Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: Disclosed herein is a method for controlling the fluidity of a phosphor, a phosphor and a phosphor paste, the method comprising the steps of: treating the surface of a phosphor with a silane compound comprising a double bond; and polymerizing the monomer on the surface of the phosphor to form a polymer membrane thereon. The phosphor having the polymer membrane formed thereon exhibits significantly stabilized fluidity within a polymer encapsulant.

Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.

Abstract: A light emitting semiconductor device includes a base substrate; a light emitting semiconductor element including a crystal growth basis and provided on the base substrate so that the crystal growth basis faces in opposite direction to the base substrate; a first transparent sealing medium which seals the light emitting semiconductor on the base substrate; and a second transparent sealing medium which seals the light emitting semiconductor over the first transparent sealing medium and contains phosphor. A thickness of the second sealing medium in a portion with high emission intensity is larger than that of the other portion of the first sealing medium; and the portion with high emission intensity is defined as a portion where light emission intensity from the light emitting semiconductor element is maximum.

Abstract: A circuit substrate and at least one light-emitting diode (LED) chip are adhered to a heatsink substrate in sequence, and then a packaging material is formed on the LED chip. The circuit substrate has at least one through hole, and the LED chip is buried in the through hole on the circuit substrate so that the LED chip is in direct contact with the heatsink substrate, so as to reduce the thermal resistance between the LED chip and the heatsink substrate, thus effectively dissipating the heat energy of the LED chip through the heatsink substrate.

Abstract: A light-emitting device package having improved connection reliability of a bonding wire, heat dissipation properties, and light quality due to post-molding and a method of manufacturing the light-emitting device package. The light-emitting device package includes, for example, a wiring substrate having an opening; a light-emitting device that is disposed on the wiring substrate and covers the opening; a bonding wire electrically connecting a bottom surface of the wiring substrate to a bottom surface of the light-emitting device via the opening; a molding member that surrounds a side surface of the light-emitting device and not a top surface of the light-emitting device, which is an emission surface, is formed on a portion of a top surface of the wiring substrate, and is formed in the opening of the wiring substrate to cover the bonding wire; and a solder resist and a bump formed on the bottom surface of the wiring substrate.

Abstract: A method of manufacturing an LED lighting arrangement, comprises: receiving an optical component having a diffusing material that is light diffusive and at least one photoluminescent material that is excitable by light of a first wavelength range and which emits light of a second wavelength range; receiving an LED assembly that is operable to generate the light of the first wavelength range and mounting the optical component to the LED assembly to form the LED lighting arrangement. The optical component having the diffusing and photoluminescent materials is mass produced separately from the LED assembly and can be selected such that light generated by the optical component combined with the light generated by the LED assembly corresponds to light of a selected color. Also disclosed are LED lighting arrangements, components for LED lighting arrangements and methods of fabricating an optical component.

Abstract: A process is described for wavelength conversion of LED light using phosphors. LED dies are tested for correlated color temperature (CCT), and binned according to their color emission. The LEDs in each_bin are mounted on a single submount to form an array of LEDs. Various thin sheets of a flexible encapsulant (e.g., silicone) infused with one or more phosphors are preformed, where each sheet has different color conversion properties. An appropriate sheet is placed over an array of LED mounted on a submount, and the LEDs are energized. The resulting light is measured for CCT. If the CCT is acceptable, the phosphor sheet is permanently laminated onto the LEDs and submount. By selecting a different phosphor sheet for each bin of LEDs, the resulting CCT is very uniform across all bins.

Abstract: A packaging method of wafer level chips including following steps is provided. First, a plurality of chips attached on a first film is provided, and the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate. Then, a phosphor layer is respectively formed on at least one surface of each of the chips. Next, a second film is disposed on the phosphor layers, and the second film is opposite to the first film. Further, the first film is removed from the base surface of each of the chips. Then, the base surfaces of the chips are attached to the substrate. Afterward, each of the chips is electrically connected with the corresponding electrode pattern through a wire bonding. Finally, a packaging gel is provided to cover each of the chips, and the packaging gel is solidified.

Abstract: The present invention provides an LED and method of manufacture in which white light is produced. Specifically, under the present invention, a wavelength of a light output by an LED (e.g., blue or ultra-violet (UV)) is measured (e.g., at the wafer level). Based on the wavelength measurement, a conformal coating is applied to the LED. The conformal coating has a phosphor ratio that is based on the wavelength. Moreover, the phosphor ratio is comprised of at least one of the following colors: yellow, green, or red. The light output of the LED is then converted to white light using the conformal coating. In a typical embodiment, these steps are performed at the wafer level so that uniformity and consistency in results can be better obtained. However, it should be understood that the same teachings could be applied at the chip level. Moreover, several different approaches can be implemented for isolating the coating area. Examples include the use of a paraffin wax, a silk screen, or a photo resist.

Abstract: A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface is disposed. The fluorescent colloid layer is disposed outside the transparent encapsulant, wherein a chamber is formed between the fluorescent colloid layer and the transparent encapsulant. The light generated by the light emitting unit is reflected by the reflective surface and guided to a side wall of the fluorescent colloid layer.

Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.

Abstract: A light source includes a substrate, a light emitting diode on the substrate, and a phosphor layer over the light emitting diode. A plate is on the phosphor layer. An attachment member is coupled to the plate and is configured to conduct heat away from the plate.

Abstract: A housing for an optoelectronic component which includes a carrier with a chip mounting surface is disclosed. An optical element which is produced separately from the carrier is applied to the carrier. The chip mounting surface and the optical element define a parting plane, the parting plane between carrier and optical element being arranged in the plane of the chip mounting surface. Also disclosed is an optoelectronic component having a housing of this type and a method for producing an optoelectronic component of this type.

Abstract: For the production of a white LED having a predetermined color temperature, a blue LED (2a-2d) or a UV LED is coated with a conversion layer (5) which absorbs the blue light or UV light and emits light of greater wavelength. In accordance with the invention, the exact wavelength of the LED (2a-2d) is determined and the color conversion agent (5) is applied over this LED (2a-2d) in a quantity dependent upon the determined wavelength. Through this, the tolerance of the color temperature can be significantly reduced. The color conversion agent may be applied by means of dispenser or stamp, and the quantity and/or concentration selected in dependence upon the determined wavelength. Inkjet printing, deposition from the gas phase or selective removal by means of a laser is, however, also possible. The invention also relates to light sources produced in accordance with this method.

Abstract: A light emitting device package and a method for manufacturing the same are provided. The light emitting device package comprises a package body including a cavity disposed at an upper portion. The light emitting device package includes an insulating layer disposed on a surface of the package body. The light emitting device package includes a plurality of metal layers disposed on the insulating layer. The light emitting device package includes a light emitting device disposed in the cavity. The light emitting device package includes a first metal plate disposed at a rear surface of the package body at a location corresponding to the light emitting device.

Abstract: A package includes at least a chip encapsulated by an encapsulant. Conductive bumps are disposed on a first surface of the chip, for a circuit board to be disposed thereon. A phosphor layer is formed on a second surface of the chip opposing the first surface. The package further comprises a light-pervious mask that covers the phosphor layer. Since the phosphor layer and the light-pervious mask are directly formed on the chip, the chip is prevented from being disposed in the groove of the substrate. As a result, the wet etching process is omitted, and the fabrication cost is reduced. A method of fabricating the package is also provided.

Abstract: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.

Abstract: The invention relates to a yellow light afterglow material and a preparation method thereof as well as an LED illuminating device using the same. The yellow light afterglow material comprises the chemical formula of aY2O3.bAl2O3.cSiO2:mCe.nB.xNa.yP, where a, b, c, m, n, x and y are coefficients, and a is not less than 1 but not more than 2, b is not less than 2 but not more than 3, c is not less than 0.001 but not more than 1, m is not less than 0.0001 but not more than 0.6, n is not less than 0.0001 but not more than 0.5, x is not less than 0.0001 but not more than 0.2, and y is not less than 0.0001 but not more than 0.5; wherein Y, Al and Si are substrate elements, and Ce, B, Na and P are activators. The yellow light afterglow material is prepared by the following steps: weighing oxides of elements or materials which can generate oxides at high temperature by molar ratio as raw materials, evenly mixing and then sintering the raw materials at 1200-1700° in a reducing atmosphere.

Abstract: Light-emitting device packages which may be manufactured using post-molding and with improved heat emission performance and optical quality, and methods of manufacturing the light-emitting device packages. The light-emitting device package includes: a heat dissipation pad; a light-emitting device formed on the heat dissipation pad; a pair of lead frames disposed to be spaced apart from each other at both sides of the light-emitting device and the heat dissipation pad; a molding member surrounding the side of the light-emitting device except for an emission surface of the light-emitting device; and bonding wires for electrically connecting the lead frames to the light-emitting device.

Abstract: The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

Abstract: A light-emitting device package including: a package main body including a cavity and a lead frame including a mounting portion disposed in the cavity and a plurality of terminal portions; a light-emitting device chip mounted on the mounting portion; a plurality of bonding wires for electrically connecting the plurality of terminal portions and the light-emitting device chip; a light-transmitting encapsulation layer filled in the cavity; and a light-transmitting cap member disposed in the cavity and blocking the encapsulation layer to contact the plurality of bonding wires.

Abstract: A radiation detecting apparatus includes a scintillator, a plurality of photoelectric conversion elements, and a substrate having a first surface opposing the scintillator and a second surface opposite from the first surface. The substrate, the photoelectric conversion elements and the scintillator are arranged in this order from the side of the radiation detecting apparatus where radiation enters, and the second surface includes a plurality of depressions arranged in orthogonal projection areas where orthogonal projections of the plurality of projected photoelectric conversion elements are positioned and projections parts of which are positioned in the orthogonal projection areas and the remaining areas other than the parts of which are positioned between the orthogonal projection areas.

Abstract: A wafer level light-emitting device package may include a polymer layer that bonds a light-emitting structure to a package substrate, and the polymer layer and the package substrate may include a plurality of via holes. Also, a method of manufacturing the wafer level light-emitting device package may include forming the polymer layer on the light-emitting structure, bonding the package substrate onto the polymer layer by applying heat and pressure, and forming a plurality of via holes in the polymer layer and the package substrate.

Abstract: A semiconductor light emitting package includes a substrate, an encapsulating material, a semiconductor light emitting chip disposed on the substrate, wires; and an integrated glass-fluorescent powder compound light-emitting structure. The encapsulating material and the integrated glass-fluorescent powder compound light-emitting structure are packaged on the semiconductor light emitting chip, the integrated glass-fluorescent powder compound light-emitting structure is coated on the encapsulating material. The semiconductor light-emitting package has a large light-emitting area, high uniformity which can effectively avoid “halo” phenomenon, and long working life. The present invention also relates to a method for manufacturing semiconductor light emitting package, which can be implemented at low temperature and improve the reliability and the stability of the light-emitting property of the compound light-emitting structure.

Abstract: A method for manufacturing an LED (light emitting diode) with transparent ceramic is provided, which includes: adding quantitative fluorescent powder into transparent ceramic powder, wherein the doped ratio of the fluorescent powder is 0.01-100 wt %; preparing the fluorescent transparent ceramic using ceramic apparatus and process, after fully mixing the raw material; assembling the prepared fluorescent transparent ceramic and a semiconductor chip to form the LED device. The method assembles the fluorescent transparent ceramic and a semiconductor chip to form the LED device by replacing the fluorescent powder layer and the epoxy resin package casting of the traditional LED with fluorescent transparent ceramic. The fluorescent transparent ceramic is used as the package cast and fluorescent material, and the LED device manufactured through the method has more excellent performance.

Abstract: A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.

Abstract: A method and apparatus for depositing a phosphor via a compression molding process, the method involving forming a plurality of light-emitting devices on a wafer, evaluating emission characteristics of the plurality of light-emitting devices, and re-arraying and aligning the plurality of light-emitting devices on a carrier substrate according to the emission characteristics; depositing the phosphor on the plurality of re-arrayed light-emitting devices via a compression molding process; and dicing the plurality of re-arrayed light-emitting devices on the carrier substrate.

Abstract: Phosphor particles are provided in the form of spherical polycrystalline secondary particles consisting of a multiplicity of primary particles, including a garnet phase having the compositional formula: (A1-xBx)3C5O12 wherein A is Y, Gd, and/or Lu, B is Ce, Nd, and/or Tb, C is Al and/or Ga, and 0.002?x?0.2, the secondary particles having an average particle size of 5-50 ?m.

Abstract: A LED device includes a base structure having a receiving space, a light-emitting chip, an encapsulating structure, and a phosphor layer. The receiving space is defined by an inner bottom surface of the base structure and an inner side wall surrounding the inner bottom surface. The light-emitting chip is mounted on the bottom of the receiving space. The encapsulating structure is filled into the receiving space to cover the light-emitting chip. The phosphor layer is formed on the encapsulating structure. The dimension of the phosphor layer is more than the dimension of the receiving space and less than 1.5 times that of the receiving space, so as to mount on the top surface of the base structure.

Abstract: A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink.

Abstract: Provided is a light-emitting device which can reduce grainy texture, suppress color unevenness and luminance unevenness. A light-emitting device according to the present invention includes: a board; a plurality of light-emitting parts each of which includes (i) a LED chip mounted on the board and (ii) a phosphor-containing resin including a light wavelength converter and covering the LED chip. Further, the light-emitting device includes a light-guiding member provided on the board, between the light-emitting parts which are adjacent to each other. Furthermore, the light-guiding member is formed to cover part of the phosphor-containing resin.

Abstract: Disclosed herein is a display device, including: a substrate; a circuit part configured to include a drive element formed over the substrate; a planarization insulating layer configured to be formed on the circuit part; an electrically-conductive layer configured to be formed on the planarization insulating layer and include a plurality of first electrodes and an auxiliary interconnect; an aperture-defining insulating layer configured to insulate the plurality of first electrodes from each other and have an aperture through which part of the first electrode is exposed; a plurality of light emitting elements configured to be formed by stacking the first electrode, an organic layer including a light emitting layer, and a second electrode in that order; and a separator configured to be formed by removing the planarization insulating layer at a position surrounding a display area in which the plurality of light emitting elements connected to the drive element are disposed.

Abstract: In accordance with one aspect of the present disclosure, a light emitting device for producing radiation optimal for plant growth is provided. The light emitting device comprises at least one LED chip having a peak wavelength disposed on a support, a phosphor material radiationally coupled to the at least one LED chip. The phosphor materials are capable of absorbing at least a portion of the radiation from the at least one LED chip and emitting light of a second wavelength. The light emitting device further includes an optical element at least partially covering the at least one LED chip and support. The light emitting device is capable of uniformly mixing the red and blue radiation to produce pink radiation.

Abstract: A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode.

Abstract: Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The plurality of light-emitting chips may produce colors around a target color. The target color may be produced by combinations of the colors of light emitted from the plurality of light-emitting chips. The colors around the target color may have the same hue as the target color and have color temperatures different from that of the target color. The plurality of light-emitting chips may have color temperatures within about ±250K of that of the target color.

Abstract: A method of manufacturing a device based on LEDs includes the growth of semiconducting nanowires on a first electrode produced on an insulating face, and encapsulation thereof in planarising material; the formation, on the planarising material, of a second electrode with contact take-up areas. LEDs are formed by releasing a band of the first electrode around each take-up area, including forming a mask defining the bands on the second electrode, chemically etching the planarising material, stopped so as to preserve planarising material, chemically etching the portion of nanowires thus released, and then chemically etching the remaining planarising material. A trench is formed along each of the bands as far as the insulating face and the LEDs are placed in series by connecting the take-up areas and bands of the first electrode.

Abstract: A method and apparatus for depositing a phosphor using transfer molding. The method includes: forming a plurality of light-emitting devices on a wafer and rearranging the light-emitting devices on a carrier substrate according to luminance characteristics of the plurality of light-emitting devices by examining the luminance characteristics of the plurality of light-emitting devices; depositing the phosphor on the rearranged light-emitting devices using transfer molding; and separating the light-emitting devices on the carrier substrate.

Abstract: An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Abstract: A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively.

Abstract: According to one embodiment, an LED package includes a first lead frame and a second lead frame, an LED chip and a resin body. The resin body covers the LED chip and the top face, a part of the bottom face and a part of the end face, of each of the first and the second lead frames, and exposes the remaining part of the bottom face and the remaining part of the end face. The resin body includes a first part and a second part. The first part is disposed between the top face of the LED chip and a region immediately above the LED chip of the top face of the resin body and transmits light emitted by the LED chip. The second part surrounds the first part and has a transmittance of the light lower than a transmittance in the first part.

Abstract: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation.

Abstract: An apparatus having a substrate, an LED light source attached to the substrate, an electrical connector attached to the substrate and electrically connected to the LED light source, a potting material on the substrate and covering at least a portion of the electrical connector; and a barrier separating the potting material from the LED light source, the barrier having a height that exceeds the thickness of the potting material on the substrate.

Abstract: A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced.

Abstract: A light emitting device and a method of manufacturing thereof are disclosed. The light emitting device includes a light emitting element having first and second main surfaces opposed to each other; a wavelength converting part formed on the first main surface of the light emitting element; first and second terminals formed on the second main surface of the light emitting element; and a reflecting part formed to cover at least sides of the light emitting element and sides of the wavelength converting part. The light emitting device in which the color dispersion of white light is minimized with respect to the emitting direction of light, whereby the white light exhibits uniform characteristics and further, light emitting efficiency is improved is obtained.

Abstract: To constrain reductions in luminous efficacy while enhancing the color rendition index, the LED module includes a blue LED, at least one variety of phosphor particles excited by the outgoing light from the blue LED, and neodymium glass particles that include neodymium ions absorbing the outgoing light from the phosphor particles in a predetermined wavelength band.

Abstract: A method of manufacturing a light emitting device comprises: mounting and electrically connecting a plurality of solid-state light emitters onto a substrate in a known configuration; screen printing a pattern of at least one photo luminescent material onto a surface of a light transmissive carrier such that there is a respective region of photo luminescent material corresponding to a respective one of the light emitters and mounting the carrier to the substrate such that each region of photo luminescent material overlays a respective one of the light emitters. Where the light transmissive carrier comprises a thermo formable material the method can further comprise heating and vacuum molding the carrier such as to form an array of hollow features configured such that a respective feature corresponds to a respective light emitter and is capable of housing a respective light emitter.