Abstract: A display device structure includes an active device, a passivation layer, a pixel electrode and a first conductive material. The passivation layer covers the active device and has a first through hole exposing a portion of the active device. The pixel electrode is disposed on the passivation layer, and the pixel electrode is a non-thin-film electrode consituted by a plurality of micro-conductive structures or includes an organic conductive polymer material. The first conductive material is disposed around the first through hole and electrically connected to the exposed active device. The pixel electrode is electrically connected to the first conductive material.

Abstract: After the LEDs 2 (red LEDs (R), green LEDs (G) and blue LEDs (B), or white LEDs (W)) are mounted on the frame 3, without dicing the frame 3 for dividing the LEDs 2 into pieces, the tie bar is punched off to form an electric circuit. Thus, the RGB three primary color LED light source 1A or the white LED light source 1B that emits light in the state of the frame 3 can be manufactured.

Abstract: A lighting device is provided. The lighting device comprises a first substrate and a plurality of second substrates. The plurality of second substrates are separately and electrically connected to the first substrate and comprise a light emitting device.

Abstract: An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d1 and d2, respectively, and emit the polarized light having wavelengths ?1 and ?2, respectively, where the inequarities of ?1<?2 and d1<d2 are satisfied.

Abstract: An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer.

Abstract: A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided.

Abstract: A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer.

Abstract: When a columnar spacer is provided in a region overlapping with a TFT, there is a concern that pressure will be applied when attaching a pair of substrates to each other, which may result in the TFT being adversely affected and a crack forming. A dummy layer is formed of an inorganic material below a columnar spacer which is formed in a position overlapping with the TFT. The dummy layer is located in the position overlapping with the TFT, so that pressure applied to the TFT in a step of attaching the pair of substrates is distributed and relieved. The dummy layer is preferably formed of the same material as a pixel electrode so that it is formed without an increase in the number of processing steps.

Abstract: A display device including: a plurality of sub-pixels arranged in a matrix, each including an electro-optical element having a structure in which a display functional layer is sandwiched between an upper electrode and a lower electrode; and an auxiliary interconnect contact in a pixel area in which the plurality of sub-pixels are arranged in a matrix and electrically connecting the upper electrode to an auxiliary interconnect, wherein m (m is an integer equal to or larger than two) sub-pixels adjacent to each other along an arrangement direction of the sub-pixels are regarded as one group, and n (n is a natural number smaller than m) auxiliary interconnect contacts are formed for each group.

Abstract: In an active matrix type liquid crystal display device, a plurality of pixels connected to thin film transistors (TFTs) are arranged in an active matrix form in a pixel portion, and driven by a driver circuit portion. The pixel portion and the driver circuit portion are formed on one of a pair of insulating substrates. A liquid crystal material is interposed between the insulating substrates. An black matrix material made of an organic resin is formed over the one insulating substrate in which the driver circuit portion has been formed. An flat film is formed on the black matrix material.

Abstract: An organic light emitting diode display includes: a substrate; a display device formed on the substrate, and including a common power line and a common electrode; a sealing substrate attached to the substrate by a junction layer surrounding the display device, the sealing substrate sealing the display device with the substrate; a first conductor formed over an outer side, a lateral side, and an inner side of the sealing substrate, the first conductor being for supplying a first electrical signal to the common power line; a second conductor formed on the inner side, the lateral side, and the outer side of the sealing substrate, the second conductor being for supplying a second electrical signal to the common electrode; and a plurality of arranging members formed into the sealing substrate, the first conductor, and the second conductor, the arranging members being for arranging positions of the sealing substrate, the first conductor, and the second conductor.

Abstract: A two-transistor (2T) pixel comprises a chemically-sensitive transistor (ChemFET) and a selection device which is a non-chemically sensitive transistor. A plurality of the 2T pixels may form an array, having a number of rows and a number of columns. The ChemFET can be configured in a source follower or common source readout mode. Both the ChemFET and the non-chemically sensitive transistor can be NMOS or PMOS device.

Abstract: Provided are a liquid crystal display panel and an apparatus including the same, the liquid crystal display panel including: a first substrate which includes a first incident surface to receive light and a first emission surface to emit the light; a second substrate which includes a second incident surface to receive the light from the first emission surface of the first substrate, and a second emission surface to emit the light from the second incident surface, and spaced from the first substrate at an interval; a liquid crystal layer disposed between the first substrate and the second substrate; and a wire grid layer which is disposed in at least one of the first substrate and the second substrate and focuses and polarizes the light.

Abstract: The present invention provides a display device using a copper wiring and having high display properties in which without preventing a higher aperture ratio of the pixel, coloring of a screen due to reflected light of external light produced within the display device can be prevented. The display device according to the present invention is a display device including a plurality of pixel regions, wherein each of the pixel regions includes a copper wiring containing copper or an alloy thereof, and a red-colored layer and a colored layer of another color; and an area of the copper wiring is smaller in the pixel region including the red-colored layer than in the pixel region including the colored layer of another color, the area of the copper wiring reflecting incident light entering from the display surface side of the display device.

Abstract: A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.

Abstract: An array substrate for a field switching mode liquid crystal display device and a fabrication method thereof are provided. The array substrate for an FFS mode LCD device includes: a plurality of gate lines formed on the substrate; a plurality of data lines arranged to cross the gate lines; a common line formed at the subpixel regions of the substrate; an auxiliary common line formed on the common line; TFTs formed at crossings of the gate lines and the data lines; a protective film formed on the substrate; and a pixel electrode and a common electrode formed on the protective film and connected with the TFTs and the auxiliary common line, respectively.

Abstract: A white light electroluminescence device includes a first light emitting unit, a second light emitting unit and a connecting layer between the first and the second light emitting units. The connecting layer electrically connects the first and the second light emitting units in series. The first light emitting unit includes a first electrode layer and a first light emitting layer on the first electrode layer, wherein the first light emitting layer includes a first blue light emitting layer and a red light emitting layer having a first co-host material and a first dopant material. The second light emitting unit includes a second light emitting layer and a second electrode layer on the second light emitting layer, wherein the second light emitting layer has a second blue light emitting layer and a green light emitting layer having a second co-host material and a second dopant material.

Abstract: Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced.

Abstract: Disclosed is LCD device and a method of manufacturing the same, which increases a margin between the channel width and length (W/L) of a thin film transistor having a multi-gate structure, wherein the device comprises a substrate where a plurality of pixel regions are defined by a data line and a gate line; an active layer formed at each of a plurality of pixel regions of the substrate; a gate electrode comprising a plurality of multi-patterns overlapping with the active layer with an insulation layer therebetween; and a data electrode electrically connected to the active layer, wherein the multi-patterns are formed in straight by compensating pattern distortion of an edge portion of a gate pattern, and formed with the gate pattern which is designed to comprise a plurality of compensation patterns.

Abstract: A semiconductor device which can achieve an increase in ON current and which can also achieve a reduction in leak current and an active matrix substrate and a display device using such a semiconductor device are provided. In a switching element (semiconductor device) (18) having a top gate electrode (21)and a bottom gate electrode (23), this switching element includes a silicon layer (semiconductor layer) (SL) provided between the top gate electrode (21)and the bottom gate electrode (light-shielding film) (23)and having a source region (24), a drain region (28), a channel region (26), and low-concentration impurity regions (25 and 27). Furthermore, the bottom gate electrode (23)is provided below regions of the silicon layer (SL) that become depletion regions, and at the bottom gate electrode (23), the potential thereof is controlled so as to be a specified potential.

Abstract: A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.

Abstract: Provided are a display device and a method of manufacturing the same. The display device includes: a substrate divided into a display area and a peripheral area; a first metal wiring formed on the display area of the substrate; and a second metal wiring formed on the peripheral area of the substrate and including a gate driver. The first metal wiring is thicker than the second metal wiring.

Abstract: The laser diode is based on Al In Ga N alloy and consists of: a bottom cladding layer of n-type conductivity, a bottom waveguide layer of n-type conductivity, a light emitting layer, an electron blocking layer of p-type conductivity, an upper waveguide layer of p-type conductivity, an upper cladding layer of p-type conductivity and a subcontact layer, doped with acceptors with concentration level above 1020 cm?3. The diode characterizes in that its bottom cladding layer (1) of n-type is made of GaOxN1-x alloy in which x>0.0005. A method of fabricated such laser diode in epitaxial growth of a layer structure consisting of at least a bottom cladding layer of n-type conductivity comprising at least one GaOxN1-x layer (1, 1a, 1c) in which x>0.0005, consisting in that the GaOxN1-x layer (1a, 1c) is fabricated using a high pressure method of nitride solution in gallium at pressure higher than 800 MPa.

Abstract: A light emitting device is disclosed. In the light emitting device, the structure of a barrier layer of an active layer is changed, and a band gap energy of an intermediate layer is varied, thereby improving hole injection efficiency of the active layer and thus light emission efficiency.

Abstract: Disclosed herein are gallium nitride based light emitting diodes having interlayers with high dislocation density and a method of fabricating the same. The light emitting diode includes: a substrate; a buffer layer disposed on the substrate; an n-type contact layer disposed on the buffer; a p-type contact layer disposed on the n-type contact layer; an active layer interposed between the n-type contact layer and the p-type contact layer; a first lower semiconductor layer interposed between the buffer layer and the n-type contact layer; and a first interlayer interposed between the first lower semiconductor layer and the n-type contact layer, wherein the first interlayer has lower dislocation density than the buffer layer and higher dislocation density than the first lower semiconductor layer. This way, the interlayers with higher dislocation density prevent dislocations formed within the first lower semiconductor layer from being transferred to the n-type contact layer.

Abstract: An LED package includes: 2n lead frames (n is a natural number); n LED chips provided above the 2n lead frames, one terminal of each of the n LED chips being connected to each of the n lead frames, another terminal of each of the n LED chips being connected to each of other n lead frames; a wire connected between the terminal and one of the lead frames; and a resin body covering the n LED chips, the wire, and a part of each of the 2n lead frames. The each of the 2n lead frames includes; a base having an upper surface and side surfaces, the upper surface and the side surfaces being covered with the resin body; and a plurality of extending portions extending from the base, one of the extending portions having tip surface which is exposed at one side surface of the resin body, another of the extending portions having tip surface which is exposed at another side surface of the resin body, the one side surface and the another side surface being perpendicular to each other, and.

Abstract: An organic light emitting diode (OLED) display includes a first electrode including a conductive black layer, a second electrode facing the first electrode, and an organic emission layer provided between the first electrode and the second electrode.

Abstract: According to a method of manufacturing an optical matrix device of this invention, an extension-promoting pattern that promotes extension of droplets printed and coated is formed on an insulation film as a foundation layer where printing patterns are to be formed, whereby the droplets extend along the extension-promoting pattern. Moreover, an extension-inhibiting pattern is formed at end portions of the printing patterns as to intersect the printing patterns, i.e., the extension-promoting pattern, whereby the extension-inhibiting pattern stops extension of the droplets extending along the extension-promoting pattern. Accordingly, control may be made of positional accuracy of the liquid droplets.

Abstract: Embodiments of the invention are directed to quantum dot light emitting diodes (QD-LEDs) where the electron injection and transport layer comprises inorganic nanoparticles (I-NPs). The use of I-NPs results in an improved QD-LED over those having a conventional organic based electron injection and transport layer and does not require chemical reaction to form the inorganic layer. In one embodiment of the invention the hole injection and transport layer can be metal oxide nanoparticles (MO-NPs) which allows the entire device to have the stability of an all inorganic system and permit formation of the QD-LED by a series of relatively inexpensive steps involving deposition of suspensions of nanoparticles and removing the suspending vehicle.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

Abstract: A method of producing a liquid crystal display device according to the present invention includes: a step of providing a liquid crystal panel (110); a step of, through light irradiation while applying a voltage to a mixture via a check terminal (174) and a check line (172) on a rear substrate (130), forming from the mixture a liquid crystal layer (140) containing a liquid crystal compound and an alignment sustaining layer (150, 160) resulting through polymerization of a photopolymerizable compound; and a step of, after forming the liquid crystal layer (140) and the alignment sustaining layer (150, 160), applying a voltage across the liquid crystal layer (140) from the check terminal (172) to check the liquid crystal panel (110).

Abstract: A liquid crystal display and a method of forming the same are disclosed. The method of forming the liquid crystal display comprises: forming a gate electrode and a common electrode on a substrate; forming a gate dielectric, which covers the gate electrode and the common electrode, on the substrate; forming a channel layer, which covers the gate electrode, on the gate dielectric; forming a source electrode and a drain electrode which expose a portion of the channel layer; forming an organic layer, which contacts the exposed portion of the channel layer, on the source electrode and the drain electrode; patterning the organic layer contacting the channel layer so as to form an organic layer pattern comprising a first opening which exposes the channel layer; and forming an inorganic insulation layer which covers the channel layer exposed by the first opening.

Abstract: A gate line (40) has a two-layered structure comprising a lower gate line (40a) made of material identical to a pixel electrode (70), and positioned in the same layer as the pixel electrode (70), and an upper gate line (40b) layered on the lower gate line (40b), and made of material having a higher electrical conductivity than the transparent conductive material. According to this structure, it is possible to reduce the number of times performing exposure processes in manufacturing an in-plane switching type liquid crystal panel.

Abstract: In one embodiment, a liquid crystal display panel includes an array substrate and a counter substrate each having a display region and a peripheral region arranged adjacent to the display region. A resin layer is formed either one of the array substrate and the counter substrate. A protrusion in the shape of a wall is arranged on the resin layer with a gap between the protrusion and the substrate opposing the protrusion. A seal material is formed between the array substrate and the counter substrate, and arranged between a peripheral portion of the display region and the protrusion for attaching the array substrate and the counter substrate. A liquid crystal layer is formed in a surrounded region by the array substrate, the counter substrate and the seal material.

Abstract: An organic light emitting diode display is disclosed. The organic light emitting diode display includes: a substrate, an organic light emitting diode positioned on the substrate, a metal layer positioned on the substrate with the organic light emitting diode interposed therebetween, and a resin layer positioned on the metal layer and configured to reinforce a strength of the metal layer.

Abstract: A pixel structure of a display including a first substrate, a second substrate, and a liquid crystal (LC) layer disposed therebetween. The pixel structure comprises a plurality of first, second, and third sub-pixels; a plurality of alignment controlling patterns, respectively formed in the first, second and third sub-pixels for controlling alignment direction of LC molecules of the LC layer; a plurality of opaque regions, respectively formed in the first, second, and third sub-pixels, and substantially aligned with the portion of the alignment controlling patterns, so that the alignment controlling patterns are shielded by the substantially corresponded opaque regions having different areas in at least two of the colored sub-pixels.

Abstract: A light emitting diode, comprising: a transparent substrate; a wiring layer; and a semiconductor light emitting element structure part between the transparent substrate and the wiring layer, the semiconductor light emitting element structure part further comprising: a semiconductor light emitting layer; a transparent conductive layer provided on the wiring layer side of the semiconductor light emitting layer; a transparent insulating film; a metal reflection layer; and a first electrode part and a second electrode part provided on the wiring layer side of the transparent insulating film, to be electrically connected to the wiring layer, wherein the first electrode part is electrically connected to the first semiconductor layer via a first contact part which is provided to pass through the transparent insulating film, and the second electrode part is electrically connected to the second semiconductor layer by a second contact part provided to pass through the transparent insulating film, the transparent conduc

Abstract: A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 230 lumens per watt.

Abstract: The present invention provides methods for manufacturing a display panel and a display apparatus. The method comprises the following steps: sputtering alignment layers on substrates; forming a liquid crystal layer between the alignment layers to form a liquid crystal cell; applying a voltage to the liquid crystal cell; irradiating an ultraviolet light to the liquid crystal cell; and arranging the display panel on a backlight module. The invention can improve the quality of alignment films of the liquid crystal display panel.

Abstract: A thin film transistor array panel includes a source electrode and a drain electrode on an insulating substrate, an oxide semiconductor on the insulating substrate and overlapping the source electrode and the drain electrode, a passivation layer overlapping the oxide semiconductor and on the insulating substrate, a gate electrode on the passivation layer, and a pixel electrode connected to the drain electrode. The gate electrode and the pixel electrode include a same material. The oxide semiconductor is between the source electrode and the gate electrode, and between the drain electrode and the gate electrode in a cross-sectional view of the thin film transistor array panel.

Abstract: A liquid crystal display device (100) according to the present invention includes a vertical alignment type liquid crystal layer (3); and a pair of optical alignment films (12, 22). Each of a plurality of picture elements includes four liquid crystal domains (D1 through D4) having different tilt directions of liquid crystal molecules (3a) in the presence of an applied voltage. The four liquid crystal domains (D1 through D4) are arranged in a matrix of 2 rows×2 columns. The plurality of picture elements are an even number of picture elements including at least four picture elements for displaying different colors from each other, and include a first picture element of which a side parallel to a first direction has a prescribed first length L1 and a second picture element of which a side parallel to the first direction has a second length L2, which is different from the first length L1.

Abstract: An LED package structure with a deposited-type phosphor layer includes a substrate unit, a light-emitting unit and a package unit. The substrate unit includes at least one circuit substrate. The light-emitting unit includes a plurality of LED chips disposed on and electrically connected to the at least one circuit substrate. The package unit includes at least one package resin body formed by a mold structure. The at least one package resin body is formed on the at least one circuit substrate to cover the LED chips, and the at least one package resin body includes a continuous phosphor layer formed therein and deposited on outer surfaces of the LED chips by centrifugal force. Hence, the instant disclosure provides the continuous phosphor layer with the deposited phosphor powders for covering the outer surfaces of the LED chips, thus the light-emitting efficiency of the LED package structure can be increased actually.

Abstract: Disclosed are a mounting substrate for semiconductor light emitting elements, a backlight chassis containing the substrate, a display device and a television receiver. The substrate is easily manufactured and has a simple structure that allows good dissipation of heat from semiconductor light emitting elements, and can suppress temperature increases when mounted thereupon with a flip flop-type semiconductor light emitting element. A mounting substrate for semiconductor light emitting elements comprises a pair of electrode patterns that respectively connect the positive and negative electrodes of LED chips on an insulating substrate and wire patterns drawn between the electrode patterns. The pair of the electrode patterns have a larger surface area than the wire patterns. This allows heat from the LED chips to transfer favorably via the large electrode patterns to the insulating substrate. The mounting substrate is attached to a backlight chassis.

Abstract: Provided are a display substrate, a display device, and a method of manufacturing the display substrate. The display substrate includes: a substrate in which a pixel region is defined; a gate electrode and a gate pad are formed on the substrate; a gate insulating layer formed on the gate electrode and the gate pad; a buffer layer pattern overlaps the gate electrode and is formed on the gate insulating layer; an insulating film pattern formed on the buffer layer pattern; an oxide semiconductor pattern formed on the insulating film pattern; a source electrode formed on the oxide semiconductor pattern; and a drain electrode formed on the oxide semiconductor pattern and is separated from the source electrode.

Abstract: A liquid crystal display device includes: a first substrate; a first electrode on a first face of the first substrate; a second substrate opposed to the first substrate; a second electrode on a first face of the second substrate, the second electrode corresponding to the first electrode; and a liquid crystal structure between the first substrate and the second substrate, the liquid crystal structure including liquid crystal capsules.

Abstract: The present invention provides a method for forming a pixel element. The method comprises: forming a first patterned metal layer within the pixel area; forming an insulation layer on the first patterned metal layer; forming a semiconductor layer on the insulation layer; patterning the semiconductor layer to form bend seed generation portion; and forming a second metal layer to connect the semiconductor layer.

Abstract: A manufacturing method of a semiconductor device includes forming a pixel portion and a driving circuit including a semiconductor layer. A scan line in a pixel portion and a first wiring in a driving circuit are formed by patterning a first conductive layer, and a data line in the pixel portion and a second wiring in the driving circuit are formed by patterning a second conductive layer. The first wiring, a channel formation region of the semiconductor layer, and the second wiring are overlapped with each other.

Abstract: A method of fabricating an array substrate including forming a first metal layer; forming a gate insulating layer and an active layer; forming a second metal layer; forming a gate line, an etch-stopper and a gate electrode by patterning the first and second metal layers; forming an interlayer insulating layer including an opening, wherein the opening corresponds to the etch-stopper such that the opening is divided into first and second semiconductor contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact layers, a source electrode, a drain electrode and a data line, the first and second ohmic contact layers respectively contacting both sides of the active layer through the first and second semiconductor contact holes; removing an exposed portion of the etch-stopper; and forming a pixel electrode contacting the drain electrode.

Abstract: A liquid crystal display device includes gate and data lines defining a pixel region on a first substrate. A first insulating layer covers the gate line and a gate electrode. A thin film transistor, formed at a crossing region of the gate and data lines, has the gate electrode, a semiconductor layer, a source electrode, and a drain electrode. A red, green or blue color filter is formed over the first insulating layer in the pixel region. A drain contact hole exposes the drain electrode. A light-shielding color filter pattern including at least two of red, green and blue resins is formed over the semiconductor layer. A pixel electrode is formed over the color filter in the pixel region and contacts the drain electrode. A common electrode is formed on a second substrate facing the first substrate with a liquid crystal layer interposed between the common and pixel electrodes.

Abstract: An organic light emitting diode device comprises a first electrode, a second electrode facing the first electrode, a first light emitting unit and a second light emitting unit positioned between the first electrode and the second electrode, a charge generation layer positioned between the first light emitting unit and the second light emitting unit, and a charge balance layer positioned adjacent to charge generation layer and including a lithium-containing compound.