Abstract: A method of manufacturing magnetic heads comprises the step of: fabricating a magnetic head substructure by forming a plurality of components of the magnetic heads on a single substrate, wherein a plurality of rows of pre-head portions that will be the respective magnetic heads later are aligned in the substructure; and fabricating the magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, a plurality of indicators are formed, each of the indicators serving as a reference for indicating the location of a region ABS in which the medium facing surfaces of the magnetic heads are to be formed.

Abstract: A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

Abstract: A method of manufacturing a spin valve film, produces a large read out signal. After a completion of a film making process for forming a previous film of two films to be formed successively, but before an initiation of a film making process for forming a succeeding film of the two films, a step of decreasing an anisotropic magnetic field of the spin valve film is introduced by interrupting a film making process. This step may be performed by keeping a substrate within a sputtering vacuum chamber. The interruption can be shortened by exposing the substrate to a plasma, transferring the substrate in a separate vacuum chamber is lower or whose H2O or O2 concentration is higher than that in the sputtering vacuum chamber, conducting a surface treatment with a gas containing H2O or O2, or flowing a process gas.

Abstract: This invention describes a manufacturable method, including a CMP liftoff process, for removing masking materials after ion milling for fabricating the write pole of a magnetic head. Significant parameters for the CMP assisted liftoff process include the thickness of the remaining mask materials after the write pole ion milling for effective CMP assisted liftoff, the thickness of the dielectric fill material deposited to protect the write pole during the CMP liftoff step, and the type of CMP slurry, polishing pad and the polishing conditions that are required to yield satisfactory results.

Abstract: A method for manufacturing sliders from a bar has: a radiating step which includes radiating an electromagnetic wave on at least a part of each space on a second surface of said bar, wherein said second surface is a back surface of a first surface of said bar, said first surface being formed into an air bearing surface of said slider, wherein said space is sandwiched between said elements, and wherein said electromagnetic wave is radiated such that an entire portion of said bar forms a curved shape such that said first surface forms a convex surface; a lapping step of lapping said first surface while pressing said bar against a lapping surface such that said first surface of each element forms a concave shape; and a dicing step of dicing said bar along said spaces to separate said bar into said sliders.

Abstract: A method for manufacturing a thin film magnetic head with a write element, the write element having a first yoke portion and a second yoke portion connected to each other by a back gap portion, a first pole portion and a second pole portion disposed in the medium-facing surface side of the first yoke portion and the second yoke portion respectively, a gap film disposed between the first pole portion and the second pole portion, and a coil surrounding in a spiral form the back gap portion, and the manufacturing method including the steps of forming the coil above the first yoke portion, forming a part which the first pole portion is composed of so that the part extends to cover the upper surface of the coil, forming the gap film on the first pole portion, forming the second yoke portion, which includes the second pole portion, above the gap film, and trimming the first pole portion so as to have a width fitting the second pole portion.

Abstract: A method to fabricate a tunneling magnetoresistive (TMR) read transducer is disclosed. An insulative layer is deposited on a wafer substrate, and a bottom lead is deposited over the insulative layer. A laminated TMR layer, having a plurality of laminates, is deposited over the bottom lead. A TMR sensor having a stripe height is defined in the TMR layer, and a parallel resistor and first and second shunt resistors are also defined in the TMR layer. A top lead is deposited over the TMR sensor. The parallel resistor is electrically connected to the bottom lead and to the top lead. The first shunt resistor is electrically connected to the bottom lead and the wafer substrate, and the second shunt resistor is electrically connected to the top lead and the wafer substrate.

Abstract: A method for fabricating a magnetic recording head writer. The writer includes a bottom magnetic pole and a write gap formed over the bottom pole and a coil trench formed in the bottom pole. A top magnetic pole is provided as two layers with the first layer including front and back tips with spaced apart walls positioned adjacent the trench bottom defining trench sides. A pole cover layer is included that is made up of a thin layer of insulating material deposited to cover sides and bottom of the coil trench. A bottom coil is formed on the pole cover layer in the bottom of the coil trench and coil insulation is provided between coil elements and adjacent trench walls and covemg the coil. A top coil with insulation is formed over the planarized bottom coil insulation and the top pole second layer is formed over the top coil.

Abstract: In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.

Abstract: A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.

Abstract: A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

Abstract: A method of fabricating a magnetic transducer is described which uses a trailing shield throat pad to set the trailing shield throat height. The trailing shield throat pad is used as a part of the structural form over which the material for the trailing shield is formed. The trailing shield throat pad is preferably made of a material which can selectively be removed from the gap layer with a selective etching process such as reactive-ion etching (RIE). The front edge of the trailing shield throat pad is used to define a peninsula on the trailing shield and thereby the throat of the trailing shield.

Abstract: A thin film magnetic head for perpendicular recording of a single-pole type has a flux enhanced part and a flux enhanced end arranged on a leading side of the main pole in parallel with the cross track direction. The side surface of the main pole intersecting the cross track direction is arranged on the track center side perpendicular to the track width. The field gradient of a perpendicular magnetic field on the trailing side of the main pole and near both ends of the track is made steep to realize a higher areal recording density. The head is fabricated by forming a first resist pattern on an inorganic insulating layer. A slope is formed on the inorganic insulating layer with the resist pattern as a mask. A second resist pattern is then formed on the inorganic insulating layer to form a magnetic layer on the inorganic insulating layer.

Abstract: A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of the spin valve sensor. The AP pinned layer structure has an antiparallel coupling layer (APC) which is located between first and second AP pinned layers (AP1) and (AP2). The invention employs a resetting process for setting of the magnetic moments of the AP pinned layers by applying a field at an acute angle to the head surface in a plane parallel to the major planes of the layers of the sensor. The resetting process sets a proper polarity of each AP pinned layer, which polarity conforms to processing circuitry employed with the spin valve sensor.

Abstract: A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.

Abstract: A method is provided for fabricating a head for perpendicular recording with self-aligning side shields. The voids where the side shields will be formed are milled into the layer of material for the pole tip to achieve self-alignment. A mask is patterned with openings defining initial shape of the pole piece tip nearest the air-bearing surface including the width and the point at which the pole tip widens out. A film of soft magnetic material to form the side shields is deposited over the wafer. A chemical-mechanical-polishing process is preferably used to remove the mask and the material deposited on it. A new mask is patterned over the predetermined area for the final shape of the pole tip and the side shields. The excess side shield material and pole tip material outside of the mask is then removed.

Abstract: A method for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.

Abstract: A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.

Abstract: The present invention provides a thin film magnetic head achieving improved recording performance by sharpening recording magnetic field gradient as much as possible. The thin film magnetic head has a return yoke layer disposed on a trailing side of a magnetic pole layer, and width W3 of an exposed surface of a lower TH specifying part in a TH specifying portion in the return yoke layer is equal to or larger than width W1 of an exposed surface of the magnetic pole layer (W3?W1), and is less than width W4 of an exposed surface of an upper TH specifying part (W3<W4). Since a part (magnetic flux) of a magnetic flux emitted from the exposed surface to the outside flows in the exposed surface while being spread a little in the width direction, spread of the magnetic flux is suppressed at the time of recording. Therefore, the recording magnetic field gradient near an air bearing surface is sharpened and recording performance is improved.

Abstract: A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.

Abstract: A spin valve sensor with an antiparallel coupled lead/sensor overlap region is provided comprising a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers. The ferromagnetic material of the bias layer in a track width region defined by a space between the first and second lead layers is converted to a nonmagnetic oxide layer allowing the free layer in the track width region to rotate in response to signal fields from a magnetic disk.

Abstract: The invention is directed to improvement of a write element of a thin film magnetic head. The first pole portion projects from a flat surface of a first yoke portion at a medium-facing surface side and having a reduced width at its upper end. The second pole portion faces the upper end of the first pole portion, having the same width as the upper end of the first pole portion, with the gap film interposed between the second pole portion and the upper end of the first pole portion. The first pole portion includes a magnetic film adjacent to the gap film, the magnetic film etched at both sides in width direction to have a narrowed portion having substantially the same width as the second pole portion, and a base portion connected to the narrowed portion, increasing in thickness toward the narrowed portion.

Abstract: A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.

Abstract: A method for fabricating a magnetic head, including depositing a plurality of sensor layers, including a pinned magnetic layer, a spacer layer, a free magnetic layer, a bias spacer layer, and a bias layer, and thereafter removing outer portions of the spacer layer, the free magnetic layer, the bias spacer layer, and the bias layer. Inner electrical lead portions are deposited upon outer portions of the pinned magnetic layer, and a bias pinning layer is then deposited upon both the bias layer and the inner electrical lead portions. Outer electrical lead portions are thereafter deposited in electrical connection with the inner electrical lead portions. An alternative embodiment includes removing portions of the pinned magnetic layer prior to the deposition of the inner electrical lead portions.

Abstract: A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer of the magnetoresistive element forms a prescribed angle of 45° relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Abstract: The effectiveness of an IrMn pinning layer in a CPP GMR device at high switching fields has been improved by replacing the conventional single layer seed by a layer of tantalum and either ruthenium or copper. The tantalum serves to cancel out the crystallographic influence of underlying layers while the ruthenium or copper provide a suitable base on which to grow the IrMn layer.

Abstract: A method for fabricating a magnetic head includes forming a first pole and a flux shaping layer in spaced relation to the first pole. A nonmagnetic layer is formed adjacent the flux shaping layer and positioned on an air bearing surface (ABS) side of the flux shaping layer. A tapered recess is created in the nonmagnetic layer, the taper of the recess increasing (i.e., becoming deeper) towards the flux forming layer. The recess is filled with a magnetic material. A probe layer is formed such that it is in electrical communication with the magnetic material filling the recess.

Abstract: The lower electrode is at least exposed at the surface of a substructure layer in a current-perpendicular-to-the-plane structure magnetoresistive element. A resist is formed to extend over the surface of the substructure layer. A patterning void is defined in the resist. The shape of the patterning void is designed to correspond to the contour of the magnetoresistive multilayered film. The magnetoresistive multilayered film is formed by deposition within the patterning void. This method enables avoidance of a dry etching process effected on the magnetoresistive multilayered film. Scrapings or waste of the magnetoresistive multilayered film are not generated at all. The side surfaces of the magnetoresistive multilayered film are completely prevented from attachment or adhesion of scrapings or waste. The side surfaces of the magnetoresistive multilayered film are kept stainless.

Abstract: An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabling a reduced shield-to-shield spacing.

Abstract: A magnetic head having a magnetic shield and/or pole layer that is fabricated as a plurality of laminated layers, in which each layer includes a sublayer thickness of Fe(N) and a sublayer thickness of NiFe(N), and where the relative thickness of these two sublayers is graduated. Particularly, the initially deposited laminations include sublayers of NiFe(N) having a thickness that is substantially greater than the thickness of the Fe(N) sublayers, whereas the finally deposited laminations include sublayers having an Fe(N) thickness that is substantially greater than the thickness of the NiFe(N) sublayers.

Abstract: A process for reducing fringe field effects of a main write pole by shielding it on all four sides, with the regular return pole also serving as the leading edge shield, is described. The main pole may also be tapered and the leading edge and side shields may be magnetically connected to each other.

Abstract: In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.

Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.

Abstract: A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and forming a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer. A cap layer is deposited over the thin AFM layer.

Abstract: A method of manufacturing a magneto-resistive device is provided for reducing a degradation in device characteristics due to annealing. The method includes the steps of depositing constituent layers, which make up a magneto-resistive layer on a base, patterning one or more layers of the constituent layers, forming an insulating layer in a region in which the one or more layers of the constituent layers have been removed by the patterning. For forming the insulating layer, the insulating layer is deposited while irradiating an ion beam of a gas mainly containing a rare gas toward the base after the step of patterning.

Abstract: A GMR sensor having improved longitudinal biasing is provided as is a method of forming it. The improved biasing is provided by longitudinal biasing structures in which a soft magnetic layer is interposed between a hard magnetic biasing layer and the lateral edge of the GMR sensor element. The soft magnetic layer eliminates the need for a seed layer directly between the hard magnetic layer and the GMR element and provides improved coupling to the free layer of the GMR element and a substantial reduction in random domain variations.

Abstract: A read head for a disk drive and a method of fabricating the read head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures to define the electrically active region of the sensor are described. The invention deposits the GMR and lead layers before milling away the unwanted material. A photoresist mask with a hole defining the active area of the sensor is preferably patterned over a layer of DLC that is formed into a mask. A selected portion of the exposed lead material is then removed using the DLC as a mask defining the active region of the sensor. A photoresist mask pad is patterned to define the full sensor width. The excess sensor and lead material exposed around the mask is milled away. The layers for the hardbias structure are deposited.

Abstract: The present invention relates to a thin-film read element for use in reading magnetic signals from a device. The read element includes a first thin-film read sensor and a second thin-film read sensor that are each configured to convert the magnetic signals of the device to electrical signals.

Abstract: A process for achieving tighter reader and writer track width control is disclosed. The write gap layer is used as the plating seed on which the upper pole is electro-formed. This allows the write gap layer to then be deposited through a precisely controllable process such as sputtering. Since less material needs to be removed during pole trimming, a thinner layer of photoresist may be used, resulting in improved dimensional control.

Abstract: A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in which a thinner tunnel barrier layer is disposed. The resistance of a magnetic tunnel junction memory element may be controlled by adjusting the surface area and/or thickness of the tunnel barrier layer without regard to the surface area of the ferromagnetic layers.

Abstract: The method for fabricating the magnetic head comprises the step of forming over a lower electrode a magnetoresistive effect film 16 with a polishing resistant film 20 formed over the upper surface, the step of forming a magnetic domain control film 24 over the entire surface of the lower electrode 12 including a region where the magnetoresistive effect film 16 has been formed, the step of selectively removing the magnetic domain control film 24 over the magnetoresistive effect film 16 by polishing with the polishing resistant film 20 as the stopper, the step of removing the polishing resistant film 20, and the step of forming an upper electrode 34 over the magnetoresistive effect film 16, from which the polishing resistant film 20 has been removed.

Abstract: A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (?S) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

Abstract: An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.

Abstract: In formation of an upper shield of a magnetic thin film head by electroplating, a current density of electroplating is regulated stepwise with time. Thus, in the upper shield formation, a film composition and magnetic characteristic with respect to the direction of film thickness can be controlled precisely, making it possible to provide a magnetic thin film head featuring significantly reduced noise-after-write and output fluctuation.

Abstract: As a protective film of an element and a slider in a magnetic head, a film is provided which is excellent in adhesiveness to a film forming surface and which shows sufficient corrosion-resistance property with a thinner thickness. To provided this film, according to the present invention, a DLC film as a protective film is formed onto an element portion end surface and a surface of a slider of a magnetic head core. A film deposition step is conducted plural times to obtain the DLC film with a predetermined thickness when the DLC film is formed using an electric discharge.

Abstract: A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.

Abstract: A method for reducing plated pole height loss in the formation of a write pole for a magnetic write head is disclosed. The method includes forming a conductive layer on a thin film substrate, forming a photoresist layer on the conductive layer and forming a trench in the photoresist layer. A thick seed layer is then placed on the trench and on the photoresist layer surface using a collimator. Moreover, the process includes plating while applying a voltage to the thin film substrate where the electrically isolated seed layer is removed and the trench is filled with plating material, removing the photoresist layer, and removing the exposed portions of the conductive layer on the thin film substrate.

Abstract: The method of manufacturing a thin-film magnetic head in accordance with the present invention comprises the steps of forming a first magnetic pole layer; removing both sides in a track width direction of the first magnetic pole layer so as to leave a predetermined residual area in the first magnetic pole layer; forming an insulating layer about the residual area of the first magnetic pole layer; forming a gap layer made of a nonmagnetic material; forming a second magnetic pole layer magnetically connected to the first magnetic pole; and patterning the second magnetic pole layer by etching while using a mask.

Abstract: The perpendicular magnetic head fabrication and testing method includes the additional fabrication of magnetic pole testing structures in the kerf area of the wafer substrate. Particularly, magnetic interconnect pieces are fabricated in the kerf area to magnetically connect an extending portion of the first magnetic pole with an extending portion of the second magnetic pole. As a result, when the perpendicular magnetic heads are fabricated at the wafer level, the first and second magnetic poles are interconnected through structures located in the kerf area. Thereafter, an ISAT magnetic pole test can be conducted by passing electrical current through the induction coil of the magnetic head, and magnetic flux will flow through the interconnected magnetic pole structure, thereby enabling the testing of the magnetic poles of the perpendicular magnetic head at the wafer level.

Abstract: A method of manufacturing a magnetic head is provided which can improve controlling a thickness of a gap layer. A coil base layer having at least a surface layer formed of one or two or more alloys selected from Au, Ru, and Rh is formed on a contact layer. Thereby, since a surface of the coil base layer is not oxidized due to air exposure, the contact layer is not oxidized. As such, the coil base layer protects the contact layer, so that it is not necessary to perform an etching process for removing an oxide layer, as in the related art. Therefore, it is possible to further improve controlling a thickness of a gap layer without cutting the gap layer by the etching process, as compared with the related art.