Abstract: A stacked chip system is provided to comprise a first chip, a second chip, a first group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one first VSS TSV, at least one first VDD TSV, a plurality of first signal TSVs and at least one first redundant TSV and a second group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one second VSS TSV, at least one second VDD TSV, a plurality of second signal TSVs and at least one second redundant TSV, wherein all the first group of TSVs are coupled by a first selection circuitry configured to select the at least one first redundant TSV and bypass at least one of the rest of the first group of TSVs, and wherein the at least one first redundant TSV and the at least second redundant TSV are coupled by a second selection circuitry configured to allow one of them to replace the other.

Abstract: A switch block circuit in a field programmable gate array is provided. The switch block circuit includes a configuration memory unit including first group memories and second group memories and a switching unit including first group switching transistors and second group switching transistors. The switch block circuit further includes a selection unit for correspondingly connecting the second group memories with the second group switching transistors depending on an operation mode. The switch block is efficiently reconfigurable depending on the intended use, and configuration memories unused in a specific operation mode may be applied to other purposes.

Abstract: A method for bypassing a defective through silicon via x in a group of n adjacent through silicon vias, includes receiving a plurality of relief signals to identify the defective through silicon via x, activating x?1 switch circuits to connect x?1 data circuits to through silicon vias 1 to x?1 in the group of n adjacent through silicon vias, activating n-x switch circuits to connect n-x data circuits to through silicon vias x+1 to n in the group of n adjacent through silicon vias, and activating a switch circuit to connect a data circuit to an auxiliary through silicon via which is adjacent through silicon via n in the group of n adjacent through silicon vias.

Abstract: Indexing a plurality of die obtainable from a material wafer comprising a plurality of stacked material layers. Each die is obtained in a respective position of the wafer. A manufacturing stage comprises at least two steps for treating a respective superficial portion of the material wafer that corresponds to a subset of said plurality of dies using the at least one lithographic mask through the exposition to the proper radiation in temporal succession. The method may include providing a die index on each die which is indicative of the position of the respective die by forming an external index indicative of the position of the superficial portion of the material wafer corresponding to the subset of the plurality of dies including said die and may comprise a plurality of electronic components electrically coupled to each other by means of a respective common control line.

Abstract: An input apparatus includes a touch plate, a film sensor, an electrode portion, and a wire portion. The touch plate has a front side touched by the finger in the finger manipulation. The film sensor is bonded to a rear side of the touch plate. The electrode portion and wire portion are provided on the film sensor and connected to each other. The touch plate is composed of a plurality of different members including at least a first member and a second member. The plurality of different members have respective dielectric constants and being layered and laminated, respectively, in a plate thickness direction of the touch plate. The plurality of different members have different dimension ratios in the plate thickness direction to provide different dielectric constants depending on the electrode portion and the wire portion and provide a uniform plate thickness over a whole of the touch plate.

Abstract: Provided is an integrated circuit (IC) having a stacked structure. The IC includes: a first IC having a power input terminal to which a power supply voltage is applied; and a second IC having a power input terminal connected to a ground terminal of the first IC, having a central node formed as the power input terminal of the second IC and the ground terminal of the first IC are connected to each other and to which a voltage is applied, and having a ground terminal connected to a ground source, wherein the power supply voltage is divided into first and second voltages that are respectively applied to the first and second ICs.

Abstract: A multi-chip package system includes a signal transmission line commonly coupled to a plurality of semiconductor chips to transfer data to/from the semiconductor chips from/to outside; and a termination controller suitable for detecting a loading value of the signal transmission line and controlling a termination operation on the signal transmission line based on the loading value.

Abstract: A system of interconnected chips comprising a multi-chip module (MCM) includes a first processor chip, a second processor chip, and an MCM package configured to include the first processor chip, the second processor chip, and an interconnect circuit. The first processor chip is configured to include a first ground-referenced single-ended signaling (GRS) interface circuit. A first set of electrical traces fabricated within the MCM package and configured to couple the first GRS interface circuit to the interconnect circuit. The second processor chip is configured to include a second GRS interface circuit. A second set of electrical traces fabricated within the MCM package and configured to coupled the second GRS interface circuit to the interconnect circuit.

Abstract: An input apparatus includes a touch plate, a decoration layer, a film sensor, an electrode portion, a wire portion, and a guard layer. The touch plate is a basal plate for finger manipulation. The decoration layer is on a front side of the touch plate to decorate the front side. The film sensor is bonded to a rear side of the touch plate. The electrode portion is on the film sensor. The wire portion is on the film sensor and connected to the electrode portion to transmit a signal outputted from the electrode portion. The guard layer contains a guard layer formation material to suppress an electrostatic capacity between the finger and the wire portion. The guard layer formation material is combined into the decoration layer such that the decoration layer and the guard layer are provided as a single integrated member.

Abstract: An embodiment integrated circuit includes a first capacitive element including a first metal-oxide-semiconductor (MOS) capacitor and a second capacitive element coupled in parallel with the first capacitive element, where the second capacitive element includes a second MOS capacitor. Also, the integrated circuit includes a third capacitive element coupled in parallel with the first capacitive element and the second capacitive element, where the third capacitive element includes a first metal-insulator-metal (MIM) capacitor and a fourth capacitive element coupled in parallel with the first capacitive element, the second capacitive element, and the third capacitive element, where the fourth capacitive element includes a second MIM capacitor.

Abstract: A stacked chip system is provided to comprise a first chip, a second chip, a first group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one first VSS TSV, at least one first VDD TSV, a plurality of first signal TSVs and at least one first redundant TSV and a second group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one second VSS TSV, at least one second VDD TSV, a plurality of second signal TSVs and at least one second redundant TSV, wherein all the first group of TSVs are coupled by a first selection circuitry configured to select the at least one first redundant TSV and bypass at least one of the rest of the first group of TSVs, and wherein the at least one first redundant TSV and the at least second redundant TSV are coupled by a second selection circuitry configured to allow one of them to replace the other.

Abstract: A switch circuit, a control circuit, a grounding wire and a control wire are formed on a substrate. The switch circuit connects an antenna terminal with one of multiple high frequency terminals. The control circuit outputs a control signal to the switch circuit. The grounding wire is disposed between the switch circuit and the control circuit and extends from a location proximate to an edge of the substrate to a location proximate to an opposite edge of the substrate. The control wire that carries the control signal is disposed between one end of the grounding wire and an edge of the semiconductor substrate.

Abstract: An integrated circuit includes core logic and a plurality of interface blocks disposed about a periphery of the core logic. A plurality of input or output (I/O) circuits is assigned to one of the plurality of interface blocks. The I/O circuits include external I/O circuits coupled to a device other than the integrated circuit and internal I/O circuits coupled to the integrated circuit. Each interface block includes a first plurality of I/O circuits disposed on a first side of the interface block and a second plurality of I/O circuits disposed on a second side of the interface block. Each interface block also includes interface logic for the interface block between the first plurality of I/O circuits and the second plurality of I/O circuits, and a logic hub that includes a clock distribution of minimal length that drives launch logic and capture logic to form the I/O circuits of the interface block.

Abstract: Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.

Abstract: A semiconductor element layer has a pixel region in which a plurality of photodiodes are provided and a peripheral circuit region in which a peripheral circuit for processing the device is provided, a power supply line to supply an electric power to the peripheral circuit, provided at a first side of the semiconductor element layer in the peripheral circuit region, a first wiring layer to supply the electric power to the power supply line, provided at a second side of the semiconductor element layer in the peripheral circuit region, and a plurality of first through-electrodes, provided in the peripheral circuit region and passing through the semiconductor element layer between the first side and the second side. At least a part of the first through-electrodes electrically connect between the power supply line and the first wiring layer.

Abstract: A semiconductor integrated circuit includes a semiconductor chip or a plurality of semiconductor chip stacked therein, wherein each semiconductor chip includes, a compatible mode selection unit configured to select a chip allocation signal allocated to the semiconductor chip, among a plurality of chip allocation signals inputted through a plurality of pads, in response to a stack package information, and an internal circuit configured to perform a given operation in response to the chip allocation signal selected by the compatible mode selection unit.

Abstract: An integrated circuit (IC) including a high-speed signal input pin, a common node, a high-speed signal output pin, and a core circuit is provided. The high-speed signal input pin and the high-speed signal output pin are disposed on a package of the IC. The common node and the core circuit are disposed in the IC. The common node is directly and electrically coupled to the high-speed signal input pin. The high-speed signal output pin is directly and electrically coupled to the common node. A high-speed signal input terminal of the core circuit is directly and electrically coupled to the common node.

Abstract: A Schottky diode having a current leakage protection structure includes a Schottky diode unit, a first isolation portion and a second isolation portion. The Schottky diode unit is defined in a substrate and includes a metalized anode, an active region having dopants of first conductive type, a cathode and at least one isolation structure. The first isolation portion having dopants of second conductive type is formed between substrate and active region, and the first isolation portion includes a first well disposed beneath active region, and a first guard ring surrounding active region and connecting to the first well. The second isolation portion having dopants of first conductive type is formed between substrate and the first isolation portion, and the second isolation portion includes a second well disposed beneath the first well, and a second guard ring surrounding the first guard ring and connecting to the second well.

Abstract: Apparatuses, multi-chip modules, capacitive chips, and methods of providing capacitance to a power supply voltage in a multi-chip module are disclosed. In an example multi-chip module, a signal distribution component may be configured to provide a power supply voltage. A capacitive chip may be coupled to the signal distribution component and include a plurality of capacitive units. The capacitive chip may be configured to provide a capacitance to the power supply voltage. The plurality of capacitive units may be formed from memory cell capacitors.

Abstract: A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.

Abstract: A multiple-patterned semiconductor device is provided. The semiconductor device includes one or more layers with signal tracks defined by masks and a structure for transferring a signal between signal tracks and repowering the signal.

Abstract: An integrated circuit includes an analog module, digital circuitry, and a border section. The analog module is susceptible to noise and is on a substrate of the integrated circuit. The digital circuitry generates the noise and is on the substrate. The border section is on the substrate and physically separates the analog module from the digital circuitry.

Abstract: Apparatuses and methods are disclosed, including an apparatus that includes a differential driver with charge injection pre-emphasis. One such apparatus includes a pre-emphasis circuit and an output stage circuit. The pre-emphasis circuit is configured to receive differential serial signals, and buffer the differential serial signals to provide buffered differential serial signals. The output stage circuit is configured to receive the buffered differential serial signals and drive the buffered differential serial signals onto differential communication paths. The pre-emphasis circuit is configured to selectively inject charge onto the differential communication paths to assist with a signal transition on at least one of the differential communication paths. Additional embodiments are disclosed.

Abstract: A through-silicon via self-routing circuit includes a plurality of through-silicon vias (TSVs) and a plurality of planar die. The plurality of planar die are connected by the plurality of TSVs. And each one of the plurality of planar die includes a built-in self-tester, a built-in self-routing switching network, and a core circuit. The built-in self-tester has a plurality of valid-bit leads and a plurality of through-silicon via leads to connect the plurality of TSVs. The built-in self-routing switching network is connected to the built-in self-tester, for selecting from the plurality of TSVs for conducting. The core circuit has a to plurality of I/O leads linked to the built-in self-routing switching network.

Abstract: A semiconductor integrated circuit apparatus includes: a plurality of column select signal lines extended in parallel to each other with a predetermined distance provided therebetween; a local I/O line arranged in a selected space among spaces formed between the respective column select signal lines; and an upper segment I/O line arranged to overlap the local I/O line and a local I/O line bar.

Abstract: Communication between chips is provided using a transmission line. Any one of the chips may tap into the transmission line, and communicate with another chip tapped into the transmission line by transmitting a radio frequency (RF) signal to the other chip via the transmission line or receiving an RF signal from the other chip via the transmission line. The transmission line may include a microstrip transmission line, a waveguide, a stripline transmission line, or another type of transmission line. The chips may use the transmission line to communicate data, control and/or clock signals with one another.

Abstract: An integrated circuit includes a semiconductor die including one or more switching circuits, a magnetic core having length and width, first and second metallic leads, and integrated circuit packaging material. The first metallic lead forms a first winding turn around a portion of the magnetic core, and the first metallic lead is electrically coupled to the semiconductor die. The second metallic lead forms a second winding turn around a portion of the magnetic core. The first and second winding turns are offset from each other along both of the width and length of the magnetic core. The integrated circuit is, for example, included in an integrated electronic assembly.

Abstract: Provided is an integrated circuit (IC) having a stacked structure. The IC includes: a first IC having a power input terminal to which a power supply voltage is applied; and a second IC having a power input terminal connected to a ground terminal of the first IC, having a central node formed as the power input terminal of the second IC and the ground terminal of the first IC are connected to each other and to which a voltage is applied, and having a ground terminal connected to a ground source, wherein the power supply voltage is divided into first and second voltages that are respectively applied to the first and second ICs.

Abstract: A method for enabling functionality in circuit designs utilizing colorless DPT M1 route placement that maintains high routing efficiency and guarantees M1 decomposability of a target pattern and the resulting circuit are disclosed. Embodiments include: determining a boundary abutting first and second cells in an IC; determining a side of a first edge pin in the first cell facing a side of a second edge pin in the second cell; determining a first vertical segment of at least a portion of the side of the first edge pin and a second vertical segment of at least a portion of the side of the second edge pin; designating an area between the first vertical segment and the boundary as a first portion of a routing zone; and designating an area between the second vertical segment and the boundary as a second portion of the routing zone.

Abstract: Apparatuses and methods are described that include a plurality of drivers corresponding to a single via. A number of drivers can be selected to operate individually or together to drive a signal through a single via. Additional apparatus and methods are described.

Abstract: Neuronal networks of electronic neurons interconnected via electronic synapses with synaptic weight normalization. The synaptic weights are based on learning rules for the neuronal network, such that a synaptic weight for a synapse determines the effect of a spiking source neuron on a target neuron connected via the synapse. Each synaptic weight is maintained within a predetermined range by performing synaptic weight normalization for neural network stability.

Abstract: An integrated circuit has a first and second voltage supply rails with first and second voltage levels and a gated voltage supply rail. Each of the circuit elements is connected either between the first and second voltage supply rails or between the gated rail and the second voltage rail. A source circuit structure comprising one or more circuit elements provides an input signal maintained at a static value during a power gated mode of operation. At least one recipient circuit structure requires receipt of the input signal at the static value during the power gated mode of operation. A distribution network comprises a first subset of circuit elements which pull their output to the first voltage level then the input signal has the static value, and a second subset of circuit elements which pull their output to the second voltage level when the input signal has the static value.

Abstract: A system for transmitting data includes a plurality of data lines configured to transmit the data and a transmitting chip configured to output the data to the data lines and perform a crosstalk prevention operation in response to a data pattern of the data to be transmitted through the data lines and array information of the data lines to prevent crosstalk from occurring in the data lines.

Abstract: A clock distribution system for a multi-bit latch. The clock distribution system may include a plurality of branches, each connected to a common clock input. Each branch may be driven by an input clock buffer. Each branch may be connected to clock inputs of a predetermined number of latch stages within the multi-bit latch. A predetermined number of clock branches may include a clock output buffer. The number of clock output buffers may be less than the total number of latch stages. In this manner the clock distribution system may reduce the feed through capacitance of the latch stages, which may mitigate the latch transition skew for each latch stage.

Abstract: A high frequency circuit device includes: two transmission lines having ends which are opposed to each other and are spaced from each other; a capacitor that is mounted on the end of one of the two transmission lines and has a lower face electrode acting as a mount face and an upper face electrode positioned higher than the lower face electrode; a resistor element that is provided on a region between the ends of the two transmission lines and connects the ends of the two transmission lines; and a connection conductor electrically connecting the upper face electrode of the capacitor and the other of the two transmission lines.

Abstract: A semiconductor integrated circuit includes a semiconductor chip or a plurality of semiconductor chip stacked therein, wherein each semiconductor chip includes, a compatible mode selection unit configured to select a chip allocation signal allocated to the semiconductor chip, among a plurality of chip allocation signals inputted through a plurality of pads, in response to a stack package information, and an internal circuit configured to perform a given operation in response to the chip allocation signal selected by the compatible mode selection unit.

Abstract: One of the critical design parameters occurs when a digital signal is converted into an analog signal. As the supply voltage drops to less than 2 times of threshold voltage to reduce leakage and save power, generating a relative large swing with a resistor-ladder DAC becomes more difficult. For a 5 bit DAC, 32 sub-arrays are used to select the appropriate voltage from the series coupled resistor network. Each sub-array uses p-channel transistors where the sub-array extracting the lowest voltage 700 mV only has a 100 mV of gate to source voltage. To compensate for the reduced gate to source voltage, the sub-arrays are partitioned into four groups. In each group, the p-channel width is increased from 2 um to 5 um, as the tap voltage drops from 1.2 V to 0.7 V. This allows the p-channel transistor with a small gate to source voltage to have a larger width thereby improving performance.

Abstract: A power transistor module including a power transistor with a first common power node, and a split control node. A first clip is connected to a portion of a second power node so that current through a first control segment of the control node is directed through a first transistor portion and through the first clip. A second clip is connected to another portion of the second power node so that current through a second control segment is directed through a second transistor portion and through the second clip. A ratio of an area of the first transistor portion to a combined area of the first and second portions is 5 percent to 75 percent. A shunt is coupled in series to the first clip. The shunt may be directly electrically connected to the first portion of the power transistor.

Abstract: Some embodiments provide capacitive AC coupling inter-layer communications for 3D stacked modules.

Abstract: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. The clock distribution network includes a plurality of clock distribution circuits, each being arranged on a respective one of the two or more strata for providing the global clock signals to various chip locations. Each of the plurality of clock distribution circuits includes a resonant circuit for providing stratum-to-stratum coupling for the clock distribution network. The resonant circuit includes at least one capacitor and at least one inductor.

Abstract: A coupling failure of a supply terminal or a ground terminal is easily detected. A diode is disposed between a supply terminal of a semiconductor device and a first I/O terminal so that the supply terminal is located on a cathode side, and the first I/O terminal is located on an anode side. A determination unit determines whether or not a voltage of the supply terminal is lower than a voltage of the first I/O terminal when a signal of high level equal to a supply voltage is input to the first I/O terminal.

Abstract: The present invention relates to technologies for integrated circuits and Large Area Integrated Circuits (LAICs), which are integrated circuits made from photo-repetition of one or several reticle image fields, stitched together on at least one lithographic process layer. It also relates to a specific class of LAIC that can connect to the contacts of other ICs placed on its surface, where specific contact detection algorithms means are disclosed.

Abstract: A method for detecting an attack in an electronic microcircuit comprises: forming the microcircuit in a substrate, forming in the substrate a first well electrically isolated from the substrate, by a second well and an embedded well, forming in the first and second wells a data processing circuit comprising a ground terminal formed in the first well and a power supply terminal formed in the second well, and activating a detection signal when a voltage at the ground or power supply terminal of the data processing circuit crosses a threshold voltage.

Abstract: Provided is a multi-layered semiconductor apparatus with improved heat diffusion and improved heat release. The multi-layered semiconductor apparatus (100) includes a plurality of layered semiconductor chips (20-1, 20-2) that each include at least one circuit region, and the circuit regions are arranged such that heat generated by the circuit regions as a result of the circuit regions being driven is spread out. The multi-layered semiconductor apparatus (100) further comprises a heat releasing section (50) that releases the heat generated by the circuit regions, and the circuit regions are arranged such that there is less thermal resistance between the heat releasing section and circuit regions that generate a greater amount of heat per unit area.

Abstract: The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.

Abstract: Disclosed herein is a semiconductor device that includes a signal wiring arranged on a first layer and extending over the circuit block or blocks in the first direction so as to reach the first circuit block and produce a free space above the first circuit block, the signal wiring being electrically connected to the first circuit block, a power-supply wiring arranged on a second layer and extending over the circuit block or blocks in the first direction so as to reach the first circuit block, the power-supply wiring supplying an operating voltage to the first circuit block and an auxiliary power-supply wiring being configured to enhance the operating voltage supplied by the power supply line, and the auxiliary power-supply wiring being formed in the free space produced by the arrangement of the signal wiring.

Abstract: In one embodiment, a method includes receiving an input signal in transmitter circuitry of a first semiconductor die and processing the input signal, sending the processed input signal to an isolation circuit of the die to generate a voltage isolated signal, and outputting the voltage isolated signal from the isolation circuit to a second semiconductor die coupled to the first semiconductor die via a bonding mechanism. Note that this second semiconductor die may not include isolation circuitry.

Abstract: Data can be stored even when the supply of a power source voltage is stopped. A semiconductor device includes a logic circuit to which a data signal is input through an input terminal; a capacitor having a pair of electrodes, one of which is supplied with a high power source potential or a low power source potential and the other of which is supplied with a potential of the input terminal of the logic circuit, so that data of the data signal is written as stored data to the capacitor; and a transistor for controlling conduction between the input terminal of the logic circuit and the other of the pair of electrodes of the capacitor, thereby controlling rewriting, storing, and reading of the stored data. The off-state current per micrometer of channel width of the transistor is lower than or equal to 100 zA.

Abstract: Provided is a semiconductor package which includes: a semiconductor substrate; a functional element that is disposed on one surface of the semiconductor substrate; a protection substrate that is disposed in an opposite side of that surface of the semiconductor substrate with a predetermined gap from a surface of the semiconductor substrate; and a junction member that is disposed to surround the functional element and bonds the semiconductor substrate and the protection substrate together, wherein the functional element has a shape different from a shape of a plane surrounded by the junction member in that surface of the semiconductor substrate, or is disposed in a region deviated from a central region of the plane surrounded by the junction member in that surface of the semiconductor substrate.

Abstract: There is provided a clock distribution network for synchronizing global clock signals within a 3D chip stack having two or more strata. On each of the two or more strata, the clock distribution network includes a clock grid having a plurality of sectors for providing the global clock signals to various chip locations, a multiple-level buffered clock tree for driving the clock grid and including at least a root and a plurality of clock buffers, and one or more multiplexers for providing the global clock signals to at least a portion of the buffered clock tree. Inputs of at least some of the plurality of clock buffers on each of the two or more strata are shorted together using chip-to-chip interconnects to reduce skewing of the global clock signals with respect to the various chip locations.