Abstract: A broadband, omnidirectional, multi-layer, dielectric reflector for an LED in a white light emitting device provides both near 100% reflectivity across the visible spectrum of light, and electrical insulation between the substrate and the electrical circuitry used to power and control the LED. When a sealant material, having a higher index of refraction than air, is used to protect the LED and the accompanying electrical circuitry, an aluminum reflector layer or substrate is provided to make up for the loss of reflectivity at certain angles of incidence.

Abstract: A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract: A high efficiency light-emitting diode and a method for manufacturing the same are described. The high efficiency light-emitting diode comprises: a permanent substrate; a first contact metal layer and a second contact metal layer respectively deposed on two opposite surfaces of the permanent substrate; a bonding layer deposed on the second contact metal layer; a diffusion barrier layer deposed on the bonding layer, wherein the permanent substrate, the bonding layer and the diffusion barrier layer are electrically conductive; a reflective metal layer deposed on the diffusion barrier layer; a transparent conductive oxide layer deposed on the reflective metal layer; an illuminant epitaxial structure deposed on the transparent conductive oxide layer, wherein the illuminant epitaxial structure includes a first surface and a second surface opposite to the first surface; and a second conductivity type compound electrode pad deposed on the second surface of the illuminant epitaxial structure.

Abstract: There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.

Abstract: A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.

Abstract: A light emitting diode chip includes an electrically conductive substrate, a reflecting layer disposed on the substrate, a semiconductor structure formed on the reflecting layer, an electrode disposed on the semiconductor structure, and a plurality of slots extending through the semiconductor structure. The semiconductor structure includes a P-type semiconductor layer formed on the reflecting layer, a light-emitting layer formed on the P-type semiconductor layer, and an N-type semiconductor layer formed on the light-emitting layer. A current diffusing region is defined in the semiconductor structure and around the electrode. The slots are located outside the current diffusing region.

Abstract: A semiconductor light emitting diode (1, LED), comprising a first and a second electrode (40, 11) for applying a voltage across an active region (4) for generation of light, a light emitting surface (6), and a plurality of photonic crystals (101, 102). Further, at least two photonic crystals (101, 102) of a first and a second type are adapted to extract light from the active region (4) and differ from each other with respect to at least one lattice parameter. Each of said at least two photonic crystals (101, 102) are associated with a respective far field pattern, wherein an arrangement of said plurality of photonic crystals (101, 102) is provided to arrange said at least two photonic crystals (101, 102). In this manner, a far field pattern is created by combining the respective far field patterns associated with each of said at least two photonic crystals (101, 102).

Abstract: A thin-film LED includes an insulating substrate, an electrode on the insulating substrate, and an epitaxial structure on the electrode.

Abstract: Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor.

Abstract: An organic EL device in the present invention comprises a light-transmissive substrate 1, an organic light emitting layer 2, a light-transmissive electrode 3 disposed between the light-transmissive substrate 1 and the organic light emitting layer 2, and a light guiding layer 4 which is disposed between the substrate 1 and the light-transmissive electrode 3. The light guiding layer 4 is configured to alter light direction. The organic EL device is configured to emit light from the organic light emitting layer 2, and allow the light to propagate out through said light guiding layer 4, the light-transmissive electrode 3, and the light-transmissive substrate 1. The light guiding layer 4 includes a light dispersion layer 5. The light dispersion layer 5 is formed with a light dispersion region 8 and a light-transmissive region 9, which are arranged in a coplanar relation within said light dispersion layer 5. The light dispersion region 8 contains light dispersion particles 6 and a binder resin 7.

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

Abstract: Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a sub-mount including a cavity, a light emitting device chip provided in the cavity, an electrode electrically connected to the light emitting chip, a reflective layer formed on a surface of the cavity, a dielectric pattern on the reflective layer, and an encapsulant filled in the cavity.

Abstract: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: A photonic quantum ring (PQR) laser includes an active layer having a multi-quantum-well (MQW) structure and etched lateral face. The active layer is formed to be sandwiched between p-GaN and n-GaN layers epitaxially grown on a reflector disposed over a support substrate. A coating layer is formed over an outside of the lateral faces of the active layer, and upper electrode is electrically connected to an upper portion of the n-GaN layer, and a distributed Bragg reflector (DBR) is formed over the n-GaN layer and the upper electrode. Accordingly, the PQR laser is capable of oscillating a power-saving vertically dominant 3D multi-mode laser suitable for a low power display device, prevent the light speckle phenomenon, and generate focus-adjusted 3D soft light.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.

Abstract: A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.

Abstract: A semiconductor light emitting device, includes: a stacked structure unit including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode provided on a first major surface of the stacked structure unit on the second semiconductor layer side to connect to the first semiconductor layer; and a second electrode provided on the first major surface of the stacked structure unit to connect to the second semiconductor layer. The second electrode includes: a first film provided on the second semiconductor layer; and a second film provided on a rim of the first film on the second semiconductor layer. The first film has a relatively low contact resistance with the second semiconductor layer. The second film has a relatively high contact resistance with the second semiconductor layer.

Abstract: A method for fabricating an integrated optical interconnect includes disposing a layer over a substrate on which at least one optoelectronic transducer has been formed. A groove is formed in the layer in alignment with the optoelectronic transducer. A slanted mirror is formed in the layer at an end of the groove adjacent to the optoelectronic transducer to direct light between the optoelectronic transducer and an optical fiber placed in the groove.

Abstract: An exemplary light emitting diode (LED) package includes a substrate having a first electrical portion and a second electrical portion formed thereon, two antioxidation layers formed on and electrically connected to the first electrical portion and the second electrical portion, respectively, and an LED chip disposed on the substrate and electrically connected to the two antioxidation layers.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

Abstract: A light emitting element and a light emitting device for which light extraction efficiency is enhanced are provided. A light emitting element 10 includes a substrate 1 having light transmittance, a semiconductor layer 2 in which an n-type layer 2a, an active layer 2b, and a p-type layer 2c are stacked, a reflective electrode 3 stacked on the semiconductor layer 2 and configured to reflect light emitted from the active layer 2b, toward the substrate 1, a p-side pad electrode 4 stacked on the reflective electrode 3, an insulating film 6 covering a side surface of the semiconductor layer 2 and having light transmittance, a reflective film 7 stacked on the insulating film 6 and having light reflectivity, and an n-side electrode 5 provided on the substrate 1.

Abstract: A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.

Abstract: A display substrate includes a base substrate, a first dielectric layer, a first lattice pattern, a second lattice pattern, and a second dielectric layer. The first lattice pattern is disposed on the first dielectric layer at a first color pixel region. The first lattice pattern includes a plurality of first nano metal wires. The second lattice pattern is disposed on the first dielectric layer at a second color pixel region. The second lattice pattern includes a plurality of second nano metal wires. The second nano metal wires have different dimensions from the first nano metal wires. The second dielectric layer covers the first nano metal wires and the second nano metal wires.

Abstract: An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes a first substrate, a gate electrode formed on the first substrate, a gate insulating layer formed on the gate electrode, a semiconductor formed on the gate insulating layer, a source electrode and a drain electrode formed on the semiconductor, a second substrate that faces the first substrate, and a light blocking member formed on the second substrate, and the semiconductor includes a metal oxide semiconductor and the light blocking member is not formed in a region corresponding to at least a portion of the semiconductor.

Abstract: Blue organic EL elements, which have a shorter lifetime and lower luminance characteristics than green and red ones, have had a problem: particularly when blue elements are used in a light-emitting device capable of modulating light emission colors, light significantly attenuates and characteristics further deteriorates. A dielectric mirror which is selective in wavelength is provided between organic EL elements, and the number of times especially blue light emission from an organic EL element is transmitted through an electrode having a light-transmitting property is reduced as much as possible, so that attenuation of light is suppressed. Thus, a light-emitting device capable of modulation of light emission colors which has a high luminance and a long lifetime can be provided. In the light-emitting device, voltages applied to the organic EL elements, which deteriorate individually, are separately controlled, whereby the color tone can be kept constant for a long period.

Abstract: Disclosed herein is a light emitting device including: an organic layer sandwiched between a first electrode and a second electrode to serve as an organic layer including a light emitting layer for emitting monochromatic light at one location; a first light reflection boundary face provided on a side close to the first electrode to serve as a boundary face for reflecting light emitted from the light emitting layer so as to radiate the reflected light from a side close to the second electrode; and a second light reflection boundary face, a third light reflection boundary face and a fourth light reflection boundary face which are sequentially provided at positions separated away from each other in a direction from the first electrode to the second electrode on the side close to the second electrode.

Abstract: A lighting apparatus is provided with a plurality of light-emitting devices, a substrate, a blind member, and a reflector. The reflector is formed with a plurality of reflective surfaces corresponding to the light-emitting devices, individually. The shielding angle at which light emitted from that one of the light-emitting devices which is located on the outermost periphery is intercepted by the reflective surface corresponding to the outermost light-emitting device is greater than shielding angles at which light emitted from the light-emitting devices located inside the outermost light-emitting device is intercepted by the reflective surfaces corresponding to the inside light-emitting devices.

Abstract: The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

Abstract: A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned over the upper surface in a periodic manner, a first conductive type semiconductor layer positioned over the substrate, a light-emitting structure positioned over the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned over the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.

Abstract: A light emitting diode (LED) includes a substrate, an electrode structure positioned on the substrate, an LED component electrically connected to the electrode structure, and a lens structure positioned on the substrate and covering the LED component. The lens structure includes a rugged structure adjacent to the substrate; the roughness of the rugged structure decreases gradually along a direction from a center of the lens structure center toward a peripheral edge thereof. The present disclosure also provides a method for manufacturing the LED light source.

Abstract: A light emitting diode array is described. The array includes a first light emitting diode with a first electrode and a second light emitting diode with a second electrode. The second light emitting diode is separated from the first light emitting diode. A first dielectric layer is positioned between the first light emitting diode and the second light emitting diode. An interconnect is located at least partially on the first dielectric layer that connects the first electrode to the second electrode. A second dielectric layer is formed over the first dielectric layer and the interconnect. A reflective layer is formed over the second dielectric layer. A permanent substrate is coupled to the reflective layer.

Abstract: According to an embodiment of the present invention, a semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, an electrode layer disposed under the light emitting structure, an electrode disposed on the light emitting structure, a conductive support member disposed under the electrode layer, a conductive layer disposed between the light emitting structure and the conductive support member, and an insulating layer disposed between the conductive support member and the light emitting structure, wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure, and wherein the conductive layer includes a different material from the electrode layer.

Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

Abstract: An LED package includes an LED die and a lens module. The lens module covers the LED die. Light emitted from the LED die travels through the lens module. The lens module includes a concave lens and a convex lens with a smaller radial dimension than that of the concave lens. The concave lens covers the LED die. The convex lens is attached on a center of a surface of the concave lens away from the LED die. Optical axes of the concave lens and the convex lens are both collinear with a central axis of the LED die. Light from the LED die is diverged by the lens module to a peripheral side of the LED package.

Abstract: A light emitting device package is provided. The light emitting device package may include a housing including a cavity, a light emitting device disposed within the cavity, a filler filled in the cavity in order to seal the light emitting device, a fluorescent layer disposed on the filler, and an optical filter being disposed within the filler and transmitting light with a particular wavelength.

Abstract: A high efficiency photonic-crystal light emitting diode comprises a flip-chipped stack of AlxInyGa1-x-yN layers, where 0?x, y, x+y?1. Each layer has a high crystalline quality, with a dislocation density below about 105 cm?2. The backside of the stack, exposed by removal of the original substrate, has a photonic crystal pattern for improved light extraction.

Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a growth substrate, a first conductive semiconductor layer on the growth substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and an ohmic contact layer having a concavo-convex structure on the second conductive semiconductor layer.

Abstract: A light-emitting device includes a light emitting structure comprising a lower layer of the first conductivity type, an active layer, an upper layer of the second conductivity type, a first electrode connected to the lower layer of the first conductivity type, a second electrode connected to the upper layer of the second conductivity type, and an optical member seeded in the light emitting structure. The optical member can include a plurality of particles substantially transparent and having a lower refractive index than the light emitting structure. A plurality of discontinuities are formed at the boundary of the optical member in the light emitting structure.

Abstract: An LED includes a base, an LED chip, a first electrode, a second electrode, an encapsulating layer, and a reflective layer. The base forms a concave recessed from a top face thereof and a recess above the concave. The reflective layer is attached on the concave. The LED chip is received in the recess and located over the reflective layer. The LED chip has a light output face facing towards the reflective layer. The encapsulating layer is filled in the recess to cover the reflective layer and encapsulate the LED chip. The reflective layer includes a first reflective layer and a second reflective layer. The first reflective layer is located at a center of the concave. The second reflective layer surrounds and connects the first reflective layer. The first reflective layer has a curvature smaller than that of the second reflective layer.

Abstract: A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.

Abstract: To provide a package for light emitting element accommodation that realizes enhanced reflectance without application of a metal plating onto a ceramic. There is provided a package for light emitting element accommodation comprising ceramic substrate (2) having conductor mounting region (8) for mounting of light emitting element (1) on its upper surface; frame (4) of a light reflecting material containing 74.6 mass % or more of alumina whose average particle diameter after sintering is 2.5 ?m or less, the frame (4) disposed on an upper surface of the substrate (2) in such a fashion that internal circumferential surface (7) of through-hole (3) expands outward; and light emitting element (1) mounted on the conductor mounting region (8) of the substrate (2). Thus, the reflectance of the frame (4) is enhanced without application of a metal plating thereonto.

Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.

Abstract: A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Abstract: An anisotropic conductive film is provided that does not have a light-reflecting layer on a light emitting diode element which causes costs to increase when a light emitting device that uses an LED element is flip-chip mounted, and that does not cause emission efficiency to deteriorate. Further, a light emitting device that uses such an anisotropic conductive film is provided. This anisotropic conductive film has a structure in which a light-reflecting insulating adhesive layer and an anisotropic conductive adhesive layer are laminated, wherein the light-reflecting insulating adhesive layer has a structure in which light-reflecting particles are dispersed in an insulating adhesive. The light emitting device has a structure in which a light emitting diode element is flip-chip-mounted on a substrate, with this anisotropic conductive film provided between a connection terminal on the substrate and a bump for connection of the light emitting diode element.

Abstract: A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A reflective structure is formed on the light emitting structure and includes a nano-rod layer comprised of a plurality of nano-rods and air filling space between the plurality of nano-rods and a reflective metal layer formed on the nano-rod layer.