Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

Abstract: Disclosed is a semiconductor package comprising a logic die mounted on an interposer substrate, and a memory stack structure disposed side-by-side with the logic die. The memory stack structure includes a buffer die mounted on the interposer substrate, and a plurality of memory dies stacked on the buffer die. The buffer die has a first surface that faces the interposer substrate and a second surface that faces the plurality of memory dies. The number of data terminals on the second surface is greater the number of connection terminals on the first surface.

Abstract: A semiconductor package includes: a connection structure having a first surface and a second, and including a redistribution layer; a passive component disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a semiconductor chip disposed on the first surface of the connection structure, and electrically connected to the redistribution layer; a first encapsulant disposed on the first surface of the connection structure and covering at least a portion of the semiconductor chip; a second encapsulant disposed on the first surface of the connection structure and covering at least a portion of the passive component; an antenna substrate disposed on the first encapsulant and including a wiring layer, at least a portion of the wiring layer including an antenna pattern; and a through via penetrating at least a portion of each of the connection structure, the first encapsulant, and the antenna substrate.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.

Abstract: A component carrier includes a stack having at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, a component embedded in the stack, and a functional film covering at least part of the component and having an inhomogeneous thickness distribution over at least part of a surface of the component.

Abstract: Layout techniques for chip packages on printed circuit boards are disclosed that address the multivariate problem of minimizing routing distances for high-speed I/O pins between chip packages while simultaneously providing for the rapid provision of transient power demands to the chip packages. The layout techniques may also enable improved thermal management for the chip packages.

Abstract: An electronic circuit board includes a printed circuit board and first and second electronic components. The printed circuit board includes a first insulating layer, a second insulating layer attached to the first insulating layer and in which is formed an open cavity, and a second conductive layer attached to the second insulating layer. The second conductive layer is treated to form a surface solder pad. The first electronic component is housed in the open cavity of the second insulating layer. The second electronic component is placed on the second insulating layer without overlapping with the open cavity. The first electronic component and the second electronic component each include a termination soldered on the surface solder pad, the surface solder pad being shared by the first and second electronic components.

Abstract: Provided are a semiconductor package and a method for fabricating the semiconductor package. The method includes the followings steps: a first workpiece is provided, where the first workpiece includes a first substrate and multiple first rewiring structures arranged on the first substrate at intervals, and each first rewiring structure includes at least two first rewiring layers; an encapsulation layer is formed on the first rewiring structures, where the encapsulation layer is provided with multiple first through holes, and the first through holes expose one first rewiring layer; at least two second rewiring layers are disposed on a side of the encapsulation layer facing away from the first rewiring layer; multiple semiconductor elements are provided, where the semiconductor elements are arranged on a side of the first rewiring structures facing away from the encapsulation layer, where the first rewiring layers are electrically connected to pins of the semiconductor elements.

Abstract: A radio frequency module includes: a module board; a first electronic component and a second electronic component that are disposed apart from each other on the module board; and a third electronic component that is electrically connected to both the first electronic component and the second electronic component, and is disposed extending across the first electronic component and the second electronic component.

Abstract: According to one embodiment, a semiconductor device includes an integrated circuit (IC) chip and a silicon capacitor. The IC chip has a first terminal and a second terminal on a first surface. The silicon capacitor has a first electrode and a second electrode on a second surface facing the first surface. The first electrode is electrically connected to the first terminal through a first conductive member, and the second electrode is electrically connected to the second terminal through a second conductive member.

Abstract: A package assembly includes a substrate and at least a first die having a first contact array and a second contact array. First and second via assemblies are respectively coupled with the first and second contact arrays. Each of the first and second via assemblies includes a base pad, a cap assembly, and a via therebetween. One or more of the cap assembly or the via includes an electromigration resistant material to isolate each of the base pad and the cap assembly. Each first cap assembly and via of the first via assemblies has a first assembly profile less than a second assembly profile of each second cap assembly and via of the second via assemblies. The first and second cap assemblies have a common applied thickness in an application configuration. The first and second cap assemblies have a thickness variation of ten microns or less in a reflowed configuration.

Abstract: According to an embodiment disclosed in the specification, an electronic device comprises a battery disposed inside the electronic device; a printed circuit board (PCB) disposed inside the electronic device; at least one electronic component disposed on the PCB; and a first buck converter having a first end and a second end, wherein the first end is routed to the battery; and a second buck converter having a first end and a second end, wherein the first end is selectively electrically connected to the second end of the first buck converter, and the second end is routed to the at least one electronic component, and wherein the first buck converter and the second buck converter are configured to boost a voltage provided from the battery through an electrical path formed from the battery by the first end of the first buck converter, and the second end of the first buck converter, the first end of the second buck converter and the second end of the second buck converter to the at least one electronic component.

Abstract: A printed circuit board includes a first insulating layer; an external connection pad embedded in a first surface of the first insulating layer and having a first externally exposed surface disposed at substantially the same level as the first surface of the first insulating layer; a second insulating layer disposed on a second surface of the first insulating layer and having a first surface in contact with the second surface of the first insulating layer; and a first wiring pattern embedded in the second insulating layer and exposed from the first surface of the second insulating layer to be in contact with a second externally exposed surface of the external connection pad opposing the first externally exposed surface.

Abstract: A method including forming a frame having an opening, forming a first metal layer, forming a first encapsulant, forming an insulation layer on the first metal layer, forming a first through-hole and a second through-hole penetrating the insulation layer and the first encapsulant, forming a second metal layer and a third metal layer, forming a second encapsulant, forming a first metal via and a second metal via penetrating the second encapsulant and a metal pattern layer on the second encapsulant, and forming a connection structure. The first metal layer and the second metal layer respectively are formed to extend to a surface of each of the first encapsulant and the frame, facing the metal pattern layer, and the first metal layer and the second metal layer are connected to the metal pattern layer through the first metal via and the second metal via having heights different from each other.

Abstract: Described are microelectronic devices including a substrate formed with multiple build-up layers, and having at least one build-up layer formed of a fiber-containing material. A substrate can include a buildup layers surrounding an embedded die, or outward of the build-up layer surrounding the embedded die that includes a fiber-containing dielectric. Multiple build-up layers located inward from a layer formed of a fiber-containing dielectric will be formed of a fiber-free dielectric.

Abstract: The present disclosure relates to a semiconductor package device including a stacked antenna structure with a high-k laminated dielectric layer separating antenna and ground planes, and a method of manufacturing the structure. A semiconductor die is laterally encapsulated within an insulating structure comprising a first redistributions structure. A second redistribution structure is disposed over and electrically coupled to the first redistribution structure and the die. The second redistribution structure includes the stacked antenna structure which includes first and second conductive planes separated by a high dielectric constant laminated dielectric structure. The first conductive plane includes openings and the second conductive plane is configured to transmit and receive electromagnetic waves through the openings in the first conductive plane.

Abstract: The present disclosure relates to a method of manufacturing an array substrate. The method of manufacturing an array substrate may include forming a main via hole in a substrate, filling a first conductive material in the main via hole, and forming a pixel circuit layer on a first surface of the substrate. The pixel circuit layer may include a first via hole. An orthographic projection of the first via hole on the substrate may at least partially overlap the corresponding main via hole.

Abstract: A micro light-emitting device display apparatus includes a circuit substrate, at least one micro light-emitting device, and at least one conductive bump. The circuit substrate includes at least one pad. The micro light-emitting device is disposed on the circuit substrate and includes at least one electrode. At least one of the pad and the electrode has at least one closed opening. The conductive bump is disposed between the circuit substrate and the micro light-emitting device. The conductive bump extends into the closed opening and defines at least one void with the closed opening. The electrode of the micro light-emitting device is electrically connected to the pad of the circuit substrate with the conductive bump.

Abstract: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.

Abstract: An electronic device includes one or more multinode pads having two or more conductive segments spaced from one another on a semiconductor die. A conductive stud bump is selectively formed on portions of the first and second conductive segments to program circuitry of the semiconductor die or to couple a supply circuit to a load circuit. The multinode pad can be coupled to a programming circuit in the semiconductor die to allow programming a programmable circuit of the semiconductor die during packaging. The multinode pad has respective conductive segments coupled to the supply circuit and the load circuit to allow current consumption or other measurements during wafer probe testing in which the first and second conductive segments are separately probed prior to stud bump formation.

Abstract: In some examples, an electronic package and methods for forming the electronic package are described. The electronic package can be formed by disposing an interposer on a surface of a substrate having a first pitch wiring density. The interposer can have a second pitch wiring density different from the first pitch wiring density. A layer of non-conductive film can be situated between the interposer and the surface of the substrate. A planarization process can be performed on a surface of the substrate. A solder resist patterning can be performed on the planarized surface the substrate. A solder reflow and coining process can be performed to form a layer of solder bumps on top of the planarized surface of the substrate. The interposer can provide bridge connection between at least two die disposed above the substrate. Solder bumps under the interposer electrically connect the substrate and the interposer.

Abstract: A circuit board assembly includes a printed circuit board (PCB) substrate, a cooling assembly, an intermediate layer, one or more power devices, and a plurality of conductive layers arranged within the PCB substrate. The PCB substrate has a first surface and an opposite second surface that has a first electrical pattern. The cooling assembly is thermally coupled to the second surface of the PCB substrate. The intermediate layer is sandwiched between the PCB substrate and the cooling assembly. The one or more power devices are embedded within the PCB substrate. The plurality of conductive layers are configured to electrically couple the one or more power devices and thermally couple the one or more power devices to the cooling assembly. At least a portion of the intermediate layer has a second electrical pattern that is similarly patterned to the first electrical pattern of the second surface of the PCB substrate.

Abstract: An integrated transformer and an electronic device are disclosed. The integrated transformer includes at least one first base plate and at least one second base plate. Each of the first and second base plate defines multiple annular accommodating grooves. The annular accommodating grooves divide each of the first and second base plate into multiple central parts and a peripheral part Each central part defines multiple inner via holes there through. The peripheral part defines multiple outer via holes there through. The integrated transformer further includes multiple magnetic cores disposed in the respective annular accommodating groove and transmission wires disposed on both sides of the first and second base plates. Transformers and the filters are arranged on two base plates respectively, and the thickness of the transmission wire layers of the filters is less than that of the transformers. Thus, the structure of the electromagnetic device may be more compact.

Abstract: A substrate with an electronic component embedded therein includes: a core structure having a cavity; a metal layer disposed on a bottom surface of the cavity of the core structure; and an electronic component disposed on the metal layer in the cavity of the core structure. The substrate with the electronic component embedded therein has an excellent heat dissipation effect.

Abstract: Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

Abstract: A method for manufacturing electronic chips includes forming, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, trenches laterally separating the integrated circuits. At least one metal connection pillar per integrated circuit is deposited on the side of the upper face of the substrate, and a protective resin extends in the trenches and on an upper face of the integrated circuits. The method further includes forming, from an upper face of the protective resin, openings located across from the trenches and extending over a width greater than or equal to that of the trenches, so as to clear a flank of at least one metal pillar of each integrated circuit. The integrated circuits are separated into individual chips by cutting.

Abstract: An LC composite component includes a non-magnetic substrate, a magnetic layer with magnetism, capacitors, inductors, and core parts with magnetism. The non-magnetic substrate includes a first surface and a second surface on a side opposite to the first surface. The magnetic layer is disposed to face the first surface of the non-magnetic substrate. The inductors and the capacitors are disposed between the first surface of the non-magnetic substrate and the magnetic layer. The core parts are disposed between the first surface of the non-magnetic substrate and the magnetic layer and connected to the magnetic layer. The thickness of the core parts is 1.0 or more times the thickness of the magnetic layer in a direction perpendicular to the first surface of the non-magnetic substrate, and each of the magnetic layer and the core parts contains magnetic metal particles and resin.

Abstract: A package structure including a lead frame structure, a die, an adhesive layer, and at least one three-dimensional (3D) printing conductive wire is provided. The lead frame structure includes a carrier and a lead frame. The carrier has a recess. The lead frame is disposed on the carrier. The die is disposed in the recess. The die includes at least one pad. The adhesive layer is disposed between a bottom surface of the die and the carrier and between a sidewall of the die and the carrier. The 3D printing conductive wire is disposed on the lead frame, the adhesive layer, and the pad, and is electrically connected between the lead frame and the pad.

Abstract: An information handling system couples a solid state drive assembly having plural solid state drives to a motherboard with a single M.2 connector coupled to the motherboard by interfacing the plural solid state drives with an adapter circuit board having an M.2 interface defined at one end to insert into the motherboard connector and having plural M.2 connectors to interface with the plural solid state drives in a desired configuration, such as a stacked vertical configuration that more efficiently uses motherboard footprint to include persistent memory.

Abstract: The present disclosure provides a semiconductor package, including a first semiconductor structure, including an active region in a first substrate portion, wherein the active region includes at least one of a transistor, a diode, and a photodiode, a first bonding metallization over the first semiconductor structure, a first bonding dielectric over the first semiconductor structure, surrounding and directly contacting the first bonding metallization, a second semiconductor structure over a first portion of the first semiconductor structure, a second bonding metallization at a front surface of the second semiconductor structure, a second bonding dielectric surrounding and directly contacting the second bonding metallization, a conductive through via over a second portion of the first semiconductor structure different from the first portion, and a passive device directly over the conductive through via.

Abstract: Disclosed are package substrates and semiconductor packages including the same. A package substrate may have a plurality of corner regions; a core layer having a first surface and a second surface; an upper layer, which includes a plurality of first wiring structures and a plurality of first dielectric layers; and a lower layer, which includes a plurality of second wiring structures and a plurality of second dielectric layers. Additionally, an area proportion of top surfaces of the first wiring structures in the upper layer relative to a top surface of the upper layer on each of the corner regions is less than an area proportion of top surfaces of the second wiring structures in the lower layer relative to a top surface of the lower layer on each of the corner regions.

Abstract: An antenna-integrated wireless module comprises a substrate having a first surface and including a wireless region and an antenna region. A wireless functional section is in the wireless region and includes an RF circuit on the first surface or in the substrate. An antenna section is in the antenna region and includes an antenna conductor. A resin sealing layer covers at least a part of the first surface. A thickness of the resin sealing layer in a portion overlapping the antenna region may be thinner than a thickness of the resin sealing layer in a portion overlapping the wireless region such that the resin sealing layer may have a step at a location between the wireless region and the antenna region; or the substrate may have a step at a boundary between the wireless region and the antenna region, and the resin sealing layer may not the cover the step.

Abstract: Embodiments herein may present an integrated circuit or a computing system having an integrated circuit, where the integrated circuit includes a physical network layer, a physical computing layer, and a physical memory layer, each having a set of dies, and a die including multiple tiles. The physical network layer further includes one or more signal pathways dynamically configurable between multiple pre-defined interconnect topologies for the multiple tiles, where each topology of the multiple pre-defined interconnect topologies corresponds to a communication pattern related to a workload. At least a tile in the physical computing layer is further arranged to move data to another tile in the physical computing layer or a storage cell of the physical memory layer through the one or more signal pathways in the physical network layer. Other embodiments may be described and/or claimed.

Abstract: A semiconductor package includes first and second semiconductor dies, first and second redistributed line structures, a first bridge die, and a vertical connector. The first semiconductor die and the first bridge die are disposed on the first redistributed line structure. The first bridge die is disposed to provide a level difference between the first semiconductor die and the first bridge die, the first bridge die having a height that is less than a height of the first semiconductor die. The second redistributed line structure has a protrusion, laterally protruding from a side surface of the first semiconductor die when viewed from a plan view, and a bottom surface of the second redistributed line structure is in contact with a top surface of the first semiconductor die. The second semiconductor die is disposed on the second redistributed line structure. The vertical connector is disposed between the bridge die and the protrusion of the second redistributed line structure to support the protrusion.

Abstract: An electronic unit includes a USB host and a USB device. After the USB host and the USB device are connected to each other by a USB cable, a signal requesting for a connection permission is transmitted from the USB device to the USB host, and the USB host determines whether to permit a connection based on the signal. The electronic unit further includes a power supply configured to supply power to the USB device, and an additional GND pattern different from a GND pattern of the USB cable is electrically connected to a GND of the USB port of at least one of the USB host and the USB device. An area of the additional GND pattern is 2000 mm2 or more.

Abstract: Disclosed herein are electronic components having three-dimensional capacitors disposed in a metallization stack, as well as related methods and devices. In some embodiments, for example, an electronic component may include: a metallization stack and a capacitor disposed in the metallization stack wherein the capacitor includes a first conductive plate having a plurality of recesses, and a second conductive plate having a plurality of projections, wherein individual projections of the plurality of projections extend into corresponding individual recesses of the plurality of recesses without contacting the first conductive plate.

Abstract: A semiconductor package includes a circuit pattern extending in a horizontal direction. The circuit pattern is conductive. A first insulation layer is disposed on the circuit pattern. A semiconductor chip is disposed on the first insulation layer. The first insulation layer includes first protrusions which protrude from a bottom surface of the first insulation layer, penetrate through at least a portion of the circuit pattern, and have a mesh structure. A second protrusion protrudes from the bottom surface of the first insulation layer and penetrates at least a portion of the circuit pattern. The second protrusion is spaced apart from the semiconductor chip in the horizontal direction. The second protrusion has a width in the horizontal direction wider than that of each of the first protrusions.

Abstract: A semiconductor package and a method of manufacturing a semiconductor package are disclosed. The semiconductor package including a first substrate including a first cavity, a cavity mold configured to be inserted into the first cavity and including a second cavity, an electronic component inserted in the second cavity, and a second substrate formed on a surface of the first substrate, a surface of the cavity mold and a surface of the electronic component.

Abstract: Embodiments herein may present an integrated circuit or a computing system having an integrated circuit, where the integrated circuit includes a physical network layer, a physical computing layer, and a physical memory layer, each having a set of dies, and a die including multiple tiles. The physical network layer further includes one or more signal pathways dynamically configurable between multiple pre-defined interconnect topologies for the multiple tiles, where each topology of the multiple pre-defined interconnect topologies corresponds to a communication pattern related to a workload. At least a tile in the physical computing layer is further arranged to move data to another tile in the physical computing layer or a storage cell of the physical memory layer through the one or more signal pathways in the physical network layer. Other embodiments may be described and/or claimed.

Abstract: Aspects of this disclosure relate to a surface acoustic wave assembly that includes a first surface acoustic wave filter, a second surface acoustic wave filter, and a thermally conductive sheet configured to dissipate heat from the first surface acoustic wave filter in an area corresponding to the second surface acoustic wave filter. The thermally conductive sheet can be thinner than a piezoelectric layer of the first surface acoustic wave filter. Related radio frequency modules and methods are disclosed.

Abstract: An electronic component package includes: a metal plate; a metal wall that is disposed on the metal plate; a metal frame that is disposed on the metal plate so as to be opposed to the metal wall; a through hole that is formed in the metal wall; an opening hole that is formed in the metal frame so as to be opposed to the through hole; and a lead that is hermetically sealed with a sealing portion provided in the through hole, and that is inserted into the opening hole and the through hole. The metal frame includes: a side plate that is opposed to the metal wall; a bent portion that is connected to the side plate and has a round shape; and a welding portion that is connected to the bent portion and to which a lid member is to be bonded.

Abstract: A bridge leg circuit assembly comprising: a circuit board, a first active switch die, and a second active switch die. The circuit board having an insulating plate with a first and second side and a first and second conducting layer on the first and second sides of the insulating plate, respectively. The second conducting layer having a first and second conducting region that are insulated from each other. The first active switch die having an opposing first side, facing and coupled with the first conducting region, and an opposing second side, coupled with the second conducting region, which are embedded into the circuit board. The second active switch die having an opposing first side, coupled with the second conducting region, and an opposing second side, coupled with the first conducting layer, which are embedded into the circuit board.

Abstract: A manufacturing method of a semiconductor package includes locating, on a substrate, a semiconductor device having an external terminal provided on a top surface thereof, forming a resin insulating layer covering the semiconductor device, forming an opening, exposing the external terminal, in the resin insulating layer, performing plasma treatment on a bottom surface of the opening, performing chemical treatment on the bottom surface of the opening after the plasma treatment, and forming a conductive body to be connected with the external terminal exposed in the opening.

Abstract: An electronic component-embedded board includes: a core substrate; a cavity which penetrates the core substrate; a wiring layer formed on one face of the core substrate; a component mounting pattern formed of the same material as the wiring layer and laid across the cavity to partition the cavity into through holes in plan view; an electronic component mounted on the component mounting pattern and arranged inside the cavity; a first insulating layer formed on the one face of the core substrate to cover one face of the electronic component; and a second insulating layer formed on the other face of the core substrate to cover the other face of the electronic component. The cavity is filled with the first insulating layer and the second insulating layer.

Abstract: In a wafer level chip scale package, a wafer level interconnect structure is formed on a dummy substrate with temperatures in excess of 200° C. First semiconductor die are mounted on the wafer level interconnect structure. The wafer level interconnect structure provides a complete electrical interconnect between the semiconductor die and one or more of the solder bumps according to the function of the semiconductor device. A second semiconductor die can be mounted to the first semiconductor die. A first encapsulant is formed over the semiconductor die. A second encapsulant is formed over the first encapsulant. The dummy substrate is removed. A first UBM is formed in electrical contact with the first conductive layer. Solder bumps are made in electrical contact with the first UBM. A second UBM is formed to electrically connect the semiconductor die to the wafer level interconnect structure.

Abstract: A method for manufacturing a flexible printed circuit board includes providing a first double-sided circuit substrate which comprises an electronic component. A multilayer circuit substrate having a mounting groove is also provided. The multilayer circuit substrate covers the first double-sided circuit substrate through an adhesive layer, causing the electronic component to be received in the mounting groove, thereby forming an intermediate product. At least one through hole is defined in the intermediate product, which when filled with conductive material electrically connects the multilayer circuit substrate to the first double-sided circuit substrate to form the flexible printed circuit board.

Abstract: A base substrate which prevents burrs generated during the cutting process includes: multiple conductive layers stacked in one direction with respect to the base substrate; at least one insulation layer being alternately stacked with said conductive layers and electrically separating said conductive layers; and a through-hole penetrating said base substrate covering said insulation layer at the contact region where said cut surface and said insulation layer meet during the cutting of said base substrate in accordance with a predetermined region of the chip substrate. A method of manufacturing the base substrate includes alternately stacking conductive layers and insulation layers and forming a through-hole.

Abstract: An electronic part embedded substrate is disclosed. The electronic part embedded substrate includes a first substrate, a second substrate, an electronic part, an electrically connecting member, and a sealing member. A method of producing an electronic part embedded substrate is also disclosed. The method includes mounting an electronic part onto a first substrate, laminating a second substrate on the first substrate through an electrically connecting member; and filling a space between the first substrate and the second substrate with a sealing member to seal the electronic part.

Abstract: A chip package includes a first substrate having at least one circuit layer formed on a first surface thereof, a first die mounted on a second surface of the first substrate opposite from the first surface, and an interconnection assembly comprising upper and lower conductive layers provided on an insulating substrate, with the upper conductive layer of the interconnection assembly affixed to the second surface of the first substrate and electrically connected to the at least one circuit layer of the first substrate. A second substrate is positioned on a side of the first die opposite from the first substrate so as to position the die between the first and second substrates, the second substrate having at least one circuit layer formed on an outward facing first surface thereof that is electrically connected to at least one of the lower conductive layers of the interconnection assembly and the first die.