Abstract: Systems, apparatuses, and methods for implementing low voltage clock swing sequential circuits are described. An input signal is coupled to the gates of a first P-type transistor and a first N-type transistor of a first transistor stack. A low voltage swing clock signal is coupled to the gate of a second N-type transistor of the first transistor stack. An inverse of the input signal is coupled to the gates of a second P-type transistor and a third N-type transistor of a second transistor stack. The low-swing clock is coupled to the gate of a fourth N-type transistor of the second transistor stack. A first end of one or more enabling P-Type transistors with gates coupled to the low-swing clock is coupled to the first P-type transistor's drain, and a second end of the one or more enabling P-Type transistors is coupled to the second P-type transistor's drain.

Abstract: A semiconductor circuit and a layout system of the semiconductor circuit, the semiconductor circuit including a latch; a feedback inverter that receives an output signal of the latch via a first node and provides a feedback signal to the latch responsive to the output signal of the latch; and an output driver which receives the output signal of the latch via the first node and provides an output signal externally of the semiconductor circuit. The output driver includes an even number of inverters, and the latch, the feedback inverter, and the output driver share a single active region formed without isolation.

Abstract: Systems are provided for implementing a hybrid resistor-memristor crossbar array, which allows for flexible conductance to be used in implementing the weight matrix of a neural network. The hybrid resistor-memristor crossbar array may include resistor crossbars, each resistor having a static conductance value. The hybrid resistor-memristor crossbar array may also have a memristor coupled to an output line associated with the resistor crossbar array, wherein the memristor has a variable conductance value, and further wherein the static conductance values and the variable conductance value are set to calculate a matrix-vector multiplication associated with a weight matrix of a neural network. An expected range of coefficients for a weight matrix of a neural network can be given by the Discrete Transform Cosine (DCT). Accordingly, the static conductance values of the resistors in the resistors crossbar array are set to values equal to known coefficients of the DCT.

Abstract: Provided are a latch circuit and a flip-flop circuit each having more excellent tolerance to single event upset (SEU). The single event upset (SEU)-tolerant latch circuit of the present invention is configured such that three transistors for redundancy are added to each of eight transistors constituting a conventional DICE latch circuit, at respective positions consisting of a serial position, a parallel position and a parallel-serial position so as to form a four-transistor circuit in which a serially duplicated circuit is duplicated in parallel, and each of a first data input part and a second data input part is also made dually redundant.

Abstract: An apparatus is described having a latch circuit. The latch circuit includes redundant data inputs, redundant data outputs, redundant clock inputs and circuitry to self-correct a soft-error.

Abstract: Disclosed is a flip-flop (FF) (e.g., a D-type flip-flop (DFF) or a scan flip-flop (SFF)). The FF is configured to reduce dynamic power consumption of an integrated circuit (IC) by employing only a single-phase of a clock signal. Specifically, the FF includes a primary latch and a secondary latch. Each of these latches includes a multi-stage input driver, which internally generates a control signal based on both the single-phase clock signal and an input signal and which also generates a stored bit signal based on the control signal. Each of these latches can also include a feedback path with an inverter that inverts the stored bit signal and a tri-state logic device that generates a feedback signal that is dependent on the inverted stored bit signal, the control signal and the clock signal. As a result, the FF is a fully digital, static, true single-phase clock (TSPC) flip-flop.

Abstract: An apparatus is disclosed that includes a semiconductor device to control a power converter having two or more power FETs. The semiconductor device includes a gate signal generator configured to produce two or more gate signals able to drive the two or more FETs. The gate signal generator has programmable timing configuration parameters to control operation of the two or more gate signals, wherein the timing configuration parameters are digitally programmed via a memory in the semiconductor device. The memory may be implemented with fuses, other non-volatile memory or volatile memory. The parameters may be fixed or updated during a lifetime of the apparatus. A serial-to-parallel conversion may be used to input the parameters. Optimization methods may be performed to determine parameters considered to be optimal. The apparatus may also include the power converter.

Abstract: A level shifting circuit generates a pulse signal, when both of the logic levels of two complementary input signals of a level shifter has changed while both of the logic levels of two output signals of the level shifter present at low logic level, to pull up either one of the output signals of the level shifter to a second high logic level. Once the logic level of both output signals at the first output node and the second output node present complementary, the level shifting circuit stops pulling up the output signal.

Abstract: A level shifter is configured to receive an input signal in a first voltage domain and output an output signal in a second voltage domain. An input terminal is configured to receive an input signal in a first voltage domain. A first sensing circuit is configured to shift the input signal from the first voltage domain to the second voltage domain, and a second sensing circuit is configured to shift the input signal from the first voltage domain to the second voltage domain. An enable circuit is configured to equalize a voltage level of first and second output signals at respective first and second output terminals in response to an enable signal. The first and second sensing circuits are configured output complementary output signals in the second voltage domain at the first and second output terminals in response to the enable signal and the input signal.

Abstract: An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

Abstract: An illustrative digital latch includes: a differential transistor pair (“track pair”) capacitively coupled to a differential input signal to cause a differential output voltage between output nodes to track the differential input signal when a clock signal is asserted; a cross-coupled transistor pair (“latch pair”) coupled to the output nodes to latch the differential output voltage when the clock signal is de-asserted; a differential transistor pair (“clock pair”) that steers a bias current between the track pair and the latch pair; and a matched set of bias transistors that determines the bias current for the clock pair and a reference voltage on a reference voltage node, the reference voltage node being coupled to a base of each transistor in the track pair by equal bias resistances.

Abstract: A power on reset circuit includes a bias current generation module for generating a bias current, a power on reset module for generating a power on reset voltage signal, and a feedback latch module, which are electrically connected in sequence. The power on reset module includes two series switches capable of being turned on or off to adjust the bias current to further adjust the power on reset time. The feedback latch module is used for latching the power on reset voltage signal to restrain the jitter of the power voltage within the input voltage range VIL-VIH of inverters in the power on stage and to avoid jump of the signal. The feedback latch module comprises a feedback branch, which is formed by two NMOS transistors in series connection and achieves rapider and stable output of the power on reset voltage signal through feedback of the signal.

Abstract: A buffer circuit may include first amplifier coupled to a first common node. The buffer circuit may include a second amplifier coupled to the first common node. The voltage level of the first common node may be changed according to a clock signal.

Abstract: A semiconductor apparatus includes a pulse generation circuit which generates a pulse signal in response to a clock, and an amplification circuit which generates an output signal in response to an input signal, the clock, and the pulse signal, wherein the amplification circuit voltage is configured to amplify a voltage level difference between a pair of latch input nodes.

Abstract: A semiconductor apparatus includes a pulse generation circuit which generates a pulse signal in response to a clock, and an amplification circuit which generates an output signal in response to an input signal, the clock, and the pulse signal, wherein the amplification circuit voltage is configured to amplify a voltage level difference between a pair of latch input nodes.

Abstract: A flip-flop circuit includes a first latch, a second latch and a trigger circuit. The first latch is configured to set a first output signal based on a first input signal and a clock signal. The second latch is configured to set a second output signal based on a second input signal and the clock signal. The trigger circuit is coupled with the first latch and the second latch. The trigger circuit is configured to generate the second input signal based on at least the second output signal. The trigger circuit is configured to cause the second input signal to have different voltage swings based on the first output signal and the second output signal. The trigger circuit includes a logic circuit coupled to at least the first latch or the second latch. The logic circuit is configured to output the second output signal.

Abstract: A semiconductor storage device includes, a memory array, a plurality of memory cells provided in rows and columns, and a control circuit for controlling the memory array, each of the memory cells being a static-type memory cell comprising driving transistors, transfer transistors, and load elements.

Abstract: An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gale of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.

Abstract: A circuit for storing data in an integrated circuit is described. The circuit comprises an inverter comprising a first transistor having a first gate configured to receive input data and a first output configured to generate a first inverted data output and a second transistor having a second gate configured to receive the input data and a second output configured to generate a second inverted data output; a first pass gate coupled to the first output of the inverter; a second pass gate coupled to the second output of the inverter; and a storage element having an input coupled to receive an output of the first pass gate and an output of the second pass gate. A method of storing data in an integrated circuit is also described.

Abstract: In a semiconductor memory device, static memory cells are arranged in rows and columns, word lines correspond to respective memory cell rows, and word line drivers drive correspond to word lines. Cell power supply lines correspond to respective memory cell columns and are coupled to cell power supply nodes of a memory cell in a corresponding column. Down power supply lines are arranged corresponding to respective memory cell columns, maintained at ground voltage in data reading and rendered electrically floating in data writing. Write assist elements are arranged corresponding to the cell power supply lines, and according to a write column instruction signal for stopping supply of a cell power supply voltage to the cell power supply line in a selected column, and for coupling the cell power supply line arranged corresponding to the selected column at least to the down power supply line on the corresponding column.

Abstract: A subsystem configured to write data to a static random access memory cell employs a single N-channel MOS device connected to ground in each leg of the bi-stable memory cell to overdrive the stored data. The subsystem implements the dual control required to effect matrix operation of the SRAM cell in the gate circuit of the single N-channel MOS device in the drive path. Specifically, the column select signal controls a semiconductor junction that interrupts the data connection to the gate. In this manner, the column select control is removed from the drive path, thus increasing drive strength. Further, a second semiconductor junction connects the gate of the single NMOS device in the drive path when the gate signal is interrupted.

Abstract: In a semiconductor memory device, static memory cells are arranged in rows and columns, word lines correspond to respective memory cell rows, and word line drivers drive correspond to word lines. Cell power supply lines correspond to respective memory cell columns and are coupled to cell power supply nodes of a memory cell in a corresponding column. Down power supply lines are arranged corresponding to respective memory cell columns, maintained at ground voltage in data reading and rendered electrically floating in data writing. Write assist elements are arranged corresponding to the cell power supply lines, and according to a write column instruction signal for stopping supply of a cell power supply voltage to the cell power supply line in a selected column, and for coupling the cell power supply line arranged corresponding to the selected column at least to the down power supply line on the corresponding column.

Abstract: The present disclosure provides D flip-flops and signal driving methods using D flip-flops thereof. An exemplary D flip-flop includes a pulse signal generating circuit configured to input a first clock signal, a first data signal, a second data signal and a third data signal and generate a clock pulse signal. The clock pulse signal responds a rising-edge and a falling-edge of the first clock signal. The pulse clock signal is a pulse signal when the first data signal is opposite to the second data signal. The D flip-flop also includes a latching circuit configured to sample and transfer the first data signal and a data signal opposite to the first data signal to be used as the second signal and a fourth data signal respectively when the clock signal is at the high level.

Abstract: An electric device, which includes a first switch-unit providing a first internal circuit signal, a first delay circuit unit outputting a second internal circuit signal which is generated by delaying the first internal circuit signal, a first AND logic outputting a first repair-signal generated by a logical AND operation between the first internal circuit signal and the second internal circuit signal, a first OR logic outputting a second repair-signal generated by a logical OR operation between the first internal circuit signal and the second internal circuit signal, and a second switch-unit selecting one of the first repair-signal and the second repair-signal according to a third internal circuit signal generated by an operation including a logical AND operation between the first repair-signal and the second repair-signal and providing the selected one as an output signal through an output terminal, is released.

Abstract: A circuit includes a supply voltage node having a supply voltage value and a node having a node voltage, the node voltage having a node voltage value higher than the supply voltage value. A current generating circuit is coupled between the supply voltage node and the node and is configured to generate a current, and a tracking circuit electrically coupled to the node is configured to selectively supply the current to the node based on the node voltage.

Abstract: A first PMOS transistor is defined by a gate electrode extending along a first gate electrode track. A first NMOS transistor is defined by a gate electrode extending along a second gate electrode track. A second PMOS transistor is defined by a gate electrode extending along the second gate electrode track. A second NMOS transistor is defined by a gate electrode extending along the first gate electrode track. The gate electrodes of the first PMOS transistor and the first NMOS transistor are electrically connected to a first gate node. The gate electrodes of the second PMOS transistor and the second NMOS transistor are electrically connected to a second gate node. Each of the first PMOS transistor, the first NMOS transistor, the second PMOS transistor, and the second NMOS transistor has a respective diffusion terminal electrically connected to a common output node.

Abstract: Embodiments of the present disclosure relate to a flip flop circuit that obviates the need of a transmission gate. The flip flop includes a first match multiplexer, a second match multiplexer and a separable inverter. The first match multiplexer receives an input data signal and generates a feedback output based on the input data signal and the logic levels at two nodes coupled to the first match multiplexer. The separable inverter receives the feedback output and switches the logic level of one of two nodes but maintains the logic level per each clock cycle. The second match multiplexer generates a signal output based on the logic levels at the two nodes and the signal output that is fed back into the second match multiplexer. Embodiments may reduce power consumption and operate at lower voltages.

Abstract: Methods and systems provide a multiplexing cell and a multiplexing cell system for data serialization. The multiplexing cell may be dynamic D-type flip flop having a single phase clock signal (CLK) and a select input (SEL). An input to the multiplexing cell may be passed to an output if CLK is high and SEL are both high. Otherwise, the output of each multiplexing cell may be in a high impedance state. A multiplexing cell system may include one or more of the multiplexing cells and be configured to provide serialization of input data at high data rates with reduced power consumption. Sub-rate clocks, which may be used by at least a portion of a serialization chain, may reduce power consumption allow for less complex clock generation and distribution circuitry. The multiplexing cell and/or multiplexing cell system find application in, among other things, equalization to offset effects of channel imperfections.

Abstract: Systems and methods are disclosed for estimating charge loss in solid-state memory devices using electrical sensors. A data storage device includes a solid-state non-volatile memory comprising a plurality of memory cells, a sensor configured to hold an electric charge, and a controller. The controller is configured to charge the sensor to a first charge level at a first point in time, determine a second charge level of the sensor at a second point in time, after a time period from the first point in time, and refresh data stored in the memory cells based at least in part on the determined second charge level.

Abstract: A buffer includes an amplification circuit, an amplification current generation circuit, and a latch. The amplification circuit may change voltage levels of a first output node and a second output node based on a clock signal and a pair of input signals. The amplification current generation circuit may provide currents having different magnitudes to the first and second output nodes during a first operation period, and may provide currents having the same magnitude to the first and second output nodes during a second operation period. The latch circuit may latch the voltage levels of the first output node and the second output node based on the clock signal.

Abstract: There is provided a semiconductor storage device in which memory cells can easily be set at a proper potential in standby mode, along with a reduction in the area of circuitry for controlling the potential of source lines of memory cells. A semiconductor storage device includes static-type memory cells and a control circuit. The control circuit includes a first switching transistor provided between a source line being coupled to a source electrode of driving transistors and a first voltage, a second switching transistor provided in parallel with the first switching transistor, and a source line potential control circuit which makes the first and second switching transistors conductive to couple the source line to the first voltage, when the memory cells are operating, and sets the first switching transistor non-conductive and sets a gate electrode of the second switching transistor coupled to the source line in standby mode.

Abstract: Provided are a driving unit for a touch electrode, a driving circuit, a touch panel and a driving method, wherein the driving unit comprises: a signal conversion unit configured to convert a signal input from the signal input terminal under the control of a clock signal and output the conversion result; a logic computation unit configured to perform a logic computation on the input signal and the touch enable signal and output the computation result; a buffer unit connected to an output terminal of the logic computation unit; and an output unit connected to an output terminal of the buffer unit and configured to output a touch scan signal to the touch driving electrode under the control of a signal output by the buffer unit. The driving circuit comprising multiple stages of driving unit described in the above can be directly integrated in the array substrate.

Abstract: A device includes a first and second inverters each having a signal input, signal output, high voltage supply terminal, and low voltage supply terminal. The signal input of the first inverter is coupled to the signal output of the second inverter, and the signal input of the second inverter is coupled to the signal output of the first inverter. A first transistor has a first conduction terminal coupled to a power supply node, a second conduction terminal coupled to the high voltage supply terminal of the first inverter, and a control terminal coupled to a first node. A second transistor has a first conduction terminal coupled to the power supply node, a second conduction terminal coupled to the high voltage supply terminal of the second inverter, and a control terminal coupled to a second node. First and second bit lines are capacitively coupled to the first and second nodes.

Abstract: A sense amplifier includes a cross latch, a first pass gate, a second pass gate, a first data line, a second data line, a first circuit, and a second circuit. The cross latch has a first input/output (I/O) node and a second I/O node. The first pass gate is coupled between the first data line and the first I/O node. The second pass gate is coupled between the second data line and the second I/O node. The first circuit is coupled with the first I/O node and the second data line. The second circuit is coupled with the second I/O node and the first data line. The first circuit is configured to be turned off when the second data line has a first logical value and to be at least lightly turned on when the second data line has a voltage level between the first logical value and a second logical value different from the first logical value.

Abstract: Methods and devices for providing unclonable chip identification are provided. An integrated circuit device includes: a first transistor having a first gate oxide thickness; a second transistor having a second gate oxide thickness different than the first gate oxide thickness; and a reading circuit connected to the first transistor and the second transistor, wherein the reading circuit reads a difference in threshold voltage between the first transistor and the second transistor.

Abstract: To generate an analog current without restriction by a power supply voltage. A semiconductor device includes a first node, a second node, a first- to an n-th-stage power storage element (n is an integer greater than or equal to 2), and a first- to an n-th-stage switch. The capacities of the first- to the n-th-stage power storage element are different from one another. The first- to the n-th-stage power storage element are electrically connected in parallel between the first node and the second node. A first terminal of a k-th stage power storage element (k is an integer greater than or equal to 1 and less than or equal to n) is electrically connected to the first input node via a k-th stage switch. The on/off states of the first- to the n-th-stage switch are controlled by a first to an n-th signal.

Abstract: An interface circuit receives an input signal IN having a first voltage amplitude from a first circuit, and outputs an output signal OUT having a second voltage amplitude to a second circuit. A level shifter comprises a first CMOS inverter and a second CMOS inverter which are cross-coupled, and a current limiting circuit that limits a current that flows through the first CMOS inverter and the second CMOS inverter, and converts the input signal IN into an intermediate signal INT which is a differential signal. A latch circuit receives the intermediate signal INT from the level shifter, and switches its state according to the positive signal and the negative signal of the intermediate signal INT.

Abstract: A flip-flop circuit includes a first latch, a second latch, and a trigger stage. The first latch is configured to set a first latch output signal based on a first latch input signal and a clock signal. The second latch is configured to set a second latch output signal based on a second latch input signal and the clock signal. The trigger stage is configured to generate the second latch input signal based on the first latch output signal. The trigger stage is configured to cause the second input signal to have different voltage swings based on the first latch output signal and the second latch output signal.

Abstract: An integrated circuit (IC) is disclosed herein for accelerating memory access with an output latch. In an example aspect, the output latch includes a data storage unit, first circuitry, and second circuitry. The data storage unit includes a first input node configured to receive a first input voltage, a second input node configured to receive a second input voltage, a first output node configured to provide a first output voltage, and a second output node configured to provide a second output voltage. The first circuitry is configured to accelerate a voltage level transition of the first output voltage at the first output node responsive to the first input voltage at the first input node. The second circuitry is configured to accelerate a voltage level transition of the second output voltage at the second output node responsive to the second input voltage at the second input node.

Abstract: A memory cell for use within a memory array includes a memory circuit and a read circuit. The memory circuit includes a non-volatile memory element (for example, a floating gate transistor) coupled to an RS flip flop. The RS flip flop is configured with a p-channel transistor coupled to receive a first enable signal and an n-channel transistor coupled to receive a second enable signal. The assertion of the enable signals is offset in time to control operations for forcing latch nodes to a specific voltage and enabling latching operation. The read circuit includes latch circuit coupled to outputs of the RS flip flop and operable as a sense amplifier circuit. The memory and read circuits are fabricated within a rectangular circuit area. Many such rectangular circuit area may be positioned adjacent to each other in a row or column of the memory array.

Abstract: According to one embodiment, a semiconductor memory device includes a source voltage adjustment circuit and a word line voltage adjustment circuit, which are configured to respectively supply a source voltage supply end and a word line switchingly with voltage-adjusted voltages, in response to a mode switching signal for switching between a retention state mode and an active state mode, wherein the source voltage supply end is connected to sources of MOS transistors forming a flip-flop of a memory cell, and the word line is connected to gates of access transistors.

Abstract: A method for manufacturing a digital circuit is described comprising forming two field effect transistors, connecting the field effect transistors such that an output signal of the digital circuit in response to a predetermined input has an undefined logic state when the threshold voltages of the field effect transistors are equal and setting the threshold voltages of at least one of the field effect transistors such that the output signal of the digital circuit in response to the predetermined input has a predetermined defined logic state.

Abstract: Circuits for generating voltage references are common in electronics. For example, these circuits are used in analog-to-digital converters, which convert an analog signal into its digital representation by comparing analog input signals against one or more voltage references provided by those circuits. In many applications, the speed and accuracy of such voltage references are very important. The speed of the voltage references is related to the physical properties of the devices in the circuit. The accuracy of the voltage reference is directly related to the circuit's ability to trim the full-scale voltage output. The present disclosure describes a fast and efficient reference buffer with a wide trim range which is particular suitable for submicron processes and high speed applications. The reference buffer comprises a plurality of diode-connected transistors, which can be selected to turn on or off using a controller to provide a wide trim range.

Abstract: A subsystem configured to write data to a static random access memory cell employs a single N-channel MOS device connected to ground in each leg of the bi-stable memory cell to overdrive the stored data. The subsystem implements the dual control required to effect matrix operation of the SRAM cell in the gate circuit of the single N-channel MOS device in the drive path. Specifically, the column select signal controls a semiconductor junction that interrupts the data connection to the gate. In this manner, the column select control is removed from the drive path, thus increasing drive strength. Further, a second semiconductor junction connects the gate of the single NMOS device in the drive path when the gate signal is interrupted.

Abstract: A particular method includes receiving a retention signal. In response to receiving the retention signal, the method includes retaining state information in a non-volatile stage of a retention register and reducing power to a volatile stage of the retention register. The non-volatile stage may be powered by an external voltage source. The volatile stage may be powered by an internal voltage source.

Abstract: A latch circuit has a tri-state gate and a reverse tri-state gate that share the same complementary controls. The reverse tri-state gate locks an output of the tri-state gate when the tri-state gate is shut-off. The complementary control signals include a first undoped polysilicon strip. The output of the reverse tri-state gate may be coupled to the output of the tri-state gate via a second undoped polysilicon strip.

Abstract: A sense amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first resistive device, and a second resistive device. The first resistive device is coupled to a first data line and to a drain of the third transistor. The second resistive device is coupled to a second data line and to a drain of the fourth transistor. A terminal of the fifth transistor is coupled to the gate of the first transistor. A terminal of the sixth transistor is coupled to the gate of the second transistor.

Abstract: A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area.

Abstract: A high-speed and low power divider includes a ring of four dynamic latches, an interlocking circuit, and four output inverters. Each latch has a first dynamic node M and a second dynamic node N. The interlocking circuit is coupled to the M nodes. Based on one or more of the M node signals received, the interlocking circuit selectively controls the logic values on one or more of the M modes such that over time, as the divider is clocked, only one of the signals on the N nodes is low at a given time. The output inverters generate inverted versions of the N node signals that are output from the divider as low phase noise 25% duty cycle output signals I, IB, Q and QB. In one specific example, each latch has eight transistors and no more than eight transistors. The divider recovers quickly and automatically from erroneous state disturbances.

Abstract: Signal value storage circuitry 2 is provided which includes a first transistor stack, a second transistor stack and a third transistor stack. The signal value storage circuitry is controlled by a single clock signal. Keeper transistors and isolation transistors serve to permit static operation of the signal value storage circuitry (i.e. the clock signal may be stopped without losing state) and to prevent contention within the circuitry.