Abstract: A light assembly, and an associated method, for illuminating a target. Light energy is generated by a plurality of LED light sources that are mounted on a substrate. Light energy generated by the LED light sources is caused to be projected towards a central focal area. The substrate is folded into a concave-shaped configuration, and the light energy generated by the LED lights is caused to be projected towards the central focal area, permitting focusing of the light energy.

Abstract: The problem of the present invention is to provide an organic thin film transistor insulating layer material capable of producing an organic thin film transistor having a small absolute value of threshold voltage and small hysteresis. The means for solving the problem is an organic thin film transistor insulating layer material comprising a macromolecular compound (A) containing repeating units having a fluorine atom-containing group, repeating units having a photodimerizable group and repeating units having a first functional group that generates a second functional group which reacts with active hydrogen by the action of electromagnetic waves or heat, and an active hydrogen compound (B).

Abstract: An LED semiconductor element including at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer, wherein the first active layer and the second active layer are electrically conductively connected by a contact zone.

Abstract: The embodiments of the disclosed technology provide a liquid crystal display, a thin film transistor array substrate and a method for manufacturing thin film transistor array substrate. The TFT array substrate comprises: a semiconductor layer, a source electrode and a drain electrode formed adjoining the semiconductor layer, a thin film transistor channel region being defined between the source electrode and the drain electrode; and an ohmic contact layer formed between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode, wherein the material of the semiconductor layer is zinc oxide (ZnO) and the material of the ohmic contact layer is GaxZn1?xO, where 0?x?1.

Abstract: A pixel structure and a manufacturing method thereof and a display panel are provided. An electrode material layer, a shielding material layer, an inter-layer dielectric material layer, a semiconductor material layer and a photoresist-layer are sequentially formed on a substrate. The semiconductor material layer, the inter-layer dielectric material layer, the shielding material layer and the electrode material layer are patterned using the photoresist-layer as a mask to form a semiconductor pattern, an inter-layer dielectric pattern, a shielding pattern and a pixel electrode. A source/drain electrically connected to the pixel electrode and covering a portion of the semiconductor pattern is formed on the pixel electrode. A channel is another portion of the semiconductor uncovered by the source/drain.

Abstract: An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity to the die-bonding area of the second die-bonding pad. The extension of the second die-bonding pad extends in proximity to the die-bonding area of the third die-bonding pad. A second dielectric layer disposed on the first patterned conductive layer includes three dielectric members corresponding respectively to the die-bonding pads of the first patterned conductive layer. Each dielectric member includes a chip-receiving hole exposing the die-bonding area of a respective die-bonding pad for attachment of an LED chip thereto, and a wire-passage hole spaced apart from the chip-receiving hole to expose partially the first patterned conductive layer for bonding a wire.

Abstract: The present disclosed technology is related to a TFT array substrate and a method for fabricating the TFT array substrate. The method may comprise: depositing a transparent conductive film layer and a source-drain metal layer in this order on a base substrate, and forming source electrodes, drain electrodes, data scan lines and transparent pixel electrodes by a first pattering process, with the transparent conductive film layer being left under the source electrodes, the drain electrodes and the data scan lines; on the resultant substrate, depositing a semiconductor layer and forming a patterned semiconductor layer by a second pattering process; and on the resultant substrate, depositing a gate insulator and a gate metal film in this order, and forming gate electrodes and gate scan lines by a third pattering process, the gate electrodes being located over the patterned semiconductor layer.

Abstract: A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature.

Abstract: The present invention discloses a liquid crystal display (LCD) panel and method for forming the same. In the LCD panel, the TFT includes a source and a drain formed by a transparent conducting layer, and a gate formed by a metal layer. The source is electrically connected with a data line through a via hole over the data line. The source connects to the drain via an active layer. Whatever the number of data lines are, each pixel corresponds to an associated via hole, so the number of via holes does not increase, and not reduce the aperture ratio. Therefore, the present invention is very proper to a design using more data lines and working in a high frequency. Moreover, the matrix circuitry of LCD of the present invention is well applied in a display which not only increases a density of data lines to raise the frame rate, but also maintains the aperture ratio and brightness.

Abstract: One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.

Abstract: A light emitting diode includes a substrate, a carbon nanotube layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on one side of the substrate in that order. The first semiconductor layer is adjacent to the substrate. The carbon nanotube layer is located between the first semiconductor layer and the substrate. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.

Abstract: A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer.

Abstract: A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer.

Abstract: A method for making a light emitting diode comprises the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is located on the epitaxial growth surface. Third, a first semiconductor layer, an active layer, and a second semiconductor layer is grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is electrically connected to the first semiconductor layer, and a second electrode electrically is connected to the second semiconductor layer.

Abstract: A light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layer stacked in that order; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer. The light emitting diode further includes a carbon nanotube layer. The carbon nanotube layer is enclosed in the interior of the first semiconductor layer. The carbon nanotube layer includes a number of carbon nanotubes.

Abstract: A light emitting diode includes a second electrode, a first semiconductor layer, an active layer, a second semiconductor layer, a reflector, and a first electrode. The second electrode, the first semiconductor layer, the active layer, the second semiconductor layer, and the reflector are stacked on the first electrode in that order. The first semiconductor layer defines a plurality of grooves on a surface contacting the second electrode. The plurality of grooves form a patterned surface used as the light extraction surface. A carbon nanotube layer is located on the patterned surface and embedded into the grooves.

Abstract: A method for making a light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is placed on the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer. Sixth, the carbon nanotube layer is removed.

Abstract: A light emitting device package includes a body, a first reflective cup and a second reflective cup disposed in a top surface of the body spaced from each other, a connection pad disposed in the top surface of the body spaced apart from the first reflective cup and the second reflective cup, a recess formed in the top surface of the body spaced apart from the first reflective cup, the second reflective cup, and the connection pad, a first semiconductor light emitting device disposed in the first reflective cup, a second semiconductor light emitting device disposed in the second reflective cup, and a Zener diode disposed in the recess, wherein the first reflective cup and the second reflective cup are recessed from the top surface of the body.

Abstract: A method of making a LED includes following steps. A substrate with an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A semiconductor epitaxial layer is grown on the epitaxial growth surface, and the semiconductor epitaxial layer includes an N-type semiconductor layer, an active layer, a P-type semiconductor layer. The semiconductor epitaxial layer is etched to expose part of the carbon nanotube layer. A first electrode is formed on a surface of the semiconductor epitaxial layer which is away from the substrate. A second electrode is formed to electrically connect with the part of the carbon nanotube layer which is exposed.

Abstract: A display panel according to the present invention includes a first substrate including a first electrode portion and a connecting portion electrically connecting the first electrode portion to an external interconnection; a second substrate including a second electrode portion and disposed to face the first substrate; and a common transfer material electrically connecting the first electrode portion and the second electrode portion. The second electrode portion includes a detecting portion for detecting damage to the second substrate. The detecting portion is electrically connected to the first electrode portion and the external interconnection through the common transfer material. By the configuration as described above, it becomes possible to easily detect cracking, chipping and the like in the second substrate having no direct connection to the external interconnection.

Abstract: Disclosed herein is a semiconductor light emitting device package including a body, first and second reflective cups disposed under a top surface of the body and spaced apart, a first connection pad disposed under the top surface of the body and spaced apart from the first and second reflective cups, a second connection pad disposed under the top surface of the body and spaced apart from the first and second reflective cups and the first connection pad, a first semiconductor light emitting device disposed within the first reflective cup, and a second semiconductor light emitting device disposed within the second reflective cup.

Abstract: A flexible liquid crystal display panel and method for manufacturing the same are provided. The flexible liquid crystal display panel includes a rigid substrate, a flexible substrate and a liquid crystal layer disposed therebetween.

Abstract: A LED package structure for increasing the light uniforming effect includes a substrate unit, a light emitting unit, a first package unit, and a second package unit. The substrate unit includes at least one substrate body. The light emitting unit includes at least one light emitting element disposed on the at least one substrate body and electrically connected to the at least one substrate body. The first package unit includes a first package resin body formed on the at least one substrate body to cover the at least one light emitting element. The second package unit includes a second package resin body formed on the at least one substrate body to cover the first package resin body. The second package resin body is a light uniforming resin body having a light diffusing material mixed therein, and the second package resin body has an exposed light uniforming surface formed thereon.

Abstract: The disclosed technology discloses a transflective array substrate and a transflective liquid crystal display. The array substrate comprises a plurality of pixel units, each of which comprises a reflective electrode and a transmissive electrode provided on a base substrate. An opaque gate line for shielding the light transmitted from the substrate to between reflective electrode and the transmissive electrode, the gate line is located between the reflective electrode and the transmissive electrode, and is located under the reflective electrode and the transmissive electrode; and a thin film transistor provided on the base substrate, a gate electrode of the thin film transistor is electrically connected to the gate line.

Abstract: A manufacturing method of liquid crystal display device is provided that can increase manufacturing yield by reducing the number of layers and manufacturing costs and by preventing backlight lamp failure. In the manufacturing method of the device, a semiconductor layer 4 and a pixel electrode 5 are formed on a gate insulating film 3. Subsequently, a drain electrode electrically interconnecting the semiconductor layer 4 and the pixel electrode 5 of the pixel region A is formed by overlaying a flat solid conductive film on the substrate, followed by removing the conductive film with the use of a photoresist pattern as a mask, while exposing the semiconductor layer 4 at the pixel region A and the adjacent area C. The semiconductor layer 4 at the pixel region A is etched by using, as an index, an etching amount of the semiconductor layer 4 at the adjacent area.

Abstract: The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

Abstract: Provided is a liquid crystal display including: a first substrate and a second substrate facing each other; a pixel electrode disposed on the first substrate; an opposing electrode disposed on the second substrate; a liquid crystal layer in vertical alignment mode interposed between the first substrate and the second substrate and including a plurality of liquid crystal molecules; and a tilt direction determining member determining tilt directions of the liquid crystal molecules when an electric field is generated in the liquid crystal layer, wherein the liquid crystal layer includes a first area and a second area in each of the first area and the second area, the liquid crystal molecules being aligned to have a pretilt without the electric field in the liquid crystal layer, and a pretilt angle of the liquid crystal molecules in the first area is larger a pretilt angle that of the liquid crystal molecules in the second area.

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: An electronic panel includes insulation films that cover metal wirings and have plated through holes which expose parts of the respective metal wirings, oxide semiconductor films that electrically conducted with the metal wirings via the plated through holes formed on the insulation films, and an electrical component that includes electrodes which are electrically connected to the oxide semiconductor films. The oxide semiconductor film includes first and second portions in which the widths thereof are different from each other. The width of the first portion is wider than the width of the second portion. A portion faces a part of the metal wiring which is exposed from the plated through hole, and the portion is electrically connected to the part of the metal wiring. At least a part of the second portion faces the electrode of the electrical component and is electrically connected to the electrode.

Abstract: A light-emitting thyristor includes a substrate, a first semiconductor multi-layered mirror of a first conductivity type that is formed on the substrate, a gate layer that is formed on the first semiconductor multi-layered mirror by stacking a plurality of semiconductor light-emitting layers having different peak values of an emission wavelength, and a second semiconductor multi-layered mirror of a second conductivity type that is formed on the gate layer.

Abstract: A liquid crystal display device includes a first substrate divided into a pixel part and first and second pad parts, a gate electrode and a gate line formed at the pixel part, an active pattern formed over the gate electrode with a first insulation film interposed therebetween, and having a width smaller than the gate electrode, an ohmic-contact layer formed on source and drain regions of the active pattern, source and drain electrodes formed over the gate electrode and electrically connected with the source and drain regions via the ohmic-contact layer, a data line formed on the pixel part and crossing the gate line to define a pixel region, a pixel electrode formed at the pixel region and electrically connected with the drain electrode, a second insulation film formed on the first substrate, and a second substrate attached to the first substrate.

Abstract: A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

Abstract: A light-emitting diode device and a method for manufacturing the same. In one embodiment, the light-emitting diode device comprises a substrate, an undoped semiconductor layer and a current blocking structure disposed on the substrate in sequence, a plurality of light-emitting structures, separately disposed on the current blocking structure, a plurality of insulating spacers, respectively located between the adjacent light-emitting structures, and a plurality of conductive wires. Each of the light-emitting structures has a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first electrode and a second electrode. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types. The plurality of conductive wires respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence.

Abstract: A plurality of gate lines formed on an insulating substrate, each gate line including a pad for connection to an external device; a plurality of data lines intersecting the gate lines and insulated from the gate lines, each data line including a pad for connection to an external device; and a conductor overlapping at least one of the gate lines and the data lines are included. An overlapping distance of the gate lines or the data lines and a width of the conductor decreases as the length of the gate lines or the data lines increases. Accordingly, the difference in the RC delays due to the difference of the length of the signal lines is compensated to be reduced.

Abstract: The present invention relates to a method for encapsulating a substrate, which comprises: (a1) providing a substrate with a plurality of chips mounted on a top side of the substrate; (b1) compressing a dry film photoresist on the top side of the substrate to form a photoresist layer; (c1) exposing the photoresist layer to a light source through a mask to form unexposed photoresist regions and exposed photoresist regions; (d1) developing the photoresist layer to uncover underlying portions of the unexposed photoresist regions; (e1) molding the top side of the substrate with a molding material; (f1) curing the molding material; and (g1) removing the unexposed photoresist regions from the substrate with a photoresist-removing agent.

Abstract: A display apparatus includes a first substrate including a first base substrate, a first pixel electrode disposed on the first base substrate, an insulating layer on the first pixel electrode, and a second pixel electrode disposed on the insulating layer and including a plurality of slits; a second substrate including a second base substrate opposite the first base substrate and on the first base substrate, and a reference electrode disposed on the second base substrate and facing the second pixel electrode; and a liquid crystal layer is disposed between the second pixel electrode and the reference electrode, the liquid crystal layer including liquid crystal molecules which are vertically aligned relative to the first and second substrates.

Abstract: A liquid crystal display includes a first substrate, a gate line and first and second data lines disposed on the first substrate, a first thin film transistor connected to the gate line and the first data line, a second thin film transistor connected to the gate line and the second data line, a color filter disposed on the first substrate, a protrusion disposed on the color filter, a first pixel electrode including a first linear electrode disposed on the protrusion and connected to the first thin film transistor, a second pixel electrode including a second linear electrode disposed on the protrusion and connected to the second thin film transistor, a second substrate disposed facing the first substrate, and blue phase liquid crystal disposed between the first substrate and the second substrate.

Abstract: A pixel structure, a driving method and a driving system of a hybrid display apparatus are provided. The pixel structure includes a scan line, a data line, a first active device, a first signal line, a second signal line, an electro-phoretic display device, a second active device and an organic light emitting diode device. The first active device is electrically connected to the scan line and the data line. The electro-phoretic display device is electrically connected to the first active device and the first signal line. The second active device is electrically connected to the first active device and the first signal line. The organic light emitting diode device is electrically connected to the second active device and the second signal line.

Abstract: An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on the gate insulating layer, an auxiliary pattern on the oxide semiconductor layer, and source and drain electrodes on the auxiliary pattern, the source and drain electrodes being disposed over the auxiliary pattern and spaced apart from each other to expose a portion of the auxiliary pattern, the exposed portion of the auxiliary pattern exposing a channel region and including a metal oxide over the channel region, wherein a data line crosses the gate line to define the pixel region and is connected to the source electrode, a passivation layer on the source and drain electrodes and the data line.

Abstract: A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first LED device and the second LED device are positioned on a common substrate. At least one polymer material is between the first LED device and the second LED device. A plurality of microsctructures are in the at least one polymer material. An interconnect is formed on top of the at least one polymer material to electrically connect the first electrode and the second electrode.

Abstract: A display panel and a display apparatus having the are provided. The display panel with a liquid crystal layer, includes first and second substrates which are disposed opposite to each other; a color filter polarizing layer which is formed on a surface of one of the first and second substrates between the first and second substrates, and includes a metal linear grid arranged at different pitches to emit a first polarized component of incident light with different colors; and a polarizing layer formed on an opposite surface to the surface of one of the first and second substrates. The provided display panel and display apparatus including the same, have decreased manufacturing costs and a simplified manufacturing process.

Abstract: A manufacturing method of a high-efficiency light-emitting diode (LED) is provided. A soft mold is used to transfer a microstructure or a nano-scale pattern thereon onto an imprinting material. The imprinting material is distributed all over an LED wafer; and the imprinting process may be performed through forward imprinting or reverse imprinting.

Abstract: A light-emitting element with which a reduction in power consumption and an improvement in productivity of a display device can be achieved is provided. A technique of manufacturing a display device with high productivity is provided. The light-emitting element includes an electrode having a reflective property, and a first light-emitting layer, a charge generation layer, a second light-emitting layer, and an electrode having a light-transmitting property stacked in this order over the electrode having a reflective property. The optical path length between the electrode having a reflective property and the first light-emitting layer is one-quarter of the peak wavelength of the emission spectrum of the first light-emitting layer. The optical path length between the electrode having a reflective property and the second light-emitting layer is three-quarters of the peak wavelength of the emission spectrum of the second light-emitting layer.

Abstract: An organic light-emitting display device. The organic light-emitting display device includes a substrate, a semiconductor layer arranged on the substrate, an insulating film arranged on the semiconductor layer and a conductive layer arranged on the insulating film, wherein the semiconductor layer comprises a plurality of protrusion lines extending in a first direction, the protrusion lines being parallel to a peripheral edge of the conductive layer.

Abstract: An optical device. The optical device comprises a GaN substrate having a non-polar surface region, an n-type GaN cladding layer, an n-type SCH layer comprised of InGaN, a multiple quantum-well active region comprised of five InGaN quantum well layers separated by four InGaN barrier layers, a p-type guide layer comprised of GaN, an electron blocking layer comprised of AlGaN, a p-type GaN cladding layer, and a p-type GaN contact layer.

Abstract: Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material.

Abstract: Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or l

Abstract: A light source module includes a receiving container, a first light source, a second light source, a first resin, and a second resin. The receiving container includes an upper surface, a first bottom surface, and a second bottom surface. The first bottom surface has a first depth from the upper surface. The second bottom surface has a second depth from the upper surface. The first light source is disposed on the first bottom surface. The first light source generates first color light. The second light source is disposed on the second bottom surface. The second light source generates second color light. The first resin is formed on the first light source. The first resin includes a phosphor emitting third color light. The second resin is formed on the first resin and the second light source.