Abstract: A film can include a plurality of semiconductor nanocrystals and a J-aggregating material in solution. The film can exhibit 90% energy transfer efficiency from the J-aggregating material to the plurality of semiconductor nanocrystals. The film can exhibit photoluminescence that is enhanced at least 2.5 times over an equivalent film including the plurality of semiconductor nanocrystals alone when excited at 465 nm. The film can be contacted onto a substrate by spin casting.

Abstract: Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

Abstract: A semiconductor light emitting device includes: a first cladding layer made of a first conductivity type group III nitride semiconductor; an active layer formed on the first cladding layer; a quantum well electron barrier layer which is formed on the active layer, and includes electron trapping barrier layers made of AlxbGaybIn1-xb-ybN (0?xb<1, 0<yb?1, 0?1-xb-yb<1), and two or more electron trapping well layers made of AlxwGaywIn1-xw-ywN (0?xw<1, 0<yw?1, 0?1-xw-yw<1); and a second cladding layer which is formed on the quantum well electron barrier layer, and is made of a second conductive type group III nitride semiconductor. Each of the electron trapping well layers is formed between the electron trapping barrier layers, and band gap energies of the electron trapping well layers increase with decreasing distance from the active layer.

Abstract: A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Abstract: Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon.

Abstract: One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

Abstract: An improved method of creating LEDs is disclosed. Rather than using a dielectric coating to separate the bond pads from the top surface of the LED, this region of the LED is implanted with ions to increase its resistivity to minimize current flow therethrough. In another embodiment, a plurality of LEDs are produced on a single substrate by implanting ions in the regions between the LEDs and then etching a trench, where the trench is narrower than the implanted regions and positioned within these regions. This results in a trench where both sides have current confinement capabilities to reduce leakage.

Abstract: A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum well adjacent to at least one modulation-doped layer. Alternatively, or in addition thereto, at least one surface of the n-type layer or the p-type layer is texturized to form a textured surface facing the active layer.

Abstract: In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals by self-organization in the presence of this compression stress. The compression stress inhibits an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. The compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A method for fabricating a semiconductor light-emitting device based on a strain adjustable multilayer semiconductor film is disclosed. The method includes epitaxially growing a multilayer semiconductor film on a growth substrate, wherein the multilayer semiconductor film comprises a first doped semiconductor layer, a second doped semiconductor layer, and a multi-quantum-wells (MQW) active layer; forming an ohmic-contact metal layer on the first doped semiconductor layer; depositing a metal substrate on top of the ohmic-contact metal layer, wherein the density and/or material composition of the metal substrate is adjustable along the vertical direction, thereby causing the strain in the multilayer semiconductor film to be adjustable; etching off the growth substrate; and forming an ohmic-electrode coupled to the second doped semiconductor layer.

Abstract: A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well structure is formed of a first layer made of a first semiconductor alloy for electron confinement and a second layer made of a second semiconductor alloy for hole confinement, wherein a thickness and composition of each layer is such that a characteristic hole confinement energy of the bilayer quantum well structure is at least 200 meV.

Abstract: A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.

Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

Abstract: A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1-x-yInyN (0?x, 0?y, x+y?1). The second portion is provided between the first portion and the second layer and is made of AlxGa1-x-yInyN (0?x, 0?y, x+y?1).

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad.

Abstract: A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.

Abstract: Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current.

Abstract: The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In2O3 including one of Mg, Zn and Cu), and then a transparent electrode layer and a second electrode with ITO thereon, so as to improve contact resistance between the upper clad layer and the second electrode while providing high transparency, wherein the upper clad layer is comprised of a p-type GaN layer and a p-type AlGaN layer sequentially formed on the upper part of the active layer.

Abstract: Light emitting devices, and related components, processes, systems and methods are disclosed.

Abstract: There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part.

Abstract: A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction.

Abstract: A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.

Abstract: There is provided a light emitting device of a simpler structure, capable of ensuring a broad light emitting area and a high light emitting efficiency, while manufactured in a simplified and economically efficient process. The light emitting device including: a semiconductor layer; an active layer formed on the semiconductor layer, the active layer comprising at least one of a quantum well structure, a quantum dot and a quantum line; an insulating layer formed on the active layer; and a metal layer formed on the insulating layer.

Abstract: A light emitting device according to the embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a superlattice structure layer on the second conductive semiconductor layer, and a third conductive semiconductor layer on the superlattice structure layer; a light transmission electrode layer on the light emitting structure; a first electrode connected to the first conductive semiconductor layer; a second electrode electrically connected to the light transmission electrode layer on the light emitting structure; and an insulating layer extending from a lower portion of the second electrode to an upper portion of the second conductive semiconductor layer.

Abstract: A surface plasmon enhanced light-emitting diode includes, from bottom to top, a substrate, an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, and a plurality of metal filler elements. The p-type semiconductor layer includes upper and lower surfaces, and the upper surface is recessed downward to form a plurality of spaced apart recesses for receiving the metal filler elements, respectively.

Abstract: A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0<Y<1) and the fourth semiconductor layer has a composition equation of AlY(GaxIn1-x)1-YN (X=1,0<Y<1).

Abstract: A gated quantum well device formed as an MOS capacitor is disclosed. The quantum well is an inversion region less than 20 nanometers wide under the MOS gate. The device may be fabricated in either polarity, and integrated into a CMOS IC, configured as a quantum dot device or a quantum wire device. The device may be operated as a precision charge pump, with a minority carrier injection region added to speed well filling.

Abstract: The embodiments of the present invention generally relates to methods for enhancing the light extraction by surface roughening of the bottom n-GaN layer and/or top p-GaN layer so that the internal light from the active region is scattered outwardly to result in a higher external quantum efficiency. In one embodiment, a surface roughening process is performed on the n-GaN layer to form etching pits in a top surface of the n-GaN layer. Once the etching pits are formed, growth of the n-GaN material may be resumed on the roughened n-GaN layer to partially fill the etching pits, thereby forming air voids at the interface of the n-GaN layer and the subsequent, re-growth n-GaN layer. These air voids provide one or more localized regions with indices of reflection different from that of the n-GaN layer, such that the internal light generated by the active layers (e.g., the InGaN MQW layer), when passing through the n-GaN layer, is scattered by voids or bubbles.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0<x1, 0?y1, x1+y1<1). The second barrier layer is provided between the first barrier layer and the second layer and includes Alx2Ga1-x2-y2Iny2N (0<x2, 0?y2, x2+y2<1). The well layer is provided between the first barrier layer and the second barrier layer, includes Alx0Ga1-x0-y0Iny0N (0?x0, 0<y0, x0+y0<1, y1<y0, y2<y0), and is configured to emit near ultraviolet light.

Abstract: A semiconductor light emitting device comprising a semiconductor layer of (AlyGa1-y)xIn1-xP (0<x?1, 0?y?1) that consists of a first semiconductor layer of a first electrical conduction type, an active layer of a multiple quantum well structure containing a barrier layer and a distortion-containing well layer, a second semiconductor layer of a second electrical conduction type, and a third semiconductor layer of the second electrical conduction type, constructed in this order in the form of a generally flat laminate; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the third semiconductor layer; wherein part of the active layer facing the second semiconductor layer side is inclined from the surface of the active layer toward its normal, and the third semiconductor layer has a composition of Ga1-zInzP (0?z?0.35).

Abstract: Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.

Abstract: A hybrid LED comprising an anode, an organic hole-transport layer for transporting holes injected into the diode from said anode, a light-emitting quantum dot layer, an electron-transport layer, and a cathode for injecting electrons into said transport layer, wherein the LED also comprises, between said hole- and electron-transport layers, at least one assembly formed by a phosphorescent light-emitting layer presenting an emission spectrum that covers at least part of an absorption spectrum of said quantum dots, and by a buffer layer separating said phosphorescent layer from said quantum dot layer, the material of said or each buffer layer presenting a forbidden band greater than that of a phosphorescent element of said phosphorescent layer so as to prevent excitons diffusing towards said quantum dot layer.

Abstract: A multi-chip light emitting device (LED) lamp for providing white light includes first and second broadband LED chips. The first LED chip includes a multi-quantum well active region having a first plurality of alternating active and barrier layers. The first plurality of active layers respectively include different relative concentrations of at least two elements of a first semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a first wavelength range. The second LED chip includes a multi-quantum well active region having a second plurality of alternating active and barrier layers. The second plurality of active layers respectively include different relative concentrations of at least two elements of a second semiconductor compound, and are respectively configured to emit light of a plurality of different emission wavelengths over a second wavelength range including wavelengths greater than those of the first wavelength range.

Abstract: In a vertical topology light emitting device, an adhesion layer or adhesion structure is provided between one of the electrodes and the metal contact pad associated with that electrode. The vertical topology light emitting device further comprises a support layer, a reflective structure, which also serves as the other electrode, over the support layer, and a semiconductor device including an n-type GaN-based layer, an active layer and a p-type GaN-based layer. In certain embodiments, the adhesion layer, or adhesion structure, may comprise two layers, for example, a Cr layer and an Au layer. In other embodiments, the vertical topology device may comprise an adhesion layer, or structure, between the reflective structure and the support structure.

Abstract: The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.

Abstract: In accordance with the invention, a light source for display and/or illumination is provided, the light source comprising a heterostructure including semiconductor layers, the heterostructure forming a waveguide between a first end and a second end, the heterostructure comprising a plurality of layers and comprising an optically active zone formed by the plurality of layers, the optically active zone capable of emitting light guided by said waveguide, at least two different radiative transitions being excitable in the optically active an electrical current between a p-side electrode and an n-side electrode, transition energies of said at least two different radiative transitions corresponding to wavelengths in the visible part of the optical spectrum, the light source further comprising means for preventing reflections of light from the waveguide by at least one of said first and second end back into the waveguide, thereby causing the light source to comprise a superluminescent light emitting diode.

Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Abstract: Nanocrystals having an indium-based core and methods for making them and using them to construct core-shell nanocrystals are described. These core-shell nanocrystals are highly stable and provide higher quantum yields than known nanocrystals of similar composition, and they provide special advantages for certain applications because of their small size.

Abstract: Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an acoustic field is applied to a fluid containing quantum dots, to cause the quantum dots to accumulate at locations which are adjacent to excitation sources, and then initiating a phase transition of the fluid to trap the quantum dots in the locations adjacent to the excitation sources. The quantum dots are illuminated during the process and the resulting fluorescence is optically monitored to provide indicators of quantum dot distribution in the fluid. These indicators are used as feedback for controlling aspects of the process, such as initiating the phase transition.

Abstract: Solid state lighting devices grown on semi-polar facets and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (“GaN”) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (“InGaN”)/GaN multi quantum well (“MQW”) active region directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN/GaN MQW, and P-type GaN materials is grown a semi-polar sidewall.

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract: A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24.

Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where ?15<x<?1 and 1<x<15 degrees.

Abstract: According to one embodiment, a semiconductor light emitting device, including a light emission portion including a first semiconductor layer with a first conductive type, a light emission layer on the first semiconductor layer, a second semiconductor layer with a second conductive type on the light emission layer and a transparent electrode on the second semiconductor layer, and a plurality of light outlet holes inside the light emission portion, the plurality of light outlet holes communicating with the first semiconductor layer from a surface side of the transparent electrode, at least a part of light emitted from the light emission layer being extracted from the plurality of the outlet holes to outside.

Abstract: The present invention is related to a light emitting diode device in which a fine prominence and depression is formed on a semiconductor layer to make an anti-reflection region. The light emitting diode device comprises, a substrate; a N-type semi-conductor layer; an active layer for generating light; P-type semiconductor layer; a first exposed region formed by etching the active layer and the P-type semiconductor layer to partly expose the N-type semiconductor layer; a first ohmic contact formed on the first exposed layer; a second ohmic contact formed on the P-type semiconductor layer, and having an opening to partly form a second exposed region on the P-type semiconductor layer, said second exposed layer being formed to partly have a ultra-fine prominence and depression.