Abstract: A forward biasing protection circuit is provided. More specifically, there is provided a device comprising a transistor, a resistive element coupled to the body terminal of the transistor, and a clamping element coupled in parallel to the resistive element and configured to limit a voltage between the source terminal and the body terminal of the transistor. A method of manufacturing the forward biasing protection circuit is also provided.

Abstract: A voltage generator with reduced noise features a detector, a controller, a sub-booster, a main booster and a voltage adder. The detector receives an output voltage, a first reference voltage and a second reference voltage lower than the first reference voltage, and then outputs a first sensing signal and a second sensing signal. The controller receives the first sensing signal and the second sensing signal and an action signal to output a first control signal and a second control signal. The sub-booster boosts a voltage in response of the first control signal. The main booster boosts a voltage in response to the second control signal. The voltage adder adds output signals from the sub-booster and main booster, to provide the output voltage.

Abstract: An integrated circuit device including a plurality of MOSFETs of similar type and geometry is formed on a substrate with an ohmic contact, and an adjustable voltage source on the die utilizing clearable fuses is coupled between the ohmic contact and the sources of the MOSFETs. After die processing, a post-processing test is performed to measure an operating characteristic of the die such as leakage current or switching speed, and an external voltage source is applied and adjusted to control the operating characteristic. The on-die fuses are then cleared to adjust the on-die voltage source to match the externally applied voltage. The operating characteristic may be determined by including a test circuit on the die to exhibit the operating characteristic such as a ring oscillator frequency. This approach to controlling manufacturing-induced device performance variations is well suited to efficient manufacture of small feature-size circuits such as DRAMs.

Abstract: A process variation compensation circuit and method including a threshold voltage detector circuit, a comparator network, and a circuit block. The threshold voltage detector circuit is configured with at least one transistor that is manufactured during a process. The threshold voltage detector generates an output signal dependant on variations in the process. The comparator network is coupled to the threshold voltage detector. The comparator network receives the output signal and generates responsive logic signals that are indicative of the output signal. The circuit block is coupled to the comparator network and includes at least one transistor manufactured from the process. The circuit block is configured to receive the logic signals and to adjust the circuit block according to the received logic signals.

Abstract: A power supply reset boosting element which boosts a level of the reset voltage to a level higher than the level of the power supply. The boosted voltage is isolated from both the power supply and from undesired switching by special transistors which can withstand the voltage power supply level.

Abstract: A voltage detection unit generates a detection voltage signal representative of a potential difference caused by a current to be detected. A reference current generation unit generates a first reference current and a second reference current having a linear relationship therebetween. In response to the detection voltage signal and the first reference current, a transfer unit determines a first operation voltage. Furthermore, the transfer unit determines a second operation voltage and a transfer current in response to the first operation voltage and the second reference current. The second operation voltage is substantially equal to the first operation voltage. A detection current signal having a linear relationship with the current to be detected is generated through subtracting at least the second reference current from the transfer current.

Abstract: In order to provide a semiconductor IC unit such as a microprocessor, etc., which satisfies both fast operation and lower power consumption properties with its high quality kept, the semiconductor IC unit of the present invention is composed so as to include a main circuit (LOG) provided with transistors, which is formed on a semiconductor substrate, and a substrate bias controlling circuit (VBC) used for controlling a voltage to be applied to the substrate, and the main circuit includes switching transistors (MN1 and MP1) used for controlling a voltage to be applied to the substrate and control signals output from the substrate bias controlling circuit is entered to the gate of each of the switching transistors and the control signal is returned to the substrate bias controlling circuit.

Abstract: Circuit arrangement for voltage regulation having a differential amplifier having first and second inputs and first and second outputs, wherein a reference voltage is applied to the first input and a voltage to be regulated is applied to the second input. A charge pump is connected to the first output of the differential amplifier. A current mirror is connected to the second output of the differential amplifier. A transistor, which influences the voltage to be regulated, has its control input connected to the current mirror and the charge pump.

Abstract: A stabilization component for substrate potential regulation for an integrated circuit device. A comparator is coupled to a charge pump to control the charge pump to drive a substrate potential. A stabilization component is coupled to the comparator and is operable to correct an over-charge of the substrate by shunting current from the substrate.

Abstract: Silicon-based voltage reference circuits that generate a temperature independent voltage reference that is less than even the silicon bandgap potential. The voltage reference circuit includes a diode-connected metal-silicon Schottky diode that is biased with a current. In this configuration, the anode terminal of the Schottky diode is a CTAT voltage source in this configuration. The anode terminal has a voltage at zero degrees Kelvin at the barrier height of the Schottky diode, which may differ depending on the metal chosen, but in most cases is less than the bandgap potential of silicon. The voltage reference circuit also includes a PTAT voltage source. The PTAT voltage may be generated in a variety of ways. An amplifier amplifies the PTAT voltage, and a summer adds the CTAT voltage to the amplified PTAT voltage to generate the temperature stable voltage reference.

Abstract: A semiconductor integrated circuit device capable of avoiding noise generation and suppressing occurrence of an erroneous operation. Provided is a current limiting circuit where a current flowing in an output terminal of a charge pump circuit is sensed with a sensing resistor to be detected by a current detecting circuit to thereby cause an input current to constantly flow in an input terminal of the charge pump circuit in an amount approximately twice larger than an output current, whereby a current is kept constant to suppress a peak current and to avoid the noise generation. Consequently, other circuits connected to an input power source shared with the charge pump circuit are kept from erroneously operating.

Abstract: Bias controllers are provided which alter a bias control signal so that a bias signal (e.g., a current signal) of an electronic network rapidly responds to increases in the rate-of-change of the network's analog input signal. This enhances the linearity of a system that includes the electronic network. Subsequent decreases in the rate-of-change are sensed and a decrease of the bias control signal is then paced at a rate selected to ignore short-term rate-of-change variations (e.g., modulation variations) but follow longer-term rate-of-change reductions to thereby enhance system efficiency without sacrificing system linearity.

Abstract: A method of operating a memory system that includes an integrated circuit memory device is provided. A value representing an output voltage setting of an output driver of the memory device is stored in a register. The output driver outputs the drive voltage. A signal derived from the drive voltage is compared to a reference signal to generate a signal that indicates an adjustment to the output voltage setting. The output voltage setting of the output driver is adjusted using a counter that holds a count value representing an update to the output voltage setting. The count value is updated in accordance with a signal that indicates the adjustment to the output voltage setting.

Abstract: A system including an integrated circuit memory device. The integrated circuit device comprises a register to store a value representative of an output voltage setting. A circuit holds a value representative of an adjustment to the output voltage setting. An output driver outputs a drive voltage during a calibration operation, wherein a signal is generated based on a comparison between a signal derived from the drive voltage and a reference voltage. The signal updates the value representative of the adjustment to the output voltage setting.

Abstract: A bus switch has reduced input capacitance. Parasitic source-to-well and drain-to-well capacitors are shorted by well-shorting transistors, eliminating these parasitic capacitances. The well-shorting transistors are turned on when the bus-switch transistor is turned on, but are turned off when the bus-switch transistor is turned off and the bus switch isolates signals on its source and drain. The isolated P-well under the bus-switch transistor and the well-shorting transistors is not tied to ground. Instead the isolated P-well is floating when the bus-switch transistor is turned on. When the bus-switch transistor is turned off, the underlying isolated P-well is driven to ground by a biasing transistor in another P-well. Since the isolated P-well has a much lower doping than the N+ source and drain, the capacitance of the well-to-substrate junction is much less than the source-to-well capacitance. Thus input capacitance is reduced, allowing higher frequency switching.

Abstract: Methods and apparatus for testing a semiconductor structure requiring a precise core or operating voltage with an OBIRCH analysis arrangement. The separate power supply used for providing the precise core or operating voltage is eliminated, and is replaced by connecting a circuit comprised of a plurality of Schottky diodes connected in series across the constant voltage power supply used to provide the current for the OBIRCH analysis. A precise voltage is then tapped from an anode of the series connected Schottky diodes thereby significantly reducing effects of background noise on the OBIRCH analysis.

Abstract: A method and system of fractional biasing of semiconductors. A small negative voltage is applied to the back of a semiconductor wafer or device. An operating voltage is applied to the semiconductor. Operating characteristics of the semiconductor are enhanced by application of a fractional bias.

Abstract: The invention relates to a circuit arrangement which includes a subvoltage generating unit and a voltage multiplier for generating at least one voltage Vmult, it being arranged to control the voltage multiplier by switching the voltage multiplier to a direct mode during a start time. The invention also relates to an arrangement for driving a display device, to a display device which includes such an arrangement, to an electronic apparatus which is provided with a display device for the display of image data which includes an arrangement for driving the display unit, and to a method of starting a circuit arrangement 15 which includes a subvoltage generating unit 40, a voltage multiplier 20 and a start control unit 30.

Abstract: To provide a voltage generating circuit for generating a boosted voltage on the basis of a power source voltage or any voltage.

Abstract: As disclosed herein, systems and methods are provided for generating and distributing a plurality of reference currents on an integrated circuit. In a particular embodiment, an integrated circuit is disclosed which includes a reference current generator adapted to generate a plurality of reference currents. Such circuit includes an operational amplifier coupled to receive, at a first polarity input, a reference voltage, and a first transistor Q1 having a biasing input coupled to an output of the operational amplifier. The first transistor also has an output coupled to a fixed potential through a first resistor R1, and the output of the first transistor Q1 is further coupled as feedback to a second polarity input of the operational amplifier. One or more second transistors Qi are provided in the circuit, each of which has a biasing input coupled to the output of the operational amplifier, and an output coupled to the fixed potential through a respective second resistor Ri.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: In a semiconductor integrated circuit device, for realizing high speed, as well as superior product yield rate and usability, while reducing circuit scale and improving on product yield rate and reliability thereof, a main circuit, constructed with CMOS elements, is coupled to a speed monitor circuit for forming a speed signal corresponding to an operating speed thereof and to a substrate bias controller for supplying corresponding substrate bias voltages to the main circuit in response to the speed monitor circuit. A current limiting circuit is also provided in conjunction with the substrate bias controller to prevent an overflow of current due to bias voltage.

Abstract: A bias circuit which supplies a bias voltage to a first transistor comprises a second transistor formed on a same semiconductor substrate as the first transistor and having a control electrode and a first and a second main electrodes; a resistance circuit; and a first and a second level shifters. The second transistor is either a metal semiconductor field effect transistor or a high electron mobility transistor. One end of the resistance circuit is connected to a voltage supply, other end of the resistance circuit is connected to the first main electrode of the second transistor, the control electrode of the second transistor is connected to the second main electrode of the second transistor, the second main electrode of the second transistor is connected to a common voltage. A voltage at the first main electrode of the second transistor is divided by the first and second level shifters and the divided voltage is outputted as the bias voltage.

Abstract: A voltage booster device to selectively assume an active status and a stand-by status with a first terminal to assume a respective electric potential and associated to a first capacitor, a second terminal associated to a second capacitor and selectively connectable to the first terminal, and a discharge circuit for discharging the first capacitor thus reducing the electrical potential of the first terminal, the discharge circuit being activated when said device is in the stand-by status and the second terminal is disconnected from said first terminal.

Abstract: A charge pump control circuit may include a frequency synthesis device, a pump cell connected to the frequency synthesis device, and a feedforward circuit connected to the frequency synthesis device to selectively activate or deactivate the frequency synthesis device in response to a pump cell output signal.

Abstract: An on-chip circuit for defect testing with the ability to maintain a substrate voltage at a level more positive or more negative than a normal negative operating voltage level of the substrate. This is accomplished with a chain of MOSFETs that are configured to operate as a chain of resistive elements or diodes wherein each element in the chain may drop a portion of a supply voltage coupled to a first end the chain. The substrate is coupled to a second end of the chain. The substrate voltage level is essentially equivalent to the supply voltage level less the voltage drops across the elements in the diode chain. A charge pump maintains the substrate voltage level set by the chain. Performing chip testing with the substrate voltage level more negative than the normal negative voltage level facilitates detection of devices that will tend to fail only at cold temperatures.

Abstract: A semiconductor integrated circuit and power control method use one of a supply voltage of the circuit and a delay time of the circuit to control a substrate bias voltage applied to a substrate of an insulated gate field effect transistor. High speed operation, consuming a small amount of power, is achieved. A CMOS circuit has a widened operating voltage range, with reduced leak currents in a standby mode in a range of high supply voltage, reducing power consumption of the CMOS circuit, and increasing operating speed of the CMOS circuit in the range of low supply voltage.

Abstract: An on-chip circuit for defect testing with the ability to maintain a substrate voltage at a level more positive or more negative than a normal negative operating voltage level of the substrate. This is accomplished with a chain of MOSFETs that are configured to operate as a chain of resistive elements or diodes-wherein each element in the chain may drop a portion of a supply voltage coupled to a first end the chain. The substrate is coupled to a second end of the chain. The substrate voltage level is essentially equivalent to the supply voltage level less the voltage drops across the elements in the diode chain. A charge pump maintains the substrate voltage level set by the chain. Performing chip testing with the substrate voltage level more negative than the normal negative voltage level facilitates detection of devices that will tend to fail only at cold temperatures.

Abstract: A single mode buck/boost charge pump has multiple outputs and is adapted to power a plurality of separate loads, such as light emitting diodes, in a highly efficient manner. The multiple outputs have different voltages. The output current or voltage of at least one of the multiple outputs is regulated by a feedback circuit. The feedback circuit provides a control signal based on a comparison of a reference voltage with a feedback voltage. The feedback voltage is proportional to an output voltage when the charge pump is configured to regulate the output voltage. Alternately, the feedback voltage is a sense voltage across a sense resistor connected in series with a load when the charge pump is configured to regulate output current provided to the load.

Abstract: A voltage booster power supply circuit using a first voltage VDD3 and a second voltage VDDM to boost the first voltage VDD3, which is higher than the second voltage, to provide a boosted voltage VPP. Thus, a high efficiency of generation of a boosted voltage can be achieved compared with a configuration in which only the second voltage is used to boost the first voltage. A detector circuit detects the boosted voltage VPP to control a voltage booster circuit.

Abstract: A capacitive pump circuit suitable for use in loop powered level measurement and time of flight ranging systems. The capacitive pump circuit comprises an input buffer, a level shifter and an output stage. The input buffer receives a clocking signal which is also coupled to the input of the output stage through the level shifter. The output from the input buffer is switched by the output stage to charge a capacitor and generate a voltage output which has the opposite polarity of the voltage supply rail. According to another aspect, a capacitive voltage doubler circuit is provided which is also suitable for use in loop powered level measurement and time of flight ranging systems.

Abstract: Integrated circuits are provided that include a voltage control circuit that is configured to adjust a circuit voltage that is outside a predetermined circuit voltage specification to within the predetermined circuit voltage specification so that the integrated circuit device is no longer defective. Integrated circuits are also provided that include a signal time delay control circuit that is configured to adjust a circuit delay time that is outside a predetermined circuit delay time specification to within the predetermined circuit delay time specification so that the integrated circuit device is no longer defective. Corresponding methods of operation are also provided.

Abstract: In a semiconductor integrated circuit device, for realizing high speed, as well as superior product yield rate and usability, while reducing circuit scale and improving on product yield rate and reliability thereof, a main circuit, constructed with CMOS elements, is coupled to a speed monitor circuit for forming a speed signal corresponding to an operating speed thereof and to a substrate bias controller for supplying corresponding substrate bias voltages to the main circuit in response to the speed monitor circuit. A current limiting circuit is also provided in conjunction with the substrate bias controller to prevent an overflow of current due to bias voltage.

Abstract: A VDC circuit that supplies an internal voltage VDD1 to an internal circuit in a normal operation forces a transistor off in a burn-in test mode through input of a test signal to suppress supply of an external power supply voltage VDDH to a node. In a burn-in test mode, an external power supply voltage lower than external power supply voltage VDDH and higher than internal voltage VDD1 is supplied from an external pad.

Abstract: A semiconductor integrated circuit device includes a logic circuit to perform a predetermined process, a clock generator to supply a clock signal to the logic circuit, and a speed controller to control the operation speed of the logic circuit. The clock generator changes the frequency of the clock signal by a frequency control signal during a time when the logic circuit is operating, and the speed controller controls the operating speed of the logic circuit in accordance with a change in the clock signal.

Abstract: A level translating digital switch in which a switching element provides switching and level translation between a first system and a second system that operate using different logic supply voltages. In a situation where the supply voltage for the first system is larger than the supply voltage for the second system, the switching element is driven by a voltage lower than the logic supply voltage of the first system.

Abstract: An on-chip circuit for defect testing with the ability to maintain a substrate voltage at a level more positive or more negative than a normal negative operating voltage level of the substrate. This is accomplished with a chain of MOSFETs that are configured to operate as a chain of resistive elements or diodes wherein each element in the chain may drop a portion of a supply voltage coupled to a first end the chain. The substrate is coupled to a second end of the chain. The substrate voltage level is essentially equivalent to the supply voltage level less the voltage drops across the elements in the diode chain. A charge pump maintains the substrate voltage level set by the chain. Performing chip testing with the substrate voltage level more negative than the normal negative voltage level facilitates detection of devices that will tend to fail only at cold temperatures.

Abstract: A charge pump device for supplying a boosted voltage to a memory device includes a charge pump part constructed with first to nth unit charge pumps, and a multi-level detector for detecting a level of a boosted voltage to selectively drive the unit charge pumps in accordance with an amount of power consumption of the host and thereby outputting at least one level detection signal.

Abstract: A voltage multiplier circuit in particular for programmable memories is supplied by a low voltage. This circuit includes an oscillator which generates a clock signal and a charge pump circuit controlled by the clock signal. The charge pump boosts a DC supply voltage to a high voltage which is looped back to a voltage feedback regulator. A multiplexer which is placed between the oscillator and the charge pump, receives a gating signal from the regulator which depends on the comparison of the high output voltage to a determined regulation voltage.

Abstract: In order to stably generate a high voltage of a prescribed level, a Vpp detection circuit which is activated in response to an activation signal for comparing the high voltage with a reference voltage is forcibly brought into an active state for a prescribed period under control of an initial control circuit.

Abstract: A start up circuit includes: a diode Q0; a first transistor Q1 coupled in series with the diode Q0; a first resistor R4 coupled in series with the first transistor Q1; a second transistor Q2 having a control node coupled to a control node of the first transistor Q1 and coupled to a node between the first transistor Q1 and the first resistor R4; and a second resistor R2 coupled in series with the second transistor Q2 such that a current in the second transistor Q2 is independent of a voltage applied across the diode Q0, the first transistor Q1, and the first resistor R4.

Abstract: A semiconductor memory device is provided with a power supply circuit. The power supply circuit includes a reference voltage generating circuit which generates a first reference voltage, a booster circuit which generates a first internal power supply voltage by boosting an external power supply voltage using the first reference voltage, another reference voltage generating circuit which generates a second reference voltage, and a VDC circuit which generates a second internal power supply voltage by down-converting the first internal power supply voltage to a voltage level of the second reference voltage. The generated second internal power supply voltage is supplied to a DLL, and the DLL generates a periodic signal having a phase corresponding to the voltage level of the second internal power supply voltage.

Abstract: Upon generating an inversion input signal to be inputted to a level shifter section in an inverter section, a voltage VHL, which gives an output voltage of a high level in the inverter section, is generated by a resistance division from the power supply voltages VHH and VLL in a voltage-dividing section. Thus, it becomes possible to provide a level shift circuit which can realize a reduction in the number of terminals and low power consumption by using a simple circuit construction.

Abstract: A digitally programmable DC voltage generator system having a programming circuit for controlling a control circuit of a voltage generator system. The programming circuit receives an input control signal, processes the input control signal, and generates an output control signal to the control circuit of the voltage generator system for controlling the control circuit in accordance with the input control signal. The control circuit includes a limiter circuit and an oscillator circuit. The output control signal controls at least one of the limiter circuit for disabling the oscillator circuit upon reaching a target output voltage, and the oscillator circuit for controlling the pumping speed of the oscillator circuit.

Abstract: Integrated circuit devices are provided that include power detection circuits that indicate whether power supplies have reached functional voltage levels. The power detection circuits include latches coupled to power supplies that can detect whether all the power supplies have reached functional voltage levels, logic circuits to provide appropriate output signals, and well bias circuits that supply current to the power detection circuits. Well bias circuits provide current from first power supplies to reach functional voltage levels so that indication may be provided from the power detection circuit without requiring functional voltage levels of all power supplies. Outputs from power detection circuits can be combined with control signals, for various applications. Applications include holding an integrated circuit device in reset until power supplies have reached functional voltage levels.

Abstract: In operation, a charge pumping circuit supplies negative charges to an internal voltage line so as to reduce a negative internal voltage. A voltage dividing circuit produces a control voltage according to the difference between a first positive voltage externally applied to a first input terminal in the test mode and the internal voltage. A comparison circuit operates the charge pumping circuit according to the comparison result between a second positive voltage externally applied to a second input terminal in the test mode and the control voltage. The second positive voltage is set according to a target value of the negative internal voltage.

Abstract: This invention provides a new standby mode circuit design which reduces the power dissipation of static random access memory, SRAM circuitry. The circuit and method of this invention provides a reduced power supply voltage to SRAM memory cells so as to reduce the power dissipation of memory cells, while utilizing the full power supply voltage for the SRAM bit line and peripheral circuitry so as to preserve memory access performance.

Abstract: In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Abstract: In an integrated circuit having an on-chip power supply, a voltage maintenance circuit includes a decoupling capacitor connected between the output node and ground, a supplementary capacitor connected between a supplementary node and ground and a controllable transistor connected between the two capacitor nodes, so that when the output voltage drops below a threshold a reference circuit turns on the controllable transistor, thereby supplying extra charge to the output node and restoring it to its design voltage more quickly than the power supply could.

Abstract: When the substrate bias voltage Vbb lowers by the pumping operation of the charge pump circuit, a drain-to-source resistance of the N-transistor becomes high. When a first power supply voltage Vcc is set at high value, a drain-to-source current of the N-transistor increases (I+&Dgr;I1), however the drain-to-source current decreases (I+&Dgr;I1−&Dgr;I2) by the increase of the drain-to-source current owing to the substrate bias effect so that the increase of the potential of the node N34 caused by the increase of the first power supply voltage VCC is restrained. As a result, a reference level of the substrate bias voltage Vbb does not largely lower than the reference level of the substrate bias voltage Vbb when the first power supply voltage VCC is in a standard level.