Abstract: A plasma processing is performed by providing a first and a second electrodes to be relatively parallelly movable, disposing an object to be processed on the second electrode so as to face the first electrode and providing a blocking member to both end portions of the second electrode, so that a plasma processing space is blocked by the blocking member when the first and second electrodes are moved relatively with each other. A voltage is applied to both the first and the second electrodes and a process gas is introduced into the plasma processing space formed between the first and second electrodes, and the plasma is irradiated to the object. The blocking member is provided so as to extend from the second electrode to the first electrode, and an upper surface of the blocking member is raised higher than a surface level of the object to be processed.

Abstract: An ignition circuit and a method of operating an igniter (preferably a traveling spark igniter) in an internal combustion engine, including a high pressure engine. A high voltage is applied to electrodes of the igniter, sufficient to cause breakdown to occur between the electrodes, resulting in a high current electrical discharge in the igniter, over a surface of an isolator between the electrodes, and formation of a plasma kernel in a fuel-air mixture adjacent said surface. Following breakdown, a sequence of one or more lower voltage and lower current pulses is applied to said electrodes, with a low “simmer” current being sustained through the plasma between pulses, preventing total plasma recombination and allowing the plasma kernel to move toward a free end of the electrodes with each pulse.

Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.

Abstract: A system for modifying a shock wave formed in a fluid by a body to modify effects of the shock wave on information transferred to or from the body. The system includes laser pulses for heating fluid along a path to form a volume of heated fluid expanding outwardly from the path, the path extending from the body and through the shock wave; an element for transferring the information to or from the body; and a timer for timing the transferring of the information relative to the heating of the fluid along the path to modify certain effects of the shock wave on the information.

Abstract: A plasma device having low thermal noise, which results in a high signal-to-noise ratio (SNR) of the plasma device. The plasma device includes devices with a plasma that is responsive to electromagnetic radiation and/or electrical signals. In various configurations, the plasma device has a plasma in which the temperature, resistance, pressure, and/or collision frequency are at a level sufficiently low to produce an acceptable level of noise. In another configuration, the operating frequency of the plasma device is at a level sufficiently high to produce an acceptable level of noise. Decreasing the noise level results in increasing the signal-to-noise ratio and increasing the data rate. The plasma temperature is reduced by operating the plasma device in the afterglow state. The plasma electron temperature is reduced by confining high energy electrons in a potential well and by using an electron emitting filament.

Abstract: A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.

Abstract: A plasma processing apparatus includes a radio frequency generator capable of adjusting a target output power level based on the set power level and the offset level to output radio frequency power; a chamber in which a plasma process is performed; and a power detection unit for measuring radio frequency power level fed to the matching unit. The plasma processing apparatus further includes a generator control unit for controlling the radio frequency power such that the radio frequency power level fed to the matching unit reaches the set power level by calculating the offset level based on the difference between the set power level and the power level measured by the power detection unit and transmitting the set power level and the offset level in digital form to the data input terminal of the radio frequency generator.

Abstract: A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Abstract: An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.

Abstract: A target output device may include: a main body for storing a target material; a nozzle unit, connected to the main body, for outputting the target material as a target; an electrode unit provided so as to face the nozzle unit; a voltage control unit that applies predetermined voltage between the electrode unit and the target material to generate electrostatic force therebetween for pulling out the target material through the nozzle unit; a pressure control unit that applies predetermined pressure to the target material; and an output control unit that causes the target to be outputted through the nozzle unit by controlling signal output timing of each of a first timing signal and a second timing signal, the first timing signal causing the voltage control unit to apply the predetermined voltage between the target material and the electrode unit at first timing, and the second timing signal causing the pressure control unit to apply the predetermined pressure to the target material at second timing.

Abstract: An apparatus for use in mass spectrometry comprising an injector body, an injection tube coupled to the injector body, and a shielding assembly disposed between the injector body and the injection tube. The shielding apparatus is suitable for shielding the injector body from heat generated by a plasma source.

Abstract: A lamp and methods of forming are shown. In one example, a dielectric layer is formed over a gap between conductors in a plasma lamp. Electric arcing is reduced or eliminated, thus allowing tighter gaps and/or higher voltages. In one example a glass frit method is used to apply the dielectric layer. A lamp is shown with a barrier layer that prevents tarnish such as tarnish from sulfur exposure. The barrier layer reduces or prevents degradation of the lamp due to conversion of a conductor material to non-conductive tarnish material.

Abstract: A plasma processing apparatus includes a vacuum chamber, a plasma processing execution portion, a discharge state detecting unit, a window portion, a camera, a first storing portion, a second storing portion and an image data extracting unit. When an abnormal discharge is detected, the image data extracting unit extracts at least moving image data showing a generation state of the abnormal discharge from the first storing portion and stores the extracted moving image data in the second storing portion. When plasma processing is ended without the detection of the abnormal discharge, the image data extracting unit extracts, from the first storing portion, moving image data of a predetermined specific period or still image data of a specific period derived from the moving image data of the first storing portion and stores the extracted moving image data or the extracted still image data in the second storing portion.

Abstract: Provided are an impedance matching method and a matching system performing the same. The method includes: measuring an electrical characteristic of the power transmission line including the matching system and the load; extracting a control parameter for impedance matching from the electrical characteristic of the power transmission line; and controlling the matching system by using the control parameter. The extracting of the control parameter comprises utilizing an analytic coordinate system that quantitatively relates the electrical characteristic of the matching system to the electrical characteristic of the power transmission line.

Abstract: A plasma reactor includes a honeycomb electrode in which a plurality of cells that function as gas passages are partitioned by a partition wall, and a discharge electrode. The honeycomb electrode includes a first gas circulation section that allows a first gas to pass through, and a second gas circulation section that allows a second gas to pass through. The plasma reactor causes the first gas introduced into the first gas circulation section of the honeycomb electrode through the space between the electrodes to undergo a reaction while causing a plasma discharge between the honeycomb electrode and the discharge electrode, and allows the second gas to be introduced into the second gas circulation section of the honeycomb electrode to transfer heat of the second gas to the first gas circulation section to promote the reaction of the first gas.

Abstract: A metrology system monitors radio frequency (RF) power at a plurality of locations in a circuit. The system includes a plurality of RF sensors that generate respective analog signals based on electrical properties of the RF power, a multiplexing module that generates an output signal based on the analog signals, and an analysis module that generates messages based on the output signal. The messages contain information regarding the electrical properties that are sensed by the plurality of RF sensors.

Abstract: An electrostatic fluid accelerator includes an electrode array comprising an array of corona discharge electrodes and an array of accelerating electrodes for moving a fluid. A detector is configured to sense a constituent component of the fluid. A control circuit supplies power to the electrode array and operates the electrostatic fluid accelerator in response to an output from the detector.

Abstract: A plasma source includes a first rod forming a quarterwave antenna, surrounded by at least one parallel rod forming a coupler and which is substantially the same length as the first rod, set to a reference potential, the coupler rods being evenly distributed radially about the first rod, at a distance of around one-fifth to one-twentieth of the quarter of the wavelength.

Abstract: A plurality of molecule components included in a gas are to be ionized at the same time by PI method. For instance, a plurality of molecule components included in a gas generated at a certain instance are accurately analyzed in real time based on PI method. A gas analyzer is provided with a gas transfer apparatus for transferring a gas generated from a sample in a sample chamber to an analyzing chamber; an ionizer for ionizing the gas; a quadruple filter for separating ions by mass/charge ratio; and an ion detector for detecting the separated ions. The ionizer is provided with an ionizing region arranged in the vicinity of a gas exhaust of the gas transfer apparatus, and a lamp for applying light on the ionizing region. Since the lamp outputs light which has light directivity lower than that of a laser beam and travels by spreading, the gas entered the ionizing region in the ionizer receives light in a wide range, and the gas components inside are ionized at the same time.

Abstract: One embodiment comprises a plasma processing system having a plasma chamber, a generator, a feedback component, and a controller. The feedback component is adapted to receive at least one first signal having a level dependent upon the power signal supplied from the generator to the chamber. A feedback output is adapted to emit a second signal to the controller, which is adapted to supply a third signal to the power generator. The third signal is configured to control the power generator to supply the power signal at a power level for a particular processing application. The power generator is further controlled by the controller to one of reduce and remove power from the plasma processing chamber and subsequently increase the voltage level until the power level reaches a threshold level. The power generator is further controlled to subsequently modulate the voltage until the voltage returns to a first voltage level.

Abstract: A method for operating one or more plasma processes in a plasma chamber, with at least two power supplies, the method comprising the following process steps: a. carrying out an arc detection for at least one of the power supplies; b. generating at least one signal relating to the arc detection and/or data relating to the arc detection; transferring the at least one signal and/or the data to a plasma process-regulating device and/or to one or more other power supplies or to one or more of the arc diverter devices associated with the other power supplies.

Abstract: A method and a system for increasing the lifespan of a plasma obtained in the atmosphere. The method includes the following steps: emitting a femtosecond laser pulse, referred to as a first pulse, generating a column of plasma by the filamentation phenomenon, and emitting a second YAG laser pulse, focused by way of an axicon on a line in the plasma column, the energy of the photons of the second laser pulse being greater than the attachment energy of the electrons in the plasma to neutral molecules such as oxygen molecules. The duration of the second pulse is greater than the duration of the first pulse, and the delay between the two pulses is greater than one microsecond.

Abstract: A radio frequency (RF) system includes a control module that allocates M predetermined frequency intervals. The system also includes N RF sources that each applies first RF power to electrodes within a plasma chamber at frequencies within an assigned respective one of the M predetermined frequency intervals. The N RF sources also each respond to second RF power including feedback from the plasma chamber. The N RF sources each include a processing module that adjusts the first RF power based on the second RF power and the respective one of the M predetermined frequency intervals. M and N are integers greater than 1.

Abstract: A microwave resonance plasma generating apparatus, a plasma processing system having the same and a method of generating a microwave resonance plasma are provided. The apparatus includes a microwave generating unit which generates a microwave, and a plasma producing unit which produces electrons and photons of high energy using the microwave generated from the microwave generating unit. The plasma producing unit includes a coaxial waveguide having an inner electrode disposed adjacent to the microwave generating unit, an outer electrode connected to the microwave generating unit and disposed to coaxially surround a portion of the inner electrode, the outer electrode being shorter than the inner electrode, and a dielectric tube disposed between the inner electrode and the outer electrode to insulate between the inner electrode and the outer electrode. The coaxial waveguide utilizes a principle of “cut or truncated electrode of coaxial waveguide” and a resonance phenomenon of Langmiur.

Abstract: Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

Abstract: The present invention is direct to a nano-probe corona tool and uses thereof. A nano-probe corona tool is disclosed having a tip with a diameter in the nano-scale, typically around 100 nm. The nano-probe corona tool is constructed of electrically conductive material. On the other end of the tool, a pulsed voltage source outputs a pulsed voltage to generated a pulsed electrical potential at the tip. The pulsed electrical potential at the tip causes a plasma discharge corona to occur. Uses of the corona discharge include, but are not limited to, optical emission spectroscopy, in the enhancement of deposition of coatings and nanoscale welding, e.g., nanotube or nanowires to a contact pad and welding two nanowires together, and in nanoscale surgery. For example, a nano-probe comprising CNTs may be inserted into cell membranes. The resulting corona discharge may be used to destroy tumors within the cell.

Abstract: An arc suppression arrangement suppresses arcs in a gas discharge device that is operated with an alternating voltage from a power supply. The arc suppression arrangement includes an arc suppression device and an arc identification device that controls the arc suppression device. The arc suppression device includes at least one controllable resistor that is connected in series in an electrical line that extends from an alternating voltage source to an electrode of the gas discharge device. An arc can thereby be prevented from being provided with energy.

Abstract: A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2).

Abstract: A device and a method for generating a truly pulsed plasma flow are disclosed. The device includes a cathode assembly comprising a cathode and a cathode holder, an anode, and two or more intermediate electrodes, the anode and the intermediate electrodes forming a plasma channel expanding toward the anode. The intermediate electrode closest to the cathode may form a plasma chamber around the cathode tip. An extension nozzle forming an extension channel having a tubular insulator along at least a portion of its interior surface is affixed to the anode end of the device. During operation, a voltage is applied between the cathode and the anode and a current is passed through the cathode, the plasma, and the anode. The voltage and current profiles are selected to cause the rapid development of a plasma flow with required characteristics. A substantially uniform temperature and power density distribution of the plasma pulse is achieved in the extension nozzle.

Abstract: An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials.

Abstract: Provided is an apparatus, such as an arc mitigating device, which can include a first plasma generation device and a second plasma generation device. The second plasma generation device can include a pair of opposing and spaced apart electrodes and a low voltage, high current energy source connected therebetween. A conduit can be configured to direct plasma between the first and second plasma generation devices, such that the second plasma generation device receives plasma generated by the first plasma generation. The plasma from the first plasma generation device can act to reduce the impedance of an area between the pair of opposing electrodes sufficiently to allow an arc to be established therebetween due to the low voltage, high current energy source.

Abstract: The invention relates to an induction switch comprising a discharge container filled with gas and a coaxially interleaved electrode device, and to a corresponding method for commutating high voltages. The inductive production of a dense plasma and the subsequent flooding of an electrode gap with the plasma ions produced enables the commutation of high currents in the kiloamp range when there are blocking voltages of over 500 kV. Such an induction switch only requires a single discharge gap, can be used over a very wide voltage range, and avoids the problem of electrode erosion as a result of the electrode-free energy coupling.

Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.

Abstract: Provided are an apparatus for normal pressure plasma ignition and a method for normal pressure plasma ignition using the same. The apparatus for normal pressure plasma ignition of the present invention comprises a wave guide tube wherein microwaves are applied, a dielectric tube that penetrates said wave guide tube and introduces a reactant gas, and an ignition apparatus for normal pressure plasma wherein microwaves are applied in said dielectric tube to turn said reactant gas into plasma, wherein said ignition apparatus penetrates said dielectric tube and includes an ignition rod that emits thermal electrons as said microwaves are applied in said dielectric tube. The apparatus for normal pressure plasma ignition according to the present invention enables ignition to be accomplished without power, so that the problems with the prior art that requires high voltage (excessive power, stability issues) may be avoided at the same time.

Abstract: A vacuum plasma generator with an output for feeding a plasma discharge for treatment of workpieces in a vacuum chamber has a connection for the junction to AC voltage mains, a rectifier connected to a converter with a control input for the setting and/or regulation of the converter output voltage, and a controlled full bridge circuit connected to the converter output with a potential-free generator output, which transposes the converter output voltage into pulses of 1 to 500 kHz. A potential-isolating transformer is switched into the bridge for the galvanic decoupling of the generator output.

Abstract: A capacitively coupled plasma reactor includes a plasma reactor, a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes to induce plasma discharge inside the plasma reactor, a main power supply source to supply radio-frequency power, and a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes.

Abstract: To sustain uniform generation of plasma constantly over a large area. In the surface wave excitation plasma processing device, a plasma source includes: a microwave generator, a microwave waveguide and a dielectric block; and a plasma source also includes: a microwave generator, a microwave waveguide and a dielectric block. The lid of a chamber is fixed onto the microwave waveguides in parallel, and the dielectric blocks disposed in the chamber. A reflecting plate is disposed between the dielectric blocks so that electromagnetic waves propagating through the dielectric blocks are prevented from advancing into the counterpart dielectric blocks as reflected waves. Consequently, the plasma sources are controlled independently. Furthermore, a side reflector is disposed at outer circumference of each of the dielectric blocks so that a standing waves of the electromagnetic waves propagating through the dielectric blocks is formed thus forming a large area standing wave mode of surface waves uniformly.

Abstract: Fluctuations in a plasma characteristic such as load impedance are compensated by a controller that modulates a stabilization RF generator coupled to the plasma having a frequency suitable for stabilizing the plasma characteristic, the controller being responsive to the fluctuations in the plasma characteristic.

Abstract: An arrangement for generating extreme ultraviolet radiation by an electrically operated gas discharge which achieves an improvement in the adjustment of the layer thickness when applying a molten metal to the electrode surfaces and provides better protection against the uncontrolled spreading of molten metal into the environment that is associated with an increase in the rotational speed of the electrodes. It should be possible to increase the rotational speed to the extent that unconsumed discharge zones of the electrodes are always situated in the discharge area at repetition frequencies of several kilohertz. An edge area to be covered has at least one receiving area which extends circumferentially in a closed manner along the edge of the electrode on the electrode surface and which is constructed so as to be wetting for the molten metal and to which a liquid dispensing nozzle is directed for regenerative application of the molten metal.

Abstract: A radiofrequency plasma generating device, including: a control module generating a control signal at a control frequency, a power supply circuit including a breaker switch controlled by the control signal, the breaker switch applying an excitation signal to an output of the power supply circuit at the control frequency defined by the control signal, a resonator exhibiting a resonant frequency of greater than 1 MHz, connected to the output of the power supply circuit and adapted to generate a voltage for making a spark when it is excited by the excitation signal, and a mechanism monitoring the control module and configured to modify the frequency of the resonator excitation signal in a manner synchronous with the control signal, during application of the excitation signal.

Abstract: A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract: An RF hollow cathode plasma source consists of a vacuum chamber, a pipe, a hollow cathode, at least two compartments, a conduit and input electrodes. The pipe is inserted into the chamber for introducing working gas into the chamber. The hollow cathode is disposed in the chamber and formed with a large number of apertures. At least two compartments are located below the hollow cathode. Each of the compartments includes small apertures for uniformly spreading the working gas into the apertures of the hollow cathode. The conduit is disposed along two sides of the hollow cathode to circulate cooling water around the hollow cathode. The plural input power leads are arranged near the hollow cathode. The input power leads, the pipe and the conduits are connected to the hollow cathode though the electrically-insulated walls of the grounded vacuum chamber.

Abstract: A method for tracking a variable resonance condition in a plasma coil during creation of plasma from a gas flowing in a plasma torch adjacent to the plasma coil comprises: providing a radio-frequency (RF) power source comprising a power amplifier that generates a radio-frequency power signal with an adjustable operating frequency; providing a high-voltage ignition charge from said RF power source to the gas in plasma torch so as to create an electrical discharge through said gas so as to create a test sample comprising a partial plasma state within said plasma torch; and applying an RF power signal from said plasma coil to said test sample in said plasma torch, wherein said adjustable operating frequency of said power amplifier tracks said variable resonance condition of said plasma coil such that said test sample in the plasma torch achieves a full plasma state.

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract: Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers.

Abstract: An inductive plasma applicator comprises a ferromagnetic inductively coupled source and an electrode with a hole pattern centered with respect to the plasma source. Such plasma applicator provides an efficient energy transfer to the plasma. The plasma applicator is preferably manufactured using a technology for producing electrical circuits. The electrode and a coil of the ferromagnetic inductively coupled plasma source are metal track portions formed on an insulating substrate. For example, the plasma applicator is manufactured using printed circuit board technology.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.

Abstract: There is provided by this invention an improved rf power control device for plasma applications for optimization of the feedback control voltage in the presence of harmonic and non-harmonic spurious frequencies. In this system, an oscillator and mixer, similar to those normally used in radio receiver applications are placed at the sampled output of the solid state rf signal source used for plasma ignition. The sampled output is mixed to a low frequency and filtered to remove the spurious frequencies that is created in the non-linear plasma. In this way, the feedback power control essentially ignores the spurious frequencies. In this application, the oscillator and mixer do not interfere with other desirable system characteristics and effectively isolate the feedback control voltage from changes in plasma spurious content. This allows rf power to be delivered to the plasma with greater accuracy than would otherwise be possible with conventional power control device and methods.