Abstract: By a unit for determining fractions of a substance in a gas or gas mixture, measurements are carried out on the gas or gas mixture for purging a lens in a projection apparatus for projecting patterns onto a substrate. The results of a first measurement on the gas fed to the lens are compared with the results of a measurement of the gas removed from the lens. If, the substance is a contaminating substance that leads to a deposit on the lens under the influence of high-energy radiation from an illumination source, the difference is used to infer photochemical reactions on the surface of the lens that lead disadvantageously to the deposition. A signal is generated as a consequence of the comparison and is used to take preventive measures against a degradation of the lens. Mass spectrometers, electric or optical sensors and other known methods for substance analysis are used as measurement units.

Abstract: A method and system for identifying a defocus wafer by mapping a topography of each wafer in a first wafer batch using a level sensor apparatus (100); calculating a focus spot deviation (402) from the data, the focus spot deviation (402) corresponding to a height by which a focus spot of a photo exposure module would be defocused by the topography; converting the focus spot deviation (402) to a corresponding wafer stage set point to which the photo exposure module is set, to focus the focus spot on each wafer in the wafer batch; and identifying a defocus wafer in the wafer batch, as a wafer having a topography that would defocus the focus spot, even when the photo exposure module is set to the wafer stage set point.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam. The illumination system includes a pulsed source of radiation and a controller to control an output of the pulsed source of radiation. The controller includes a dose sensor to measure a dose of a pulse of the source of radiation. The dose sensor includes a dose sensor output to provide a dose signal representative of the measured dose. An integrator unit is connected to the dose sensor output. The integrator unit integrates the dose signal at least twice, an output of the integrator unit provides an integrator output signal including the at least twice integrated dose signal. The output of the integrator unit drives a driving input of the source of radiation with the integrator output signal.

Abstract: The present invention provides a lithographic apparatus, including: a substrate table constructed to hold a substrate; a projection system configured to project a radiation beam through an exposure slit area onto a target portion of the substrate; a patterning device configured to import the radiation beam with a pattern in its cross-section to form a patterned radiation beam, the patterned radiation beam at the target portion of the substrate being in focus over a depth of focus; and a measurement system that is arranged to measure a surface topography of at least part of the target portion, wherein the projection system is arranged to adjust a dimension of the exposure slit area to form an adjusted exposure slit area over which surface topography variations are equal to or smaller than the depth of focus.

Abstract: A process for the determination of focal plane deviation uniquely due to the lens field curvature associated with a photolithographic projection tool is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a stepper or scanner running in static mode. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that calculates the lens field curvature in an absolute sense in the presence of wafer height variation and varying stage performance.

Abstract: A semiconductor wafer processing apparatus may include a chuck and/or a focus ring. The chuck may be configured to hold a wafer. The focus ring may be disposed surrounding a rim of the chuck. The focus ring may include a first section formed of a first material and a second section formed of a second material. The first material and the second material may have different conductivities. A method of forming a semiconductor wafer processing apparatus may include forming a first section of a focus ring from a first material, forming a second section of the focus ring from a second material having a different conductivity than the first material, combining the first and second sections to form a focus ring, and/or arranging the focus ring so as to surround a chuck.

Abstract: A scanning exposure apparatus for performing exposure of a substrate to light via an original while the substrate and the original are scanned. The apparatus includes a projection optical system to project light from the original onto the substrate, a stage to hold the substrate and to move in a scanning direction perpendicular to an optical axis of the projection optical system, and a focus detector to detect a position of a surface region of the substrate in a direction of the optical axis.

Abstract: An exposure apparatus includes a projection optical system (3) for projecting a pattern of a mask (2) onto a substrate (5), and a fluid supply unit (6) for supplying a fluid between said projection optical system and the substrate, said fluid supply unit (6) including an injection unit (19) for injecting carbon dioxide into the fluid.

Abstract: A magnification correction device 1 includes magnification correction optics 2, a pressure adjustment device 3 and a controller 4. The magnification correction optics 2 is formed in a shape of a box with a glass plate 20 and a bottom plate 11 positioned parallel to the glass plate 20 and a frame 10. The inside of the box is an air room 24 connected to a pressure adjustment device 3 via a connecting pipe 12 so that the pressure of the inside can be changed. The cylinder 30 is driven by a motor 35 via a linear movement unit 36 such as a ball screw and the motor 35 is controlled by a controller 4. The moving distance of cylinder 30, which is equal to the moving distance of the piston, is decided by the number of the revolutions of the motor 35, and the capacity of the closed circuit of the pressure adjustment device 3 is also decided.

Abstract: An in-situ interferometer includes an image modifying optic that produces light ray bundles. The light ray bundles are projected onto a reticle with a plurality of measurement fiducials encoded onto a face of the reticle. The measurement fiducials are exposed onto a sensing plane and their locations measured. Aberrations in the projection system are determined from the measurements of the exposed reticles.

Abstract: A semiconductor wafer is exposed with a pattern from a mask or reticle in an exposure tool. The exposure tool has an adjustable lens system and a light source, which is tunable in wavelength. A first exposure is performed with a tuned first wavelength and a first setting of the lenses. Prior to performing a second exposure onto the same wafer and into the same resist layer, the wavelength of the light source is varied to a second wavelength in order to mimic a focus offset. A resulting image shift at the slit edges of the scanning system due to chromatic aberration is then corrected for by setting the lens system in dependence of the difference between the tuned first and second wavelength. Having tuned second wavelength of the light source and having set the lens system, the second exposure is performed. A continuous adjustment of the lens system based upon a continuously varying light source wavelength can be accomplished.

Abstract: An in-situ interferometer includes an image modifying optic that produces light ray bundles. The light ray bundles are projected onto a reticle with a plurality of measurement fiducials encoded onto a face of the reticle. The measurement fiducials are exposed onto a sensing plane and their locations measured. Aberrations in the projection system are determined from the measurements of the exposed reticles.

Abstract: A reflecting Offner-like optical system is described which is suitable for use in a photolithographic system in which the magnification is approximately 1 to 1, and where the format is flexible. The primary mirror is split into two halves, which are movable with respect to each other. Magnification is slightly changeable by moving the two halves of the split primary mirror forward and backward by slight amounts. The reflecting optical system is moved in a reciprocating manner across a nominally stationary photomask and an intermittently stationary flexible format, which includes a segment of a roll-to-roll web. The arctuate object and image are rotated 90 degrees by flat mirrors to enable efficient scan coverage as the entire mirror system shuttles back and forth across the mask and the web. Center to center distance between the object and the image fields is increased by the use of an aspheric secondary mirror.

Abstract: An exposure apparatus is configured to expose a substrate to light while the substrate is scanned. The apparatus comprises a stage configured to hold the substrate and to move, a measuring device configured to measure a position of a surface of the substrate held by the stage, a controller configured to define an arrangement of measurement points with respect to each of a plurality of shot regions arranged along a straight line, and to cause the measuring device to sequentially measure positions of the surface with respect to the defined measurement points in the plurality of shot regions while causing the stage to move to scan the substrate along the straight line. The controller is configured to define the arrangement such that the plurality of shot regions have the arrangement in common with each other.

Abstract: A method for automatically providing data for the focus monitoring of a lithographic exposure process is disclosed. Firstly, the file for a wafer is generated, which holds at least the information of the size of the wafer, the position of a plurality of measurement pattern, the order in which the measurement patterns are captured and registered, and the alignment of the measurement pattern. Secondly, this information is stored in a master grid. Thirdly, images are acquired of the pattern of each position stored in the master grid of the generated file, wherein the image acquisition is carried out according to the order as stored. Finally, names are assigned to the acquired images.

Abstract: An alignment apparatus for aligning with each other a mask stage that supports a mask that has an exposure pattern and a wafer stage that supports an object by using a light with wavelength of 1 nm to 50 nm, said alignment apparatus including a substrate for forming a first reference pattern similar to a second reference pattern formed on the mask or the mask stage, and a detection part for detecting a light from the substrate, wherein said substrate and detection part form a hollow housing, in which a gas is filled.

Abstract: A method and system are used to control a characteristic of a beam. The system comprises an illumination system, at least one optical element, a fluid source, and a pressure and/or fluid concentration controller. The illumination system produces a beam of radiation. The at least one optical element has at least one fluid path therethrough through which the beam passes and is capable of changing a characteristic of one or more portions of the beam. The fluid source supplies fluid to the at least one fluid path. The pressure and/or fluid concentration controller controls pressure and/or fluid concentration of the fluid to change the characteristic of the beam, which is positioned between the fluid source and the optical element.

Abstract: A lithographic projection apparatus includes a measurement system for measuring changes in projection system aberrations with time, and a predictive control system for predicting variation of projection system aberrations with time on the basis of model parameters and for generating a control signal for compensating a time-varying property of the apparatus, such as the OVL values (X-Y adjustment) and the FOC values (Z adjustment) of a lens of the projection system for example. An inline model identification system is provided for estimating model parameter errors on the basis of projection system aberration values provided by the predictive control system and measured projection system aberration values provided by the measurement system, and an updating system utilizes the model parameter errors for updating the model parameters of the predictive control system in order to maintain the time-varying property within acceptable performance criteria.

Abstract: A scanning exposure apparatus includes a projection system, a stage system, a first detector and a control system. The stage system has first and second stages, each of which is movable independently in a plane while holding a substrate. The first detector detects focusing information of a vicinity of an outer circumference of the substrate during a detecting operation. The control system controls the stage system to perform the detecting operation with the first stage, while performing a first exposure operation on the substrate held by the second stage. After the first exposure operation, a second exposure operation for the substrate held on the first stage is performed, in which a shot area in the vicinity of the outer circumference of the substrate is exposed by moving the first stage while adjusting a position of the substrate surface held by the first stage using the detected focusing information.

Abstract: A lithographic apparatus includes a measurement system to measure the position and/or movement of a substrate support relative to a reference frame. The measurement system includes a target mounted to one of the substrate support and the reference frame, a radiation source mounted to the other one of the substrate support and the reference frame and a sensor configured to detect a pattern of radiation propagating from the target, indicating the position or movement of the substrate support. The substrate support includes one or more gas outlets configured to provide a flow of gas that encapsulates the volume of space through which the beam of radiation propagates to the target.

Abstract: A lithographic apparatus includes an illumination system configured to provide a beam of radiation and projection system configured to project the radiation beam onto a target portion of a substrate. At least one of the illumination system and the projection system includes a focusing element for reflecting or refracting the beam. A plurality of stop discs is provided, each having an aperture therethrough, together with a disc positioner configured to place one of the stop discs adjacent the focusing element to control the numerical aperture (NA) of the projection system or illumination system. The apparatus further includes a disc changer configured to select one of the stop discs and provide the selected stop disc to the disc positioner, the disc changer being external to the projection system or illumination system.

Abstract: Improved gray scaling imaging methods and systems include a group of elements within an array of individually controllable elements that project a part of a radiation beam onto a lens in an array of microlenses, and are individually controllable so that any number of the individually controllable elements may be switched on or off to generate a gray scale.

Abstract: Exposure equipment having a wafer pre-alignment apparatus and a wafer pre-alignment method using the same reduce wafer pre-alignment errors. The exposure equipment comprises a plurality of exposure units in which lots of wafers are loaded, respectively, and a central control unit. The exposure units are constituted by an alignment apparatus that can detect the relative angular orientation of each wafer transferred to the apparatus and thus, sense any misalignment of the wafers. The central control unit calculates inherent error values for the exposure units based on data transmitted to the central control unit from the alignment apparatus. The central control unit also controls the equipment based on the inherent error values of the exposure units to compensate for the misalignment of the wafers in the exposure units.

Abstract: A focus monitor method comprising preparing a mask comprising a first and second focus monitor patterns and an exposure monitor pattern, the focus monitor patterns being used to form first and second focus monitor marks on a wafer, and the exposure monitor pattern being used to form exposure meters on the wafer, obtaining a exposure dependency of a relationship between a dimensions of the focus monitor marks and the defocus amount, forming the focus monitor marks and exposure monitor mark on the wafer, measuring a dimension of the exposure monitor mark to obtain an effective exposure, selecting a relationship between the dimensions of the focus monitor marks and the defocus amount corresponding to the effective exposure, measuring a dimensions of the first and second focus monitor marks, and obtaining a defocus amount in accordance with the measured dimensions of the focus monitor marks and the selected relationship.

Abstract: A continuous source of radiation, for example a lamp, is used in conjunction with pixel grid imaging. In one example, the individually controllable elements operate at a frequency of at least about 50 kHz. To compensate for any distortion of an exposed spot a point spread function is adjusted to be shorter in a scanning direction.

Abstract: The invention relates to a substrate table arranged to support a substrate provided with at least one substrate mark. The at least one substrate mark having a position that can be measured using an alignment system. The substrate table is provided with an optical system having a magnification factor deviating from 1, for providing an image of the at least one alignment mark to be measured by the alignment system.

Abstract: A focus system that includes a calibration subsystem and a control subsystem. The control subsystem, which includes a control sensor, is in close proximity to the exposing of an image. The calibration subsystem, which includes a calibration sensor and a control sensor, is located remotely from, or off-axis with respect to, the exposing of an image. By separating calibration and control functions, the functional requirements can be separated into two (or more) types of sensors.

Abstract: A method of configuring a transfer of an image of a patterning device pattern onto a substrate with a lithographic apparatus. The method includes determining an intermediate illumination arrangement parameter and an intermediate patterning device parameter by varying an initial illumination arrangement parameter and an initial patterning device parameter using a calibrated model until the calculated image of the pattern printed on the substrate is within predetermined specification; calculating a metric that represents a lithographic response of the printed pattern over a process range, where the pattern would be imaged with the intermediate illumination arrangement and patterning device parameters over the process range, and depending on a result of the metric, adjusting the initial patterning device and illumination arrangement parameters.

Abstract: An alignment mark for the coarse alignment and fine alignment of a semiconductor wafer in an exposure tool includes a first partial structure for generating a first reflection pattern in the exposure tool for the fine alignment of the semiconductor wafer, and a second partial structure for generating a second reflection pattern in the exposure tool for the coarse alignment of the semiconductor wafer. The first partial structure has a plurality of first structure elements, which are arranged relatively parallel and in a manner lying next to one another with a predetermined distance between midpoints symmetrically around the center of an inner region. The second partial structure has a plurality of second structure elements, formed in a manner corresponding to a pattern stored in the exposure tool and being arranged in the inner region.

Abstract: A multiphoton-absorption exposure apparatus for exposing a multiphoton absorption material by applying light to the multiphoton absorption material so that the light converges at a predetermined convergence position, in which an exposure-condition control unit is provided for changing an exposure condition so that optical reactions are more likely to occur when the predetermined convergence position is located deeper in the multiphoton absorption material.

Abstract: A lithography system has a magnification module having multiple magnifications at a same time within an object plane, which can include a pattern generator therein. The pattern generator is used to pattern light from an illumination system, which is directed by a projection optical system onto a substrate to form features on a substrate. Having multiple magnifications in the object plate allows for patterning of both large and small features on an image plane, which can include the substrate therein. In one example, an array of pattern generators are used. In this example, substantially an entire surface of the substrate can be patterned with large and small features at substantially a same time.

Abstract: A method and apparatus are provided for improving the leveling and, consequently, the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention performs a pre-scan of the wafer's topography and assigns importance values to different regions of the wafer surface. Exposure focus instructions are calculated based on the topography and importance values of the different regions and the wafer is then scanned and imaged based on the calculated exposure focus instructions.

Abstract: A lithography apparatus including a projection system configured to project a beam of radiation onto a substrate as an array of sub-beams of radiation and an array of individually controllable elements configured to modulate the sub-beams of radiation. The apparatus also includes a data-path including at least one data manipulation device arranged to at least partly convert data defining a requested pattern to a control signal suitable for controlling the array of individually controllable elements to form substantially the requested pattern on the substrate. The data manipulation device is arranged to carry out the conversion by applying a pseudo-inverted form of a point-spread function matrix to a column vector representing the requested pattern. The point-spread function matrix includes information about the shape and relative position of the point-spread function of each spot to be exposed on the substrate by one of the sub-beams of radiation at a given time.

Abstract: Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

Abstract: A method of optimizing an imaging performance of a projection exposure system is provided, wherein the projection exposure system includes an illumination optical system for illuminating a patterning structure and a projection optical system for imaging a region of the illuminated patterning structure onto a corresponding field. The method involves setting the field to a first exposure field, setting optical parameters of the projection exposure system to a first setting such that the imaging performance within the first exposure field is a first optimum performance, changing the field to a second exposure field, and changing the optical parameters to a second setting such that the imaging performance within the second exposure field is a second optimum performance.

Abstract: A lithographic apparatus includes a radiation system that provides a beam of radiation, and a support structure that supports a patterning structure. The patterning structure is configured to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate support that supports a substrate, and a projection system that projects the patterned beam onto a target portion of the substrate. The projection system includes an optical element that has a beam exit area through each of which the patterned beam passes. The apparatus further includes a fluid cleaning system that cleans a fluid to be introduced into a region in between the optical element and the substrate. The fluid cleaning system includes a fluid inlet, a fluid outlet, and a cleaning zone disposed between the inlet and outlet. The cleaning zone includes a nucleated surface provided with a plurality of nucleation sites.

Abstract: A position detection apparatus for detecting a position of an object to be observed, including a position detection system, and an evaluation unit for measuring by the position detection system each of mark spacings between a plurality of alignment marks arranged on the object to be observed and evaluating measurement performance of the position detection system on the basis of mark spacing information obtained as the measurement result.

Abstract: An apparatus and method for characterizing an illumination pupil of an exposure tool comprises forming a plurality of pinhole test patterns at a plurality of test site locations to facilitate locating test pattern edges for extracting therefrom the illumination pupil characteristics of the exposure tool.

Abstract: An exposure method for an exposure apparatus that exposes a mask pattern onto a plate using a projection optical system includes the steps of obtaining information about flatness of a first mask, condition of an image plane when projecting a pattern of the first mask by using the projection optical system, information about a driving amount of a driving system, which can change an imaging condition on the plate based on the condition of the image plane, and information about flatness of a second mask, changing information about the driving amount by using information about flatness of the first and second masks, and driving the driving system based on changed information about the driving amount of the driving system to project a pattern of the second mask onto the plate using the projection optical system.

Abstract: An optical mechanism installed in an office machine, which has a machine base defining an internal space, and a paper-feeding mechanism arranged on the machine base, the paper-feeding mechanism having an inside receiving space and a bottom incident zone for the passing of light. The optical mechanism has an optical-path device formed of an image sensor and an optical module and mounted in the internal space inside the machine base, and a light-focusing structure mounted in the receiving space inside the paper-feeding mechanism above the incident zone for increasing optical path.

Abstract: An exposure apparatus includes a illumination optical system for illuminating a reticle with light from a light source, and a projection optical system for projecting a pattern of the reticle onto an object, said projection optical system includes a lens closest to the object, wherein a surface on the object side of the lens is smaller than an effective area of a surface on the reticle side of the lens, and wherein said exposure apparatus exposes the object via a liquid that is filled in a space between the lens and the object.

Abstract: An exposure apparatus for transferring a pattern onto an object via a projection optical system, including a moving body arranged on an image plane side with respect to the projection optical system, a wave-front measuring unit at least a part of which is arranged in the moving body, and which measures wave-front information of the projection optical system, an adjusting unit that adjusts a state of an image of a projected pattern generated on the object via the projection optical system, and a controller that controls the adjusting unit using the wave-front information and Zernike Sensitivity corresponding to exposure conditions of the object.

Abstract: A method and system for performing a focus test in a lithographic apparatus. According to the method, a substrate is provided with a layer of radiation sensitive material, the substrate is illuminated in the lithographic apparatus using a first focus sensitive feature and a second focus feature, and the substrate is analyzed to provide results of the focus test using the first focus sensitive feature as imaged on the substrate. The focus test is performed on a regular production wafer, and the results of the focus test are allowed if predetermined statistic properties associated with the second focus feature as imaged on the substrate are within predetermined limits. The second focus feature may be focus sensitive or focus insensitive.

Abstract: An exposure apparatus for exposing a pattern of a reticle onto a plate while synchronously scanning the reticle and the plate, said exposure apparatus includes a projection optical system for projecting the pattern of the reticle onto the plate, a measuring part for measuring a position of a surface of a target to be measured in an optical axis direction of the projection optical system, and a controller for controlling the position of the surface of the target in the optical axis direction based on a measurement result by the measuring part, wherein said measuring part measures a position of the same measurement point on the surface of the target plural times, wherein said controller uses, as a measurement value of the same measurement point, an average value of plural measurement results obtained at the same measurement point, and wherein said target is the reticle or the plate.

Abstract: In an off-axis levelling procedure a height map of the substrate is generated at a measurement station. The height map is referenced to a physical reference surface of the substrate table. The physical reference surface may be a surface in which is inset a transmission image sensor. At the exposure station the height of the physical reference surface is measured and related to the focal plane of the projection lens. The height map can then be used to determine the optimum height and/or tilt of substrate table to position the exposure area on the substrate in best focus during exposure. The same principles can be applied to (reflective) masks.

Abstract: In an off-axis levelling procedure a height map of the substrate is generated at a measurement station. The height map is referenced to a physical reference surface of the substrate table. The physical reference surface may be a surface in which is inset a transmission image sensor. At the exposure station the height of the physical reference surface is measured and related to the focal plane of the projection lens. The height map can then be used to determine the optimum height and/or tilt of substrate table to position the exposure area on the substrate in best focus during exposure. The same principles can be applied to (reflective) masks.

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device. The patterning device is configured to pattern a beam of radiation according to a desired pattern. The lithographic apparatus further includes a substrate table configured to hold a substrate. The substrate has a surface coated at least partially with a layer of radiation sensitive material. The lithographic apparatus also includes a projection system configured to project the patterned beam onto a target portion of the substrate, and a liquid supply system. The liquid supply system is configured to supply a prewetting liquid on top of the layer of radiation sensitive material to prewet the substrate, and is configured to supply an immersion liquid in a space between the prewet substrate and at least a portion of the projection system.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle mounted on a first stage onto an object mounted on a second stage, a first reference plate provided on the reticle or a surface equivalent to the reticle, the first reference plate having three or more first reference marks each of which serves as a reference for an alignment between the reticle and the object, a measuring unit for measuring focus position at imaging positions of the first reference marks and for measuring an image surface of the projection optical system, and a correcting unit for correcting a relationship between the image surface and a reference surface as a reference of a measurement by the measuring unit.

Abstract: A lithographic exposing system having an optical system including a light source, a lens, a mirror and a filter, and transferring patterns formed on a reticle to a substrate. The method includes a device for lowering the energy of the light from the light source below a threshold energy, an equipment for making the light that has passed through the device a light source for measuring alignment marks formed on the substrate, and a light path controlling device for directing the light from the light source toward the optical system in an exposing process and for making the light from the light source toward said the alignment mark measuring equipment.

Abstract: A system for microlithography comprises an illumination source; an illumination optical system including, in order from an objective side, (a) a first diffractive optical element that receives illumination from the illumination source, (b) a zoom lens, (c) a second diffractive optical element, (d) a condenser lens, (e) a relay lens, and (f) a reticle, and a projection optical system for imaging the reticle onto a substrate, wherein the system for microlithography provides a zoomable numerical aperture.