Abstract: A method of manufacturing an actuator device includes forming a Zr layer on one surface of a substrate, forming a ZrO2 layer by oxidizing the Zr layer, forming a lower electrode on top of the ZrO2 layer, forming a piezoelectric layer on top of the lower electrode, and forming an upper electrode on top of the piezoelectric layer. In the method, in forming the Zr layer, the Zr layer is formed through crystal growth of Zr, and the Zr layer thus formed has special crystal regions that protrude from the opposite surface of the Zr layer from the substrate. Each special crystal region has a height of 10 to 100 nm and a diameter of 0.1 to 1 ?m when viewed from above, and the special crystal regions exist with a density of 1.0×106 to 1.0×103/cm2.

Abstract: A multilayer electrical component includes a plurality of ceramic layers disposed along an axis, a plurality of electrode layers disposed between the plurality of ceramic layers and in electrical contact with the ceramic layers, and a ceramic breach layer disposed between a first and a second ceramic layer of the plurality of ceramic layers along the axis. The ceramic breach layer has a lower breach stability than the plurality of ceramic layers with regard to tensile stresses in the direction of the axis.

Abstract: A tuning fork type piezoelectric vibrating piece, comprising: a base unit having a base electrode for an external connection; a fork shaped arm unit extending from the base unit; a groove portion at least on a surface or a rear surface of the arm unit; a groove electrode on the groove portion; a side surface electrode on the arm unit without the groove portion; a first electrode connecting the base unit and the side surface electrode or the groove electrode; a second electrode connecting the groove electrode and the side surface electrode; and a side surface electrode set at a predetermined distance from the bottom of the fork part of the base unit. The piezoelectric vibrating piece may be packaged with a base electrode connected to an external output terminal. The piezoelectric oscillator may have an amplifier circuit and a feedback circuit with a resonant element determining the resonant frequency.

Abstract: A piezoelectric film forming method includes the step of forming on a substrate, a piezoelectric film formed by the elements of a target by opposing a target having a composition according to the composition of film to be formed, and releasing the elements from the target by a vapor phase growth method using plasma. The following formulae (1) and (2) or (3) and (4) are satisfied. 400?Ts(° C.)?500 ??(1) 30?D(mm)?80 ??(2) 400?Ts(° C.)?600 ??(3) 30?D(mm)?100 ??(4) wherein Ts (° C.) and D (mm) respectively represent the film-forming temperature and the distance between the substrate and the target.

Abstract: The piezoelectric actuator includes a piezoelectric element (2) including a sheet of piezoelectric ceramic and electrodes formed at least part of the surface of the sheet of piezoelectric ceramic, and a holding member (4) holding the piezoelectric element (2); The piezoelectric at least one of the requirements (a) to (e) described below; (a) The bulk density shall be equal to or smaller than 5 g/cm3, and the Young's modulus Y11E calculated according to a resonance-antiresonance method shall be equal to or larger than 90 GPa; (b) The coefficient of thermal conductivity shall be equal to or larger than 2 Wm?1K?1; (c) The coefficient of thermal expansion shall be equal to or larger than 3.0 ppm/° C. over a temperature range from ?30° C. to 160° C.; (d) The pyroelectric coefficient shall be equal to or smaller than 400 ?Cm?2K?1 over the temperature range from ?30° C. to 160° C.

Abstract: A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1-x)(Zr(1-s)Tis)O3(0<s<1) or lead-zirconate-titanate-based oxide expressed as (Pb(1-x-y)Ay)(Zr(1-s-t)TisBt)O3(0<s<1, 0<t<1-s) where A is a substitutive metal ion in an A-site in the perovskite crystalline structure and B is a substitutive metal ion in a B-site in the perovskite crystalline structure. The value of x, which indicates a deficiency in Pb content in each composition, is more than 0 but not more than 0.15.

Abstract: There is disclosed a piezoelectric element having, on a substrate, a piezoelectric body and a pair of electrodes which come in contact with the piezoelectric body, wherein the piezoelectric body consists of a perovskite type oxide represented by the following formula (1): (Bi,Ba)(M,Ti)O3 ??(1) in which M is an atom of one element selected from the group consisting of Mn, Cr, Cu, Sc, In, Ga, Yb, Al, Mg, Zn, Co, Zr, Sn, Nb, Ta, and W, or a combination of the atoms of the plurality of elements.

Abstract: An ultrasonic actuator including: a vibration member, which comprises a plurality of piezoelectric displacement sections each being expanded and contracted by electric signals, and a connection section to connect the plurality of piezoelectric displacement sections, wherein the vibration member is vibrated by resonance of the plurality of piezoelectric displacement sections; and a movement member which generates relative movement to the vibration member by being pressed and contacted with the vibration member, wherein the plurality of piezoelectric displacement sections and the connection section are formed in one body with one and the same material.

Abstract: A piezoelectric/electrostrictive film device is provided including a thin ceramic substrate and a piezoelectric/electrostrictive operating portion disposed on the substrate. The piezoelectric/electrostrictive operating portion includes a lower electrode film, a piezoelectric/electrostrictive film including a large number of crystal particles having a piezoelectric/electrostrictive composition, and an upper electrode film successively laminated on the substrate. The piezoelectric/electrostrictive composition excludes lead and contains one or more alkali metal elements selected from the group consisting of lithium, potassium, and sodium, and one or more metal elements selected from the group consisting of niobium, tantalum, antimony, and silver. Circle equivalent diameters of at least 90% of the crystal particles in the piezoelectric/electrostrictive film are in a range of 0.3 to 50 ?m.

Abstract: An ultrasound probe comprising a transmitting piezoelectric layer, an electrode layer and a receiving piezoelectric layer laminated in that order, the ultrasound probe transmitting and receiving an ultrasound, wherein a polarization treatment on the receiving piezoelectric layer is carried out by providing a peelable dielectric layer on the receiving piezoelectric layer.

Abstract: A thin-film piezoelectric element has a substrate, a lower electrode, a piezoelectric portion, and an upper electrode that are sequentially formed on the substrate. The piezoelectric portion has a dielectric thin film that has an alkali niobium oxide-based perovskite structure expressed by general formula (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0?z<1, x+y+z=1), and a high voltage-withstand dielectric that has a dielectric strength voltage greater than that of the dielectric thin film.

Abstract: A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

Abstract: A piezoelectric/electrostrictive ceramic composition includes a Pb(Mg1/3Nb2/3)O3—PbTiO3—PbZrO3 ternary solid solution system composition as the major component, and further contains 0.05 to 3.0 mass % of Ni (in terms of NiO) and 0.01 to 1.0 mass % of Ag (in terms of AgO). The piezoelectric/electrostrictive ceramic composition can be used to form a piezoelectric/electrostrictive portion having excellent mechanical strength, and excellent piezoelectric/electrostrictive characteristics as well with seldom dielectric breakdown even under an application of a high electric field, at a relatively low firing temperature.

Abstract: A piezoelectric device including: a substrate; a lower electrode formed over the substrate; a piezoelectric layer formed over the lower electrode and including lead zirconate titanate; and an upper electrode formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.

Abstract: In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

Abstract: A piezoelectric device includes a piezoelectric member and a pair of electrodes, and for piezoelectric constants d33 and d31 of the piezoelectric member, the following relational expression (I) is established: 0.1?|d33/d31|?1.8.

Abstract: A piezoelectric/electrostrictive porcelain composition capable of being manufactured at a comparatively low firing temperature is provided, as well as a piezoelectric/electrostrictive ceramic or a piezoelectric/electrostrictive portion which is dense and superior in crystallinity and which has superior piezoelectric/electrostrictive characteristics and durability even under high temperature and high humidity conditions. The piezoelectric/electrostrictive porcelain composition includes a piezoelectric/electrostrictive component containing lead titanate zirconate, and 0.5 to 5% by mass of glass component containing 8% by mass or less of silicic acid.

Abstract: A piezoelectric thin-film element formed with a niobate lithium potassium sodium thin-film having a well-developed Perovskite structure and having an excellent piezoelectric characteristic. The piezoelectric thin-film 4 is a dielectric thin-film composed of a alkaline-niobic oxide represented by (Nax1Ky1Liz1) NbO3 (0<x1<1, 0<y1<1, 0?z1<1, x1+y1+z1=1) and having a Perovskite structure, and the base dielectric thin film 6 composed of a alkaline-niobic oxide represented by (Nax2Ky2Liz2) NbO3 (0<x2<1, 0<y2<1, 0?z2<1, x2+y2+z2=1) and having a Perovskite structure is provided between the lower electrode 3 and the piezoelectric thin-film 4.

Abstract: A piezoelectric actuator includes a first ceramic sheet having individual inner-electrodes formed thereon, a second ceramic sheet having a common inner-electrode formed thereon, a third ceramic sheet having individual surface-electrodes formed thereon, and a fourth ceramic sheet having a plurality of connection electrodes connecting the individual surface-electrodes and the individual inner-electrodes respectively. The connection electrodes have first portions, second portions and third portions respectively, the first portions facing the individual surface-electrodes and arranged at a pitch in a row in a row-direction, the second portions facing the individual inner-electrodes and being arranged in the row-direction to be shifted with respect to the first portions by half the pitch respectively; and the third portions connecting the first portions and the second portions respectively.

Abstract: A dielectric element having a dielectric layer provided between an upper electrode layer and a lower electrode layer, wherein the dielectric layer has a first dielectric layer and a second dielectric layer mutually different in composition, and composition of at least one component of the first dielectric layer changes as to a thickness direction of the first dielectric layer in proximity to a boundary between the first dielectric layer and the second dielectric layer.

Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

Abstract: A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, and a piezoelectric film formed above the buffer layer, wherein the buffer layer is formed of Pb ((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0?x?1, and y is in a range of 0.05?y?0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.

Abstract: A piezoelectric element includes a base substrate, a buffer layer formed above the base substrate, a piezoelectric film formed above the buffer layer, and a barrier layer formed above the piezoelectric film, wherein the buffer layer and the barrier layer are formed of Pb((Zr1-xTix)1-yNby)O3 of a perovskite type, where x is in a range of 0?x?1, and y is in a range of 0.05?y?0.3, and the piezoelectric film is formed of a relaxor material of a perovskite type.

Abstract: A piezoelectric material is expressed by a general formula (1) as follows: (Bi1?xBax)(Fe1?xTix)O3 . . . (1), where x is greater than 0, but smaller than 1(0<x<1).

Abstract: A process for producing a piezoelectric device constituted by a first electrode, at least one second electrode, and a piezoelectric film sandwiched between the first electrode and the at least one second electrode so that an electric field can be applied to the piezoelectric film. First, a seed layer of a material containing at least one element is formed on a substrate, and then the first electrode is formed on the seed layer. Next, the at least one element is diffused through the first electrode so that the at least one element precipitates on a surface of the first electrode on the opposite side to the seed layer, and then the piezoelectric film is formed on the first electrode.

Abstract: In piezoelectric thin films constituting crystalline dielectric thin film elements used for a piezoelectric actuator of a liquid discharge head, stress is generated in the crystallization step by heating due to the lattice misfit. Given this fact, by interposing between a substrate and intermediate layer which has a twin structure that absorbs the stress, film peeling and deterioration of the piezoelectric properties of the piezoelectric thin films are prevented. The intermediate layer is of a multi-layer structure which has a first intermediate layer comprising a twin structure thin film and a second intermediate layer which is the lower electrode, and because the substrate also serves as a lower electrode, the intermediate layer has a single layer structure comprising a twin structure thin film.

Abstract: A piezoelectric actuator comprising an optimum layer structure when (100) orientation strontium ruthenate is used as a bottom electrode is provided. This piezoelectric actuator comprises a diaphragm 30 that is constituted by (100) orientation yttria-stabilized zirconia, CeO2, or ZrO2, that is grown epitaxially on a (100) orientation Si substrate 20, a buffer layer 41 formed on the diaphragm and constituted by (001) orientation REBa2Cu3Ox, a bottom electrode 42 formed on the buffer layer and constituted by (100) orientation strontium ruthenate, a piezoelectric layer 43 formed on the bottom electrode and constituted by (100) orientation PZT, and a top electrode 44 formed on the piezoelectric layer.

Abstract: Provided is a piezoelectric ceramic composition capable of being sintered at low temperatures and in a low-oxygen reductive atmosphere and capable of attaining a sufficient displacement even at high voltages of 1 kV/mm or more. The piezoelectric ceramic composition includes: a composite oxide, as a main constituent thereof, represented by the following composition formula; Cu and/or Ag, each as a first additive, Cu being included in a content ?, in terms of Cu2O, falling within a range 0<??0.5% by mass and Ag being included in a content ?, in terms of Ag2O, falling within a range 0<??0.4% by mass, in relation to the main constituent; wherein: composition formula: Pba[(Zn1/3Nb2/3)xTiyZrz]O3, where 0.96?a?1.03, 0.005?x<0.05, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1.

Abstract: A laminated piezoelectric element capable of being sintered at low temperatures and high in piezoelectric properties is provided. The laminated piezoelectric element comprises a plurality of piezoelectric layers each comprising a composite oxide as a main constituent thereof and a plurality of internal electrode layers formed between the piezoelectric layers and containing Ag, wherein the piezoelectric layers are each comprised of a sintered body comprising the composite oxide, as a main constituent thereof, represented by (Pba-bMb)[(Zn1/3Nb2/3)xTiyZrz]O3 with the proviso that 0.96?a?1.03, 0?b?0.1, 0.05?x?0.15, 0.25?y?0.5, 0.35?z?0.6, x+y+z=1, and M represents at least one selected from Sr, Ca and Ba, and Ag in a content of 1.0% by weight or less (not inclusive of 0) in terms of Ag2O in relation to the main constituent.

Abstract: A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

Abstract: There is disclosed a piezoelectric/electrostrictive device which exhibits an excellent piezoelectric characteristic and which has an only small dependence on a temperature so that the piezoelectric characteristic does not easily change with the temperature. A piezoelectric/electrostrictive device includes a piezoelectric/electrostrictive portion made of a piezoelectric ceramic, and electrodes electrically connected to the piezoelectric/electrostrictive portion. The piezoelectric ceramic can reversibly transit to a tetragonal phase and an orthorhombic phase at a phase transition point as a boundary, and the piezoelectric/electrostrictive portion is formed by a polarization treatment performed on conditions that a treatment temperature ranges from a temperature which exceeds the phase transition point of the piezoelectric ceramic to a temperature which is 50° C. higher than the temperature.

Abstract: A piezoelectric ceramic and a piezoelectric device capable of being fired at a low temperature and improving piezoelectric properties are provided. The piezoelectric ceramic and the piezoelectric device includes Pba[(Znb/3Nb2/3)xTiyZrz]O3 (where 0.94?a?1.02, 1<b?3, x+y+z=1, 0.05?x<0.125, 0.275<y?0.5, 0.375<z?0.6) or (Pbe·fMef)[(Zng/3Nb2/3)uTivZrw]O3 (where 0.96?e?1.03, 0.01?f?0.1, 1<g?3, u+v+w=1, 0.05?u<0.125, 0.275<v?0.5, 0.375<w?0.6, and Me indicates Sr, Ba or Ca). When an excessive amount of Zn is included, the firing temperature can be lower, and the piezoelectric properties can be improved.

Abstract: In a piezoelectric thin film device of the present invention, the degree of flexibility is enhanced in selection of a piezoelectric material constituting a piezoelectric thin film and the crystal orientation in the piezoelectric thin film. A piezoelectric thin film filter, including four film bulk acoustic resonators, has a configuration where a filter section for providing a filter function of the piezoelectric thin film filter is bonded with a flat base substrate mechanically supporting the filter section via an adhesive layer. In manufacturing of the piezoelectric thin film filter, a piezoelectric thin film is obtained by performing removal processing on a piezoelectric substrate, but the piezoelectric thin film obtained by removal processing cannot independently stand up under its own weight. For this reason, a prescribed member including the piezoelectric substrate is previously bonded to the base substrate as a support prior to the removal processing.

Abstract: A method of forming a piezoelectric actuator of an inkjet head formed on a vibrating plate to provide a driving power for ejecting ink to each of pressure chambers is provided. The method includes forming a lower electrode on a vibrating plate, forming a piezoelectric layer on the lower electrode to be located above each of pressure chambers, forming a protecting layer covering the lower electrode and the piezoelectric layer, exposing an upper surface of the piezoelectric layer by decreasing a thickness of the protecting layer and the piezoelectric layer, forming an upper electrode on the upper surface of the piezoelectric layer, removing the protecting layer. According to the present invention, since the piezoelectric layer having a flat upper surface is formed in uniform figure, area and thickness of the upper electrode formed thereon is uniformly controlled.

Abstract: A method and apparatus attains high voltage gain by using a composite structure of an elastic section of piezoelectric layers bonded between magnetic and electric sections of magnetostrictive layers, with a harmonic magnetic field being applied along the layers at a mechanical resonance frequency of the composite structure, through coils around the laminate carrying current, such as to produce a continuity of both magnetic and electric flux lines, and achieving a high voltage output.

Abstract: A method of producing at least one thick film element, including depositing a material on a surface of at least one first substrate to form at least one thick film element structure having a thickness of approximately greater than 10 ?m to 100 ?m. Then, then the at least one thick film element structure is bonded to a second substrate, and the at least one first substrate is removed from the at least one thick film element structure using a lift-off process employing radiation energy. The lift-off process including emitting, from a radiation source, a radiation beam through the first substrate to an attachment interface formed between the first substrate and the at least one thick film element structure at the first surface of the first substrate. The first substrate being substantially transparent at the wavelength of the radiation beam, permitting the radiation beam to generate sufficient energy at the interface to break the attachment.

Abstract: A ferroelectric thin film element comprises a substrate and an epitaxial ferroelectric thin film provided on the substrate. The thin film satisfies z/z0>1.003 and 0.997?x/x0?1.003, where a crystal face of said thin film parallel to a crystal face of a surface of the substrate is taken as a Z crystal face, a face spacing of the Z crystal face is taken as z, a face spacing of the Z crystal face of a material constituting the thin film in a bulk state is taken as z0, a crystal face of the thin film perpendicular to the Z crystal face is taken as an X crystal face, a face spacing of the X crystal face is taken as x and a face spacing of the X crystal face of the material constituting the thin film in a bulk state is taken as x0.

Abstract: A method for fabricating a piezoelectric macro-fiber composite actuator comprises making a piezoelectric fiber sheet by providing a plurality of wafers of piezoelectric material, bonding the wafers together with an adhesive material to form a stack of alternating layers of piezoelectric material and adhesive material, and cutting through the stack in a direction substantially parallel to the thickness of the stack and across the alternating layers of piezoelectric material and adhesive material to provide at least one piezoelectric fiber sheet having two sides comprising a plurality of piezoelectric fibers in juxtaposition to the adhesive material. The method further comprises bonding two electrically conductive films to the two sides of the piezoelectric fiber sheet. At least one conductive film has first and second conductive patterns formed thereon which are electrically isolated from one another and in electrical contact with the piezoelectric fiber sheet.

Abstract: The invention provides a defect inspecting apparatus and a defect detecting method for specifying a position of a defect before polarization when the defect is included in a coaxial flexible piezoelectric member. Further, when a piezoelectric tube is moved in polarization, a friction force is produced between the coaxial flexible piezoelectric member and a block-like conductor and therefore, a large force is needed in moving the piezoelectric tube. The invention provides a polarizing apparatus and a polarizing method capable of moving the piezoelectric tube even by a small force. There are provided a defect detecting apparatus of a coaxial flexible piezoelectric member having a constitution of applying a direct current to a coaxial flexible piezoelectric member while moving a piezoelectric tube arranged at a hole of inspecting electrode means and a marking apparatus for marking a defect portion.

Abstract: A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1?bB1?aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05?a?0.3; and b satisfies 0.025?b?0.15.

Abstract: A method for making a piezoelectric actuator comprises coating at least one of a first surface and a second surface of a piezoelectric element with a polyimide adhesive. The piezoelectric element is then heated to dry the adhesive. Afterwards, the piezoelectric element is inserted between a first metallic layer and a second metallic layer to form an assembly. The assembly is placed in a press. While the assembly is in the press, the polyimide adhesive is cured at a curing temperature which does not depole the piezoelectric element, thereby bonding the piezoelectric element between the first metallic layer and the second metallic layer.

Abstract: A piezoelectric/electrostrictive ceramic composition containing, as a major component, a Pb(Mg1/3Nb2/3)O3—PbTiO3—PbZrO3 ternary solid solution system composition and further containing Ni in an amount of 0.05 to 3.0% by mass in terms of NiO and Si in an amount of 0.003 to 0.01% by mass in terms of SiO2. The piezoelectric/electrostrictive ceramic composition can constitute a piezoelectric/electrostrictive body or a piezoelectric/electrostrictive portion both having an excellent piezoelectric/electrostrictive property and durability even under high-temperature and highly humid conditions.

Abstract: A piezoelectric film is provided that is represented by the following general formula: Pb1?b[((X1/3Nb2/3)1?cB?c)1?aYa]O3 wherein X is at least one of Mg, Zn and Ni; B? is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05?a<0.30; b satisfies 0.025?b?0.15; when X is Mg, c satisfies 0.25?c?0.35; when X is Ni, c satisfies 0.30?c?0.40; and when X is Zn, c satisfies 0.05?c?0.15.

Abstract: A multilayered piezoelectric/electrostrictive device is provided, including a substrate, a plurality of piezoelectric/electrostrictive portions, and a plurality of electrodes. The piezoelectric/electrostrictive portions and the electrodes are alternately layered on the substrate, and the piezoelectric/electrostrictive portion positioned in the lowermost layer is anchored to the substrate directly or through an electrode. The ratio (?=A/B) of the average particle size (A) (?m) of the piezoelectric/electrostrictive ceramic of the piezoelectric/electrostrictive portion to the thickness (B) (?m) of the piezoelectric/electrostrictive portion satisfies the relationship expressed by “0.02???0.6” in each of the piezoelectric/electrostrictive portions.

Abstract: A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.

Abstract: In a disclosed method, a piezoelectric element 1 has an asymmetrical hysteresis characteristic of polarization-electric field different in absolute values between a coercive field of positive electric side and a coercive field of negative electric field side, and is polarized in the film thickness direction of the piezoelectric element 1 and in a direction of smaller absolute value of the coercive field, and as a position control voltage Q1 for position control by ditorting the piezoelectric element 1 in a direction orthogonal to the film thickness direction of the piezoelectric element 1, a voltage equivalent to an electric field of 0.4 or less of the coercive field value is applied in the film thickness direction of the piezoelectric element 1 in a direction of larger absolute value of the coercive field.

Abstract: Apparatus for non-destructively testing material to enable detection of any damage sites, comprising means for generating localized heating at any damage site in the material, and means for imaging the material to enable detection of any localized heating at the damage site.

Abstract: The invention relates to interfaces acoutics wave components made of lithium tantalate. Two substrate make up the filter have the same cut and the same crystal orientation, the invention gives the best cut angles in particular for optimizing the electromechanical coupling coefficient that determines the final performance characteristics of the component produced. Curves giving the variations of the coupling coefficient an the attenuation as a function of the cut angles and of the direction of propagation are provided. The values of the main acoustic characteristics of the component for these optimum cut angles are also given. The application of this type of device are, on the on hand, uses as a passive component such a resonator or a filter or a delay line, or as an integrated device, either in a measurement chain or in any array of devices operating according to the principle of recognition of the device by a phase code.

Abstract: A method of manufacturing a piezoelectric element structure having a supporting substrate and a piezoelectric film supported on the supporting substrate. A first layer, and a second layer having zirconium, each provided with a perovskite structure, are formed in that order on the supporting substrate. The two layers are formed to be in contact with each other or laminated through an intermediate layer. The temperature is set to 500° C. or more at the time of formation of the layers, and cooling is subsequently provided from the formation temperature at least to 450° C. with a cooling speed of 30° C./min or more.

Abstract: An angular rate sensor includes a quadratic prism-like oscillator 1a formed by laminating a substrate 2 and a piezoelectric material 3, the piezoelectric material 3 is made of piezoelectric ceramics including PZT (Lead Zirconate Titanate) as a main component, and the substrate 2 is made of a material other than PZT having physical property values equivalent to or less than PZT, which is a main component of the piezoelectric ceramics, with respect to Young's modulus, thermal expansion coefficient, and the like.