Plasma Generating Patents (Class 315/111.21)
-
Patent number: 7884551Abstract: The present invention pertains to RF (radio frequency) inductive coupling plasma (ICP) sources exciting and maintaining plasma within a closed and vacuum sealed discharge chamber filled with a gaseous medium at a controllable pressure in the range from 1 mTorr to atmospheric pressure. The inductively couple plasma source of the present invention includes a radio frequency source, a quasi-closed O-type solenoidal inductor comprised of two equal section U-shaped solenoid coil halves separated from one another to form two operating gaps between aligned spaced ends of the solenoid coil halves. Each of the U-shaped halves of the solenoid coil is sectioned to have an electrical midpoint connected to the radio frequency source and the distal outer ends of the solenoid coils, which correspond to the aforesaid aligned spaced ends of the quasi-closed solenoidal inductor, are connected to ground.Type: GrantFiled: February 19, 2009Date of Patent: February 8, 2011Assignee: Shunko, Inc.Inventor: Evgeny V. Shun'ko
-
Patent number: 7883601Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.Type: GrantFiled: January 19, 2007Date of Patent: February 8, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Ming Chang, Chi-Lun Lu
-
Publication number: 20110025210Abstract: Provided is a plasma apparatus using a cylinder head, which comprises a discharge device installed with an electrode exposed to the combustion chamber and installed in the cylinder head, an antenna installed to protrude from the cylinder head into the combustion chamber, a bulging portion bulging from the cylinder head to the combustion chamber so as to cover the antenna, made from insulator or dielectric, an electromagnetic wave transmission line installed in the cylinder head and with one end connected to the antenna and the other end, covered with insulator or dielectric, penetrating the cylinder head to extend to an outer wall of the cylinder head, and an electromagnetic wave generator for feeding electromagnetic waves to the electromagnetic wave transmission line.Type: ApplicationFiled: September 14, 2010Publication date: February 3, 2011Applicant: IMAGINEERING, INC.Inventor: Yuji Ikeda
-
Patent number: 7879179Abstract: A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.Type: GrantFiled: October 31, 2007Date of Patent: February 1, 2011Assignee: Tokyo Electron LimitedInventor: Hayashi Otsuki
-
Patent number: 7880392Abstract: Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.Type: GrantFiled: October 26, 2006Date of Patent: February 1, 2011Assignees: Nissin Electric Co., Ltd., EMD CorporationInventors: Kenji Kato, Hiroshige Deguchi, Hitoshi Yoneda, Kiyoshi Kubota, Akinori Ebe, Yuichi Setsuhara
-
Publication number: 20110018444Abstract: The invention concerns a new device based on very short pulsed discharges, generating plasmas balls and plumes over very long distances (up to several meters). These plasma balls are travelling in dielectric guide at the end of which there is generation of an apparent plasma plume like zone (which shape and intensity depend on the discharge repetition rate) wherein secondary mixture plasma can be produced close to a given surface by adding other gas fluxes in the main gas stream. The plasmas balls can be generated in gases at a repetition rate in the range from single shot to multi-kilohertz.Type: ApplicationFiled: October 16, 2008Publication date: January 27, 2011Inventors: Jean-Michel Pouvesle, Christophe Cachoncinlle, Raymond Viladrosa, Ahmed Khacef, Eric Robert, Sébastien Dozias
-
Publication number: 20110018443Abstract: A plasma generating apparatus includes a chamber, a slow wave antenna and an electromagnetic wave generator. The chamber has an accommodating space. The slow wave antenna has a central conductive tube passing through the accommodating space, and a dielectric tube arranged around the central tube. The electromagnetic wave generator is used for coupling electromagnetic wave into the slow wave antenna. An electromagnetic wave transmitted by the electromagnetic wave generator can pass through the slow wave antenna and radiate into the accommodating space.Type: ApplicationFiled: October 28, 2009Publication date: January 27, 2011Inventors: Chwung-Shan KOU, Yan-Ru Pan, Shin-Hua Lin, Teng-Wei Wang, Yi-Hsiang Chan, Jui-Yu Lin
-
Patent number: 7875867Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.Type: GrantFiled: December 3, 2008Date of Patent: January 25, 2011Assignee: Wisconsin Alumni Research FoundationInventors: Noah Hershkowitz, Benjamin Longmier, Scott Baalrud
-
Patent number: 7872244Abstract: A source configured to generate radiation for a lithographic apparatus is disclosed. The source includes an anode, and a cathode. The cathode and the anode are configured to create a discharge in a fuel in a discharge space between the anode and the cathode so as to generate a plasma, the cathode and the anode positioned relative to each other so that, in use, current lines extending between the anode and the cathode are substantially curved so as to create a force that substantially radially compresses the plasma only in a region proximate an upper surface of the cathode or of the anode.Type: GrantFiled: August 8, 2007Date of Patent: January 18, 2011Assignee: ASML Netherlands B.V.Inventors: Vladimir Vitalevich Ivanov, Vadim Yevgenyevich Banine, Arno Jan Bleeker, Konstantin Nikolaevich Koshelev, Pavel Stanislavovich Antsiferov, Vladimir Mihailovitch Krivtsun, Dmitriy Victorovich Lopaev
-
Patent number: 7872406Abstract: An apparatus and a process for generating, accelerating and propagating beams of electrons and plasma at high density, the apparatus comprising: a first dielectric tube, which contains gas; a hollow cathode, which is connected to said first dielectric tube; a second dielectric tube, which is connected to said hollow cathode and protrudes inside, and is connected to, a deposition chamber; an anode, which is arranged around said second dielectric tube, in an intermediate position; means for applying voltage to said cathode and said anode; means for evacuating the gas from the chamber; and means for spontaneous conversion of gas in the first dielectric tube into plasma.Type: GrantFiled: April 5, 2006Date of Patent: January 18, 2011Assignees: Francesco Cina Matacotta, Carlo TalianiInventor: Francesco Cino Matacotta
-
Patent number: 7872207Abstract: A cascade source includes a cathode housing, a number of cascade plates insulated from each other and stacked on top of each other which together bound at least one plasma channel, and an anode plate provided with an outflow opening connecting to the plasma channel. One cathode is provided per plasma channel, which cathode includes an electrode which is adjustable relative to the cathode housing in the direction of the plasma channel. The clamp may be of the collet chuck type. At least a part of the housing of the source may be substantially transparent. A method for controlling the cascade source in use includes monitoring the electromagnetic radiation of the plasma through the substantially transparent housing part, and, dependent on the monitored radiation, controlling the plasma forming process in the source by variation of the gas supply, or variation of the potential difference between the cathode and the anode or a combination thereof.Type: GrantFiled: May 19, 2004Date of Patent: January 18, 2011Assignee: OTB Solar B.V.Inventors: Martin D. Bijker, Leonardus P. M. Clijsen, Franciscus C. Dings, Remco L. J. R. Pennings
-
Publication number: 20110007289Abstract: A device is constructed and arranged to generate radiation by using an electrical discharge through a gaseous medium. The device includes a first electrode and a second electrode, and a liquid supply arranged to provide a liquid to a location in the device. The device is arranged to be electrically supplied with a voltage and to supply the voltage at least partially to the first electrode and the second electrode in order to allow the electrical discharge to be generated in an electrical field created by the voltage. The electrical discharge produces a radiating plasma. The device also includes a shield arranged between the discharge location and a conducting part connected to the first electrode and/or the second electrode.Type: ApplicationFiled: February 23, 2009Publication date: January 13, 2011Inventors: Maarten Marinus Johannes Wilhelmus Van Herpen, Wouter Anthon Soer
-
Publication number: 20110006687Abstract: Method and generator circuit for generating plasmas by means of radiofrequency excitation In order to provide a voltage that maintains the plasma, according to the method, a high-frequency voltage having a defined operating frequency and at least one further high-frequency voltage having in each case a multiple of said operating frequency and in each case an adjustable amplitude and phase are superposed in a phase-locked manner. For a corresponding generator circuit, at least two radiofrequency power generators (1 to 4) are provided, of which one (1) operates at a defined operating frequency (f) and the other(s) (2 to 4) operate(s) at in each case a multiple of said operating frequency (f). All the radiofrequency power generators (1 to 4) are coupled to one another in a phase-locked manner and the relative phase angle and also the respective amplitude of each radiofrequency power generator (1 to 4) can be individually regulated by means of a dedicated matching circuit (5 to 8).Type: ApplicationFiled: October 28, 2008Publication date: January 13, 2011Applicant: AURION ANLAGENTECHNIK GMBHInventor: Roland Gesche
-
Publication number: 20110005461Abstract: A plasma deposition apparatus includes a waveguide conduit having a plurality of slots therein. The waveguide conduit is coupled to a microwave source for transmitting microwaves from the microwave source through the plurality of slots. One or more pipes have an outlet end positioned at each of the plurality of slots for transporting material from one or more material sources to the plurality of slots. The apparatus also includes a plasma chamber in communication with the waveguide tube through the plurality of slots. The plasma chamber receives through said plurality of slots microwaves from the waveguide tube and material to be melted or evaporated from the one or more pipes. The plasma chamber includes a plurality of magnets disposed in an outer wall of the plasma chamber for forming a magnetic field in the plasma chamber. The plasma chamber further includes one or more outlet openings for discharging plasma containing material to be deposited on a substrate.Type: ApplicationFiled: May 7, 2010Publication date: January 13, 2011Inventor: Peter F. Vandermeulen
-
Patent number: 7868556Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.Type: GrantFiled: February 8, 2006Date of Patent: January 11, 2011Assignee: Advanced Micro-Fabrication Equipment, Inc. AsiaInventor: Yaomin Xia
-
Publication number: 20110001429Abstract: A three-dimensional display system is provided which promises to project an image into a volume. The three-dimensional display system produces visible light in a volume at the intersection of two laser beams by forming a plasma at a volume element within the volume and exciting target molecules within the plasma into an excited energy state. The target molecules are characterized by sufficiently sizeable energy state transitions such that visible light is emitted upon transition of the target molecules from an excited energy state to a lower energy state. By rapidly repeating this process according to three-dimensional image data, one or more embodiments of the present invention is able to project a three-dimensional image into a volume without many of the drawbacks of earlier machines.Type: ApplicationFiled: July 1, 2009Publication date: January 6, 2011Inventor: Neal Edwin Davis
-
Publication number: 20110001430Abstract: Provided are an electrode device and an apparatus for generating plasma.Type: ApplicationFiled: January 22, 2010Publication date: January 6, 2011Applicant: TES CO., LTD.Inventors: Hee-Jin KO, Woo-Young CHUNG
-
Publication number: 20100327155Abstract: An illumination method and device has a micro-wave powered plasma source contained by a windowless plasma containment structure. When incorporated as a photo-ionization device in an ion mobility spectrometer (IMS), the resolution of the spectrometer may be improved by operation at higher pressures and through selective ionization of elements and compounds. A gas flows into a discharge gap of a micro-wave ring resonator, but is restricted from flowing away by the windowless containment structure. When microwave power is supplied, the discharge gap is energized and a plasma initiated and sustained. Photons emitted by the plasma photo-ionize a sample gas. As the containment structure is windowless, the wavelength of the emitted radiation depends on the plasma-forming gas, not on the transmission characteristics of a window material. The range of substances in the sample that are ionized may be influenced by selecting the plasma-forming gas.Type: ApplicationFiled: October 31, 2007Publication date: December 30, 2010Applicant: Agilent Technologies, Inc.Inventors: Viorica Lopez-Avila, Arthur Schleifer, Stuart Hansen
-
Publication number: 20100327749Abstract: A plasma power supply system for producing electrical power in the range between 1 kW and 100 kW for a plasma processing system and supplying the power to a plasma chamber through a power line connection, the plasma power supply system includes a power converter, a monitoring section, an arc diverter, a control section with an arc diverter control section and an arc detection section, and an input device wherein the input device is connected to the arc diverter.Type: ApplicationFiled: September 10, 2010Publication date: December 30, 2010Applicant: HUETTINGER ELEKTRONIK GMBH + CO. KGInventor: Moritz Nitschke
-
Patent number: 7858899Abstract: A coaxial microwave plasma torch, comprising, an outside conductor (1) formed in a cylindrical shape, a cylindrical electric discharge tube (3) fixedly inserted into an axial hole (2) formed in the outside conductor on one end face (4) side, and a coaxial cable (6) having one end fitted to the other end face of the outside conductor. An antenna (9) electrically connected to an inside conductor (8) is fitted to the one end of the coaxial cable and extended into the electric discharge tube through a through-hole (11) axially passed through between the other end face (5) of the outside conductor and the bottom face of the axial hole. The outside conductor (7) of the coaxial cable is electrically connected to the outside conductor, and a gas inlet pipeline (13) supplying a gas into the electric discharge tube is fitted in the outside conductor.Type: GrantFiled: March 25, 2005Date of Patent: December 28, 2010Assignee: Adtec Plasma Technology Co., Ltd.Inventors: Shuitsu Fujii, Raju Ramasamy, Takuya Urayama, Kazunari Fujioka
-
Publication number: 20100320915Abstract: Methods and apparatus for providing a Fluorescent Lighting System are disclosed. In one embodiment, the present invention may be used as a fluorescent lamp ballast which is controlled using a non-resonant circuit that allows the ballast to lower to fifty percent the light output of the lamp while providing a corresponding fifty percent reduction in energy used.Type: ApplicationFiled: June 19, 2009Publication date: December 23, 2010Inventors: John T. Martin, Lucien Tournie, Douglas Gene Lockie
-
Publication number: 20100320916Abstract: A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.Type: ApplicationFiled: January 19, 2009Publication date: December 23, 2010Applicant: KYOCERA CORPORATIONInventors: Takashige Yagi, Hiroshi Makino, Shingo Sato
-
Publication number: 20100308730Abstract: A microhollow cathode discharge assembly capable of generating a low temperature, atmospheric pressure plasma micro jet is disclosed. The microhollow assembly has two electrodes: an anode and a cathode separated by a dielectric. A microhollow gas passage is disposed through the three layers. In some embodiments, the passage is tapered such that the area at the first electrode is larger than the area at the second electrode. When a potential is placed across the electrodes and a gas is directed through the gas passage, then a low temperature micro plasma jet can be created at atmospheric pressure or above.Type: ApplicationFiled: July 8, 2009Publication date: December 9, 2010Inventors: Abdel-Aleam H. Mohamed, Karl H. Schoenbach, Robert Chiavarini, Robert O. Price, Juergen Kolb
-
Publication number: 20100308177Abstract: An object moving through a fluid uses plasma to keep turbulent mixing vortices associated with turbulent air away from the majority of the surface of the object. The plasma may be used to enhance physical riblets, or the plasma may create a virtual riblet.Type: ApplicationFiled: June 3, 2009Publication date: December 9, 2010Applicant: Lockheed Martin CorporationInventors: Paul D. McClure, Sergey Macheret, Brian R. Smith, Kurt M. Chankaya
-
Patent number: 7846291Abstract: A processing apparatus of the present invention has a mounted chamber holding a semiconductor wafer and having members for work-processing the substrate under any of heating, plasma and process gas or a combination of them, in which a film of Al2O3 and Y2O3 is formed on an inner wall surface of the chamber and on those exposed surface of the members within the chamber and has a high-corrosion resistance and insulating property and, when the process gas is introduced onto a processing surface of a semiconductor wafer and diffused into it, any product is less liable to be deposited on a plasma generation area and on those members held within the chamber.Type: GrantFiled: May 27, 2003Date of Patent: December 7, 2010Assignee: Tokyo Electron LimitedInventor: Hayashi Otsuki
-
Patent number: 7845310Abstract: An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.Type: GrantFiled: December 6, 2006Date of Patent: December 7, 2010Assignee: Axcelis Technologies, Inc.Inventors: William F. DiVergilio, Aseem K. Srivastava
-
Patent number: 7847485Abstract: A method and a device for artificially generating and showing an aurora and for generating and changing a true-to-life curtain-shaped discharge light emission by using a simple device. In a pressure-reduced chamber, two electrodes are arranged in the X direction and a third electrode is arranged in the Z direction in such a manner that the two electrodes oppose the third electrode and they are apart from each other. A coil generates a magnetic line of force in the Z direction.Type: GrantFiled: July 19, 2006Date of Patent: December 7, 2010Assignee: Iida Home Max Co., Ltd.Inventors: Kazuhiko Mori, Shigeyuki Minami, Yuuji Kurose, Ayumu Watanabe, Yasuhiro Ono, Hideyuki Saito
-
Publication number: 20100301753Abstract: The microwave plasma generator is applied to transmission of electromagnetic field into plasma. The invention consists of the fact that the guiding part (3) has two outputs (4, 4?) between which an input (2) of microwave is placed generated from the microwave power source (5). The input (2) is in the distance (A) from the separation (10) of the first output (4) and in the distance (B) from the separation (10?) of the second output (4?) while the absolute value of the difference of the distances A-B or B-A equals ?/2 where ? is the wave length of the microwave and distances A and B correspond to the trajectory of microwave propagation.Type: ApplicationFiled: September 12, 2008Publication date: December 2, 2010Inventor: Petr Spatenka
-
Patent number: 7842898Abstract: A variable orifice torch for use in a solid free form fabrication system for manufacturing a component from successive layers of metal feedstock material. The variable orifice torch includes a torch structure defining a torch nozzle formed of a highly conductive bulk material. The variable orifice torch further includes a gas flow channel and a variable orifice defined therein. An arc electrode is disposed within the gas flow channel. The variable orifice is defined in the torch nozzle and in alignment with the arc electrode. The variable orifice is coupled to the torch structure in a manner operable to control a flow gas therethrough by varying the size of an aperture defined by the variable orifice.Type: GrantFiled: November 29, 2007Date of Patent: November 30, 2010Assignee: Honeywell International Inc.Inventor: Robbie J. Adams
-
Patent number: 7839223Abstract: A method and apparatus for tuning the operational frequency of an electrical generator coupled to a time-varying load is described. One illustrative embodiment rapidly calculates an error (reflection coefficient magnitude) at the current operational frequency of the electrical generator; adjusts the frequency of the electrical generator by an initial step size so; rapidly calculates a second error; and if the magnitude of the second error is smaller than the magnitude of the first error, then the step size is increased and the frequency is adjusted by the increased step size.Type: GrantFiled: September 30, 2008Date of Patent: November 23, 2010Assignee: Advanced Energy Industries, Inc.Inventors: Gideon Van Zyl, Jeff Roberg
-
Patent number: 7824520Abstract: In the case of generating plasma under atmospheric pressure, the particle generated due to generation of high-density plasma is to be a cause of a defect such as a point defect or a line defect of a display portion in a display device. The present invention is offered in view of the above situation, and provides a plasma treatment apparatus for suppressing generation of a particle. According to the present invention, plasma is generated in a limited minimum region to be treated by a plasma treatment over a substrate to be treated. Generation of a particle is suppressed to a minimum by providing a plurality of plasma generation units generating minimum plasma having a similar size as the limited minimum region, changing a relative position of the plurality of plasma generation units and the substrate to be treated, and performing a plasma treatment to a limited predetermined region.Type: GrantFiled: March 24, 2004Date of Patent: November 2, 2010Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Osamu Nakamura
-
Patent number: 7820935Abstract: A burner design used for thermal treatment of a surface of materials is presented. The burner includes a tubular electrode, a nozzle, a removable rod-shaped electrode which are arranged to form a discharge chamber, a means for vapor generation in the form of a reservoir provided with a flange and filled with a liquid-absorbing material, an electric arc vortex stabilization element, an element for cooling the nozzle and the electrode, and current leads. The reservoir flange is made in the form of a connection fitting and is provided with a partition having a central opening in which the tubular electrode is positioned to enable the formation of a heating element including an evaporator and a vapor superheater, both separated by the partition, the evaporator is provided with grooves for discharging vapor into a collector out of an annular recess on a surface of the vapor superheater arranged outside the reservoir.Type: GrantFiled: May 4, 2006Date of Patent: October 26, 2010Assignee: Plazarium LtdInventors: Vladimir Semenovich Tverskoi, Aleksei Vladimirovich Tverskoi
-
Patent number: 7820981Abstract: The service lifetime of an ion source is enhanced or prolonged by the source having provisions for in-situ etch cleaning of the ion source and of an extraction electrode, using reactive halogen gases (F or Cl), and by having features that extend the service duration between cleanings. The latter include accurate vapor flow control, accurate focusing of the ion beam optics, and thermal control of the extraction electrode that prevents formation of deposits or prevents electrode destruction. An apparatus comprised of an ion source for generating dopant ions for semiconductor wafer processing is coupled to a remote plasma source which delivers F or Cl ions to the first ion source for the purpose of cleaning deposits in the first ion source and the extraction electrode. These methods and apparatus enable long equipment uptime when running condensable feed gases such as sublimated vapor sources, and are particularly applicable for use with so-called cold ion sources.Type: GrantFiled: December 9, 2004Date of Patent: October 26, 2010Assignee: Semequip, Inc.Inventors: Thomas N. Horsky, Robert W. Milgate, III, George P. Sacco, Jr., Dale C. Jacobson, Wade A. Krull
-
Patent number: 7812542Abstract: The object of an arrangement and a method for generating extreme ultraviolet radiation by an electrically operated gas discharge is to improve the adjustment of the layer thickness and, in particular, to prevent an uncontrolled accumulation of the metal layer to be applied to the rotary electrodes during pauses in the pulse operation for generating radiation when, e.g., liquid flows through these rotary electrodes for efficient cooling. In this connection, the rotating speed of the rotary electrodes can be increased in particular until there is always a freshly coated surface region of the electrodes in the discharge area at repetition frequencies of several kilohertz. An edge area to be coated on at least one electrode has at least one receiving area which extends in a closed circumference along the electrode edge on the electrode surface and which is formed so as to be wetting for the molten metal.Type: GrantFiled: January 23, 2008Date of Patent: October 12, 2010Assignee: XTREME technologies GmbhInventors: Guido Hergenhan, Christian Ziener, Mike Moeritz
-
System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
Patent number: 7812329Abstract: A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.Type: GrantFiled: December 14, 2007Date of Patent: October 12, 2010Assignee: Cymer, Inc.Inventors: Alexander N. Bykanov, David C. Brandt, Igor V. Fomenkov, William N. Partlo -
Publication number: 20100253224Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion.Type: ApplicationFiled: November 19, 2009Publication date: October 7, 2010Inventors: Alexei Marakhtanov, Eric Hudson, Rajhinder Dhindsa, Andrew D. Bailey, III
-
Patent number: 7808184Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.Type: GrantFiled: August 18, 2006Date of Patent: October 5, 2010Assignee: Zond, Inc.Inventor: Roman Chistyakov
-
Patent number: 7804250Abstract: An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.Type: GrantFiled: March 9, 2007Date of Patent: September 28, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Andrey Ushakov, Yuri Tolmachev, Vladimir Volynets, Won Ceak Pak, Vasily Pashkovskiy, Sung Chang Park, Yung Hee Lee
-
Patent number: 7800086Abstract: An arrangement for the generation of radiation by a gas discharge has the object of achieving a considerable reduction in the inductance of the discharge circuit for the gas discharge while simultaneously increasing the lifetime of the electrode system. Also, the use of different emitters is ensured. A rotary electrode arrangement accommodated in the discharge chamber contains electrodes which are rigidly connected to one another at a distance from one another and are mounted so as to be rotatable around a common axis. Capacitor elements of a high-voltage power supply for generating high-voltage pulses for the two electrodes are arranged in a free space formed by the mutual distance. The electrodes are electrically connected to the capacitor elements and to a voltage source for charging the capacitor elements.Type: GrantFiled: August 16, 2006Date of Patent: September 21, 2010Assignee: Xtreme technologies GmbHInventors: Christian Ziener, Guido Hergenhan, Frank Flohrer, Juergen Kleinschmidt
-
Patent number: 7799119Abstract: The invention relates to a microwave plasma exciter device which includes a waveguide (23) for concentrating the microwaves; and a plasma generator (110, 120) for forming a plasma, which are disposed in a microwave concentration zone.Type: GrantFiled: June 22, 2007Date of Patent: September 21, 2010Assignee: L'Air Liquide, Societe Anonyme pour l'Etude Et l'Exploitation des Procedes Georges ClaudeInventors: Zenon Zakrzewski, Dariusz Czylkowski, Mariusz Jasinski, Michel Moisan, Daniel Guerin, Christian Larquet, Jean-Christophe Rostaing
-
Publication number: 20100231130Abstract: A plasma radiation source includes a vessel configured to catch a source material transmitted along a trajectory, and a decelerator configured to reduce a speed of the source material in a section of the trajectory downstream of a plasma initiation site.Type: ApplicationFiled: February 25, 2010Publication date: September 16, 2010Applicant: ASML Netherlands B.V.Inventors: Dzmitry LABETSKI, Erik Roelof Loopstra, Gerardus Hubertus Petrus Maria Swinkels, Tom Van Zutphen
-
Patent number: 7795816Abstract: A laser beam is modulated at a very high frequency to produce uniform radiant flux densities on substrate surface processing regions during thermal processing. Beam modulation is achieved by passing the laser beam through a plasma which causes phase randomization within the laser beam. This method may be used for any application where intense, uniform illumination is desired, such as pulsed laser annealing, ablating, and wafer stepper illuminating.Type: GrantFiled: October 8, 2007Date of Patent: September 14, 2010Assignee: Applied Materials, Inc.Inventors: Dean Jennings, Bruce E. Adams, Timothy N. Thomas, Stephen Moffatt
-
Patent number: 7795817Abstract: A plasma power supply system for producing electrical power in the range between 1 kW and 100 kW for a plasma processing system and supplying the power to a plasma chamber through a power line connection, the plasma power supply system includes a power converter, a monitoring section, an arc diverter, a control section with an arc diverter control section and an arc detection section, and an input device wherein the input device is connected to the arc diverter.Type: GrantFiled: November 21, 2007Date of Patent: September 14, 2010Assignee: HUETTINGER Elektronik GmbH + Co. KGInventor: Moritz Nitschke
-
Patent number: 7795818Abstract: A microwave plasma generator in which the generating amount of radicals can be regulated easily with higher reaction efficiency while reducing gas consumption. The microwave plasma generator comprises an outer conductor (2), an inner conductor (3) arranged in the internal space (4) of the outer conductor, a discharge tube (7) having a double tube structure consisting of an inner tube (5) and an outer tube (6) and penetrating the outer and inner conductors in the axial direction, and a cavity (1) having a means for adjusting the position of the inner tube to the outer tube in the axial direction in the discharge tube.Type: GrantFiled: September 12, 2006Date of Patent: September 14, 2010Assignee: Adtec Plasma Technology Co., Ltd.Inventors: Takuya Urayama, Kazunari Fujioka, Masahiko Uchiyama
-
Publication number: 20100225234Abstract: A hollow-cathode plasma generator includes a plurality of hollow cathodes joined together and connected to a power supply for generating plasma in vacuum. Each of the hollow cathodes includes at least one fillister defined therein, a fin formed on a side of the fillister, an air-circulating tunnel in communication with the fillister and a coolant-circulating tunnel defined therein. The fillister is used to contain working gas. The fin receives negative voltage from the power supply for ionizing the working gas to generate the plasma and spread the plasma in a single direction. The working gas travels into the fillister from the air-circulating tunnel. The coolant-circulating tunnel is used to circulate coolant for cooling the hollow cathode.Type: ApplicationFiled: September 4, 2007Publication date: September 9, 2010Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCHInventors: Ching-Pei Tseng, Cheng-Chang Hsieh, Chi-Fong Ai, Chia-Cheng Lee, Tien-Hsiang Hsueh, Chun-Han Wang
-
Patent number: 7791037Abstract: A radiation detection device comprising a plasma display panel (PDP) with a multiplicity of radiation detection pixels, each radiation detection pixel being defined by a hollow elongated Plasma-tube filled with an ionizable gas. Arrays of Plasma-tubes are positioned on a suitable base such as a substrate and used to inspect and detect radiation from a selected object. Each Plasma-tube may be of any suitable geometric configuration and may be used alone or in any combination with one or more Plasma-shells, such as a Plasma-disc, Plasma-dome, and/or Plasma-sphere. Luminescent material may be positioned near or on each Plasma-tube or Plasma-shell to provide or enhance light output. A flexible base substrate may be used to wrap a layer or blanket of radiation detection Plasma-tubes about the selected object. The substrate base may comprise an elongated rod that is used as a probe to detect radiation from an object. An object may be passed through a ring or a cylinder of Plasma-tubes.Type: GrantFiled: March 9, 2007Date of Patent: September 7, 2010Assignee: Imaging Systems TechnologyInventors: Carol Ann Wedding, Thomas J. Pavliscak
-
Patent number: 7789992Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.Type: GrantFiled: May 1, 2006Date of Patent: September 7, 2010Assignee: Samsung Electronics Co., Ltd.Inventor: Won-tae Lee
-
Patent number: 7791281Abstract: Method and apparatus for generating and sustaining a glow discharge plasma in a plasma discharge space comprising at least two spaced electrodes. The method and apparatus are arranged for performing the steps of introducing in the discharge space a gas or gas mixture under atmospheric pressure conditions, energizing the electrodes by applying an AC energizing voltage (Va) to the electrodes, and controlling the energizing voltage (Va) such that at plasma generation a sharp relative decrease of displacement current is provided.Type: GrantFiled: December 22, 2004Date of Patent: September 7, 2010Assignee: Fuji Photo Film B.V.Inventors: Eugen Aldea, Jan Bastiaan Bouwstra, Mauritius Cornelius Maria Van De Sanden, Hindrik Willem De Vries
-
Patent number: 7791041Abstract: This ion source generates a ribbon-like ion beam whose dimension in the Y direction is larger than the dimension in the X direction. This ion source includes a plasma generating vessel having an ion extraction port extending in the Y direction, a plurality of cathodes arranged in a plurality of stages along the Y direction on one side in the X direction in the plasma generating vessel, a reflecting electrode arranged on the other side in the X direction in the plasma generating vessel opposite to the cathodes, and electromagnets for generating magnetic fields along the X direction in regions including the plurality of cathodes in the plasma generating vessel.Type: GrantFiled: September 18, 2008Date of Patent: September 7, 2010Assignee: Nissin Ion Equipment Co., Ltd.Inventors: Takatoshi Yamashita, Tadashi Ikejiri, Keiko Kuzawa, Hideyuki Fujiwara
-
Patent number: 7786455Abstract: An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.Type: GrantFiled: April 2, 2007Date of Patent: August 31, 2010Assignee: Energetiq Technology, Inc.Inventor: Donald K. Smith