Abstract: A varactor includes a container forming a liquid chamber, a first electrode mounted adjacent the chamber, and a second electrode mounted adjacent the chamber. The chamber may be sized and configured, and a spacing between the electrodes and the chamber may be selected, so that a contact angle of a quantity of liquid metal in the chamber relative to at least one of the electrodes can be changed by applying a bias voltage.

Abstract: A variable capacitance capacitor has a plurality of variable capacitance elements, using a thin-film dielectric layer whose dielectric constant varies with voltage application, connected in series with one another between the high-frequency signal input and output terminals. The first bias lines belonging to a high-potential side and the second bias lines belonging to a low-potential side, in terms of voltage application, are connected, alternately, to electrodes of the variable capacitance elements connected one another and electrodes in the array of the series-connected variable capacitance elements connected respectively to the input terminal and the output terminal.

Abstract: Capacitors (10,20,40,50,70,80) having a fluid dielectric material that is transported or undergoes a phase change are disclosed. The dielectric medium change results in a change in the total dielectric constant of the material between the electrodes (12, 14, 72, 74, 81, 82), thus changing the capacitance of the capacitors. Transporting or phase changing the dielectric fluids into and out of a the electric field of the capacitor, changes the effective dielectric constant and the capacitance of the capacitor.

Abstract: A device for varying the capacitance of an electronic circuit is disclosed. The device comprises a flexible membrane located above the electronic circuit, a metal layer connected to the flexible membrane, and bias circuitry located above the membrane. Variation of the capacitance of the electronic circuit is obtained by pulling the membrane upwards by means of the bias circuitry. The disclosed device provides a sizeable capacitance variation and high Q factor, resulting in overall low filter insertion loss. A nearly constant group delay over a wide operating bandwidth is also obtained.

Abstract: A MEMS tunable capacitor with angular vertical comb-drive (AVC) actuators is described where high capacitances and a wide continuous tuning range is achieved in a compact space. The comb fingers rotate through a small vertical angle which allows a wider tuning range than in conventional lateral comb drive devices. Fabrication of the device is straightforward, and involves a single deep reactive ion etching step followed by release and out-of-plane assembly of the angular combs.

Abstract: A variable capacitor having a groove portion formed in an insulating substrate, two upper portions of the substrate located on either side of the groove portion forming two lateral edges, a conductive layer covering the inside of the groove portion, a flexible conductive membrane, placed above the groove portion by bearing on the edges, a dielectric layer covering the conductive layer or the membrane to insulate the conductive layer and the membrane, and terminals of application of a voltage between the conductive layer and the membrane, and such that the depth of the groove portion continuously increases from one of the edges to the bottom of the groove portion, and that the conductive layer covers the inside of the groove portion at least to reach one of the two edges, that it may cover.

Abstract: A dielectric capacitor having self healing properties is disclosed. The capacitor includes a film made of an amorphous aromatic copolycarbonate having a weight average molecular weight of at least 10,000 and a glass transition temperature of at least 160° C. In a preferred embodiment the copolycarbonate includes structural units derived from bisphenol TMC. Also disclosed is a process for making the film.

Abstract: A semiconductor junction varactor is designed with gate enhancement for enabling the varactor to achieve a high ratio of maximum capacitance to minimum capacitance. The varactor has a gate region (131 or 181) divided into multiple portions of differing zero-point threshold voltages for enabling the varactor capacitance to vary relatively gradually with a control voltage applied to the varactor.

Abstract: A variable capacitance element includes a movable element provided above a substrate using supporting portions and support beams so as to be displaced from the substrate. An insulating film and a movable electrode are provided on a conductor facing surface of the movable element. A driving electrode is arranged to displace the movable element, between a signal cutoff position and a signal passage position, whereby a high frequency signal transmitted through a transmission line is cut off or allowed to pass. The insulating film uses compressive stress to warp the movable element and the movable electrode in a direction of warping in a convex form toward the transmission line, and maintains this warping direction.

Abstract: A capacitive transducer of multi-layer construction includes two rotor plates supported by flexible springs, the plates being spaced apart and rigidly connected by a stem. One rotor plate my be used as either a pickup electrode or a grounded target electrode for determining position, displacement, or load force. The second rotor plate may be used for electrostatic actuation without interfering with or destroying circuitry associated with the first rotor plate. A number of improvements are disclosed including a hollow rotor plate structure for reduced moving mass, buckling resistant features for the springs, improved spring anchor joint design for reduced creep and hysteresis, and material selection and matching for reduced thermal sensitivity.

Abstract: A vacuum variable capacitor is includes of a vacuum container which is formed by sealing both end of a cylindrical insulator with a fixed-side end plate and a movable-side end plate, a movable conductive member which is disposed opposite to the fixed-side end plate in the vacuum container, a fixed electrode which is provided on the fixed-side end plate, a movable electrode which is provided on the movable conductive member, a bellows provided in the vacuum container, a rotating portion which is rotatably disposed outside of the vacuum container, and a ball screw through which the movable conductive member is supported by the rotating member.

Abstract: A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.

Abstract: Tunable capacitors (10, 20, 30, 40) have a dielectric material (16, 26, 36, 42) between electrodes, which dielectric material comprises an insulating material (17, 27, 37, 42) and electrically conductive material, (18, 28, 38, 48) e.g., conductive nanoparticulates, dispersed therein. In certain cases, enhanced tune-ability is achieved when the dielectric material comprises elongated nanoparticulates (38). Further enhanced tune-ability may be achieved by aligning elongated particulates in an electrode-to-electrode direction. Nanoparticulates may be produced by heating passivated nanoparticulates. Passivated nanoparticulates may be covalently bound within a polymeric matrix. High bias potential device structures can be formed with preferential mobilities.

Abstract: Electrically tunable electromagnetic bandgap (“TEBG”) structures using a ferroelectric thin film on a semiconductor substrate, tunable devices that include such a TEBG structure, such as a monolithic microwave integrated circuit (“MMIC”), and a method producing such a TEBG structure are disclosed. The present invention provides a semiconductive substrate having an oxide layer, a first conductive layer positioned on the oxide layer, a ferroelectric layer covering the first conductive layer, and a second conductive layer positioned on a surface of the tunable ferroelectric layer. The use of the ferroelectric layer, which have a DC electric field dependent permittivity, enables a small size, tunable EBG structure.

Abstract: A variable capacitor. The variable capacitor has a movable capacitor electrode including a major surface and a fixed capacitor electrode including a major surface. The major surface of the fixed capacitor electrode is opposite the major surface of the movable capacitor electrode and is separated therefrom by a gap. The major surface of the movable capacitor electrode includes a rigidity-increasing feature. The rigidity-increasing feature further provides a capacitance-increasing topography and reduces snap-together of the capacitor electrodes.

Abstract: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

Abstract: The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.

Abstract: A vacuum variable capacitor includes an energization bellows arranged in a vacuum vessel and having ends mounted to a movable-electrode support plate and a movable side-end plate, respectively, a heat shielding bellows arranged inside the energization bellows and outside a slide-guide support and having ends mounted to the movable-electrode support plate and the movable side-end plate, respectively, and a cooling pipe interposed between the two bellows and for preventing transfer of heat generated in the energization bellows.

Abstract: A variable capacitor includes a stator and a rotor rotatably supported by a cover relative to the stator. The stator includes a first stator electrode of two or more layers and a second stator electrode of two or more layers in the interior of a dielectric substrate. The first stator electrode is connected to a first external electrode and the second stator electrode is connected to a second external electrode. The rotor includes a rotor electrode of two pieces opposing the stator electrodes, and capacitances are defined in the areas of overlap of the rotor electrode and stator electrodes. The capacitances are adjustable to extremely small levels.

Abstract: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

Abstract: A detector assembly including a support element, a first capacitor plate and a second capacitor plate. The support element is configured to attach the detector assembly to a chamber wall that separates a lower pressure region and a higher pressure region. A surface of the second capacitor plate is spaced apart from a surface of the first capacitor plate to define a capacitor gap. The first capacitor plate is positioned to be inside the lower pressure region when the detector assembly is attached to the chamber wall. The second capacitor plate is supported by the support element through insulating couplings. The detector assembly also includes a means for reducing mechanical load on the insulating couplings between the second capacitor plate and the support element. The reduced mechanical load includes load caused by a pressure difference between the lower and higher pressure regions.

Abstract: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

Abstract: Various embodiments of tunable capacitors are disclosed. One embodiment is in the form of a tunable capacitor (368) having a pair of stationary capacitor electrodes (392) that are fixed to and disposed the same distance above a substrate (388) in the vertical dimension. A tuning element (416) is suspended above the substrate (388) by an elevation system (460) that accommodates movement of the tuning element (416) in the vertical dimension. Changing the capacitance of the tunable capacitor (368) is accomplished by moving the tuning element (416) in the vertical dimension.

Abstract: A variable capacitor is provided such that it is possible to make nonlinear distortion small and use at high power handling capability, and such that a variable rate of capacitance is not influenced by a high-frequency voltage substantially. A variable capacitor is used by changing capacitance through application across electrodes of direct current voltage and high-frequency voltage. When an effective voltage value of high-frequency voltage is within a range of voltage values of direct current voltage, there is substantially no fluctuation caused by application of high-frequency voltage with respect to a change of capacitance caused by application of direct current. Since it is possible to decrease susceptibility to the high-frequency voltage of the variable capacitor, it is possible to obtain a variable capacitor such that nonlinear distortion is small and power handling capability is high.

Abstract: A crosspoint switch including a switch matrix modules and programming features. A switch matrix modules include input lines tied to inputs of the switch through precompensation networks. The programming features include user initialization states and reduced and grouping command configuration operations.

Abstract: In a differential capacitor1, first and second capacitors 1003 and 1004 are formed in substantially symmetrical positions from each other with respect to a vertical plane B-B?, on a semiconductor substrate 1020. The differential capacitor 1 further includes a shield plate 1022 interposed between the semiconductor substrate 1020 and the lower electrodes 1016 and 1018. When each of the lower electrodes 1016 and 1018 is projected onto the shield plate 1022 along the vertical direction, each projected lower electrode 1016 or 1018 has a partial overlap with the shield plate 1022.

Abstract: A tunable element in the microwave frequency range is described that may include one or more tunable elements that are directly digitally controlled by a digital bus connecting a digital control circuit to each controlled element. In particular, each digital signal is filtered by a digital isolation technique so that the signal reaches the tunable elements with very low noise. The low noise digital signals are then converted to analog control voltages. The direct D/A conversion is accomplished by a special D/A converter which is manufactured as an integral part of a substrate. This D/A converter in accordance with the invention may consist of a resistor ladder or a directly digitally controlled capacitor. The direct digitally controlled capacitor may be a cantilevered type capacitor having multiple separate electrodes or sub-plates representing binary bits that may be used to control the capacitor.

Abstract: A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: The invention relates to a variable capacitor which, due to its particular arrangement of electrodes, enables a significantly higher current flow than generally known constructions having the same or a similar structural shape, said capacitor also has an increased life expectancy and is compatible with existing capacitors in terms of connection. Such variable capacitors can be used in high frequency generators, in matchboxes and in interface networks for industrial high frequency applications, as regulatable filters in high frequency power electronics and in the power part of emission installations.

Abstract: An integrated, tunable capacitance is specified in which the quality factor is improved by virtue of the fact that, instead of source/drain regions, provision is made of highly doped well terminal regions having a deep depth, for example formed as collector deep implantation regions. This reduces the series resistance of the tunable capacitance. The integrated, tunable capacitance can be used for example in integrated voltage-controlled oscillator circuits in which a high quality factor is demanded.

Abstract: A three-dimensional micro electro-mechanical (MEMS) variable capacitor is described wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate are independently actuated. These electrodes are formed in an interdigitated fashion to maximize the capacitance of the device. The electrodes are jointly or individually actuated. A separate actuation electrode and a ground plane electrode actuate the movable electrodes. The voltage potential between the two electrodes provides a primary mode of operation of the device. The variation of the sidewall overlap area between the interdigitated fingers provides the expected capacitance tuning of the device. The interdigitated electrodes can also be attached on both ends to form fixed-fixed beams. The stiffness of the electrodes is reduced by utilizing thin support structures at the ends of the electrodes. The three dimensional aspect of the device avails large surface area.

Abstract: Variable capacitive device, such as a capacitor, controllable in voltage Vc including at least one first armature (L) and one second armature (R), the armatures being separated by an insulation layer (D) including several conducting aggregates separated from each other. The use of the capacitor according to the invention in a resonant circuit.

Abstract: A variable capacitor element including: a buried electrode layer of a conductivity type different from a semiconductor substrate; a wiring layer connected to the lead portion of the buried electrode layer; a pair of capacitive insulating films that are formed as regions having mutually opposing adjacent sides in a plane shape on a portion of the buried electrode layer excluding the lead portion; an insulator layer formed on the border region of each outside of the pair of capacitive insulating films in a direction perpendicular to the adjacent sides; a pair of conductor layers formed both on the respective capacitive insulating films and on the respective insulator layers; and wiring layers that are connected respectively to lead portions of the pair of conductor layers above the insulator layer. The capacitance value between the buried electrode layer and each of the conductor layers can be changed by changing the voltage between the buried electrode layer and the conductor layers.

Abstract: Micro-Electro-Mechanical System (MEMS) Variable Capacitor Apparatus and Related Methods. According to one embodiment, a MEMS variable capacitor is provided. The variable capacitor can include first and second electrodes being spaced apart, and at least one of the electrodes being movable when a voltage is applied across the first and second electrodes. The variable capacitor can also include a first conductive plate attached to and electrically isolated from the first electrode. Furthermore, the variable capacitor can include a second conductive plate attached to the second electrode and spaced from the first conductive plate for movement of at least one of the plates with respect to the other plate upon application of voltage across the first and second electrodes to change the capacitance between the first and second plates.

Abstract: An ultra miniature high temperature capacitive inductive pressure transducer is fabricated by MEMS techniques. The transducer consists of two separated pieces of silicon which form the plates of the capacitor, one of which plate is micromachined in such a way to allow a controlled deflection with pressure. The gap between the two capacitive plates is determined by an extending rim on one of the two plates. The two pieces of silicon are subsequently fusion bonded, leading a very small gap between the two plates. An inductor is formed on the top surface of one of the pieces of silicon by sputtering metal in a spiral like fashion on the back side of the non-micromachined plate.

Abstract: The present invention is directed to a capacitor apparatus of the capacity variable type. This capacitor apparatus is manufactured by Micro Electro-Mechanical System technology, and comprises an insulating substrate (2) in which at least two capacitor electrodes (3), (4) are formed on one surface (2a) in the state where they are insulated each other, an actuator (5) formed by insulating material and having an external shape to bridge over the respective capacitor electrodes (3), (4), the actuator (5) being such that a conductor which respectively constitutes capacitors between the conductor (6) and these capacitor electrodes (3), (4), and drive means (7) for allowing this actuator (5) to undergo an operation to come into contact with one principal surface (2a) of the insulating substrate (2) or to become away therefrom.

Abstract: First and second varactors are disposed on a surface of a P-type substrate. The first varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and an N-type polysilicon layer disposed on the gate insulator. The second varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and a P-type polysilicon layer disposed on the gate insulator. The N-type polysilicon layer and P-type polysilicon layer are connected to a gate terminal. The N wells are connected to an SD terminal via P+ diffusion layers. The N-type polysilicon layer and P-type polysilicon layer have different work functions.

Abstract: A variable passive component is provided for fabrication on a microelectromechanical system (MEMS) device. A conductive portion is provided on a low-profile sliding dielectric sheet that cooperates with a conductive portion disposed on a substrate to provide a variable passive component. The passive component can be a variable inductor provided by moving a shorted spiral inductor formed on the dielectric sheet over a spiral inductor on the substrate with varying degrees of overlap causing varying inductance values. The passive component can be a variable capacitor that consists of a large conductive pad on a dielectric plate which slides over two adjacent pads on the substrate with varying overlap causing varying capacitance values.

Abstract: A tunable capacitor. The tunable capacitor has a first fixed capacitor electrode and a second fixed capacitor electrode opposite to one another. The tunable capacitor also has a movable element formed of a conductive material. The movable element is moveable between the first fixed capacitor electrode and the second fixed capacitor electrode to adjust the capacitance between the first fixed capacitor electrode and the second fixed capacitor electrode.

Abstract: A charge control circuit for controlling a micro-electromechanical device having a variable capacitance is disclosed. In one embodiment, a charge storage device is configured to store a charge amount. A switch circuit is configured to control the variable capacitance of the micro-electromechanical device by sharing the charge amount between the charge storage device and the micro-electromechanical device to equalize the charge storage device and the micro-electromechanical device to a same voltage.

Abstract: The invention relates to a MEMS micro-capacitor of variable capacity comprising:

Abstract: A variable capacitor includes a stator and a rotor rotatably supported by a cover relative to the stator. The stator includes a first stator electrode of two or more layers and a second stator electrode of two or more layers in the interior of a dielectric substrate. The first stator electrode is connected to a first external electrode and the second stator electrode is connected to a second external electrode. The rotor includes a rotor electrode of two pieces opposing the stator electrodes, and capacitances are defined in the areas of overlap of the rotor electrode and stator electrodes. The capacitances are adjustable to extremely small levels.

Abstract: A tunable capacitor. The tunable capacitor has a first fixed capacitor electrode and a second fixed capacitor electrode opposite to one another. The tunable capacitor also has a movable element formed of a conductive material. The movable element is moveable between the first fixed capacitor electrode and the second fixed capacitor electrode to adjust the capacitance between the first fixed capacitor electrode and the second fixed capacitor electrode.

Abstract: A charge control circuit for controlling a micro-electromechanical system (MEMS) device having variable capacitor formed by first conductive plate and a second conductive plate separated by a variable gap distance. The charge control circuit comprises a switch circuit configured to receive a reference voltage having a selected voltage level and configured to respond to an enable signal having a duration at least as long as an electrical time constant constant of the MEMS device, but shorter than a mechanical time constant of the MEMS device, to apply the selected voltage level across the first and second plates for the duration to thereby cause a stored charge having a desired magnitude to accumulate on the variable capacitor, wherein the variable gap distance is a function of the magnitude of the stored charge.

Abstract: This invention relates to an apparatus and method of using a high frequency, high power, fluid dielectric variable capacitor for an impedance matching network. The apparatus consists of a bow-tie rotary vane, a set of two fixed vanes, and a set of rotating vanes adapted to rotate interdigitally between the fixed vanes. A dielectric fluid is circulated between the fixed vanes and the rotating vanes for cooling the device. This arrangement facilitates production of a device having a higher capacitance and a smaller size, thus making it suitable for use in a matching network.

Abstract: A variable capacitor of the invention includes a beam having flexibility and an electrode provided close to the beam in order to form a capacitor with the beam. By applying a voltage to between the beam and the electrode to thereby deflect the beam by an electrostatic force, a capacitance between the both is changed. The deflected beam and the electrode are placed into contact through an insulation layer formed on a surface of at least one thereof, to change a contact area thereof, thereby changing the capacitance. Meanwhile, the electrode is divided in plurality. A recess is formed such that one electrode is lower than a height of another electrode surface. By applying a voltage to the beam and the electrode corresponding to the recess, the beam is pulled to an inside of the recess, thereby enabling to eliminate stiction.

Abstract: A variable passive component is provided for fabrication on a microelectromechanical system (MEMS) device. A conductive portion is provided on a low-profile sliding dielectric sheet that cooperates with a conductive portion disposed on a substrate to provide a variable passive component. The passive component can be a variable inductor provided by moving a shorted spiral inductor formed on the dielectric sheet over a spiral inductor on the substrate with varying degrees of overlap causing varying inductance values. The passive component can be a variable capacitor that consists of a large conductive pad on a dielectric plate which slides over two adjacent pads on the substrate with varying overlap causing varying capacitance values.

Abstract: A P type substrate is provided on a surface thereof with varactor elements. The varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film is formed on the N well, with a polysilicon layer formed further thereon. On the other hand, the varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film, greater than the gate insulating film in thickness, is formed on the N well. The polysilicon layer is then formed on the gate insulating film. Furthermore, the polysilicon layer is connected to a gate terminal, while the N well is connected to an S/D terminal via N+ diffusion layers.

Abstract: An anti-entrapment system for preventing an object from being entrapped by a translating device includes a capacitance sensor positioned adjacent to the translating device. The sensor has first and second flexible conductors separated by a separation distance. The conductors have a capacitance dependent on the separation distance. The sensor has a compressible dielectric element interposed between the conductors. The capacitance of the conductors changes in response to the separation distance changing as a result of the dielectric element compressing in response to a first object touching the sensor. The capacitance of the conductors changes in response to a second conductive object coming into proximity with at least one conductors. A controller controls the translating device as a function of the capacitance of the conductors to prevent the translating device from entrapping either of the first object or the second conductive object.