Abstract: With respect to each of a plurality of shots on a substrate, a line or surface is calculated which approximates a plurality of positions of the surface of the substrate detected by a detector with respect to a plurality of places, and the difference between the position of the surface detected by the detector and the position of the line or surface in the direction of the optical axis of a projection optical system is calculated with respect to each of the plurality of places. With respect to each of the plurality of places, the differences are averaged over the plurality of shots to determine an offset value.

Abstract: The invention is directed to a method for performing a tilted focus test that includes providing a target object, providing a projection beam of radiation using a radiation source, providing at least one reflective device to produce a projected projection beam of radiation onto the target portion, and producing a first projected projection beam of radiation onto the target object using the at least one reflective device in a first orientation. The invention further includes using a tilting device for tilting the at least one reflective device to a second orientation to provide a second projection beam with a tilt relative to said first projection beam, producing a second projected projection beam of radiation onto the target object, determining a lateral shift of the first and second projected projection beams on the target object, and determining from said lateral shift a defocus of the target object with respect to the projected projection beam.

Abstract: A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.

Abstract: An exposure method for exposing a pattern of a reticle onto a plate, via a projection optical system, while synchronously scanning the reticle and the plate. The exposure method includes the steps of (a) measuring before exposing, the measuring step including (i) a first substep of obtaining surface form data that shows a surface form of the reticle, and (ii) a second substep of detecting a measurement position having an abnormal measurement result as an error measurement position among measurement positions, to measure the surface form of the reticle based on a measurement result of the obtaining substep, and (b) controlling synchronous scanning of the reticle and the plate using the measurement result of the detecting substep, except for the detecting result of the error measurement position.

Abstract: A lithographic system includes a laser outputting a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a prism for forming interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable without replacing any optical components in an optical path of the lithographic system. The beamsplitter is movable along the optical path to adjust the resolution. The prism includes a plurality of sets of facets, each set of facets corresponding to a particular resolution. Each set of facets corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. The resolution is adjustable. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: A position detecting apparatus for detecting position of an object disposed in a first space by receiving light from the object with a light receiving element disposed outside said first space, said position detecting apparatus includes an optical system for directing light from the object to the light receiving element, and a first optical element transmitting light from the object, disposed in a partitioning member for partitioning said first space and space outside said first space, wherein said first optical element is located on a position on or near a pupil plane or a plane conjugate to the pupil plane of said optical system.

Abstract: Positional information of a stage within a movement plane is measured, using three encoders which include at least one each of an X encoder and a Y encoder. Based on position measurement values of the stage, the encoder used in position measurement is switched from an encoder (Enc1, Enc2 and Enc3) to an encoder (Enc4, Enc2 and Enc3). On the switching, a coordinate linkage method or a phase linkage method is applied to set an initial value of an encoder (Enc4) which is to be newly used. Accordingly, position measurement values of the stage before and after the switching are stored even though the encoder used in position measurement of the stage is sequentially switched, and the stage can be driven accurately two-dimensionally.

Abstract: A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.

Abstract: An immersion lithographic apparatus includes a liquid supply system member configured to contain a liquid in a space between a projection system of the lithographic apparatus and the substrate and a liquid supply system member compensator arranged to compensate an interaction between the liquid supply system member and substrate table.

Abstract: An imaging device in a projection exposure machine for microlithography includes at least one optical element and at least one manipulator, a linear drive for manipulating the position of the optical element. The linear drive has at least one moving element, the moving element having a shearing part and a lifting part. The shearing part is arranged to move the optical element and the lifting part is arranged to move the shearing part. The linear drive has a supporting element which is in contact with and prevents movement of the optical element while the shearing part is moved by the lifting part.

Abstract: A method for lithography patterning includes providing a mask for photolithography patterning; measuring a mask flatness of the mask; calculating focal deviation of imaging the mask to a substrate in a lithography apparatus; adjusting the lithography apparatus to have a compensated focal plane of the mask based on the focal deviation; and exposing the semiconductor substrate utilizing the mask and the lithography apparatus with adjusted focal plane.

Abstract: An optical system of a microlithographic exposure apparatus comprises at least one optical element (L1 to L16, 15, 16, 24) having a locally varying birefringence direction distribution that is caused by stress-induced birefringence and is at least substantially rotationally symmetrical. At least one birefringent correcting element (K1, K2; K?) is made of a crystal having a location independent birefringence direction distribution that is at least substantially rotationally symmetrical. The crystal has a crystal lattice orientation that is oriented such that its birefringence direction distribution is at least substantially perpendicular to the locally varying birefringence direction distribution of the at least one optical element (L1 to L16, 15, 16, 24).

Abstract: The invention is directed to enabling substrate identification by comparing the measured distance between two features on an unidentified substrate with one or more stored distances. The one or more stored distances are the distances intended during the design of one or more substrates. The unidentified substrate is identified by a stored distance that corresponds to the measured distance. The two features are selected from a plurality of features that may be placed on a back side or a front side of a substrate. An optical system is provided for reading the features from the back side or a front side of the substrate.

Abstract: A projection exposure apparatus for transferring an image of a patterned reticle onto a substrate comprises an illumination optical system for generating and directing an exposure beam onto the reticle, and a projection optical system provided between the reticle and the substrate. The projection optical system has a plurality of imaging mirrors each having a mirror support made of a support material. The support materials are subject to thermal expansion during projection that induces imaging aberrations at substrate level. The support materials are selected such that an aberration merit function, which is indicative of the overall amount of at least one type of the thermally induced aberrations, is minimized by mutual compensation of contributions of the mirrors to the one type of thermally induced aberrations. As a result, the mirror supports will then generally be different and have, when heated during exposure, different coefficients of thermal expansion.

Abstract: A permanent magnet fixed to a peripheral portion of a lens cell includes two magnets that are joined together so that the north poles face each other and the south poles are exposed. A first driving coil is arranged to face toward exits for lines of magnetic force from the joining surfaces of the north poles of the permanent magnet, and a second driving coil is arranged to face toward entrances for lines of magnetic force in the permanent magnet. The orientation of the lens is adjusted by adjusting the currents supplied to the first driving coil and second driving coil to drive the lens cell in an optical axis direction and horizontal direction in a state in which the lens cell is levitated relative to the cover.

Abstract: Laser light in a pattern reflected by a two-dimensional array micromirror 106 that is controlled on the basis of mask data of a mask pattern data output device 107 forms an enlarged pattern 110. This enlarged pattern is projected in a reduced manner onto a mask substrate 109 through a reduction-projection optical system 102, thereby forming a lithography pattern 111. Since a large number of patterns are written in an instant by the two-dimensional array micromirror 106, a time required for lithography the entire mask pattern is extremely shortened as compared with a conventional one. As a result, the mask cost can be largely reduced.

Abstract: An exposure apparatus configured to expose a substrate to radiant energy via an original plate while scanning of the original plate and the substrate are performed including a projection optical system configured to project light from the original plate onto the substrate, an original plate configured to hold the original plate and to be moved a substrate stage configured to hold the substrate and to be moved a measurement device configured to measure a position of a surface of a substrate facing the projection optical system in a direction of an optical axis of the projection optical system a processor configured to control a movement of the original plate stage, a movement of the substrate stage, and an operation of the measurement device, and an input device configured to input information about a measurement portion in the surface to be measured by the measurement device.

Abstract: A lithographic system includes a source of a laser beam; a beamsplitter dividing the laser beam into a plurality of beams; and a plurality of reflecting surfaces that forms interference fringes on a substrate using the plurality of beams. Resolution of the lithographic system is adjustable by adjusting angular orientation of the reflecting surfaces. The beamsplitter is movable along the optical path to adjust the resolution. The reflecting surfaces may be facets of a prism. Each reflecting surface corresponds to a particular beamsplitter position along the optical path, and/or to a particular resolution. The beamsplitter includes a linear grating or a checkerboard grating. The beams are N-way symmetric. A numerical aperture of the system is adjustable by moving the beamsplitter along the optical path. A liquid can be between the substrate and the prism.

Abstract: A plurality of first measurement patterns each including a protruding pattern formed of a resist film and a recessed pattern having a space with a shape corresponding to the protruding pattern are formed on a first substrate such that they have different focus values at a time of exposure, edge inclination amounts of the plurality of first measurement patterns are measured, and a focus dependence (17) of the edge inclination amounts is obtained based on correspondences (7) and (14) between the edge inclination amounts and the focus values. A second measurement pattern including the protruding pattern and the recessed pattern is formed on a second substrate so as to measure edge inclination amounts of the second measurement pattern, and a focus deviation amount deviating from a best focus at the time of exposure of the second measurement pattern is calculated from the edge inclination amounts of the second measurement pattern based on the focus dependence of the edge inclination amounts.

Abstract: A lithographic apparatus, a device manufacturing method, and a projection element for use in a lithographic apparatus are disclosed. The lithographic apparatus has a radiation system for providing a pulsed beam of radiation, a patterning device for imparting the beam with a pattern to form a patterned radiation beam, and a projection system having a projection element for projecting the patterned beam onto a target portion of a substrate. The apparatus further comprises an actuator for moving the projection element for shifting the patterned beam that is projected onto the substrate during at least one pulse of the radiation system. This can be done to compensate for a positional error between a substrate table holding the substrate and an aerial image of the projection system. The positional error could occur due to mechanical vibrations in the frame system of the lithographic apparatus.

Abstract: There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

Abstract: An immersion lithography system that compensating for any displacement of the optical caused by the immersion fluid. The system includes an optical assembly (14) to project an image defined by the reticle (12) onto the wafer (20). The optical assembly includes a final optical element (16) spaced from the wafer by a gap (24). An immersion element (22) is provided to supply an immersion fluid into the gap and to recover any immersion fluid that escapes the gap. A fluid compensation system is provided for the force on the final optical element of the optical assembly caused by pressure variations of the immersion fluid. The resulting force created by the varying pressure may cause final optical element to become displaced. The fluid compensation system is configured to provide a substantially equal, but opposite force on the optical assembly, to prevent the displacement of the final optical element.

Abstract: Aberration marks, which may be used in conjunction with lenses in optical photolithography systems, may assist in estimating overlay errors and optical aberrations. Aberration marks may include an inner polygon pattern and an outer polygon pattern, wherein each of the inner and outer polygon patterns include a center, and two sets of lines and spaces having a different feature size and pitch that surround the outer polygon pattern. In some embodiments, the marks can be used with scatterometry or scanning electron microscope devices.

Abstract: A system includes an illuminator, a mask, and a measurement device. The illuminator includes a light source. The mask includes at least one focus determination pattern having a first pattern portion and an adjacent second pattern portion. The first pattern portion and the second pattern portion have substantially the same width but produce a phase difference in light transmitted through the pattern portions. The measurement device measures a first critical dimension and a second critical dimension of a feature produced on a target by the at least one focus determination pattern. The difference between the first critical dimension and the second critical dimension relates to an amount of defocus and is sensitive to the focus change. The system may also include a feedback control loop where a determination regarding an amount of defocus is used to focus the position of a wafer or a mask or both of them onto the target. Additional apparatus, systems, and methods are disclosed.

Abstract: In order to adjust the optical axis of a light beam L1 in an exposure apparatus, on a support body in an XYZ three-dimensional coordinate system are mounted: a first mirror 10 having a reflective surface M1 obtained by rotating a plane parallel to the XY plane around an axis 11 parallel to the Y axis by an angle of ?; and a second mirror 20 having a reflective surface M2 obtained by rotating a plane parallel to the XZ plane around an axis 21 parallel to the X axis by an angle of ?. There are provided: position adjustment means for moving the entire support body having the two mirrors parallel to the XY plane; and angle adjustment means for adjusting the angle of the second mirror 20. The incident light L1 is reflected on the reflective surfaces M1 and M2 to be output as an outgoing light L3, where it is possible to perform an optical axis adjustment concerning position and angle by controlling the position adjustment means and the angle adjustment means.

Abstract: In a method of determining a structure parameter of a target pattern in a lithographic process, a series of calibration spectra are calculated from a reference pattern. Spectral analysis is performed on each calculated spectra, the spectral components and associated weighting being derived and stored in a library or used as the basis of an iterative search method. A spectrum is measured from the target pattern and spectral analysis of the measured spectrum is performed. The derived weighting factors of the principal components are compared with the weighting factors of the measured spectrum to determine the structure parameter.

Abstract: There is provided is an optical member-holding apparatus which can hold a plurality of optical members of two different optical systems, even when the optical members exist in a common barrel in a mixed manner, such that the relative positions between the optical members can be easily adjusted; and which holds a mirror in a projection optical system and a mirror in an illumination optical system and includes a barrel unit, an inner ring holding the mirror, a holding member holding the mirror, a support plate attached to the barrel unit, and a holding-supporting mechanism attached to the support plate and adjusting the relative position of the mirror to the mirror.

Abstract: The present application is directed to apparatus and methods for determining a magnitude of defocus and a direction of defocus for a photolithography process. A sub-resolution feature on a reticle which is not printed on a wafer at the best focus offset, but is formed on a wafer at some defocus during the photolithography process is analyzed to determine the magnitude and direction of defocus. The magnitude and direction of defocus are used to adjust the photolithography process to an optimal focus based on the determined magnitude of defocus and the determined direction of defocus.

Abstract: A projection exposure mask acceptance decision system includes assurance object measuring unit to measure quality assurance objects relating to projection exposure mask, first exposure characteristic deterioration quantity calculating unit to calculate first exposure characteristic deterioration quantity caused by deviations in average values of the quality assurance objects measured by the measuring unit, second exposure characteristic deterioration quantity calculating unit to calculate second exposure characteristic deterioration quantity caused by dispersion in the quality assurance objects measured by the measuring unit, sum calculating unit to calculate simple sum of the first and second quantity, root sum square calculating unit to calculate root sum square of the first and second quantity, entire exposure characteristic deterioration quantity calculating unit to calculate entire exposure characteristic deterioration quantity as an interior division value of the simple sum and root sum square, and judg

Abstract: A substrate bonding system has a first and a second substrate table for holding a first substrate and a second substrate, respectively, and a controller. The first substrate includes a first device having first contact pads and the second substrate a second device having second contact pads. The wafer bonding system is arranged to bond the first and second device in such a way that a circuit may be formed by the first and second device. The first and second substrate tables each include a position sensor arranged to measure an optical signal generated on an alignment marker of the first and second substrate, respectively. The first and second substrate tables include a first and second actuator respectively that is arranged to alter a position and orientation of the respective substrate table.

Abstract: A method of focus variation is described herein to achieve a one-step exposure of a wafer without the limitation of applying a complex y-tilt to a wafer stage. The position of the wafer surface to be exposed is periodically varied with respect to the focal plane, or vice versa. This relative movement between the focal plane, or best focus position along the optical axis and the wafer stage, or the wafer surface, is achieved by applying a movement to at least one of the reticle stage, one or more of the optical elements of the projection lens, and the wafer stage. The frequency of the movement is selected in dependence of the laser frequency (upper limit) or the scanning frequency (lower limit).

Abstract: A microlithographic projection illumination system has a focus-detection system for optically detecting deviations of the image plane of a projection lens from the upper surface of a substrate arranged in the vicinity of its image plane. The focus-detection system has a system for coupling in at least one measuring beam that is obliquely incident on, and to be reflected at, the substrate surface into an intermediate zone between the final optical surface of the imaging system and the substrate surface and a system for coupling out the measuring beam and detecting it following its reflection at the substrate surface.

Abstract: An automatic correction method for a direct exposure apparatus illuminates two exposure elements, which are included in adjacent exposure heads separately and which are to expose an identical line on an exposure target, among exposure elements arranged in a two-dimensional manner with an inclination of relative movement of an exposure target in a plurality of exposure heads arranged in the direction of the relative movement of the exposure target; detects the illumination of the two exposure elements by using a sensor board (11) that is moved, on the side where the exposure heads are illuminated, in the direction in which the exposure heads are arranged; and calculates correction amounts for correcting so that the two exposure elements can expose the identical line mentioned above, based on a detection result of the illumination of the exposure elements by the sensor board (11).

Abstract: A lithographic apparatus according to one embodiment includes an alignment system for aligning a substrate. The alignment system comprises an illuminator system configured to illuminate an alignment mark on the substrate with an illumination spot, the alignment mark comprising a plurality of lines and spaces. The system also includes a combiner system configured to transfer two images of the illuminated alignment mark without spatial filtering of the images, rotate the images 180° relatively to each other, and combine the two images; and a detection system configured to detect an alignment signal from the combined images and to determine a unique alignment position by selecting a specific one of extreme values in the detected alignment signal.

Abstract: A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image.

Abstract: A device and a method for testing an exposure apparatus is disclosed. A testing device includes a substrate, and a plurality of block patterns, each of which has a top area varying with an area of a shot region of the exposure apparatus, having at least two different heights located on the substrate. Additionally, the method for testing an exposure apparatus includes using the exposure apparatus to perform an exposure process on the testing device or on the testing device having a photoresist layer thereon, and testing the performance of the exposure apparatus through comparing surface information of the testing device computed by the exposure apparatus with actual surface information of the testing device or through examining photoresist patterns formed on the testing device.

Abstract: A projection objective of a microlithographic projection exposure apparatus comprises a manipulator for reducing rotationally asymmetric image errors. The manipulator in turn contains a lens, an optical element and an interspace formed between the lens and the optical element, which can be filled with a liquid. At least one actuator acting exclusively on the lens is furthermore provided, which can generate a rotationally asymmetric deformation of the lens.

Abstract: This focus test mask is provided with a test pattern that is projected onto a wafer via a projection optical system. This test pattern includes: a plurality of line patterns that are lined up in a direction of measurement; phase shift sections that are provided in areas adjacent to each of the plurality of line patterns and that are used to shift the phase of light passing through; and reference patterns that are used to obtain an image that forms a reference when the shift in the line pattern image is measured. Spaces between the plurality of line patterns are set at a size that allows each line pattern to be regarded as equivalent to being isolated lines.

Abstract: According to an exposure apparatus and an exposure method in the present invention, based on a focus value and a leveling value in each exposure shot calculated based on measurements by a focus sensor, differential absolute value for respective value are calculated. The differential absolute values for the focus values and leveling vaule are compared with predetermined threshold vaule for the respective differential absolute values. When the differential absolute values exceed the threshold value, it is determined that an exposure abnormality exists. In such case, based at least the number of exposure area where the exposure abnormality is occurred and distribution of the exposure area where the exposure abnormality is occurred on the object to be exposed, a kind of the exposure abnormality is identifed. The detection of the exposure abnormality is assured, and a cause of the abnormality is determined without lowering manufacturing capabilities and increasing in cost.

Abstract: The invention relates to an immersion lithography method which illuminates a substrate positioned on a carrier. When a substrate is illuminated, an immersion fluid is introduced between a reproducing element and the substrate and the field depth or the resolution, or both, are adjusted by varying the distance in the direction of the beam between an illuminating reticule and the surface of the substrate along a direction of movement of the carrier.

Abstract: Provided is an exposure apparatus including a projection optical system for projecting an exposure pattern onto an object to be exposed, a measurement device for measuring an optical performance of the projection optical system by guiding light to the projection optical system through a measurement pattern to detect interference fringes formed by the light emitted from the projection optical system, and an adjustment portion for adjusting a numerical aperture of the light that illuminates the measurement pattern, in which the adjustment portion adjusts the numerical aperture so that the visibility of the interference fringes V, which is defined as V=(Imax?Imin)/(Imax+Imin), is equal to or more than 0.3, where Imax represents the maximum amount of light of the interference fringes, and Imin represents the minimum amount of light of the interference fringes, when the measurement device measures an optical performance of the projection optical system.

Abstract: A method and system for correcting optical aberrations in a maskless lithography system. Adjusters move individual spatial light modulators (SLMs) in an SLM array so that the surface of the SLM array deviates from a flat plane. The deviation compensates for aberrations in the lithography system, such as total focus deviation. In an embodiment, an individual SLM can be tilted, bent, and/or have its elevation changed. Multiple SLMs in the SLM array can move in different ways depending on the compensation to be made. The adjusters can be either actively or passively controlled. The method may be performed only during initial setup of the maskless lithography system, periodically as needed for maintenance of the lithography system, or prior to each exposure in the lithography system.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: A projection objective having a number of adjustable optical elements is optimized with respect to a number of aberrations by specifying a set of parameters describing imaging properties of the objective, each parameter in the set having an absolute value at each of a plurality of field points in an image plane of the projection objective. At least one of the optical elements is adjusted such that for each of the parameters in the set, the field maximum of its absolute value is minimized.

Abstract: A method for imaging a mask pattern with small features through a lithographic system includes an illumination source and providing a uniaxial material having an ordinary index of refraction and a different extraordinary index of refraction. The extraordinary mode is modified such that the extraordinary mode is defocused relative to the ordinary mode. Light from the illumination source is passed through the material and focusing the ordinary mode on an image plane and defocusing the extraordinary mode relative to the image plane.

Abstract: A scatterometer has a radiation source capable of emitting radiation in distinct first and second wavelength ranges. An adjustable optical element is provided to effect a chromatic correction as necessary according to which wavelength range is in use. A single scatterometer can thereby effect measurements using widely separated wavelengths.

Abstract: An exposure system for manufacturing flat panel displays (FPDs) includes a reticle stage and a substrate stage. A magnification reflective optical system images the reticle onto the substrate. The system may be a 2× magnification system, or another magnification that is compatible with currently available mask sizes. By writing reticles with circuit pattern dimensions that are one-half the desired size for an FPD, a 2× optical system can be used to expose FPDs. The designs for the 1.5× and larger magnification optical systems all typically have at least three powered mirrors. A corrector, positioned either near the reticle or near the substrate, can be added to the three mirror design to improve the systems optical performance. The corrector may be a reflective, or a refractive design. The corrector can have an aspheric surface, and optionally a powered surface.

Abstract: Methods and systems for effecting responses on surfaces utilizing microlens arrays including microoptical components embedded or supported by a support element and positioned from the surface at a distance essentially equal to the image distance of the microoptical component with spacer elements are disclosed. Microlens arrays can be used to manipulate incident energy or radiation having a distribution in characteristic property(s) defining an object pattern to form a corresponding image pattern on a substrate surface. The energy can be light having a pattern or a specific wavelength, intensity or polarization or coherence alignment. The image pattern can have features of order 100 nm in size or less produced from corresponding object patterns having features in the order millimeters. The size of the object pattern can be reduced by the microlens arrays described by a factor of 100 or more using a single step process to form the image patterns.

Abstract: In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.

Abstract: When forming a magnified image of a mask pattern on an object with a plurality of projection optical systems, the mask pattern is minimized in size. A projection exposure apparatus relatively moves a mask and a substrate and forms a magnified image of a pattern of the mask. The apparatus includes projection optical systems, each having an enlargement magnification and forming an image of a pattern of the mask on the substrate. A first line segment formed by connecting view points of the projection optical systems on the mask and a second line segment formed by connecting conjugate points of the view points on the substrate form corresponding sides of two similar figures of which magnification ratio is the magnification.