Abstract: A circuit for recovering charge at the gate of an output transistor arranged to drive the output of a switching circuit such as a switching regulator or controller. A substantial portion of the charge for each switching cycle is recovered under a wide range of load conditions for the switching circuit, e.g., no load, partial load, or full load. Also, charge recovery operates effectively with a switching circuit that is arranged to switch in a synchronous or asynchronous manner. Additionally, if the output voltage of a switching circuit is 12 or more volts, the amount of charge that can be saved can be relatively substantial.

Abstract: Circuits, methods, and apparatus that provide bootstrapped switches having improved reliability. One example improves the reliability of a discharge transistor connected to discharge the gate of a switch transistor by decreasing its operating voltage during the discharge. This example provides a discharge transistor having a first source-drain region connected to a gate of a switch transistor. Since the gate of the switch transistor can reach high voltages, if the discharge transistor's second source-drain region is instantaneously tied to ground when the switch's gate is discharged, the discharge transistor's reliability can be degraded due to hot-electron effects. Accordingly, instead of being connected to ground—or an intermediate node that quickly reaches the ground potential during gate discharge—the second source-drain region of the discharge transistor is coupled to an intermediate node that discharges to ground at a slower rate.

Abstract: This disclosure relates to a compensating for nonlinearity resulting from a capacitance feedback in current cells of a single ended digital to analog circuit.

Abstract: A logic assembly (400) is composed from circuit elements of a single threshold and single conductivity type and comprises a logic circuitry (410) having at least a set of switches each having a main current path and a control terminal. The main current path forms a series arrangement having first and second conducting terminals coupled to power supply lines. The main current paths being coupled to a common node that forms an output of logic assembly (400). The control terminals of said switches being coupled to clock circuitry for providing mutually non-overlapping clock signals to said control terminal. The logic assembly further comprises an output boosting circuit (420) for boosting the output of said logic assembly (400) including a capacitive means (421) for enabling supply of additional charge to the output of said logic assembly (400).

Abstract: A clock control circuit is provided. The clock control circuit includes a voltage supplier for supplying a first voltage in response to a first clock signal, a voltage booster for boosting the first voltage in response to the first clock signal input to the voltage booster, and a clock generator for generating a second clock signal having a voltage level equal to the boosted first voltage in response to the first clock signal.

Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

Abstract: An apparatus and method for improving the performance of an electronic device is disclosed. An idle voltage state is introduced by an adaptive voltage generator when providing or removing a high voltage signal from a line or a node in a circuit. The idle state reduces the undesirable effects of switching disturbances caused by sudden voltage changes in a line or node.

Abstract: A circuit for optimizing charging of a bootstrap capacitor connected to a high side floating supply voltage at a first terminal and to a switched node voltage at a second terminal, the circuit for optimizing being included in a gate driver circuit having high- and low-side driver circuits for driving high- and low-side switches connected at the switched node in a half bridge to provide current to a load, the high-side driver circuit receiving a first control voltage referenced to a first level and the low-side driver circuit receiving a second control voltage referenced to a second level, the bootstrap capacitor providing the high-side floating supply voltage for the high-side driver circuit, the optimizing circuit comprising a bootstrap diode emulator circuit comprising a bootstrap diode emulator driver circuit driving a first switch, the first switch connected between the first terminal of the bootstrap capacitor and a supply voltage for the low side driver circuit; and a phase sense comparator circuit resp

Abstract: Circuit and method for a gate control output circuit having reduced voltage stress on the devices is disclosed. In a circuit of MOS transistors for supplying an output to control a transfer gate, the output having a high voltage level that exceeds a supply voltage, first and second clamping circuits are provided. The first clamping circuit ensures a voltage between the gate and the source/drain and drain/source of a PMOS transistor that couples a pumped voltage to the output does not exceed a predetermined voltage. The second clamping circuit ensures that the voltage between the gate of an NMOS transistor and the output which is coupled to the drain/source of the NMOS transistor does not exceed a predetermined amount. The clamping circuits prevent gate stress problems on the transistors by ensuring the voltages between the gates and the source/drain and drain/source terminals do not exceed predetermined voltages.

Abstract: There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node ? into a floating state. When the node ? is in the floating state, a potential of the node ? is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

Abstract: Disclosed herein is a bootstrap circuit configured to employ first, second and third transistors of the same conduction type wherein: a node section connecting a gate electrode of the first transistor and a specific one of the source and drain areas of a third transistor to each other is put in a floating state when the third transistor is put in a turned-off state; a gate electrode of the second transistor is connected to a clock supply line which conveys the other one of the two clock signals; and a voltage-variation repression capacitor is provided between the node section and a first voltage supply line.

Abstract: One embodiment of the present invention provides a system that facilitates proximity communication. This system includes a circuit containing a bootstrap transistor and a pass-gate transistor, where the drain of the bootstrap transistor is coupled to the gate of the pass-gate transistor. Note that a first coupling capacitance exists between the source of the pass-gate transistor and the drain of the bootstrap transistor and a second coupling capacitance exists between the drain of the pass-gate transistor and the drain of the bootstrap transistor. During operation, the gate and the source of the bootstrap transistor are coupled to a high voltage, thereby causing an intermediate voltage at the drain of the bootstrap transistor.

Abstract: A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.

Abstract: The invention provides a bootstrap circuit which enables adequate charging of a capacitor used in the bootstrap circuit even during light load or no load conditions, and which does not impede the performance of a step-down converter proper, as well as a step-down converter using the bootstrap circuit. A capacitor charge/discharge path formation mechanism is provided in the bootstrap circuit that enables a terminal of a capacitor used in the bootstrap circuit to be separated and made independent from a step-down converter circuit.

Abstract: A semiconductor circuit apparatus includes a booster which is connected to a single power supply and outputs a power supply voltage of the power supply or a voltage different from the power supply voltage, and a boost controller which controls whether to output the power supply voltage of the power supply or the voltage different from the power supply voltage.

Abstract: A bootstrap circuit includes an output transistor, a bootstrap capacitor provided between the gate and source of the output transistor, a power source, and a circuit that performs ON/OFF control of a supply from the power source to the gate electrode of the transistor. An initial voltage before a bootstrap effect can be set to the potential of the power source, which is independent of the threshold voltage of the transistor. Therefore, the source output of the transistor rising or dropping due to the bootstrap effect is not affected by variations that depend on the threshold voltage of the transistor.

Abstract: A clamping circuit of a DC/DC regulator includes a reference current generator to generate a reference current. The reference current can be based upon a specified maximum voltage across a bootstrap capacitor of the DC/DC regulator. The clamping circuit also includes a current generator that generates a current based on the voltage across the bootstrap capacitor. The current generated by the current generator is compared to the generated reference current. Based on the comparison, the voltage across the bootstrap capacitor is regulated. By regulating the voltage across the bootstrap capacitor based on current, rather than based directly on the voltage across the capacitor, the design of the clamping circuit is simplified compared to voltage-based implementations.

Abstract: Provided is an electronic device capable of completely interrupting a power source and an electronic circuit when the electronic circuit is not being operated, and reducing power consumed wastefully. In the electronic device including the power source, a switch, and the electronic circuit, the power source and the electronic circuit are electrically interrupted by the switch when the electronic circuit is not being operated. The electronic device further includes a power generation source for converting environmental energy into electric energy, and a switch control circuit driven by the power generation source.

Abstract: A voltage level shifting device includes an activation or deactivation control input, first and second output nodes, a capacitor coupled between the output nodes, a high-voltage transistor for charging the capacitor, a high-voltage transistor for discharging the capacitor, a comparator which generates a charge blocking signal and a discharge signal, and a control device which is operative to cause the charging transistor to be blocked when a charge blocking signal is generated and to turn on the discharging transistor upon receipt of a deactivation control signal and when a discharge signal is generated.

Abstract: A circuit includes a transistor having a source, drain, a gate, and an electrode structure. A source terminal is coupled to the source. A drain terminal coupled to the drain. Terminals are coupled to the gate and to the electrode structure. A switch is coupled to the source, the gate terminal and the electrode terminal to selectively couple one of the gate and electrode structure to the source. In further embodiments, a second switch is used to selectively couple a resistor between the gate and the source. A method is used to control the switches to keep the transistor in an off state or allow it to switch to an on state.

Abstract: Provided are a charge transfer switch circuit for selectively controlling body bias voltage of a charge transfer device, and a boosted voltage generating circuit having the same. The charge transfer switch circuit may include a capacitor whose voltage is boosted based on first and second control signals, a first transistor connected between a supply voltage and the capacitor and having a gate receiving a precharge signal, a second transistor connected between a first node and a second node and having a gate connected to a terminal of the capacitor, a third transistor connected between the first node and a bulk voltage of the second transistor and having a gate receiving the first control signal, and a fourth transistor connected between the bulk voltage of the second transistor and a ground voltage and having a gate receiving the second control signal.

Abstract: According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.

Abstract: A multiplexer circuit provided herein includes a plurality of pass devices coupled in parallel between a power supply and a ground supply. According to one embodiment, each pass device may include a first pair of transistors, which is coupled in series between the power supply and the ground supply, and a second pair of transistors, which is coupled to the first pair of transistors for controlling a current passed there through. In general, the second pair of transistors may be configured for increasing the amount of current passed through the first pair of transistors. For example, the second pair of transistors may utilize a bootstrapping effect to increase a pair of control voltages supplied to the gate terminals of the first pair of transistors. The increased control voltages function to over-drive the gate terminals of the first pair of transistors, thereby increasing the amount of current passed there through.

Abstract: An integrated circuit having a bootstrap charger for using in a switching mode power supply is disclosed. In one embodiment, a capacitor is connected between a floating terminal and a bootstrap supply terminal with a voltage drop over the capacitor, a comparing device with a first input terminal receiving a fraction of the voltage drop, a second input terminal receiving a reference, and an output terminal providing a control signal, and a charge circuit configured to charge the capacitor dependent on the control signal.

Abstract: A floating gate drive circuit is revealed that provides boot strap gate drive energy for floating switches with reference terminals that swing between two non-zero dc voltages.

Abstract: A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar transistor to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch.

Abstract: A high-side semiconductor switch control circuit for switching a positive supply voltage is provided, having a circuit to provide a drive voltage for the high-side semiconductor switch, a driver circuit for driving the high-side semiconductor switch based on the control circuit, wherein both the circuit for providing the drive voltage as well as the driver circuit operate in relation to a floating switching point, an input circuit portion that receives a control signal related to ground, and a level shift circuit portion that is connected between the input circuit portion and the driver circuit portion and set up so as to transform the control signal related to ground into a floating voltage level for the driver circuit portion.

Abstract: A circuit including a voltage boost circuit coupled to a first node and a second node, and configured to apply a boosted first node voltage to the second node; and an inverter circuit coupled to the first node, the second node, and a third node, and configured to generate a signal on the third node in response to the signals on the first node and the second node.

Abstract: A circuit for optimizing charging of a bootstrap capacitor connected to a high side floating supply voltage at a first terminal and to a switched node voltage at a second terminal, the circuit for optimizing being included in a gate driver circuit having a high-and a low-side driver circuits for driving high- and low-side switches connected at a switched node in a half bridge to provide current to a load, the high-side driver circuit receiving a first control voltage referenced to a first level and a low-side driver circuit receiving a second control voltage referenced to a second level, the bootstrap capacitor providing supply voltage for the high-side driver circuit.

Abstract: A delay locked loop (DLL) having a charge pump gain independent of the operating frequency of the DLL. A method for providing a constant gain for a charge pump component of a delay locked loop (DLL) is disclosed, and includes: providing a switched capacitor stage responsive to a charge phase for charging a capacitor and a dump phase for dumping the capacitor; and aligning the charge phase and the dump phase such that a control voltage provided by the charge pump is independent of a frequency of a DLL charge and discharge phase.

Abstract: A wireless device includes high-performance CMOS RF switches that include serially connected transistors coupled between an input terminal and an output terminal, with an inductor coupled from the input to the output that resonates out the capacitance of the transistors to improve isolation. The transistors have a floating/bootstrapped body with remote body contacts.

Abstract: A bootstrapping circuit capable of sampling input signals beyond a supply voltage is disclosed. In one embodiment, the bootstrapped circuit is implemented having a reduced area and/or power consumption requirement.

Abstract: A bootstrapped circuit for sampling inputs with a signal range greater than supply voltage includes: a bootstrapped switch coupled between an input node and an output node; a first transistor coupled to a control node of the bootstrapped switch; a first capacitor having a first end coupled to the first transistor; a second transistor coupled between the first transistor and a supply node, and having a control node coupled to a first clock signal node; a third transistor coupled between the first transistor and the supply node; a charge pump having an output coupled to a control node of the third transistor; a level shifter coupled to a second end of the first capacitor; a fourth transistor coupled between the supply node and a control node of the first transistor; and a fifth transistor coupled between the control node of the fourth transistor and the output of the charge pump and, having a control node coupled to the supply node; wherein the second end of the first capacitor can be charged to an input voltag

Abstract: A semiconductor device includes a differential level converter circuit that receives a first signal and outputs a second signal of greater amplitude. The differential level converter has a first MISFET pair for receiving the first signal, a second MISFET pair for enhancing the withstand voltage of the first MISFET pair, and a third MISFET pair with cross-coupled gates for latching the second signal from output. The film thickness of the gate insulating films of the second and third MISFET pairs is made thicker than that of the first MISFET pair, and the threshold voltages of the first and second MISFET pairs are made smaller than that of the third MISFET pair. This level converter circuit operates at high speed even if there is a large difference in the signal amplitude before and after level conversion.

Abstract: An integrated circuit having a bootstrap charger for using in a switching mode power supply is disclosed. In one embodiment, a capacitor is connected between a floating terminal and a bootstrap supply terminal with a voltage drop over the capacitor, a comparing device with a first input terminal receiving a fraction of the voltage drop, a second input terminal receiving a reference, and an output terminal providing a control signal, and a charge circuit configured to charge the capacitor dependent on the control signal.

Abstract: A booster circuit includes a first booster unit having a first output terminal from which a boosted voltage is output. The first output terminal is connected to an external output terminal. A second booster unit has a second output terminal from which a boosted voltage is output. The second output terminal is connected to the external output terminal. A control circuit outputs a first control signal used to control the operation of the first booster unit and a second control signal used to control the operation of the second booster unit. Further, the control circuit controls the first and second control signals so that a transition between the operative state and the non-operative state of the first booster unit and a transition between the operative state and the non-operative state of the second booster unit will be made at different timings according to output voltage of the external output terminal.

Abstract: A source follower in which any one of the following three modes is selected by a plurality of switching elements: a first mode in which a first potential is supplied to a gate of a transistor and an input potential is supplied to a first electrode of a capacitor respectively and a second electrode of the capacitor and a source of the transistor are connected, a second mode in which an input potential is supplied to the first electrode and the gate of the transistor and the second electrode floats, and a third mode in which the first electrode and the gate of the transistor are connected and a potential thereof floats and a second potential is supplied to the second electrode, a drain of the transistor is supplied with a third potential, and a potential of the source of the transistor is supplied to a subsequent circuit.

Abstract: A technique implements high impedance nodes using high threshold voltage devices that may generate less leakage current and may have a higher gate oxide breakdown voltage than standard devices in a particular manufacturing technology. Under at least one operating condition, for a particular power supply voltage, a circuit may be unable to produce a control signal that is sufficient to turn on such a high threshold voltage device. The technique adjusts the control signal voltage to provide a gate-to-source voltage sufficient to turn on the high threshold voltage device. At another power supply voltage, when the circuit is able to produce a control signal sufficient to turn on the high threshold voltage device, the technique does not adjust the control signal.

Abstract: A delay looked loop (DLL) having a charge pump gain independent of the operating frequency of the DLL.

Abstract: The present invention is related to a negative voltage generating circuit for reliably providing the semiconductor integrated circuit (IC) with a negative voltage. An electric charge pumping device generates a negative voltage by pumping an electric charge to a predetermined level supplied to one of a first node and a second node. A controlling device provides first and second pumping clock signal being clocked alternately every predetermined interval in response to a level of the negative voltage. A pumping controller controls an amount of electric charge supplied to the first node and the second node in response to the first and second pumping clock signals. Further, a reset controller resets the first node and the second node of the electric charge pumping means as the level of the negative voltage when the first and second pumping clock signals are inactivated.

Abstract: A method and apparatus for boosting the gate voltages of a CMOS switch used in an integrated circuit designed in a sub-micron CMOS process is disclosed. The CMOS switch is coupled to Vin and Vout nodes, and contains PMOS and NMOS gates. Two boosting circuits are used to change the voltage on the PMOS and NMOS gates, respectively. The voltage at the NMOS gate is boosted from VDD to (VDD+K×VDD). The voltage at the PMOS gate is decreased from VGND to (VGND?k×VGND). The factor k is chosen such that Vout can be sampled through the entire range of Vin=VGND to VDD, even where VDD approaches the sum of the absolute values of the threshold voltages of the respective PMOS and NMOS transistors.

Abstract: A boost converter with a flying capacitor topology is provided. The flying capacitor is charged during a first half of a cycle. During a second half of the cycle, the output voltage of the boost converter is supplied from Vdd until the output voltage approximately reaches Vdd. At that point, the flying capacitor is used to provide the output voltage.

Abstract: The bootstrapping circuit capable of sampling inputs beyond supply voltage includes: a bootstrapped switch MN20 coupled between an input node and an output node; a first transistor MP13 having a first end coupled to a control node of the bootstrapped switch MN20; a clock bootstrapped capacitor C13 having a first end coupled to a second end of the first transistor MP13; a second transistor MN27 coupled between the first end of the first transistor MP13 and a supply node, and having a control node coupled to a first clock signal node PHI; a third transistor MN26 coupled between the second end of the first transistor MP13 and the supply node; a charge pump having a first output coupled to a control node of the third transistor MN26; a level shifter having a first output coupled to a second end of the clock bootstrapped capacitor C13; a fourth transistor MN25 coupled between the supply node and a control node of the first transistor MP13, and having a control node coupled to a second output of the charge pump; a

Abstract: The invention is a method and apparatus for supplying both positive and negative gate drive power supply potentials to the top switch, in a typical half-bridge semiconductor power topology, from the bottom switch gate drive power supplies and without the use of transformer, capacitive or optical isolation. A known method of providing the positive top switch gate drive supply is enhanced and used in conjunction with a new and novel method for providing the negative top switch gate drive supply. The negative top switch gate drive supply is provided by an additional, lower power semiconductor switch, which is substantially synchronized with the bottom semiconductor switch, except for a slight turn-on delay. When this additional switch is gated “on” and conducting, the negative bottom switch gate drive power is connected to the negative top switch gate drive supply energy storage capacitors.

Abstract: A charge pump circuit is provided which outputs a high voltage by using a boosting circuit with a smaller number of stages. A diode is used to give a back-gate voltage for a MOS transistor composing the charge pump circuit, thereby minimizing a reduction in a boosted voltage due to an increase in the threshold voltage of the MOS transistor. In addition, a second MOS transistor is provided between the back gate of the MOS transistor and the ground (GND) such that in-phase clock signals are inputted to the gate of the second MOS transistor and the capacitor thereof.

Abstract: A power supply reset boosting element which boosts a level of the reset voltage to a level higher than the level of the power supply. The boosted voltage is isolated from both the power supply and from undesired switching by special transistors which can withstand the voltage power supply level.

Abstract: A charge pump is proposed. The charge pump is integrated in a chip of semiconductor material and includes a plurality of capacitive elements each one connected to a corresponding circuit node of the charge pump, the circuit nodes being arranged in a sequence from an input node to an output node, a plurality of field effect transistors each one for selectively connecting a corresponding first circuit node with a second adjacent circuit node, each transistor being made in a corresponding insulated body region, and for each transistor first biasing means for equalizing the body region with the first circuit node when the transistor is closed, wherein for each transistor the charge pump further includes second biasing means for equalizing the body region with the second circuit node when the transistor is opened.

Abstract: A circuit for generating word line control signals that have a stable boosting margin of the sub-word line driver: The circuit includes a first address buffer, a pre-decoder unit, a second address buffer, a main decoder and a circuit for generating a word-line boosting signal. The second address buffer delays a refresh count signal for a predetermined time and generates an enable signal having a predetermined pulse width in response to a row address setup signal and the delayed refresh count signal, and receives and latches a pre-decoded row address signals to output decoded row address signals in response to the enable signal. Accordingly, the circuit for generating word line control signals is capable of obtaining a stable self-boosting margin when the semiconductor memory device operates in a refresh mode.

Abstract: The high-side transistor driver according to the present invention includes a high-side transistor, a low-side transistor, a drive-buffer and an on/off transistor. When the low-side transistor is turned on, a charge-pump diode and a bootstrap capacitor produce a floating voltage. The drive-buffer will propagate the floating voltage to switch on the high-side transistor. The on/off transistor is used to switch the drive-buffer. The high-side transistor drive further includes a speed-up circuit. The speed-up circuit has a capacitive coupling for generating a differential signal. When the on/off transistor is turned off, the speed-up circuit accelerates the charge-up of the parasitic capacitor of the on/off transistor, thus accelerating high-side transistor switching.

Abstract: A circuit with a large load driving capability, which is structured by single polarity TFTs, is provided. With a capacitor (154) formed between a gate electrode and an output electrode of a TFT (152), the electric potential of the gate electrode of the TFT (152) is increased by a boot strap and normal output with respect to an input signal is obtained without amplitude attenuation of an output signal due to the TFT threshold value. In addition, a capacitor (155) formed between a gate electrode and an output electrode of a TFT (153) compensates for increasing the electric potential of the gate electrode of the TFT (152), and a larger load driving capability is obtained.