Abstract: A ferroelectric capacitor comprises two conductive capacitor electrodes having ferroelectric material there-between. At least one of the capacitor electrodes comprise MxSiOy, where “M” is at least one of Ru, Ti, Ta, Co, Pt, Ir, Os, Mo, V, W, Sr, Re, Rh, Pd, La, Zn, In, Sig, and Nb, Other aspects, including method, are disclosed.

Abstract: A memory device, transistor, and methods of making the same, the memory device including a memory cell including: a bottom electrode layer; a high-k dielectric layer disposed on the bottom electrode layer; a discontinuous seed structure comprising discrete particles of a metal disposed on the high-k dielectric layer; a ferroelectric (FE) layer disposed on the seed structure and directly contacting portions of high-k dielectric layer exposed through the seed structure; and a top electrode layer disposed on the FE layer.

Abstract: A plurality of memory cells in a cross-point array in which the memory cell stacks in the cross-points include a switch element, a conductive barrier layer, and a confined cell structure in series, and having sides aligned within the cross-point area of the corresponding cross-point, the confined cell structure including surfactant spacers within the cross-point area having outside surfaces on a pair of opposing sides of the stack, and a body of programmable resistance memory material confined between inside surfaces of the surfactant spacers. The memory cells can be operated as multi-level cells in a 3D array.

Abstract: Provided are a metal chalcogenide thin film and a method and device for manufacturing the same. The metal chalcogenide thin film includes a transition metal element and a chalcogen element, and at least one of the transition metal element and the chalcogen element having a composition gradient along the surface of the metal chalcogenide thin film, the composition gradient being an in-plane composition gradient. The metal chalcogenide thin film may be prepared by using a manufacturing method including providing a transition metal precursor and a chalcogen precursor on a substrate by using a confined reaction space in such a manner that at least one of the transition metal precursor and the chalcogen precursor forms a concentration gradient according to a position on the surface of the substrate; and heat-treating the substrate.

Abstract: A semiconductor memory device includes a first electrode and a second electrode, a phase change layer disposed between the first electrode and the second electrode, and a first layer disposed between the first electrode and the phase change layer. The phase change layer contains at least one of germanium (Ge), antimony (Sb), and tellurium (Te). The first layer contains aluminum (Al) and antimony (Sb), or tellurium (Te) and at least one of zinc (Zn), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), and lutetium (Lu).

Abstract: A three-dimensional semiconductor integrated circuit includes a first CMOS circuit layer including a plurality of first CMOS circuit blocks; an insulating layer disposed on a top of the first CMOS circuit layer; a plurality of atomic switching elements respectively disposed inside via holes extending through the insulating layer, wherein the plurality of atomic switching elements are electrically connected to the plurality of first CMOS circuit blocks, respectively; a driver circuit layer disposed on a top of the insulating layer, and electrically connected with the atomic switching elements, wherein the driver circuit layer include a driver circuit for selectively turning on and off the atomic switching elements; and a second CMOS circuit disposed on a top of the driver circuit layer and connected to the atomic switching elements.

Abstract: A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 ?s to about 54 ?s.

Abstract: An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent.

Abstract: A method is presented for integrating an electronic component in back end of the line (BEOL) processing. The method includes forming a first electrode over a semiconductor substrate, forming a first electrically conductive material over a portion of the first electrode, and forming a second electrically conductive material over the first electrically conductive material, where the first and second electrically conductive materials define a p-n junction. The method further includes depositing a second electrode between a set of spacers and in direct contact with the p-n-junction, depositing a phase change material over the p-n junction and in direct contact with the second electrode, and forming a third electrode over a portion of the phase change material.

Abstract: The resistance change memory device including a first resistance change memory element, a second resistance change memory element, and a memory controller is provided. The first resistance change memory element is disposed on a chip. The second resistance change memory element is disposed on the same chip. The memory controller is disposed on the same chip. The memory controller is configured to control data access of the first resistance change memory element and the second resistance change memory element. An accessing frequency of the first resistance change memory element is different from an accessing frequency of the second resistance change memory element.

Abstract: The disclosure relates to a memory cell formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of a semiconductor, the memory cell comprising a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element, the gate being formed on the active layer and having a lateral flank covered with a second insulating layer, the variable-resistance element being formed by a layer of variable-resistance material, deposited on a lateral flank of the active layer in a first trench formed through the active layer along the lateral flank of the gate, a trench conductor being formed in the first trench against a lateral flank of the layer of variable-resistance material.

Abstract: An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

Abstract: An alloy of GexSbySezTem includes atoms of Ge, Sb, Se, and Te that form a crystalline structure having a plurality of vacancies randomly distributed in the crystalline structure. The alloy can be used to construct an optical device including a first waveguide to guide a light beam and a modulation layer disposed on the first waveguide. The modulation includes the alloy of GexSbySezTem which has a first refractive index n1 in an amorphous state and a second refractive index n2, greater than the first refractive index by at least 1, in a crystalline state. The first waveguide and the modulation layer are configured to guide about 1% to about 50% of the light beam in the modulation layer when the alloy is in the amorphous state and guide no optical mode when the alloy is in the crystalline state.

Abstract: A semiconductor structure includes stack structures. Each of the stack structures comprises a first conductive material, a chalcogenide material over the first conductive material, a second conductive material over the chalcogenide material, and a first dielectric material between the chalcogenide material and the first conductive material and between the chalcogenide material and the second conductive material. The semiconductor structure further comprises a second dielectric material on at least sidewalls of the chalcogenide material. The chalcogenide material may be substantially encapsulated by one or more dielectric materials. Related semiconductor structures and related methods are disclosed.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bottom electrode having a first width and a dielectric structure having a second width formed over the bottom electrode. The semiconductor structure further includes a top electrode having a third width formed over the dielectric structure. In addition, the second width of the dielectric structure is greater than the first width of the bottom electrode.

Abstract: A method is presented for integrating an electronic component in back end of the line (BEOL) processing. The method includes forming a first electrode over a semiconductor substrate, forming a first electrically conductive material over a portion of the first electrode, and forming a second electrically conductive material over the first electrically conductive material, where the first and second electrically conductive materials define a p-n junction. The method further includes depositing a second electrode between a set of spacers and in direct contact with the p-n-junction, depositing a phase change material over the p-n junction and in direct contact with the second electrode, and forming a third electrode over a portion of the phase change material.

Abstract: Systems and methods for providing a one-time programmable chalcogenide-based memory with improved memory cell IV characteristics are described. The memory cells of the one-time programmable chalcogenide-based memory may include a chalcogenide-based material. The chalcogenide-based material may comprise a germanium-antimony-tellurium compound (GST), a chalcogenide glass, or a chalcogenide alloy such as Ge10Se54As36 or Ge17Te50As33. The chalcogenide-based memory may be written as a one-time programmable memory in which forming operations are performed on only memory cells that are to be programmed to store a first binary value (e.g., binary “1” data values) and not performed on other memory cells that are to store a second binary value different from the first binary value (e.g., binary “0” data values).

Abstract: The resistance change memory device including a first resistance change memory element, a second resistance change memory element, and a memory controller is provided. The first resistance change memory element is disposed on a chip. The second resistance change memory element is disposed on the same chip. The memory controller is disposed on the same chip. The memory controller is configured to control data access of the first resistance change memory element and the second resistance change memory element. An accessing frequency of the first resistance change memory element is different from an accessing frequency of the second resistance change memory element.

Abstract: Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

Abstract: Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.

Abstract: A self-align method of preparing semiconductor gates for formation of a silicide, such as a cobalt silicide (CoSi) layer, is disclosed. Deposition of silicon nitride (SiN) and low-temperature oxide (LTO) liner types, the SiN liner having an overhang structure, prevent damage to the gates while forming a self-aligned source. The undamaged gates are suitable for CoSi deposition.

Abstract: A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow.

Abstract: An electrically actuated device comprises an active region disposed between a first electrode and a second electrode, a substantially nonrandom distribution of dopant initiators at an interface between the active region and the first electrode, and a substantially nonrandom distribution of dopants in a portion of the active region adjacent to the interface.

Abstract: According to one embodiment, an information recording device includes first and second electrodes, a variable resistance layer between the first and second electrodes, and a control circuit which controls the variable resistance layer to n (n is a natural number except 1) kinds of resistance. The variable resistance layer comprises a material filled between the first and second electrodes, and particles arranged in a first direction from the first electrode to the second electrode in the material, and each of the particles has a resistance lower than that of the material. A resistance of the variable resistance layer is decided by a short between the first electrode and at least one of the particles.

Abstract: A memory cell includes a first resistive switching device having a first terminal and a second terminal, a switching device having a first terminal and a second terminal, and an access device having a first access terminal and a second access terminal. The first access terminal is coupled to the first terminal of the first resistive switching device and the first terminal of the switching device.

Abstract: Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.

Abstract: A self-align method of preparing semiconductor gates for formation of a silicide, such as a cobalt silicide (CoSi) layer, is disclosed. Deposition of silicon nitride (SiN) and low-temperature oxide (LTO) liner types, the SiN liner having an overhang structure, prevent damage to the gates while forming a self-aligned source. The undamaged gates are suitable for CoSi deposition.

Abstract: A method is provided for fabricating a phase change memory. The method includes providing a semiconductor substrate having a bottom electrode connecting with one or more semiconductor devices, and forming a first dielectric layer on the semiconductor substrate. The method also includes forming a loop-shape electrode in the first dielectric layer, and forming a second dielectric layer having a first opening exposing a portion of the first dielectric layer and a portion of the loop-shape electrode. Further, the method includes forming a phase change layer in the first opening of the second dielectric layer such that a contact area between the phase change layer and the loop-shape electrode may be controlled to achieve desired contact, and forming a top electrode.

Abstract: An electronic device includes a first electrode and a second electrode. The device also includes a resistive material between the first and second electrodes. An active material is between the first electrode and the resistive material. The active material is in electrical communication with the first electrode and the active material is in electrical communication with the second electrode through the resistive layer.

Abstract: A phase-change memory device and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate in which a word line is arranged, a diode line disposed over the word line and extending parallel to the word line, a phase-change line pattern disposed over the diode line, and a projection disposed between the diode line and the phase-change line pattern and protruding from the diode line. The diode line and the projection are formed of a single layer to be in continuity with each other.

Abstract: Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient.

Abstract: A memory device includes a plurality of side-wall electrodes formed on a first side-wall of a trench within an insulating layer over a first plurality of contacts in an array of contacts in a substrate. The plurality of side-wall electrodes contact respective top surfaces of the first plurality of contacts. The side-wall electrodes respectively comprise a layer of tantalum nitride, having a composition TaxNy, where y is greater than x, and a layer of electrode material having a lower electrical resistivity and a lower thermal resistivity than the layer of tantalum nitride. Top surfaces of the plurality of side-wall electrodes contact memory material. A second plurality of side-wall electrodes may be formed on a second side-wall of the trench over a second plurality of contacts in the array of contacts.

Abstract: A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method.

Abstract: A memory device includes an array of contacts and a patterned insulating layer over the array of contacts. The patterned insulating layer includes a trench. The trench includes a sidewall aligned over a plurality of contacts in the array. A plurality of bottom electrodes on a lower portion of the sidewall contacts respective top surfaces of the contacts in the plurality of contacts. A thermally confined spacer of memory material between the patterned insulating layer and an insulating fill material is formed on an upper portion of the sidewall in contact with the plurality of bottom electrodes.

Abstract: In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.

Abstract: A resistive random access memory cell formed in an integrated circuit includes first and second resistive random access memory devices, each including an anode and a cathode. The anode of the second resistive random access memory device is connected to the anode of the first resistive random access memory device. A programming transistor has a first source/drain terminal connected to a programming potential node, a second source/drain terminal connected to the anodes of the first and second resistive random access memory devices, and a gate connected to a program-enable node.

Abstract: Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend along a second direction that intersects the first direction. The electrically conductive lines interconnect the pillars along the second direction. Some embodiments include a memory array having first electrically conductive lines extending along a first direction. The lines contain n-type doped regions of semiconductor material. Pillars are over the first conductive lines and contain mesas of the n-type doped regions together with p-type doped regions and ovonic material. Second electrically conductive lines are over the ovonic material and extend along a second direction that intersects the first direction.

Abstract: MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a barrier height modification layer, a low leakage dielectric layer and a high leakage dielectric layer. The layers can be sandwiched between two electrodes.

Abstract: A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.

Abstract: According to one embodiment, a memory device includes first and second conductive layers, a variable resistance portion, and a multiple tunnel junction portion. The variable resistance portion is provided between the first and second conductive layers. The multiple tunnel junction portion is provided between the first conductive layer and the variable resistance portion, and includes first, second, and third tunnel insulating films, and first and second nanocrystal layers. The first nanocrystal layer between the first and second tunnel insulating films includes first conductive minute particles. The second nanocrystal layer between the second and third tunnel insulating films includes second conductive minute particles.

Abstract: Memory cells having heaters with angled sidewalls and methods of forming the same are described herein. As an example, a method of forming an array of resistive memory cells can include forming a first resistive memory cell having a first heater element angled with respect to a vertical plane, forming a second resistive memory cell adjacent to the first resistive memory cell and having a second heater element angled with respect to the vertical plane and toward the first heater, and forming a third resistive memory cell adjacent to the first resistive memory cell and having a third heater element angled with respect to the vertical plane and away from the first heater element.

Abstract: Some embodiments include methods of forming memory cells in which a metal oxide material is formed over a first electrode material, an oxygen-sink material is formed over and directly against the metal oxide material, and a second electrode material is formed over the oxygen-sink material. The second electrode material is of a different composition than the oxygen-sink material. The metal oxide material is treated to transfer oxygen from a region of the metal oxide material to the oxygen-sink material and thereby subdivide the metal oxide material into at least two regions, with one of the regions nearest the oxygen-sink material being relatively oxygen depleted relative to another of the regions.

Abstract: A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold.

Abstract: According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.

Abstract: In accordance with an embodiment of the present invention, a resistive switching device includes an opening disposed within a first dielectric layer, a conductive barrier layer disposed on sidewalls of the opening, a fill material including an inert material filling the opening. A solid electrolyte layer is disposed over the opening. The solid electrolyte contacts the fill material but not the conductive barrier layer. A top electrode is disposed over the solid electrolyte.

Abstract: Methods for adjusting and/or limiting the conductivity range of a nanotube fabric layer are disclosed. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via wet chemistry techniques. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via plasma treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via CVD treatment. In some aspects, the conductivity of a nanotube fabric layer is adjusted by functionalizing the nanotube elements within the fabric layer via an inert ion gas implant.

Abstract: Some embodiments include memory cells. A memory cell may contain a switching region and an ion source region between a pair of electrodes. The switching region may be configured to reversibly retain a conductive bridge, with the memory cell being in a low resistive state when the conductive bridge is retained within the switching region and being in a high resistive state when the conductive bridge is not within the switching region. The memory cell may contain an ordered framework extending across the switching region to orient the conductive bridge within the switching region, with the framework remaining within the switching region in both the high resistive and low resistive states of the memory cell.

Abstract: A memory device includes a first conductor, a diode, a memory element, and a second conductor arranged in series. The diode includes a first semiconductor layer over and in electrical communication with the first conductor. A patterned insulating layer has a sidewall over the first semiconductor layer. The diode includes an intermediate semiconductor layer on a first portion of the sidewall, and in contact with the first semiconductor layer. The intermediate semiconductor layer has a lower carrier concentration than the first semiconductor layer, and can include an intrinsic semiconductor. A second semiconductor layer on a second portion of the sidewall, and in contact with the intermediate semiconductor layer, has a higher carrier concentration than the intermediate semiconductor layer. A memory element is electrically coupled to the second semiconductor layer. The second conductor is electrically coupled to the memory element.

Abstract: A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel to a surface of the semiconductor substrate, and source and drain regions branched from the horizontal channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, processing the first semiconductor layer to locate the common source node corresponding to the source region, forming a gate in a space between the source region and the drain region, forming heating electrodes on the source region and the drain region, and forming resistance variable material layers on the exposed heating electrodes.

Abstract: Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.