Abstract: An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

Abstract: The present invention relates to a composition for forming a gate insulating layer of an organic thin film transistor comprising polyarylate, and an organic thin film transistor comprising a gate insulating layer, which is formed using the composition, in contact with an organic semiconductor channel.

Abstract: A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

Abstract: A liquid crystal display device includes a data line, a source electrode, a drain electrode, and a pixel electrode disposed on a lower substrate, an island-shaped semiconductor layer overlapping the source and drain electrodes, a gate insulating layer along an entire surface of the lower substrate including the semiconductor layer, a gate line and a gate electrode on the gate insulating layer, a passivation layer along an entire surface of the lower substrate including the gate line, an upper substrate facing the lower substrate, and a liquid crystal layer between the lower and upper substrates.

Abstract: A field-effect transistor is provided, which includes an organic thin film and which can realize a low threshold voltage while a stable, high field-effect mobility is ensured at the same time. In a field-effect transistor provided with a gate electrode, a source electrode, a drain electrode, a semiconductor film, a gate insulating film, and a substrate, the gate insulating film is formed from a plurality of insulating layers. Here, a first insulating layer in contact with the semiconductor film is formed from poly-p-xylylene formed into a film by a CVD method. A second insulating layer is formed from, for example, cyanoethylpullulan, and the dielectric constant is specified to be higher than that of the first insulating layer.

Abstract: An organic TFT device in which a plurality of organic TFTs can be formed in a narrow region and a manufacturing method therefor are proposed. The organic TFT device comprises a substrate, and a plurality of organic TFTs disposed in a transistor region on the substrate. The organic TFT device further comprises: a bank enclosing the transistor region and having a single opening; and a single organic semiconductor layer demarcated by the bank and forming a channel for the organic TFTs.

Abstract: Provided is a display device having an organic TFT. The display device includes the organic TFT on a substrate, a passivation layer covering the organic TFT, and a bank layer on the passivation layer. At this point, at least one of the passivation layer and the bank layer is formed of a material blocking light incident from a portion on the substrate to the organic TFT.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

Abstract: Provided are a composition for thermosetting organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for thermosetting organic polymeric gate insulating layer contains a thermosetting material in polyvinyl phenol as an organic polymeric gate insulating layer material, to improve a chemical resistance and an insulating property, and an organic thin film transistor includes a thermosetting organic polymeric gate insulating layer formed of the composition. The composition for thermosetting organic polymeric gate insulating layer endows an organic polymer with a thermosetting property, thereby being capable of improving the chemical resistance and the insulating property as well as of forming a layer having a device property improved.

Abstract: A semiconductor device includes a substrate, a gate electrode on the substrate and source and drain electrodes disposed at respective sides of the gate electrode. The device further includes a nano-line passing through the gate electrode and extending into the source and drain electrodes and having semiconductor characteristics. The nano-line may include a nano-wire and/or a nano-tube. A gate insulating layer may be interposed between the nano-line and the gate electrode. The source and drain electrodes may be disposed adjacent respective opposite sidewalls of the gate electrode, and the gate insulating layer may be further interposed between the source and drain electrodes and the gate electrode. Fabrication methods for such devices are also described.

Abstract: An electronic device is presented, such as a thin film transistor. The device comprises a patterned electrically-conductive layer associated with an active element of the electronic device. The electrically-conductive layer has a pattern defining an array of spaced-apart electrically conductive regions. This technique allows for increasing an electric current through the device.

Abstract: In an organic field effect transistor with an electrical conductor-insulator-semiconductor structure, the semiconductor layer is made of an organic compound, and the insulator layer is made of a polymer obtained through polymerization or copolymerization of 2-cyanoethyl acrylate and/or 2-cyanoethyl methacrylate.

Abstract: A low-cost and efficient process produces self-aligned vias in dielectric polymer films that provides electrical connection between a top conductor and a bottom conductor. The process is achieved by printing conductive posts on the first patterned conductive layer, followed by the deposition of an unpatterned layer dielectric, followed by the deposition of a second patterned conductive layer. The vias are formed during the flash annealing of the post after the dielectric is deposited, but before the second conductive layer is deposited. In this process, the post material is annealed with a flash of light, resulting in a release of energy which removes the dielectric on the top of the post.

Abstract: Disclosed are a composition including a silane-based organic/inorganic hybrid material having a multiple bond and one or more organic metal compounds and/or one or more organic polymers, an organic insulator including the composition, an organic thin film transistor (OTFT) including the organic insulator and an electronic device including the OTFT. The organic insulator including the composition for preparing an organic insulator has increased charge mobility and an increased on/off current ratio, thus exhibiting improved properties, and the organic thin film transistor manifests uniform properties due to the absence of hysteresis.

Abstract: An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

Abstract: The present invention relates to a Field-Effect Transistor (FET) and, more particularly, to a Dielectric-Modulated Field-Effect Transistor (DMFET) and a method of fabricating the same. A DMFET according to an embodiment of the present invention comprises a substrate in which a source and a drain are formed, wherein the source and the drain are spaced apart from each other, a gate formed on a region between the source and the drain, of the substrate, wherein at least part of the gate is spaced apart from the substrate, biomolecules formed below a region spaced apart from the substrate, of the gate, and a linker for combining the gate and the biomolecules.

Abstract: An organic thin film transistor array panel, for an embodiment, includes a plurality of pixel electrodes formed on a top layer to cover organic thin film transistors, with display areas defined by the areas of the pixel electrodes. Accordingly, the aperture ratio of the display device may be increased. A ratio of width to length (W/L) in a channel of an organic thin film transistor may be increased, and thereby on current (Ion) of the organic thin film transistor may be increased. The organic semiconductor may be prevented from overflowing while being formed in holes by an inkjet printing method such that deterioration of thin film transistor characteristics and pixel defects is prevented. The adhesive of the electrophoretic sheet is prevented from penetrating into the organic semiconductor when the electrophoretic display is formed by attaching the electrophoretic sheet to the organic thin film transistor array panel by a lamination method.

Abstract: A low channel length organic field-effect transistor can be produced in high volume and at low cost. The transistor structure includes successively deposited patterned layers of a first conductor layer acting as a source terminal, a first dielectric layer, a second conductor layer acting as a drain terminal, a semiconductor layer, a second dielectric layer, and a third conductor layer acting as the gate terminal. In this structure, the transistor is formed on the edge of the first dielectric between the first conductor layer and the second conductor layer. The second conductor layer is deposited on the raised surfaces formed by the dielectric such that conductive ink does not flow into the trough between the dielectric raised surfaces. This is accomplished by coating a flat or rotary print plate with the conductive ink, and applying the appropriate pressure to deposit the materials only on the raised surfaces of the dielectric. The second metal is automatically aligned to the layer beneath it.

Abstract: There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode on the insulating layer, a second electrode on the insulating layer at an interval with the first electrode, an organic semiconductor layer disposed in the interval between the first electrode and the second electrode and covering at least part of the first electrode and the second electrode, and a first resistance layer formed on the organic semiconductor layer and having an electrical resistance lower than that of the organic semiconductor layer. The first resistance layer is formed from conductive polymers.

Abstract: An ion gel including an ionic liquid and a block copolymer. The block copolymer includes at least three blocks, and the block copolymer forms a self-assembled ion gel in the ionic liquid. Also, thin film transistors including an ion gel insulator layer, capacitors including an ion gel insulator layer, integrated circuits including transistors including an ion gel insulator layer, and methods for forming each of these devices are described.

Abstract: A thin film transistor for an LCD device is disclosed, which comprises a gate electrode formed on a substrate; a gate insulation film formed of a high dielectric constant insulator having a bond structure of functional group, metal oxide, silicon and oxygen; and source and drain electrodes formed on the gate insulation film.

Abstract: Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

Abstract: A method for manufacturing an organic semiconductor device having a gate electrode, a source electrode, a drain electrode, an organic semiconductor layer, a gate insulation layer, and a substrate, including: forming, on the substrate, an underlayer that contains an organic polymer material having a liquid crystal core and is oriented in a specific direction, before forming the organic semiconductor layer; and forming the organic semiconductor layer so as to orient the organic semiconductor layer along the orientation of the underlayer, wherein: the gate insulation layer insulates the source electrode and the drain electrode from the gate electrode; and the substrate supports the gate electrode, the source electrode, the drain electrode, the organic semiconductor layer, and the gate insulation layer.

Abstract: In the method of fabricating a metal-insulator-metal (MIM) device, a first electrode of ?-Ta is provided. The Ta of the first electrode is oxidized to form a Ta2O5 layer on the first electrode. A second electrode of ?-Ta is provided on the Ta2O5 layer. Such a device exhibits strong data retention, along with resistance to performance degradation under high temperatures.

Abstract: An organic thin film transistor includes source and drain electrodes spaced apart from each other on a substrate, an organic semiconductor layer between the source and drain electrodes on the substrate, a gate insulating layer including an organic insulating material on the organic semiconductor layer, the gate insulating layer having a thickness of about 1,800 ? to about 2,500 ?, and a gate electrode on the gate insulating layer.

Abstract: A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer of metal oxide having a first heat of formation is formed on the first layer of dielectric material. A metal layer having a second heat of formation is formed on the metal oxide layer. The second heat of formation is greater than the first heat of formation. The metal oxide layer and the metal layer are annealed which causes the metal layer to reduce the metal oxide layer to metallic form, which then agglomerates to form metal islands. The metal layer becomes oxidized thereby embedding the metal islands within an oxide layer to form a nanocrystal layer. A control oxide is formed over the nanocrystal layer and a gate electrode is formed on the control oxide.

Abstract: Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent for dissolving the above components. The organic insulator of example embodiments may be provided in the form of a solid insulating film, which may increase charge mobility while decreasing the threshold voltage and operating voltage of OTFTs, and which also may generate relatively slight hysteresis.

Abstract: A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.

Abstract: An array substrate for a liquid crystal display device includes a data line formed on a substrate including a pixel region; a source electrode extending from the data line; a drain electrode separated from the source electrode; a pixel electrode contacting the drain electrode and formed of a transparent conductive material in the pixel region; an organic semiconductor layer on the source and drain electrodes; a first gate insulating layer of an organic insulating material on the organic semiconductor layer; a second gate insulting layer of an inorganic insulating material on entire surface of the substrate including the first gate insulating layer; a gate line formed on the second gate insulating layer and crossing the data line to define the pixel region; and a gate electrode on the second gate insulating layer extending from the gate line and corresponding to the organic semiconductor layer.

Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Abstract: Disclosed are a composition comprising an organic insulating polymer in which a photo-reactive functional group showing an increased crosslinking degree is introduced into a side-chain, an organic insulating film comprising the composition, an organic thin film transistor (OTFT) comprising the organic insulating film, an electronic device comprising the organic thin film transistor and methods of fabricating the organic insulating film, the organic thin film transistor and the electronic device. The OTFT comprising the organic insulating film of example embodiments may not show any hysteresis during the driving of the OTFT, and therefore, may exhibit a homogeneous property.

Abstract: Disclosed is an insulating organic polymer having side chains that enable the formation of a highly hydrophobic insulating layer with decreased surface energy. Decreased surface energy of an organic insulating layer formed using the insulating organic polymer may lead to an increase in the degree of alignment of a semiconductor material. Therefore, the insulating organic polymer may be used to fabricate an organic thin film transistor having improved characteristics, e.g., decreased threshold voltage and increased charge carrier mobility. Further disclosed are an organic insulating layer formed using the insulating polymer, an organic thin film transistor comprising the insulating layer and a method of fabricating the same, and an electronic device comprising the organic thin film transistor.

Abstract: A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength ?1 and a second photoactive region having a characteristic absorption wavelength ?2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that ?1 is at least about 10% different from ?2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.

Abstract: An apparatus comprising a substrate having a surface and a dielectric layer comprising a distribution of particles. The layer is located over the surface and has a dielectric constant of seven or more. Each particle has a particle core and a polymer shell that is chemically bonded thereto and located around the associated particle core. Each particle core includes a material having a dielectric constant of about fifteen or more. Aggregates of the particle cores having diameters of about 0.5 microns or more are substantially absent from the layer.

Abstract: An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

Abstract: The use of a poly(arylene ether) polymer as a passivation or gate dielectric layer in thin film transistors.

Abstract: A semiconductor component has at least one organic semiconductor layer. The component also includes at least one protective layer for at least partially covering the at least one organic semiconductor layer to protect against environmental influences. The at least one protective layer contains a proportion of an alkane with CnH2n+1 and n greater than or equal to 15 or consists entirely of an alkane of this type, or of a mixture of alkanes of this type. In one example, the protective layer is a paraffin wax. This creates a high resistance to moisture.

Abstract: Embodiments of the invention provide a semiconductor component and a method of manufacture thereof. A semiconductor component comprises: a gate electrode layer adjacent a substrate, and a gate dielectric layer adjacent the gate electrode layer. The gate dielectric layer comprises a monolayer of at least one compound, wherein the compound has an aromatic or a condensed aromatic molecular group. The molecular group is capable of ?-? interactions, which stabilize the monolayer. In an embodiment, the semiconductor component is an organic field effect transistor (OFET). In an embodiment of the invention, a method includes forming the monolayer using a liquid phase immersion process.

Abstract: A process for producing high performance organic thin film transistors in which the molecules in the organic thin film are highly ordered and oriented to maximize the mobility of current charge carriers. The uniform monolayer surface over various substrate materials so formed, result in a more reproducible and readily manufacturable process for higher performance organic field effect transistors that can be used to create large area circuits using a range of materials.

Abstract: A flat panel display device having a high capacitance and a high aperture ratio. A thin film transistor and a capacitor are formed on an insulating substrate. The thin film transistor includes a semiconductor layer, a gate electrode and source and drain electrodes. The capacitor has first and second capacitor electrodes and a dielectric layer. An insulating layer is formed over the transistor to insulate the gate electrode from the source and drain electrodes, and a portion of the insulating layer is formed as the dielectric layer between the first and second capacitor electrodes. A non-planar shape of the first capacitor electrode and a conforming shape of the dielectric layer and a second capacitor electrode increase a capacitance of the capacitor. The portion of the insulating layer serving as the capacitor dielectric is formed to be thinner than the portion of the insulating layer formed over the gate electrode.

Abstract: A method of fabricating a semiconductor device is provided. The method of fabricating the semiconductor device comprises a substrate. A polyacrylonitrile (PAN) powder is dissolved in a solvent and the solvent is heated to form a PAN solution. The PAN solution is cooled down and the PAN solution is then formed on the substrate. The PAN solution is allowed to stand and the solvent in the PAN solution is then removed to form a PAN dielectric layer on the substrate. A patterned conductive layer is formed on the PAN dielectric layer.

Abstract: A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about 5% of an NO gas to introduce nitrogen into the silicon oxide film so as to form a silicon oxynitride film, exposing the substrate to a nitrogen plasma atmosphere to further introduce nitrogen into the silicon oxynitride film in order to form a silicon oxynitride gate insulating film having a first peak concentration near the interface with the substrate and a second peak concentration near the surface thereof. Thereby, the concentration of nitrogen in the gate insulating film is increased without raising the concentration of nitrogen near the interface between the substrate and the gate insulating film to a higher level than required.

Abstract: A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.

Abstract: The invention makes it possible, for the first time, to produce, despite conventional p-type MOS technology, fast logical gates based on organic field effect transistors. This is primarily due to the early saturation effect of OFETs having very thin semi-conducting layers, and, furthermore, to the use of OFETs having specific properties as the organic logic components and to a novel layout of the circuit containing these logic components.

Abstract: The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.

Abstract: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

Abstract: A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.