Abstract: A semiconductor device (100) of the present invention has a structure in which an interlayer insulating layer (115) is formed on an uppermost wire (114), contacts (116, 117) penetrate the interlayer insulating layer (115), a lower electrode (118a) of the resistance variable element is formed on the interlayer insulating layer (115) to cover the contact (116), and resistance variable layer (119) is formed on the interlayer insulating layer (115) to cover the lower electrode (118a) and the contact (117). The contact (116) and the lower electrode (118a) serve as a first terminal, while the contact (117) serves as a second terminal.

Abstract: In one embodiment, a integrated circuit (IC) configurable to have any one of a plurality of different feature sets, the IC including (a) one or more feature blocks adapted to be independently enabled or disabled, (b) a one-time-programmable (OTP) memory cell for each feature block, the OTP memory cell storing a value, and (c) a feature control module for each feature block, each feature control module connected between the corresponding OTP memory cell and the corresponding feature block, and adapted to enable or disable the corresponding feature block based on the value stored in the corresponding OTP memory cell. The OTP memory cells are programmed by a vendor to select the particular feature set for the IC which is to be available to a purchaser.

Abstract: A fuse circuit may include a fuse section which generates a fuse control signal at an output terminal of the fuse circuit in response to a power-up signal according to a status of a fuse in the fuse section; and a current path break section which detects the status of the fuse in the fuse section prior to a trip period of the power-up signal and breaks an inrush current path created in the fuse section during the trip period based on the detected status.

Abstract: A semiconductor integrated circuit has a voltage supply terminal; a first input terminal fed with a first input signal; an output terminal that outputs an output signal; a second input terminal fed with a second input signal; a first MOS transistor having one end connected to the voltage supply terminal and a gate electrode connected to the first input terminal; a second MOS transistor having one end connected to a first potential, an other end connected to the output terminal, and a gate electrode connected to the second input terminal; and a program element acting as a MOS transistor having one end connected to the other end of the second MOS transistor and an other end connected to a second potential higher than the first potential.

Abstract: A fuse circuit of a semiconductor device includes a plurality of fuse set units configured to compare an input address with address information programmed according to a fuse cutting state and a test control unit configured to enable one or more fuse set units selected based on a number of times that a selection signal is enabled in a test mode.

Abstract: A fuse circuit or a redundancy circuit is capable of detecting a fuse with a crack. The fuse circuit includes a fuse block configured to drive an output node through a current path including a fuse in response to a fuse enable signal, and a voltage detection block configured to detect a voltage level of the output node based on a critical voltage adjusted according to a test mode signal, thereby generating a fuse condition signal.

Abstract: A fuse circuit includes a fuse unit configured to form a current path on a first node according to whether or not a fuse is cut; a driving current controller configured to control a potential level of the first node in response to a test signal; and an output unit configured to output a fuse state signal in response to the potential level of the first node.

Abstract: E-fuses in an E-fuse memory array are programmed by applying a first programming pulse to a plurality of E-fuses to program the plurality of E-fuses to a first state; and then applying a second programming pulse to at least a selected E-fuse in the plurality of E-fuses to program the selected E-fuse to a second state.

Abstract: A fuse circuit includes a fuse having an intact state and a blown state. The fuse can be switched to the blown state by enabling a blowing current to flow through the fuse. The fuse is coupled between a first transistor and a second transistor in series. The first transistor and the second transistor are complementary transistors and operable for reducing an electrostatic discharge current flowing through the fuse. The first transistor and the second transistor are turned on to enable the blowing current to flow through the fuse.

Abstract: A fuse circuit of a semiconductor integrated apparatus includes first and second fuse blocks. The first fuse block includes a first up fuse block where a first plurality of fuses are arranged and a first down fuse block where a second plurality of fuses are arranged. The second plurality of fuses comprises fewer fuses than the first plurality of fuses. The second fuse block includes a second up fuse block where a third plurality of fuses are arranged, the third plurality of fuses comprising the same number of fuses as the second plurality of fuses, and a second down fuse block that includes a fourth plurality of fuses, the fourth plurality of fuses comprising the same number of fuses as the first plurality of fuses. The first up fuse block is opposite the second up fuse block and the first down fuse block is opposite the second down fuse block.

Abstract: Programmable fuse-type through silicon vias (TSVs) in silicon chips are provided with non-programmable TSVs in the same chip. The programmable fuse-type TSVs may employ a region within the TSV structure having sidewall spacers that restrict the cross-sectional conductive path of the TSV adjacent a chip surface contact pad. Application of sufficient current by programming circuitry causes electromigration of metal to create a void in the contact pad and, thus, an open circuit. Programming may be carried out by complementary circuitry on two adjacent chips in a multi-story chip stack.

Abstract: An electric fuse cutoff control circuit controlling cutoff of a plurality of electric fuses including: a cutoff information storage circuit adapted to store cutoff information about whether or not each of the plurality of electric fuses is cut off; a cutoff information control circuit controlling the cutoff of the plurality of electric fuses based on an output signal of the cutoff information storage circuit; and a cutoff information renewal circuit receiving an output signal of the cutoff information control circuit and renewing the cutoff information set for the cutoff information storage circuit.

Abstract: Programmable anti-fuse circuitry including at least one anti-fuse cell having a first anti-fuse device coupled between a supply voltage and a first node and a second anti-fuse device coupled between the first node and a ground voltage, and control logic coupled to the first node and arranged to generate a programming voltage having one of at least a first voltage level for breaking-down the first anti-fuse device but not the second anti-fuse device and coupling the first node to the supply voltage; and a second voltage level for breaking-down the second anti-fuse device but not the first anti-fuse device and coupling the first node to the ground voltage.

Abstract: Provided may be a multi-level anti-fuse and methods of fabricating and operating the same. The multi-level anti-fuse may include at least three anti-fuses having a plurality of anti-fuses connected in parallel constituting a parallel connection structure and at least one anti-fuse connected to the parallel connection structure in series, wherein the parallel connection structure may have a smaller resistance than the resistance of the anti-fuse connected in series, the plurality of anti-fuses connected in parallel may include dielectric layers having different thicknesses from one another, and the breakdown voltages of each dielectric layer may be different from one another.

Abstract: A first terminal and a second terminal of a FinFET transistor are used as two terminals of an anti-fuse. To program the anti-fuse, a gate of the FinFET transistor is controlled, and a voltage having a predetermined amplitude and a predetermined duration is applied to the first terminal to cause the first terminal to be electrically shorted to the second terminal.

Abstract: The invention relates to a semiconductor device comprising a fuse that is implemented as a bar type pattern that forms a straight line instead of a pattern that is difficult to secure a manufacturing margin. A fuse block including a plurality of fuses comprises a plurality of first connection parts, each including a blowing area, a plurality of second connection parts, wherein the plurality of the second connection parts and the plurality of the corresponding first connection parts respectively form part of the fuse, and a common connection unit configured to electrically connect the plurality of the first connection parts and the plurality of the second connection parts.

Abstract: An electrical fuse determination circuit that can speedily and reliably incorporate an electrical fuse data and improve a reliability of electrical fuse device, includes a first electrical fuse device of which one end connects with a higher voltage, a second electrical fuse device of which one end connects with a lower voltage, a set portion that puts one of the first electrical fuse device and the second electrical fuse device in a conductive state, and a determination portion that determines a voltage level of a predetermined contact point connecting the other end of the first electrical fuse device and the other end of the second electrical fuse device.

Abstract: A method of programming a transistor-based fuse structure is provided. The fuse structure is realized in a semiconductor device having a semiconductor substrate, transistor devices formed on the semiconductor substrate, and the transistor-based fuse structure formed on the semiconductor substrate. The transistor-based fuse structure includes a plurality of transistor-based fuses, and the method begins by selecting, from the plurality of transistor-based fuses, a first target fuse to be programmed for operation in a low-resistance/high-current state, the first target fuse having a first source, a first gate, a first drain, and a first gate insulator layer between the first gate and the semiconductor substrate.

Abstract: A gate of a MOS transistor connected to a fuse device in series is controlled by an AND circuit connected to the same power source as the fuse device is connected, thereby pulling down one input of the AND circuit to a ground. Thus, misprogramming of the fuse device when an LSI power source is turned ON/OFF can be prevented.

Abstract: Digital trimming logic is included in a microelectronic device of a type that produces an output signal in response to an input signal and a threshold signal. Trimming logic values are produced in response to a clock signal that is applied to the device in a trimming mode. The clock signal can be applied to a device pin that is used in normal operation to provide an output signal, thus allowing the pin to serve a dual function. The trimming logic changes the trimming logic value in response to the clock signal until the trimming logic value reaches a trim value at which the threshold signal is substantially equal to the input signal. The trimming logic then stores the trim value in a non-volatile memory and enters a locked mode in which further trimming is prevented and the device is ready for normal operation.

Abstract: A design structure for an apparatus for programming an electronically programmable semiconductor fuse. The apparatus applies a programming current to a fuse link as a series of multiple pulses. Application of the programming current as a series of multiple short pulses provides a level of programming current sufficiently high to ensure reliable and effective electromigration while avoiding exceeding temperature limits of the fuse link.

Abstract: A design structure embodied in a machine readable medium used in a design process includes a circuit that employs an anti-tamper sensor. The circuit employs an anti-tamper sensor that includes a circuit element that is responsive to a first input and to a second input. A selective coupling element couples the circuit element to the first input and is responsive to the anti-tamper sensor. The selective coupling element has a first state that allows the circuit element to operate normally when the anti-tamper sensor does not detect a tamper condition and is configured to enter a second state that causes the circuit element to become inoperable when the anti-tamper sensor detects a tamper condition. A decoy coupling element is disposed between the second input and the circuit element and has an appearance corresponding to the selective coupling element.

Abstract: Disclosed are a fuse box and a semiconductor integrated circuit having the same. The semiconductor integrated circuit includes a plurality of banks, column control blocks, and column fuse blocks. The plurality of banks including a plurality of mat rows and mat columns. The banks are arranged in row and column directions and disposed away from each other. The column control blocks are disposed in a space between the banks which are extended to the column direction. The column fuse blocks are disposed adjacent to the column control blocks and have a plurality of fuse boxes. The fuse boxes include fuse sets arranged in two rows. The fuse boxes are disposed to correspond to the one mat column. Each fuse box has an interconnection fuse and address fuses which are arranged with a constant interval and are the same type.

Abstract: A programmable anti-fuse element includes a substrate (224), an N-well (426) in the substrate, an electrically insulating layer (427) over the N-well, and a gate electrode (430) over the electrically insulating layer. The gate electrode has n-type doping so that the N-well is able to substantially contain within its boundaries a current generated following a programming event of the programmable anti-fuse element. In the same or another embodiment, a twice-programmable fuse element (100) includes a metal gate fuse (110) and an oxide anti-fuse (120) such as the programmable anti-fuse element just described.

Abstract: A fuse circuit for sensing a fuse connected state and layout designing method thereof are disclosed. Embodiments include a fuse program control unit providing a fuse open voltage in response to a program signal, a fuse cell unit configured to use a contact resistor connecting a node supplied with the fuse open voltage and a node supplied with a fuse connection voltage as a fuse, the fuse cell unit outputting a state information of the contact resistor in response to the fuse open voltage, and a fuse sensing unit outputting a fuse data signal corresponding to the state information of the contact resistor in response to a read signal. Accordingly, embodiments reduce a layout size of the fuse circuit.

Abstract: A virtual electronic fuse apparatus and methodology are disclosed that permit the state of an electronic fuse to change from an un-blown state to a blown state and then back to a virtual un-blown state. In one embodiment, the electronic fuse may change from the virtual un-blown state back to a virtual blown state.

Abstract: One or more embodiments of the present disclosure provide methods, devices, and systems for operating memory devices having fuse circuits. One method embodiment includes detecting a signal indicating whether a voltage used during operation of at least one of a number of fuse circuits has reached a threshold level, initializing at least one of the number of fuse circuits in response to detecting that the voltage has reached the threshold level, and reading an output of at least one of the number of fuse circuits at least partially in response to a detected state change of an output of the at least one initialized fuse circuit.

Abstract: A trim fuse circuit includes a metal fuse, a trim pad coupled to the first end of the metal fuse, a first transistor coupled to the first end of the metal fuse, a second transistor coupled to the second end of the metal fuse, an inverter coupled to the second end of the metal fuse, a switch coupled to the second end of the metal fuse, and a common trim pad coupled to the control end of the switch. The inverter outputs a data signal according to the status of the metal fuse. The trim pad can be disposed on the scribe line of a wafer. When the trim pad is cut and accordingly connects to the substrate of the wafer, the data signal is not affected.

Abstract: An antifuse circuit includes a protection circuit. The antifuse circuit receives a program voltage using a non-connection (NC) pin or ball of a semiconductor device. The protection circuit prevents an unintended voltage lower than the program voltage from being applied to the antifuse circuit.

Abstract: Example embodiments are directed to an antifuse circuit of an inverter type and a method of programming the same. The antifuse circuit has improved corrosion resistance, utilizes lesser chip area and can be programmed at a low voltage. The antifuse circuit includes a PMOS transistor with the gate coupled to a drive power voltage terminal and the source coupled to an anti-pad terminal. During programming the PMOS transistor is off and the source receives an alternating current. Programming the antifuse circuit involves trapping a plurality of electron in an STI region as a result of gate-induced drain leakage. The antifuse circuit also includes an NMOS transistor with the drain connected to the drain of the PMOS transistor, the source connected to ground and the gate connected to a program control signal. The antifuse circuit results in reliable fuse programming at a low voltage by using the PMOS transistor as an anti-fuse device.

Abstract: An exemplary embodiment of an efuse device is provided, operating in a write mode and a read mode and comprising a source line, a cell, a blow device, and a sensing circuit. The cell has a first terminal coupled to the source line and a second terminal. The blow device is coupled between the second terminal of the cell and a ground terminal. The blow device is turned on in the read mode. The sensing circuit is coupled to the first terminal of the cell and the ground terminal, and is arranged to determine a state of the cell.

Abstract: A digital-to-analog converter, in response to a digital signal, selectively taps a resistor string to generate an analog output and selectively shunts around resistors in the string to voltage shift the analog output. If two supply voltage sets are present, two strings are provided. A mutually exclusively selection of outputs is made to select a source of the analog output. An integrated circuit temperature sensor uses the converter and includes a sensing circuit that determines exposure to one of a relatively low or high temperature. A measured voltage across the base-emitter of a bipolar transistor is selected in low temperature exposure and compared against a first reference for a too cold temperature condition. Alternatively, a measured delta voltage across the base-emitter is selected in high temperature exposure and compared against a second reference voltage for a too hot temperature condition. Through the comparisons, a temperature exposure detection is made.

Abstract: A semiconductor device includes a first high potential power supply, a second low potential power supply, a third power supply having a potential higher than the first, a fourth power supply having a potential more negative than the second, and an anti-fuse element having a node at each end, one of which is connected to the fourth power supply. A driver transistor has a source connected to the third power supply, a gate connected to a control node and a drain connected to one end of the anti-fuse element. A decoding circuit includes a load transistor connected between the third power supply and the control node and at least one selection transistor connected between the second power supply and the control node. A decision circuit is connected to the first and second power supplies. The decision circuit decides the resistance value of the anti-fuse element. The anti-fuse element is rendered electrically conductive in response to activation of the driver transistor as selected by the decoding circuit.

Abstract: An input latch circuit of a semiconductor device includes a setup time adjusting unit configured to selectively delay a clock signal and a hold time adjusting unit configured to selectively delay an input signal. The input latch circuit also includes a latch unit configured to latch an output signal of the hold time adjusting unit according to an output signal of the setup time adjusting unit. The input latch circuit changes and delays the clock signal and the input signal by cutting a fuse within the setup time adjusting unit and the hold time adjusting unit without requiring a change to a circuit in order to adjust a setup time and a hold time.

Abstract: An internal power voltage trimming circuit and its method individually or simultaneously perform level trimming for a plurality of power voltages in a semiconductor memory device. The internal power voltage trimming circuit includes a trimming control signal generator for generating a trimming selection signal and a trimming enable signal by using an inputted address signal, and an internal power voltage level controller for controlling the levels of the internal power voltages by using the trimming selection signal that is outputted under control of the trimming enable signal.

Abstract: A resistor circuit includes n-stage unit circuits, each of which includes a first resistor element provided between first and second terminals, a first disconnection element provided between the second and third terminals, and a second disconnection element and a second resistor element provided in series between the second and fourth terminals. The first terminal of each of the n-stage unit circuits is connected with a first interconnect, the fourth terminal of each of the n-stage unit circuits is connected with a second interconnect, the third terminal of the first-stage unit circuit is connected with a third interconnect, and the third terminal of the mth-stage unit circuit is connected with the second terminal of the (m?1)th-stage unit circuit.

Abstract: The present invention provides structures for antifuses that utilize electromigration for programming. By providing a portion of antifuse link with high resistance without conducting material and then by inducing electromigration of the conducting material into the antifuse link, the resistance of the antifuse structure is changed. By providing a terminal on the antifuse link, the change in the electrical properties of the antifuse link is detected and sensed. Also disclosed are an integrated antifuse with a built-in sensing device and a two dimensional array of integrated antifuses that can share programming transistors and sensing circuitry.

Abstract: A circuit arrangement including a fuse comprises a fuse path (SP) which is coupled to a control input (SE) and comprises the fuse (RS) and a first charge reservoir (C1) serially connected thereto for providing a first charge state (L1), a reference path (RP) which is coupled to the control input (SE) and comprises a comparison element (RV) and a second charge reservoir (C2) serially connected thereto for providing a second charge state (L2), and an evaluation unit (AE) comprising a first input (E1) connected to the fuse path (SP) in a switchable manner, a second input (E2) connected to the reference path (RP) in a switchable manner, and a data output (DA) for providing a condition of the fuse (RS) depending on a difference between the first and second charge states (L1, L2). Further, a method for determining the condition of a fuse is provided.

Abstract: Systems and methods for detecting the mode (a.k.a., state) of a fuse or set of fuses in a device such as an integrated circuit. One embodiment comprises a method for determining three fuse states (uncut, cut, and destroyed) by comparing the fuse voltage with two reference voltages. Each fuse state has a different (indicative) impedance and is associated with a fuse voltage. The fuse voltage is below, between, or above two reference voltages, thereby determining the fuse state. One embodiment includes the fuse in series with a read transistor as well as two reference voltage generators, each comprising a resistor and a transistor (equivalent to the read transistor). Both resistors' impedances are greater than the uncut fuse impedance and one is less than the cut fuse impedance. Two comparators are used to bracket the fuse voltage, indicating that the fuse is uncut, cut, or destroyed.

Abstract: A trimming circuit for a semiconductor memory apparatus includes a trimming code generator configured to provide a trimming code signal group by performing one of addition and subtraction using a test mode signal and a fuse coding signal, and an internal voltage generator configured to provide trimmed voltage in response to the trimming code signal group as output voltage.

Abstract: An electrical fuse and a process of programming the same are presented. An electrical fuse comprises a lower level silicide layer on a non-doped or lightly-doped polysilicon layer, an upper level conductive layer, and a tungsten contact coupled between the lower level silicide layer and the upper level conductive layer. The tungsten contact and a neck portion of the silicide layer are the programmable portion of the electrical fuse. High post-programming resistance is achieved by a first programming phase that depletes silicide in the silicide layer, followed by a second programming phase that depletes tungsten in the tungsten contact.

Abstract: The reference current source circuit (10) is provided with a current source circuit (1), a trimming fuse (3), a switching circuit (2) which connects/disconnects the current source circuit (1) and/from the trimming fuse (3), a NAND circuit (4) which controls the operation of the switching circuit (2), and a pull-down resistor (R1) which connects one input terminal of the NAND circuit (4) to a GND terminal. The NAND circuit (4) controls the operation of the switching circuit (2) upon receipt of control signals (S1 and S2) and also in accordance with a signal of the one input terminal of the NAND circuit (4) so as to connect the current source circuit (1) to the trimming fuse (3). This arrangement makes it possible to measure characteristics of a semiconductor integrated circuit after fuse trimming. In addition, it is possible to maintain the state after fuse trimming without the supply of a signal from outside.

Abstract: A trim fuse circuit includes a metal fuse, a trim pad coupled to the first end of the metal fuse, a first transistor coupled to the first end of the metal fuse, a second transistor coupled to the second end of the metal fuse, an inverter coupled to the second end of the metal fuse, a switch coupled to the second end of the metal fuse, and a common trim pad coupled to the control end of the switch. The inverter outputs a data signal according to the status of the metal fuse. The trim pad can be disposed on the scribe line of a wafer. When the trim pad is cut and accordingly connects to the substrate of the wafer, the data signal is not affected.

Abstract: A method and circuit for implementing precise eFuse resistance measurement, and a design structure on which the subject circuit resides are provided. An eFuse sense amplifier coupled to an eFuse array and used for current measurements includes balanced odd and even bitlines, and a plurality of programmable reference resistors connected to the balanced odd and even bitlines. First a baseline current measurement is made through one of the programmable reference resistors, and used to identify a network baseline resistance. A current measurement is made for an eFuse path including a selected eFuse and used to identify the resistance of the selected eFuse.

Abstract: In one embodiment, a method provides a bipolar junction transistor that is coupled to a first power supply. A second power supply is utilized to turn on the bipolar junction transistor. And, the bipolar junction transistor is overdriven.

Abstract: A fuse option circuit including a fuse, a control switch, a latch, and a logical operational controller is provided. The latch stores a selected level. The logical operational controller outputs a selected result signal and feedbacks a control signal to the control switch. The level of the control signal determines whether the control switch is on or off. Therefore, the required level is input to the latch and the working mode having an ultra low current is selected. Furthermore, when the fuse is in an untrimmed state, the level of the selected result signal could be selected by a reset pulse signal of the latch in order to test a product. Afterward, it is determined whether the fuse is trimmed or not. When the fuse is in a trimmed state, the level of the selected result signal is established by a rising edge of the reset pulse signal.

Abstract: A semiconductor device used as an ID chip is provided, of which operation is terminated when its role is finished or expires. According to the invention, an antenna circuit, a voltage detecting circuit, a current amplifier circuit, a signal processing circuit, and a fuse are provided over an insulating substrate. When large power is applied to the antenna circuit, a voltage is detected by voltage detecting circuit and a corresponding current is amplified by the current amplifier circuit, thereby the fuse is melted down. Also, when an anti-fuse is used, the anti-fuse can short an insulating film by applying an excessive voltage. In this manner, the semiconductor device has a function for making it invalid by stopping operation of the signal processing circuit when the role of the device is finished or expires.

Abstract: Disclosed are a semiconductor device capable of reducing the number of program fuses used therein, and a fuse circuit selection method capable of reducing the number of program fuses. The semiconductor device includes: a fuse circuit (11) and an entire inversion fuse circuit (12), each of which includes plural program fuses, and which store desired addresses based on cutting patterns of the plural program fuses, wherein the fuse circuit (11) and the entire inversion fuse circuit (12) are configured to be capable of storing addresses different from each other based on the same cutting pattern. As described above, since plural types of the cutting patterns of the program fuses exist even in the same address, the fuse circuit for use is appropriately selected, thus it is made possible to reduce the number of fuse elements to be cut as a whole. Thus, manufacturing cost of the semiconductor device can be reduced, and in addition, it is made possible to enhance reliability of the semiconductor device.

Abstract: A current mirror circuit has a first MOS transistor to which an input current is supplied. The first MOS transistor has a gate formed of polysilicon. A second MOS transistor has a gate formed of polysilicon and connected directly to the gate of the first MOS transistor via a polysilicon layer for producing an output current whose magnitude is a magnitude of the input current multiplied by a current mirror ratio. A fuse has one terminal connected to a gate portion between the gate of the first MOS transistor and the gate of the second MOS transistor and another terminal that is grounded.

Abstract: An integrated circuit includes a trimming signal creating section, disposed downstream of a trimming circuit in which a number of fuses are arranged in alignment, creating a trimming signal corresponding to the trimming value on the basis of a signal output from said trimming circuit and arranges blown object fuses such that every two of the blown object fuses are interposed at least one un-blown fuses in the trimming circuit. An efficient arrangement of blowing points in addition to the above arrangement of blown object fuses can reduce the area occupied by the trimming circuit.