Abstract: A method for producing a dielectric layer extending between two or more elements of an electronic component includes arranging a free-standing dielectric layer above the elements and a deformable support layer below the elements. The free-standing dielectric layer is laminated onto at least a portion of the first surface of the first element and onto at least a portion of the first surface of the second element such that a portion of the dielectric layer extends between the first surface of the first element and the first surface of the second element.

Abstract: This invention provides novel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: A metal alloy powder containing at least two alloying elements selected from the group of Ni, Cu, Cr, Sn, Mn, Co and W containing 1 to 99% by weight Ni, 1 to 99% by weight Cu, 6 to 60% by weight Cr, 6 to 15% by weight Sn, 6 to 15% by weight Mn, 6 to 15% by weight Co, and/or 6 to 15% by weight W for use in laminated ceramic capacitors with an internal electrode wherein said electrode comprises a sintered body of said alloy powder. A metal alloy powder containing at least two alloying elements selected from the group of Ni, Cu, Cr, Sn, Mn, Co and W wherein the onset of oxidation of the alloy powder occurs above about 250° C.

Abstract: A ceramic powder having a perovskite structure is manufactured by synthesizing a ceramic powder by a dry synthesis process and then heat-treating the synthesized ceramic powder in a solution. The dry synthesis method includes a solid phase synthesis method, an oxalate method, a citric acid method and a gas phase synthesis method.

Abstract: A semiconductor device having the thin film capacitor includes a first electrode formed on a substrate, a capacitor insulating film containing a laminated film, which is constructed by laminating an amorphous dielectric film and a polycrystalline dielectric film via a wave-like interface, on the first electrode, and a second electrode formed on the capacitor insulating film.

Abstract: An electroconductive paste composition characterized in that an electroconductive powder with a mean grain size of 1 ?m or less and a copolymer binder composed of tetrafluoroethylene, hexafluoropropylene, and vinylidene fluoride are dispersed in a solvent. The present invention provides an electroconductive paste. composition that can be cured at low temperatures and can be endowed with low resistivity as a result of using a conventional mixing technique without the need for particularly expensive materials or techniques.

Abstract: A process for preparing a multilayer ceramic capacitor of the present invention comprises the steps of forming a pattern sheet, laminating a plurality of the pattern sheets and firing to obtain a multilayer ceramic capacitor comprising dielectric layers and internal electrode layers that are alternately laminated. The pattern sheet comprises a dielectric material green sheet and a conductor pattern. The conductor pattern is formed on the dielectric material green sheet and contains a main component selected from Ni, Cu and their alloy, at least one selected from the elements of the groups 3B to 6B of the periodic table and at least one selected from Mn, Co and Fe. The multilayer ceramic capacitor so obtained has an internal electrode layer wherein occurrence of discontinuous portions in conductor patterns is suppressed even after firing.

Abstract: A method of providing a resistance to oxidation of Nickel at high temperatures by combining Ni powder with five percent Pt resinate, and heating the same to a temperature of 500° C. to 1300° C. Electro-conductive components serving as electrodes and the like comprise a Ni/Pt powder subjected to temperatures of between 500° C. and the respective melting points of Ni and Pt.

Abstract: The invention concerns multilayered constructions useful for forming resistors and capacitors, for the manufacture of printed circuit boards or other microelectronic devices. The multilayered constructions comprise sequentially attached layers comprising: a first electrically conductive layer, a first thermosetting polymer layer, a heat resistant film layer, a second thermosetting polymer layer, and a nickel-phosphorus electrical resistance material layer electroplated onto a second electrically conductive layer.

Abstract: A structure and method are provided for reducing the equivalent series resistance of a capacitor. A capacitor includes one or more conductive interconnections contacting an active region of a first conductive plate of the capacitor at a plurality of locations along a lengthwise direction, such that every portion of the active region of the first conductive plate lies within a maximum distance from one of the locations, the maximum distance being less than the lateral dimension of the active region.

Abstract: A capacitor is provided having a first electrode including a layer of low-resistance non-silicon material. The capacitor includes a layer of silicon formed on the low-resistance material layer and a capacitor dielectric formed on the layer of silicon. A second electrode is formed on the capacitor dielectric, the second electrode including at least a material selected from the group consisting of metals, low-resistance compounds of metals, and deposited semiconductors having a dopant concentration of at least 1×1017 cm?3.

Abstract: A capacitor cell for reducing noise in a high drive cell includes a plurality of vias for supplying power to an interconnection layer positioned over the capacitor cell from an upper interconnection layer, so that the resistance of the power supply path is reduced.

Abstract: In one aspect of the invention, in a thin layer capacitor element comprising a capacitor having a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.

Abstract: The present invention relates to a multilayer ceramic capacitor comprising: an element main body in which a dielectric layer and an inner electrode layer are alternately laminated, the inner electrode layer comprises: a composite structure having an inner electrode main layer of a base metal; and ceramic particles buried in the inner electrode main layer, therefore the inner electrode layer can be prevented from being interrupted by spheroidizing during the forming of the inner electrode layer, that is, drop of an electrode effective area can be inhibited, and high electrostatic capacity is obtained.

Abstract: A linear capacitor design providing shielding on all sides of the linear capacitor. In one aspect the capacitor provides a signal side metal layer substantially enclosed by a dielectric material which is, in turn, substantially enclosed by an upper and lower metal shield layer. in another aspect, the upper and lower shield metal layers may be coupled by a plurality of vias. In another aspect, a plurality of alternating intermediate layers provide signal side metal and shield metal separated by dielectric material such that each signal side layer is substantially enclosed by one or more shield metal layers. In another aspect, multiple intermediate signal side metal layers are conductively coupled to one another by a plurality of vias and multiple shield metal layers are conductively coupled to one another by a plurality of vias.

Abstract: High purity refractory metals, valve metals, refractory metal oxides, valve metal oxides, or alloys thereof suitable for a variety of electrical, optical and mill product/fabricated parts usages are produced from their respective oxides by metalothermic reduction of a solid or liquid form of such oxide using a reducing agent that establishes (after ignition) a highly exothermic reaction, the reaction preferably taking place in a continuously or step-wise moving oxide such as gravity fall with metal retrievable at the bottom and an oxide of the reducing agent being removable as a gas or in other convenient form and unreacted reducing agent derivatives being removable by leaching or like process.

Abstract: A high pressure condenser for a magnetron, in which a pair of dielectric ceramics having an arch shape are separated from each other, central conductors are connected to internal peripheries of the dielectric ceramics, and a ground metal is connected to external peripheries of the dielectric ceramics, thereby not requiring any additional structure for connecting the dielectric ceramics and the central conductors, simplifying the structures of the central conductors, and reducing the quantity of the dielectric ceramics needed in proportion to the separation interval between the dielectric ceramics.

Abstract: A base structure is formed from a green material having first and second opposing sides and having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. First and second capacitor structures are formed on the sintered ceramic base structure, each on a respective side of the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill via openings in brittle substrates such as silicon substrates. Capacitor structures on opposing sides provide more capacitance without manufacturing complexities associated with the manufacture of one capacitor structure having a large number of power and ground planes.

Abstract: A combination run capacitor/positive temperature coefficient resistor/overload (CAP/PTCR/OL) module is described. The cover of the combination housing includes a capacitor compartment and terminal openings for receiving blade terminals of a run capacitor. The terminal openings in the cover align with blade receiving receptacles coupled to the PTCR start circuit. The blade terminals of a run capacitor are inserted into the receptacle openings and into electrical engagement with the blade receiving receptacles. The capacitor is supported and protected by a potting mixture filling the capacitor compartment.

Abstract: The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.

Abstract: A power supply apparatus and a power supply method are described, wherein the non-polar characteristics of the electrodes of a capacitor is utilized to improve the energy utilization efficiency of a battery through reciprocating switches of polarity connection between the battery and the capacitor. The voltages of the capacitors can also stay at a near constant level using the polarity reversal mechanism.

Abstract: A dielectric capacitor having self healing properties is disclosed. The capacitor includes a film made of an amorphous aromatic copolycarbonate having a weight average molecular weight of at least 10,000 and a glass transition temperature of at least 160° C. In a preferred embodiment the copolycarbonate includes structural units derived from bisphenol TMC. Also disclosed is a process for making the film.

Abstract: It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelectricity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

Abstract: This invention provides novel capacitors comprising nanofiber enhanced surface area substrates and structures comprising such capacitors, as well as methods and uses for such capacitors.

Abstract: A ferroelectric capacitor including a lower electrode, a ferroelectric layer and an upper electrode. A part of at least any one of the lower and upper electrodes is formed of a material selected from the group consisting of TiOx, TaOx, ReOx, WOx, IrO2, PtO2, RuOx, PdOx, and OsOx.

Abstract: A new capacitor device having two terminals is achieved. The device comprises a plurality of first conductive lines overlying a substrate. Each of the first conductive lines is connected to one of the capacitor device terminals. The adjacent first conductive lines are connected to opposite terminals. The first conductive lines comprise a plurality of conductive materials. A plurality of second conductive lines overlie the plurality of first conductive lines. Each of the second conductive lines is connected to one of the capacitive device terminals. Adjacent second conductive lines are connected to opposite terminals. Any second conductive line overlying any first conductive line is connected to an opposite terminal. The second conductive lines comprises a plurality of conductive materials. A first dielectric layer overlies the substrate and lies between the adjacent first conductive lines. A second dielectric layer lies between the first conductive lines and the second conductive lines.

Abstract: An energy conditioning structure comprised of any combination of multilayer or monolithic energy conditioners with operable conductors, all selectively arranged and shielded for attachment to at least a conductive substrate.

Abstract: A multilayer ceramic electronic component includes a laminate having ceramic layers and internal electrodes stacked alternately one on another, and at least one kind of metal oxide between respective one of the ceramic layers and corresponding one of the internal electrodes. A method of manufacturing a multilayer ceramic electronic component includes a first step of stacking ceramic sheets and metal layers alternately one on another to fabricate a laminate and a second step of firing the laminate. Respective one of the metal layers has, on the surface of a sheet-like first metal, a second metal more susceptible to oxidation than the first metal. The second step is performed at an oxygen partial pressure at which the first metal is hardly oxidized and the second metal is oxidized.

Abstract: The present invention is directed to a high-voltage capacitor, high-voltage capacitor device and magnetron in which, undesirable radiation waves generated in the frequency range of 450 MHz to 1000 MHz in a magnetron are suppressed to such a level that there is no adverse effect on the peripheral devices. The dielectric porcelain comprises a body 210 and through holes 211, 212. The body 210 includes a portion (216, 217) that is narrowed on both sides in the middle of the body in the plan view. The through holes 211, 212 are formed in the body, arranged at a distance from each other over the narrowed portion (216, 217). One individual electrode 213 is provided on the surface of the body 210 at which the through hole 211 opens. The other individual electrode 214 is provided on the surface of the body 210 at which the through hole 212 opens. The common electrode 215 is provided on another surface of the body 210 at which the through holes 211, 212 open.

Abstract: The present invention provides a sidewall oxygen diffusion barrier and a method for fabricating the sidewall oxygen diffusion barrier that reduces the diffusion of oxygen into contact plugs during a CW hole reactive ion etch of a ferroelectric capacitor of an FeRAM device. In one embodiment the sidewall barrier is formed from a substrate fence. In another embodiment, the sidewall barrier is formed by etching back an oxygen barrier.

Abstract: An electro-magnetic interference filter terminal assembly for active implantable medical devices includes a structural pad in the form of a substrate or attached wire bond pad, for convenient attachment of wires from the circuitry inside the implantable medical device to the capacitor structure via thermal or ultrasonic bonding, soldering or the like while shielding the capacitor from forces applied to the assembly during attachment of the wires.

Abstract: A storage capacitor includes at least one first electrode adjacent to at least one second electrode, whereby a lateral capacity is formed between these electrodes. The electrodes include stacks of metal parts and connecting contact elements. The second electrodes can be arranged around the first electrodes, and at least some of the second electrodes can be used jointly with adjacent ones of the first electrodes to form adjacent storage capacitors.

Abstract: A high-voltage ceramic capacitor which includes a capacitor element, at least one metal terminal, and at least one solder joint portion. The capacitor element has electrodes on opposing surfaces of a ceramic porcelain. The metal terminal has one end surface facing one surface of the electrode. The solder joint portion is interposed between one end surface of the metal terminal and one surface of the electrode, and solders both surfaces. The solder constituting the solder joint portion does not contain lead but inorganic particles having a melting point higher than a solder melting point.

Abstract: A Carbon Nanofiber-based (CNT—Carbon Nanotube) electrical high performance battery comprises a cell trough filled with electrolyte, a spring coil locking onto said cell trough, an anode/cathode substrate plate installed within said cell trough with its separation membrane, and positive and negative terminals installed outside the cell cap connecting to said anode/cathode substrate plate respectively.

Abstract: A powder composition for a capacitor comprising a tantalum or niobium and a compound having a silicon-oxygen bond, at least a part of which may be nitrided and which has an average particle size of from 0.1 to 5 ?m; a sintered body using the composition; and a capacitor constituted by the sintered body as one part electrode, and another part electrode. A capacitor favored with high reliability, lower dissipation level of power and smaller deterioration of capacitance than conventional tantalum capacitors using tantalum can be produced by using a sintered body of the powder composition for a capacitor.

Abstract: A modified capacitor for replacing an unmodified capacitor includes two unmodified metallized strips, each supported by an unmodified dielectric film arrangement that is made up of two dielectric films. Each unmodified metallized strip has an elongated length and includes an unmodified active region and a lengthwise unmodified, heavy-edge region. The two dielectric films are wound together to form a roll having opposing ends such that the lengthwise unmodified, heavy-edge region of each unmodified metallized strip cooperate in forming the opposing ends for external electrical connection thereto. The unmodified capacitor exhibits a given value of pulse current tolerance.

Abstract: In a capacitor comprising a pair of electrodes and a dielectric substance intervening between the two electrodes, one of the electrodes is composed of sintered niobium nitride. Preferably, the dielectric substance is composed of niobium oxide and the electrode other than the electrode composed of sintered niobium nitride is composed of an ingredient selected from electrolytes, organic semiconductors and inorganic semiconductors. This capacitor has good environmental stability and good leak current characteristics.

Abstract: The present invention improves the oxidation resistance of an ultrafine metal powder for use in the internal electrode of a multilayer ceramic capacitance and suppresses an increase in the thickness of a metal internal electrode film resulting from the spheroidization of the molten metal under surface tension during the formation of the metal internal electrode film. The ultrafine metal powder has a sulfur-containing compound of not less than one element selected from the group consisting of Y, Zr, and La present on the surface of the particle thereof and is produced by performing an ultrafine metal powder purification step of dispersing the ultrafine metal powder in a slurry, a surface treatment step of adding an aqueous solution containing a sulfate of not less than one element selected from the group consisting of Y, Zr, and La to the slurry to form the compound on the surface of the metal particle, a filtering step, and a drying step.

Abstract: A multilayer ceramic capacitor includes ceramic layers made of a dielectric material, and internal electrodes made of a conductive material. The internal electrodes are provided with cavities which have an average size ranging from about 1.0 ?m to about 10 ?m and occupy about 25% to about 75% of an area of each internal electrode. The ceramic layers and the internal electrodes are stacked alternately and each cavity is devoid of the dielectric material and the conductive material.

Abstract: A detector assembly including a support element, a first capacitor plate and a second capacitor plate. The support element is configured to attach the detector assembly to a chamber wall that separates a lower pressure region and a higher pressure region. A surface of the second capacitor plate is spaced apart from a surface of the first capacitor plate to define a capacitor gap. The first capacitor plate is positioned to be inside the lower pressure region when the detector assembly is attached to the chamber wall. The second capacitor plate is supported by the support element through insulating couplings. The detector assembly also includes a means for reducing mechanical load on the insulating couplings between the second capacitor plate and the support element. The reduced mechanical load includes load caused by a pressure difference between the lower and higher pressure regions.

Abstract: A metallized film capacitor is made by winding or laminating a both-side metallized polypropylene (PP) film and a non-metallized PP film. Limiting the heat shrinkage factor and the thickness of the PP films, the position of deposited electrodes, and the rate of the peeled area of the deposited electrodes to a certain range provides a metallized film capacitor having improved dieletric strength, tan ?, and charge-discharge characteristics.

Abstract: A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown.

Abstract: A decoupling capacitor is formed in a semiconductor substrate that includes a strained silicon layer. A substantially flat bottom electrode is formed in a portion of the strained silicon layer and a capacitor dielectric overlying the bottom electrode. A substantially flat top electrode overlies said capacitor dielectric. The top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

Abstract: A storage capacitor plate for a semiconductor assembly having a substantially continuous porous conductive storage plate comprising silicon nanocrystals residing along a surface of a conductive material and along a surface of a coplanar insulative material adjacent the conductive material, a capacitor cell dielectric overlying the silicon nanocrystals and an overlying conductive top plate. The conductive storage plate is formed by a semiconductor fabrication method comprising forming silicon nanocrystals on a surface of a conductive material and on a surface of an insulative material adjacent the conductive material, wherein silicon nanocrystals contain conductive impurities and are adjoined to form a substantially continuous porous conductive layer.

Abstract: A single layer ceramic capacitor for wire bonding or solder or epoxy attachment wherein a bottom metallization is of a lesser purity than a top metallization whereby the bottom metallization may be effectively soldered without leaching of the metal and the top metallization may be wire bonded. In an exemplary embodiment, the top metallization is essentially pure gold and the bottom metallization is an alloy of gold and platinum and/or palladium. The top and bottom metallizations are provided on a dielectric body that advantageously comprises a ceramic having a sintering temperature below the melting point of gold. In a further exemplary embodiment, the capacitance of the capacitor may be enhanced by providing one or more interior metallization planes parallel to the exterior metallizations and connected thereto by conductive vias.

Abstract: A capacitor has electrodes at surfaces thereof, with one of the electrodes secured onto one surface of a grounding metal. Through conductors pass through the capacitor and the grounding metal and are connected to the other electrodes so as to achieve electrical continuity. An insulating case is provided at one surface of the grounding metal, with one end of the insulating case fitted around the external circumference of the raised portion of the grounding metal. Insulating resin fills a space inside the insulating case, the internal space of the grounding metal and a space around the capacitor. The insulating resin comprises an epoxy resin containing a brominated fire retardant, and the brominated fire retardant is a brominated aromatic glycidyl ether.

Abstract: A monolithic ceramic capacitor includes a plurality of stacked ceramic dielectric layers, thin internal conductors that are each placed between the ceramic dielectric layers and arranged in parallel, and external conductors each electrically connected to ends of the corresponding internal conductors. The ceramic dielectric layers have a thickness of about 0.5 ?m to less than about 1.5 ?m. The internal conductors have a thickness of about 0.1 ?m to about 0.4 ?m. The internal conductors each have spaces therein and the total area percentage of the spaces in each internal conductor is more than about 10% to less than about 40% of the area of the internal conductor. The ceramic dielectric layers contain a sintering additive containing Si, and the sintering additive is placed in the spaces in a segregated manner.

Abstract: An ultra miniature high temperature capacitive inductive pressure transducer is fabricated by MEMS techniques. The transducer consists of two separated pieces of silicon which form the plates of the capacitor, one of which plate is micromachined in such a way to allow a controlled deflection with pressure. The gap between the two capacitive plates is determined by an extending rim on one of the two plates. The two pieces of silicon are subsequently fusion bonded, leading a very small gap between the two plates. An inductor is formed on the top surface of one of the pieces of silicon by sputtering metal in a spiral like fashion on the back side of the non-micromachined plate.

Abstract: A ferroelectric capacitor including a silicon oxidation layer, a lower electrode, a ferroelectric layer and an upper electrode formed on a silicon substrate. A part of at least any one of the lower and upper electrodes is formed of a material selected from the group consisting of TiOx, TaOx and ReOx.