Abstract: Embodiments generally relate to a light source and methods for minimizing temperature sensitivity of a light source light source. In one embodiment a light source includes a light-emitting diode, a light beam having an optical axis, a photodetector and a polarizer. The diode is operatively configured to emit the light beam. The beam splitter, positioned to intercept the light beam, includes a first optical surface operatively configured to reflect a first portion of the light beam and to transmit a second portion of the light beam therethrough. The photodetector is positioned to capture the first portion of the light beam after reflection by the beam splitter and operatively configured to generate photocurrent proportional to an intensity of that captured first portion. The polarizer is positioned between the diode and the beam splitter, and is operatively configured to polarize the light beam along a polarization direction perpendicular to its optical axis.

Abstract: Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are predetermined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.

Abstract: The invention relates to a method and to a device for determining at least one piece of polarization information on a measurement point of a target sample, the device comprising:—a light source capable of emitting a rectilinearly polarized light beam, the light beam being intended to be reflected by the measurement point;—a means for computing polarization information on the measurement point using the beam reflected by the target sample;—at least one waveguide for guiding the incident beam towards the target sample and the reflected beam towards the computing means; and—a means for rotating the polarization, capable of rotating two orthogonal polarimetric components of the incident beam after passing through the waveguide and two orthogonal polarimetric components of the reflected beam before passing through the waveguide.

Abstract: Systems and methods for discrete polarization scatterometry are provided.

Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.

Abstract: Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.

Abstract: An optical biosensor is provided for detecting a bio-molecular sample by Goos-Hänchen (GH) enhancement of Aharonov-Albert-Vaidman (AAV) amplification to a surface plasmon resonance (SPR) detector. The sensor includes pre- and post-selection polarizers respectively upstream and downstream of a right-isosceles prism with a metal film and a liquid medium disposed on a diagonal side of the prism. Laser light passes through the first polarizer, reflects at the film, passes through the second polarizer and is detected with a shift determined by a pointer estimator to indicate the sample.

Abstract: The invention concerns a method for exciting a sub-wavelength inclusion structure, comprising: providing a first medium having a first refractive index ni and a second medium having a second refractive index nt, wherein ni>nt, wherein the sub-wavelength inclusion structure is arranged at a boundary between the first and second media, wherein the sub-wavelength inclusion structure exhibits polarizability properties; and directing light through the first medium towards the sub-wavelength inclusion structure. The angle of the incident light to the normal of the boundary, ?i, is such that, for a given set of: frequency of the light; surface density of inclusions; average polarizability of the inclusion structure at the frequency; first refractive index; and second refractive index, ?i fulfils at least one of the relations for s-polarized light and for p-polarized light described herein.

Abstract: Various metrology systems and methods are provided. One metrology system includes a light source configured to produce a diffraction-limited light beam, an apodizer configured to shape the light beam in the entrance pupil of illumination optics, and optical elements configured to direct the diffraction-limited light beam from the apodizer to an illumination spot on a grating target on a wafer and to collect scattered light from the grating target. The metrology system further includes a field stop and a detector configured to detect the scattered light that passes through the field stop. In addition, the metrology system includes a computer system configured to determine a characteristic of the grating target using output of the detector.

Abstract: An optical metrology apparatus for measuring nanoimprint structures using Vacuum Ultra-Violet (VUV) light is described. Focusing optics focus light onto the sample and collect the light reflected from the sample so as to record an optical response from nanoimprint structures on the sample, wherein the nanoimprint structures have an orientation that varies over a surface of the sample. A sample stage is configured to support the sample. At least one computer is connected to the metrology instrument and the sample stage and is configured to run a computer program which causes the sample stage to rotate the sample so as to present multiple different locations on the sample to the optical metrology instrument such that the orientation of the nanoimprint structures at the multiple different locations remains fixed with respect to a plane of the focusing optics of the metrology instrument in order to eliminate polarization effects.

Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

Abstract: A target space ratio of a monitor pattern on a substrate for inspection is determined to be different from a ratio of 1:1. A range of space ratios in a library is determined to include the target space ratio and not include a space ratio of 1:1. The monitor pattern is formed on a film to be processed by performing predetermined processes on the substrate for inspection. Sizes of the monitor pattern are measured. The sizes of the monitor pattern are converted into sizes of a pattern of the film to be processed having a space ratio of 1:1, and processing conditions of the predetermined processes are compensated for based on the sizes of the converted pattern of the film to be processed. After that, the predetermined processes are performed on a wafer under the compensated conditions to form a pattern having a space ratio of 1:1 on the film to be processed.

Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (?S1) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (?S2) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (?S1) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (?S2) associated with the second scatterometry cell.

Abstract: In an optical position-measuring device for recording the relative position of a scanning unit and a measuring standard, the scanning unit includes a light source, first annular scanning graduation, reflector element, beamsplitter element, and detection unit. A beam emitted by the light source impinges on the measuring graduation and is split into at least two partial beams of rays. The partial beams propagate toward the scanning unit, impinge the first scanning graduation on the reflector element, are reflected through the first scanning graduation toward the measuring graduation, impinge the measuring graduation, propagate toward the scanning unit and undergo superposition, and are deflected by the beamsplitter element toward the detection unit. There, a plurality of positionally dependent, phase-shifted scanning signals can be recorded.

Abstract: An optical system is presented for use in measuring in patterned structures having vias. The system is configured and operable to enable measurement of a via profile parameters. The system comprises an illumination channel for propagating illuminated light onto the structure being measured, a detection channel for collecting light returned from the illuminated structure to a detection unit, and a modulating assembly configured and operable for implementing a dark-field detection mode by carrying out at least one of the following: affecting at least one parameter of light propagating along at least one of the illumination and detection channels, and affecting propagation of light along at least the detection channel.

Abstract: A laser output measuring apparatus in which an optical separator is disposed in a position that is rotated by a predetermined angle about an optical axis of a laser beam converged by a lens, and further rotated by a predetermined angle about the optical axis of the laser beam and a straight line perpendicular to an incident surface of the laser beam.

Abstract: An optical sensor includes a light source to illuminate a linear polarization in a first direction, a first optical detector disposed on a path of a light illuminated from the light source and specularly reflected by an object, a first optical element to separate the light reflected by the object into a linear polarization in the first direction and a linear polarization in a second direction orthogonal to the first direction, a second optical detector to receive the linear polarization in the second direction separated by the first optical element, and a processor to obtain an amount of the light specularly reflected by the object on the basis of an output signal of the first optical detector and an output signal of the second optical detector.

Abstract: The present invention relates to a method of measuring surface properties of a polishing pad which measures surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The method of measuring surface properties of a polishing pad includes applying a laser beam to the polishing pad, detecting scattered light that is reflected and scattered by the polishing pad with a photodetector and performing an optical Fourier transform on the detected scattered light to produce an intensity distribution corresponding to a spatial wavelength spectrum based on surface topography of the polishing pad, and calculating a numerical value representing surface properties of the polishing pad based on the intensity distribution corresponding to two different prescribed spatial wavelength ranges.

Abstract: The present invention relates to an apparatus for measuring surface properties of a polishing pad which measures surface properties such as surface topography or surface condition of a polishing pad used for polishing a substrate such as a semiconductor wafer. The apparatus for measuring surface properties of a polishing pad includes a laser beam source configured to emit a laser beam, and a photodetector configured to detect scattered light that is reflected and scattered by the polishing pad, an optical Fourier transform being performed on the detected scattered light to produce an intensity distribution corresponding to a spatial wavelength spectrum based on surface topography of the polishing pad. The laser beam is applied to the polishing pad at such an incident angle that the laser beam does not reach a bottom portion of a pore formed in the surface of the polishing pad.

Abstract: An optical tracking device that is capable of operation on both glossy and diffuse surfaces includes at least one housing, at least one light source, and at least one sensor. The light source emits light toward a surface on which the housing is moved and the sensor receives the light emitted by the light source after it is reflected off of the surface. The light source is oriented such that the angle of incidence of the emitted light corresponds to Brewster's angle. The sensor may be also oriented such that the angle of reflection of the reflected light corresponds to Brewster's angle. The light emitted by the light source may be polarized to increase the p-polarization of the emitted light and/or the light received by the sensor may be filtered to block s-polarized portions of the reflected light.

Abstract: An analysis device includes an optical element which includes a metal layer, a light transmitting layer on the metal layer, and a plurality of metal particles on the light transmitting layer arranged at a first interval P1 in a first direction and arranged at a second interval P2 in a second direction intersecting the first direction, P1<P2?Q+P1, a light source which irradiates incident light of linearly polarized light in the first direction onto the optical element, and a detector which detects light emitted from the optical element. Where Q represents the interval between diffraction gratings.

Abstract: A defect inspecting apparatus includes an irradiation optical system having a light source that emits illumination light and a polarization generation part that adjusts polarization state of the illumination light emitted from the light source, a detection optical system having a polarization analysis part that adjusts polarization state of scattered light from a sample irradiated by the irradiation optical system and a detection part that detects the scattered light adjusted by the polarization analysis part, and a signal processing system that processes the scattered light detected by the detection optical system to detect a defect presenting in the sample. The polarization generation part adjusts the polarization state of the illumination light emitted from the light source on the basis of predetermined illumination conditions and the polarization analysis part adjusts the polarization state of the illumination light emitted from the light source on the basis of predetermined detection conditions.

Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.

Abstract: Provided is a real-time spectroscopic ellipsometer capable of obtaining information on properties of a sample, a nano pattern shape, in real time by measuring and analyzing, for a plurality of wavelengths, a change in a polarization state of incident light generated while being reflected or transmitted due to the sample when light having a specific polarization component is incident to the sample.

Abstract: A plate-shaped periodic structure is provided that includes at least two aperture portions extending through the periodic structure in a direction perpendicular to a main surface of the periodic structure and periodically arranged in at least one direction along the main surface. Each of the aperture portions has a shape that is not mirror-symmetric with respect to an imaginary plane that is a plane perpendicular to the main surface. Each of the aperture portions includes a constricted portion at which a gap distance of the aperture portion is partially small, the gap distance being a width in a direction parallel to a line of intersection of the main surface and the imaginary plane.

Abstract: A system to detect and classify defects on a surface of a substrate. A first targeting assembly directs radiation in a first beam onto the substrate. A first collecting assembly collects first radiation specularly reflected from the substrate and produces first signals, a second collecting assembly collects first radiation scattered from the surface of the substrate by defects and not micro-roughness and produces second signals, and a third collecting assembly collects first radiation scattered from the surface of the substrate by defects and micro-roughness and produces third signals. A second targeting assembly directs radiation in a second beam onto the substrate. A fourth collecting assembly collects second radiation scattered from the substrate and produces fourth signals. A processor receives the first, second, third, and fourth signals.

Abstract: The invention relates to an optoelectronic sensor element (20) having at least one reception element (22, 22a, 22b, 22c, 22d) in front of which a polarizing structure (24, 24a, 24b, 24c, 24d) is arranged which is manufactured from an electrically conductive material, with the polarizing structure (24, 24a, 24b, 24c, 24d) having a contact connection (26) for the application of a defined tension and with the polarizing structure (24, 24a, 24b, 24c, 24d) being configured as a screen of the sensor element (20).

Abstract: Determining line edge roughness comprises reflecting at least one radiation beam off the object, observing a first optical response signature from a beam reflected from the object, or a component thereof, being polarized with an electrical vector in a first orientation relative to the object; and observing a second optical response signature from a beam reflected from the object, or a component thereof, being polarized with an electrical vector in a second orientation relative to the object. Line edge roughness can then be determined from the two optical response signatures.

Abstract: A method for determining a surface profile of subject's skin includes illuminating the subject with light from a plurality of light sources. The plurality of light sources having distinct colors is configured to illuminate the subject from distinct locations. A multi-color image of the subject is obtained. The multi-color image includes respective values corresponding to respective intensities of light of respective colors for each region of the subject. A surface profile of the subject is determined in accordance with the respective values corresponding to the respective intensities of light of the respective colors.

Abstract: A paper sheet recognition apparatus that recognizes a paper sheet based on optical characteristics of the paper sheet is proposed. The paper sheet recognition apparatus includes at least one light source that emits a light toward the paper sheet; a light-guiding member that receives any of reflected lights reflected from plural regions on the paper sheet and transmitted lights that have passed through plural regions on the paper sheet because of emission of the light on the paper sheet from the light source, condenses the received lights, and outputs the condensed light from a light outputting section; an optical processing unit that generates spectral distribution from the condensed light output from the light outputting section of the light-guiding member; and a recognition processing unit that recognizes the paper sheet based on a feature of the spectral distribution generated by the optical processing unit.

Abstract: A method and device for remotely detecting structural integrity using reflections or scattering from windows or other portions of a structure. The long geometrical lever arm of a reflection on a building window, when viewed with suitable instruments, produces detectable modulation in the reflected light from minute vibrational changes upon the glass surface, revealing fundamental resonances and structural changes and failure in the building housing the window. By sensing very small changes in intensity and polarization, information may be obtained on fundamental resonances and structural changes, including failure or imminent failure of the structure.

Abstract: Four separately polarized beams are simultaneously measured upon diffraction from a substrate (W) to determine properties of the substrate. Linearly, circularly or elliptically polarized radiation is transmitted through a first beam splitter (N-PBS) and split into two polarized beams. These two beams are further split into two further beams using two further beam splitters, the further beam splitters (32,34) being rotated by 45° with respect to each other. The plurality of polarizing beam splitters enables the measurement of the intensity of all four beams and thus the measurement of the phase modulation and amplitude of the combined beams to give the features of the substrate. Algorithms are used to compare the four intensities of each of the polarized angles to give rise to the phase difference between the polarization directions and the ratio between the two main polarization direction amplitudes of the original polarized beam.

Abstract: A method of microscopy and an illumination optical device with a hollow cone for a microscope, the illumination device includes a first conical lens (1) able to receive a collimated incident light beam (10) and form a conical light beam (20), a second conical lens (5) arranged in such a way as to receive the conical light beam (20, 40) and to form a cylindrical light beam with a black background (50) and an optical lens (6) having an image focal plane (12) arranged in such a way as to receive the cylindrical light beam with a black background (50), to form a hollow cone light beam (60) and to focus the hollow cone light beam (60) into a point (18) in the image focal plane (12).

Abstract: An apparatus for detecting a defect of an object may include a light emitter configured to emit straight polarized lights having different polarized directions, a spatial filter having openings through which the straight polarized lights selectively pass, an optical member configured to condense the straight polarized lights, which pass through the openings, on the object, and a light detector configured to detect lights reflected from the object. Thus, the defect may be accurately detected in a short time.

Abstract: An oblique incidence broadband spectroscopic polarimeter which is easy to adjust the focus, achromatic, maintains the polarization and has simple structure is provided. It comprise at least one polarizer (P, A), at least one curved reflector element (OAP1, OAP2, OAP3, OAP4) and at least two flat reflector elements (M1, M2). By utilizing the flat reflector element, the oblique incidence broadband spectroscopic polarimeter can change the propagate direction of beam, and compensate the polarization changes caused by the reflective focusing unit, make the polarization of beam passed the polarizer unchanged when obliquely incident and focus on the sample surface. The oblique incidence broadband spectroscopic polarimeter can accurately measure the optical constants of sample material, film thickness, and/or the critical dimension (CD) properties or three-dimensional profile for analyze the periodic structure of the sample.

Abstract: The present invention comprises an approach for calibrating the sensitivity to polarization, optics degradation, spectral and stray light response functions of instruments on orbit. The concept is based on using an accurate ground-based laser system, Ground-to-Space Laser Calibration (GSLC), transmitting laser light to instrument on orbit during nighttime substantially clear-sky conditions. To minimize atmospheric contribution to the calibration uncertainty the calibration cycles should be performed in short time intervals, and all required measurements are designed to be relative. The calibration cycles involve ground operations with laser beam polarization and wavelength changes.

Abstract: A surface defect inspection apparatus and method is provided which illuminates a plurality of beams set to different intensity values to a sample. Scattered light from the plurality of beams is detected and processed to analyze the surface defects.

Abstract: A novel technique for model-based metrology. A geometry of structure to be measured on a surface of a substrate is received. A tessellation of the geometry of the structure is produced. The tessellation is used to determine a vertical discretization and a horizontal discretization so as to generate a discrete model for the geometry, and scatterometry computations are performed using the discrete model. Other embodiments, aspects and features are also disclosed.

Abstract: A combination of a focusing element, and a filtering element which naturally adjusts the cross-sectional area of a beam of electromagnetic radiation passed through the focusing element as a function of wavelength, optionally as an element of an ellipsometer or polarimeter system.

Abstract: A method for detecting ultra-fine features of an integrated circuit (IC) on a semiconductor substrate is disclosed. The semiconductor substrate comprises an IC fabricated by 22 nanometer or smaller scale semiconductor micro-fabrication process. The integrated circuit includes circuit features parallel to a circuit horizontal direction or a circuit vertical direction. The method includes focusing an incident light to produce a focused light spot on a portion of the IC. The incident light is linearly polarized in a linear polarization substantially parallel to the circuit horizontal direction. The method includes detecting reflected light from the portion of the IC, producing a relative movement between the focused light spot and the IC to allow the focused light to illuminate different portions of the IC, obtaining an image of the IC using signals of the reflected light detected from different locations of the integrated circuit, and detecting IC features in the image.

Abstract: Computer driven systems and methods involving at least one electromagnetic beam focuser and digital light processor that in combination serve to position selected wavelengths in a spectroscopic electromagnetic beam onto a small spot on a sample, and direct the one or more selected wavelengths reflected by the sample into, while diverting other wavelengths away from, a detector.

Abstract: Representative implementations of devices and techniques provide selectivity for imaging devices and systems. Polarization may be applied to emitted light radiation and/or received light radiation to select a desired imaging result. Using polarization, an imaging device or system can pass desired light radiation having desired information and reject unwanted or stray light radiation.

Abstract: An optical measuring apparatus may include a light source, linear polarizer, polarized beam splitter, quarter wave plate, objective lens, and/or light receiver. The polarized beam splitter may be configured to transmit linearly polarized light from the linear polarizer to any one of a first and second optical path. The quarter wave plate may be configured to circularly polarize light transmitted through the first optical path from the polarized beam splitter and transmit the circularly polarized light to an object to be measured, and the quarter wave plate may be configured to linearly polarize the circularly polarized light reflected from the object to be measured and transmit the linearly polarized reflected light to the second optical path of the polarized beam splitter. The objective lens may be configured to generate light having different wavelengths by generating chromatic aberration in the circularly polarized light from the quarter wave plate.

Abstract: Multi-spectral defect inspection for 3D wafers is provided. One system configured to detect defects in one or more structures formed on a wafer includes an illumination subsystem configured to direct light in discrete spectral bands to the one or more structures formed on the wafer. At least some of the discrete spectral bands are in the near infrared (NIR) wavelength range. Each of the discrete spectral bands has a bandpass that is less than 100 nm. The system also includes a detection subsystem configured to generate output responsive to light in the discrete spectral bands reflected from the one or more structures. In addition, the system includes a computer subsystem configured to detect defects in the one or more structures on the wafer using the output.

Abstract: A defect inspecting apparatus inspects defects of a sample having a pattern formed on the surface. The defect inspecting apparatus is provided with a stage which has a sample placed thereon and linearly moves and turns; a light source; an illuminating optical system, which selects a discretionary wavelength region from the light source and epi-illuminates the sample surface through a polarizer and an objective lens; a detecting optical system, which obtains a pupil image, by passing through reflection light applied by the illuminating optical system from the surface of the sample through the objective lens and an analyzer which satisfies the cross-nichols conditions with the polarizer; and a detecting section which detects defects of the sample by comparing the obtained pupil image with a previously stored pupil image. Conformity of the pattern on a substrate to be inspected can be judged in a short time.

Abstract: The fiber direction of a carbon fiber material of a test object is detected by means of the polarization direction of light reflected by the test object. If, for example, non-polarized light impinges upon carbon fibers, light reflected by the fibers is polarized in fiber direction.

Abstract: A scatterometer configured to measure a property of a substrate, includes a radiation source configured to provide a radiation beam; and a detector configured to detect a spectrum of the radiation beam reflected from a target (30) on the surface of the substrate (W) and to produce a measurement signal representative of the spectrum. The apparatus includes a beam shaper (51, 53) interposed in the radiation path between the radiation source and the detector, the beam shaper being configured to adjust the cross section of the beam dependent on the shape and/or size of the target.

Abstract: The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.

Abstract: The present invention provides a prism. The prism includes a lower surface, an upper surface, a first side surface and a second side surface. The first side surface and the second side surface are disposed between the upper surface and the lower surface. The first side surface and the second side surface of the prism are one-dimensional parabolic surfaces. The lower surface is used to receive light. The first side surface is used to reflect the light from the lower surface to the upper surface. The second side surface is used to reflect the light from the upper surface to the lower surface for further analysis in the process unit afterwards.

Abstract: A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time.