Abstract: In an apparatus for encrypting an information signal into an encryption-resultant signal, a first encryption key peculiar to the present apparatus is generated. Key information is read out from a replaceable recording medium. A decision is made as to whether or not the read-out key information has been generated by an apparatus different from the present apparatus. A second encryption key is generated in response to the read-out key information when it is decided that the read-out key information has been generated by an apparatus different from the present apparatus. One is selected from the first encryption key and the second encryption key as a final encryption key. An information signal is encrypted in response to the final encryption key.

Abstract: A short-circuit charge-sharing technique which allows charge-sharing between two or more circuits with a simple shorting transistor controlled to achieve the desired operating voltage levels. The shorting transistor which can be either a P-channel Metal Oxide Semiconductor (PMOS) or an N-channel Metal Oxide Semiconductor (NMOS) device and can be controlled utilizing the same clock that enables the drive of the signals between which charge-sharing occurs. In operation, the desired operating voltage levels can be regulated by increasing and decreasing the pulse width of the control circuit output to the gate of the shorting transistor.

Abstract: A leakage current control circuit with a single low voltage power supply is provided. The circuit includes a first power supply line, a second power supply line, a ground line, a high voltage generating circuit, a power transistor and a control circuit. The high voltage generating circuit generates a voltage in response to an internal sleep signal. The gate electrode of the power transistor is connected to the output of the high-voltage generating circuit such that the power transistor is controlled by the high voltage generating circuit. When the power transistor turns on, the circuit is in operation mode; when the power transistor is off, the circuit is in sleep mode. The control circuit connects to the first power line, the second power line, and the ground line to output the internal sleep signal in response to the sleep signal.

Abstract: A semiconductor integrated circuit device comprises: a circuit block, a first MOS transistor, a first power line, a second power line, a third power line, and a drive circuit. The first MOS transistor is connected between the first and second power lines. The circuit block is connected between the second and third power lines. The drive circuit controls a voltage supplied to a gate of the first MOS transistor. The first MOS transistor is off in a standby state and on in an operation state. During a shift from the standby state to the operation state and a shift from the operation state to the standby state, the drive circuit changes the voltage supplied to the gate of the first MOS transistor at a first rate, and then, changes the voltage supplied to the gate of the first MOS transistor at a second rate faster than the first rate.

Abstract: A semiconductor integrated circuit apparatus and an electronic apparatus having a power control function configured from power control MOS transistors such that leakage current and on-resistance at the time of cut-off is sufficiently small in actual use. The semiconductor integrated circuit apparatus includes a CMOS logic circuit, a first pseudo power supply line connected to a high potential side power supply terminal of the CMOS logic circuit, a second pseudo power supply line connected to a low potential side power supply terminal of the CMOS logic circuit, and a power control NchMOS transistor connected across the second pseudo power supply line and a low potential side power supply line, with the substrate and gate of the power control NchMOS transistor being electrically connected. The gate and the substrate may also be connected via a current limiter utilizing a source follower of a depletion type NchMOS transistor.

Abstract: A power noise immunity circuit includes a unidirectional device and a switch both connected between a power input terminal and a power output terminal, and a noise detector to control the switch. The power input terminal is for being connected to an external voltage source, and the power output terminal is for being connected to the circuit of an IC. The switch is normally closed and is opened by the noise detector if the noise detector detects power noise at the power input terminal. The power noise immunity circuit thus prevents the IC from power breakdown and provides a stable voltage thereto.

Abstract: A latch-up protection device is provided. The latch-up protection device includes a first transistor, a detection module, and a processing module. The first transistor includes a first source/drain coupled to a pad, a body and a second source/drain coupled to a first voltage, and a gate. The detection module is adapted for detecting a terminal voltage between the first source/drain and the second source/drain of the first transistor, and generating a first signal when the terminal voltage is greater than a trigger voltage. The processing module is coupled between the detection module and the gate of the first transistor, for conducting a logic processing to the first signal, and generating an enable signal to the gate of the first transistor to conduct the first transistor.

Abstract: A stable voltage generating circuit for a delay locked loop for generating a stable internal voltage for a delay locked loop and a semiconductor memory device including the same, and a method of generating a stable voltage for a delay locked loop is disclosed. The voltage generating circuit includes a first detector which compares a feedback voltage that represents the internal voltage for the delay locked loop with a reference voltage and outputs the comparison result as a first detection signal. A second detector detects the escape timing of a power down mode to provide a second detection signal having a configurable enable width interval after the escape timing of the power down mode. Finally, the voltage generating circuit includes a voltage driver which drives and outputs the internal voltage either the first detection signal or the second detection signal is enabled to maintain a stable internal voltage level.

Abstract: A design structure of a circuit for managing voltage swings across FETs comprising a reference precision resistor, a first and second FET, wherein a gate of the first FET is tied to a gate of the second FET, wherein a drain to source resistance of the second FET is substantially equal to or is a multiple of a resistance of the reference precision resistor, and wherein a gate voltage of the second FET is applied to a gate of the first FET to set a bias point of the first FET, and a third FET cascoded to the first FET, wherein a source of the first FET is coupled to the drain of the third FET to extend a voltage range in which respective gate voltages of the first and third FETs maintain a linear relationship with respective drain to source voltages of the first and third FETs.

Abstract: A circuit for managing voltage swings across FETs comprising a reference precision resistor, a first FET and a second FET, wherein a gate of the first FET is tied to a gate of the second FET, wherein a drain to source resistance of the second FET is substantially equal to or is a multiple of a resistance of the reference precision resistor, and wherein a gate voltage of the second FET is applied to a gate of the first FET to set a bias point of the first FET, and a third FET cascoded to the first FET, wherein a source of the first FET is coupled to the drain of the third FET to extend a voltage range in which respective gate voltages of the first FET and the third FET maintain a linear relationship with respective drain to source voltages of the first FET and the third FET.

Abstract: A design structure for a loop filter in a phase lock loop circuit comprising a reference precision resistor, a first and second FET, wherein the gate of the first FET is tied to the gate of the second FET, and a filter capacitor connected to the first FET for producing a capacitor voltage. The capacitor voltage is applied to the source of the first FET, the source of the second FET, and the bottom of the reference precision resistor acting as a virtual ground. The capacitor voltage generated by the filter capacitor sets the bias point of the second FET such that the second FET comprises characteristics of an integrated precision resistor. A predetermined voltage generated by the second FET is applied to the gate of the first FET to set the bias point of the first FET such that the first FET comprises characteristics of an integrated precision resistor.

Abstract: Transistors having large gate tunnel barriers are used as transistors to be on in a standby state, MIS transistors having thin gate insulating films are used as transistors to be off in the standby state, and main and sub-power supply lines and main and sub-ground lines forming a hierarchical power supply structure are isolated from each other in the standby state so that a gate tunnel current is reduced in the standby state in which a low power consumption is required. In general, a gate tunnel current reducing mechanism is provided for any circuitry operating in a standby state and an active state, and is activated in the standby state to reduce the gate tunnel current in the circuitry in the standby state, to reduce power consumption in the standby state.

Abstract: An input buffer protection circuit is disclosed which comprises a NMOS transistor with a source, drain and gate coupled to an input terminal of the input buffer, a pad and a chip peripheral positive power supply voltage (VDDP), respectively, and a PMOS transistor with a source, drain and gate coupled to the pad, the input terminal of the input buffer and a first terminal of a biasing circuit, respectively, wherein the biasing circuit has a second terminal coupled to the pad and generates at the first terminal a voltage lower than the pad's input signal voltage (VPAD) to turn on the PMOS transistor when the VPAD is lower than or equal to the VDDP, or a voltage substantial equals to the VPAD to turn off the PMOS transistor when the VPAD is higher than the VDDP.

Abstract: In the current drive section, a wiring for setting a substrate potential is separately provided from a wiring of a power potential VDD so that substrate potentials of P-channel MOS transistors within respective drive cells become the same regardless of the distance from the power pad (power potential VDD) to each drive cell.

Abstract: A reference voltage generating circuit for producing a predetermined reference voltage at an output node includes a depletion-type n-channel field-effect transistor serving as a first field-effect transistor having one node thereof coupled to a power supply voltage, a second field-effect transistor having one node thereof coupled to another node of the first field-effect transistor and having a highly-doped n-type gate, and a third field-effect transistor having one node thereof coupled to another node of the second field-effect transistor, another node thereof coupled to a ground voltage, and a highly-doped p-type gate.

Abstract: An exemplary circuit embodiment includes a depletion-mode transistor and an enhancement-mode transistor. The circuit also includes a circuit portion coupled to a gate region of the depletion-mode transistor and to a gate region of the enhancement-mode transistor. In this embodiment, the circuit portion is configured to provide a reference voltage at an output node, wherein the reference voltage is associated with a difference between a voltage at the gate region of the depletion-mode transistor and a voltage at the gate region of the enhancement-mode transistor.

Abstract: A logic gate is constructed of an insulated gate field effect transistor (MIS transistor) having a thin gate insulation film. An operation power supply line to the logic gate is provided with an MIS transistor having a thick gate insulation film for switching the supply and stop of an operation power source voltage. A voltage of the gate of the power source switching transistor is made changing in an amplitude greater than an amplitude of an input and an output signal to the logic gate. Current consumption in a semiconductor device configured of MIS transistor of a thin gate insulation film can be reduced and an power source voltage thereof can be stabilized.

Abstract: A power (voltage) switching circuit in a semiconductor memory device, capable of reducing leakage current in a standby mode of operation and shortening the wake-up time when a standby mode is switched to an operation mode. The power (voltage) switching circuit comprises a first power switch, a second power switch, and a third power switch operatively connected to at least one bitline in a memory cell array, configured to selectively output, as a cell power voltage, a dynamically selected one of a first power supply voltage, a second power supply voltage, and a third power supply voltage, respectively in response to a first, second or third applied switch control signals. The second power supply voltage being higher than the first power supply voltage and, the third power supply voltage being lower than the first power supply voltage.

Abstract: A bandgap reference circuit is proposed. To remove parasitic effects, this includes the combination of a first circuit section (1), which generates a temperature-proportional voltage, and a second circuit section (2), which generates an inversely temperature-proportional voltage. The bandgap reference circuit generates a bandgap reference voltage (Ubg) as the sum of the temperature-proportional voltage of the first circuit section (1) and the inversely temperature-proportional voltage of the second circuit section (2). To remove the parasitic effects, both circuit sections (1, 2) include bipolar transistor circuits with multiple bipolar transistors (Q1-Q4; Q5-Q8), so that both the temperature-proportional voltage and the inversely temperature-proportional voltage are generated in the form of a sum and difference formation of multiple base-emitter voltages of the appropriate bipolar transistors.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: A high voltage switching circuit of a NAND type flash memory device that includes a clock level shifter for increasing an amplitude of a clock signal, a pass voltage generator for outputting a pass voltage by pumping a power source voltage in response to a clock signal with an increased amplitude, and a high voltage pass transistor for transferring a high voltage according to the pass voltage.

Abstract: A system and method are implemented for preventing regulated supply undershoot in state retained latches of a leakage controlled system, using a voltage source depending on a reference voltage that includes a decay to resolve undesirable undershoot.

Abstract: As the chip manufacturing process progresses towards making smaller and finer chip circuitry, leakage currents of different types including the subthreshold leakage current, gate tunneling leakage current and GIDL (Gate-Induced Drain Leakage) current increase. These leakage currents increase the electrical current consumption of the chip. In a semiconductor integrated circuit device comprising a circuit block having a first MOS transistor, and a leakage current control circuit having a second MOS transistor and a current source, a source and drain circuit of the second MOS transistor is formed between the power supply line of the circuit block and a voltage point where operating voltage is supplied.

Abstract: A two phase internal voltage generator at least includes a first phase internal voltage generator and a second phase internal voltage generator. The power consumption of the second phase internal voltage generator is relatively lower than that of the first phase internal voltage generator. The first phase internal voltage generator promptly generates and provides a first internal voltage source when an external power is provided. As a second internal voltage source that is provided by the second phase internal voltage generator is stable, the first phase internal voltage generator cuts off the supply of the first internal voltage source. The present invention prevents the problem to major power consumption for conventional internal voltage generator.

Abstract: A regulator system includes a power device and a sense device. During a normal operating mode, the power device is arranged to deliver current to a load, while the sense device is arranged to monitor the load current. An over-current mode is activated when the sensed load current exceeds a short-circuit current-limit. During the over-current mode, the power device is switched off such that the energy loss is minimized. Once the short-circuit condition is removed, the regulator system returns to the normal operating mode. The sense device is coupled to the load in such a way that the quiescent current of the regulator system does not rise with increasing load current. The regulator system is further arranged such that the short-circuit current-limit decreases automatically with increased operating temperature. The described regulator system has significantly reduced energy losses while also minimizing risks of thermal induced device failures during the short-circuit condition.

Abstract: A circuit for discharging a high voltage signal to a supply voltage line. In one embodiment, the circuit includes a first switch receiving the high voltage signal; a second switch having an input coupled with the output of the first switch; and a third switch having an input coupled with the output of the second switch and having an output coupled with the supply voltage line. In this embodiment, the high voltage signal discharges to the supply voltage line when the first, second, and third switches are on. The circuit may include a fourth switch for clamping the high voltage signal to ground. The fourth switch may have a control coupled with the output of the first switch along a discharge path such that when the high voltage signal is discharging and approaches a voltage level of approximately ground, the fourth switch automatically turns on and clamps the high voltage signal to ground level.

Abstract: In accordance with an aspect of an input/output device for providing fast translation between differential signals from a core of an integrated circuit and higher voltage signals that are external to the core, an I/O buffer includes low voltage devices for receiving core input signals, a cascode stage for setting a bias between the input devices and an output stage, and an output stage including a current mirror for providing a translated external output. Another aspect of the invention further includes a feedback path to cut off the current mirror to prevent static current and a keeper device to maintain an output level after cut off of the current mirror.

Abstract: A circuit for generating a trim bit signal in a flash memory device, comprises a control unit selected by a trim bit select signal and including a programmable and erasable cell, and an output unit for outputting a High level signal or a Low level signal through the trim bit signal output terminal depending on the program cell of the control unit.

Abstract: A bias potential generating apparatus for generating a plurality of bias potentials by switching with a standby potential set for each bias potential is disclosed. The generated potential is restored to a bias potential from a standby potential by a potential restoration circuit. A drive control circuit controls the drive operation of the potential restoration circuit. The potential restoration circuit is provided for each bias potential. Further, the drive time of the potential restoration circuit is set arbitrarily by a drive time setting circuit.

Abstract: A dual output voltage regulator circuit includes a first voltage regulator section, the first voltage regulator section having a first regulated voltage output, a second voltage regulator section coupled to the first voltage regulator section, the second voltage regulator having a second regulated voltage output, and a switching circuit coupled to the first voltage regulator section and to the second voltage regulator section, the switching circuit operating the first voltage regulator section and the second voltage regulator section in a normal mode, and operating only the second voltage regulator section in a power gating mode.

Abstract: The invention concerns a load pump device able to provide a constant current, respectively positive or negative, over an extremely wide output voltage range. A symmetrical switching system activates a first operational amplifier (AOP1) associated with the positive current source or a second amplifier (AOP2) associated with the negative current source according to predetermined threshold values (Vref), the first amplifier being provided so as to restore the behavior of the current mirror (M2, M1) generating a positive current when the output voltage of the device approaches the feed voltage (VDD) and the second amplifier being provided so as to restore the behavior of the current mirror (M4, M3) generating a negative current when the output voltage of the device approaches the earth (GND), thus allowing the output current of the device to be always constant and equal to a reference value (Iref).

Abstract: An output driver includes a predriver circuit coupled to a complimentary MOS transistor pair. Third and fourth complimentary MOS transistors are coupled between a source-drain pair of the first and second MOS transistors, respectively and an output. The back gate of at least one of the third and fourth transistors is coupled to the output to provide a lower VT at the beginning of a transition without creating excessive undershoot or overshoot. A diode is coupled in parallel with the source-drain paths of the third and fourth transistors.

Abstract: In a semiconductor integrated circuit device, a circuit block has a first MOS transistor, and a leakage current control circuit having a second MOS transistor and a current source, a source and drain circuit of the second MOS transistor is formed between the power supply line of the circuit block and a voltage point where operating voltage is supplied. This current source is connected to the power supply line and in a first state, the power supply line is driven to a first voltage by the second MOS transistor. In a second state, the power supply line is controlled at a second voltage by current flow in the current source and, the voltage applied across the source and drain of the first MOS transistor in the second state is smaller than the voltage applied across the source and drain of the first MOS transistor in the first state.

Abstract: A resistance dividing circuit having the same voltage-dividing ratio as that of a voltage dividing circuit provided in a voltage-dividing voltage down-converting circuit divides a reference voltage employed in a direct feedback voltage down-converting circuit. The divided voltage is employed as the reference voltage for the voltage-dividing voltage down-converting circuit. A comparator cancels out temperature dependency of the resistance dividing circuit and the voltage dividing circuit by differential amplification, so that internal power supply voltages are identical in temperature dependency to each other. Thus, the internal power supply voltages generated by the direct feedback voltage down-converting circuit and the voltage-dividing voltage down-converting circuit have no difference in temperature dependency from each other.

Abstract: A method and structure for supply gating low power electronic components uses low threshold gating transistors. The low power components operate at supply voltages of less than one volt and typically in the range of 150 to 400 millivolts. Using low threshold gating transistors, the leakage current of the devices, and therefore the standby power dissipation, can be minimized by using any one, or a combination of, four methods including: overdriving the low threshold gating transistors on; overdriving the low threshold gating transistors off; combining very low threshold device transistors with low threshold gating transistors; and providing the low threshold gating transistors with back bias.

Abstract: A low-dropout regulator comprises a high-gain error amplifier having a differential input stage and a single-ended output, a high-swing high-positive-gain second stage with input connecting to the output of the error amplifier and a single-ended output, a p-type MOS transistor with gate terminal connecting to the output of the second stage, source terminal connecting to the supply voltage, and drain terminal to the output of the low-dropout regulator. A first-order high-pass feedback network connects the output of the low-dropout regulator and the positive input of the error amplifier, and a damping-factor-control means comprising a negative gain stage with a feedback capacitor connects the input and output of this gain stage. A capacitor is connected between the output of the error amplifier and the output of the low-dropout regulator, while a voltage reference connects to the negative input of the error amplifier.

Abstract: Disclosed is a bias circuit having a start-up circuit. The bias circuit having a start-up circuit has a bias circuit part using a current mirror circuit, and for generating a constant bias voltage to an output node from an application of a power source voltage, and a start-up circuit part having a capacitor connected between the output node and a common node of in common connecting gates of MOS transistors constructing the current mirror circuit. Accordingly, the bias circuit prevents noise delivered from a power source voltage and power consumption due to static currents, and eliminates the oscillation possibility with stability improved in a high frequency range.

Abstract: A threshold compensating circuit generates a bias potential VBIAS, that is, a threshold voltage of a MOS transistor offset by a given value. A gate-source voltage having compensation for variation in threshold voltage is thus applied to a transistor. By using a differential amplifier having this transistor as a current source, a voltage down-converter less susceptible to variation in threshold voltage caused by process variation and temperature can be implemented.

Abstract: An apparatus and a method for compensating the drain current degradation in pMOS transistors are disclosed. The pMOS transistor receiving drain current compensation is a primary pMOS transistor. The apparatus comprises of a plurality of pMOS transistors subject to drain current degradation correlating to drain current degradation of the primary pMOS transistor, at least one compensation pMOS transistor coupled in parallel with the primary pMOS transistor, and an output voltage decoder to activate one or more of the compensation pMOS transistors to compensate for the drain current degradation of the primary pMOS transistor based on monitored drain current degradation of the plurality of pMOS transistors.

Abstract: A current mirror circuit provides an excellent current that does not deteriorate, even when the power source is a lower supply voltage. A mirror current flows in a first MOS transistor when a constant current flows in the MOS transistor from a current source. A subtracter outputs the difference between voltage Vg1 of the gate of the MOS transistor and voltage Vd1 of the drain, and applies this difference to the gate of a second MOS transistor. When the power-supply voltage of this circuit becomes a lower supply voltage and the absolute value of Vd1 decreases, the MOS transistors enter the triode region, and the mirror current decreases. When the absolute value of Vd1 decreases, because the difference between Vg1 and Vd1 becomes larger, the drain current of the second MOS transistor increases, and the amount by which the mirror current decreases is counterbalanced.

Abstract: A semiconductor memory module with a changeover device by which an internal voltage supply circuit can be switched on or off in a simple manner. The changeover device has two evaluation circuits, one evaluation circuit being used for switching on the voltage supply and the second evaluation circuit being used for switching off the voltage supply. In this way, the two evaluation circuits can be optimized with regard to functionality, circuit layout and current consumption.

Abstract: A semiconductor integrated circuit comprises a power supply voltage step down circuit and a MOS circuit group. The power supply voltage step down circuit is supplied with a power supply voltage and controlled by a standby control signal indicating an operating state or a standby state. The power supply voltage step down circuit outputs a first internal power supply voltage lower than the power supply voltage to an internal power supply line when the standby control signal indicates the operating state, and outputs a second internal power supply voltage lower than the first internal power supply voltage to the internal power supply line when the standby control signal indicates the standby state. The MOS circuit group including one or more MOS transistors which are supplied with the first or second internal power supply voltage from the internal power supply line to operate.

Abstract: A dynamic low power reference circuit includes a reference source for generating a reference voltage and/or a reference current. The reference circuit further includes an activity detector configured to measure an activity level of at least a portion of another circuit coupled to the reference circuit and to generate a control signal representative of the activity level. A controller coupled to the reference source is configured to dynamically change an output impedance of the reference circuit in response to the control signal. The techniques of the present invention thus provide a reference circuit that is capable of dynamically changing an output impedance associated therewith, such that when activity on one or more nodes in the other circuit is detected within a time period, the output impedance of the reference circuit is at a first value which is sufficiently low so as to reduce the likelihood of noise being coupled onto the output of the reference circuit.

Abstract: A power supply circuit of the present invention includes: a current detection circuit connected between a first power supply voltage section for applying a first power supply voltage to a first electronic circuit and a second power supply voltage section for applying a second power supply voltage to a second electronic circuit, the current detection circuit having a monitor terminal for monitoring a current flowing from the first power supply voltage section to the second power supply voltage section; and a current compensation circuit connected to the first power supply voltage section and the monitor terminal, the current compensation circuit controlling a compensation current flowing from the first power supply voltage section to a ground based on the monitored current to compensate for current fluctuations caused by load fluctuations of the second electronic circuit.

Abstract: A power-down signal is encoded into a differential pair of lines between two chips. When the differential transmitter powers down, it enters a high-impedance state and floats the differential lines. A shunt resistor between a pair of differential lines equalize the voltages on the differential lines so they float to a same voltage when a differential transmitter is disabled and enters a high-impedance state. The condition of equal voltages on the differential lines is detected by an equal-voltage detector that generates a power-down signal when the differential lines are at equal voltages for a period of time. The period of time can be greater than the cross-over time during normal switching to prevent false power-downs during normal switching. Standard differential drivers can signal power-down using the high-impedance state, which is detected by equal voltages on the differential lines. A sensitive dual-differential amplifier and a simpler detector are disclosed.

Abstract: A semiconductor integrated circuit comprises a power supply voltage step down circuit and a MOS circuit group. The power supply voltage step down circuit is supplied with a power supply voltage and controlled by a standby control signal indicating an operating state or a standby state. The power supply voltage step down circuit outputs a first internal power supply voltage lower than the power supply voltage to an internal power supply line when the standby control signal indicates the operating state, and outputs a second internal power supply voltage lower than the first internal power supply voltage to the internal power supply line when the standby control signal indicates the standby state. The MOS circuit group including one or more MOS transistors which are supplied with the first or second internal power supply voltage from the internal power supply line to operate.

Abstract: In a composite IC in which integrated are a power transistor, a bipolar analog circuit and a MOS logic circuit, a load-driving semiconductor device is provided which is capable of certainly placing the power transistor into an off-condition at power-on for stopping the driving of a load. In the semiconductor device, a high-side switch MOS transistor, a charge pump, a bipolar analog circuit, a charge pump driving CMOS logic circuit, a level conversion CMOS logic circuit and a forcibly stopping bipolar transistor 90 are made in the form of an IC, and the forcibly stopping bipolar transistor receives, through its base terminal, a signal which inverts when a drive voltage exceeds a predetermined value to turn to an on-condition. This operation places the bipolar analog circuit into a driving-stopped condition.

Abstract: Transistors having large gate tunnel barriers are used as transistors to be on in a standby state, MIS transistors having thin gate insulating films are used as transistors to be off in the standby state, and main and sub-power supply lines and main and sub-ground lines forming a hierarchical power supply structure are isolated from each other in the standby state so that a gate tunnel current is reduced in the standby state in which a low power consumption is required. In general, a gate tunnel current reducing mechanism is provided for any circuitry operating in a standby state and an active state, and is activated in the standby state to reduce the gate tunnel current in the circuitry in the standby state, to reduce power consumption in the standby state.

Abstract: A method and structure for supply gating low power electronic components uses low threshold gating transistors. The low power components operate at supply voltages of less than one volt and typically in the range of 150 to 400 millivolts. Using low threshold gating transistors, the leakage current of the devices, and therefore the standby power dissipation, can be minimized by using any one, or a combination of, four methods including: overdriving the low threshold gating transistors on; overdriving the low threshold gating transistors off; combining very low threshold device transistors with low threshold gating transistors; and providing the low threshold gating transistors with back bias.

Abstract: A circuit for generating internal power voltage comprising: a comparison unit for comparing reference voltage and internal voltage; a buffer unit, its input terminal comprising CMOS inverters, for buffering an output signal of the comparison unit; a buffer control unit for controlling current flowing through the CMOS inverters of the buffer unit less than a predetermined amount in regular operations and for controlling current flowing through the CMOS inverters of the buffer unit more than a predetermined amount in active operation; a first current supply unit for supplying current according to an output signal of the buffer unit; and a load unit for generating internal voltage by current supply from the first current supply unit.