Abstract: Various embodiments of a fuse circuit of a semiconductor apparatus are disclosed. In one exemplary embodiment, the fuse circuit may include a fuse whose electrical connection state can be changed by an electrical stress applied thereto and a plurality of self boosting units configured to perform self boosting operations under the control of a rupture enable signal. The self boosting units may also be configured to generate stress voltages and supply the generated stress voltages to the fuse. The fuse circuit may also include a precharge unit configured to supply a precharge voltage to the fuse in response to a precharge signal and a cross-coupled latching amplification unit configured to sense a change in a voltage level of the precharge voltage supplied to the fuse, with reference to a reference voltage, and output a fuse state signal.

Abstract: In one embodiment, a redundancy circuit may include a comparison unit configured to record a first repair address through fuse cutting, compare a comparison address with the first repair address, and output a comparison result signal; a first fuse enable unit configured to output a first fuse enable signal for repairing the first repair address; a second fuse enable unit configured to output a second fuse enable signal for repairing a second repair address; a first determination unit configured to output a first repair determination signal in response to receipt of the first fuse enable signal and the comparison result signal; and a second determination unit configured to output a second repair determination signal in response to receipt of an inverted signal of a value of the comparison result signal corresponding to the certain bit, remaining bits, and the second fuse enable signal.

Abstract: Integrated circuit die stacks having a first die mounted upon a substrate, the first die manufactured to be initially identical to a second die with a plurality of through silicon vias (‘TSVs’), the first die personalized by blowing fuses on the first die, converting the TSVs previously connected through the blown fuses into pass-through vias (‘PTVs’), each PTV implementing a conductive pathway through the first die with no connection to any circuitry on the first die; and the second die, manufactured to be initially identical to the first die and later personalized by blowing fuses on the second die, the second die mounted upon the first die so that the PTVs in the first die connect signal lines from the substrate through the first die to TSVs in the second die.

Abstract: Provided are a trimming circuit which does not need a dedicated terminal to which a current for cutting a fuse is input, and also a semiconductor device including the trimming circuit. The trimming circuit includes: an input terminal connected to a pad which is an external terminal of an internal circuit; a fuse provided between a power supply terminal and an output terminal; and a diode provided between the input terminal and the output terminal. The trimming circuit performs trimming by applying, to the pad, such a voltage that the diode is biased in the forward direction.

Abstract: A highly reliable trimming circuit is provided. A rewritable trimming circuit is provided. A method for driving a highly reliable trimming circuit is provided. A method for driving a rewritable trimming circuit is provided. The trimming circuit includes a storage node connected to a source electrode or a drain electrode of a transistor whose off-state leakage current is extremely low and a transistor whose gate electrode is connected to the storage node. The trimming state of an element or a circuit connected in parallel to a source electrode and a drain electrode of the transistor whose gate electrode is connected to the storage node is controlled using the transistor whose off-state leakage current is extremely low.

Abstract: An electronic trimming circuit carries out a trimming operation on portions of an integrated device. The circuit includes N trimmable interconnected resistances, each connected in parallel to a respective shunt fuse. N trimming transistors are each connected to a respective one of the shunt fuses to force therethrough substantially the whole current flowing in the respective trimming transistor. N bias networks are each functionally connected to a control terminal of a respective one of the trimming transistors to directly bias an active junction thereof. An externally driven heating device is thermally coupled with the active junctions of the trimming transistors adapted to raise the temperature thereof.

Abstract: A semiconductor apparatus includes: a plurality of electrical fuses; a rupture unit configured to rupture an electrical fuse in response to rupture information applicable to the plurality of electrical fuses, when a rupture enable signal is activated; a scan unit configured to output information on whether an each of the plurality of electrical fuses are ruptured or not, as scan information, when a scan enable signal is activated; and a shift register unit configured to receive an input signal in synchronization with a clock signal and store the input signal as the rupture information, and configured to receive the scan information and output the scan information as an output signal in synchronization with the clock signal.

Abstract: The trimming circuit includes a plurality of trimmable resistances that may be coupled among them, each resistance being connected in parallel to a respective fuse. The trimming circuit allows burning any number of fuses according to a fixed trimming sequence using only one or two dedicated pins because it includes an input diode-connected transistor and a plurality of trimming transistors of different sectional area, each connected to force current throughout a respective one of the shunt fuses and coupled to the input diode-connected transistor such to mirror the current flowing therethrough. The fuses of the trimming circuit may be burnt by applying a trimming voltage to the diode-connected input transistor with a voltage generator connected between a dedicated pin of the circuit and a terminal at a reference potential, such to force a current therethrough as long as the mirrored currents flowing throughout the fuses burn them.

Abstract: A fuse circuit of a semiconductor device includes a transfer unit configured to selectively transfer a corresponding address signal in response to a first test mode signal, a fuse control unit configured to drive an output end with a first voltage in response to an output signal of the transfer unit, a fuse unit including a MOS transistor having a gate coupled to the output end, and a fuse enable unit configured to selectively supply a second voltage to a source/drain of the MOS transistor of the fuse unit in response to the first test mode signal, wherein the fuse circuit is programmed by causing a breakdown of the MOS transistor in response to a voltage difference between the first voltage and the second voltage that are applied to the gate and the source/drain of the MOS transistor of the fuse unit.

Abstract: A semiconductor device includes a first circuit, a second circuit, and a first voltage dividing circuit. The first circuit is coupled to a first terminal. The first circuit is operable by a first voltage supplied from the first terminal. The second circuit is coupled through a first resistive element to the first terminal. The second circuit is operable by a second voltage supplied through the first resistive element from the first terminal. The second voltage is smaller in absolute value than the first voltage. The first voltage dividing circuit is coupled to a first node between the first resistive element and the second circuit. The first voltage dividing circuit has a conductive state and a non-conductive state. The first voltage dividing circuit is kept in the conductive state while applying the first voltage to the first terminal to allow the first circuit to operate by the first voltage.

Abstract: A method and an eFuse circuit for implementing with enhanced eFuse blow operation without requiring a separate high current and high voltage supply to blow the eFuse, and a design structure on which the subject circuit resides are provided. The eFuse circuit includes an eFuse connected to a field effect transistor (FET) operatively controlled during a sense mode and a blow mode for sensing and blowing the eFuse. The eFuse circuit is placed over an independently voltage controlled silicon region. During a sense mode, the independently voltage controlled silicon region is grounded providing an increased threshold voltage of the FET. During a blow mode, the independently voltage controlled silicon region is charged to a voltage supply potential. The threshold voltage of the FET is reduced by the charged independently voltage controlled silicon region for providing enhanced FET blow function.

Abstract: A circuit arrangement including a fuse comprises a fuse path (SP) which is coupled to a control input (SE) and comprises the fuse (RS) and a first charge reservoir (C1) serially connected thereto for providing a first charge state (L1), a reference path (RP) which is coupled to the control input (SE) and comprises a comparison element (RV) and a second charge reservoir (C2) serially connected thereto for providing a second charge state (L2), and an evaluation unit (AE) comprising a first input (E1) connected to the fuse path (SP) in a switchable manner, a second input (E2) connected to the reference path (RP) in a switchable manner, and a data output (DA) for providing a condition of the fuse (RS) depending on a difference between the first and second charge states (L1, L2). Further, a method for determining the condition of a fuse is provided.

Abstract: A semiconductor device includes a signal output unit, and a decision unit. The signal output unit includes m (?2) pieces of fuses, a NAND gate, resistance elements, and an output terminal. The decision unit decides whether n or more pieces (m?n?2) of fuses are disconnected out of the m pieces of fuses included in the signal output unit, and outputs the result of a decision. When m=n=2, the decision unit is constituted of a NOR gate having two input terminals connected to a respective end of the fuses. Thus, a H-level potential signal is output at an output terminal of the NOR gate when the decision result is affirmative. On the other hand, when the decision result is negative, a L-level potential signal is output at the output terminal.

Abstract: A fuse circuit comprises a fuse set and an enable circuit. The enable circuit is configured to receive a test mode enable signal and a power up signal to generate an enable signal and a voltage level to the fuse set for indicating whether an external supply voltage reaches a predetermined value and whether a test mode is enabled. In particular, an output signal of the fuse set is constant in the test mode, regardless of whether a fuse in the fuse set is blown or not.

Abstract: A semiconductor integrated circuit includes a fuse set; a terminal assigned to be applied with a first external signal in a normal operation; and a control unit configured to receive a second external signal through the terminal and apply the received second external signal to the fuse set in a fuse control operation.

Abstract: A trim circuit for a power supply controller includes: a control circuit; at least a capacitance type programmable circuit connection; and a switching circuit, under control of the control circuit, the switching circuit selectively coupling the capacitance type programmable circuit connection to anyone of an operation voltage and a programming voltage, for determining a programming state of the capacitance type programmable circuit connection.

Abstract: After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).

Abstract: A trimming circuit for a semiconductor memory apparatus includes a trimming code generator configured to provide a trimming code signal group by performing one of addition and subtraction using a test mode signal and a fuse coding signal, and an internal voltage generator configured to provide trimmed voltage in response to the trimming code signal group as output voltage.

Abstract: An electric fuse cutoff control circuit controlling cutoff of a plurality of electric fuses including: a cutoff information storage circuit adapted to store cutoff information about whether or not each of the plurality of electric fuses is cut off; a cutoff information control circuit controlling the cutoff of the plurality of electric fuses based on an output signal of the cutoff information storage circuit; and a cutoff information renewal circuit receiving an output signal of the cutoff information control circuit and renewing the cutoff information set for the cutoff information storage circuit.

Abstract: A fuse circuit includes a control signal generation unit configured to generate a control signal that is enabled after a moment when a power-up signal is enabled, a potential control unit configured to control potentials of both ends of a fuse in response to the control signal, and a fuse output unit configured to be initialized in response to the power-up signal and output a fuse signal in response to whether the fuse is cut or not.

Abstract: An antifuse circuit includes a protection circuit. The antifuse circuit receives a program voltage using a non-connection (NC) pin or ball of a semiconductor device. The protection circuit prevents an unintended voltage lower than the program voltage from being applied to the antifuse circuit.

Abstract: A trimmer circuit is so configured that an electronic device will break down to produce a high current to trim a fuse. The electronic device is selectively configured to have a breakdown voltage lower than an applied voltage, for the trigger of its breakdown to be controllable. In an embodiment, the electronic device is switched between two states having two breakdown voltages respectively, and the applied voltage is higher than one of the breakdown voltages and lower than the other one.

Abstract: A fuse detecting apparatus includes a detector, a calibrator and a logical operating unit. The detector includes a detecting switch module and a detecting latch. The detecting switch module generates an initial detecting result according to first and second control signals and a status of the fuse. The detecting latch stores a voltage level of the initial detecting result or maintains its originally stored voltage level according to the initial detecting result for generating a pre-calibrating detecting signal. The calibrator includes a calibrating switch module and a calibrating latch. The calibrating switch module generates a calibrating result according to the first and second control signals. The calibrating latch stores the calibrating result and generates a calibrating signal accordingly. The logical operating unit generates a calibrated detecting signal according to the pre-calibrating detecting signal and the calibrating signal.

Abstract: Programmable anti-fuse circuitry including at least one anti-fuse cell having a first anti-fuse device coupled between a supply voltage and a first node and a second anti-fuse device coupled between the first node and a ground voltage, and control logic coupled to the first node and arranged to generate a programming voltage having one of at least a first voltage level for breaking-down the first anti-fuse device but not the second anti-fuse device and coupling the first node to the supply voltage; and a second voltage level for breaking-down the second anti-fuse device but not the first anti-fuse device and coupling the first node to the ground voltage.

Abstract: A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

Abstract: Such a device is disclosed that includes a first ladder fuse for which blowing points are arranged at a first coordinate and a second ladder fuse for which blowing points are arranged at a second coordinate. When adjustment data for adjusting circuit characteristics is within a first range, a trimming operation is performed on both the first and second ladder fuses, and when the adjustment data for adjusting the circuit characteristics is within a second range, the trimming operation is performed on the second ladder fuse without performing the trimming operation on the first ladder fuse. This configuration eliminates a necessity of irradiation on the first ladder fuse with a laser when the adjustment data is within the second range.

Abstract: Methods, systems, and apparatus, including computer program products for programming memory. In one aspect, a program circuit includes a first transistive element; a second transistive element coupled to a first end of the first transistive element; a burn subcircuit, the burn subcircuit including a third transistive element coupled to a fourth transistive element, where the drain of the third transistive element is coupled to a second end of the first transistive element, and the source of the third transistive element is coupled to the drain of the fourth transistive element; and a fifth transistive element coupled in parallel to the fourth transistive element. Control logic coupled to the first transistive element, the burn subcircuit, and the fourth transistive element selectively enables the second transistive element, selectively enables the fourth transistive element, and selectively enables the fifth transistive element to enable a read mode or a program mode.

Abstract: Systems and methods for CMOS-based MEMS programmable memories are described. In one aspect, the systems and methods provide for a programmable memory having multiple memory cells. Each memory cell includes an electrode disposed within the memory cell, and a conductor material having two ends disposed proximate to the electrode. The programmable memory provides means for applying a voltage between the electrode and the conductor material, e.g., a voltage source. The applied voltage generates an electrostatic force sufficient to permanently alter the conductor material, thereby programming the memory cell.

Abstract: A multi-level electrical fuse system comprises at least one fuse box having at least one electrical fuse, a programming device serially coupled to the electrical fuse, and a variable power supply coupled to the fuse box and configured to generate two or more voltage levels.

Abstract: There is described a passive heater-and-diode multiplexing network for selective addressing of thermally-coupled and electrically-disconnected fuses within a passive device network (resistor/capacitor/inductor) or within an application circuit.

Abstract: A semiconductor device includes a signal output unit, and a decision unit. The signal output unit includes m (?2) pieces of fuses, a NAND gate, resistance elements, and an output terminal. The decision unit decides whether n or more pieces (m?n?2) of fuses are disconnected out of the m pieces of fuses included in the signal output unit, and outputs the result of a decision. When m=n=2, the decision unit is constituted of a NOR gate having two input terminals connected to a respective end of the fuses. Thus, a H-level potential signal is output at an output terminal of the NOR gate when the decision result is affirmative. On the other hand, when the decision result is negative, a L-level potential signal is output at the output terminal.

Abstract: The invention relates to a semiconductor device comprising a fuse that is implemented as a bar type pattern that forms a straight line instead of a pattern that is difficult to secure a manufacturing margin. A fuse block including a plurality of fuses comprises a plurality of first connection parts, each including a blowing area, a plurality of second connection parts, wherein the plurality of the second connection parts and the plurality of the corresponding first connection parts respectively form part of the fuse, and a common connection unit configured to electrically connect the plurality of the first connection parts and the plurality of the second connection parts.

Abstract: A semiconductor device includes an electric fuse circuit and a program protective circuit. The electric fuse circuit includes a fuse element and a transistor connected together in series and placed between a program power supply and a grounding, and controlling sections. The program protective circuit is placed in parallel with the electric fuse circuit and between the program power supply and the grounding. When a surge voltage is applied between the program power supply and the grounding, the foregoing structure allows a part of a surge electric current can flow through the program protective circuit.

Abstract: An apparatus for programming an electronically programmable semiconductor fuse applies a programming current to a fuse link as a series of multiple pulses. Application of the programming current as a series of multiple short pulses provides a level of programming current sufficiently high to ensure reliable and effective electromigration while avoiding exceeding temperature limits of the fuse link.

Abstract: An integrated circuit includes a sensing circuit, a fuse box, and a fuse bus decoder. The sensing circuit includes an output node, and the fuse box includes a plurality of switches coupled in series with a plurality of resistive elements. The fuse box is coupled to the output node of the sensing circuit from which the fuse box is configured to receive a current. The fuse bus decoder is coupled to the fuse box and includes at least one demultiplexer configured to receive a signal and in response output a plurality of control signals for selectively opening and closing the switches of the fuse box to adjust a resistance across the fuse box. A voltage of the output node of the sense amplifier is based on a resistance the fuse box and the current.

Abstract: Implementations are presented herein that relate to a fuse device, an integrated circuit including a fuse device, a method of implementing a fuse device and a method of programming a fuse device.

Abstract: A fuse circuit of a semiconductor device includes a plurality of fuse set units configured to compare an input address with address information programmed according to a fuse cutting state and a test control unit configured to enable one or more fuse set units selected based on a number of times that a selection signal is enabled in a test mode.

Abstract: A fuse circuit comprises a fuse set and an enable circuit. The enable circuit is configured to receive a test mode enable signal and a power up signal to generate an enable signal and a voltage level to the fuse set for indicating whether an external supply voltage reaches a predetermined value and whether a test mode is enabled. In particular, an output signal of the fuse set is constant in the test mode, regardless of whether a fuse in the fuse set is blown or not.

Abstract: A trimming circuit is provided. The trimming circuit had at least a trimming cell, and each of the at least trimming cell includes three current paths and a fuse. A first one of the current paths is interrupted when a second one of the current paths is uninterrupted, and the first one of the current paths is uninterrupted when the second one of the current paths is interrupted. When a trimming control signal is at an enable state, a third one of the current paths is uninterrupted, such that the fuse is blown. Based on the status of the fuse, the trimming circuit is capable of trimming an output voltage or an output current of an electric apparatus.

Abstract: A fuse system for use with a disposable component of a device may include a disposable component having at least a first lockout circuit and a second lockout circuit. The first lockout circuit may include a first fuse link, and the second lockout circuit may include a second fuse link. The fuse system may include a computing device in communication with the first lockout circuit and the second lockout circuit, and a computer-readable storage medium in communication with the computing device. The computer-readable storage medium may include one or more programming instructions for deactivating the first fuse link at a first time, and deactivating the second fuse link at a second time.

Abstract: A semiconductor system includes a controller; a semiconductor device comprising a plurality of stacked semiconductor chips stacked over the controller, and a plurality of through-silicon vias (TSVs) configured to commonly transfer a signal to the plurality of stacked semiconductor chips; and a defect information transfer TSV configured to transfer TSV defect information sequentially outputted from at least one of the semiconductor chips to the controller, wherein the controller comprises: a plurality of first repair fuse units configured to set first fuse information based on the TSV defect information; and a plurality of first TSV selection units configured to selectively drive the TSVs in response to the first fuse information.

Abstract: A fuse detecting apparatus including a detector, a calibrator and a logical operating unit is disclosed. The detector includes a detecting switch module and a detecting latch. The detecting switch module generates an initial detecting result according to a first and a second control signals and a status of the fuse. The detecting latch stores a voltage level of the initial detecting result or maintains its originally stored voltage level according to the initial detecting result for generating a pre-calibrating detecting signal. The calibrator includes a calibrating switch module and a calibrating latch. The calibrating switch module generates a calibrating result according to the first and the second control signals. The calibrating latch stores the calibrating result and generates a calibrating signal accordingly. The logical operating unit generates a calibrated detecting signal according to the pre-calibrating detecting signal and the calibrating signal.

Abstract: Circuitry on an integrated circuit is provided that may be used to program fuses such as polysilicon fuses. Fuse programming may be performed using an elevated power supply voltage. Other circuitry on the integrated circuit may be powered using a standard power supply voltage that is less than the elevated power supply voltage. Fuse sensing may be performed using the standard power supply voltage. A control block may be used to produce a fuse programming control signal. Power-on-reset circuitry may monitor the elevated power supply voltage and may produce a corresponding elevated power supply voltage power-on-reset signal indicative of whether the elevated power supply voltage is valid. The power-on-reset circuitry may also produce a standard power supply power-on-reset signal indicative of whether the standard power supply voltage is valid. The power-on-reset signals may be used in controlling fuse programming and fuse sensing.

Abstract: A high voltage tolerative inverter circuit includes a first PMOS transistor with a source connected to VDDQ and drain connected to a first node; a second PMOS transistor with a source connected to the first node and a drain connected to an output; a first NMOS transistor with a source connected to VSS and a drain connected to a second node; a second NMOS transistor with a source connected to the second node and a drain connected to the output. A gate of the first PMOS transistor is controlled by a first signal having a voltage swing between VDDQ and VSS. A gate of the first NMOS transistor and the second PMOS transistor are controlled by a second signal having a voltage swing between VDD and VSS. VDD is lower than VDDQ. A gate of the second NMOS transistor is biased with a first voltage greater than VSS.

Abstract: A trimmer circuit is so configured that an electronic device will break down to produce a high current to trim a fuse. The electronic device is selectively configured to have a breakdown voltage lower than an applied voltage, for the trigger of its breakdown to be controllable. In an embodiment, the electronic device is switched between two states having two breakdown voltages respectively, and the applied voltage is higher than one of the breakdown voltages and lower than the other one.

Abstract: A method for controlling performance of an integrated circuit using a zero-pin serial interface is provided. The method comprises identifying a desired performance characteristic of the circuit, and transmitting a first change mode signal to the circuit on a first pin to cause the circuit to enter an instruction reception mode, with the first pin performing differently during a normal operation mode. The method also comprises transmitting a performance adjusting instruction to the circuit on a second pin when the circuit is in the instruction reception mode, with the second pin performing differently during the normal operation mode, and transmitting a second change mode signal to the circuit on the first pin to cause the circuit to enter the normal operation mode. An output performance of the circuit is compared to the desired performance characteristic, with the output performance being the performance of the circuit during the normal operation mode.

Abstract: A soft clamp semiconductor device for preventing inadvertent programming of an unselected anti-fuse (AF) element comprises a MOSFET which includes a first well region disposed in a substrate. Source and drain regions are disposed in the first well region, the drain region being electrically coupled to the first capacitive plate of the AF element and the source region being electrically coupled to a second capacitive plate of the AF element. An insulated gate is disposed over a channel area of the first well region that separates the drain and source regions. A gate capacitance of the MOSFET is substantially less than a capacitance of the unselected AF element such that when a programming voltage is applied to the first capacitive plate, a current flows through the MOSFET that charges the second capacitive plate, thereby reducing a voltage build-up across the unselected AF element.

Abstract: Electrical fuse indicators, systems and methods for detecting when fuses enter an open state involve a wireless identification element, which alerts a communication unit that the fuse has entered an open state. The wireless identification device may include an antenna. The antenna may be in contact with a fuse element, such that opening of the fuse element renders the antenna inoperable. Alternatively the antenna may be connected to the fuse element in such a manner that opening of the fuse element alters the frequency on which the antenna transmits. A logic port may also be used to detect the operational state of a fuse. Use of such indicators is compatible with existing infrastructure.

Abstract: A matrix of explosive cells can include plural explosive cells formed in an array in a common substrate. Each cell can be formed as a recess filled with explosive material. An ignition device has an addressable ignition source for each cell. This matrix can be used in combination with a projectile guidance system. The projectile guidance system includes an antenna, a transceiver and a control processor. A method of guiding a projectile can include firing a projectile at a target, tracking the projectile and the target, determining a desired change in a flight path of the projectile, transmitting guidance commands to effect the desired change in the projectile's flight path to the projectile, receiving the guidance commands onboard the projectile and selectively igniting an explosive cell in a matrix of addressable explosive cells contained in a common substrate using the guidance commands.

Abstract: A trimmer circuit is so configured that an electronic device will break down to produce a high current to trim a fuse. The electronic device is selectively configured to have a breakdown voltage lower than an applied voltage, for the trigger of its breakdown to be controllable. In an embodiment, the electronic device is switched between two states having two breakdown voltages respectively, and the applied voltage is higher than one of the breakdown voltages and lower than the other one.