Abstract: A light emitting diode comprises a substrate, a buffer layer, a semiconductor layer and a semiconductor light emitting layer. The buffer layer is disposed on the substrate. The semiconductor layer is disposed on the buffer layer. The semiconductor light emitting layer is disposed on the semiconductor layer. A plurality of voids is defined within the semiconductor layer. Each void encloses air therein. A method for manufacturing the light emitting diode is also provided. Light generated by the semiconductor light emitting layer toward the substrate is reflected by the voids to emit out of the light emitting diode.

Abstract: A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x<y<z?1.

Abstract: A light-emitting device includes a conductive substrate (320), a multilayer semiconductor structure situated above the conductive substrate including a n-type doped semiconductor layer (308), a p-type doped semiconductor layer (312) situated above the n-type doped semiconductor layer (308), and a MQW active layer (310) situated between the p-type and n-type doped semiconductor layer (308,312). The multilayer semiconductor structure is divided by grooves (300) to form a plurality of independent light-emitting mesas (304,306). At least one light-emitting mesa (304,306) comprises a color conversion layer (324,326).

Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

Abstract: Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of aMO-bAlN-cSi3N4, which uses light having a peak wavelength in a wavelength band of about 350 nm to about 480 nm as an excitation source to emit visible light having a peak wavelength in a wavelength band of about 480 nm to about 680 nm. (where M is one selected from alkaline earth metals (0.2?a/(a+b)?0.9, 0.05?b(b+c)0.85, 0.4?c/(c+a)?0.

Abstract: A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

Abstract: A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer (“HIL”), a hole transport layer (“HTL”), an emitting layer, an electron transport layer (“ETL”), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The solid state lighting device also includes an indentation extending from the second semiconductor material toward the active region and the first semiconductor material and an insulating material in the indentation of the solid state lighting structure.

Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.

Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.

Abstract: According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: Embodiments provide a light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and a protective layer disposed at a side of the light emitting structure, and a first electrode formed on an outside of the protective layer.

Abstract: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

Abstract: Light-emitting devices, and related components, systems, and methods associated therewith are provided.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of III-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.

Abstract: A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer.

Abstract: Photodetectors and integrated circuits including photodetectors are disclosed. A photodetector in accordance with the present invention comprises a silicon-on-insulator (SOI) structure resident on a first substrate, the SOI structure comprising a passive waveguide, and a III-V structure bonded to the SOI structure, the III-V structure comprising a quantum well region, a hybrid waveguide, coupled to the quantum well region and the SOI structure adjacent to the passive waveguide, and a mesa, coupled to the quantum well region, wherein when light passes through the hybrid waveguide, the quantum well region detects the light and generates current based on the light detected.

Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.

Abstract: An optical device capable of emitting polarized light includes a light emitting means, two multi-layer optical films disposed above and below the light emitting means and two metal layers. The two metal layers cover the two multi-layer optical layers from the upper and lower sides respectively. Each of the two multi-layer optical films includes at least two films made from materials of different refractive indexes that are stacked in a staggered manner. The optical film formed by the multi-layer optical films and metal layers provides greater reflectance to S-polarized light (TE) and higher absorption to P-polarized light. Light generated by the light emitting means emits diagonally to the optical films and is reflected several times thereof to form S-polarized light (TE) to emit sideward.

Abstract: Solid state lighting devices that can produce white light without a phosphor are disclosed herein. In one embodiment, a solid state lighting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region includes a first sub-region having a first center wavelength and a second sub-region having a second center wavelength different from the first center wavelength.

Abstract: Provided is a III-nitride semiconductor laser allowing for provision of a low threshold with use of a semipolar plane. A primary surface 13a of a semiconductor substrate 13 is inclined at an angle of inclination AOFF in the range of not less than 50 degrees and not more than 70 degrees toward the a-axis direction of GaN with respect to a reference plane perpendicular to a reference axis Cx along the c-axis direction of GaN. A first cladding layer 15, an active layer 17, and a second cladding layer 19 are provided on the primary surface 13a of the semiconductor substrate 13. The well layers 23a of the active layer 17 comprise InGaN. A polarization degree P in the LED mode of emission from the active layer of the semiconductor laser that reaches lasing is not less than ?1 and not more than 0.1.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition.

Abstract: A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well.

Abstract: A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

Abstract: A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers.

Abstract: A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.

Abstract: A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0?x, 0?y, x+y?1).

Abstract: A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

Abstract: An inorganic EL device is provided with a substrate, a first electrode, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode. The inorganic EL light emitting device is characterized in that the light emitting layer contains a quantum dot and is arranged between the first insulating layer and the second insulating layer by being brought into contact with each of the insulating layers.

Abstract: A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.

Abstract: A light-emitting diode includes a transparent substrate and a compound semiconductor layer that includes a light-emitting unit and is bonded to the transparent substrate. The light-emitting unit includes a light-emitting layer represented by a composition formula (AlXGa1-X)YIn1-YP (0?X?1, 0<Y?1). A first electrode and a second electrode having a polarity different from that of the first electrode are provided on a main light-emitting surface of the light-emitting diode. The second electrode is formed on the compound semiconductor layer so as to be opposite to the first electrode with a light-emitting layer interposed therebetween. The side surface of the transparent substrate includes a first side surface that is close to the light-emitting layer and is substantially vertical to a light-emitting surface of the light-emitting layer and a second side surface that is distanced away from the light-emitting layer and is inclined with respect to the light-emitting surface.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon structure in direct contact with the substrate surface. The epitaxial silicon structure has a sidewall extending away from the substrate surface. The solid state lighting device also includes a semiconductor material on at least a portion of the sidewall of the epitaxial silicon structure. The semiconductor material has a semiconductor surface that is spaced apart from the substrate surface and is located on a semi-polar or non-polar crystal plane of the semiconductor material.

Abstract: Provided is a nitride semiconductor light emitting device including a light emitting layer above a GaN support base with a semipolar surface and allowing for suppression of reduction in luminous efficiency due to misfit dislocations. A nitride semiconductor light emitting device 11 has a support base 13 comprised of a hexagonal gallium nitride, an n-type gallium nitride-based semiconductor layer 15 including an InX1AlY1Ga1-X1-Y1N (0<X1<1, 0<Y1<1, X1+Y1<1) layer 21, a light emitting layer 17, and a p-type gallium nitride-based semiconductor layer 19. This InAlGaN layer 21 is provided between a semipolar primary surface 13a and the light emitting layer 17. Since the bandgap E of the InAlGaN layer 21 is not less than the bandgap E of gallium nitride, a confinement effect of carriers and light in the light emitting layer 17 is provided.

Abstract: A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure.

Abstract: Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

Abstract: A light emitting device is provided. The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and comprising a plurality of well layers and a plurality of barrier layers, a first nitride semiconductor layer disposed between the first conductivity type semiconductor layer and the active layer, and a second nitride semiconductor layer disposed between the active layer and the second conductivity type semiconductor layer, wherein the first nitride semiconductor layer has a higher indium composition than that of at least one of the plurality of well layers.

Abstract: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements.

Abstract: An optical semiconductor device such as a light emitting diode is formed on a transparent substrate having formed thereon a template layer, such as AlN, which is transparent to the wavelength of emission of the optical device. A mixed alloy defect redirection region is provided over the template layer such that the composition of the defect redirection region approaches or matches the composition of the regions contiguous thereto. For example, the Al content of the defect redirection region may be tailored to provide a stepped or gradual Aluminum content from template to active layer. Strain-induced cracking and defect density are reduced or eliminated.

Abstract: A light-emitting device includes a first layer, a second layer, and a semiconductor body interposed between the first and second layers, wherein the semiconductor body has a first fine-wall-shape member, a second fine-wall-shape member, and a semiconductor member interposed between the first and second fine-wall-shape members, the first and second fine-wall-shape members have a third layer, a fourth layer, and a fifth layer interposed between the third and fourth layers, the fifth layer is a layer that generates light and guides the light, the third and fourth layers are layers that guide the light generated in the fifth layer, and the first and second layers are layers that suppress leakage of the light generated in the fifth layer.

Abstract: A light emitting device (LED) includes a broadband LED chip having a multi-quantum well active region including alternating active and barrier layers. The active layers respectively include different thicknesses and/or different relative concentrations of at least two elements of a semiconductor compound, and are respectively configured to emit light of different emission wavelengths that define an asymmetric spectral distribution over a wavelength range within a visible spectrum. Related devices are also discussed.

Abstract: The present invention discloses a double-reflective-layer gallium nitride-based flip-chip light-emitting diode with both a distributed Bragg reflector and a metal reflective layer on its side and a fabrication method thereof. The light-emitting diode includes: a sapphire substrate; a buffer layer, an N-GaN layer, a multiple-quantum-well layer and a P-GaN layer stacked on the sapphire substrate in that order; a transparent conductive layer formed on the P-GaN layer; a distributed Bragg reflector formed over a side of the epitaxial layer and the transparent conductive layer; a metal reflective layer formed on the DBR; a P-type ohmic contact electrode formed on the transparent conductive layer; and an N-type ohmic contact electrode formed on the exposed N-GaN layer, wherein the P-type ohmic contact electrode and the N-type ohmic contact electrode are bonded to a heat dissipation substrate through a metal conductive layer and a ball bonder.

Abstract: A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate defines a 20 21 crystal growth plane and a glide plane. The N-side and P-side waveguiding layers comprise a GaInN/GaN or GaInN/GaInN superlattice (SL) waveguiding layers. The superlattice layers of the N-side and P-side SL waveguiding layers define respective layer thicknesses that are optimized for waveguide planarity, the layer thicknesses being between approximately 1 nm and approximately 5 nm. In accordance with another embodiment of the present disclosure, planarization can be enhanced by ensuring that the N-side and P-side GaN-based waveguiding layers are grown at a growth rate that exceeds approximately 0.09 nm/s, regardless of whether the N-side and P-side GaN-based waveguiding layers are provided as a GaInN/GaN or GaInN/GaInN SL or as bulk waveguiding layers.

Abstract: Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured.

Abstract: A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure comprises a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer comprising the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.

Abstract: A semiconductor light emitting device, including a reflective electrode layer; a second conductive semiconductor layer formed on a portion of a top surface of the reflective electrode layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; a first electrode formed under one portion of the first conductive semiconductor layer; and an insulating layer having a lower portion, a first upwardly directed side wall portion at a first side of the first electrode and a second upwardly directed side wall portion at a second side of the first electrode that is opposite to the first side. At least one portion of the lower portion is between the second conductive semiconductor layer and the reflective electrode layer.