light-transmitting unit includes at least one light-transmitting element disposed on the top surface of the flexible substrate and corresponding to the through opening. The image-sensing unit includes at least one image-sensing element disposed on the bottom surface of the light-transmitting element and embedded in the through opening, and the image-sensing element is electrically connected to the flexible substrate. The lens unit includes an opaque frame disposed on the top surface of the flexible substrate to surround the light-transmitting element and a lens positioned on the opaque frame to correspond to the light-transmitting element.

Abstract: Disclosed is a solid-state image pickup apparatus including a photoelectric converter formed on a substrate, a wiring portion formed above the photoelectric converter and constituted of multilayer wirings, and an insulating portion in which the multilayer wirings of the wiring portion are embedded, the insulating portion having a refractive index larger than a silicon oxide.

Abstract: An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

Abstract: Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

Abstract: Methods and devices are provided for absorber layers formed on foil substrate. In one embodiment, a method of manufacturing photovoltaic devices may be comprised of providing a substrate comprising of at least one electrically conductive aluminum foil substrate, at least one electrically conductive diffusion barrier layer, and at least one electrically conductive electrode layer above the diffusion barrier layer. The diffusion barrier layer may prevent chemical interaction between the aluminum foil substrate and the electrode layer. An absorber layer may be formed on the substrate. In one embodiment, the absorber layer may be a non-silicon absorber layer. In another embodiment, the absorber layer may be an amorphous silicon (doped or undoped) absorber layer. Optionally, the absorber layer may be based on organic and/or inorganic materials.

Abstract: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Abstract: A solid-state imaging device capable of making reduction in reflection at the interface between a light guide and an incident unit consistent with improvement in condensing efficiency by the light guide is provided. The solid-state imaging device includes a substrate internally including a photoelectric conversion unit, and a condensing unit provided on an optical incident side of the substrate. A configuration satisfying relationships of |N1|<|??×??| and 0.63<N1/(??/??)<1.58 on an end face of the optical incident side of the condensing unit is adopted. Here, N1 is a refractive index of a medium forming a region of the optical incident side of the condensing unit, and ? is a specific permittivity of a medium forming the condensing unit, and ? is a specific permeability of the medium forming the condensing unit.

Abstract: A solid-state imaging device includes photoelectric conversion elements on an imaging surface of a substrate, receiving light incident on a light receiving surface and performing photoelectric conversion to produce a signal charge. Electrodes are interposed between the photoelectric conversion elements and light blocking portions are provided above the electrodes and interposed between the photoelectric conversion elements. The light blocking portions include an electrode light blocking portion formed to cover the corresponding electrode, and a pixel isolation and light blocking portion protruding convexly from the upper surface of the electrode light blocking portion. The photoelectric conversion elements are arranged at first pitches on the imaging surface. The electrode light blocking portions and the pixel isolation and light blocking portions are arranged at second and third pitches on the imaging surface.

Abstract: The present invention relates to a backside illuminated (BSI) imager having a plurality of layers. A plurality of pixel sensors are positioned on a first layer of a substrate. Pixel select conductors are positioned on the substrate in front of the first layer. Pixel readout conductors including a plurality of output lines, pixel power conductors, and a ground conductor are positioned on the substrate in front of the pixel select conductors. A plurality of sample and hold capacitors coupled to the pixel output lines are positioned vertically and/or horizontally on the substrate in front of the ground conductor.

Abstract: This disclosure provides systems, methods and apparatus including a hybrid wedge shaped/microstructured light collector that is optically coupled to one or more photovoltaic cells. In one aspect, the hybrid wedge shaped/microstructured light collector includes a wedge shaped light guide having an inclined light receiving surface that can collect light incident at angles in the range from about 60 degrees to about 90 degrees with respect to a normal to the inclined light receiving surface. Additionally, the hybrid wedge shaped/microstructured light collector includes a microstructured light collector that can collect light incident at angles in the range from about 0 degrees to about 60 degrees with respect to a normal to the inclined light receiving surface.

Abstract: Image sensors include a first insulation interlayer structure on a first surface of a substrate and having a multi-layered structure. A first wiring structure is in the first insulation interlayer structure. A via contact plug extends from a second surface of the substrate and penetrates the substrate to be electrically connected to the first wiring structure. Color filters and micro lenses are stacked on the second surface in a first region of the substrate. A second insulation interlayer structure is on the second surface in a second region of the substrate. A second wiring structure is in the second insulation interlayer structure to be electrically connected to the via contact plug. A pad pattern is electrically connected to the second wiring structure and having an upper surface through which an external electrical signal is applied. Photodiodes are between the first and second wiring structures in the first region.