Abstract: A capacitor electrode is composed of an SrRuO3 film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.

Abstract: A hybrid capacitive storage system and method for storing electrical energy and hydrogen comprising at least a first dielectric layer, which dielectric layer is substantially impermeable to hydrogen. The hybrid storage system further comprises at least a first catalytic electrode layer disposed on at least a portion of a first surface of said first dielectric layer, which first catalytic electrode layer converts molecular hydrogen into atomic hydrogen, an electrode layer disposed on at least a portion of a second surface of said first dielectric layer, which electrode layer is selectively electrically connected to said first catalytic electrode layer; and at least one field generator for selectively applying a field to said storage system.

Abstract: A capacitor comprising: a plurality of laminated dielectric layers; a plurality of inner electrode layers each disposed between mutually adjacent ones of the dielectric layers; and dummy electrode layers respectively disposed between the dielectric layers, disposed on sides closer to outer peripheral sides of the dielectric layers than to the inner electrode layers and disposed apart from the inner electrode layers.

Abstract: A multilayer electrode structure has a conductive layer including aluminum, an oxide layer formed on the conductive layer, and an oxygen diffusion barrier layer. The oxide layer includes zirconium oxide and/or titanium oxide. The oxygen diffusion barrier layer is formed at an interface between the conductive layer and the oxide layer by re-oxidizing the oxide layer. The oxygen diffusion barrier layer includes aluminum oxide.

Abstract: Terminal pins comprising an outer coating of palladium coating a core material other than of palladium for incorporated into feedthrough filter capacitor assemblies are described. The feedthrough filter capacitor assemblies are particularly useful for incorporation into implantable medical devices such as cardiac pacemakers, cardioverter defibrillators, and the like, to decouple and shield internal electronic components of the medical device from undesirable electromagnetic interference (EMI) signals.

Abstract: A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.

Abstract: An electronic component is provided which includes external electrodes having a multilayer structure of first and second sintered electrode layers that are densely sintered and have less possibility of causing poor appearance and decreased reliability in electrical connection. Each external electrode includes a first sintered electrode layer and a second sintered electrode layer. The first sintered electrode layer contains a first borosilicate glass containing an alkali metal in which there is 85% to 95% by weight of silicon and 0.5% to 1.5% by weight of the alkali metal based on 100% by weight of all contained elements other than boron. The second sintered electrode layer contains a second borosilicate glass containing an alkali metal in which there is 65% to 80% by weight of silicon and 3.5% to 8.0% by weight of the alkali metal based on 100% by weight of all contained elements other than boron.

Abstract: Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a method may include forming a multilayer dielectric film on and/or over a lower metal line and forming an upper metal layer on and/or over the multilayer dielectric film. A semiconductor device fabricated by the method may include a lower metal line, a multilayer dielectric film including a plurality of layers laminated in this order on and/or over the lower metal line, and an upper metal layer arranged on and/or over the multilayer dielectric film. Accordingly, a semiconductor device may achieve a high-capacitance (i.e. not less than 6 fF/um2) capacitor that may be useful for non-memory products, e.g., logic products. In addition, the capacitor may have a high capacitance, and may exhibit superior durability and reliability due to good leakage current and breakdown voltage properties.

Abstract: Laser scan annealing of integrated circuits offers advantages compared to rapid thermal annealing and furnace annealing, but can induce overheating in regions of components with polysilicon layers. Segmented polysilicon elements to reduce overheating is disclosed, as well as a method of forming components with segments polysilicon elements.

Abstract: Provided is a capacitor for a semiconductor device. The capacitor comprises a bottom electrode, a dielectric pattern, and a top electrode. The bottom electrode has an uneven surface. The dielectric pattern is on the bottom electrode, and the top electrode is on the dielectric pattern. The bottom electrode has a first height in edge and center regions thereof, and a protrusion between the edge region and the center region of the bottom electrode having a second height greater than the first height.

Abstract: A film capacitor including a pair of electrodes having multiple pores is provided. The film capacitor includes a polymer film deposited upon each of the pair of electrodes to form a dielectric layer.

Abstract: An MIM capacitance element (capacitance lower electrode, capacitance insulation film and capacitance upper electrode) is provided on a first insulation film on a semiconductor substrate. An interlayer insulation film is provided so as to cover the MIM capacitance element and flattened. The interlayer insulation film is provided with a first connection plug connected to the capacitance upper electrode, a first wiring layer, and a second wiring layer. A second insulation film is provided on the interlayer insulation film. The second insulation film is provided with first and second openings. A wiring pull-out portion which connects the first connection plug and the second wiring layer to each other is provided on the second insulation film.

Abstract: A method of forming a conductor on a substrate including steps of depositing tantalum on a glass layer of the substrate; oxidizing the tantalum; and depositing a noble metal on the oxidized tantalum to form the conductor. The method can be used to form a ferroelectric capacitor or other thin film ferroelectric device. The device can include a substrate comprising a glass layer; and an electrode connected to the glass layer. The electrode comprising can include a noble metal connected to the glass layer by an adhesion layer comprising Ta2O5.

Abstract: A cylindrical battery including a wound electrode assembly and a center pin disposed in a center space of the electrode assembly, the center pin having a gap along its length, the gap defined by opposing edges of the center pin, wherein at least one of the opposing edges is sloped.

Abstract: The invention relates to a capacitor having a porous electrically conductive substrate on whose inner and outer surfaces a first layer of a dielectric and an electrically conductive second layer are applied. The invention also relates to a method for the production of such capacitors and to their use in electrical and electronic circuits.

Abstract: The invention includes capacitor constructions which have a layer of aluminum oxide between a high-k dielectric material and a layer containing titanium and nitrogen. The layer containing titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.

Abstract: A semiconductor device includes a semiconductor layer with a first electrode formed by a sintered, conductive, porous granulate and formed in or on the semiconductor layer or in or on at least one insulating layer arranged on the semiconductor layer; furthermore dielectric material covering the surface of the sintered, conductive, porous granulate, and a second electrode at least partially covering the dielectric material, wherein the dielectric material electrically insulates the second electrode from the first electrode.

Abstract: A composite electronic component has: a first multilayer section including an electrode layer; and a second multilayer section laid on the first multilayer section and including at least one ground electrode layer on which a ground electrode is formed, and at least one hot electrode layer on which a hot electrode is formed. In the second multilayer section, the hot electrode layer is interposed between the ground electrode layer nearest to the first multilayer section, and the first multilayer section and in the ground electrode on the ground electrode layer nearest to the first multilayer section, at least a part of an exposed portion exposed from the hot electrode to the first multilayer section side is a narrow portion narrower than a width of an unexposed portion not exposed therefrom.

Abstract: A multilayer polymer film capacitor block, adapted to accept high currents. At least one multilayer polymer film capacitor is fit into a cavity defined in a rigid, thermally conductive structure. The cavity is sized and shaped to receive said multilayer polymer film capacitor when said capacitor is at a temperature below 40° C., but fitting said capacitor in a conformal manner so that as said capacitor is raised to temperatures above 40° C., said cavity constrains expansion of said capacitor.

Abstract: For mounting on a substrate by using an electroconductive adhesive, an electroconductive paste for forming an external electrode which has improved moisture resistance and which is resistant to occurrence of external-electrode peeling, as well as a ceramic electronic component including the electroconductive paste are provided. The electroconductive paste includes a base-metal electroconductive powder, first glass frit, and an organic vehicle, wherein the first glass frit has a B2O3 content of 10 to 20 percent by mole, a SiO2 content of 50 to 65 percent by mole, an alkali metal oxide content of 10 to 20 percent by mole, a ZnO content of 1 to 5 percent by mole, a TiO2 content of 1 to 5 percent by mole, a ZrO2 content of 1 to 5 percent by mole, and an Al2O3 content of 1 to 5 percent by mole.

Abstract: Filtering assembly for a feedthrough, for implantable medical devices, having operating conductive pin(s) and a ground conductive pin. The filtering assembly has: first insulating substrate, first conductive layer accommodated at first side of first insulating substrate and second conductive layer accommodated at second side of first insulating substrate opposing first side, first conductive layer comprises a conductive ground ring accommodated that surrounds the circumference of one end of the operating conductive pins and capacitive element(s), wherein each of the capacitive element(s) provides on the first side a connection to the operating conductive pin(s) and on the second side a connection to the ground ring, wherein the ground ring is connected to the ground pin, the second conductive layer comprises a ground plane providing connection to the ground ring of the first conductive layer and a connection to the ground pin.

Abstract: A multi-terminal capacitor includes a first capacitor plate, a second capacitor plate in parallel with the first capacitor plate, and a third capacitor plate in parallel with the first and second capacitor plates. The first, second and third capacitor plates are separated from each other by dielectric material, such that the first, second and third capacitor plates function as a first, second and third terminals, respectively, for capacitors formed therebetween.

Abstract: A multilayer ceramic capacitor and a method of manufacturing the same is provided. The capacitor comprises dielectric layers and internal electrode layers alternately stacked. Two of the internal electrode layers that are located outermost and/or at least one of the internal electrode layers that is located inside each outermost internal electrode layer are substantially oxidized and do not function as electrodes. The capacitance of the multilayer ceramic capacitor depends on the unoxidized internal electrode layers other tan the oxidized ones. The method of manufacturing a multilayer ceramic capacitor comprises forming green dielectric layers, forming green internal electrode layers, preparing a green ceramic chip, forming green external electrodes, and firing the green ceramic chip.

Abstract: A capacitor for use with RF signals of an operating frequency has a parallel plate configuration including a bottom electrode, a top electrode, and a dielectric layer disposed between the bottom and top electrodes, and an additional mass layer disposed on top of the top electrode. The parallel plate configuration is capable of receiving a DC voltage bias that affects the capacitance value of the parallel plate configuration, and exhibits a standing wave resonance frequency at the operating frequency. The mass layer has a density and a thickness selected to dampen the magnitude of the resonance of the parallel plate configuration at the standing wave resonance frequency and shift the standing wave resonance frequency away from the operating frequency.

Abstract: A capacitor cell for reducing noise in a high drive cell includes a plurality of vias for supplying power to an interconnection layer positioned over the capacitor cell from an upper interconnection layer, so that the resistance of the power supply path is reduced.

Abstract: This invention relates generally to capacitors comprising organized assemblies of carbon and non-carbon compounds. This invention further relates to methods of making such organized structures. It also relates to devices containing such structures. In preferred embodiments, the organized structures of the instant invention take the form of nanorods or their aggregate forms. More preferably, a nanorod is made up of a carbon nanotube filled, coated, or both filled and coated by a non-carbon material. In particular, the present invention is directed to a capacitor electrode comprising a carbon nanotube filled with one or more non-carbon materials comprising titanium, a titanium compound, manganese, a manganese compound, cobalt, nickel, palladium, platinum, bromine, iodine, an interhalogen compound, or the combination thereof.

Abstract: A capacitor includes a lower electrode, a dielectric layer over the lower electrode, and an upper electrode having a stack structure including a ruthenium-containing layer and a tungsten-containing layer over the dielectric layer.

Abstract: Disclosed are an embedded capacitor and a printed circuit board including the same that can minimize the oxidization of a metal layer. A thin-film capacitor can include a first metal electrode film; a barrier layer, formed on the first metal electrode film to include a conductive oxide; a dielectric film, formed on the barrier layer; and a second metal electrode film, formed on the dielectric film. With the present invention, the outstanding characteristic of a ferroelectric thin film can be provided by minimizing the oxidization of a copper film in the heat treatment after forming the ferroelectric thin film on the copper film.

Abstract: Vertical parallel plate (VPP) capacitor structures that utilize different spacings between conductive plates in different levels of the capacitor stack. The non-even spacings of the conductive plates in the capacitor stack decrease the susceptibility of the capacitor stack of the VPP capacitor to ESD-promoted failures. The non-even spacings may be material specific in that, for example, the spacings between adjacent conductive plates in different levels of the capacitor stack may be chosen based upon material failure mechanisms for plates containing different materials.

Abstract: Method of synthesis for a material made of particles having a core and a coating and/or being connected to each other by carbon cross-linking, the core of these particles containing at least one compound of formula LixM1-yM?y(XO4)n, in which x, y and n are numbers such as 0?x?2, 0?y?0.6 and 1?n?1.5, M is a transition metal, M? is an element with fixed valency, and the synthesis is carried out by reaction and bringing into equilibrium the mixture of precursors, with a reducing gaseous atmosphere, in such a way as to bring the transition metal or metals to the desired valency level, the synthesis being carried out in the presence of a source of carbon called carbon conductor, which is subjected to pyrolysis. The materials obtained have excellent electrical conductivity, as well as very improved chemical activity.

Abstract: An exemplary embodiment providing one or more improvements includes a capacitor with a segmented end electrode and methods for segmenting an end electrode of a capacitor for reducing or eliminating instances of thermally induced damage of the capacitor.

Abstract: Methods, constructions, and devices that include tantalum oxide layers adjacent to niobium nitride are disclosed herein. In certain embodiments, the niobium nitride is crystalline and has a hexagonal close-packed structure. Optionally, the niobium nitride can have a surface that includes niobium oxide adjacent to at least a portion thereof. In certain embodiments, the tantalum oxide layer is crystallographically textured and has a hexagonal structure.

Abstract: A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

Abstract: Devices and methods for their formation, including electronic devices containing capacitors, are described. In one embodiment, a device includes a substrate and a capacitor is formed on the substrate. The capacitor includes first and second electrodes and a capacitor dielectric between the first and second electrodes. At least one of the first and second electrodes includes a metal layer having carbon nanotubes coupled thereto. In one aspect of certain embodiments, the carbon nanotubes are at least partially coated with an electrically conductive material. In another aspect of certain embodiments, the substrate comprises an organic substrate and the capacitor dielectric comprises a polymer material. Other embodiments are described and claimed.

Abstract: The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.

Abstract: A method for manufacturing a multilayer electronic component, includes the steps of preparing a laminate including a plurality of insulating layers laminated to each other and a plurality of internal electrodes formed along interfaces between the insulating layers, edges of the internal electrodes being exposed at a predetermined surface of the laminate, and forming an external electrode on the predetermined surface so as to electrically connect the edges of the internal electrodes, which are exposed at the predetermined surface of the laminate.

Abstract: A highly reliable multilayer ceramic electronic device is obtained while preventing crack defects generated in a ceramic laminate by application of a heat shock in a mounting step or the like. The multilayer ceramic electronic device is constructed such that the average value of continuities of internal electrodes located in two regions (f) is lower by 5% to 20% inclusive than the average value of continuities of internal electrodes located in the central portion in a lamination direction. The two regions (f) are the regions from the topmost internal electrode and the bottommost internal electrode located in the lamination direction to the inside, respectively, within 10% of the distance (d) therebetween. Continuity is defined by (X?Y)/X in which X is the length of a cross section of an internal electrode in one direction and Y indicates the sum of gaps (g) formed by pores in the cross section of the internal electrode.

Abstract: The electronic device according to the present invention comprises capacitor element body 4 wherein internal electrode layer 12 and ceramic layer 10 is included. Internal electrode layer 12 includes Ni and at least one element from Re, Ru, and Ir. The ceramic layer 10 substantially doesn't include Re, Ru, Os, and Ir.

Abstract: A ferroelectric capacitor structure having a lattice matched lanthanide oxide film intervening layer for providing a high polarization state. The capacitor structure includes a glass substrate, a transparent electrode layer disposed on the glass substrate, a lanthanide oxide film disposed on the transparent layer and a ferroelectric perovskite layer disposed on the lanthanide oxide film. The claim also encompases semi-transparent applications where one conductive electrode (top or bottom) is not transparent.

Abstract: A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor further has a reflective layer with high reflectivity so as to provide the storage capacitor with the scattering effect toward an external light source. A method of manufacturing the storage capacitor by two photolithography processes is also shown.

Abstract: A method of fabricating an integrated circuit device includes forming a plurality of lower capacitor electrodes vertically extending from a substrate. The plurality of lower capacitor electrodes respectively include an inner sidewall and an outer sidewall. At least one support pattern is formed vertically extending between ones of the plurality of lower capacitor electrodes from top portions thereof opposite the substrate and along the outer sidewalls thereof towards the substrate to a depth that is greater than a lateral distance between adjacent ones of the plurality of lower capacitor electrodes. A dielectric layer is formed on the support pattern and on outer sidewalls of the plurality of lower capacitor electrodes, and an upper capacitor electrode is formed on the dielectric layer. Related devices are also discussed.

Abstract: A capacitor feedthrough assembly with a cavity including a capacitor stack, including one or more substantially flat anode layers and one or more substantially flat cathode layers in a case with a cover, the case having a first opening sized for passage of the capacitor stack and a second opening defined by a lip. Additionally, the capacitor includes a conductive member attached to the capacitor stack and disposed at least part way through the second opening in the case, and an isolating element disposed between the lip and at least a portion of the connected stack and conductive member. Also, the capacitor includes a curable resin sealingly disposed in the cavity defined by the second opening, the isolating element, and the conductive member, the curable resin electrically isolating the case from the conductive member.

Abstract: In the capacitor, an insulating structural member 28 is arranged on an earth metal fitting 27. In the earth metal fitting 27, two sets of cylindrical-shaped portions 26 are separately arranged in an interval, and a floating portion 27a is formed. The insulating structural member 28 is arranged opposite to the floating portion 27a of this earth metal fitting 27 in such a manner that both a concave portion 28a and a convex portion 28b are formed on the insulating structural member 28 to be fitted to the cylindrical-shaped portion 26. Since a feedthrough conductor 29 penetrates a through hole 30 of the insulating structural member 28, the earth metal fitting 27, the insulating structural member 28, and the feedthrough conductor 29 are positioned with each other. Then, one opening portion 31a of an insulating case 31 is fitted into the floating portion 27a of the earth metal fitting 27.

Abstract: The present invention provides a raw material carbon composition that is converted to a carbon material for an electrode in an electric double layer capacitor that can develop a high level of electrostatic capacity with good reproducibility without producing any synthetic pitch. The raw material carbon composition is converted to a carbon material for an electrode in an electric double layer capacitor upon activation treatment and is characterized in that, when the raw material carbon composition is carbonized in an inert gas atmosphere at a temperature of 1000 to 1500° C., the true relative density (RD) and the total hydrogen content (TH %) in the carbonized material obtained after the burning satisfy the following formula (1): RD=?0.75TH %+intercept ??(1) wherein the intercept is 2.160 or greater.

Abstract: A polymer/ceramic composite paste for an embedded capacitor includes an organic solvent, a ceramic powder having a particle diameter of not more than 20 ?m dispersed in the organic solvent, a polymer and a hardener. The use of the polymer/ceramic composite paste enables the formation of a dielectric layer having a high dielectric constant. The polymer/ceramic composite paste can be applied by a screen printing technique and is planarized to locally form a polymer/ceramic composite dielectric layer having a thickness of, e.g., up to 20 ?m on a desired region. Accordingly, electrical parasitics resulting from the formation of a capacitor on unwanted regions can be reduced, and the capacitance error can be reduced.

Abstract: A semiconductor device having a metal/insulator/metal (MIM) structure and a method for fabricating the same are provided. The semiconductor device includes a lower structure layer including a metal wiring; and an MIM stack on the lower structure layer; wherein the MIM stack includes a lower metal electrode film formed on a substrate including the lower structure layer, a multi-layer dielectric film including a first insulating film and a second insulating film formed on the lower metal electrode film, and an upper metal electrode film formed on the multi-layer dielectric film.

Abstract: A capacitor includes a first electrode having a conductive pattern and an anti-oxidation pattern contacting the conductive pattern and a second electrode overlapping the first electrode. The capacitor further includes a capacitor dielectric layer disposed between the first and second electrodes, and having a blanket dielectric layer and a partial dielectric layer. The blanket dielectric layer is disposed between the first and second electrodes, and the partial dielectric layer is disposed between the blanket dielectric layer and the anti-oxidation pattern.

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract: A feedthrough filter capacitor assembly includes a capacitor having first and second sets of conductive electrode plates embedded within a dielectric body and mounted to the hermetic terminal of an implantable medical device. A laminar delamination gap is provided between the capacitor sealing materials and the hermetic terminal assembly to facilitate helium leak detection. At least one feedthrough terminal pin extends through the capacitor in conductive relation with the first set of electrode plates, and an outer ferrule is mounted about the capacitor in conductive relation with the second set of electrode plates. The mounting washer is spaced against the hermetic seal and is adhesively connected to the feedthrough capacitor. The mounting washer forms a laminar flow delamination through which helium molecules can flow during a helium leak detection test. Provision is made for a pre-connection to the gold braze so that the capacitor inside diameter termination is not electrically isolated from the lead wire.

Abstract: The present invention provides an electric double layer capacitor that has less chance for internal resistance increase. For this objective, in this electric double layer capacitor, an electric double layer capacitor element sandwiches a separator between a cathode and an anode, arranged inside a container comprising a lid and a concave shaped containing portion. On the inner bottom face in the containing portion, an insulating layer having a first conductive layer connected to a connecting terminal, and an opening portion penetrates to the first conductive layer are formed, wherein a second conductive layer fills inside the opening portion. Onto the insulating layer and the second conductive layer, a third conductive layer which laminates a first layer comprised of aluminum and a second layer comprised of carbon, is formed and connected to the cathode. The fourth conductive layer is connected to the anode, and also connected to the connecting terminal.