Abstract: A system for reducing noise in a chip is disclosed and may include a substrate, a first well disposed on top of the substrate, a second well and a third well that are both disposed within the first well, a first transistor disposed in the second well, a positive potential of a voltage source connected to a body of the first transistor, and a second transistor disposed in the third well. The first transistor is a PMOS transistor, and the second transistor is an NMOS transistor. A noisy voltage source may be coupled to a source of the first transistor. A body of the first transistor may be resistively coupled to the second well. The system may include a noisy voltage source, where a body and a source of the second transistor are both coupled to the noisy voltage source.

Abstract: An integrated circuit, including: (i) a power gated circuit which power supply is shut down during a low-power period; (ii) a retention circuit, coupled to the power gated circuit during at least a portion of a non-low-power period, the retention circuit is adapted to store, during the low-power period, state information reflecting a state of the power gated circuit before the low-power period started; (iii) a first portion of the power grid, coupled to the retention circuit and to a first end of a power supply switch, adapted to provide to the retention circuit a supply voltage during the low-power period and during a non-low-power period; wherein the power supply switch is open during the low-power period and is closed during the non-low-power period; and (iv) a second portion of the power grid, coupled to a second end of the power supply switch and to the power gated circuit; adapted to supply a gated supply voltage to the power gated circuit during the non-low-power period.

Abstract: A fuse circuit of a semiconductor integrated apparatus includes first and second fuse blocks. The first fuse block includes a first up fuse block where a first plurality of fuses are arranged and a first down fuse block where a second plurality of fuses are arranged. The second plurality of fuses comprises fewer fuses than the first plurality of fuses. The second fuse block includes a second up fuse block where a third plurality of fuses are arranged, the third plurality of fuses comprising the same number of fuses as the second plurality of fuses, and a second down fuse block that includes a fourth plurality of fuses, the fourth plurality of fuses comprising the same number of fuses as the first plurality of fuses. The first up fuse block is opposite the second up fuse block and the first down fuse block is opposite the second down fuse block.

Abstract: Embodiments of the present invention include hybrid microscale-nanoscale neuromorphic integrated circuits that include an array of analog computational cells fabricated on an integrated-circuit-substrate. The analog electronic circuitry within each computational cell connected to one or more pins of a first type and to one or more pins of a second type that extend approximately vertically from the computational cells. The computational cells are additionally interconnected by one or more nanowire-interconnect layers, each nanowire-interconnect layer including two nanowire sublayers on either side of a memristive sublayer, with each nanowire in each nanowire sublayer of an interconnect layer connected to a single computational-cell pin and to a number of nanowires in the other nanowire sublayer of the interconnect layer.

Abstract: A packaged integrated circuit device includes a substrate including a conductive pad thereon, and a chip stack including a plurality of chips on the substrate. A primary conductive line electrically connects the pad on the substrate to a conductive pad on one of the plurality of chips in the chip stack. Secondary conductive lines electrically connect the pad on the one of the plurality of chips to respective conductive pads on ones of the plurality of chips above and below the one of the plurality of chips in the chip stack. The primary conductive line may be configured to transmit a signal from the pad on the substrate to the pad on the one of the plurality of chips in the chip stack. After receiving the signal at the one of the plurality of chips, the secondary conductive lines may be configured to transmit the signal from the one of the plurality of chips to the ones of the plurality of chips above and below the one of the plurality of chips in the chip stack at a same time.

Abstract: A transient voltage suppressing (TVS) circuit with uni-directional blocking and symmetric bi-directional blocking capabilities integrated with an electromagnetic interference (EMI) filter supported on a semiconductor substrate of a first conductivity type. The TVS circuit integrated with the EMI filter further includes a ground terminal disposed on the surface for the symmetric bi-directional blocking structure and at the bottom of the semiconductor substrate for the uni-directional blocking structure and an input and an output terminal disposed on a top surface with at least a Zener diode and a plurality of capacitors disposed in the semiconductor substrate to couple the ground terminal to the input and output terminals with a direct capacitive coupling without an intermediate floating body region.

Abstract: An integrated circuit including type-1 cells and a type-2 cell is presented. The type-1 cells have poly lines with a default poly pitch. The type-2 cell has poly lines with a non-default poly pitch. A first boundary region has at least one isolation area that lies between the type-1 cells and the type-2 cell in the X-direction. The first boundary region includes at least one merged dummy poly line, wherein the at least one merged dummy poly line has a first portion that complies with the default poly pitch of the type-1 cells and a second portion that complies with the non-default poly pitch of the type-2 cell.

Abstract: A semiconductor device chip, semiconductor device system, and a method. One embodiment provides a semiconductor device chip including a device for determining whether the semiconductor device chip is to be placed in a current saving operating mode.

Abstract: A semiconductor device includes a first semiconductor chip, and a second semiconductor chip which includes a high-speed serial I/F circuit which transfers serial data between the high-speed serial I/F circuit and an external device through a serial bus and is stacked on the first semiconductor chip. A pad region in which pads (electrodes) for connecting the external device and the high-speed serial I/F circuit are disposed is provided along a first side of the second semiconductor chip which is the short side. A pad region in which pads for connecting an internal circuit included in the first semiconductor chip and the high-speed serial I/F circuit are disposed is provided along a second side of the second semiconductor chip which is the long side.

Abstract: A design structure. The design structure includes: a first set of FETs having a designed first Vt and a second set of FETs having a designed second Vt, the first Vt different from the second Vt; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and of the second monitor circuit; a control unit responsive to the compare signal and configured to generate a control signal regulator based on the compare signal; and an adjustable voltage regulator responsive to the control signal and configured to voltage bias wells of FETs of the second set of FETs, the value of the voltage bias applied based on the control signal.

Abstract: A delay circuit that includes a first delay cell oriented in a first orientation and a second delay cell oriented in a second orientation is described. In one embodiment, the first orientation is perpendicular to the second orientation. More specifically, in one embodiment, the first orientation is vertical and the second orientation is horizontal.

Abstract: The invention is directed to a method for clock distribution and VLSI circuits include a clock distribution network. In a method of the invention, a transmission lines are patterned as to connect a clock tree and a periodic waveform clock, preferably a sine waveform, is used to control clock skew, even at frequencies extending into the gigahertz range. In an exemplary embodiment of the invention, an overlay includes differential pairs of transmission lines that connect the drivers of a clock distribution tree. In preferred embodiments of the invention, an H-tree clock distribution scheme is overlayed with a spiral of transmission lines, each realized by a differential conductors and driven using a sinusoidal standing wave to distribute global clock signals into local regions of the chip. Each transmission line connects drivers in the H-tree that are at the same level of the H-tree.

Abstract: A multi-system module having a functional substrate includes a substrate comprising therein at least one control circuit units, and a plurality of main circuit units provided on one side surface of the substrate. The main circuit units are electrically connected to the control circuit unit, whereby the control circuit unit is used to manage the operation of the main circuit units. Via the above module structure, the substrate can improve the function of controlling multiple systems.

Abstract: A semiconductor device includes a first pad, a second pad and a third pad. The first pad and the third pad are electrically connected to each other. The first pad and the second pad are used for bonding. The second pad and the third pad are used for probing. According to this structure, Small size semiconductor device having high reliability even after a probing test can be provided.

Abstract: A main chip has a signal processing circuit for executing signal processing; a plurality of signal transmitting circuits for transmitting signals between the signal processing circuit and a signal transmitting circuit; and a control circuit for controlling operation/non-operation of the signal transmitting circuits in accordance with signal processing content of the signal processing circuit. Functional chips each have a signal processing circuit for executing auxiliary signal processing different from that of the signal processing circuit; and one or a plurality of signal transmitting circuits for transmitting signals between the signal processing circuit and the signal transmitting circuits. The main chip and the functional chips are stacked. The signal transmitting circuits and the signal transmitting circuit are non-contact-type signal transmitting circuits utilizing inductive coupling and are arranged so as to overlap when viewed from the stacking direction.

Abstract: An integrated circuit includes a trimming signal creating section, disposed downstream of a trimming circuit in which a number of fuses are arranged in alignment, creating a trimming signal corresponding to the trimming value on the basis of a signal output from said trimming circuit and arranges blown object fuses such that every two of the blown object fuses are interposed at least one un-blown fuses in the trimming circuit. An efficient arrangement of blowing points in addition to the above arrangement of blown object fuses can reduce the area occupied by the trimming circuit.

Abstract: In a programmable logic device having high-speed serial interface channels, a clock distribution network for providing one or more high-speed clocks to dynamic phase alignment circuitry of those high-speed serial interfaces includes at least one bus that is segmentable (e.g. using tristatable buffers). This allows the bus to be divided into different portions that can be connected to different clock sources when the high-speed serial interfaces are running at different speeds. In one embodiment, the segmenting elements (e.g., the aforementioned buffers) are located between selected channels (e.g., every fourth channel), limiting the size of the different segments. In another embodiment, segmenting elements are located between each channel, allowing complete user freedom in selecting the sizes of the segments. Thus, instead of providing a bus for every clock source, multiple clocks can be made available to different channels by segmenting a single bus.

Abstract: An integrated circuit with body-bias inputs coordinated by a switch at initial power application. A switch coupled to the N-well bias and P-type substrate bias lines of an integrated circuit selectively couples the substrate to ground or the substrate bias supply, depending upon the state of the bias supply lines. During power-up and the initial application of the N-well bias, the substrate is coupled to ground to prevent a leakage induce rise in the substrate potential. Upon sensing the presence of the substrate bias potential on the substrate bias line, the switch couples the substrate to the substrate bias line instead of ground. In another embodiment, a switch indirectly senses the availability of the substrate bias potential by sensing a charge pump enable signal.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate, one or more wells formed in the semiconductor substrate, one or more diffusion layers formed in the one or more wells, a plurality of interconnects formed in an interconnect layer, the one or more diffusion layers and the plurality of interconnects being connected in series to provide a coupling between a first potential and a second potential, and a comparison circuit coupled to one of the interconnects set at a third potential between the first potential and the second potential, and configured to compare the third potential with a reference potential, wherein a first interconnect of the plurality of interconnects that is set to the first potential is connected to at least a first well of the one or more wells and connected to a first diffusion layer of the one or more diffusion layers that is formed in the first well.

Abstract: A semiconductor die having a functional circuit (e.g., a memory array) and a decode circuit suitable for use in a stacked die semiconductor component (e.g., a random access memory component) is described. The decode circuit permits individual die in a stacked die structure to automatically determine their location or position in the stack and, in response to this determination, selectively pass one or more external control signals (e.g., chip select and clock enable signals) to the decode circuit's associated functional circuit based on inter-die connection patterns. This “self-configuring” capability permits all die designated for a specified functionality (e.g., a memory module including four vertically aligned die) to be uniformly or consistently manufactured. This, in turn, can reduce the cost to manufacture stacked die components.

Abstract: Clock skew can be reduced by suppressing fluctuation in wiring leads between the final stage clock buffers and the clock distribution circuit for supplying the clock. In view of attaining such reduction of clock skew, an upstream of the clock distribution circuit is formed in an H tree structure and the final stage is formed in a local fishbone structure. A plurality of main clock lines connected to the final stage buffer include a first main clock line and a second main clock line. The number of cell arrangement allowable rows where a plurality of first flip-flops for receiving the clock from the first main clock line are located is different from the number of cell arrangement allowable rows where a plurality first flip-flops for receiving the clock from the second main clock line are located.

Abstract: An integrated circuit comprising at least one signal path which is adapted to route at least one signal from an origin to a target block, said signal path comprising at least an adjustable driver circuit comprising an input and an output, which is adapted to receive an electric signal having a first signal power as an input signal and which is adapted to provide an electric signal having a second signal power as an output signal is provided. Furthermore, the integrated circuit comprises at least one interconnect having an ohmic resistance and an electric capacity and being adapted to route said electric signal having a second signal power to said target block. Furthermore, a method for manufacturing such an integrated circuit is provided.

Abstract: Compensation is provided for signal drop in bond wires of an integrated circuit (IC) while minimizing the number of external terminals in the IC package. A functional circuit provides an output signal (e.g., voltage) on a pad of the IC, which is connected to an external terminal on the package via a bond wire. A second circuit contained in the IC determines the signal drop in the bond wire by examining a parameter (e.g., current) proportional to a strength of the output signal at or before the pad in a transmission path of the signal. Thus, additional external terminals to sense the signal strength at a point external to the IC to provide compensation for the drop may not be required.

Abstract: A clock distribution tree for an integrated circuit memory includes a set of data drivers, a corresponding set of input buffers coupled to the data drivers, a first clock distribution tree coupled to the data drivers, and a second clock distribution tree coupled to the input buffers, wherein the first and second clock distribution tree are substantially matched and mirrored distribution trees. The line width of the first clock distribution tree is substantially the same as the line width of the second clock distribution tree. The line spacing of the first clock distribution tree is substantially the same as the line spacing of the second clock distribution tree. Numerous topologies for the first and second clock distribution trees can be accommodated, as long as they are matched and mirrored. Valid times for the integrated circuit memory are maximized and data and clock skew is minimized.

Abstract: The present invention provides a semiconductor integrated circuit device that reduces the influence of crosstalk noise and is operable properly even when relatively long signal wirings that pass over a macrocell are formed. In the semiconductor integrated circuit according to the present invention, buffering cells formed between the macrocell and an input/output circuit close thereto are connected to their corresponding signal wirings extended so as to pass over an area formed with the macrocell.

Abstract: A method and apparatus implement balanced clock distribution networks on application specific integrated circuits (ASICs) with voltage islands functioning at multiple operating points of voltage and temperature, and a design structure on which the subject circuit resides is provided. A clock source is coupled to an N-level balanced clock tree providing a clock signal. Each of a plurality of voltage islands includes a respective voltage shifter and programmable delay function receiving the clock signal. Each respective voltage shifter and programmable delay function provides a second clock signal to a respective balanced clock tree for the associated voltage island. A system controller provides a respective control input to each respective voltage shifter and programmable delay function. The respective control input is varied dynamically corresponding to an operational mode of the respective voltage island.

Abstract: In order to prevent a signal of a signal wiring from receiving a bad influence due to a power supply capacitor, provided is a semiconductor including a high reference potential terminal and a low reference potential terminal composing power supply voltage terminals; a first MOS capacitor in which a gate of a p-channel MOS field effect transistor is connected to the low reference potential terminal, and a source and a drain are connected to the high reference potential terminal; and a first signal wiring connected to the gate via a parasitic capacitor and a signal in the low reference potential is supplied at the time of starting the power supply.

Abstract: A semiconductor circuit is installed on a printed circuit board having a power wiring pattern and a ground wiring pattern that do not intersect. The semiconductor circuit includes a first power supply terminal and a first ground terminal for a first side of the semiconductor circuit, and a second power supply terminal and a second ground terminal for a second side opposing to the first side. The direction from the first power supply terminal to the first ground terminal is the same as the direction from the second power supply terminal to the second ground terminal.

Abstract: An apparatus including a first circuit, a second circuit and a third circuit. The first circuit may be configured to (a) receive (i) a plurality of input signals and (ii) a clock signal and (b) present (i) a plurality of low-swing differential signals and (ii) a full-swing differential signal. The second circuit may be configured to (a) receive (i) the plurality of low-swing differential signals, (ii) the full-swing differential signal and (iii) the clock signal and (b) present a plurality of output signals. The third circuit may be configured to communicate the plurality of low-swing differential signals and the full-swing differential signal from the first circuit to the second circuit. The third circuit may be further configured to generate a local clock in response to the full-swing differential signal.

Abstract: Clocks are distributed efficiently to regions of a specialized processing block in a PLD. Multiple clocks are selected from a larger universe of clocks and distributed to the specialized processing block, but the choices of clocks at the individual functional regions, or stages of functional regions, are less than fully flexible. In some cases, an entire region may use one clock. In another case, portions of a stage within a region that previously had been able to select individual clocks must use one clock for the entire stage. In another case, only a subset of the selected clocks is available for a particular region, but that subset is flexibly distributable within the region. In another case, a clock may be selectable for each stage of each functional region directly from the larger universe of available clocks, avoiding the need for circuitry to select the multiple clocks from the larger universe.

Abstract: An integrated circuit with a signal bus formed by the cell abutment of logic cells. The integrated circuit comprises at least two logic cells. The signal bus is formed by cell abutment of the at least two logic cells. The signal bus is configured to receive a signal and to distribute the signal to each of the at least two logic cells.

Abstract: Provided is a grid-type high-speed clock signal distribution network capable of reducing a difference in amplitude of a standing wave on a transmission line and of supplying a signal from any position. The network for transmitting the clock signal is such that ends of the differential signal transmission line are connected via an inductor, a low-amplitude segment is eliminated by a phase shift in the inductor and a standing wave of substantially uniform phase and amplitude is produced, wherein the number of lines connected to the grid point is made the same for entire grid points.

Abstract: A three stage circuit according to the invention comprises a data input, a data output, a control input, two voltage supply inputs. The first stage is electrically connected to the data input and control input and is defined by a combinatorial circuitry with two outputs. The second stage is defined by at least two transistors connected in series between the two voltage supply inputs with their inputs electrically connected to the respective outputs of the first stage and with a common output such that in connection with the first stage they operate as a tri-state gate. The third stage of that three stage circuit is electrically connected to the control input and the common output of the second stage.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate having a first area. A first counter is provided in the first area, cyclically counts and outputs a first counter signal as a result of counting. A global reset circuit is provided on the semiconductor substrate and outputs a global reset signal. A first local reset circuit is provided in the first area and outputs a first local reset signal upon receiving the first counter signal of a set value after supplied with the global reset signal. A first circuit is provided in the first area and supplied with the first local reset signal.

Abstract: This invention relates to adaptively compensating for variations in integrated chip circuitry due to delays caused by multiple thresholds. The multi-threshold adaptive dynamic scaling system disclosed compensates for normal on-chip variations which affect system process and voltage variability, as well as overall performance. This system regulates a voltage control and provides high voltage thresholds, regular voltage thresholds, and low voltage thresholds to compensate for threshold voltage variations.

Abstract: A computer system includes a substrate on which a first current mirror and a second current mirror are disposed. When a stress is present, a behavior, e.g., carrier mobility, of at least one of the devices in each of the first current mirror and the second current mirror is dependent on a direction in which that device is disposed on the substrate. Further, one of the devices in the first current mirror is disposed in a non-parallel orientation with respect to one of the devices in the second current mirror.

Abstract: An integrated circuit with a signal bus formed by the cell abutment of logic cells. The integrated circuit comprises at least two logic cells. The signal bus is formed by cell abutment of the at least two logic cells. The signal bus is configured to receive a signal and to distribute the signal to each of the at least two logic cells.

Abstract: A semiconductor device contains a semiconductor chip, and includes first and second circuits, a control signal line and a terminal. The first circuit is arranged in a center of the semiconductor chip and is configured to operate at a first voltage. The second circuit is arranged in an input/output circuit area around the first circuit on the semiconductor chip, and is configured to operate at the first voltage and a second voltage and to transfer a signal between an external unit outside the semiconductor chip and the first circuit. The control signal line is provided for the input/output circuit area on the semiconductor chip. The terminal is connected with the control signal line and supplied with a control signal. The second circuit stops a transfer of the signal between the external unit and the first circuit in response to the control signal which is transferred on the control signal line.

Abstract: In a semiconductor integrated circuit device in which a plurality of I/O cells having level shift circuits are placed in an I/O region, two input/output cells respectively have four level shift circuits 11, 12a to 12c. A power supply cell, originally including only wiring for supply of a power supply voltage or a ground voltage, is additionally provided with three level shift circuits, which should originally be placed in the two input/output cells. The level shift circuits in the power supply cell are circuits asked for no high-speed operation and shared by the two input/output cells. This reduces the size of the two input/output cells and reduces the pitch of the I/O cells, permitting a larger number of required pins in a smaller area.

Abstract: A clock distribution approach includes distributing a clock signal from a clock tree to a first set of circuit elements characterized by a first circuit characteristic; and distributing a clock signal from a sub-tree of the clock tree to a second set of circuit elements characterized by a second circuit characteristic different from the first circuit characteristic.

Abstract: A power MOSFET Qp and a protection circuit 3 are formed over a semiconductor substrate to constitute a construction in which the power MOSFET Qp and the protection circuit 3 are electrically separated from each other. Then, a screening voltage is applied between the gate electrode and the source electrode of the power MOSFET Qp which is electrically separated from the protection circuit 3, thereby eliminating a power MOSFET Qp having a latent defect. Subsequently, a non-defective power MOSFET Qp and the protection circuit 3 are electrically connected by a bonding wire.

Abstract: Regions G1 to G8 each including a predetermined number of flip-flops (FF) are divided into two groups. This dividing is performed so that the number of data connection channels intersected by a boundary is minimized. In the case of intersection of two data connection channels (A1, A2), the number of data connection channels intersected by the boundary is two, the minimum number. After grouping of all the regions (G1 to G4, G5 to G8), clock tree synthesis (CTS) is performed. If clock forming is performed in this way, the increase in clock skew on an actual device can be limited and on-chip variation resistance can be increased.

Abstract: An integrated circuit 78 is formed of multiple layers of circuits 14, 16 superimposed to produce stacks of circuit blocks 2, 4. Stack control circuitry 18, 20 is associated with the input and output signals from the circuit blocks to direct these to/from the currently active circuit block(s) as appropriate. The superimposed circuit blocks 2, 4 provide redundancy for each other, both for manufacturing defect resistance and for operational redundancy, such as providing multiple modular redundancy in safety critical environments.

Abstract: A bus bar constitutes a power line and another bus bar constitutes an earth line. The bus bars are layered in the normal direction of an insulating substrate via an insulating member. Here, the bus bar positioned at the upper side is formed by a metal member and the bus bar positioned at the lower side is formed by a wiring layer formed on the insulating substrate. Since one of the bus bars is the wiring layer fixed to the insulating substrate, it is possible to assure heat radiation of the bus bar. Thus, it is possible to make the bus bar a wiring layer having a comparatively small cross sectional area and reduce the semiconductor module size in the normal direction. By mounting the semiconductor module on the drive device for a hybrid vehicle, it is possible to reduce the vertical-direction size when mounted on the vehicle and lower the position of the center of gravity of the vehicle to improve the running stability.

Abstract: The invention provides a semiconductor integrated circuit of which malfunction caused by noise from outside is reduced. The semiconductor integrated circuit has a power supply terminal, a ground terminal, internal circuits supplied with a power supply potential and a ground potential from the power supply terminal and the ground terminal, output circuits, an exclusive ground wiring extending from the ground terminal, a first capacitor connected between the exclusive ground wiring and a power supply wiring, an exclusive power supply wiring extending from the power supply terminal, and a second capacitor connected between the exclusive power supply wiring and a ground wiring.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate, one or more wells formed in the semiconductor substrate, one or more diffusion layers formed in the one or more wells, a plurality of interconnects formed in an interconnect layer, the one or more diffusion layers and the plurality of interconnects being connected in series to provide a coupling between a first potential and a second potential, and a comparison circuit coupled to one of the interconnects set at a third potential between the first potential and the second potential, and configured to compare the third potential with a reference potential, wherein a first interconnect of the plurality of interconnects that is set to the first potential is connected to at least a first well of the one or more wells and connected to a first diffusion layer of the one or more diffusion layers that is formed in the first well.

Abstract: A clock generating method and circuit are provided. The circuit includes a basic clock unit, a plurality of subclock units, which are connected in parallel or in series, and a plurality of special control units (SCU). The basic clock unit provides a basic clock signal and each of the clock units provides a corresponding clock signal. Each of the special control units are disposed between two adjacent clock units to delay the clock signal generated by the clock unit connected to the output terminal of the special control units.

Abstract: A semiconductor integrated circuit comprises a logic circuit unit, a signal control unit, a first signal selecting unit to a third signal selecting unit, and a first element electrode to a fourth element electrode. A part of signal lines of the logic circuit unit is connectable to different element electrodes, in accordance with the operating state of the logic circuit unit. The signal control unit generates connection information related to the connection of the signal lines to the element electrodes, thereafter sending the connection information to an external LSI. The connection is made after a retaining period, during which the element electrode concerned is maintained at high impedance, thereby avoiding unexpected failure. According to the present structure, the number of element electrodes required by the semiconductor integrated circuit can be reduced.

Abstract: A module includes a semiconductor device, a phase adjustment circuit generating a second clock so that a phase adjustment signal output from the semiconductor device and a first clock have a predetermined phase relationship, and an output circuit that is provided in the semiconductor device and generates the phase adjustment signal from the second clock.

Abstract: For distributing a signal to loads in an area, the area is divided into a plurality of regions. A respective signal point is disposed in each region for providing the signal to a load in the region. A respective diffusion point is disposed between any two neighboring signal points. The signal is initially applied to a center point of the signal and diffusion points. The signal when received at a given signal or diffusion point is transmitted to any of the signal or diffusion points within a maximum distance from the given signal or diffusion point.