Abstract: This perpendicular magnetic recording medium has a nonmagnetic substrate and a magnetic recording structure formed above the substrate. The magnetic recording structure has at least a soft magnetic underlayer, an intermediate layer and a magnetic layer. The substrate has a surface profile curve whose angle of inclination is 2.0 degree or less, or whose surface roughness of the substrate, with cycle (wavelength components) in the ranges of 83 nm or less to 30 nm or less, is 0.15 nm or less.

Abstract: A magnetic head testing apparatus having the function of evaluating pin holes in a tunnel barrier layer of a TMR element by a non destructive inspection is disclosed. The testing apparatus comprises a temperature control unit which sets a circumferential temperature of a TMR element, a bias electric current control unit which applies an electric current for measuring a resistance value, an element resistance measuring unit and a CPU which calculates a temperature coefficient. The CPU determines a pin hole state in the tunnel barrier layer based on the temperature coefficient.

Abstract: A sensor for sensing a magnetic field direction has a plurality of magnetoresistive sensor elements, each of which having a main sensitivity direction with respect to a present magnetic field. Lines associated with the main sensitivity directions of the magnetoresistive sensor elements and passing through the magnetoresistive sensor elements intersect in an area outside the magnetoresistive sensor elements themselves.

Abstract: An electronic device free from variation of conductivity is provided. The electronic device 100 includes electrodes 2 and 3; and a metal conductor thin film 7 electrically connected to the electrodes 2 and 3. The metal conductor thin film 7 includes a metal conductor portion 1 that bridges a gap between the electrodes 2 and 3. The bridge length L of the metal conductor portion 1 is not more than a mean free path ? of electron in the metal conductor portion 1 at the operation temperature of the electronic device 1. The electronic device 100 is formed by forming the electrodes 2 and 3 on the substrate 8 with a gap having the bridge length L; forming a support 4 that includes at least one selected from the group consisting of a nano-tube and a nano-wire and bridges a gap between the electrodes 2 and 3; and forming the metal conductor portion 1 by depositing the metal conductor thin film 7 on the support 4, and the electrodes 2 and 3.

Abstract: A hard disk drive slider comprises a tunneling magnetoresistance transducer, which comprises an insulator barrier. A nitrogen atom from a nitrogen atmosphere occupies an oxygen atom vacancy within the insulator barrier, such that noise in read data from the tunneling magnetoresistance transducer is reduced.

Abstract: A testing method of a thin-film magnetic head has an MR read head element with a multi-layered structure including a magnetization-fixed layer, a magnetization-free layer and a nonmagnetic intermediate layer or a tunnel barrier layer sandwiched between the magnetization-fixed layer and the magnetization-free layer. The method includes a step of feeding through the MR read head element a sense current, a step of measuring non-signal output versus frequency characteristics of the MR read head element over a frequency range that covers at least FMR of the magnetization-fixed layer, and a step of discriminating whether the thin-film magnetic head is a head providing high-temperature noises by comparing a frequency of a peak of the non-signal output resulting from FMR of the magnetization-fixed layer with a threshold.

Abstract: Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2?x?yMn1+xAl1+y, Co2?x?yMn1+xSi1+y, Co2?x?yMn1+xGe1+y, and Co2?x?yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.

Abstract: Provided is a smear-removing method that can remove smear of a manufactured thin-film magnetic head. The method is performed to a thin-film magnetic head including an MR effect element for reading data having two electrode layers sandwiching an MR effect multilayer as a magneto-sensitive portion therebetween. The method comprises the step of applying a stress voltage less than a breaking voltage of the MR effect element between the two electrode layers to burn off smear. In the method, it is preferable that the stress voltage is applied while an electric resistance or an output voltage of the MR effect element is measured, and the stress voltage is increased until the value of the electric resistance or the output voltage reaches an upper limit specified value specified from a value of an electric resistance or an output voltage in a normal case where smear is not present.

Abstract: A magnetic head in which the size of MR height is controlled precisely, a head gimbal assembly and a hard disk drive which are mounted with such a magnetic head, and a method of making a magnetic head in which the size of MR height is controlled precisely. The magnetic head in accordance with the present invention is a magnetic head comprising a slider substrate and a magnetic head part provided on the slider substrate; wherein the magnetic head part comprises, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.

Abstract: A thin film magnetic head is provided, in which thermal protrusion can be suppressed. The thin film magnetic head includes a main magnetic pole layer which conducts a magnetic flux into the recording medium so that the recording medium is magnetized in a direction perpendicular to a surface of the recording medium, a first return yoke layer provided in a trailing side of the main magnetic pole layer, and has a recess in a top surface, a second return yoke layer provided so as to fill at least the recess of the first return yoke layer, and a thermal expansion suppression layer provided in a trailing side of the second return yoke layer. Thus, since the thermal expansion suppression layer can be provided on a surface having no recess, a possibility of a crack in the thermal expansion suppression layer can be eliminated.

Abstract: A slider comprising a platinum layer including a first end and a second end, where slider temperature may be estimated based upon the platinum layer resistance. A head gimbal assembly including the slider. A head stack assembly including the head gimbal assembly. A preamplifier including an analog to digital converter for measuring the platinum layer resistance. An embedded circuit for electrically coupling to the head stack assembly to use the platinum layer to successively estimate slider temperature and estimate head disk impact events and maintain a head disk impact count. A hard disk drive including the slider and measuring the resistance of the platinum layer to estimate slider temperature and/or head disk impact events and increment and maintain a head disk impact count.

Abstract: Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product ?S×? of a saturation magnetostriction constant ?S of the pinned layer and an internal stress ? on a cross-section perpendicular to a layer surface of the hard bias layer being negative.

Abstract: A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe1-x-yCoxNiy (0?x+y?1, 0?x?1, 0?y?1), and contains at least one additive element of V, Cr, and Mn in a range of 0<a?20 at % (a is a content). An intermediate layer is disposed between the magnetization fixed layer and the magnetization variable layer and consists of a nonmagnetic material. The magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.

Abstract: A magnetic write head for data recording having a magnetic write pole with a stepped magnetic shell structure that defines a secondary flare point. The secondary flare point defined by the magnetic shell portion can be more tightly controlled with respect to its distance from the air bearing surface (ABS) of the write head than can a traditional flare point that is photolithographically on the main pole structure. This allows the effective flare point of the write head to be moved much closer to the ABS than would otherwise be possible using currently available tooling and photolithography techniques. The write head may also include a magnetic trailing shield that wraps around the main pole portion.

Abstract: A method of manufacturing a magnetic head includes the steps of: fabricating a substructure in which pre-head portions are aligned in a plurality of rows by forming components of a plurality of magnetic heads on a single substrate; and fabricating the plurality of magnetic heads by separating the pre-head portions from one another through cutting the substructure. In the step of fabricating the substructure, the resistance of an MR film that will be formed into an MR element by undergoing lapping later is detected to determine the target position of the boundary between a track width defining portion and a wide portion of a pole layer based on the resistance thus obtained, and the pole layer is thereby formed. In the step of fabricating the magnetic heads, the surface formed by cutting the substructure is lapped such that the MR film is lapped and the resistance thereof thereby reaches a predetermined value.

Abstract: A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.

Abstract: A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage layer. The antiferromagnetic layer couples magnetically in a controlled manner to the magnetic storage layer such that the magnetic storage layer has uniform and/or directional magnetization. Additionally or alternatively, an antiferromagnetic layer may be formed in proximity to the magnetic sense layer. The antiferromagnetic layer in proximity to the magnetic sense layer couples magnetically in a controlled manner to the magnetic sense layer such that the magnetic sense layer has uniform and/or directional magnetization.

Abstract: A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %.

Abstract: A perpendicular magnetic recording head includes a main magnetic pole layer; and a return yoke layer laminated on the main magnetic pole layer with a magnetic gap layer formed of a nonmagnetic material disposed on an opposing surface opposite a recording medium. The return yoke layer includes a first throat part opposing the main magnetic pole layer at a side close to the recording medium-opposing surface with a first gap spacing corresponding to a film thickness of the magnetic gap layer; and a second throat part extending to a deeper side than the first throat part in a height direction and opposing the main magnetic pole layer with a second gap spacing greater than the first gap spacing. A throat height determining layer is provided on the main magnetic pole layer or the magnetic gap layer, the throat height determining layer defining a dimension of the first throat part of the return yoke layer in the height direction and formed of an inorganic nonmagnetic material.

Abstract: A perpendicular magnetic recording medium comprises a soft-magnetic backing layer formed on a substrate, an orientation control layer formed on the soft-magnetic backing layer, a first foundation layer of a continuous film of Ru or a Ru alloy formed on the orientation control layer, a second foundation layer including a plurality of crystal grains of Ru or a Ru alloy formed on the first foundation layer with a gap separating the plurality of crystal grains from each other, and a recording layer including a plurality of magnetic particles formed on the second foundation layer respectively in correspondence to the plurality of crystal grains, each of the magnetic particles having an easy axis of magnetization in a direction generally perpendicular to a substrate surface, and a non-magnetic grain boundary phase isolating said plurality of magnetic particles from each other, wherein the first foundation layer comprises a plurality of crystal grains formed in contact with each other at respective grain boundaries,

Abstract: A magnetic head (slider) which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features. The read and write components are formed from thin films disposed parallel to the air bearing surface and can be side-by-side or tandem in relation to the recording track. The stripe height of the read sensor is controlled by the deposition process rather than by lapping. Various embodiments of the read head include contiguous junction biasing, external hard magnet biasing, and in-stack biasing. In one embodiment a permeable field collector is included below the sensor layer structure. An aperture shield surrounding the sensor at the ABS is included in one embodiment.

Abstract: A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other.

Abstract: An apparatus, system, and method are disclosed for detecting the formation of a short between a magnetoresistive (“MR”) head and a head substrate. The apparatus is presented with a logic unit containing a plurality of modules configured to functionally execute the necessary steps of generating a baseline electric potential level between a head substrate and ground, monitoring the level of the electric potential between the head substrate and ground, and detecting the formation of a short circuit between the MR head and the head substrate by detecting a change in the electric potential level monitored by the monitoring module from the baseline level to a predetermined threshold level. Beneficially, such an apparatus, system, and method would reduce read errors on the magnetic tape storage system, the time and resources required to recover from such errors, and allow for preventative measures to obviate contamination short related failures of tape drive systems.

Abstract: The tunnel magnetoresistance effect film is a highly practical tunnel magnetoresistance effect film having a characteristic of serviceable negative MR ratio, which can be used at room temperature. The tunnel magnetoresistance effect film comprises: a tunnel barrier layer; and magnetic layers sandwiching the tunnel barrier layer. One of the magnetic layers is composed of FeN.

Abstract: A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

Abstract: Provided are a perpendicular magnetic write head capable of achieving the high performance and stability in the writing performance, and a method of manufacturing the same. On a trailing side of a main magnetic pole layer, disposed are a gap layer extending backward from an air bearing surface and an auxiliary magnetic pole layer extending backward from a position recessed from the air bearing surface. The auxiliary magnetic pole layer is partially overlapped on the gap layer. In case the auxiliary magnetic pole layer is formed using etching method in the process of manufacturing the perpendicular magnetic write head, the gap layer has a function as an etching stopper layer so that the main magnetic pole layer is protected; thereby the already-formed main magnetic pole layer is not subjected to etching.

Abstract: According to an aspect of an embodiment, a magnetic head comprises a magnetic pole; a first return yoke located under a lower side of the magnetic pole; a second return yoke located over an upper side of the magnetic pole; and a side yokes made of a soft magnetic material, located adjacently to the end of the magnetic pole and connecting the first return yoke and the second return yoke.

Abstract: Provided is a thin-film magnetic head capable of writing data with high accuracy on a magnetic recording medium having high coercive force without heating. The head comprises an electromagnetic coil element comprising: a main magnetic pole; an auxiliary magnetic pole; and a write coil formed so as to pass through at least between the main magnetic pole and the auxiliary magnetic pole, for generating the write magnetic field. In this head, a part of the write coil has a layered structure of: a resonance coil layer for generating a resonance magnetic field having ferromagnetic resonance frequency of a magnetic recording layer of a magnetic recording medium or having a frequency in the vicinity thereof; and a write coil layer. And further, the resonance coil layer and the write coil layer sandwich an insulating layer therebetween.

Abstract: There is provided a storage apparatus and the like capable of ensuring long-term reliability. A storage apparatus according to the present invention comprises: a read section that receives a predetermined electrical parameter to read out data from a recording medium; a characteristic detection section that detects a plurality of characteristic values which are predetermined indicators of the read section corresponding to the plurality of different predetermined electrical parameters that have been given to the read section; a characteristic relation acquisition section that acquires as a characteristic relation a relationship between the predetermined electrical parameter and characteristic value from the predetermined electrical parameter and plurality of characteristic values acquired by the character detection section; and a determination section that determines presence/absence of failure in the read section based on the characteristic relation acquired by the characteristic relation acquisition section.

Abstract: A thermally assisted magnetic head has a medium-facing surface facing a medium, and comprises: a waveguide an end face of which is exposed in the medium-facing surface; an electroconductive near-field light generator plate disposed on a medium-facing surface of the waveguide so that a principal face thereof faces the medium; and an electroconductive near-field light scatter plate disposed on the medium-facing surface of the thermally assisted magnetic head so that a principal face thereof faces the medium; when viewed from a direction perpendicular to the medium-facing surface, the near-field light generator plate has a cusp portion at an end; when viewed from the direction perpendicular to the medium-facing surface, the near-field light scatter plate is arranged along the other end opposite to the cusp portion of the near-field light generator plate; when viewed from the direction perpendicular to the medium-facing surface, a width of the near-field light scatter plate in a first direction perpendicular to a

Abstract: In a perpendicular recording head, a notch is formed in the top write gap at a location on top of the main pole. A perpendicular head with this notched top write gap structure has less transition curvature and better writability while reducing the adjacent track interference (ATI). Also, the process used to fabricate the head ensures that the trailing edge (writing edge) of the main pole is extremely flat with no corner rounding.

Abstract: A thin-film magnetic head includes a lower electrode layer, an MR multi-layered structure, through which a current passes in a direction perpendicular to a lamination plane, stacked on the lower electrode layer, soft magnetic layers for magnetic domain control formed on both sides in a track width direction of the MR multi-layered structure, an anti-ferromagnetic layer for magnetic domain control continuously stacked on the MR multi-layered structure and the soft magnetic layers for magnetic domain control, the anti-ferromagnetic layer mutually exchanged-coupled to the soft magnetic layers for magnetic domain control, and an upper electrode layer stacked on the anti-ferromagnetic layer for magnetic domain control.

Abstract: A magnetic storage device with a significant reduction in power consumption. The magnetic storage device includes: a yoke which is arranged to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged in contact with the yoke, thereby forming a closed magnetic circuit. The magneto-resistive element is capable of writing information with a field emanating from the yoke. The magnetic storage device satisfies Iw?a·R, where R is the magnetoresistance of the yoke, Iw is the write current necessary for the line, and a (mA·H)=6E?11.

Abstract: The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

Abstract: A magneto-resistive head, a magnetic tape and a magnetic tape recording/reproducing system, which are capable of suppressing the formation of protrusions around a magneto-resistive element, thereby preventing the occurrence of such problems as spacing loss and tape damage, are provided. A thermally conductive member that is connected to the magneto-resistive element is formed of a material having a thermal conductivity greater than 20 W/m·K so as to efficiently release the heat generated when the magneto-resistive element is in use and suppress the rise in temperature around the magneto-resistive element. In addition, by selecting, for a lubricant layer formed on the surface of the magnetic tape, a material whose melting point is higher than the operating temperature of the magneto-resistive element, the lubricant layer is prevented from melting even when the magneto-resistive element is in use and when the temperature of the magnetic head thus rises.

Abstract: A bending waveguide is provided including a core having an input end and an output end, wherein the output end has a near field enhanced aperture structure, and a metal cladding enclosing the core. The core is bent in a curve and a radius of curvature of the curve is a resonance radius at which an intensity of transmitted light with respect to a wavelength of incident light is a maximum. Thus, the direction of the incident light can be changed by a predetermined angle while maintaining the field enhancement characteristic of the conventional near field enhanced aperture without an additional optical element.

Abstract: A method for fabricating a read head for a magnetic disk drive having a read head sensor and a hard bias layer, where the read head has a shaped junction between the read head sensor and the hard bias layer. The method includes providing a layered wafer stack to be shaped. A single- or multi-layered photoresist mask having no undercut is deposited upon the layered wafer stack to be shaped. The layered wafer stack is shaped by the output of a milling source, where the shaping includes partial milling to within a partial milling range to form a shaped junction. A hard bias layer is then deposited which is in contact with the shaped junction of the wafer stack.

Abstract: A magnetoresistive element includes a free layer which contains a magnetic material and has an fct crystal structure with a (001) plane oriented, the free layer having a magnetization which is perpendicular to a film plane and has a direction to be changeable by spin-polarized electrons, a first nonmagnetic layer and a second nonmagnetic layer which sandwich the free layer and have one of a tetragonal crystal structure and a cubic crystal structure, and a fixed layer which is provided on only one side of the free layer and on a surface of the first nonmagnetic layer opposite to a surface with the free layer and contains a magnetic material, the fixed layer having a magnetization which is perpendicular to a film plane and has a fixed direction.

Abstract: A head slider includes upper and lower shielding layers embedded in an insulating non-magnetic film overlaid on the outflow end surface of a slider body. A magnetoresistive film is embedded between the lower and upper shielding layers. A heating wiring pattern is located at the back of the lower shielding layer. The heating wiring pattern gets heated in response to the supply of electric current. This results in expansion of the lower shielding layer in front of the heating wiring pattern. The lower shielding layer is forced to protrude toward the recording medium. The lower shielding layer gets closer to the recording medium at a position upstream of the magnetoresistive film. The head slider allows the lower shielding layer to contact with the recording medium at a position upstream of the magnetoresistive film.

Abstract: The magnetoresistance effect element includes: a magnetization fixing layer; a barrier layer formed on the magnetization fixing layer; and a free layer formed on the barrier layer. The method of producing the magnetoresistance effect element comprises the steps of: forming the magnetization fixing layer on a substrate; forming a metal film as the barrier layer, wherein one part of the metal film on the magnetization fixing layer side is in an amorphous state or a refined crystal state and the other part thereof on the other side is in a crystal state; natural-oxidizing the metal film in an oxidizing atmosphere; forming the free layer on the oxidized metal layer.

Abstract: The method of making a thin-film magnetic head in accordance with the present invention forms a cover layer on an insulating layer about a magnetoresistive film so as to eliminate a protrusion riding on the magnetoresistive film. The protrusion can be eliminated by etching. The part of insulating layer clad with the cover layer is not etched. This can prevent short-circuit from occurring because of thinning the insulating layer.

Abstract: A method includes a head-slider manufacturing process that manufactures a head slider composed of a sensor section and a slider main body. The sensor section has a tunnel magnetoresistive film and a pair of electrode films. The method further includes: a measurement process that measures a difference between an impedance between one of the electrode films and the slider main body and an impedance between the other electrode film and the slider main body; and a determination process that determines whether the difference in the impedances is within a predetermined value or not. The method further includes: a head-gimbal-assembly assembling process that assembles a head gimbal assembly by using the head slider for which it is determined that the difference in the impedances is within the predetermined value; and a HDD assembling process that assembles a HDD by using the head gimbal assembly.

Abstract: A method for manufacturing a magnetic head device that includes a soft magnetic layer includes the steps of forming a plating base layer in the soft magnetic layer through sputtering, and applying, during the forming step, a magnetic field in a direction parallel to an orientation fringe of a wafer in which the magnetic head device is formed.

Abstract: A thin film magnetic head includes ferromagnetic films sandwiching a magnetoresistance effect element to stabilize the magnetic domain control of a free layer and thereby prevents the side reading from a track adjacent to a target regenerative track (side track). A method for manufacturing the thin film magnetic head and a magnetic recorder including the thin film magnetic head are also provided.

Abstract: A magneto-resistance effect element includes a first magnetic layer of which a magnetization direction is fixed; a second magnetic layer of which a magnetization direction is fixed; an intermediate layer which is provided between said first magnetic layer and said second magnetic layer; and a pair of electrodes for flowing a current perpendicular to a film surface of the resultant laminated body comprised of said first magnetic layer, said second magnetic layer and said intermediate layer. The intermediate layer includes insulating portions and metallic portions containing at least one selected from the group consisting of Fe, Co, Ni, Cr and the metallic portions are contacted with the first magnetic layer and the second magnetic layer.

Abstract: An object of the present invention is to provide a magnetic head in which symmetry of a reproduction waveform output is increased and its spread is decreased without decreasing the reproduction output. The film thickness of the distal end of the hard bias layer providing a bias magnetic field to the free layer is 11 nm or more, or the distance between the distal end section of the hard bias layer and the free layer is 5 nm or more to 14 nm or less. Alternatively, the relationship between the saturation magnetization Ms_f of the free layer and saturation magnetization Ms_b of the hard bias layer satisfies the condition: Ms_f?0.8*Ms_b.

Abstract: A thermally assisted magnetic head has a slider having a medium-facing surface, and a light source unit having a light source support substrate, and a light source disposed on the light source support substrate; the slider has a slider substrate and a magnetic head portion disposed on a side surface of the slider substrate; the magnetic head portion has a magnetic recording element for generating a magnetic field, first and second waveguides, for receiving light through an end face and guiding the light to the medium-facing surface, and a near-field light generator disposed on an end face; the light source support substrate is fixed to a surface of the slider substrate so that light emitted from the light source can enter the end face of the first waveguide.

Abstract: A three terminal magnetic sensor (TTM) has a base region, a collector region which is adjacent the base region, an emitter region, and a barrier region which separates the emitter region from the base region. A sensing plane is defined along sides of the base region, the collector region, and the emitter region. An insulator layer is offset from the sensing plane and adjacent the collector region and the base region. A metal layer is offset from the sensing plane and in-plane and in contact with magnetic materials of the base region. This metal layer advantageously reduces an electrical resistance of the base region, which reduces signal noise in the TTM. Preferably, the metal layer has an electrical resistivity of less than 10 ??-centimeter (e.g. copper, gold, or ruthenium). The TTM may comprise a spin valve transistor (SVT), a magnetic tunnel transistor (MTT), or a double junction structure.

Abstract: A method for reducing noise in a lapping guide. Selected portions of a Giant magnetoresistive device wafer are masked, thereby defining masked and unmasked regions of the wafer in which the unmasked regions include lapping guides. The wafer is bombarded with ions such that a Giant magnetoresistive effect of the unmasked regions is reduced. The GMR device is lapped, using the lapping guides to measure an extent of the lapping.

Abstract: A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.