Abstract: A method for calibrating an apparatus for ellipsometric measurements performed on an arbitrarily large or continuously moving sample, using a visible sample reference frame, and one or more laser sources in order to calibrate the ellipsometer for variations in the distance between the ellipsometer apparatus and the sample of interest. Included are techniques for projecting a first laser beam spot from an incident laser source onto a sample, then analyzing the position of the first laser beam spot relative to the center of the sample reference frame using human-aided measurements and confirmations and/or computer vision techniques. Then adjusting pivot points and/or apparatus-to-sample distance to achieve a first beam spot being located about the center of the sample reference frame, and concurrently intersecting the plane of the sample. Other techniques include changing the incidence and reflectance angle using a semi-circular track arc design with a stepping motor activating each goniometer arm.

Abstract: A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while, maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.

Abstract: A spectroscopic system for adjusting spacing between an adjacent source/detector as a unit, and a sample, and a reflecting means for directing an incident beam which reflects from said sample back onto said sample and then into the detector along a locus which is in a plane of incidence that is offset from that of the incident beam, or directly from the reflecting means into the detector, including means for reducing reflections of a beam of electromagnetic from the back of a sample, including methodology of use.

Abstract: A method for determining the thickness of a film on a substrate is described. The substrate has a first major surface opposite a second major surface, and the film covers a portion of the first major surface. During a first measurement step, a first measuring beam is used to determine the distance from a first reference point to a portion of the first major surface of the substrate that is not covered with the film, and a second measuring beam is used to determine the distance from a second reference point to a portion of the second major surface of the substrate that is not covered with film. During a second measurement step the first measuring beam is used to determine the distance from the first reference point to the film, and the second measuring beam is used to determine the distance from the second reference point to a portion of the second major surface of the substrate that is not covered with film.

Abstract: Methods and systems for providing illumination of a specimen for inspection are provided. One embodiment relates to a system configured to provide illumination of a specimen for inspection. The system includes an electrodeless lamp configured to generate light. The system is further configured such that the light illuminates the specimen during the inspection. Another embodiment relates to a system configured to inspect a specimen. The system includes an electrodeless lamp configured to generate light and one or more optical elements configured to direct the light to the specimen. The system also includes a detection subsystem configured to generate output responsive to light from the specimen. The output can be used to detect defects on the specimen. An additional embodiment relates to a method for providing illumination of a specimen for inspection. The method includes illuminating the specimen during the inspection with light generated by an electrodeless lamp.

Abstract: A resonant optical cavity ellipsometer system is provided. The system can be used to conduct time-dependent arid sensitive measurement of ellipsometric parameters of matter. In a particular use, the system can provide time resolution abetter than 1 microsecond. In a particular implementation, matter can be probed within the evanescent wave generated by intra-cavity total reflection.

Abstract: Methods of monitoring critical dimensions in a semiconductor fabrication process include capturing at least one image of a first structure that has an effect on the polarization state of light reflected therefrom. For at least some of the first structure images, a value is calculated indicative of intensity of light reflected from the first structure. A critical dimension of the first structure is obtained and correlated with the calculated value. At least one image of a subsequent structure is captured. A determination is made, based at least in part on the calculated value, of a critical dimension of the subsequent structure.

Abstract: A surface inspecting apparatus includes an illumination optical system irradiating linearly polarized light to a wafer surface under a plurality of inspection conditions; an imaging optical system capturing an image of the wafer formed by polarization components having an oscillation direction different from that of the linearly polarized light as part of reflected light from the wafer surface irradiated by the linearly polarized light under the plurality of inspection conditions; and an image-processing apparatus for extracting for individual pixels an image having the smallest signal intensity from among images of the wafer captured under the plurality of inspection conditions by the imaging optical system, and for inspecting for the presence of defects in a repeated pattern of the wafer based on an inspection image of the wafer generated by connecting each of the extracted pixels.

Abstract: A system for monitoring thin-film fabrication processes is herein disclosed. Diffraction of incident light is measured and the results are compared to a predictive model based on at least one idealized or nominal structure. The model and/or the measurement of diffracted incident light may be modified using the output of one or more additional metrology systems.

Abstract: An alignment measurement system measures an alignment target on an object. A measurement illuminates the target and is reflected. The reflected measurement beam is split and its parts are differently polarized. A detector receives the reflected measurement beam. A processing unit determines alignment on the basis of the measurement beam received by the detector. An alternative arrangement utilizes an optical dispersive fiber to guide a multi-wavelength measurement beam reflected from the object to a detector.

Abstract: System for, and method of ellipsometric investigation of and analysis of samples which have, for instance, a non-random effectively “regular” textured surface, and/or a surface characterized by an irregular array of faceted structures.

Abstract: Provided is a multi-channel surface plasmon resonance sensor using beam profile ellipsometry; and, more particularly, to a high sensitive measuring technology, which is coupled with a vertical illumination type focused-beam ellipsometer using a multi-incident angle measurement method, and a surface plasmon resonance (SPR) sensing part deposited with a metal thin film. The multi-channel surface plasmon resonance sensor includes a vertical illumination type focused-beam ellipsometer, in which light is polarized; a surface plasmon resonance (SPR) sensing part which is provided at the objective lens part of the focused-beam ellipsometer so as to generate SPR according to an angle change of the polarized light; and a flow unit which supplies a buffer solution containing a bio material binding to or dissociation from the metal thin film generating surface plasmon, wherein the SPR and the ellipsometric phase change by change in an angle and a wavelength are simultaneously detected.

Abstract: A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.

Abstract: A phase retardance inspection instrument, comprising: a light source module for generating a single-wavelength light beam; a circularly polarized light generating module, comprising a polarizer and a first phase retarder, for receiving the single-wavelength light beam as it is guided to pass through the polarizer and the first phase retarder in order; and a detecting module, comprising a second phase retarder, a polarizing beam splitter, a first image sensor and a second image sensor, for receiving and guiding a circularly polarized light beam to travel through the second phase retarder and the polarizing beam splitter in order after it passes through a substrate under inspection, wherein the polarizing beam splitter splits an elliptically polarized light beam into intensity vector components of a left-hand circularly polarized light beam and a right-hand circularly polarized light beam, which are to be emitted into the first image sensor and the second image sensor, respectively.

Abstract: There is provided a surface inspection device configured to detect the surface state of the wafer, such as a defect in the uppermost layer and a variation of the CD value, using even diffracted light influenced by the baselayer. The surface inspection device is configured so that an illumination section illuminates the surface of a wafer with a first illuminating light at a high incident angle which is sensitive to a variation of the surface state of the wafer and a second illuminating light at a low incident angle which is insensitive thereto, a detection section detects diffracted light caused by the high and low incident angles, respectively, and a computing unit determines the CD value after correcting the influence of the baselayer of the wafer based on the information relating to the diffracted lights due to the high and low incident angles.

Abstract: A method and apparatus for convolving spectroscopic data with certain phase information for practicing phase-compensated sensitivity-enhanced spectroscopy (PCSES). PCSES uses a beam of radiation in a polarization state PSp from a source emitting at a plurality of wavelengths, and places in the beam a compensator capable of altering polarization state PSp by applying a delimited phase shift ? between two orthogonal polarization axes of the radiation to restrict a finely-vibrating spectrum. A sample disposed in the beam after the compensator generates a response beam by reflection, transmission or even both. A polarization state PSa of the response beam is passed to a detector to determine a spectrum of the response beam. A first spectrum is collected when polarization states PSp, PSa and the compensator are in a first polarization-altering configuration and a second spectrum is collected when polarization states PSp, PSa and the compensator are in a second polarization-altering configuration.

Abstract: A system is configured to measure two separately polarized beams upon diffraction from a substrate in order to determine properties of a grating on a substrate. Linearly polarized light sources are passed via a fixed phase retarder in order to change the phase of one of two orthogonally polarized radiation beams with respect to the other of the two beams. The relative phases of the two radiation beams and other features of the beams as measured in a detector gives rise to properties of the substrate surface. The grating and the initial linear polarization of the radiation beam are angled non-orthogonally relative to each other.

Abstract: An inspection system and a method. The method may include: illuminating the object with impinging light of a first polarization; performing a polarization based filtering of (a) multiple-reflected light signals, each multiple-reflected light signal being reflected from at least two different bevel side surfaces of the object, and (b) additional light signals, each additional light signal being reflected from a single element of the object, such as to suppress the multiple-reflected light signals, and to provide polarization based filtered light signals; and detecting the polarization based filtered light signals.

Abstract: A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

Abstract: A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.

Abstract: Methods and apparatus for measuring ion implant dose in a material provide for: measuring a reflection spectrum through an implantation surface of the material, the implantation surface having been subjected to an ion implantation process to create a material layer from the implantation surface to a depth within the material and a layer of weakness below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface; and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at least two corresponding wavelengths of the incident light.

Abstract: A terahertz spectroscopic apparatus includes a polarization beam splitter transmitting or reflecting a linearly polarized terahertz wave, a quarter wave plate imparting a phase difference of 90° to a terahertz wave impinging thereon, and an optical member guiding a circularly polarized terahertz wave impinging thereon from the polarization beam splitter via the quarter wave plate to an irradiation surface.

Abstract: A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.

Abstract: A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.

Abstract: The invention relates to a detector and a method, adapted for detecting a birefringent object near a surface, and to a shaving device adapted for detecting and for cutting a hair near a skin surface of a human body part or an animal body part.

Abstract: A method and a system for the enhancement of the sensitivity in surface plasmon resonance (SPR) sensors based metallic grating by exploiting the conical configuration is presented. We consider the propagation of surface plasmon polaritons (SPPs) excited by light from the visible to infrared spectrum range, incident on a plasmonic grating at different directions by varying both the zenith and azimuthal angles. For specific azimuthal angles, SPPs propagate in the grating plane perpendicular to the incident light momentum. This is the condition that allows increasing the number of different excited SPPs modes largely. We exploit this effect to increase the sensor sensitivity with the change of refractive index of thin film on the plasmonic grating surface. Polarization effects also contribute to a further modes enhancement and increase the sensitivity. A scheme for a lab-on-chip implementation of a system that allows a parallel detection in microfluidic channels has been shown.

Abstract: The invention concerns an optical component for observing a sample, which includes a substrate and at least one complex index layer of predetermined thickness, designed to show a high intensity or color contrast for optical path variations, reliefs, nanometric thicknesses and diameters when it is observed by incoherent light reflection convergent around the normal incidence under polarization extinction conditions. The upper index layer has specific surface properties providing it with selective affinity relative to at least one characteristic of the sample. An analysis system includes such a component, an analysis method using the component and uses of the method.

Abstract: Systems and methods for discrete polarization scatterometry are provided.

Abstract: A method and apparatus for testing a magnetic medium. The method comprises applying a magnetic field of a time-varying strength; directing a polarized optical beam towards a portion of the medium that is in the magnetic field, wherein the optical beam is reflected by a surface of the medium at a point of incidence in the magnetic field; moving the medium relative to the optical beam so as to cause the point of incidence to repeatedly traverse each of a plurality of sectors along a track on the surface; obtaining a series of Kerr signal measurements of the reflected optical beam; grouping measurements into ensembles such that the measurements in an individual ensemble are those obtained while the point of incidence was in a corresponding one of the sectors; and determining at least one magnetic property of at least one of the sectors from the measurements in the corresponding ensemble.

Abstract: A method of obtaining information about a target by using an ellipsometric technique of illuminating the target with coherent light beams from moveable light sources and recording reflections from the target. By analyzing the reflections, the surface material refractive index or dielectric tensors may be classified to yield information about the surface material properties. The beams can be emitted at different polarities and/or different frequencies. Ultra-coherent lasers can be used to produce beams that illuminate targets up to 100 kilometers from the beam source.

Abstract: A defect inspection apparatus includes an illumination optical system, a detection optical system which includes a reflecting objective lens, and wavelength separation optics for conducting wavelength separation, and after the wavelength separation, branching the scattered light into at least a first detection optical path and a second detection optical path. The detection optical system further includes, on the first detection optical path, a first sensor, and on the second detection optical path, a second sensor. A signal processor is provided which, in accordance with at least one of a first signal obtained from the first sensor and a second signal obtained from the second sensor, discriminates defects or defect candidates present on a surface of a sample.

Abstract: The invention relates to a method and to a device for determining at least one piece of polarisation information on a measurement point of a target sample, the device comprising: —a light source capable of emitting a rectilinearly polarised light beam, the light beam being intended to be reflected by the measurement point; —a means for computing polarisation information on the measurement point using the beam reflected by the target sample; —at least one waveguide for guiding the incident beam towards the target sample and the reflected beam towards the computing means; and—a means for rotating the polarisation, capable of rotating two orthogonal polarimetric components of the incident beam after passing through the waveguide and two orthogonal polarimetric components of the reflected beam before passing through the waveguide.

Abstract: This application describes designs, implementations, and techniques for controlling propagation mode or modes of light in a common optical path, which may include one or more waveguides, to sense a sample.

Abstract: A system and method of use thereof that enables determining and setting sample alignment based on the location of, and geometric attributes of a monitored image formed by reflection of an electromagnetic beam from a sample and into an image monitor, which beam is directed to be incident onto the sample along a locus which is substantially normal to the surface of the sample.

Abstract: System for, and method of ellipsometric investigation of and analysis of samples which have, for instance, a non-random effectively “regular” textured surface, and/or a surface characterized by an irregular array of faceted structures.

Abstract: An optical metrology method is disclosed for evaluating the uniformity of characteristics within a semiconductor region having repeating features such a memory die. The method includes obtaining measurements with a probe laser beam having a spot size on the order of micron. These measurements are compared to calibration information obtained from calibration measurements. The calibration information is derived by measuring calibration samples with the probe laser beam and at least one other technology having added information content. In the preferred embodiment, the other technology includes at least one of spectroscopic reflectometry or spectroscopic ellipsometry.

Abstract: The present invention provides an apparatus and a method for reviewing a defect with high throughput by detecting the defect to be reviewed with high sensitivity, comprising: an optical microscope; a correction means; and a scanning electron microscope which reviews the existing defect on the sample; wherein the optical microscope has: an optical height detection system which optically detects a vertical position of an upper surface of the sample placed on the stage; an illumination optical system which illuminates the defect with light; an image detection optical system which converges and detects reflected light or scattered light generated from the defect illuminated by the illumination optical system to obtain an image signal; and a focus adjusting means which adjusts a focus position of the optical microscope based on the vertical position of the upper surface of the sample, which is detected by the optical height detection system.

Abstract: A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.

Abstract: A defect inspection apparatus and method includes utilizing an irradiation optical system that focuses a beam flux emitted from a laser light source and formed into a slit-shaped beam so as to irradiate the beam onto the surface of the substrate to be inspected, utilizing a detection optical system that detects light from the substrate that has been irradiated with the slit-shaped beam, and utilizing a signal processor that processes a signal output from the detection optical system. The irradiation optical system includes a cylindrical lens for focusing the beam that has been emitted from the laser light source onto the substrate to be inspected, as the slit-shaped beam, wherein the cylindrical lens is disposed so as to obtain a distance between an incidence surface or emitting surface thereof and the slit-shaped beam upon the substrate to be inspected to be equal to a focal distance of the cylindrical lens.

Abstract: An illuminating optical system of an inspection device selects an arbitrary wavelength region from the light source, and epi-illuminates the sample via the polarizer and the objective lens. A detecting optical system includes an analyzer having a polarization plane intersected with a polarization direction of the polarizer. Then, the detecting optical system detects light from the sample via the objective lens and the analyzer, and acquires a Fourier image of a sample surface based on this light. An imaging section images the Fourier image. An analyzing section performs computation for processing for determining a notable area to be affected by a state of the pattern more than other areas in the Fourier image.

Abstract: Methods and apparatus for measuring an optical azimuth angle ?O of a substrate relative to a plane of detection in scatterometry tools are disclosed. A grating target on a stage of a scatterometry tool may be illuminated and positions of the resulting diffraction orders may be observed. The optical azimuth angle may be determined from the positions of the diffraction orders. Alternatively, polarization-dependent signals of radiation scattered from a line grating may be measured for equal and opposite polarization angles +A and ?A. A combination signal may be computed from the polarization-dependent signals obtained at +A and ?A and a property of the combination signal may be calculated for several mechanical Azimuth angles ?M. A relationship between the optical azimuth angle ?O and the mechanical azimuth angle ?M may be determined from a behavior of the property as a function of mechanical azimuth angle ?M.

Abstract: In an evaluation device (1), an analyzer (42) is rotated so that the azimuth of the transmission axis of the analyzer (42) has an inclination angle of 90 degrees±3 degrees with respect to the transmission axis of a polarizer (32), an imaging camera (44) captures a regularly reflected image of a wafer (10) under each condition, and an image processing unit (50) evaluates the shape of a repeating pattern and detects dose defects and focus defects on the basis of the two images of the wafer (10) captured by the imaging camera (44).

Abstract: Provided is a multi-channel surface plasmon resonance sensor using beam profile ellipsometry; and, more particularly, to a high sensitive measuring technology, which is coupled with a vertical illumination type focused-beam ellipsometer using a multi-incident angle measurement method, and a surface plasmon resonance (SPR) sensing part deposited with a metal thin film The multi-channel surface plasmon resonance sensor includes a vertical illumination type focused-beam ellipsometer in which light is polarized; a surface plasmon resonance (SPR) sensing part which is provided at the objective lens part of the focused-beam ellipsometer; and a multi-channel flow unit which supplies a buffer solution containing a bio material binding to or dissociation from a metal thin film generating surface plasmon.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: Systems which utilize electromagnetic radiation to investigate samples and include at least one spatial filter which has an aperture having an opening therethrough of an arbitrary shape, including methodology for fabracting the aperture on an end of an optical fiber per se.

Abstract: The present invention relates to a single-polarizer focused-beam ellipsometer. An ellipsometer according to the present invention includes a light source (210); a beam splitting part (220) for splitting a light generated in the light source (210) into a polarized light; an objective lens (230) for concentrately irradiating some of light split by the beam splitting part (220) onto a specimen (240); a photodetector (250) for detecting the light passed through the objective lens 230 and the beam splitting part (220) after reflected from the specimen (240) with unit cells; and a central processing unit (260) for correcting the intensity of the light detected by the photodetector (250) into a value corresponding to the unit cell of the photodetector (250) along multiple incidence plane passage of 360° with respect to respective incidence angles and processing the corrected value.

Abstract: Methods and apparatus for measuring thickness of a thin film include: obtaining a high-speed thickness measurement of a thin film using a laser projection system and detector array, obtaining thickness measurements of the thin film at one or more locations using a single-point measurement apparatus and determining the accuracy of the high-speed measurement values by comparing them to one or more of the absolute thickness values of the film as measured by the single-point measurement apparatus.

Abstract: In one embodiment, a wafer alignment system, comprises a radiation source to generate radiation, a radiation directing assembly to direct at least a portion of the radiation onto a surface of a wafer, the radiation having a polarization state, an optical analyzer to collect at least a portion of the radiation reflected from the wafer, the wafer including at least a first region having a first grating pattern oriented in a first direction and at least a second region having a second grating pattern oriented in a second direction, different from the first direction.

Abstract: The present invention relates to an ellipsometer, and more particularly, to an ellipsometer to find out the optical properties of the sample by analyzing the variation of the polarization of a light which has specific polarisation then reflected on a surface of the sample.

Abstract: A method is provided for detection of analytes using the Surface Plasmon Resonance effect. The method comprises providing a metal film on a transparent substrate. The free surface of the metal film is exposed to a test sample. An anlyte in the sample can interact directly with the metal film or via analyte binding molecules (ABMs) complexed to the film. Light is directed incident to the surface of film in contact with the substrate. Light is reflected from the surface of the film under SPR conditions. The reflected light is collected and the second and/or third harmonics of the resulting electrical signal, which are indicative of the phase and polarization state of the reflected light, are determined. The second and third harmonics are correlated to the presence and/or concentration of the analyte.