Abstract: The present invention relates to composite piezoelectric apparatus, transducers and methods of manufacture. In an embodiment, a composite piezoelectric apparatus has a sacrificial base and pillar array. Different volume percents of piezoelectric material are used in the sacrificial base and pillar array. A first volume percent in the base is lower than the second volume percent in the pillar array. In this way, the sacrificial base can be easily removed from the pillar array after the base and pillar array are sintered in the manufacture of a final composite piezoelectric transducer. A method of manufacturing a composite piezoelectric transducer from a sacrificial base and pillar array and a composite piezoelectric transducer made by the method are provided. A composite piezoelectric transducer stack is provided.

Abstract: A piezoelectric device includes a first electrode film, a second electrode film, and a piezoelectric thin film enclosed by the first electrode film and second electrode film, in which the piezoelectric thin film is an oxide piezoelectric thin film having an oxygen deficiency amount of more than 0% and not more than 10% of the stoichiometric composition. The piezoelectric device composed of the piezoelectric thin film having such oxygen deficiency has a greater piezoelectric performance as compared with the oxide piezoelectric thin film in an oxidized state of stoichiometric composition, and by manufacturing under such a condition, the film forming speed is increased, so that the mass producibility can be improved.

Abstract: A transducer having a ceramic element in which the ceramic is elevated above a polymer and a method of manufacturing the transducer. The transducer comprises a piezo-composite element comprising a ceramic element embedded in epoxy. In an array, the ceramic elements may be in the form of posts. The plurality of ceramic elements is slightly elevated above the polymer and in staggered arrangement with the polymer. The element is manufactured by first grinding the face of the composite and removing damaged ceramic by acid etching the ceramic. The epoxy is removed by plasma etching so that the ceramic is above the epoxy. The composite is sputter plated so that a maximum temperature that could damage the plating is not exceeded. The ceramic is then poled so that a maximum temperature that could damage the plating is not exceeded. Contacts are then attached to the plating adjacent the ceramic.

Abstract: A micro-electromechanical dimensioned bimorph structure includes a first element layer structure, and a second element layer structure. The element layer structures are provided in various combinations, including piezoelectric/piezoelectric, antiferroelectric/antiferroelectric or antiferroelectric/piezoelectric. The layer thickness of the element structure is less than 100 ?m. A bonding layer bonds the first element structure directly to the second element structure, and the bonding layer thickness is less than 10 ?m. The bimorph structure can be made in various forms including a cantilever or a diaphragm. Microfluidic devices using the bimorph structures may also be constructed.

Abstract: The present invention relates to a sensor for measuring actual loads acting upon a surface of a mechanical component, wherein as a sensor an amorphous hydrocarbon layer with piezoresistive properties is used, which is preferably doped with at least one metallic and/or non-metallic element and is connected by contacts to a measuring device; the present invention further relates to the use of carbon layers having piezoresistive properties and preferably doped with metallic and/or non-metallic elements as a sensor for load measurements, as well as to a method of measuring actual loads at stressed surfaces of mechanical components, wherein as a measuring sensor an amorphous carbon layer preferably doped with metallic and/or non-metallic elements is used.

Abstract: A laminated piezoelectric transformer is provided using the longitudinal vibration modes for step-up voltage conversion applications. The input portions are polarized to deform in a longitudinal plane and are bonded to an output portion. The deformation of the input portions is mechanically coupled to the output portion, which deforms in the same longitudinal direction relative to the input portion. The output portion is polarized in the thickness direction relative its electrodes, and piezoelectrically generates a stepped-up output voltage.

Abstract: A piezoelectric porcelain composition containing a complex oxide having a perovskite structure mainly composed of Pb, Zr, and Ti; and the following component (a) and/or (b), or component (A) and/or (B): (a) Ag and/or an Ag compound, and Mo and/or an Mo compound (b) silver molybdate [Ag2MoO4] (A) Ag and/or an Ag compound, Mo and/or an Mo compound, and W and/or a W compound (B) silver molybdate-tungstate [Ag2Mo(1?X)WXO4](where X is a number from 0.3 to 0.

Abstract: A piezoelectric actuator includes a vibration plate 26, a common electrode 27 formed on the vibration plate 26, a piezoelectric element 29 formed on the common electrode 27, a crystal control layer 28 formed on the piezoelectric element 29, a separate electrode 33 formed on the crystal control layer 28, and an electrode line 34 formed on the piezoelectric element 29. The crystal control layer 28 is formed in the displacement region. The crystalline structure of a piezoelectric element 29a in the displacement region is a perovskite structure, and that of a piezoelectric element 29b in the wiring region is a pyrochlore structure.

Abstract: A composition for forming a piezoelectric containing a dispersoid obtained from metallic compound, wherein the content of hafnium in the composition is 3,000 ppm or less.

Abstract: The present invention provides a composite piezoelectric transducer having a piezoelectric ceramic, an organic polymer, and an electrode group formed only on surfaces of the piezoelectric ceramic. The groove is formed, having a depth 50% to 90% of the thickness of the piezoelectric ceramic. A ratio, between a width of a non-diced area formed by forming the groove on the piezoelectric ceramic and the depth of the groove is 0.2 to 0.7. An organic polymer is filled in the groove formed in the piezoelectric ceramic in a state including bubbles. The electrode group comprises a first electrode and a second electrode, the first electrode being formed on a first surface of the piezoelectric ceramic, and the second electrode being formed on a second surface of the piezoelectric ceramic, a side surface thereof, or on the second surface, the side surface and the first surface, the second surface being opposite to the first surface in the direction of the thickness of the piezoelectric ceramic.

Abstract: In a piezoelectric element comprising a first electrode 2 provided on a substrate 1, a piezoelectric material 3 provided on the first electrode 2 and a second electrode 4 provided on the piezoelectric material 3, the piezoelectric material 3 is configured so as to have a perovskite type crystal structure which is represented by a formula ABO3 and in which the main component for the A site is Pb and the main components for the B site are Zr, Ti and Pb, and configured so that a ratio of Pb atoms to all atoms in the B site is more than 3% and not more than 30%. Namely, the piezoelectric material 3 is formed so as to contain Pb excessively and the excess Pb atoms are activated to be Pb4+ during formation of the piezoelectric material 3 and then introduced into the B site.

Abstract: A piezoelectric ceramic composition that is based on a layered bismuth compound composed of Sr, Bi, Nb, oxygen, contains an additional monovalent metallic element. The piezoelectric ceramic composition has an elevated Curie point, is highly reliable at higher temperatures, that is, minimizes the reduction in the piezoelectric effect, and is useful as a material for piezoelectric ceramic devices that contain little or no lead or lead compounds. The layered bismuth compound contains not more than about 0.125 mol and more than 0 mol of the monovalent metallic element for 1 mol of Nb.

Abstract: A lead zirconate titanate-based thin film is an epitaxial crystal thin film and has a chemical composition represented by the general formula Pb1-xLnxZryTi1-yO3 (wherein Ln represents any one selected from the group consisting of lanthanum, lanthanoid elements, niobium, calcium, barium, strontium, iron, manganese and tin; and 0?x<1, 0.43?y?0.65) and whose orientation is {111} (including orientations whose tilt angle from the direction perpendicular to the substrate surface is within 15°).

Abstract: A piezoelectric actuator includes: a buffer layer that is composed of an oxide or a nitride epitaxially formed on a Si substrate; a bottom electrode formed on the buffer layer, being composed of a transition metal oxide, and having a pseudo-cubic (100) or (111) orientation with a perovskite structure; a piezoelectric layer formed on the bottom electrode being composed of (Ba1?xMx)(Ti1?yZy)O3 (where (M=Sr or Ca and 0?x?0.3) (Z=Zr or Hf and 0?y?0.2)) with a pseudo-cubic (001) or (111) orientation; and a top electrode that is formed on the piezoelectric layer. In this way, a piezoelectric actuator that uses barium titanate as the piezoelectric body and does not include Pb is provided.

Abstract: The present invention proves a piezoelectric composite comprising, as main components, a piezoelectric ceramic and a polymer having a bulk density of 0.4 g/cm3 or less, the polymer including bubbles dispersed therein. Therefore, the piezoelectric composite of the present invention has a reduced bulk density, a high coefficient of electromechanical coupling in spite of the piezoelectric ceramic having a low volume ratio, a reduced acoustic impedance and a good processing character.

Abstract: There is provided a piezoelectric/electrostrictive film type device comprising: a substrate formed of a ceramic, at least one piezoelectric/electrostrictive portion formed of a piezoelectric/electrostrictive porcelain composition on the substrate, and at least one pair of electrodes on the substrate, electrically connected to the piezoelectric/electrostrictive portion and including a positive electrode and a negative electrode. The piezoelectric/electrostrictive porcelain composition contains a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition as a major component, and contains 0.05 to 3.0 wt % of NiO, and contains 2.0 to 22.0 mol % of Si with respect to the total number of moles of Mg and Ni. The piezoelectric/electrostrictive portion is solidly attached onto the substrate directly or via the positive electrode or the negative electrode.

Abstract: A piezoelectric single crystal device for actively employing the electromechanical coupling factor k31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

Abstract: Materials having different compositions are arranged to prepare a molded form in which the sound velocity characteristic is varied from high frequency to low frequency from the center toward the periphery. An ultrasonic wave-radiating face of the molded form and the back face of the ultrasonic wave-radiating face are arranged in parallel to each other to prepare a transducer in which the center region can transmit/receive high-frequency ultrasonic waves and the periphery region can transmit/receive low-frequency ultrasonic waves.

Abstract: A piezoelectric element contains a piezoelectric ceramic body having a layered perovskite structure, and has the C axis selected and oriented in the thickness direction. In the piezoelectric ceramic body, line shaped electrodes are formed perpendicular to the C axis selected and oriented. The electrodes exposed at both of the end faces of the piezoelectric ceramic body are covered with conductive materials and insulation materials. The piezoelectric ceramic body is polarized in the opposite directions on both of the sides of electrodes arranged in the width direction. Moreover, external electrodes are formed on the faces where the conductive materials and the insulation materials are formed, whereby two groups of the electrodes are arranged in an interdigital electrode form.

Abstract: A multi-layer composite transducer array includes at least one pair of composite transducers with an electrical and mechanical isolation layer disposed therebetween. Each composite transducer is defined by a composite panel having a common electrode coupled to a first surface and electrode segments electrically isolated from one another and coupled to a second surface. Each pair of composite transducers is configured such that the electrode segments associated with the pair's composite transducers oppose and are aligned with one another. The isolation layer has dielectric material segments that are sized, shaped and aligned in correspondence with opposing and aligned ones of the electrode segments associated with the pair's transducers. Spaces formed in the isolation layer between the dielectric material segments are filled with a viscoelastic material.

Abstract: A thin film device comprises: a substrate and a thin film having a thickness formed on the substrate, wherein the thickness of the thin film is at least 1 micrometer, a crystal structure having crystals with a grain size formed within the thin film, wherein the grain size of a majority of the crystals includes a height to width ratio greater than three to two.

Abstract: A piezoelectric shear resonator has a substantially rectangular-column piezoelectric element that excites a shear-vibration mode and that has opposing substantially rectangular shear strain surfaces. The shear strain surfaces each have an aspect ratio at which the electromechanical coupling factor reaches substantially a maximum value. When the vertical dimension of the shear strain surfaces is D and the horizontal dimension thereof is Le, the aspect ratio Le/D is expressed by Le/D={?·(S44E/S33E)1/2+?}±0.3, where S44E and S33E are elastic compliances, ?=0.27·n+0.45, ?=1.09·n+0.31, and n is a positive integer.

Abstract: It is an object of the present invention to provide a piezoelectric actuator which uses strontium ruthenate as the material of the bottom electrode, and which uses PMN-PT as the material of the piezoelectric layer. This piezoelectric actuator comprises a base layer (31, 20) of SiO2 or Si ((100) orientation or (110) orientation), a buffer layer (41) constituted by strontium ruthenate (SRO), and a piezoelectric layer (44) constituted by a relaxor dielectric (PMN-PT) with a rhombohedral or quasi-cubic crystal structure oriented in the (001) direction at room temperature.

Abstract: In a gallium phosphate crystal, a crystallographic Y-axis and a Z-axis that have been rotated about an X-axis counterclockwise through an angle ? is referred to as a Y?-axis and a Z?-axis, respectively, where the angle ? is in a range from 10° to 20°. A piezoelectric crystal material made of gallium phosphate is provided as a plate-shaped member which is elongate in an X-axis direction and cut from the gallium phosphate crystal parallel to an X-Z? crystal plane of the gallium phosphate, and the plate-shaped member has sides parallel to an axis that is obtained by rotating the Y?-axis counterclockwise about the X-axis in an angular range from 1° to 3°.

Abstract: A piezoelectric/electrostrictive film device is provided, including a piezoelectric/electrostrictive layer and at least a pair of electrodes formed on the piezoelectric/electrostrictive layer. A perovskite piezoelectric/electrostrictive material of the piezoelectric/electrostrictive layer contains Pb, and the perovskite piezoelectric/electrostrictive material contains MnO2 in an amount of 0.1 to 0.5% by weight. Specifically, the perovskite piezoelectric/electrostrictive material contains Pb(Mg1/3Nb2/3)O3—PbZrO3—PbTiO3 in which a part of Pb is substituted with Sr.

Abstract: A composite piezoelectric element has a layered configuration of a plurality of unit composite sheets. Each of the unit composite sheets includes a resin layer and a plurality of columnar piezoelectric elements arranged on the resin layer.

Abstract: A piezoelectric material includes a polycrystalline piezoelectric compound having a component composition defined as Sr2-xCaxNaNb5O15, where x=0.05 to 0.35, and at least one rare earth oxide compound selected from the group consisting of Y2O3, La2O3, Dy2O3, Nd2O3, Yb2O3, Sm2O3, Er2O3, Gd2O3 and Pr6O11 to be added to the piezoelectric compound by 0.5 to 3.0 wt %. Moreover, a method of manufacturing the piezoelectric material includes blending ceramic materials, synthesizing, milling, pressing and sintering processes. In the synthesizing process, calcining is conducted at a temperature in a range from 1,050° C. to 1,150° C. for 2 to 12 hours in the atmosphere. And the sintering process includes first firing at temperature in a range from 1,180° C. to 1,270° C. for 4 to 8 hours in the atmosphere, and second firing at a temperature in a range from 1,370° C. to 1,400° C. for 10 to 75 hours in the atmosphere.

Abstract: To provide a piezoelectric thin film having an improved and stable characteristic by controlling stress applied during forming a piezoelectric thin film and providing the piezoelectric thin film having a perovskite structure. A thin film piezoelectric element in which a lower electrode is formed on a substrate, a piezoelectric thin film containing lead is formed on the lower electrode, and an upper electrode is further placed on the piezoelectric thin film, characterized in that the piezoelectric thin film is a dielectric with the perovskite structure having lead, zirconium, and titanium as the main ingredients, and is in a composition region in which, in the composition of the whole piezoelectric thin film, the. Zr/(Zr+Ti) ratio is not less than substantially 0.53, and has a crystal structure of the tetragonal system in which a c axis is longer than an a axis.

Abstract: There is put forward a piezolectric element for converting pressure signals into electrical signals and vice versa, with a porous homogeneous ceramic body and with at least two electrodes attached to the ceramic body. The porous ceramic body comprises open pores and is preferably hermetically sealed on the whole surface with an elastic coating. Furthermore there is suggested an oscillation transducer with the piezolement which is accommodated in a housing. The piezolectric element is with one end face rigidly connected to the base of the housing. The other end face represents a surface which is sensitive to oscillations, which preferably is not covered by the housing. The volume of the housing is filled with a casting compound, wherein the piezolectric element is mechanically decoupled from the casting compound.

Abstract: A multi-layered piezoelectric device includes a plurality of piezoelectric portions and a plurality of electrodes electrically connected to the piezoelectric portions, that are formed in layers on a ceramic substrate. A first piezoelectric portion is made of a piezoelectric ceramic composition containing Ni in an amount of 0.08 to 0.31% by mass (in terms of NiO), and second and upper piezoelectric portions are made of a piezoelectric ceramic composition of higher Ni content than in the first piezoelectric portion. An electrode is provided at least between the first piezoelectric portion and the second piezoelectric portion.

Abstract: A piezoelectric/electrostrictive device is provided, including a ceramic substrate having at least one piezoelectric/electrostrictive layer made of a piezoelectric/electrostrictive ceramic composition and at least one pair of electrodes electrically connected to the piezoelectric/electrostrictive layer formed thereon. The piezoelectric/electrostrictive ceramic composition contains a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 system composition as a major component, wherein part of Pb is substituted with at least one of Sr and La, and contains Ce in an amount of 0.01 to 0.50% by mass in terms of CeO2. The piezoelectric/electrostrictive layer is solidly attached to the substrate directly or via part of the electrodes.

Abstract: A method for producing transducers having a 1-3 composite structure. The transducer element includes a plurality of thin piezoceramic wafers which are electroded on opposing major surfaces. The spaced wafers are separated by a passive polymer layer in a composite structure and the electrodes on the opposing major surfaces are connected to different ones of top and bottom electrode surfaces.

Abstract: A laminate type piezoelectric element having an improved piezoelectric property is provided. Vibration electrodes are arranged in a piezoelectric body, and high-order vibration of the thickness vibration is excited. The piezoelectric ceramic includes two ceramic piezoelectric layers which are laminated, and are integrally formed. Each of the ceramic piezoelectric layers contains ceramic crystal grains having shape anisotropy and spontaneous polarization preferentially oriented in one plane. The in-plane direction of this plane is perpendicular to the principal surfaces of the ceramic piezoelectric layers. The ceramic piezoelectric layers are polarized in the same thickness direction.

Abstract: A piezoelectric ceramic composition comprises a composite perovskite type oxide of Pb(Ni1/3Nb2/3)O3 and simple perovskite type oxides of PbTiO3 and PbZrO3 as main components. The composition range of the main components exists in an area surrounded by lines for connecting respective composition points, i.e., a point A (X=40, Y=37, Z=23), a point B (X=36, Y=37, Z=27), a point C (X=33, Y=40, Z=27), and a point D (X=37, Y=40, Z=23) in a triangular coordinate system defined by apexes of Pb(Ni1/3Nb2/3)O3, PbTiO3, and PbZrO3, provided that Pb(Ni1/3Nb2/3)O3 amounts to X molar %, PbTiO3 amounts to Y molar %, and PbZrO3 amounts to Z molar %. The composition makes it possible to realize a large strain amount while suppressing the relative dielectric constant to be low. The composition is preferably usable for an piezoelectric actuator of an ink-jet head.

Abstract: A piezoelectric vibrator uses aluminum nitride as piezoelectric material and thickness sliding vibration as the primary vibration. A polarization direction of the primary vibration is along the longitudinal direction of its vibrating element. This vibrator eliminates undesired resonance, caused by a width of the vibrating element, from a vicinity of a resonance frequency of the primary vibration. Vibrating element 1 has width W and thickness H defined as follows: 2.0≦W/H≦4.0 or 4.3≦W/H≦5.7 or 6.2≦W/H≦7.8 or 8.2≦W/H≦9.8.

Abstract: A piezoelectric ceramic composition that is based on a layered bismuth compound composed of Sr, Bi, Nb, oxygen, contains an additional monovalent metallic element. The piezoelectric ceramic composition has an elevated Curie point, is highly reliable at higher temperatures, that is, minimizes the reduction in the piezoelectric effect, and is useful as a material for piezoelectric ceramic devices that contain little or no lead or lead compounds. The layered bismuth compound contains not more than about 0.125 mol and more than 0 mol of the monovalent metallic element for 1 mol of Nb.

Abstract: A piezoelectric type electric acoustic converter achieves large improvement in shatter resistance strength, increased operating efficiency and reduced size, and includes piezoelectric ceramic layers which are laminated to form a laminate. Main surface electrodes are disposed on the front and back main surfaces of the laminate, and an internal electrode is disposed between respective ceramic layers. A side electrode which connects the main surface electrodes, and a side electrode which is conducted to the internal electrode are formed on the side surface of the laminate. All the ceramic layers are polarized in the same direction, and by applying an alternating signal between the main surface electrodes and the internal electrode, bending vibration of the laminate occurs. The front and back surfaces of the laminate is almost entirely covered with resin-layers.

Abstract: A multilayered piezoelectric/electrostrictive device includes a substrate 1, a plurality of piezoelectric/electrostrictive portions 2 and 3, and a plurality of electrodes 4, 5, and 6; the piezoelectric/electrostrictive portions 2 and 3 and the electrodes 4, 5, and 6 being alternately layered on the substrate 1, and the piezoelectric/electrostrictive portion 12 positioned in the lowermost layer being anchored to the substrate 1 directly or through the electrode 4. The ratio &agr; given by the average particle size (A) (&mgr;m) of the piezoelectric/electrostrictive ceramic used for forming the piezoelectric/electrostrictive portion to the thickness (B) (&mgr;m) of the piezoelectric/electrostrictive portion satisfies the relationship expressed by “0.02≦&agr;≦0.6” in each of the piezoelectric/electrostrictive portions 2 and 3.

Abstract: A piezoelectric device comprising a first electrode film, a second electrode film, and a piezoelectric thin film enclosed by the first electrode film and second electrode film, in which the piezoelectric thin film is an oxide piezoelectric thin film having an oxygen deficiency amount of more than 0% and not more than 10% of the stoichiometric composition. The piezoelectric device composed of the piezoelectric thin film having such oxygen deficiency has a greater piezoelectric performance as compared with the oxide piezoelectric thin film in oxidized state of stoichiometric composition, and by manufacturing in such condition, the film forming speed is increased, so that the mass producibility can be improved.

Abstract: A piezoelectric single crystal device for actively employing the electromechanical coupling factor k31 in the direction orthogonal to the polarization direction is provided. Specifically, with the polarization direction as [001] axis of a pseudocubic system, an angle between the normal direction 1 of the piezoelectric device edge face and the direction n orthogonal to the domain structure within the crystal face including [010] and [100] axes orthogonal to the polarization direction is in the range 0 to 15° or 40 to 50°.

Abstract: A piezoelectric porcelain composition containing a complex oxide having a perovskite structure mainly composed of Pb, Zr, and Ti; and the following component (a) and/or (b), or component (A) and/or (B):

Abstract: A piezoelectric contains comprises a plurality of piezoelectric particles made from a piezoelectric material such as lead titanate zirconate and a dielectric made from a dielectric material, such as a composite perovskite compound, having a higher dielectric constant then the piezoelectric material, the dielectric existing in gaps between the piezoelectric particles. When poling to produce a piezoelectric ceramic, the poling is uniformly performed, and nearly all of the electric field is applied to the piezoelectric particles. Thus, the dispersion of the piezoelectric properties can be reduced, and the piezoelectric properties can be enhanced.

Abstract: A piezoelectric ceramic composition is expressed by the formula Pb&agr;[{Niw/3Nb1−(w/3)}xTiyZrz]O3. The B site variables x, y, and z lie in a predetermined region in a ternary diagram. The Ni—Nb molar proportion variable satisfies the relationship 0.85≦w<1.00. The Pb molar content &agr; is reduced from the stoichiometric ratio to a value satisfying the relationship 0.950≦&agr;≦0.995. At least one element selected from the group consisting of Sr, Ca, and Ba may be substituted for about 10 mol percent of the Pb.

Abstract: When a piezoelectric material is manufactured by hydrothermal method, the proper amount of lead contained in the piezoelectric film can be ensured and decreases in piezoelectric characteristics can be prevented. A method for manufacturing a piezoelectric material expressed by the formula ABO3, containing an element “a” as the element expressed by A above, and having a perovskite crystal structure, comprises a first step of producing an oxide containing an element “a′”, and a second step of producing a piezoelectric material by subjecting the oxide produced in the first step to a hydrothermal processing using an aqueous solution containing the element “a”, wherein the amount of the element “a”, contained in the piezoelectric material produced in the second step is increased over the amount of the element “a” contained in the oxide produced in the first step.

Abstract: There is provided a piezoelectric/electrostrictive film type device comprising: a substrate formed of a ceramic, at least one piezoelectric/electrostrictive portion formed of a piezoelectric/electrostrictive porcelain composition on the substrate, and at least one pair of electrodes on the substrate, electrically connected to the piezoelectric/electrostrictive portion and including a positive electrode and a negative electrode. The piezoelectric/electrostrictive porcelain composition contains a PbMg1/3Nb2/3O3—PbZrO3—PbTiO3 ternary solid solution system composition as a major component, and contains 0.05 to 3.0 wt % of NiO, and contains 2.0 to 22.0 mol % of Si with respect to the total number of moles of Mg and Ni. The piezoelectric/electrostrictive portion is solidly attached onto the substrate directly or via the positive electrode or the negative electrode.

Abstract: A method for producing an energy trap piezoelectric resonator which operates in a thickness longitudinal vibration mode and which includes a piezoelectric member and first and second vibrating electrodes disposed on respective major surfaces of the piezoelectric member, involves the use of a piezoelectric material having an R value and an A value which are selected such that Qe=C/(R×A), where R and A are the average pore size in micrometers and the porosity in percent of the piezoelectric member, respectively. Here, Qe is a value at a frequency to be used and C is a constant that is determined by the piezoelectric material of the piezoelectric member. An energy trap, thickness longitudinal piezoelectric resonator produced by this method has a sufficiently high response to a vibration mode to be used, without any limitation on the type of piezoelectric material and size of the piezoelectric member and the frequency to be used.

Abstract: An element having certain superior piezoelectric characteristics at all times and of which process control in production of the element is relatively easy. In a piezoelectric element in which electrodes 6, 8 are arranged on both face sides of a piezoelectric film 7 respectively, the piezoelectric film is provided with an oxide layer 7a containing 0 or not more than 15 weight percent of Pb arranged on a face of the piezoelectric film, the face being in contact with the electrode, and the oxide layer being formed of a composite oxide expressed by a chemical formula ABO3 or of a solid solution of one or not less than two kinds of composite oxides respectively expressed by the chemical formula ABO3.

Abstract: A piezoelectric ceramic composition comprises a composite perovskite type oxide of Pb(Ni1/3Nb2/3)O3 and simple perovskite type oxides of PbTio3 and PbZrO3 as main components. The composition range of the main components exists in an area surrounded by lines for connecting respective composition points, i.e., a point A (X=40, Y=37, Z=23), a point B (X=36, Y=37, Z=27), a point C (X=33, Y=40, Z=27), and a point D (X=37, Y=40, Z=23) in a triangular coordinate system defined by apexes of Pb(Ni1/3Nb2/3)O3, PbTiO3, and PbZrO3, provided that Pb(Ni1/3Nb2/3)O3 amounts to X molar %, PbTiO3 amounts to Y molar %, and PbZrO3 amounts to Z molar %. The composition makes it possible to realize a large strain amount while suppressing the relative dielectric constant to be low. The composition is preferably usable for an piezoelectric actuator of an ink-jet head.

Abstract: In a piezoelectric ceramic containing a bismuth layer compound containing Ca, Bi, Ti, and O, as a main component, the molar ratio of Ca to Bi to Ti in the bismuth layer compound, which is the main component, is represented by a:b:c and formulas 0.15≦a/c<0.25 and 3.5≦(2a+3b)/c≦3.88 are satisfied.

Abstract: A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by carefully controlled drying, soft baking, and annealing conditions.