Ceramic Composition (e.g., Barium Titanate) Patents (Class 310/358)
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Patent number: 6747401Abstract: Augmenting surface electrodes for piezoelectric workpieces together with the method for fabrication are disclosed for improving fabrication and operation reliability of the workpieces. A piezoelectric workpiece used for energy conversion between electrical and mechanical forms in a piezoelectric system comprises a body, a number of function electrodes, and at least an augmenting surface electrode. The body of piezoelectricity is used for implementing the energy conversion. The function electrodes are each fixedly attached to the surface of the body, and are connected in the electric circuit for implementing the energy conversion. At least one of the function electrodes has a shape with a contour of at least one acute angle. At least an augmenting surface electrode has a substantially elongated shape fixedly attached to the surface of the body proximate to the acute angle.Type: GrantFiled: July 17, 2002Date of Patent: June 8, 2004Assignee: Advancewave Technology, Inc.Inventors: Yu-Hsiang Hsu, Wen-Hsin Hsiao, Wen-Jong Wu, Chih-Kung Lee
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Patent number: 6747529Abstract: A piezoelectric thin film resonator which comprises a first electrode, a second electrode, and a piezoelectric film which is interposed between the first electrode and the second electrode, and formed of an epitaxial ferroelectric thin film containing barium titanate, a spontaneous polarization of the epitaxial ferroelectric thin film being uniaxially orientated in a direction normal to a film surface.Type: GrantFiled: September 6, 2002Date of Patent: June 8, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Kazuhide Abe, Naoko Yanase, Takaaki Yasumoto, Ryoichi Ohara, Tatsuo Shimizu, Takashi Kawakubo
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Patent number: 6734606Abstract: A piezoelectric ceramic composition includes a bismuth layered compound containing Sr, Bi, Nb and a metal element other than Bi having a valence of 3. The bismuth layered compound satisfies the relational expressions: 0.275<a/c<0.5; 0.9≦b/c≦1; 0<x/c≦0.175; and 0.5<(a+3x/2)/c≦0.7, where a, b, c and x represent the molar fractions of Sr, Bi, Nb, and the metal element other than Bi having a valence of 3, respectively. Thus, a piezoelectric ceramic composition mainly containing a bismuth layered compound whose bismuth content is equal to or less than the stoichiometric value and not substantially containing lead and which can be advantageously used for piezoelectric ceramic elements exhibiting a Qmax-factor sufficient for practical use can be achieved.Type: GrantFiled: November 21, 2002Date of Patent: May 11, 2004Assignee: Murata Manufacturing Co., LtdInventors: Masahiko Kimura, Hirozumi Ogawa, Takuya Sawada, Akira Ando
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Patent number: 6731049Abstract: A piezoelectric element includes a ceramic substrate, a piezoelectric portion made of a piezoelectric ceramic composition containing a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary system solid solution composition having an average particle diameter of 1-10 &mgr;m with a maximum particle diameter being not more than 5 times as large as the average particle diameter including the chemical formula discussed below as a main component and the piezoelectric and the piezoelectric ceramic composition includes 0.05 to 10.0 mass % of NiO. An electrode is electrically connected to the piezoelectric portion, and the piezoelectric portion is solidly attached to the ceramic substrate directly or via the electrode. The piezoelectric ceramic composition is represented by the following general formula: Pbx(Mgy/3Nb2/3)aTibZrcO3, wherein 0.95≦x≦1.05; 0.8≦y≦1.0; a, b and c are decimals falling in a range surrounded by (a,b,c)=(0.550, 0.425, 0.025), (0.550, 0.325, 0.125), (0.375, 0.325, 0.300), (0.100, 0.Type: GrantFiled: February 7, 2002Date of Patent: May 4, 2004Assignee: NGK Insulators, Ltd.Inventors: Toshikatsu Kashiwaya, Mutsumi Kitagawa
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Patent number: 6707230Abstract: A closed loop motion control system employing at least one relaxor actuator which controls the position of a moving member having mass by controlling an electric field applied to the relaxor actuator. The actuator comprises a body of relaxor material dimensionally variable under the influence of the electric field applied in the form of a voltage to electrodes on at least two surfaces of the actuator. The voltage is applied in response to a feedback signal produced by at least one feedback sensor, which may be a displacement sensor or some other type of sensor. Thus, by constantly monitoring the displacement or other variable of the actuator device, the position of the moving member may be precisely controlled.Type: GrantFiled: May 29, 2002Date of Patent: March 16, 2004Assignee: University of North Carolina at CharlotteInventors: Stuart T. Smith, Shane C. Woody, Richard M. Seugling
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Patent number: 6707232Abstract: An ultrasonic motor has a vibrating body and a piezoelectric element disposed on the vibrating body for generating a vibration wave to vibrate the vibrating body. The vibration wave has a vibration node disposed on a diagonal line of the vibrating body. At least one protrusion is connected to the vibrating body for vibration therewith. The protrusion is disposed on the vibrating body at a position which does not correspond to the position of the vibration node. A moving body is disposed in contact with and driven by the protrusion during vibration thereof.Type: GrantFiled: January 30, 2001Date of Patent: March 16, 2004Assignee: Seiko Instruments Inc.Inventors: Akihiro Iino, Masao Kasuga, Makoto Suzuki, Tatsuru Sato, Satoshi Watanabe, Yoko Shinohara
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Patent number: 6703257Abstract: A process for providing an integrated piezoelectric/electrostrictive film type element with excellent durability, includes a substrate made of a ceramic material composed mainly of completely stabilized or partially stabilized zirconium oxide, and a piezoelectric/electrostrictive operating section integrated onto the ceramic substrate by a film-forming method, the piezoelectric/electrostrictive operating section comprising a lower electrode, a piezoelectric/electrostrictive layer of a lead element-containing composition, and an upper electrode, wherein a heterophase-occurence rate at a surface of the piezoelectric/electrostrictive layer is controlled to a range of 0.1 to 30%.Type: GrantFiled: September 6, 2002Date of Patent: March 9, 2004Assignee: NGK Insulators, Ltd.Inventors: Yukihisa Takeuchi, Tsutomu Nanataki, Koji Kimura, Masao Takahashi
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Patent number: 6703765Abstract: An electromechanical vice includes a support structure, a component moveable with respect to the support structure, and a piezoelectric device mechanically coupled to both the support structure and the component. The piezoelectric device includes a polycrystalline body and electrodes located on the body. The body has a composition with a stoichiometry described by [Pb(Mg1/3Nb2/3)O3](1−x) [PbTiO3]x. The value of x is in the range of about 0.31 to about 0.47.Type: GrantFiled: October 9, 2002Date of Patent: March 9, 2004Assignee: Lucent Technologies Inc.Inventors: Sang-Wook Cheong, Tae-Yeong Koo
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Patent number: 6700303Abstract: A piezoelectric element includes a plurality of piezoelectric layers composed of a piezoelectric material containing Sr, Bi, Ti, and O, at least three vibration electrodes opposing each other, each disposed among the piezoelectric layers, and an energy-confining region formed in a region in which the vibration electrodes overlap, the energy-confining region being parallel to the planes of the vibration electrodes and exciting an n-th order longitudinal thickness vibration. The maximum length L of a secant between two intersections on the periphery of the energy-confining region and the distance t between the topmost vibration electrode and the bottommost vibration electrode satisfy the relationship nL/t of less than 10. The piezoelectric element is thermally stable and has a narrow allowable error.Type: GrantFiled: December 18, 2002Date of Patent: March 2, 2004Assignee: Murata Manufacturing Co. LtdInventors: Akira Ando, Masahiko Kimura, Takuya Sawada
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Patent number: 6664715Abstract: This invention provides a piezoelectric actuator exhibiting a small change of displacement even when ranges of use conditions such as a temperature, an electric field and a compressive stress are broad, and a driving method of the piezoelectric actuator. In the piezoelectric actuator 1 using a piezoelectric body 11 undergoing displacement upon application of a voltage, a crystalline structure of the piezoelectric body 11 substantially exists on a tetragonal system side outside of a morphotropic phase boundary (MPB) between the tetragonal system and a rhombohedral system under conditions of the lowest temperature, the lowest electric field and the maximum compressive stress that are used.Type: GrantFiled: June 11, 2002Date of Patent: December 16, 2003Assignee: Denso CorporationInventors: Takashi Yamamoto, Youta Iwamoto
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Publication number: 20030227234Abstract: A piezoelectric/electrostrictive device 100 includes a pair of mutually confronting thin plate portions 12a and 12b, a fixing portion 14 for supporting the pair of thin plate portions 12a and 12b, movable portions 20a and 20b being provided at tip end portions of the pair of thin plate portions 12a and 12b and having mutually confronting end surfaces 34a and 34b, and piezoelectric/electrostrictive elements 18a and 18b being disposed on respective thin plate portions 12a and 12b, wherein at least both side surfaces of thin plate portions 12a and 12b and piezoelectric/electrostrictive elements 18a and 18b are covered with coating films 101 made of a material with a low thermal expansion coefficient. The piezoelectric/electrostrictive device is excellent in temperature characteristic and ensures displacement following an applied electric field irrespective of change in temperature of environment of use or an element itself, or even upon use at high temperatures.Type: ApplicationFiled: May 30, 2003Publication date: December 11, 2003Applicant: NGK Insulators, Ltd.Inventors: Masahiko Namerikawa, Kazuyoshi Shibata
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Patent number: 6639340Abstract: Provided is a method for manufacturing a piezoelectric element that has excellent piezoelectric characteristics and can be made into a thicker film. A piezoelectric thin film is crystallized by a process in which piezoelectric precursor films 4021 through 4025 containing the metal elements of a piezoelectric ceramic are coated with a material, dried, pyrolyzed, and then heat-treated under prescribed conditions in a diffusion furnace. With this method, a piezoelectric thin film can be made into a thicker film without initiating cracking.Type: GrantFiled: April 13, 2000Date of Patent: October 28, 2003Assignee: Seik Epson CorporationInventors: Hong Qiu, Koji Sumi, Souichi Moriya, Masato Shimada, Tsutomu Nishiwaki
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Patent number: 6635818Abstract: There is provided a wireless-type power supply method that is applied to the case where an object to which energy is to be transmitted is relatively small, such as a micromachine, and that allows high-voltage electrical energy to be transmitted without using a wire. In this method, the optical energy from an light source is converted into high-voltage electrical energy by means of an energy transducer formed of either a piezoelectric element or a photovoltaic element on the above-described object, and the high-voltage electrical energy is supplied to an actuator, whereby the construction of the receiving side of the energy transmission is simplified.Type: GrantFiled: August 24, 2001Date of Patent: October 21, 2003Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Masaaki Ichiki, Koichi Ozaki, Yasushi Morikawa, Makoto Tanaka
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Publication number: 20030173871Abstract: To provide a piezoelectric thin film having an improved and stable characteristic by controlling stress applied during forming a piezoelectric thin film and providing the piezoelectric thin film having a perovskite structure. A thin film piezoelectric element in which a lower electrode is formed on a substrate, a piezoelectric thin film containing lead is formed on the lower electrode, and an upper electrode is further placed on the piezoelectric thin film, characterized in that the piezoelectric thin film is a dielectric with the perovskite structure having lead, zirconium, and titanium as the main ingredients, and is in a composition region in which, in the composition of the whole piezoelectric thin film, the Zr/(Zr+Ti) ratio is not less than 0.53, and has a crystal structure of the tetragonal system in which an axis c is longer than an axis a.Type: ApplicationFiled: April 18, 2003Publication date: September 18, 2003Inventors: Isaku Kanno, Shintarou Hara, Takanori Nakano
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Patent number: 6619788Abstract: An accepter-doped “hard” PZT is used in a piezoelectric print head instead of the conventional “soft” donor-doped material. The print head preferably is of a chevron side-shooter configuration and is advantageous for high-definition grey-scale printing.Type: GrantFiled: July 16, 2001Date of Patent: September 16, 2003Assignee: Xaar Technology LimitedInventor: Angus Condie
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Patent number: 6620287Abstract: A method of manufacturing a fiber assembly, the method comprising: (a) providing a plurality of layers, each layer comprising sintered fibers of piezoelectric material aligned substantially parallel; (b) laminating the plurality of layers; and (c) applying a matrix material to the laminated layers to affix the layers and form a fiber assembly.Type: GrantFiled: April 12, 2001Date of Patent: September 16, 2003Inventor: Richard B. Cass
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Publication number: 20030164657Abstract: A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed.Type: ApplicationFiled: October 2, 2001Publication date: September 4, 2003Inventors: Kenji Inoue, Katsuo Sato, Hiroki Morikoshi, Katsumi Kawasaki, Jun Sato
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Publication number: 20030151331Abstract: A piezoelectric material includes a polycrystalline piezoelectric compound having a component composition defined as Sr2-xCaxNaNb5O15, where x=0.05 to 0.35, and at least one rare earth oxide compound selected from the group consisting of Y2O3, La2O3, Dy2O3, Nd2O3, Yb2O3, Sm2O3, Er2O3, Gd2O3 and Pr6O11 to be added to the piezoelectric compound by 0.5 to 3.0 wt %. Moreover, a method of manufacturing the piezoelectric material includes blending ceramic materials, synthesizing, milling, pressing and sintering processes. In the synthesizing process, calcining is conducted at a temperature in a range from 1,050° C. to 1,150° C. for 2 to 12 hours in the atmosphere. And the sintering process includes first firing at temperature in a range from 1,180° C. to 1,270° C. for 4 to 8 hours in the atmosphere, and second firing at a temperature in a range from 1,370° C. to 1,400° C. for 10 to 75 hours in the atmosphere.Type: ApplicationFiled: June 19, 2002Publication date: August 14, 2003Applicant: NISSAN MOTOR CO., LTD.Inventors: Yoshio Akimune, Fumio Munakata, Mikiya Shinohara
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Patent number: 6597084Abstract: Piezoelectric transformers have a number of favorable characteristics over traditional electromagnetic tranformers. However, the construction of piezoelectric transformers tends to be complicated, which may result in increasing manufacturing cost. Furthermore, such complex constructions may raise difficulties in the miniaturization of such devices. A ring-shaped piezoelectric transformer is developed in this invention for low voltage applications. One surface of the transformer is covered by two disc or ring-shaped electrodes separated by a ring-shaped separating segment, and the regions covered by the disc or ring-shaped electrodes served as the input and output parts of the transformer. This transformer may be fabricated relatively easily due to its simple structure. Furthermore, its size and thickness may be reduced relatively easily without increasing the difficulty of the fabricating process. The transformer may be used separately or in parallel.Type: GrantFiled: January 5, 2001Date of Patent: July 22, 2003Assignee: The Hong Kong Polytechnic UniversityInventors: Jin-Hua Hu, Hing-Leung Li, Helan Lai-Wah Chan, Chung-Loong Choy
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Patent number: 6594875Abstract: A method for forming a piezoelectric/electrostrictive actuator in which a piezoelectric/electrostrictive file is formed on a vibrating plate or lower electrode by applying a layer of a ceramic paste theron and baking the paste layer at a low temperature in a range below 300° C. to form the film to its final thickness all in one step.Type: GrantFiled: February 5, 2001Date of Patent: July 22, 2003Assignee: Samsung Electro-Mechanics Co.Inventors: Kwang Kyun Chang, Sang Kyeong Yun, Dong-Hoon Kim
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Patent number: 6590316Abstract: The present invention provides a piezoelectric vibrator, in which there is no significant change in the characteristics even when depole occurs due to heat shock and the like. The piezoelectric vibrator includes a first piezoelectric substrate having split electrodes formed on one main surface thereof and a second piezoelectric substrate having a common electrode formed on one main surface thereof. The remaining main surfaces of both piezoelectric substrates are bonded to each other via an intermediate electrode. The material of the first piezoelectric substrate differs from the material of the second piezoelectric substrate. As a result, the difference (longitudinal DF) between a resonant frequency and an anti-resonant frequency in a longitudinal vibration of the piezoelectric vibrator substantially coincides with the difference (transverse DF) between a resonant frequency and an anti-resonant frequency in a transverse vibration thereof.Type: GrantFiled: December 26, 2001Date of Patent: July 8, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Masato Koike, Katsumi Fujimoto, Nobuyuki Ishitoko
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Publication number: 20030117043Abstract: A piezoelectric ceramic composition includes a bismuth layered compound containing Sr, Bi, Nb and a metal element other than Bi having a valence of 3. The bismuth layered compound satisfies the relational expressions: 0.275<a/c<0.5; 0.9≦b/c≦1; 0<x/c≦0.175; and 0.5<(a+3x/2)/c≦0.7, where a, b, c and x represent the molar fractions of Sr, Bi, Nb, and the metal element other than Bi having a valence of 3, respectively. Thus, a piezoelectric ceramic composition mainly containing a bismuth layered compound whose bismuth content is equal to or less than the stoichiometric value and not substantially containing lead and which can be advantageously used for piezoelectric ceramic elements exhibiting a Qmax-factor sufficient for practical use can be achieved.Type: ApplicationFiled: November 21, 2002Publication date: June 26, 2003Inventors: Masahiko Kimura, Hirozumi Ogawa, Takuya Sawada, Akira Ando
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Patent number: 6583688Abstract: The invention describes a tunable filter arrangement with a plurality of resonators which are coupled to one another and of which there is at least one which comprises a piezoelectric component made of a ferroelectric material and to which a DC voltage source is connected. The application of a DC voltage to the resonator renders it possible to change its electrical properties and thus the overall filter characteristic. Furthermore, a transmitter, a receiver device, and a mobile telephone device with such a filter arrangement are disclosed, aswell as a tunable bulk acoustic wave resonator.Type: GrantFiled: April 5, 2001Date of Patent: June 24, 2003Assignee: Koninklijke Philips Electronics N.V.Inventors: Mareike Katharine Klee, Robert Frederick Milsom, Hans Peter Löbl, Rainer Kiewitt, Uwe Mackens, Martinus Hermanus Wilhemus Maria Van Delden, Wilhelm Georg Hermann, Olaf Wunnicke
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Patent number: 6566265Abstract: A method of working a piezoelectric substance, which comprises the steps of, forming, on one surface of a piezoelectric block, an etching mask having an aperture which defines a boundary region between a first piezoelectric segment to be removed, and a second piezoelectric segment to be left remained, forming, on the opposite surface of the piezoelectric block, a sacrificial layer which corresponds to the first piezoelectric segment to be removed and the boundary region, etching the piezoelectric block in the boundary region to reach the sacrificial layer, and eliminating the sacrificial layer to remove the first piezoelectric segment.Type: GrantFiled: May 17, 2001Date of Patent: May 20, 2003Assignee: Olympus Optical Co., Ltd.Inventors: Masayoshi Esashi, Takashi Abe, Katsuhiro Wakabayashi
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Publication number: 20030085636Abstract: A piezoelectric element includes a plurality of piezoelectric layers composed of a piezoelectric material containing Sr, Bi, Ti, and O, at least three vibration electrodes opposing each other, each disposed among the piezoelectric layers, and an energy-confining region formed in a region in which the vibration electrodes overlap, the energy-confining region being parallel to the planes of the vibration electrodes and exciting an n-th order longitudinal thickness vibration. The maximum length L of a secant between two intersections on the periphery of the energy-confining region and the distance t between the topmost vibration electrode and the bottommost vibration electrode satisfy the relationship nL/t of less than 10. The piezoelectric element is thermally stable and has a narrow allowable error.Type: ApplicationFiled: December 18, 2002Publication date: May 8, 2003Applicant: Murata Manufacturing Co., Ltd.Inventors: Akira Ando, Masahiko Kimura, Takuya Sawada
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Patent number: 6552474Abstract: A ceramic diaphragm structure includes a ceramic substrate having at least one window portion, and a thin ceramic diaphragm plate laminated so as to cover the window portion, wherein the ceramic diaphragm structure is unitarily formed so that the thin ceramic diaphragm portion is protruded in the direction opposite to the window portion, and a ceramic connecting layer connects the thin ceramic diaphragm plate to the ceramic substrate. The ceramic diaphragm structure has a high resonance frequency, an enhanced strength, an excellent quality and a high reliability.Type: GrantFiled: October 2, 2001Date of Patent: April 22, 2003Assignee: NGK Insulators, Ltd.Inventors: Yukihisa Takeuchi, Tsutomu Nanataki, Katsuyuki Takeuchi
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Patent number: 6548941Abstract: A piezoelectric element includes a plurality of piezoelectric layers which contain a bismuth layer compound as the main component of the piezoelectric ceramic composition. The piezoelectric layers are provided with electrodes containing Pd as a main component so that the piezoelectric layers vibrate. At least one of the electrodes and the piezoelectric ceramic composition contains Ag.Type: GrantFiled: July 3, 2002Date of Patent: April 15, 2003Assignee: Murata Manufacturing Co. LTDInventors: Takuya Sawada, Masahiko Kimura, Akira Ando
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Publication number: 20030067251Abstract: A piezoelectric element comprising: a ceramic substrate, a piezoelectric portion made of a piezoelectric ceramic composition containing a PbMg1/3Nb2/3O—PbZrO3—PbTiO3 ternary system solid solution composition having an average particle diameter of 1-10 &mgr;m with a maximum particle diameter being 5 times as large as the average particle diameter or less and being represented by the following general formula (1) as a main component and 0.05 to 10.0 mass % of NiO, and an electrode. The electrode is electrically connected to the piezoelectric portion, and the piezoelectric portion is solidly attached to the ceramic substrate directly or via the electrode.Type: ApplicationFiled: February 7, 2002Publication date: April 10, 2003Applicant: NGK Insulators, Ltd.Inventors: Toshikatsu Kashiwaya, Mutsumi Kitagawa
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Patent number: 6543107Abstract: A method for producing the piezoelectric thin film is based on a sol-gel process and comprises the steps of: coating a substrate with a sol composition comprising a sol, of a metal component for constituting a piezoelectric film, and a polymer compound and then drying the coating to form a film; pre-sintering the film to form a porous thin film of gel comprising an amorphous metal oxide; pre-annealing the porous thin film of gel to convert the film to a film of a crystalline metal oxide; repeating the steps at least once to form laminated films of a crystalline metal oxide; and annealing the films thus prepared to grow crystal grains of perovskite type in the film into a larger size.Type: GrantFiled: February 28, 1997Date of Patent: April 8, 2003Assignee: Seiko Epson CorporationInventors: Satoru Miyashita, Masakazu Shinozuka, Tetsushi Takahashi
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Patent number: 6545387Abstract: A surface acoustic wave (SAW) filter comprising as a substrate a piezoelectric single crystal having the composition of formula (I) with high dielectric and piezoelectric constants, low temperature coefficient and good electromechanical properties has a high piezoelectric constant, a low insertion loss, and a broad bandwidth in a high frequency region, and therefore can be useful for preparing a SAW filter for high frequency telecommunication systems: x(A)y(B)z(C)—p(P)n(N) (I) wherein, (A) is Pb(Mg1/3Nb2/3)O3 or Pb(Zn1/3Nb2/3)O3, (B) is PbTiO3, (C) is LiTaO3, (P) is a metal selected from Pt, Au, Ag, Pd and Rh, (N) is an oxide of a metal selected from Ni, Co, Fe, Sr, Sc, Ru, Cu and Cd, x is a number of 0.65 to 0.98, y is a number of 0.01 to 0.34, z is a number of 0.01 to 0.1, and p and n are each independently a number of 0.01 to 5.Type: GrantFiled: March 30, 2001Date of Patent: April 8, 2003Assignee: Ibule Photonics Co., Ltd.Inventors: Sang-Goo Lee, Jin-Yong Kim, Hyeong-Joon Kim
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Publication number: 20030062807Abstract: A ceramic device has an actuator element which includes a shape-retaining layer, an upper electrode formed on an upper portion of the shape-retaining layer, and a lower electrode formed on a lower portion of the shape-retaining layer; a vibrating section of ceramics which supports the actuator element; and a fixed section of ceramics which vibratingly supports the vibrating section. An electrode material of the lower electrode contacting the vibrating section contains an additive in an amount of 0.01% by weight to 20% by weight. The electrode material contains platinum as a major component, for example. The additive such as zirconium oxide, cerium oxide, or titanium oxide is preferably used.Type: ApplicationFiled: August 29, 2002Publication date: April 3, 2003Applicant: NGK Insulators, Ltd.Inventors: Yukihisa Takeuchi, Tsutomu Nanataki, Koji Kimura, Masao Takahashi
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Patent number: 6539802Abstract: The invention provides an angular velocity sensor capable of obtaining vibration which is close to a linear-operation for a large amplitude input, and a high sensitivity at the same time. The sensor comprises a vibrator, which is made of a piezoelectric element having a perovskite crystal structure expressed as ABO3, and 0.1-1.0 wt. % of MnO2 is added to this piezoelectric element.Type: GrantFiled: December 21, 2000Date of Patent: April 1, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Jiro Terada, Masami Tamura
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Publication number: 20030058065Abstract: A piezoelectric thin film resonator which comprises a first electrode, a second electrode, and a piezoelectric film which is interposed between the first electrode and the second electrode, and formed of an epitaxial ferroelectric thin film containing barium titanate, a spontaneous polarization of the epitaxial ferroelectric thin film being uniaxially orientated in a direction normal to a film surface.Type: ApplicationFiled: September 6, 2002Publication date: March 27, 2003Inventors: Kazuhide Abe, Naoko Yanase, Takaaki Yasumoto, Ryoichi Ohara, Tatsuo Shimizu, Takashi Kawakubo
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Patent number: 6534902Abstract: A piezoelectric device having an electromechanical coefficient, which can be applied to practical uses, is obtained by an energy-trapping effect using a piezoelectric ceramic having a layered perovskite structure provided with high-temperature resistance and little high-frequency loss. The piezoelectric device has a substrate formed of a piezoelectric ceramic having a layered perovskite structure. The c-axis in the substrate is preferentially oriented in the width direction thereof, and the substrate is polarized in the longitudinal direction. Two electrodes are formed on both main surfaces of the substrate so as to oppose each other in the vicinity of the central part thereof. As a material used for the substrate, a piezoelectric ceramic composition primarily composed of a ceramic composition represented by the general formula CaBi4Ti4O15 is preferably used.Type: GrantFiled: March 1, 2002Date of Patent: March 18, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Masahiko Kimura, Akira Ando, Takuya Sawada, Hirozumi Ogawa
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Publication number: 20030048046Abstract: A piezoelectric/electrostrictive film device comprises a piezoelectric/electrostrictive layer and at least a pair of electrodes formed on the piezoelectric/electrostrictive layer, wherein a perovskite piezoelectric/electrostrictive material of the piezoelectric/electrostrictive layer contains Pb, and wherein the perovskite piezoelectric/electrostrictive material contains MnO2 in an amount of 0.1 to 0.5% by weight. Specifically, the perovskite piezoelectric/electrostrictive material contains Pb(Mg⅓Nb⅔)O3-PbZrO3-PbTiO3 in which a part of Pb is substituted with Sr.Type: ApplicationFiled: September 11, 2002Publication date: March 13, 2003Applicant: NGK InsulatorsInventors: Hirofumi Yamaguchi, Toshikatsu Kashiwaya, Kazuhiro Yamamoto, Masao Takahashi
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Patent number: 6525447Abstract: A method for manufacturing a langasite single crystal substrate comprises the steps of polishing at least one of the main surfaces of a raw material substrate; and wet-etching said polished main surface of the substrate with a solution including H3PO4, HNO3 and CH3COOH.Type: GrantFiled: January 11, 2001Date of Patent: February 25, 2003Assignee: Murata Manufacturing Co., Ltd.Inventors: Makoto Kumatoriya, Jun Nakanishi, Masashi Omura
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Patent number: 6518690Abstract: An integrated piezoelectric/electrostrictive film type element with excellent durability, includes a substrate made of a ceramic material composed mainly of completely stabilized or partially stabilized zirconium oxide, and a piezoelectric/electrostrictive operating section integrated onto the ceramic substrate by a film-forming method, the piezoelectric/electrostrictive operating section comprising a lower electrode, a piezoelectric/electrostrictive layer of a lead element-containing composition, and an upper electrode, wherein a heterophase-occurence rate at a surface of the piezoelectric/electrostrictive layer is controlled to a range of 0.1 to 30%.Type: GrantFiled: April 18, 2001Date of Patent: February 11, 2003Assignee: NGK Insulators, Ltd.Inventors: Yukihisa Takeuchi, Tsutomu Nanataki, Koji Kimura, Masao Takahashi
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Publication number: 20030001460Abstract: In a piezoelectric ceramic containing a bismuth layer compound containing Ca, Bi, Ti, and O, as a main component, the molar ratio of Ca to Bi to Ti in the bismuth layer compound, which is the main component, is represented by a:b:c and formulas 0.15≦a/c<0.25 and 3.5≦(2a+3b)/c≦3.88 are satisfied.Type: ApplicationFiled: May 22, 2002Publication date: January 2, 2003Inventors: Hirozumi Ogawa, Masahiko Kimura, Akira Ando
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Patent number: 6495945Abstract: A ceramic substrate 1 comprises a thin diaphragm portion 3 and a thick portion 2. A lower electrode 4 is formed on the ceramic substrate and is spaced apart from an auxiliary electrode 8, also formed on the ceramic substrate. A bonding layer 7C comprises an insulator and is formed on the ceramic substrate between the lower and auxiliary electrodes. A piezoelectric/electrostrictive layer 5 is formed on at least a portion of each of the lower electrode, the auxiliary electrode and the bonding layer. An upper electrode 6 extends over the piezoelectric/electrostrictive layer and contacts the auxiliary electrode. A bonded portion exists wherein the bonding layer serves to completely bond together the substrate and the piezoelectric/electrostrictive film layer.Type: GrantFiled: September 6, 2001Date of Patent: December 17, 2002Assignee: NGK Insulators, Ltd.Inventors: Hirofumi Yamaguchi, Nobuo Takahashi
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Patent number: 6495947Abstract: A piezoelectric ceramic composition in which the mechanical quality factor Qm and the electromechanical coupling factor Kp are superior, and a high power output piezoelectric transformer made of it are disclosed. The piezoelectric ceramic composition according to the present invention is composed of Pb1−aSra [(Ni1/2W1/2)b(Mn1/3Nb2/3)c(Zr1−xTix)1−b−c]O3+kPbO, where a is 0-0.06 mol %, b is 0.01−0.05 mol %, c is 0.01-0.09 mol %, x is 0.47-0.53 mol %, and k is 0.1-0.7 wt %. The piezoelectric transformer according to the present invention includes: a piezoelectric block composed of the same composition; a first electrode consists of an inner electrode and an outer electrode, the inner electrode being formed at a center of a top of the piezoelectric block, and the outer electrode being formed around the inner electrode by being separated by an isolating region; a second electrode is formed on the bottom of the piezoelectric block.Type: GrantFiled: December 5, 2000Date of Patent: December 17, 2002Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Sun Kim, Choong Sik Yoo, Joo Hyun Yoo, Yong Woo Lee
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Patent number: 6492763Abstract: A piezoelectric ceramic composition in which the dielectric constant, the mechanical quality factor Qm and the electromechanical coupling factor Kp are superior, and a high power output piezoelectric transformer made of it are disclosed. The piezoelectric ceramic composition according to the present invention is composed of Pb[(Sb1/2Nb1/2)x(Zr0.495Ti0.505)1−x]O3+yPbO+zMnO, where x is 0.01-0.05 mol %, y is 0.03-0.6 wt %, and z is 0.7 wt % or less. The piezoelectric transformer according to the present invention includes: a piezoelectric block composed of the same composition; a first electrode consists of an inner electrode and an outer electrode, the inner electrode being formed at the center of the top of the piezoelectric block, and the outer electrode being formed around the inner electrode by being separated by an isolating region; and a second electrode is formed on the bottom of the piezoelectric block.Type: GrantFiled: December 5, 2000Date of Patent: December 10, 2002Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Sun Kim, Choong Sik Yoo, Joo Hyun Yoo, Yong Woo Lee
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Patent number: 6479923Abstract: A piezoelectric ceramic comprising lead titanate as a primary component, wherein the primary component contains a titanium oxide crystalline phase. Methods for producing the ceramic, and piezoelectric oscillators making use of the ceramic are also disclosed.Type: GrantFiled: May 27, 1999Date of Patent: November 12, 2002Assignee: Murata Manufacturing Co., Ltd.Inventors: Akihito Okuda, Akinobu Takamura, Masataka Kida, Yoshiaki Kohno
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Patent number: 6476541Abstract: An ultrasonic probe optically coupled to an electronic console comprises a multiplicity of transducer elements. Each transducer element is capable of transmitting and detecting ultrasound waves. Each transducer element constitutes a piezocomposite structure comprising mutually parallel rods of two types embedded in a passive polymer matrix: piezoelectric rods and micro-cavity laser rods. The piezoelectric rods are optically activated to generate an acoustic compression wave transmitted from the front face of the piezocomposite structure. The micro-cavity lasers produce a frequency-modulated optical signal having a frequency shift which is a function of a strain produced in the lasing medium by a returning acoustic wave impinging on the piezocomposite structure.Type: GrantFiled: February 23, 2001Date of Patent: November 5, 2002Assignee: General Electric CompanyInventors: Lowell Scott Smith, Anil Raj Duggal
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Patent number: 6476542Abstract: The present invention provides at least two input driving sections for a piezoelectric transformer. The two input driving sections are configured in a stacked configuration, with either one section on top of the other or the sections interlaced. Each input driving section includes a pair of electrodes. All of the electrodes preferably have a distinct electrode shape. The two input driving sections provide for the application of phase-modulated input signals to control the gain or amplitude of the transformer output.Type: GrantFiled: December 20, 2000Date of Patent: November 5, 2002Assignee: CTS CorporationInventor: James R. Phillips
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Patent number: 6467140Abstract: Transducer elements having a 2—2 or 1-3 composite structure and driven in a k31 transverse mode for small-feature size transducer arrays, which provide improved electrical impedance matching to an ultrasonic imaging system and improved acoustic matching to the human body. The transducer element includes a plurality of thin piezoceramic wafers which are electroded on opposing major surfaces. The spaced wafers are separated by a passive polymer layer in a composite structure. Methods of producing the transducer elements are also described.Type: GrantFiled: January 5, 2001Date of Patent: October 22, 2002Assignee: Koninklijke Philips Electronics N.V.Inventor: Turukevere R. Gururaja
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Publication number: 20020149299Abstract: A piezoelectric ceramic composition in which the mechanical quality factor Qm and the electromechanical coupling factor Kp are superior, and a high power output piezoelectric transformer made of it are disclosed.Type: ApplicationFiled: March 26, 2002Publication date: October 17, 2002Applicant: Samsung Electro-Mechanics Co., LtdInventors: Jong Sun Kim, Choong Sik Yoo, Joo Hyun Yoo, Yong Woo Lee
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Patent number: 6455986Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14 wherein A is strontium, B is niobium, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.Type: GrantFiled: May 3, 2001Date of Patent: September 24, 2002Assignee: Crystal Photonics, IncorporatedInventors: Bruce H. T. Chai, Mitch M. C. Chou, Haihong Qiu, Shen Jen
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Patent number: 6452310Abstract: A thin film resonator and method includes a first electrode (110) and a second electrode (112) substantially parallel to the first electrode (110). An intermediate layer (120) is disposed between and coupled to the first and second electrode (110, 112). The intermediate layer (120) includes a first piezoelectric layer (122), a second piezoelectric layer (124), and a spacer layer (130) disposed between the first and second piezoelectric layers (122, 124). The spacer layer (130) has an acoustic impedance substantially the same as the first and second piezoelectric layers (122, 124) and is formed of a disparate material.Type: GrantFiled: January 18, 2000Date of Patent: September 17, 2002Assignee: Texas Instruments IncorporatedInventor: Carl M. Panasik
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Patent number: 6452306Abstract: A compact and wide band surface acoustic wave device for intermediate-frequency is disclosed. A piezoelectric substrate for use in a surface acoustic wave device having high electromechanical coupling factor and low SAW velocity is also disclosed. The surface acoustic wave device is constituted of a piezoelectric substrate 1 and inter-digital electrodes 2, 2 formed on the piezoelectric substrate 1. The piezoelectric substrate 1 has a crystal structure of Ca3Ga2Ge4O14 and is represented by the chemical formula, Sr3NbGa3Si2O14.Type: GrantFiled: September 14, 2001Date of Patent: September 17, 2002Assignee: TDK CorporationInventors: Kenji Inoue, Katsuo Sato, Hiroki Morikoshi, Katsumi Kawasaki
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Publication number: 20020125796Abstract: A piezoelectric device having an electromechanical coefficient, which can be applied to practical uses, is obtained by an energy-trapping effect using a piezoelectric ceramic having a layered perovskite structure provided with high-temperature resistance and little high-frequency loss. The piezoelectric device has a substrate formed of a piezoelectric ceramic having a layered perovskite structure. The c-axis in the substrate is preferentially oriented in the width direction thereof, and the substrate is polarized in the longitudinal direction. Two electrodes are formed on both main surfaces of the substrate so as to oppose each other in the vicinity of the central part thereof. As a material used for the substrate, a piezoelectric ceramic composition primarily composed of a ceramic composition represented by the general formula CaBi4Ti4O15 is preferably used.Type: ApplicationFiled: March 1, 2002Publication date: September 12, 2002Applicant: Murata Manufacturing Co., Ltd.Inventors: Masahiko Kimura, Akira Ando, Takuya Sawada, Hirozumi Ogawa