Abstract: A polymer film capacitor is provided, utilizing a metallized film formed by a first vacuum-formed plasma treated surface, a vacuum-deposited, first radiation polymerized acrylate monomer film having first and second surfaces, the first surface being disposed on the first plasma-treated surface of the polymer substrate, and a metal layer disposed on the second surface of the first polymerized film. The metallized film is wound into a capacitor.

Abstract: An object of the present invention is to provide a niobium sintered body free of reduction in the CV value, a niobium powder for use in the manufacture of the niobium sintered body, and a capacitor using the niobium sintered body. A niobium powder of the present invention has niobium and tantalum, where the tantalum is present in an amount at most of about 700 ppm by mass. A sintered body and a capacitor each is manufactured using the niobium powder.

Abstract: Electrode layers (1, 2) are arranged on both sides of a dielectric layer (3) facing each other so as to configure a capacitor. Lead electrodes (4, 5) are formed in the electrode layers (1, 2). A penetrating electrode (6) that is insulated from the electrode layers (1, 2) is formed. An electronic component (10) configured in this manner is mounted on a wiring board, and a semiconductor chip can be mounted thereon. Along with connecting the semiconductor chip to the wiring board via the penetrating electrode (6), the semiconductor chip or the wiring board is connected to the lead electrodes (4, 5). In this manner, while suppressing the size increase of a mounted area, the capacitor or the like can be arranged near the semiconductor chip. Thus, the semiconductor chip is driven with high frequency more easily.

Abstract: The present invention provides a thin film capacitor which comprises: a carrier substrate; a thin film element provided on the carrier substrate and having an insulating layer and a plurality of electrode layers, the thin film element including areas formed with no insulating layer; and a plurality of external terminals electrically connected to the corresponding electrode layers for receiving electrical signals of different potentials applied thereto, the plurality of external terminals being respectively provided in the areas formed with no insulating layer and bonded to the carrier substrate via the electrode layers connected thereto. The thin film capacitor according to the invention features a sufficient insulating property and a higher break down voltage.

Abstract: The present invention discloses an over-current protection device and the apparatus thereof. The over-current protection device includes a first electrode foil, a second electrode foil and a plurality of polymer current-sensing elements, wherein the plurality of polymer current-sensing elements are formed by stacking and electrical connection in series. The first and second electrode foils are disposed on the corresponding surface of the plurality of polymer current-sensing elements, and the difference in the transition temperature between adjacent polymer current-sensing elements is at least 5° C.

Abstract: A multilayer ceramic capacitor includes a multilayer ceramic body having alternately stacked ceramic layers and internal electrodes, the ceramic layers containing therein an acceptor representing one or more metallic elements for facilitating a reoxidation process of the multilayer ceramic body, and a pair of external electrodes installed at two opposite sides of the multilayer ceramic body, wherein the acceptor concentration in the ceramic layers stacked at a central portion of the multilayer ceramic body is higher than that in the remaining ceramic layers of the multilayer ceramic body.

Abstract: A temperature-compensating thin-film capacitor includes a first dielectric thin-film having a specific inductive capacity of 4.0 or less and a linear thermal expansion coefficient of 50 ppm/° C. or more, and includes a second thin-film capacitor having capacitance-temperature coefficient with an absolute value of 50 ppm/° C. or less, in which the first and the second dielectric thin-films are placed between electrodes. The present thin-film capacitor design significantly reduces variations in capacitance due to manufacturing equipment tolerance. Also, miniaturization, thinning, and lightening of the thin-film capacitor is achieved. In another aspect of the invention, an electronic device having the temperature-compensating thin-film is provided. The temperature stability of the present thin-film capacitor is highly advantageous for incorporation into electronic devices such as a portable electronic device, microwave communication equipment.

Abstract: Ag powder particles each having a surface coated with alumina form a material. A conductor paste is prepared from the material. The conductor paste is printed on a dielectric layer by means of screen printing, for example. Accordingly, an electrode pattern of the conductor paste is formed. In this procedure, the BET specific surface area of the Ag powder particle is 0.05 to 2 m2/g. The coating amount of alumina is about 0.01 to 2% as converted into a value of oxide with respect to the Ag powder particles.

Abstract: An activated carbon for an electric double layer capacitor electrode, which comprises a stacking structure having 2 layers or less of in a proportion stacking of from 25 to 80% and a stacking structure having 5 layers or more in a proportion of from 2 to 30% in the distribution of a stacking structure as obtained by analysis of the X-ray diffraction pattern of (002) plane, and which has a specific surface area of from 500 to 2,800 m2/g and a total pore volume of from 0.5 to 1.8 cm3/g.

Abstract: The present invention is related to a method, wherein a PZT layer includes a first PZT sub-layer and a second PZT sub-layer, the Ti-concentration of the first PZT sub-layer being higher than the Ti-concentration of the second PZT sub-layer.

Abstract: An electronic component includes external electrodes formed on a base member, each external electrode including a plurality of layers of which the outermost layer is a tin plating layer. The tin plating layer has a polycrystalline structure, and atoms of a metal other than tin are diffused into the tin crystal grain boundaries. Alternatively, each external electrode includes a plurality of layers including a thick-film electrode formed on the base member, a nickel layer or a nickel alloy layer formed on the thick-film electrode and a tin plating layer formed on the nickel layer or the nickel alloy layer. The tin plating layer has a polycrystalline structure and nickel atoms are diffused into the tin crystal grain boundaries. Methods for fabricating electronic components and a circuit board provided with a plurality of electronic components are also disclosed.

Abstract: A semiconductor device of the present invention includes an electrode, which is formed over a substrate and contains ruthenium. Crystal grains of ruthenium in the electrode have stepped surfaces.

Abstract: A description is given of a film for a film capacitor which is formed from an electrically insulating carrier film with an electrically conductive layer applied thereon, the electrically conductive layer in the film capacitor forming an electrode and the carrier film forming a dielectric. The invention is distinguished by the fact that the electrically conductive layer 2 is made as thin as possible, and that, in order to reduce the total sheet resistance on the electrically conductive layer 2, at least one current path 4, 5 is provided which has a lower sheet resistance than the electrically conductive layer.

Abstract: An inductor obtained by laminating a plurality of ceramic layers having an internal coil conductor, and a thermistor obtained by laminating a plurality of ceramic layers having internal electrodes and having a predetermined resistance-temperature characteristic are laminated via an intermediate insulating layer. Both ends of the internal coil conductor of the inductor and the internal electrodes of the thermistor are connected to a pair of external electrodes. Thus, the inductor and the thermistor are connected in parallel.

Abstract: A niobium sintered body for a capacitor, which exhibits an LC value of not larger than 300 &mgr;A/g as measured after an electrolytic oxide film is formed thereon. The sintered body preferably exhibits a product (CV) [i.e., a product of capacity (C) with electrolysis voltage (V)] of at least 40,000 &mgr;F·V/g. The sintered body is produced by sintering a niobium powder containing at least one niobium compound selected from niobium nitride, niobium carbide and niobium boride. A capacitor manufactured from the sintered body has a large capacity per unit weight and good leak current characteristics. Especially, a sintered body made of a niobium powder having a large average degree of roundness has a relatively large porosity and a good packed density, and a capacitor manufactured from this sintered body has a large capacity and good withstand voltage characteristics.

Abstract: Graphitic nanofibers, which include tubular fullerenes (commonly called “buckytubes”), nanotubes and fibrils, which are functionalized by chemical substitution, are used as electrodes in electrochemical capacitors. The graphitic nanofiber based electrode increases the performance of the electrochemical capacitors.

Abstract: Metal nitride compound powder substrate for capacitor anodic oxide film and the substrate interface therebetween, characterized, relative to un-nitrided analogs, by reduced temperature bias and frequency dependencies of capacitance, the substrate-anodic oxide interface being substantially insensitive to heating compared to the un-nitrided analog.

Abstract: The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device includes at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.

Abstract: An electrical capacitor is discloses which includes a mixture of electrically conductive and non-conductive particles. The particles are intimately mixed so as to provide a random distribution, and the mixture is placed between two parallel conductive plates to which electrical leads are attached and pressure is applied.

Abstract: A nobium powder for capacitors, which contains from 0.05 to 20% by mass of niobium monoxide crystal and from 0.05 to 20% by mass of hexaniobium monoxide crystal; a sintered body thereof; and a capacitor fabricated from the sintered body as one part electrode, a dielectric material formed on the surface of the sintered body, and another part provided on the dielectric material. A capacitor manufactured from a sintered body of a niobium powder of the present invention is favored with good high-temperature characteristics.

Abstract: The present invention relates to a thin film capacitor device having a copper wiring layer, a dielectric layer, and a barrier layer interposed between the wiring layer and the dielectric layer. The barrier layer has the function of preventing diffusion of copper of the wiring layer. The thin film capacitor device may also include an insulating substrate, a planarizing layer, an adhesion layer, and an intermediate layer. The present invention may also relate to a printed circuit substrate having the described thin film capacitor device built therein as a capacitor.

Abstract: A post-in-crown capacitor is disclosed. The post-in-crown capacitor (60) includes a crown (44) coupled to a conductive via (20). A post (48) is disposed within the crown (44) and a capacitor insulation layer (50) is formed outwardly from the crown (44) and the post (48). A capacitor plate layer (52) is then formed outwardly from the capacitor insulation layer (50).

Abstract: An electronic component for a high frequency signal having a good characteristics and a fabrication method thereof at a high yield are disclosed. The electronic component according to the present invention includes a conductive pattern, which works as a certain circuit element such as an inductor, formed on an insulating substrate. The conductive pattern has a dual structure including a first conductive pattern which is formed by means of the photolithography technique and a second conductive pattern entirely covering the first conductive pattern which is formed by means of an electroless plating method.

Abstract: Embedded green multi-layer ceramic capacitors in low-temperature co-fired ceramic (LTCC) substrates are provided. A first set of electrodes is printed on a ceramic tape. A first dielectric layer is placed over the first set of electrodes and the ceramic tape. A second set of electrodes is printed on the first dielectric layer. A second dielectric layer is placed over the second set of electrodes and the first dielectric layer. A third set of electrodes is printed on the second dielectric layer. The sheet is then cut to form separate green multi-layer ceramic capacitor chips. The green multi-layer ceramic capacitor chips are then placed in a cavity formed by ceramic tape.

Abstract: A capacitor (100) with a high dielectric constant oxide dielectric (102) plus Ir- or Ir and Rh bond over the oxygen site in Barium strontium titanate (BST) dielectric to achieve the high Schottky barrier, and very thin layers of Ir or Rh with conductive oxide backing layers (106, 116) provide oxygen depletion deterrence. Rh-containing capacitor plates (104, 114) yielding high Schottky barrier interfaces.

Abstract: A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO2 or Si3N4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond, the bottom electrode to the substrate surface.

Abstract: The memory-storage node of the present invention includes a semiconductor substrate, a first insulating layer over the substrate, a conductive layer formed within the first insulating layer, and a barrier layer formed over the conductive layer. The barrier layer, preferably contains a ruthenium-based material, is conductively coupled with the conductive layer. The memory-storage node further includes a first electrode over the barrier layer, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. The method for fabricating the memory storage-node of the present invention provides a semiconductor substrate and forms a first insulating layer on the substrate. A first opening is formed in the first insulating layer and a conductive layer is provided in the first opening. A barrier layer is then formed in the first opening and over the conductive layer. The barrier layer, preferably contains a ruthenium-based material, is conductively coupled with the conductive layer.

Abstract: The present invention relates to a powdered niobium for a capacitor, characterized in that the content of each of the elements such as iron, nickel, cobalt, silicon, sodium, potassium and magnesium is about 100 ppm by weight or less or that the total content thereof is about 350 ppm by weight or less is used, a sintered body thereof, a sintered body comprising niobium monoxide crystal and/or diniobium mononitride crystal, a capacitor using the sintered body and the production method of the capacitor.

Abstract: Within both a method for forming a capacitor and a capacitor formed employing the method, there is employed for forming at least part of at least one of a first capacitor plate and a second capacitor plate a tungsten rich tungsten oxide material having a tungsten:oxygen atomic ratio of from about 5:1 to about 1:1. By forming the at least part of the at least one of the first capacitor plate and the second capacitor plate of the foregoing tungsten rich tungsten oxide material, the capacitor is formed with attenuated leakage current density.

Abstract: In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other than the electrode composed of sintered niobium nitride is composed of an ingredient selected from electrolytes, organic semiconductors and inorganic semiconductors. This capacitor has good environmental stability and good leak current characteristics.

Abstract: Capacitors having defect isolation and bypass characteristics. The capacitors include a first electrode, a second electrode containing electrode segments, and a dielectric layer interposed between the first electrode and second electrode. The electrode segments of the second electrode are physically separated from other electrode segments. The capacitors further include an interconnection bus electrically coupling the electrode segments of the second electrode. Selective isolation of one or more electrode segments permits isolation and bypass of any defects identified in those electrode segments.

Abstract: A capacitor including a ceramic body, a glass layer formed on each of opposite surfaces of the ceramic body, and a first metallic layer formed on the glass layer. Preferably, a lead terminal is connected to the first metallic layer or to a second metallic layer which is provided on the first metallic layer, by use of solder containing Pb in an amount of 2.5 wt. % or less. Preferably, a lead terminal which is plated with a substance containing Pb in an amount of 5 wt. % or less is soldered onto the first metallic layer or the second metallic layer.

Abstract: It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

Abstract: A novel arrangement of circuit components for interfacing the highspeed network such as an Ethernet comprises a first circuit card assembly which includes a microprocessor, a network encoding device, and a first device for performing a transformer function, and a second circuit card assembly which include a second transformer function device and a physical jack interface. Signals are conveyed over an interconnecting bus between the transformer devices, thereby eliminating or reducing interference.

Abstract: The present invention provides an electrode material for capacitors, capable of ensuring a large capacitance per unit weight without worsening the leakage current property, and a capacitor using the material. The present invention also provides an electrode material for capacitors, obtained by reacting a tantalum metal and/or a niobium metal or an alloy thereof having an oxide film on the surface thereof with an alkali solution to form a tantalic acid compound and/or a niobic acid compound on the surface thereof. Furthermore, the present invention provides a capacitor using the electrode material.

Abstract: A conductive paste capable of forming a terminal electrode in which sintering proceeds while the viscosity of the glass is maintained during the sintering of the conductive component, so that the softened glass is prevented from flowing into the interface between the ceramic element assembly and the terminal electrode or from flowing on the surface of the terminal electrode, and furthermore, sufficient glass remains in the cavity of the terminal electrode film, so that an excellent seal is provided against the penetration of the plating solution, and the so-called “adhesion defect” is prevented from occurring, is provided. In addition, a ceramic electronic component is provided.

Abstract: A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from about 0.1 to about 5 &mgr;m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

Abstract: A conductive structure, including an adhesion layer and a conductor in contact with the adhesion layer and having a thickness of less than six hundred Angstroms. The present invention may be used to form a capacitor, including an adhesion layer, a first conductor in contact with the adhesion layer and having a thickness of less than six hundred Angstroms, a second conductor, and a dielectric between the first and second conductors. The present invention is also directed towards structures wherein iridium or rhodium may be used in place of the combination of the adhesion layer and conductor.

Abstract: Structure and method for fabrication of an improved capacitor are disclosed. In one embodiment, the disclosed capacitor includes a metal column comprising a number of interconnect metal segments and a number of via metal segments stacked on one another. The metal column constitutes one electrode of the capacitor. Another electrode of the capacitor is a metal wall surrounding the metal column. In one embodiment, the metal wall is fabricated from a number of interconnect metal structures and a number of via metal structures stacked on one another. In one embodiment, the metal wall is shaped as a hexagon. In this embodiment, a tight packing arrangement is achieved by packing individual hexagonal capacitors “wall to wall” so as to achieve a cluster of individual hexagonal capacitors. The cluster of individual capacitors acts as a single composite capacitor. In one embodiment, the interconnect metal and via metal are both made of copper.

Abstract: The invention provides an electronic thin-film material suitable for composing a diffusion preventive layer for use in a ferroelectric capacitor, a ferroelectric capacitor using such diffusion preventive layer composed of the electronic thin-film material, and a non-volatile memory using such ferroelectric capacitor. The ferroelectric capacitor 10 is composed of a diffusion preventive layer made of a CrTa film 2, a lower electrode made of a Pt film 3, a ferroelectric film 4 made of PZT, and an upper electrode made of a Pt film 5, which are sequentially laminated on a surface of a silicon substrate. The CrTa film 2 itself is an alloy film comprising 90-atomic % of Cr and 10-atomic % of Ta, which can be formed via a sputtering process. Inasmuch as the ferroelectric capacitor 10 is composed of the CrTa film 2, it is possible to utilize PZT requiring high-temperature thermal treatment to form the ferroelectric film material.

Abstract: An electronic part includes a body and an outer electrode formed on the surface of the body, the outer electrode comprising a plurality of layers and having a Sn plating layer as the outermost layer. The Sn plating layer has an average crystal grain size of about 1 &mgr;m or less.

Abstract: A ceramic electronic component includes electrodes each having a four layer structure including a first electrode layer made of an Ni—Ti alloy and constructed so as to adhere closely to the surface of a ceramic material defining a ceramic element, a second electrode layer made of at least one selected from the group consisting of Cu, Ag, and Au, disposed on the first electrode layer, a third electrode layer made of an Ni—Ti alloy, disposed on the second electrode layer, and a fourth electrode layer made of at least one selected from the group consisting of Cu, Ag, and Au, disposed on the third electrode layer. Lead terminals are bonded to the electrodes having the four layer structures via solder members, respectively.

Abstract: A laminated ceramic capacitor is provided having superior elastic and bending characteristics and having a high mechanical strength withstanding the thermal shock generated when mounting is performed on a circuit substrate by soldering. The laminated ceramic capacitor is composed of a laminate and external electrodes, wherein the laminate is formed of a plurality of ceramic layers and a plurality of internal electrodes provided therebetween so that an end of each internal electrode is exposed at one of edge surfaces of the laminate, and the external electrodes are connected to the internal electrodes and contains a conductive component and a glass having a Young's modulus of about 9×109 Pa or less.

Abstract: A ceramic electronic part includes a terminal electrode which less causes deterioration in electric characteristics due to diffusion of Sn contained in solder. In a monolithic ceramic electronic part of the present invention, terminal electrodes are formed on the outer surface of a ceramic sintered compact as a ceramic element assembly, and first electrode layers of the terminal electrodes, which closely adhere to the surface of the ceramic sintered compact, contain a main component metal, which constitutes the terminal electrodes, and a metal having higher affinity for oxygen than Sn.

Abstract: It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

Abstract: In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other than the electrode composed of sintered niobium nitride is composed of an ingredient selected from electrolytes, organic semiconductors and inorganic semiconductors. This capacitor has good environmental stability and good leak current characteristics.

Abstract: A multi-layer ceramic electronic part is made up of: a laminated body in which a ceramic layer and internal electrodes are laminated on one another and external electrodes are provided at end portions of the laminated body. The internal electrodes oppose each other reach to either one of at least a pair of edges of the ceramic layer, thereby leading out the internal electrodes opposing each other to either one of the end surfaces of the laminated body and connecting the internal electrodes led out to the end surfaces of the laminated body to the external electrodes. Each of the external electrodes has a first conductor layer which is closely contacting with only the end surface of the laminated body and a second conductor layer which covers from the first conductor layer to a portion of a side surface adjacent to the end surface of the laminated body.

Abstract: A capacitor using a high dielectric constant film for a semiconductor memory device, and a fabrication method thereof are provided that improve a process margin and achieve a stable contact. The capacitor can be fabricated by forming an impurity layer at a surface of a semiconductor substrate, forming an interlayer insulation film on the semiconductor substrate having a contact hole filled with a conductive material coupled to the impurity layer, and sequentially forming a first oxide film, a nitride film and a second oxide film on the interlayer insulation film so that the contact hole is exposed therethrough, and the nitride film and the first oxide film are partially exposed through the second oxide film. A diffusion barrier film is formed at outer and side portions of the second oxide film, outer and side portions of the nitride film, side portions of the first oxide film, and on an exposed portion of the contact hole.

Abstract: A capacitive energy storage device for use at cryogenic temperatures is provided comprising first and second electrode layers having a layer of dielectric material there between. The electrode layers comprise an electrically conductive material having a formula selected from the group consisting of: YBa2Cu3Ox and Bi2Ca2Sr2Cu3Oy. A method of storing electrical charge in a capacitive energy storage device is also provided.

Abstract: A conductive paste capable of forming a terminal electrode in which sintering proceeds while the viscosity of the glass is maintained during the sintering of the conductive component, so that the softened glass is prevented from flowing into the interface between the ceramic element assembly and the terminal electrode or from flowing on the surface of the terminal electrode, and furthermore, sufficient glass remains in the cavity of the terminal electrode film, so that an excellent seal is provided against the penetration of the plating solution, and the so-called “adhesion defect” is prevented from occurring, is provided. In addition, a ceramic electronic component is provided.