Abstract: An actuator includes a fired ceramic substrate having a space opened downward, a first electrode formed on the upper surface of the fired ceramic substrate above the space, a piezoelectric/electrostrictive body formed on the first electrode so that the volume changes with input and output of electric power, and a second electrode formed on the piezoelectric/electrostrictive body. The piezoelectric/electrostrictive body is composed of Pb(Zr1-xTix)O3 or (Li, Na, K) (Nb, Ta)O3 as a main component and contains crystals oriented along the direction of an electric field. In the actuator, the degree of orientation of the piezoelectric/electrostrictive body can be increased regardless of the orientation of the substrate on which the piezoelectric/electrostrictive body is formed.

Abstract: To provide a film forming method capable of obtaining a high-quality perovskite type oxide thin film, piezoelectric element having a piezoelectric substance constituted of the thin film formed by the film forming method, liquid discharge head having the piezoelectric element and liquid discharge apparatus having the liquid discharge head. A method for forming a perovskite type oxide thin film having a composition expressed by (A1x, A2y A3z) (B1j, B2k, B3l, B4m B5n)Op is included, which is a film forming method having a plurality of steps for supplying a material containing the elements onto the substrate, dividing the elements A1 to A3 and B1 to B5 into a plurality of groups and supplying each material containing the elements included in the groups onto the substrate in separate steps.

Abstract: A monomorph type piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive body, which is composed of a non-lead based piezoelectric/electrostrictive crystalline body containing at least Nb, Ta, and one or more types of alkali metal element, which has a cubic crystal structure at a temperature higher than the phase transition point and at least any one of tetragonal and orthorhombic crystal structures at a temperature lower than the phase transition point, and which is curved to a large extent by a polarization treatment to take on a curved shape at a temperature lower than the phase transition point without application of a voltage after the polarization treatment. In the polarization treatment, an electric field is increased at a speed of from 0.1 (kV/mm)/sec or more to 5 (kV/mm)/sec or less, with applying the maximum electric field of from 2 kV/mm or more to 1.0 kV/mm or less.

Abstract: A laminated piezoelectric element capable of being sintered at low temperatures and high in piezoelectric properties is provided. The laminated piezoelectric element comprises a plurality of piezoelectric layers each comprising a composite oxide as a main constituent thereof and a plurality of internal electrode layers formed between the piezoelectric layers and containing Ag, wherein the piezoelectric layers are each comprised of a sintered body comprising the composite oxide, as a main constituent thereof, represented by (Pba-bMb) [(Zn1/3Nb2/3)xTiyZrz]O3 with the proviso that 0.96?a?1.03, 0?b?0.1, 0.05?x?0.15, 0.25?y?0.5, 0.35?z?0.6, x+y+z=1, and M represents at least one selected from Sr, Ca and Ba, and Ag in a content of 1.0% by weight or less (not inclusive of 0) in terms of Ag2O in relation to the main constituent.

Abstract: A sandwich piezoelectric ceramic ultrasonic atomizer has two piezoelectric ceramic plates (1) and one metal sheet (2). The metal sheet is securely clamped between the two piezoelectric ceramic plates. The two piezoelectric ceramic plates are respectively formed with a through-hole overlapping and communicated with each other, and the metal sheet completely covers the two through-holes. The present invention improves the reliability of adhesion between the metal sheet and the piezoelectric ceramic plates, thus increasing the energy conversion efficiency and extending the service life. When a bending vibration mode is adopted, the sheet metal diaphragm may be used, thereby simplifying the structure and reducing the processing cost.

Abstract: A process for producing a piezoelectric device constituted by a first electrode, at least one second electrode, and a piezoelectric film sandwiched between the first electrode and the at least one second electrode so that an electric field can be applied to the piezoelectric film. First, a seed layer of a material containing at least one element is formed on a substrate, and then the first electrode is formed on the seed layer. Next, the at least one element is diffused through the first electrode so that the at least one element precipitates on a surface of the first electrode on the opposite side to the seed layer, and then the piezoelectric film is formed on the first electrode.

Abstract: Disclosed is a piezoelectric/electrostrictive membrane element having a large flexural displacement with suppressed disadvantages such as the generation of a micro crack and a lattice defect due to a concentrated stress. The element includes a substrate of a ceramic material, a membranous piezoelectric/electrostrictive portion including a piezoelectric/electrostrictive body constituted of a large number of crystal particles 10, 20 of a lead zirconate titanate based piezoelectric/electrostrictive ceramic composition, and membranous electrodes electrically connected to the piezoelectric/electrostrictive portion.

Abstract: A piezoelectric buzzer includes a vibrating layer capable of withstanding temperatures in excess of 260° C. for at least five minutes while still maintaining its ability to vibrate and produce a buzzing sound at a level of at least 80 dB, and a high temperature piezoelectric material having a Curie temperature in excess of 260° C. and one or more of the following properties: a planar coupling coefficient (kp) of at least about 0.5; a longitudinal coupling coefficient (k33) of at least about 1500; and a mechanical quality factor (Qm) of at least about 2000. The piezo material may have a combination of these properties such that the product (kp2)(k33)(Qm) is at least about 1.5×106. The piezoelectric material may have a base formula of PbxSr(1-x)(Mn1/3Sb2/3)(1-y)(ZrzTi1-z)yO3 with x ranging from 0.95 to 0.99, y ranging from 0.92 to 0.97, and z ranging from 0.45 to 0.55, and may further include dopants in the amounts of about 0.4% CeO2, about 1% CuO, and about 4% Nb2O5.

Abstract: The invention discloses a tuneable resonator (100, 200, 300, 500, 600, 700, 900) with a substrate layer (140, 260, 360, 560, 660, 960), which substrate layer supports a structure with a first electrode (130, 240, 350, 550, 650). In connection to the first electrode there is arranged a layer (120, 230, 330, 530, 630, 930) of a material which can be brought to resonate. The resonator further comprises a second electrode (110, 210, 310, 510, 610, 710, 910) arranged in connection to said material which can be brought to resonate, and the material which can be brought to resonate is a ferroelectric material. The ferroelectric material is brought into resonance by applying an electrical field (DC, AC) between the first and the second electrode, the tuning being achieved by varying the electrical field.

Abstract: A piezoelectric/electrostrictive ceramic composition includes a Pb(Mg1/3Nb2/3)O3—PbTiO3—PbZrO3 ternary solid solution system composition as the major component, and further contains 0.05 to 3.0 mass % of Ni (in terms of NiO) and 0.01 to 1.0 mass % of Ag (in terms of AgO). The piezoelectric/electrostrictive ceramic composition can be used to form a piezoelectric/electrostrictive portion having excellent mechanical strength, and excellent piezoelectric/electrostrictive characteristics as well with seldom dielectric breakdown even under an application of a high electric field, at a relatively low firing temperature.

Abstract: A piezoactuator has at least one piezoelectric-active partial stack with piezoceramic layers arranged one over the other with piezoceramic material and electrode layers arranged between the piezoceramic layers, at least one piezoelectric-inactive terminating region arranged over the partial stack and at least one transition region between the partial stack and the terminating region, the partial stack, the terminating region and the transition region all connected together to give a monolithic complete stack. The transition region has a transition region stack with piezoceramic layers arranged one over the other and electrode layers arranged between the piezoceramic layers both have a form and are arranged on each other such that, in the stack direction of the transition region stack, from piezoceramic layer to piezoceramic layer there is a successive rotation about a main axis of the polarity and/or a rotation of the main axis of the electric control is provided.

Abstract: There is provided a resonator having a piezoelectric ceramic resonator which has excellent free-fall resistance. The resonator comprises a piezoelectric ceramic resonator 2 with a vibrating electrode formed, and a substrate 3 which supports the piezoelectric ceramic resonator 2, wherein the piezoelectric ceramic resonator 2 satisfies the condition of U?0.88×H+20.28, wherein U=maximum elastic energy (kJ/m3) per unit volume, and H=drop height (m) (H>1). The present invention can be applied to a resonator 1, wherein the substrate 3 has terminal electrodes 31, 32, and the piezoelectric ceramic resonator 2 is in electrical continuity with the vibrating electrode and is supported on the substrate 3 at both ends via a conductive stator 4.

Abstract: A multi-layer piezoelectric actuator with conductive polymer electrodes is described. The piezoelectric actuator comprises a stack of alternating conductive electrode layers and piezoelectric layers. The conductive electrode layers are comprised of a polymeric electrically conductive material. A device for cooling by forced-air convection may comprise the piezoelectric actuator, a fan blade and an alternating current supply. The piezoelectric actuator coupled with the fan blade and the alternating current supply, which is provided for vibrating the fan blade. A method of cooling by forced-air convection comprises supplying an alternating current to the piezoelectric actuator, wherein the alternating current has a frequency and causes the fan blade to vibrate with the same frequency.

Abstract: A piezoelectric device includes a piezoelectric film and an electrode film. The piezoelectric film is constituted of lead zirconium titanate represented by Pb1+X(ZrYTi1?Y)O3+X, where X is 0 or more and 0.3 or less and Y is 0 or more and 0.55 or less, the piezoelectric film having a tension stress. The electrode film applies a voltage to the piezoelectric film.

Abstract: A piezoelectric substance element has a piezoelectric substance film and a pair of electrodes connected to the piezoelectric substance film on a substrate, and a main component of said piezoelectric substance film is Pb(Zr, Ti)O3, a composition ratio of Zr/(Zr+Ti) is over 0.4 but less than 0.7, the piezoelectric substance film is a film having at last a tetragonal crystal a-domain and a c-domain within a range of ±10° with respect to the surface of said substrate, and a volume rate of the c-domain to the total of the a-domain and the c-domain is equal to or larger than 20% and equal to or smaller than 60%.

Abstract: Manufacturing sintered bodies having microstructures including microscopic grains having a grain diameter of less than 5 ?m, intermediate grains having a grain diameter of 5 ?m or more and less than 15 ?m, and coarse grains having a grain diameter of 15 ?m or more and 100 ?m or less enables to obtain high electric characteristics. Chemical compounds including metal elements are mixed so that the ratio of the elements is a composition expressed by (Li, Na, K)(Nb, Ta)O3, the mixture is calcined and crushed to obtain calcined/crushed powder. The powder is sintered in a constant temperature keeping process wherein temperature is kept constantly at a predetermined temperature within a range from 800 to 900° C. for a predetermined period of time in a heating process, and then the powder is further sintered by raising temperature to firing temperature, thereby the piezoelectric materials having superior electric characteristics are manufactured.

Abstract: The piezoelectric/electrostrictive body is represented by a composition formula ABO3 (A includes at least one element selected from the group consisting of Li, Na and K, and B includes at least one element selected from the group consisting of Nb, Ta, Sb and Mn), and the body is formed so that a main phase is a tetragonal system, and the orientation degree of a (001) face after a polarization treatment is smaller than that of a (100) face, in a plane vertical to the applying direction of an electric field applied so as to perform the polarization treatment. The present inventive piezoelectric/electrostrictive body has a ratio between a diffraction peak intensity I001 of the (001) face and a diffraction peak intensity I100 of the (100) face of I001/I100?1, in an X-ray diffraction pattern in the same plane after the polarization treatment.

Abstract: A stacked piezoelectric element obtained by alternately stacking a piezoelectric ceramic layer and an electrode layer, wherein said electrode layer mainly comprises an electrically conducting base metal electrode material, and the region held between the electrode layer positioned at the top of each ceramic layer and the electrode layer positioned at the bottom of each ceramic layer contains a material having no piezoelectricity, in which a constituent element of said material having no piezoelectricity is uniformly dispersed so as not to have local distribution of a distributed strength exceeding 2 times the distributed strength which is distributed in a largest number of places and is not 0.

Abstract: A piezoelectric ceramic composition includes: a composite oxide, as a main component thereof, represented by the composition formula, Pba[(Zn1/3Nb2/3)xTiyZrz]O3, wherein a, x, y and z satisfy the following relations, 0.96?a?1.03, 0.005?x?0.047, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1, and the following additives in the indicated percentages by mass in relation to the main component, Cu as a first additive, in a content ?, in terms of Cu2O, falling within a range 0<??0.5%; at least one of Li, Co, Ni, Ga and Mg, as a second additive, in a content ?, in terms of carbonate for Li, falling within a range 0<??0.1%, in a content ?1, in terms of oxide for Co, Ni and Ga, falling within a range 0<?1?0.2%, and in a content ?2, in terms of carbonate for Mg, falling within a range 0<?2?0.2%; and at least one of Ta, Nb, W and Sb, as a third additive, in a content ?, in terms of oxide, falling within a range 0<??0.6%.

Abstract: A piezoelectric substance has a multi-layer structure consisting of single crystal layers or uniaxial crystal layers of a perovskite oxide expressed by the general formula of ABO3 in which a main component at the site (A) is Pb, and a main component at the site (B) includes at least three elements selected from the group consisting of Mg, Zn, Sc, In, Yb, Ni, Nb, Ti and Ta. The multi-layer structure comprises a first crystal phase layer having any crystal structure selected from the group consisting of tetragonal, rhombohedral, pseudocubic, orthorhombic and monoclinic crystals; a second crystal phase layer having a different crystal structure from the crystal structure of the first crystal phase layer; and a boundary layer between the first crystal phase layer and the second crystal phase layer, and having a crystal structure gradually changing in a thickness direction of the layer.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: A method for inspecting a piezoelectric element includes first-inspection-signal application step of applying to the piezoelectric element a first inspection signal Vp(1) having a first predetermined voltage waveform; first-characteristic-value measurement step of measuring, as a first characteristic value, an electrical characteristic value of the piezoelectric element after application of the first inspection signal; second-inspection-signal application step of applying to the piezoelectric element a second inspection signal Vp(2) having a second predetermined voltage waveform and an electrical power greater than that of the first inspection signal; second-characteristic-value measurement step of measuring, as a second characteristic value, the electrical characteristic value of the piezoelectric element after application of the second inspection signal; and anomaly determination step of determining whether or not the piezoelectric element is anomalous on the basis of a value corresponding to the difference

Abstract: Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Qmax and good temperature characteristics of oscillation frequency F0 when applied in an oscillator utilizing third harmonic mode of thickness longitudinal vibration. The piezoelectric ceramic composition contains a composite oxide having a perovskite structure. The composite oxide has a composition expressed by the chemical formula (1), while satisfying 0.91???1.00, 0<??0.08, 0.125?x?0.300, 0.020?y?0.050, and 0.040?z?0.070. (Pb?Ln?)(Ti1?(x+y+z)ZrxMnyNbz)O3 ??(1) where Ln signifies at least one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A method for manufacturing a piezoelectric film element includes foursteps. The first is to form a bottom electrode on a Si substrate. The second is to form a seed layer with a layered perovskite structure on the bottom electrode. The third is to form a Bi4Ti3O12—BaBi4Ti4O15 based piezoelectric film on the seed layer. The final step is to form an top electrode on the piezoelectric film.

Abstract: The invention provides a (Li, Na, K)(Nb, Ta)O3 type piezoelectric/electrostrictive ceramic composition capable of being sintered at a low temperature and providing good electric field-induced strain at the time of high electric field application at a temperature for practical use. The piezoelectric/electrostrictive ceramic composition has an ABO3 type composition formula wherein lithium, sodium, and potassium are contained as first elements; niobium and tantalum are contained as second elements; oxygen (O) is contained as a third element; A/B ratio is higher than 1; and the ratio of the number of Ta atoms to the total number of atoms of the second elements is 10 mol % or more and 50 mol % or less, and comprises a perovskite type oxide wherein the first elements are A site composing elements and the second elements are B site composing elements.

Abstract: A piezoelectric material, characterized in that a main component of the piezoelectric substance is PZT, which has perovskite type structure expressed in Pb(ZrxTi1-x)O3 (x expresses an element ratio Zr/(Zr+Ti) of Zr and Ti in the formula), an element ratio Pb/(Zr+Ti) of Pb, Zr and Ti of the piezoelectric substance is 1.05 or more, and an element ratio Zr/(Zr+Ti) of Zr and Ti is 0.5 to 0.8 inclusive, and the piezoelectric substance has at least a perovskite type structure of monoclinic system.

Abstract: Disclosed are a piezoelectric element, which has a high withstand voltage and a longer durability life, a manufacturing method of the piezoelectric element, a liquid-jet head, a manufacturing method of the liquid-jet head, and a liquid-jet apparatus. The manufacturing method of a piezoelectric element includes the steps of: forming a piezoelectric layer by forming, on the lower electrode, a piezoelectric precursor film in which Pb, Zr and Ti are contained and the composition ratio of Pb, Zr and Ti becomes Pb/(Zr+Ti)=1.0 to 1.3 after the piezoelectric precursor film has been baked, and to which at least any one dopant selected from the group consisting of manganese, nickel and strontium is doped, and by then baking the piezoelectric precursor film for half an hour to three hours at 650 to 750° C.; and forming an upper electrode on the piezoelectric layer.

Abstract: To provide a piezoelectric single-crystal device which can stably attain an electromechanical coupling factor k31 of 60% or more in the lateral vibration mode and a method of manufacturing the same. Specifically, the piezoelectric single-crystal device has the polarization direction 3 in the [110] axis of a pseudocubic system and has the direction normal to an end face 10c of the piezoelectric device within the solid angle range of the [001] axis ±35° including the [001] axis approximately orthogonal to the polarization direction 3. The electromechanical coupling factor k31 in the direction orthogonal to the polarization direction 3, in the so-called lateral vibration mode, is 60% or more.

Abstract: A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO3 with a perovskite structure. A curvature radius of a warping of the substrate provided with the piezoelectric thin film due to deference between the first and the second thermal expansion coefficients is 10 m or more at room temperature.

Abstract: A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0<x1<1, 0<y1<1, 0?z1<1, x1+y1+z1=1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Nax2Ky2Liz2) NbO3 (0<x2<1, 0<y2<1, 0?z2<1, x2+y2+z2=1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.

Abstract: An inexpensive piezoelectric single-crystal device being excellent in the piezoelectric characteristics and having a complex perovskite structure can be provided by adding a specific additive to a lead magnesium niobate-lead titanate (PMN-PT) single crystal or a lead zinc niobate-lead titanate (PZN-PT or PZNT) single crystal. Specifically, the piezoelectric single crystal has a complex perovskite structure and is formed of a composition containing 35 to 98 mol % lead magnesium niobate [Pb(Mg1/3Nb2/3)O3] or lead zinc niobate [Pb(Zn1/3Nb2/3)O3], 0.1 to 64.9 mol % lead titanate [PbTiO3], and 0.05 to 30 mol % lead indium niobate [Pb(In1/2Nb1/2)O3] wherein calcium is substituted for 0.05 to 10 mol % lead in the composition.

Abstract: The invention provides a (Li, Na, K)(Nb, Ta, Sb)O3 type piezoelectric/electrostrictive ceramic composition excellent in the electric field-induced strain at the time of high electric field application. The piezoelectric/electrostrictive film 122 of a piezoelectric/electrostrictive actuator 1 is a sintered body of a piezoelectric/electrostrictive ceramic composition. The piezoelectric/electrostrictive ceramic composition comprises a perovskite type oxide comprising as A site elements, Li, Na, and K and as B site elements, Nb and Sb and having a ratio of the total number of atoms of the A site elements to the total number of atoms of the B site elements greater than 1 and not less than 1 mol % and not more than 10 mol % of the number of Sb atoms in the total number of atoms of the B site elements and a Mn compound added to said perovskite type oxide.

Abstract: Disclosed are a piezoelectric element in which crystallinity of a piezoelectric layer is improved, and which has uniform characteristics of the piezoelectric layer, a liquid-jet head using the piezoelectric element as well as a liquid-jet apparatus. The piezoelectric element includes: a lower electrode provided to one surface side of a substrate; a piezoelectric layer which is made of a piezoelectric material containing lead (Pb), zirconium (Zr) and titanium (Ti), and which is provided above the lower electrode; and an upper electrode provided above the piezoelectric layer, and in the piezoelectric element, a relative permittivity of the piezoelectric layer is 750 to 1500 and a coercive electric field of the piezoelectric layer is 10 to 40 kV/cm.

Abstract: A self-poling piezoelectric based MEMS device is configured for piezoelectric actuation in response to application of a device operating voltage. The MEMS device comprises a beam, a first electrode disposed on the beam, a layer of piezoelectric material having a self-poling thickness disposed overlying a portion of the first electrode, and a second electrode overlying the layer of piezoelectric material. The layer of piezoelectric material is self-poled in response to application of the device operating voltage across the first and second electrodes. In addition, the self-poled piezoelectric material has a poling direction established according to a polarity orientation of the device operating voltage as applied across the first and second electrodes.

Abstract: An electrical component includes a base. The base is made of a sintered ceramic, and at least one electrode that is inside the sintered ceramic. The at least one electrode has a surface that contains metal. The surface is adjacent to the sintered ceramic. In the component, a redox potential of the metal is less than or equal to a redox potential of copper.

Abstract: A lower electrode is formed on a silica glass substrate or a stainless substrate. Through a sputtering process, a thin film of aluminum nitride and/or zinc oxide is formed on the lower substrate so that the degree of dipole-orientation becomes 55% or more, and thereby a piezoelectric thin film is formed. And an upper electrode is formed on the piezoelectric thin film. A piezoelectric device has a piezoelectric layer made of aluminum nitride and/or zinc oxide. Aluminum nitride and zinc oxide with a crystal structure have inborn piezoelectric characteristics because their crystal structures are not symmetrical, they do not have Curie temperature unlike ferroelectrics, and in aluminum nitride and zinc oxide, magnetic transition does not occur even at high temperature, so that they never lose piezoelectric characteristics until crystal melts or sublimates.

Abstract: A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Tix, Zry, Mz)O3 (0<x<1, 0<y<1, 0?z<1, x+y+z=1) which extend nonparallel to the substrate. M represents one or more of Sn, Nb, Ta, Mo, W, Ir, Os, Pd, Pt, Re, Mn, Co, Ni, V, and Fe. The maximum diameters of the end faces of the columnar crystals are distributed from a value not exceeding 100 nm to a value of 500 nm or greater. The arithmetic average surface roughness of the columnar film is 10 nm or smaller, 20% or more of the columnar crystals have the maximum diameters not exceeding 100 nm, and 5% or more of the columnar crystals have the maximum diameters of 500 nm or greater.

Abstract: A piezoelectric ultrasonic motor having 2-dimensional positioning movement includes a stator. The stator includes a piezoelectric ceramic bar and an electrode disposed on the bar. Each bar includes two wings that are separated by a predetermined angle to form a predetermined shape. A power source is used to apply a voltage to the stator to excite a bending mode vibration in the each of the wings, and the combined motion of the two wings produces an elliptical motion at a tip of the wing. A load is operatively connected to the stator, such that a portion of the load in contact with the stator is driven to move linearly through a frictional force between the load and the stator, due to the elliptical motion at the tip of the wing.

Abstract: A piezoelectric ceramic composition includes: a composite oxide, as a main component thereof, represented by the composition formula, Pba[(Zn1/3Nb2/3)xTiyZrz]O3, wherein a, x, y and z satisfy the following relations, 0.96?a?1.03, 0.005?x?0.047, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1; and the following additives in the indicated percentages by mass in relation to the main component, Cu as a first additive, in a content ?, in terms of Cu2O, falling within a range 0<??0.5%; at least one of Dy, Nd, Eu, Gd, Tb, Ho and Er, as a second additive, in a content ?, in terms of oxide, falling within a range 0<??0.3%; and at least one of Ta, Nb, W and Sb, as a third additive, in a content ?, in terms of oxide, falling within a range 0<??0.6%.

Abstract: Disclosed are a piezoelectric element, which has a high withstand voltage and a longer durability life, a liquid-jet head and a liquid-jet apparatus. The piezoelectric element includes a lower electrode provided above a substrate, a piezoelectric layer provided above the lower electrode, and an upper electrode provided above the piezoelectric layer, and an electric resistivity of the piezoelectric layer is not lower than 20 M?·cm.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: A class of ceramic compositions according to the formula Pb(1-z)Mz(Mn1/3Sb2/3)x(ZryTi1-y)1-xO3 where M is selected to be either Sr or Ba, x is selected to be between 0.01 and 0.1, y is selected to be between 0.35 and 0.55, and z is selected to be between 0.01 and 0.10. In some embodiments of the above composition, one or more dopants is added to the compositions. The dopant(s) may be selected from the group comprising: PbO, CeO2, SnO2, Sm2O3, TeO2, MoO3, Nb2O5, SiO2, CuO, CdO, HfO2, Pr2O3, and mixtures thereof. The dopants can be added to the ceramic composition in individual amounts ranging from 0.01 wt % to up to 5.0 wt %. The preferred ceramic compositions exhibit one or more of the following electromechanical properties: a relative dielectric constant (?) of between 1200 and 2000, a mechanical quality factor (Qm) of between 1500 and 2800; a piezoelectric strain constant (d33) of between 250-450 pC/N, a dielectric loss factor (tan ?) of between 0.002-0.

Abstract: A method of fabricating a case accommodating a piezoelectric vibrating piece therein in a piezoelectric oscillator including the piezoelectric vibrating piece, including the steps of: applying deep drawing to a conductive plate member to shape the plate member in a nearly cylindrical shape with a bottom; pressing an inner surface of a bottom part of the plate member by a punch for step drawing while an outer surface of the bottom part is being abutted against a surface including an opening of a hole of a die having an inner diameter smaller than the outer diameter of the bottom part, whereby a projecting portion is formed on the outer surface of the bottom part; and cutting the plate member having the projecting portion at a predetermined position on the opening side thereof, whereby a case in a nearly cylindrical shape with a bottom having the projecting portion is obtained.

Abstract: A method for manufacturing a piezoelectric actuator, the method comprising: co-extruding alternating strips of a high permittivity material and a low permittivity material to form a green tape comprising said alternating strips of said high permittivity material and said low permittivity material; cutting said green tape to form a plurality of sheets, each sheet comprising a high permittivity region and at least two low permittivity regions adjacent to the high permittivity region; applying at least one conductive region to each one of two or more of the sheets to overly the high permittivity region and to leave exposed at least one low permittivity region; and stacking a plurality of sheets to form an actuator stack comprising adjacent sheets, wherein the or each conductive region on each sheet is offset with respect to a conductive region on a different sheet within the actuator stack.

Abstract: An electrical component includes a substrate, a first electrode layer, a structured growth layer that is thinner than the first electrode layer, a piezoelectric layer, and a second electrode layer. The growth layer is on the first electrode layer, the growth layer is structured relative to the first electrode layer, and the growth layer has a smaller surface area than the first electrode layer. The growth layer may be selected to support ordered growth relative to the piezoelectric layer.

Abstract: A multilayer piezoelectric element 20 includes a plurality of piezoelectric layers 11 and a plurality of inner electrode layers 12 alternately stacked, a first outer electrode 18 that electrically couples together every other inner electrode layers 12 in the lamination direction, and a second outer electrode 19 that electrically couples together the remaining inner electrode layers 12. The piezoelectric layers 11 are obtained by molding and firing a mixture containing a Pb component, a Zr component, a Ti component, a Sr component, a Nb component, and a Zn component. When the piezoelectric layers 11 are each represented by general formula Pb(ZraTi1-a)O3+bSrO+cNbO2.5+dZnO, the relative amounts of the individual components, for example, satisfy the relationships a=0.51, b=2.0×10?2, c=1.50×10?2, d=0.5×10?2, and c/d=3.0.

Abstract: An ultrasound transducer includes an array of PZT elements mounted on a non-recessed distal surface of a backing block. Between each element and the backing block is a conductive region formed as a portion of a metallic layer sputtered onto the distal surface. Traces on a longitudinally extending circuit board—preferably, a substantially rigid printed circuit board, which may be embedded within the block—connect the conductive region, and thus the PZT element, with any conventional external ultrasound imaging system. A substantially “T” or “inverted-L” shaped electrode is thereby formed for each element, with no need for soldering. At least one longitudinally extending metallic member mounted on a respective lateral surface of the backing block forms a heat sink and a common electrical ground. A thermally and electrically conductive layer, such as of foil, transfers heat from at least one matching layer mounted on the elements to the metallic member.

Abstract: A stator and a piezo ultrasonic motor including the same are provided. The piezo ultrasonic motor includes a stator including an elastic body having a flat portion at its outer surface and a central hole penetrating the center of the stator with a predetermined size, and a piezoelectric body including a first internal piezoelectric body and a second internal piezoelectric body integrally disposed parallel to each other in a longitudinal direction of the flat portion and providing an external force deforming the elastic body when an AC voltage is applied, a rotor inserted in the central hole and including a contact frictionally contacting an inner surface of the central hole, an elastic part providing an elastic force maintaining close attachment of the contact to the stator. Accordingly, the manufacturing cost decreases by reducing the number of elements and simplifying a structure, and a stable driving characteristic can be achieved.

Abstract: A piezoelectric laminate including a base and a first piezoelectric layer formed above the base and including potassium sodium niobate. The first piezoelectric layer is shown by a compositional formula (KaNa1-a)xNbO3, “a” and “x” in the compositional formula being respectively 0.1<a<1 and 1?x?1.2.

Abstract: A piezoelectric element 1 includes a lower electrode 2, a piezoelectric film 3 and an upper electrode 4 stacked in this order. The surface of the upper electrode 4 of the piezoelectric element 1 is exposed to a zirconium compound 6.