With Positive Or Negative Ion Acceleration Patents (Class 313/359.1)
  • Patent number: 6645301
    Abstract: An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the ion current.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: November 11, 2003
    Assignee: Saintech Pty Limited
    Inventor: Wayne G Sainty
  • Patent number: 6635998
    Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.
    Type: Grant
    Filed: October 2, 2002
    Date of Patent: October 21, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Shigeru Tanaka, Isao Hashimoto
  • Patent number: 6633114
    Abstract: A mass spectrometer includes an ion source which generates a beam including positive ions, a sampling interface which extracts a portion of the beam from the ion source to form a sample beam that travels along a path and has an excess of positive ions over at least part of the path, thereby causing space charge effects to occur in the sample beam due to the excess of positive ions in the sample beam, an electron source which adds electrons to the sample beam to reduce space charge repulsion between the positive ions in the sample beam, thereby reducing the space charge effects in the sample beam and producing a sample beam having reduced space charge effects, and a mass analyzer which analyzes the sample beam having reduced space charge effects.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: October 14, 2003
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Robert S. Houk, Narong Praphairaksit
  • Publication number: 20030184205
    Abstract: A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.
    Type: Application
    Filed: April 21, 2003
    Publication date: October 2, 2003
    Inventor: Wayne L. Johnson
  • Patent number: 6627881
    Abstract: For analyzing micro-organisms and other high-molecular weight species, a sample of the substance to be analyzed is prepared, placed in a pyrolyzer where it is pyrolyzed with a selected temperature program to provide pyrolyzed product of a high-dalton mass range. The product is ionized using metastable atoms which results in efficient ionization with little fragmentation. The metastable atoms are generated using a generator that provides a beam of metastable atoms which is basically free from ions. The ionized product is then analyzed using a high acquisition rate mass analyzer, such as a time-of-flight (TOF) analyzer.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: September 30, 2003
    Assignees: Dephy Technolgies Inc., Université de Montréal
    Inventors: Michel J. Bertrand, Olivier Peraldi
  • Patent number: 6617775
    Abstract: Electrons are arranged so they circulate along a spiral path in a vacuum. The path has a hollow symmetrical shape which is defined by a surface of a toroid. The shape is controllable by a magnetic field and the electrons can be contained within the shape. A containing force can be created by external electromagnetic fields, ions within the vacuum, or by interactions between the orbiting electrons themselves. The contained electrons store energy for later retrieval.
    Type: Grant
    Filed: October 31, 2000
    Date of Patent: September 9, 2003
    Assignee: Electron Power Systems, Inc.
    Inventors: D. Clint Seward, III, Chiping Chen, Richard J. Temkin
  • Patent number: 6614037
    Abstract: Disclosed is an electron beam irradiating apparatus including an electron beam source; an accelerating unit for accelerating electrons emitted from the electron beam source; a deflecting unit for deflecting a highly energized electron beam generated by the accelerating unit in a scanning direction; a vacuum vessel accommodating the electron beam source, the accelerating unit, and the deflecting unit in a vacuum environment; a window foil for ejecting the electron beam from the vacuum environment into a gas environment; a crosspiece for adhering to and supporting the window foil; and a cooling block for shielding the crosspiece from the electron beam in areas that the electron beam intersects the crosspiece.
    Type: Grant
    Filed: February 6, 2001
    Date of Patent: September 2, 2003
    Assignee: Ebara Corporation
    Inventor: Yoshihiko Naito
  • Patent number: 6611087
    Abstract: A system for joining at least two beams of charged particles that includes directing a first beam along a first axis into a field. A second beam is directed along a second axis into the field. The first and second beams are turned, by interaction between the field and the first and second beams, into a third beam directed along a third axis.
    Type: Grant
    Filed: August 6, 2002
    Date of Patent: August 26, 2003
    Assignee: Coincident Beams Licensing Corporation
    Inventor: Michael Mauck
  • Patent number: 6608431
    Abstract: In accordance with one embodiment of the present invention, the ion-beam apparatus takes the form of an end-Hall ion source in which the detachable anode module incorporates the outer pole piece and includes an enclosure around the anode that both minimizes the loss of working gas and confines sputter contamination to the interior of this enclosure. This detachable anode module is substantially smaller than the entire end-Hall ion source, weighs substantially less, and can be duplicated for significantly less cost than the duplication of the entire ion source. In general, the components of the magnetic circuit determine the overall size, weight, and much of the cost of a gridless ion source. The reduced size, weight, and cost of the detachable anode module compared to the entire ion source is due to most of the magnetic circuit being excluded from the detachable module.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: August 19, 2003
    Assignee: Kaufman & Robinson, Inc.
    Inventor: Harold R. Kaufman
  • Publication number: 20030127433
    Abstract: A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152′) that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 10, 2003
    Inventors: Murray D. Sirkis, Eric Strang, Yu Wang Bibby, John E. Cronin
  • Patent number: 6583544
    Abstract: An ion source (10) for an ion implanter is provided, comprising: (i) an ionization chamber (14) defined at least partially by chamber walls (12), and having an inlet (45) into which a sputtering gas may be injected and an aperture (18) through which an ion beam (B) may be extracted; (ii) an ionizing electron source (44) for ionizing the sputtering gas to form a sputtering plasma; and (iii) a sputterable repeller (100). The sputterable repeller both (a) repels electrons emitted by the electron source, and (b) provides a source of sputtered material that can be ionized by the electron source. The sputterable repeller (100) comprises a slug (108) of sputterable material, and further comprises mounting structure (102, 104) for removably mounting the slug within the ionization chamber (14), so that the slug is made removably detachable from the mounting structure.
    Type: Grant
    Filed: August 7, 2000
    Date of Patent: June 24, 2003
    Assignee: Axcelis Technologies, Inc.
    Inventors: Thomas N. Horsky, Tommy D. Hollingsworth
  • Patent number: 6555831
    Abstract: An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18.
    Type: Grant
    Filed: April 28, 2000
    Date of Patent: April 29, 2003
    Assignee: Nissin Electric Co., Ltd.
    Inventors: Masashi Konishi, Shuichi Maeno, Yasunori Ando
  • Patent number: 6548946
    Abstract: An electron beam generator having circuit interconnections between individual components that are less prone to the adverse effects of thermal cycling. The generator includes a conductor rod within a guide tube, a center conductor secured to one end of the rod, and an outer conductor secured to the adjacent end of the guide tube. An opposite end of the center conductor has an integrally-formed flange extending radially therefrom. A first tower is secured and electrically connected to the flange, while a second and adjacent tower is electrically connected to the outer conductor. A filament is mounted to and between the first and second towers. A forward leg of the filament circuit comprises the conductor rod, the center conductor, the flange and the first tower, and the return leg of the filament circuit comprises the second tower and the guide tube interconnected by the outer conductor.
    Type: Grant
    Filed: November 2, 2000
    Date of Patent: April 15, 2003
    Assignee: General Electric Company
    Inventor: Thomas Orrin Zengel
  • Patent number: 6522056
    Abstract: A system for joining at least two beams of charged particles that includes directing a first beam along a first axis into a field. A second beam is directed along a second axis into the field. The first and second beams are turned, by interaction between the field and the first and second beams, into a third beam directed along a third axis.
    Type: Grant
    Filed: June 30, 2000
    Date of Patent: February 18, 2003
    Assignee: Coincident Beams Licensing Corporation
    Inventor: Michael Mauck
  • Patent number: 6518693
    Abstract: A method and apparatus for using a magnetic field generated by a thruster magnet to control electron current emitted by a cathode assembly. The magnetic field reduces leakage current drawn by an inactive anode by producing a magnetic field in proximity to the inactive anode. This magnetic field increases the impedance to the anode for electron current which is produced in the cathode assembly. This reduction in leakage current reduces the amount of electron current produced by the cathode assembly. This control system can be implemented by connecting all thruster anodes and cathodes in parallel to an anode power supply.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: February 11, 2003
    Assignee: Aerojet-General Corporation
    Inventors: Steven D. Meyer, David Q. King
  • Patent number: 6515426
    Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source.
    Type: Grant
    Filed: December 13, 1999
    Date of Patent: February 4, 2003
    Assignee: Hitachi, Ltd.
    Inventors: Shigeru Tanaka, Isao Hashimoto
  • Patent number: 6515409
    Abstract: An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).
    Type: Grant
    Filed: December 12, 2000
    Date of Patent: February 4, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masato Muraki, Yoshikiyo Yui
  • Patent number: 6515408
    Abstract: A source of thermionic electrons is provided inside the flight tube of a magnet, especially an analysing magnet, and extends along the beam flight path. This allows space charge to be neutralised along the beam's axis in spite of severely restricted electron mobility in this direction owing to the presence of substantially transverse magnetic field. Thermionically emitted electrons may contribute directly to the neutralisation of space charge in positive ion beams, or, in the case of negative ion beams, indirectly by ionizing residual or deliberately introduced neutral gas atoms or molecules. Examples are described and claimed in which the source is arranged outside the nominal beam envelope in the flight tube, but linked to the beam by magnetic flux generated in the flight tube. This reduces erosion of the source by the beam and so reduces beam contamination. In these examples, an important feature is the provision of electron repellers to reflect electrons back and forth across the beam.
    Type: Grant
    Filed: February 15, 2001
    Date of Patent: February 4, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Jonathan Gerald England, Andrew Holmes, David Armour, Jaap Van Den Berg, Stephen Moffatt
  • Patent number: 6504294
    Abstract: A unique Hall-Current ion source apparatus is used for direct ion beam deposition of DLC coatings with hardness values greater than 10 GPa and at deposition rates greater than 10 Å per second. This ion source has a unique fluid-cooled anode with a shadowed gap through which ion sources feed gases are introduced while depositing gases are injected into the plasma beam. The shadowed gap provides a well maintained, electrically active area at the anode surface which stays relatively free of non-conductive deposits. The anode discharge region is insulatively sealed to prevent discharges from migrating into the interior of the ion source. A method is described in which a substrate is disposed within a vacuum chamber, coated with a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively.
    Type: Grant
    Filed: July 11, 2000
    Date of Patent: January 7, 2003
    Assignee: Morgan Chemical Products, Inc.
    Inventors: Leonard Joseph Mahoney, David Ward Brown, Rudolph Hugo Petrmichl
  • Patent number: 6483118
    Abstract: The present invention provides a positron source essentially consisting of a carbon member having 18F bound onto the surface thereof, a method of a preparing the same, and an automated system for supplying the same. In the present invention, the positron source is prepared by irradiating a solution 35 containing both H218O and a small amount of natural fluorine ions with a beam of charged particles to generate 18F, and then passing an electric current through the solution 35 using a carbon member 40 as an anode to cause to bind the generated 18F onto the surface of the carbon member 40.
    Type: Grant
    Filed: July 19, 2001
    Date of Patent: November 19, 2002
    Assignee: Riken
    Inventors: Ichiro Fujiwara, Yoshiko Ito, Ren Iwata, Toshio Hyodo, Yasushige Yano, Akira Goto, Yuji Ikegami, Yoshio Nomiya
  • Patent number: 6445146
    Abstract: A method is disclosed for minimising the diameter of the magnet poles of a cyclotron system for production of radioactive tracers. The method selects an operation mode having vz defined below the critical resonance value of vz=½ and chooses a valley technique having shallow valleys by selecting a first magnet pole parameter defining a valley gap accepting a narrow spaced RF electrode system and size facilitating a vacuum conductance necessary for obtaining a low enough pressure. The method then defines a second magnet pole parameter by setting a sector gap size. The magnetic azimuthal field shape is transformed from being “square-wave”-shaped to becoming approximately sinusoidal by increasing the magnetising field. Then an average magnetic field is calculated from the increased magnetising field and the first and second magnet pole parameter. A pole diameter can then be established to obtain a most compact design of the electromagnet for a cyclotron system.
    Type: Grant
    Filed: November 2, 1999
    Date of Patent: September 3, 2002
    Assignee: Gems Pet Systems AB
    Inventors: Jan Olof Bergström, Stig Lindbäck
  • Patent number: 6441569
    Abstract: A particle accelerator for inducing contained particle collisions. The particle accelerator includes two hollow dees of electrically conductive material which are separated and electrically insulated from each other. The dees are located between the poles of a strong magnet which generates a magnetic field through top and bottom sides of the dees. In addition, the dees are connected to an oscillator for providing an alternating voltage between the dees. The dees are located within a chamber containing a gas and/or vapor provided at a measurable pressure. Ions are accelerated in essentially spiral paths within the dees, and follow paths which may be both concentric and non-concentric with the dees whereby collisions are produced between accelerated ions and gas or vapor atoms contained within the chamber, as well as between pairs of accelerated ions following different paths.
    Type: Grant
    Filed: December 9, 1999
    Date of Patent: August 27, 2002
    Inventor: Edward F. Janzow
  • Patent number: 6433494
    Abstract: An improved device utilizing an inductive undulative EH-accelerator is proposed for acceleration and cooling of plasma fluxes, and beams of charged particles, and separate charged particles; and for forming of neutral molecular beams, and neutron beams (inductive undulative EH-accelerator) is proposed. The device consists of an electromagnetic undulation system, whose driving system for electromagnets, is made in the form of a radio frequency (RF) oscillator operating in the frequency range from about 100 KHz to 10 GHz; which is connected with coils of the undulatve system of electromagnets, and a source of accelerated particles, which is provided in the form of source of plasma or neutral molecular beams, or positive or negative ions, or charged particle beams, or separate charged particles.
    Type: Grant
    Filed: April 18, 2000
    Date of Patent: August 13, 2002
    Inventors: Victor V. Kulish, Peter B. Kosel, Alexandra C. Melnyk, Nestor Kolcio
  • Patent number: 6433349
    Abstract: A charged-particle beam irradiation system for an affected part in which while a charged-particle beam ejected from an accelerator is scanned by an electromagnet onto the affected part, each layer of the affected part resulting from division of the affected part into a plurality of layers in a direction of progression of said charged-particle beam is irradiated with the charged-particle beam. The system includes a changer for changing an energy of said charged-particle beam in accordance with a layer of the plurality of layers to be irradiated with the charged-particle beam and an intensity controller for controlling an intensity of the charged-particle beam.
    Type: Grant
    Filed: May 8, 2001
    Date of Patent: August 13, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Akiyama, Kazuo Hiramoto, Koji Matsuda
  • Publication number: 20020092473
    Abstract: An ion source for use in ion assisted deposition of films, has a ionisation region, a gas supply, supplying ionisable gas to the ionisation region, a gas excitation system causing ionisation of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the current.
    Type: Application
    Filed: August 9, 2001
    Publication date: July 18, 2002
    Inventor: Wayne G. Sainty
  • Patent number: 6420821
    Abstract: A cathode for a magnetron having concave/convex portions on a surface of a cylindrical base metal with thermionic emitting materials being fixedly attached to concave portions from among the concave/convex portions. The convex portions of the concave/convex portions are arranged to be inclining. It is enabled to effectively protect thermionic emitting materials from inverse impulse of electrons or ions and from oscillation to thereby restrain consumption and omission of these thermionic emitting materials and to decrease higher harmonics of radiation.
    Type: Grant
    Filed: January 21, 2000
    Date of Patent: July 16, 2002
    Assignee: New Japan Radio Co., LTD
    Inventors: Kiyoshi Kishiki, Yukio Torikai, Toshihiko Yamashita, Hideyuki Obata
  • Patent number: 6404115
    Abstract: A charged particle emitting assembly comprises an emitter member (5) for emitting charged particles of one polarity. A tubular shield electrode (6) circumferentially surrounds the emitter member and is held in use at the same polarity as the charged particles. A tubular accelerating electrode (7) is positioned substantially coaxially with the shield electrode (6) and is held in use at the opposite polarity to the shield electrode. The arrangement is such that charged particles from the emitter member (5) initially spread laterally outwardly and then are focused into a beam which passes through the tubular accelerating electrode (7).
    Type: Grant
    Filed: June 13, 2000
    Date of Patent: June 11, 2002
    Assignee: The Welding Institute
    Inventor: Allan Sanderson
  • Patent number: 6380666
    Abstract: A time-of-flight spectrometer comprises a quadrupole ion trap (10) as an ion source, a drift tube (11) defining a field-free drift space, an ion reflector (12) and an ion detector (13). The quadrupole ion trap (10) has two end-cap electrodes (22, 23) and a ring electrode (21). End-cap electrode (22) has a central hole (24) through which ions to be extracted can pass. High voltage power supplies (34, 35) and associated switching devices (32, 33) are provided to supply extraction voltages to the end-cap electrodes (22, 23). The extraction voltage supplied to end-cap electrode (22) has the opposite polarity to the extraction voltage supplied to the other end-cap electrode (23) being respectively negative and positive voltages for positive ion extraction and respectively positive and negative voltages for negative ion extraction. The magnitude of the extraction voltage supplied to electrode (23) is in the range from 0.5 to 0.8 that of the extraction voltage supplied to electrode (22).
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: April 30, 2002
    Assignee: Shimadzu Research Laboratory (Europe) Ltd.
    Inventor: Eizo Kawato
  • Patent number: 6376978
    Abstract: A radio frequency (RF) antenna for plasma ion sources is formed of a hollow metal conductor tube disposed within a glass tube. The hollow metal tubular conductor has an internal flow channel so that there will be no coolant leakage if the outer glass tube of the antenna breaks. A portion of the RF antenna is formed into a coil; the antenna is used for inductively coupling RF power to a plasma in an ion source chamber. The antenna is made by first inserting the metal tube inside the glass tube, and then forming the glass/metal composite tube into the desired coil shape.
    Type: Grant
    Filed: March 6, 2000
    Date of Patent: April 23, 2002
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Elie Benabou
  • Patent number: 6348757
    Abstract: The objective of the invention is a process for producing a rigidified structure, comprising at least one element with superconducting properties, and the means for rigidifying, this process comprising a stage of deposit by plasma spraying of a layer of material on a surface of said element.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: February 19, 2002
    Assignee: Centre National de la Recherche Scientifique
    Inventor: Jean Marini
  • Patent number: 6346768
    Abstract: A low energy ion gun for ion beam processing. The ion gun includes a plasma chamber having an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes at a second end thereof opposite the first end. The ion gun also has primary magnets arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device. The electrodes include multi-aperture grids arranged for connection to respective positive potential sources and positioned to contact the plasma in the plasma chamber. The apertures of the grids are aligned so that particles emerging from an aperture of a first one of the grids are accelerated through corresponding apertures of the other grids in the form of a beamlet. A plurality of beamlets forms a beam.
    Type: Grant
    Filed: June 7, 1999
    Date of Patent: February 12, 2002
    Assignee: Nordiko Limited
    Inventor: Gary Proudfoot
  • Publication number: 20020008455
    Abstract: An apparatus and method for thrusting plasma, utilizing a Hall thruster with segmented electrodes along the channel, which make the acceleration region as localized as possible. Also disclosed are methods of arranging the electrodes so as to minimize erosion and arcing. Also disclosed are methods of arranging the electrodes so as to produce a substantial reduction in plume divergence. The use of electrodes made of emissive material will reduce the radial potential drop within the channel, further decreasing the plume divergence. Also disclosed is a method of arranging and powering these electrodes so as to provide variable mode operation.
    Type: Application
    Filed: April 13, 2001
    Publication date: January 24, 2002
    Inventors: Nathaniel J. Fisch, Yevgeny Raitses
  • Patent number: 6337537
    Abstract: A vacuum diode with a high saturation current density and a rapid response time for the detection of electromagnetic radiation. This diode comprises a grid (6) in the shape of a cylinder and a photo-cathode (4) which extends along the axis (X) of the cylinder. The photo-cathode includes a part of the internal conductor of a coaxial cable (8), the external conductor and the electrically insulating material of the coaxial cable being removed opposite this part, and the grid is electrically connected to the external conductor of this coaxial cable, the internal and external conductors being coaxial. Application to the detection of visible, infra-red, ultra-violet and X radiation.
    Type: Grant
    Filed: October 19, 1999
    Date of Patent: January 8, 2002
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Jean-Luc Bourgade, Dominique Gontier
  • Patent number: 6335535
    Abstract: A method for implanting negative hydrogen ions includes the following steps. Plasma containing hydrogen is generated. Negative hydrogen ions are generated in the plasma. An electric field is formed between the plasma and a substrate. Negative hydrogen ions from the plasma is accelerated by using the electric field so as to implant negative hydrogen ions into a predetermined depth of a substrate.
    Type: Grant
    Filed: June 25, 1999
    Date of Patent: January 1, 2002
    Assignee: Nissin Electric Co., LTD
    Inventors: Koji Miyake, Tsukasa Hayashi, Hajime Kuwahara
  • Publication number: 20010033128
    Abstract: Incorporating the use of a permanent magnet within a GCIB apparatus to separate undesirable monomer ions from a gas cluster ion beam to facilitate improved processing of workpieces. In an alternate embodiment, the effect of the permanent magnet may be controlled by the use of an electrical coil. The above system eliminates problems related to power consumption and heat generation.
    Type: Application
    Filed: December 1, 2000
    Publication date: October 25, 2001
    Inventors: Richard P. Torti, Jerald P. Dykstra
  • Patent number: 6285133
    Abstract: Various embodiments of an ion implantation apparatus are provided. In one aspect, an apparatus for implanting a workpiece with ions is provided that includes a housing enclosing a first chamber. A source of accelerated ions is provided for directing a beam of ions through the first chamber toward the workpiece. A second chamber is provided for holding the workpiece along with a plurality of longitudinally spaced chambers that are defined by the housing and a plurality of longitudinally spaced bulkheads. Each of the bulkheads has an aperture enabling fluid communication between the plurality of longitudinally spaced chambers and the passage of the beam of ions. A source of gas is coupled to the second chamber. A pumping system is provided for evacuating the first chamber, the second chamber and the plurality of longitudinally spaced chambers. The pumping system and the plurality of longitudinally spaced chambers provide an increase in pressure between the first chamber and the second chamber.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: September 4, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Christopher H. Lansford, Jeremy S. Lansford
  • Patent number: 6278239
    Abstract: A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.
    Type: Grant
    Filed: June 10, 1998
    Date of Patent: August 21, 2001
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: George J. Caporaso, Stephen E. Sampayan, Hugh C. Kirbie
  • Patent number: 6265837
    Abstract: A charged-particle beam irradiation method and system are disclosed in which while a charged-particle beam ejected from an accelerator is scanned by an electromagnet, each layer resulting from the division of an affected part into a plurality of layers in the direction of progression of the charged-particle beam is irradiated with the charged-particle beam. The intensity of a charged-particle beam for irradiation of a first layer is made lower than the intensity of a charged-particle beam for irradiation of a second layer existing at a position deeper than the first layer in the beam progressing direction. A scanning speed in the first layer is changed between a portion of the first layer subjected to irradiation at the time of irradiation of the second layer and a portion of the first layer subjected to no irradiation at the time of irradiation of the second layer.
    Type: Grant
    Filed: March 9, 1999
    Date of Patent: July 24, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Akiyama, Kazuo Hiramoto, Koji Matsuda
  • Patent number: 6259102
    Abstract: The present invention pertains to steady-state Ion-Beam Sources with an Anode Layer provided by a quadrupole magnetic system formed by a pair of long conductive magnets having U-shape cross-sections and positioned symmetrically above and along a plane and the long anode of nonmagnetic material. The conductive magnets of the quadrupole magnetic system serve as cathodes having an invariable discharge gap with the anode surface faced to the poles of the magnetic system having an invariable magnetic gap defining the width of the generated Ion Beam. The operating configuration of the Ion-Beam Source also comprises a gas-distributing system providing a uniform gas distribution into the gas-discharge gap, an anode water-cooling system (the anode bar has special holes), and a cathode water-cooling system. The Ion-Beam Source may be designed in a long linear style with a quasi-closed and closed electron drift, and in a round style with a closed electron drift.
    Type: Grant
    Filed: May 20, 1999
    Date of Patent: July 10, 2001
    Inventor: Evgeny V. Shun'ko
  • Publication number: 20010004185
    Abstract: An element exposure field (EF) having a size falling within a range where aberration by an electron optical system is suppressed to a predetermined amount or less is divided into a plurality of partial fields (PF), and a pattern is drawn on a substrate with an electron beam on the basis of exposure information in which charged-particle beam dosages for the plurality of partial fields are set. Each partial field (PF) is continuously scanned and exposed with a corresponding dosage contained in the exposure information. Scan/exposure for each partial field (PF) is sequentially executed for all the partial fields (PF) in the element exposure field (EF).
    Type: Application
    Filed: December 12, 2000
    Publication date: June 21, 2001
    Inventors: Masato Muraki, Yoshikiyo Yui
  • Patent number: 6239541
    Abstract: RFQ electrodes for use as an acceleration tube of a high energy ion implanter, capable of accelerating an ion beam of large current without divergence are arranged, with respect to a low resonance frequency of substantially 33 MHz suitable for heavy ions such as B, P, and As, such that a radius R1 of a beam passage spacing surrounded by four RFQ electrodes is 5 mm to 9 mm, a curvature R2 in a direction perpendicular to an axis of a crest portion of repetitive crest and trough portions on surfaces of the electrodes in a beam propagation direction is 5 mm to 9 mm, and a height H from a peak of the crest portion to a bottom surface is set so that H/R1 is 4 to 6. When the height H of the electrodes is reduced, while shunt impedance is increased and power efficiency is improved, a cooling ability becomes insufficient due to the fact that a cross section of a coolant channel cannot be increased, and a problem is presented that oscillation of electrodes is likely to occur due to insufficient mechanical strength.
    Type: Grant
    Filed: November 24, 1998
    Date of Patent: May 29, 2001
    Assignee: Nissin Electric Co., Ltd.
    Inventor: Hiroshi Fujisawa