Abstract: A wafer and a test method thereof are provided. The invention utilizes a first group of probes to perform a high voltage stress (HVS) test on a first chip, and utilizes a second group of probes to perform a function test on a second chip, where a period of the high voltage stress test overlaps a period of the function test, thereby greatly decreasing the test time of the wafer.

Abstract: An electronic device for use with a probe head in automated test equipment includes first and second pluralities of semiconductor devices. The first plurality of semiconductor devices is arranged to form at least one driver arranged to couple to a device under test. The at least one driver is configured to transmit a signal to the at least one device under test. The second plurality of semiconductor devices is arranged to form at least one receiver arranged to couple to the device under test. The at least one receiver is configured to receive a signal from the at least one device under test. Each of the second plurality of semiconductor devices has a thickness less than about 300 ?m exclusive of any electrical interconnects. The at least one receiver is adapted to mount directly to the probe head.

Abstract: A detection circuit and one or more wires or circuit traces are included in a die. The combination is used to detect mechanical failure of the substrate, e.g. silicon after singulation of the dice from the wafer. Failures may be detected at different regions or planes within the die, and the tests may be performed during operation of the packaged die and integrated circuit, even after installation and during operation of a larger electronic device in which it is incorporated. This is especially useful for chip scale packages, but may be utilized in any type of IC package.

Abstract: A semiconductor wafer resting on a contact element has a spatially distributed force applied to its frontside and an equal and opposing force applied to its backside. The contact element comprises a solid immersion lens (SIL), and has an area less than the area of the wafer, but no less than the larger of the area of an optical collection area and an electrical probe assembly. The equal and opposing forces cause the wafer to conform to the shape of the contact element. Measurements, including electrical testing, optical probing and wafer characterization are performed on the wafer.

Abstract: A wafer of semiconductor integrated circuits with wafer-level chip-scale packages is tested in two stages. The chip-scale packages include conductive posts extending through a sealing layer and capped by terminals. Measurements strongly affected by contact resistance are carried out before the terminals are formed, using a first probe card having probe pins that contact the ends of the conductive posts. Other measurements are carried out after the terminals are formed, using a second probe card having probe pins that contact the terminals. Accurate measurements can be made in this way even if the terminals are lead-free solder bumps with variable contact resistance. Fabrication yields are improved accordingly.

Abstract: A method for wafer level testing is provided which includes providing a wafer having an integrated circuit formed thereon, applying a signal to energize the integrated circuit, the signal including increasing steps or decreasing steps that range between a first level and a second level, and determining whether the integrated circuit complies with a test criteria after applying the signal.

Abstract: The inventive concept provides a wafer test method and a wafer test apparatus. The wafer test method can recognize the amount of residuals generated in a sidewall of the metal-containing layer pattern and the extent of corrosion of a sidewall of the metal-containing layer pattern using the measured electric resistance by supplying an electrolyte so that the electrolyte is in contact with a portion of the metal-containing layer pattern in a predetermined chip region and measuring an electric resistance between a first electrode which is electrically in contact with the other portion of the metal-containing layer pattern and a second electrode which is in contact with the electrolyte in the predetermined region. Thus, a wafer test method and a wafer test apparatus can be embodied by an in-line method without dividing a wafer into each chip.

Abstract: A voltage driver is provided having an input to receive test parameters from a microcontroller. The voltage driver having a first amplifier to provide an input to a first switch, based on the test parameters. The first switch having an output to a first connector such as a probe adapted to be connected to a device under test or DUT. A second switch having an input from a second connector to the device under test, the output of the second switch connected to a ground. A third switch has an input connected to the second switch input, the third switch having an output connected to the first connector to the device under test, wherein the first switch is open, and the second and third switch are closed to set the first connector and the second connector to ground. A buffer is provided such that the microcontroller is sets the test parameters in the first voltage driver, the first voltage driver is adapted to provide test data to the buffer.

Abstract: A method includes providing a plurality of failure dies, and performing a chip probing on the plurality of failure dies to generate a data log comprising electrical characteristics of the plurality of failure dies. An automatic net tracing is performed to trace failure candidate nodes in the failure dies. A failure layer analysis is performed on results obtained from the automatic net tracing. Physical failure analysis (PFA) samples are selected from the plurality of failure dies using results obtained in the step of performing the failure layer analysis.

Abstract: The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.

Abstract: An evaluation method and apparatus is provided for evaluating a displacement between patterns of a pattern image by using design data representative of a plurality of patterns superimposed ideally. A first distance is measured for an upper layer pattern between a line segment of the design data and an edge of the charged particle radiation image, a second distance is measured for a lower layer pattern between a line segment of the design data and an edge of the charged particle radiation image; and an superimposition displacement is detected between the upper layer pattern and lower layer pattern in accordance with the first distance and second distance.

Abstract: A semiconductor device is formed on a semiconductor wafer. The semiconductor device has: an output buffer configured to externally output an output signal received from an internal circuit; an input buffer configured to output an input signal externally received to the internal circuit; a switch configured to control electrical connection between an output terminal of the output buffer and an input terminal of the input buffer; a first transmission path provided in a scribe region of the semiconductor wafer and connecting between the output terminal and the switch; and a second transmission path provided in the scribe region and connecting between the input terminal and the switch.

Abstract: Crack sensors for semiconductor devices, semiconductor devices, methods of manufacturing semiconductor devices, and methods of testing semiconductor devices are disclosed. In one embodiment, a crack sensor includes a conductive structure disposed proximate a perimeter of an integrated circuit. The conductive structure is formed in at least one conductive material layer of the integrated circuit. The conductive structure includes a first end and a second end. A first terminal is coupled to the first end of the conductive structure, and a second terminal is coupled to the second end of the conductive structure.

Abstract: A circuit portion (100) of an IC comprises a plurality of conductive tracks (130) for coupling respective circuit portion elements (150), e.g. standard logic cells, to a power supply rail (110), with the conductive tracks (130) being coupled to the power supply rail (110) via at least one enable switch (132). The circuit portion (100) further comprising an element (160) for determining a voltage gradient over the circuit portion (100) in a test mode of the integrated circuit (600), which is conductively coupled to the conductive tracks (130). The element (160) has a first end portion (164) for coupling the element (160) to the power supply terminal and a second end portion (166) for coupling the element (160) to the output (620) in the test mode. This facilitates IDDQ testing of the circuit portion (100) by means of measuring a voltage gradient over the element (160).

Abstract: A system and method for improved voltage contrast inspection is disclosed. In one embodiment the temporal response to voltage contrast is considered to find an optimal acquisition time. In another embodiment, multiple optimal acquisition times are identified. The identified acquisition times are used in voltage contrast inspection of semiconductor fabrication, and are well-suited to SOI technology.

Abstract: Diagnostic tools for testing wafer-level IC devices, and a method of making the same. The first diagnostic tool can include a first compliant printed circuit with a plurality of contact pads configured to form an electrical interconnect at a first interface between distal ends of probe members in the wafer probe and contact pads on a wafer-level IC device. A plurality of printed conductive traces electrically couple to a plurality of the contact pads on the first compliant printed circuit. A plurality of electrical devices are printed on the first compliant printed circuit at a location away from the first interface. The electrical devices are electrically coupled to the conductive traces and are configured to provide one or more of continuity testing or functionality of the wafer-level IC devices. A second diagnostic tool includes a second compliant printed circuit electrically coupled to a dedicated IC testing device.

Abstract: A probe wafer electrically connected to a semiconductor wafer on which a plurality of semiconductor chips are formed includes: a wafer substrate for pitch conversion including a wafer connection surface and an apparatus connection surface opposing the wafer connection surface; a plurality of wafer connection terminals formed on the wafer connection surface of the wafer substrate for pitch conversion, at least one wafer connection terminal provided for each of the semiconductor chips and electrically connected to an input/output terminal of the corresponding semiconductor chip; a plurality of apparatus connection terminals formed on the apparatus connection surface of the wafer substrate in one-to-one relation with the plurality of wafer connection terminals at an interval different from an interval of the wafer connection terminals, to be electrically connected to an external apparatus; and a plurality of transfer paths, each electrically connecting a corresponding wafer connection terminal to an apparatus co

Abstract: A probe card is provided which includes: probe needles electrically contacting input/output terminals of an IC device formed on a semiconductor wafer W; a mount base on which the probe needles are mounted; a support column supporting the mount base, a circuit board having interconnect patterns electrically connected to the probe needles via bonding wires; and a base member and stiffener for reinforcing the probe card. The mount base and the circuit board are noncontact.

Abstract: [Problems to be solved] To provide a test-use individual substrate capable of improving testing accuracy and connecting reliability. [Means for solving the Problems] A test-use individual substrate 30 which is used for testing a semiconductor wafer, comprises a main body portion 31, thin portions 321, 322 extending from the main body portion 31 and being relatively thinner than the main body portion, and bumps 33 provided on the thin portions 321, 322. [Selected Drawing] FIG.

Abstract: A test system for testing a large number of dice on a semiconductor wafer without repositioning test probes is disclosed. The test system includes a set of dice under test (DUT) connected together by a plurality of signal buses formed on a semiconductor wafer, at least one test die designed for carrying out tests of the dice under test, the test die having a set of pads to be connected to one or more probes of an external test apparatus, and a probe card with at least one multiplexer implemented in the probe card, such that the test die is capable of receiving signals from the external test apparatus to select any die under test within the set via the multiplexer and the signal buses without repositioning the probes.

Abstract: There is provided a method of measuring a leakage current or a dielectric breakdown voltage of a semiconductor wafer that has a base wafer and a buffer layer formed on the base wafer. The method includes providing, on the buffer layer, a plurality of electrodes including a hole injection electrode made of a material that injects a hole into the buffer layer when an electric field is applied thereto, measuring an electric current flowing through a pair of electrodes or a voltage between the electrodes when a voltage or an electric current is applied to the pair of electrodes, the electrodes including at least one hole injection electrode, and measuring a leakage current or a dielectric breakdown voltage caused by hole migration in the semiconductor wafer based on the current flowing through the pair of electrodes or the voltage generated between the pair of the electrodes.

Abstract: A test system may include a test device, a switching unit and/or a test board. The test device may be configured to generate a first test signal swinging between a first voltage level and a second voltage level, and the first voltage level may be lower than the second voltage level. The switching unit may be coupled to the test device, and configured to switch the first test signal to provide a second test signal swinging between a third voltage level and a fourth voltage level. The third voltage level may be lower than the fourth voltage level. A plurality of devices under test (DUTs) may be mounted on the test board. Each of the plurality of DUTs may be connected in parallel with respect to one another to the switching unit through a transmission line.

Abstract: A system and method for wafer level testing of semiconductor chips are provided. In one embodiment, the system comprises a plurality of semiconductor chips disposed in a wafer, each semiconductor chip having at least one port for receiving test data and at least one connection disposed in a kerf region of the wafer between at least one port of a first semiconductor chip and at least one port of at least one second semiconductor chip in the plurality of semiconductor chips, wherein the first semiconductor chip is configured to send the test data to the at least one second semiconductor chip via the at least one connection. Additionally, the plurality of semiconductor chips may comprise at least one core logic configured to pass the test data to the at least one second semiconductor chip via the at least one connection.

Abstract: Disclosed is a semiconductor wafer testing apparatus that resolves the following problems which arise when semiconductor wafers become larger: (1) complexity of stage acceleration/deceleration control; (2) throughput reduction; and (3) increased vibration of the stage support platform during the stage inversion operation (deterioration in resolution). In the semiconductor wafer testing apparatus for resolving these problems, a wafer is rotated, an electro beam is irradiated onto the rotating wafer from a scanning electron microscope, and secondary electrons emitted from the wafer are detected. The detected secondary electrons are A/D converted by an image processing unit, realigned by an image data realignment unit, and then image-processed for display. As a result, image information of all dies of a wafer can be acquired without a large amount of movement of the stage in the X and the Y directions.

Abstract: Disclosed is a method and a system for automatically managing probe mark shifts. A determination is made from test data as to whether a die on a wafer is defective. A probe mark check on the wafer is made to determine whether a probe mark is shifted. Necessary recovery action is performed in response to the probe mark being shifted. In the probe mark check, a plurality of probe mark positions are selected from the test data. A determination is then made as to whether at least one of the plurality of probe mark positions violates an engineering rule.

Abstract: System and methods transfer data over a microcontroller system test interface. The system can read data from and write data to microcontroller system memory using the described method. The method provides for the efficient transfer of data, minimizing redundancies and overhead present in conventional microcontroller test system protocols.

Abstract: A method and apparatus are provided for implementing optimized speed sorting of microprocessors at wafer test. A combination of speed-predicting metrics are measured early in the manufacturing process and are applied to a unique algorithm to properly sort parts into appropriate speed bins. The method significantly improves the accuracy of predicting the chip speed over conventional speed-predicting methods.

Abstract: A method provides an improved checking of repeatability and reproducibility of a measuring chain, in particular for quality control by semiconductor device testing. The method includes testing steps provided for multiple and different devices to be subjected to measurement or control through a measuring system that includes at least one chain of measuring units between a testing apparatus (ATE) and each device to be subjected to measurement or control. Advantageously, the method comprises checking repeatability and reproducibility of each type of unit that forms part of the measuring chain and, after the checking, making a correlation between the various measuring chains as a whole to check repeatability and reproducibility, using a corresponding device subjected to measurement or control.

Abstract: A semiconductor wafer includes a plurality of integrated circuit (IC) die areas for accommodating IC die that include at least a first subcircuit having at least one matched component portion that includes at least two matched devices. The first subcircuit is arranged in a layout on the IC die. A plurality of scribe line areas having a scribe line width dimension are interposed between the plurality of IC die areas. At least one subcircuit-based test module (TM) is positioned within the scribe line areas, wherein the subcircuit-based TMs implement a schematic for the first subcircuit with a TM layout that copies the layout on the IC die for at least the two matched devices in the matched component portion and alters the layout on the IC die for a portion of the first subcircuit other than the matched devices in matched component portion to fit the TM layout of the first subcircuit within the scribe line width dimension.

Abstract: An arrangement is provided for testing DUTs with a chuck that has a support surface for supporting of a DUT as well as for supplying the support surface with a defined potential, or for connecting the DUT. The arrangement further includes a positioning device for positioning the chuck as well as an electromagnetic shielding housing enclosing at least the chuck. Inside the housing and adjacent to the chuck, a signal preamplifier is arranged whose signal port facing the chuck is electrically connected with the support surface, wherein the signal preamplifier is moveable together with the chuck by the positioning device in a way that it holds its position constant relative to the chuck during positioning. The signal preamplifier is connected to a measurement unit outside of the housing via a measurement cable.

Abstract: A method for monitoring device characteristics of semiconductor integrated circuits. The device characteristics includes censored data and uncensored data. The method includes determining a plurality of minimum breakdown voltages numbered from 1 through N, respectively, for a plurality of lots (e.g., wafer fabrication lots) numbered from 1 through N. Each of the plurality of minimum breakdown voltages is respectively indicative of the plurality of samples through order statistics. One or more of the plurality of samples includes one or more uncensored data points and one or more censored data points. The method includes processing the minimum breakdown voltages, respectively, for the plurality of lots. Each of the minimum breakdown voltages is processed for the respective plurality of lots and is indicative of a population characteristic breakdown voltage numbered from 1 through N for the respective lot numbered from 1 through N.

Abstract: A polishing head is tested in a test station having a pedestal for supporting a test wafer and a controllable pedestal actuator to move a pedestal central wafer support surface and a test wafer toward the polishing head. In another aspect of the present description, the test wafer may be positioned using a positioner having a first plurality of test wafer engagement members positioned around the pedestal central wafer support surface. In another aspect, the wafer position may have a second plurality of test wafer engagement members positioned around an outer wafer support surface disposed around the pedestal central wafer support surface and adapted to support a test wafer. The second plurality of test wafer engagement members may be distributed about a second circumference of the ring member, the second circumference having a wider diameter than the first circumference. Additional embodiments and aspects are described and claimed.

Abstract: A semiconductor wafer analysis system is provided. In an embodiment, the semiconductor wafer analysis system includes a tester to test semiconductor wafers manufactured by at least one manufacturing facility, a wafer map generation module to generate wafer maps on the basis of the test results from the tester, and a wafer analysis module. The wafer analysis module may include a data generation module that divides each wafer map into a plurality of defect analysis regions and generates feature vectors representing the semiconductor wafers, and an operation module that statistically analyzes the feature vectors.

Abstract: One embodiment is a probe head for contacting microelectronic devices substantially lying in a test plane, the probe head including: (a) one or more substrate tiles having one or more probe tips disposed on a top surface thereof; and (b) a registration-alignment apparatus that holds the one or more substrate tiles: (i) in position so that the one or more probe tips are held in the test plane, and (ii) aligned so that the one or more probe tips are substantially coplanar to the test plane, which registration-alignment apparatus includes: (i) one or more capture elements affixed, directly or indirectly, to a frame; (ii) three or more posts mechanically supporting each of the one or more substrate tiles; and (iii) alignment actuators affixed, directly or indirectly, to the frame and the posts, which alignment actuators may be actuated to enable the posts to move in response to forces applied thereto from the one or more substrate tiles, and may be actuated to prevent the posts from moving.

Abstract: A probe apparatus is provided with a plurality of probe tiles, an interchangeable plate for receiving the probe tiles, a floating plate being disposed between the respective probe tile and a receiving hole on the interchangeable plate, and a control mechanism providing multi-dimensional freedom of motions to control a position of the probe tile relative to the respective receiving hole of the interchangeable plate. A method of controlling the floating plate is also provided by inserting a pair of joysticks into two respective adjustment holes disposed on the floating plate and moving the pair of joysticks to provide translational motions (X-Y) and rotational (theta) motion of the floating plate, and turning the pair of jack screws clockwise and counter-clockwise to provide a translational motion (Z) and two rotational (pitch and roll) motions of the floating plate.

Abstract: Embodiments of the present disclosure relate to a system and method for testing an embedded circuit in a semiconductor arrangement as part of an overall circuit that is located on a semiconductor wafer, the system and method comprising an arrangement comprising an overall circuit with at least one input and output. The overall circuit may be provided with an embedded circuit that is not directly connected to the inputs and outputs or may be connected thereto by being specially switched. Switching elements and test islands that are connected thereto may be provided such that the input or the output of the embedded circuit may be connected to the test islands via the switching elements in case of a test. The switching elements may be switched to said test mode in case of a test by applying a voltage to the test island, or the switching elements may be switched in this manner.

Abstract: A wafer test probe for testing integrated circuitry on a die is disclosed. The wafer test probe includes a membrane core. The wafer test probe also includes circuitry within the membrane core. The circuitry within the membrane core includes at least one portion of an inductor. The wafer test probe further includes a probe tip.

Abstract: A test system for testing a plurality of semiconductor chips formed on a semiconductor wafer includes: a test wafer on which a plurality of test circuits corresponding to the plurality of semiconductor chips are formed, each test circuit testing a corresponding one of the plurality of semiconductor chips based on test data provided to the test circuit; where each of the plurality of test circuits includes a nonvolatile and rewritable pattern memory for storing the test data such as pattern data and sequence data, and the test system writes the same test data to all the plurality of test circuits in parallel.

Abstract: In an embodiment, a plurality of semiconductor chip portions is provided with respect to each reticle unit in a semiconductor wafer. Each of the semiconductor chip portions is provided with a first identification code generation circuit to generate a first identification code, and a switching circuit. The switching circuit controls connection with outside. Each of second identification code generation circuits is provided on dicing line areas within each reticle unit, and generates a second identification code to select the corresponding reticle unit. Coincidence detection circuits are provided on the dicing line areas. Each of the coincidence detection circuits determines whether or not the corresponding first and second identification codes and a chip select signal coincide with each other. Bus lines are provided on the dicing line areas. One ends of the bus lines are connected to the circuits, and the other ends are connected to test pads.

Abstract: A wafer inspection device, which inspects the electrical properties of a semiconductor wafer on which a semiconductor integrated circuit is formed, and the wafer inspection device has: a holding mechanism for holding a probe card; a wafer stage that holds the semiconductor wafer on the upper surface and is movably provided; and a pressing mechanism that are held and press the wafer stage against the probe card. The wafer stage is provided on the outer periphery with a seal ring. The seal ring forms a sealed space in a state where the wafer and the probe card are brought close to each other by contacting the probe card and is provided in such a manner as to reduce the pressure of the sealed space.

Abstract: A burn-in and electrical test system (20) includes a temperature controlled zone (22) and a cool zone (24) separated by a transition zone 25. The temperature controlled zone (22) is configured to receive a plurality of wafer cartridges (26) and connect the cartridges (26) to test electronics (28) and power electronics (30), which are mounted in the cool zone (24). Each of the wafer cartridges (26) contains a semiconductor wafer incorporating a plurality of integrated circuits. The test electronics (28) consists of a pattern generator PCB (100) and a signal driver and fault analysis PCB (102) connected together by a parallel bus (104). The pattern generator PCB (100) and the fault analysis PCB (102) are connected to a rigid signal probe PCB (104) in cartridge (26) to provide a straight through signal path.

Abstract: An integrated circuit integrated on a semiconductor material die and adapted to be at least partly tested wirelessly, wherein circuitry for setting a selected radio communication frequencies to be used for the wireless test of the integrated circuit are integrated on the semiconductor material die.

Abstract: In an apparatus and method for monitoring defects in wafers, a monitoring circuit is fabricated on an area of each one of the wafers. The monitoring circuit includes representative devices that replicate similar devices located in a die area of the wafers. Defects if present in the representative devices contribute to a generation of a noise, thereby causing an imbalance in a differential signal measurable across selected ones of the representative devices. A digitizing circuit that uses a common mode voltage as a reference to measure the imbalance digitizes the differential signal to a digital signal, the digital signal being indicative of the noise generated by the defects. The digital signal is stored over a configurable time interval to form a digital bit stream. The digital bit stream is compared to a reference to determine whether the defeats are within an allowable range.

Abstract: The invention relates to a tester apparatus of the kind including a portable supporting structure for removably holding and testing a substrate carrying a microelectronic circuit. An interface on the stationary structure is connected to the first interface when the portable structure is held by the stationary structure and is disconnected from the first interface when the portable supporting structure is removed from the stationary structure. An electrical tester is connected through the interfaces so that signals may be transmitted between the electrical tester and the microelectronic circuit to test the microelectronic circuit.

Abstract: A wafer translator and a wafer, removably attached to each other, provides the electrical connection to electrical contacts on integrated circuits on a wafer in such a manner that the electrical contacts are substantially undamaged in the process of making such electrical connections. Various embodiments of the present invention provide a gasketless sealing means for facilitating the formation by vacuum attachment of the wafer/wafer translator pair. In this way, no gasket is required to be disposed between the wafer and the wafer translator. Air, or gas, is evacuated from between the wafer and wafer translator through one or more evacuation pathways in the gasketless sealing means.

Abstract: A fast testable wafer includes a die group, testing points located on dies, a scribe line located between the dies, and a plurality of testing pads disposed in the scribe line area. The testing points comprise bonding pads or electrodes of internal circuits within the dies. The testing pads and bonding pads may be electrically connected and arranged suitably such that testing probes may be electrically connected to the testing pads and bonding pads easily so as to test the plurality of dies at about the same time. Through suitable circuits on the wafer, different circuit routes may be selected to connect the testing pads and different testing points on the dies so as to test a plurality of dies without moving the testing probes and thereby accelerating the test.

Abstract: A semiconductor wafer includes a plurality of die areas including circuit elements, and at least one test module (TM) on the wafer outside the die areas. The TMs include a test circuit including plurality of test transistors arranged in a plurality of rows and columns. The plurality of test transistors include at least three terminals (G, S, D and B). The TMs each include a plurality of pads. The pads include a first plurality of locally shared first pads each coupled to respective ones of a first of the three terminals, a second plurality of locally shared second pads each coupled to respective ones of a second of the three terminals, and at least one of the plurality of pads coupled to a third of the three terminals. The TM provides at least 2 pin transistor selection for uniquely selecting from the plurality of test transistors for testing.

Abstract: Disclosed is a method for operating a test apparatus in which the testing efficiency is drastically increased. The test apparatus has a plurality of stages for testing wafers by using operation buttons displayed on the operating screens of each of a plurality of monitors. Exclusion condition buttons for excluding operation buttons are set in at least one monitor using exclusion condition data prepared by combining data required to perform various functions of the test apparatus and an exclusion condition pattern prepared by combining the exclusion condition of the exclusion condition data into data for deciding whether the operating button configured to operate each function can be pressed or not. Also, display of the screen that satisfies the exclusion condition for at least one monitor is prevented.

Abstract: A method for wafer level testing is provided which includes providing a wafer having an integrated circuit formed thereon, applying a signal to energize the integrated circuit, the signal including increasing steps or decreasing steps that range between a first level and a second level, and determining whether the integrated circuit complies with a test criteria after applying the signal.

Abstract: A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.